CN108711547A - A kind of silicon wafer stripping technique - Google Patents
A kind of silicon wafer stripping technique Download PDFInfo
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- CN108711547A CN108711547A CN201810413824.XA CN201810413824A CN108711547A CN 108711547 A CN108711547 A CN 108711547A CN 201810413824 A CN201810413824 A CN 201810413824A CN 108711547 A CN108711547 A CN 108711547A
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- silicon chip
- silicon
- degumming
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02052—Wet cleaning only
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67057—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing with the semiconductor substrates being dipped in baths or vessels
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
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- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
The invention discloses a kind of silicon wafer stripping techniques, include the following steps：Silicon chip is placed in processing pond, and deionized water is added into processing pond, then degumming liquid is added into processing pond again, silicon chip is set to stand 35-50min, then hydro-peening processing is carried out, it also needs to control the temperature of spray washing at 30-35 degrees Celsius, by treated, silicon chip is again placed in processing pond, and degumming liquid is added thereto, silicon chip is shaken under conditions of 50-60 degrees Celsius, after it reacts 3-6min, silicon chip is cleaned by ultrasonic, it is impregnated being placed in ultrasonic cleaner by the silicon chip of vibrations, silicon chip is placed in surface treatment pond again, and surface treatment liquid is added thereto, 30-50min is impregnated in 35-45 degrees Celsius of environment, and hydro-peening processing is carried out again.The present invention can comprehensively clear up the removing residual glue of silicon chip, to ensure that degumming quality, additionally it is possible to ensure that the surface of silicon chip is injury-free.
Description
Technical field
The present invention relates to silicon chip processing technology field more particularly to a kind of silicon wafer stripping techniques.
Background technology
With the continuous development of world economy, modernization construction constantly increases high efficient energy sources demand.Photovoltaic generation conduct
One of the main energy sources of green energy resource and human kind sustainable development are increasingly subject to the attention of countries in the world and are sent out energetically
Exhibition.The basic material of monocrystalline silicon piece, polysilicon chip as the solar battery sheet of photovoltaic generation, possesses the extensive market demand.
Wafer Cleaning process is to produce last procedure of silicon chip, and two kinds of cleanings are mainly used in this procedure and are set
Standby, one is solar silicon wafers degumming machine, the silicon chip after multi-wire saw is mainly carried out prerinse and degumming by effect
Processing；Another kind is solar silicon wafers cleaning machine, effect mainly silicon chip separated after degumming using after heating go from
Sub- water and medicament carry out ultrasonic cleaning and drying and processing.Silicon chip in degumming machine, need to silicon chip carry out multiple spray and
Rinsing, water used is mostly tap water or middle water, and be there are certain requirements to water temperature, if water temperature is too low, is easy to out after shower
Existing silicon chip viscose glue side chipping problem, causes heavy losses.For this purpose, we have proposed a kind of silicon wafer stripping techniques.
Invention content
The present invention proposes a kind of silicon wafer stripping technique, to solve the problems mentioned in the above background technology.
The present invention proposes a kind of silicon wafer stripping technique, includes the following steps：
S1：The silicon chip that cutting finishes is immediately placed in the treatment trough for filling distilled water and right under conditions of 30-40 degrees Celsius
Silicon face is cleaned, and cleaning 3-6 times need to be carried out to silicon chip, so as to remove the impurity of silicon chip surface；
S2：By treated in S1 silicon chip extracting, and its surface is dried, is then again placed in processing pond, and
Deionized water is added into processing pond, deionized water need to cover silicon chip, then add degumming liquid into processing pond again, complete
Afterwards, deionized water is mixed under conditions of 45-55 degrees Celsius, waits for deionized water and degumming liquid after mixing,
Silicon chip is set to stand 35-50min；
S3：It completes after standing, silicon chip is placed under spraying mechanism, carry out hydro-peening processing, and hydraulic pressure 0.6-0.7MPa, it is described
The hydro-peening time is 350-380s, also needs to control the temperature of spray washing at 30-35 degrees Celsius, with remove the mortar in silicon chip gap with
And most of removing residual glue；
S4：By treated in S3, silicon chip is again placed in processing pond, and adds degumming liquid thereto, and degumming liquid need to cover silicon
Piece shakes silicon chip under conditions of 50-60 degrees Celsius so that degumming liquid comes into full contact with silicon chip surface, waits for its reaction
After 3-6min, silicon chip is cleaned by ultrasonic, is impregnated being placed in ultrasonic cleaner by the silicon chip of vibrations, and is clear
It is 10-15min to wash the time, after the completion, the removing residual glue of silicon chip surface is removed using cleaning wiping cloth；
S5：After the completion of above-mentioned processing, silicon chip is placed in surface treatment pond again, and add surface treatment liquid thereto, in 35-
30-50min is impregnated in 45 degrees Celsius of environment, and carries out hydro-peening processing again, and hydraulic pressure 0.1-0.4MPa, then by silicon chip
It is placed in gnotobasis and is air-dried, that is, complete the degumming process to silicon chip surface.
