CN102560498A - Phosphorus silicon cleaning solution for crystalline silicon solar cell and cleaning method - Google Patents
Phosphorus silicon cleaning solution for crystalline silicon solar cell and cleaning method Download PDFInfo
- Publication number
- CN102560498A CN102560498A CN2012100024539A CN201210002453A CN102560498A CN 102560498 A CN102560498 A CN 102560498A CN 2012100024539 A CN2012100024539 A CN 2012100024539A CN 201210002453 A CN201210002453 A CN 201210002453A CN 102560498 A CN102560498 A CN 102560498A
- Authority
- CN
- China
- Prior art keywords
- silicon
- active agent
- tensio
- solar cell
- fraction
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Photovoltaic Devices (AREA)
Abstract
The invention discloses phosphorus silicon cleaning solution for a crystalline silicon solar cell and a cleaning method. The phosphorus silicon cleaning solution comprises hydrofluoric acid and a surface active agent, wherein the volume fraction of the hydrofluoric acid ranges from 6% to 10%, the volume fraction of the surface active agent ranges from 0.016% to 0.04%, and the volume fraction of pure water ranges from 89.96%-93.984%. The temperature of the cleaning liquid is controlled to range from 20 DEG C to 30 DEG C, and then the reaction time of a silicon wafer in the cleaning liquid ranges from 200s to 400s. With adoption of the cleaning method, phosphorus silicon glass generated by diffusion can be better cleaned, and the problems of basket teeth marks of trench type phosphorus silicon removing equipment after PECVD (Plasma Enhanced Chemical Vapor Deposition) coating, as well as other problems such as wetting due to slow lifting, are solved thoroughly by a chemical method.
Description
Technical field
The present invention relates to a kind of crystal-silicon solar cell dephosphorization silicon scavenging solution and purging method, be used to remove the phosphorosilicate glass that diffusion back silicon chip surface produces, and the removal of gaily decorated basket seal, white line bar, washmarking seal, sun power crystal silicon battery sheet manufacturing field belonged to.
Background technology
In the solar battery sheet production process; It is one of approach that improves crystal-silicon solar cell efficient that silicon chip is formed