Preferably, the surface treatment liquid in S1 is ethyl alcohol, citric acid, nitric acid, isopropanol, pH adjusting agent and dispersant
Mixed material, and ethyl alcohol, citric acid, nitric acid, isopropanol, pH adjusting agent and dispersant weight ratio be 2：1：0.1：0.5：
0.05：0.01.
Preferably, the deionized water in S2 and the molal weight of degumming liquid ratio are 10：1.
The present invention also provides a kind of degumming liquid, the formula of raw material by weight is as follows：10-20 parts of organic acid, oxalic acid 5-8
Part, 0.1-0.2 parts of corrosion inhibiter, disappears at 5-8 parts of halogenated alkane, 2-5 parts of acetone, 2-5 parts of ethylene glycol, 0.3-0.6 parts of surfactant
0.1-0.2 parts of infusion.
The present invention also provides a kind of preparation processes of degumming liquid, are as follows：
Blender is chosen, and organic acid, oxalic acid, halogenated alkane, acetone and ethylene glycol are placed in blender, is taken the photograph in 35-50
Be mixed under conditions of family name's degree, after stirring 15-18min, again thereto add surfactant, corrosion inhibiter and
Antifoaming agent carries out mixing 5-8min, takes out after the completion, restore to room temperature after its temperature again after standing 10-16min,
Obtain degumming liquid.
A kind of silicon wafer stripping technique proposed by the present invention, advantageous effect are：The silicon wafer stripping technique by silicon chip into
Row pretreatment, can remove its surface impurity, then be handled twice silicon chip surface using degumming liquid, and its concentration is not
Together, it is comprehensively cleared up so as to the removing residual glue to silicon chip, to ensure that degumming quality, additionally it is possible to ensure the table of silicon chip
Face is injury-free, suitable for large-scale promotion.
Specific implementation mode
With reference to specific embodiment, the present invention will be further described.
Embodiment 1
The present invention proposes a kind of silicon wafer stripping technique, includes the following steps：
S1：The silicon chip that cutting finishes is immediately placed in the treatment trough for filling distilled water and under conditions of 30 degrees Celsius to silicon table
Face is cleaned, and cleaning 3-6 times need to be carried out to silicon chip, so as to remove the impurity of silicon chip surface；
S2：By treated in S1 silicon chip extracting, and its surface is dried, is then again placed in processing pond, and
Deionized water is added into processing pond, deionized water need to cover silicon chip, then add degumming liquid into processing pond again, complete
Afterwards, deionized water is mixed under conditions of 45 degrees Celsius, waits for that deionized water after mixing, makes silicon with degumming liquid
Piece stands 35min；
S3：It completes after standing, silicon chip is placed under spraying mechanism, carry out hydro-peening processing, and hydraulic pressure 0.6-0.7MPa, it is described
The hydro-peening time is 350, also needs to control the temperature of spray washing at 30-35 degrees Celsius, to remove the mortar in silicon chip gap and big
Part removing residual glue；
S4：By treated in S3, silicon chip is again placed in processing pond, and adds degumming liquid thereto, and degumming liquid need to cover silicon
Piece shakes silicon chip under conditions of 50 degrees Celsius so that degumming liquid comes into full contact with silicon chip surface, waits for that it reacts 3min
Afterwards, silicon chip is cleaned by ultrasonic, is impregnated being placed in ultrasonic cleaner by the silicon chip of vibrations, and scavenging period
The removing residual glue of silicon chip surface is removed using cleaning wiping cloth after the completion for 10min；
S5：After the completion of above-mentioned processing, silicon chip is placed in surface treatment pond again, and add surface treatment liquid thereto, 35
Degree Celsius environment in impregnate 30min, and carry out hydro-peening processing again, and hydraulic pressure 0.1-0.4MPa, silicon chip be then placed in nothing
Collarium is air-dried in border, that is, completes the degumming process to silicon chip surface.
Surface treatment liquid in S1 is the mixing of ethyl alcohol, citric acid, nitric acid, isopropanol, pH adjusting agent and dispersant
Material, and ethyl alcohol, citric acid, nitric acid, isopropanol, pH adjusting agent and dispersant weight ratio be 2：1：0.1：0.5：0.05：
0.01。
The molal weight ratio of deionized water and degumming liquid in S2 is 10：1.
The present invention also provides a kind of degumming liquid, the formula of raw material by weight is as follows：10 parts of organic acid, 5 parts of oxalic acid, halogen
For 5 parts of alkane, 2 parts of acetone, 2 parts of ethylene glycol, 0.3 part of surfactant, 0.1 part of corrosion inhibiter, 0.1 part of antifoaming agent.
The present invention also provides a kind of preparation processes of degumming liquid, are as follows：
Blender is chosen, and organic acid, oxalic acid, halogenated alkane, acetone and ethylene glycol are placed in blender, at 35 degrees Celsius
Under conditions of be mixed, after stirring 15min, add surfactant, corrosion inhibiter and antifoaming agent thereto again,
After standing 10min, mixing 5min is carried out again, is taken out after the completion, to get to degumming after its temperature is restored to room temperature
Liquid.
Embodiment 2
The present invention proposes a kind of silicon wafer stripping technique, includes the following steps：
S1：The silicon chip that cutting finishes is immediately placed in the treatment trough for filling distilled water and under conditions of 33 degrees Celsius to silicon table
Face is cleaned, and cleaning 3-6 times need to be carried out to silicon chip, so as to remove the impurity of silicon chip surface；
S2：By treated in S1 silicon chip extracting, and its surface is dried, is then again placed in processing pond, and
Deionized water is added into processing pond, deionized water need to cover silicon chip, then add degumming liquid into processing pond again, complete
Afterwards, deionized water is mixed under conditions of 48 degrees Celsius, waits for that deionized water after mixing, makes silicon with degumming liquid
Piece stands 40min；
S3：It completes after standing, silicon chip is placed under spraying mechanism, carry out hydro-peening processing, and hydraulic pressure 0.6-0.7MPa, it is described
The hydro-peening time is 360s, also needs to control the temperature of spray washing at 32 degrees Celsius, with the mortar for removing silicon chip gap and big portion
Divide removing residual glue；
S4：By treated in S3, silicon chip is again placed in processing pond, and adds degumming liquid thereto, and degumming liquid need to cover silicon
Piece shakes silicon chip under conditions of 53 degrees Celsius so that degumming liquid comes into full contact with silicon chip surface, waits for that it reacts 4min
Afterwards, silicon chip is cleaned by ultrasonic, is impregnated being placed in ultrasonic cleaner by the silicon chip of vibrations, and scavenging period
The removing residual glue of silicon chip surface is removed using cleaning wiping cloth after the completion for 12min；
S5：After the completion of above-mentioned processing, silicon chip is placed in surface treatment pond again, and add surface treatment liquid thereto, in 35-
35min is impregnated in 45 degrees Celsius of environment, and carries out hydro-peening processing again, and hydraulic pressure 0.1-0.4MPa, is then placed in silicon chip
It is air-dried in gnotobasis, that is, completes the degumming process to silicon chip surface.
Surface treatment liquid in S1 is the mixing of ethyl alcohol, citric acid, nitric acid, isopropanol, pH adjusting agent and dispersant
Material, and ethyl alcohol, citric acid, nitric acid, isopropanol, pH adjusting agent and dispersant weight ratio be 2：1：0.1：0.5：0.05：
0.01。
The molal weight ratio of deionized water and degumming liquid in S2 is 10：1.
The present invention also provides a kind of degumming liquid, the formula of raw material by weight is as follows：13 parts of organic acid, 6 parts of oxalic acid, halogen
For 6 parts of alkane, 3 parts of acetone, 3 parts of ethylene glycol, 0.4 part of surfactant, 0.13 part of corrosion inhibiter, 0.13 part of antifoaming agent.
The present invention also provides a kind of preparation processes of degumming liquid, are as follows：
Blender is chosen, and organic acid, oxalic acid, halogenated alkane, acetone and ethylene glycol are placed in blender, at 40 degrees Celsius
Under conditions of be mixed, after stirring 16min, add surfactant, corrosion inhibiter and antifoaming agent thereto again,
After standing 12min, mixing 6min is carried out again, is taken out after the completion, to get to degumming after its temperature is restored to room temperature
Liquid.
Embodiment 3
The present invention proposes a kind of silicon wafer stripping technique, includes the following steps：
S1：The silicon chip that cutting finishes is immediately placed in the treatment trough for filling distilled water and under conditions of 37 degrees Celsius to silicon table
Face is cleaned, and cleaning 3-6 times need to be carried out to silicon chip, so as to remove the impurity of silicon chip surface；
S2：By treated in S1 silicon chip extracting, and its surface is dried, is then again placed in processing pond, and
Deionized water is added into processing pond, deionized water need to cover silicon chip, then add degumming liquid into processing pond again, complete
Afterwards, deionized water is mixed under conditions of 52 degrees Celsius, waits for that deionized water after mixing, makes silicon with degumming liquid
Piece stands 45min；
S3：It completes after standing, silicon chip is placed under spraying mechanism, carry out hydro-peening processing, and hydraulic pressure 0.6-0.7MPa, it is described
The hydro-peening time is 370s, also needs to control the temperature of spray washing at 34 degrees Celsius, with the mortar for removing silicon chip gap and big portion
Divide removing residual glue；
S4：By treated in S3, silicon chip is again placed in processing pond, and adds degumming liquid thereto, and degumming liquid need to cover silicon
Piece shakes silicon chip under conditions of 57 degrees Celsius so that degumming liquid comes into full contact with silicon chip surface, waits for that it reacts 5min
Afterwards, silicon chip is cleaned by ultrasonic, is impregnated being placed in ultrasonic cleaner by the silicon chip of vibrations, and scavenging period
The removing residual glue of silicon chip surface is removed using cleaning wiping cloth after the completion for 14min；
S5：After the completion of above-mentioned processing, silicon chip is placed in surface treatment pond again, and add surface treatment liquid thereto, 41
Degree Celsius environment in impregnate 42min, and carry out hydro-peening processing again, and hydraulic pressure 0.1-0.4MPa, silicon chip be then placed in nothing
Collarium is air-dried in border, that is, completes the degumming process to silicon chip surface.
Surface treatment liquid in S1 is the mixing of ethyl alcohol, citric acid, nitric acid, isopropanol, pH adjusting agent and dispersant
Material, and ethyl alcohol, citric acid, nitric acid, isopropanol, pH adjusting agent and dispersant weight ratio be 2：1：0.1：0.5：0.05：
0.01。
The molal weight ratio of deionized water and degumming liquid in S2 is 10：1.
The present invention also provides a kind of degumming liquid, the formula of raw material by weight is as follows：17 parts of organic acid, 7 parts of oxalic acid, halogen
For 7 parts of alkane, 4 parts of acetone, 4 parts of ethylene glycol, 0.5 part of surfactant, 0.17 part of corrosion inhibiter, 0.17 part of antifoaming agent.
The present invention also provides a kind of preparation processes of degumming liquid, are as follows：
Blender is chosen, and organic acid, oxalic acid, halogenated alkane, acetone and ethylene glycol are placed in blender, at 45 degrees Celsius
Under conditions of be mixed, after stirring 17min, add surfactant, corrosion inhibiter and antifoaming agent thereto again,
After standing 14min, mixing 7min is carried out again, is taken out after the completion, to get to degumming after its temperature is restored to room temperature
Liquid.
Embodiment 4
The present invention proposes a kind of silicon wafer stripping technique, includes the following steps：
S1：The silicon chip that cutting finishes is immediately placed in the treatment trough for filling distilled water and under conditions of 40 degrees Celsius to silicon table
Face is cleaned, and cleaning 3-6 times need to be carried out to silicon chip, so as to remove the impurity of silicon chip surface；
S2：By treated in S1 silicon chip extracting, and its surface is dried, is then again placed in processing pond, and
Deionized water is added into processing pond, deionized water need to cover silicon chip, then add degumming liquid into processing pond again, complete
Afterwards, deionized water is mixed under conditions of 55 degrees Celsius, waits for that deionized water after mixing, makes silicon with degumming liquid
Piece stands 50min；
S3：It completes after standing, silicon chip is placed under spraying mechanism, carry out hydro-peening processing, and hydraulic pressure 0.6-0.7MPa, it is described
The hydro-peening time is 380s, also needs to control the temperature of spray washing at 35 degrees Celsius, with the mortar for removing silicon chip gap and big portion
Divide removing residual glue；
S4：By treated in S3, silicon chip is again placed in processing pond, and adds degumming liquid thereto, and degumming liquid need to cover silicon
Piece shakes silicon chip under conditions of 60 degrees Celsius so that degumming liquid comes into full contact with silicon chip surface, waits for that it reacts 6min
Afterwards, silicon chip is cleaned by ultrasonic, is impregnated being placed in ultrasonic cleaner by the silicon chip of vibrations, and scavenging period
The removing residual glue of silicon chip surface is removed using cleaning wiping cloth after the completion for 15min；
S5：After the completion of above-mentioned processing, silicon chip is placed in surface treatment pond again, and add surface treatment liquid thereto, in 35-
50min is impregnated in 45 degrees Celsius of environment, and carries out hydro-peening processing again, and hydraulic pressure 0.1-0.4MPa, is then placed in silicon chip
It is air-dried in gnotobasis, that is, completes the degumming process to silicon chip surface.
Surface treatment liquid in S1 is the mixing of ethyl alcohol, citric acid, nitric acid, isopropanol, pH adjusting agent and dispersant
Material, and ethyl alcohol, citric acid, nitric acid, isopropanol, pH adjusting agent and dispersant weight ratio be 2：1：0.1：0.5：0.05：
0.01。
The molal weight ratio of deionized water and degumming liquid in S2 is 10：1.
The present invention also provides a kind of degumming liquid, the formula of raw material by weight is as follows：20 parts of organic acid, 8 parts of oxalic acid, halogen
For 8 parts of alkane, 5 parts of acetone, 5 parts of ethylene glycol, 0.6 part of surfactant, 0.2 part of corrosion inhibiter, 0.2 part of antifoaming agent.
The present invention also provides a kind of preparation processes of degumming liquid, are as follows：
Blender is chosen, and organic acid, oxalic acid, halogenated alkane, acetone and ethylene glycol are placed in blender, at 50 degrees Celsius
Under conditions of be mixed, after stirring 18min, add surfactant, corrosion inhibiter and antifoaming agent thereto again,
After standing 16min, mixing 8min is carried out again, is taken out after the completion, to get to degumming after its temperature is restored to room temperature
Liquid.
The foregoing is only a preferred embodiment of the present invention, but scope of protection of the present invention is not limited thereto,
Any one skilled in the art in the technical scope disclosed by the present invention, according to the technique and scheme of the present invention and its
Inventive concept is subject to equivalent substitution or change, should be covered by the protection scope of the present invention.
Claims (5)
1. a kind of silicon wafer stripping technique, which is characterized in that include the following steps：
S1：The silicon chip that cutting finishes is immediately placed in the treatment trough for filling distilled water and right under conditions of 30-40 degrees Celsius
Silicon face is cleaned, and cleaning 3-6 times need to be carried out to silicon chip, so as to remove the impurity of silicon chip surface；
S2：By treated in S1 silicon chip extracting, and its surface is dried, is then again placed in processing pond, and
Deionized water is added into processing pond, deionized water need to cover silicon chip, then add degumming liquid into processing pond again, complete
Afterwards, deionized water is mixed under conditions of 45-55 degrees Celsius, waits for deionized water and degumming liquid after mixing,
Silicon chip is set to stand 35-50min；
S3：It completes after standing, silicon chip is placed under spraying mechanism, carry out hydro-peening processing, and hydraulic pressure 0.6-0.7MPa, it is described
The hydro-peening time is 350-380s, also needs to control the temperature of spray washing at 30-35 degrees Celsius, with remove the mortar in silicon chip gap with
And most of removing residual glue；
S4：By treated in S3, silicon chip is again placed in processing pond, and adds degumming liquid thereto, and degumming liquid need to cover silicon
Piece shakes silicon chip under conditions of 50-60 degrees Celsius so that degumming liquid comes into full contact with silicon chip surface, waits for its reaction
After 3-6min, silicon chip is cleaned by ultrasonic, is impregnated being placed in ultrasonic cleaner by the silicon chip of vibrations, and is clear
It is 10-15min to wash the time, after the completion, the removing residual glue of silicon chip surface is removed using cleaning wiping cloth；
S5：After the completion of above-mentioned processing, silicon chip is placed in surface treatment pond again, and add surface treatment liquid thereto, in 35-
30-50min is impregnated in 45 degrees Celsius of environment, and carries out hydro-peening processing again, and hydraulic pressure 0.1-0.4MPa, then by silicon chip
It is placed in gnotobasis and is air-dried, that is, complete the degumming process to silicon chip surface.
2. a kind of silicon wafer stripping technique according to claim 1, it is characterised in that：Surface treatment liquid in S1 is second
The mixed material of alcohol, citric acid, nitric acid, isopropanol, pH adjusting agent and dispersant, and ethyl alcohol, citric acid, nitric acid, isopropanol,
PH adjusting agent and the weight ratio of dispersant are 2：1：0.1：0.5：0.05：0.01.
3. a kind of silicon wafer stripping technique according to claim 1, it is characterised in that：Deionized water in S2 and degumming liquid
Molal weight ratio be 10：1.
4. a kind of degumming liquid according to claim 3, which is characterized in that the formula of its raw material by weight is as follows：Organic acid
10-20 parts, it is 5-8 parts of oxalic acid, 5-8 parts of halogenated alkane, 2-5 parts of acetone, 2-5 parts of ethylene glycol, 0.3-0.6 parts of surfactant, slow
Lose 0.1-0.2 parts of agent, 0.1-0.2 parts of antifoaming agent.
5. a kind of preparation process of degumming liquid according to claim 4, which is characterized in that be as follows：
Blender is chosen, and organic acid, oxalic acid, halogenated alkane, acetone and ethylene glycol are placed in blender, is taken the photograph in 35-50
Be mixed under conditions of family name's degree, after stirring 15-18min, again thereto add surfactant, corrosion inhibiter and
Antifoaming agent carries out mixing 5-8min, takes out after the completion, restore to room temperature after its temperature again after standing 10-16min,
Obtain degumming liquid.
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| CN111014161A (en) * | 2019-12-09 | 2020-04-17 | 东莞市日和自动化设备有限公司 | Tray degumming and arranging process |
| CN112126534A (en) * | 2020-09-01 | 2020-12-25 | 武汉宜田科技发展有限公司 | Neutral degumming agent for diamond wire cutting single/polycrystalline silicon rod |
| CN112188657A (en) * | 2020-09-23 | 2021-01-05 | 江西复萍科技有限公司 | Elastic heating cloth and preparation method thereof |
| CN112191570A (en) * | 2020-10-14 | 2021-01-08 | 苏州欧梦达电子有限公司 | Degumming and paint removing process for fingerprint module |
| CN112745991A (en) * | 2019-10-31 | 2021-05-04 | 洛阳阿特斯光伏科技有限公司 | Degumming agent and preparation method and application thereof |
| CN112934829A (en) * | 2019-11-26 | 2021-06-11 | 东莞新科技术研究开发有限公司 | Cleaning method of semiconductor clamp |
| CN114887990A (en) * | 2022-05-13 | 2022-08-12 | 安徽光智科技有限公司 | Ultrasonic cleaning process for cemented lens |
| CN115216370A (en) * | 2022-07-07 | 2022-10-21 | 呼和浩特市欧通能源科技有限公司 | Degumming liquid for removing adhesive in silicon crystal clamping piece and using method thereof |
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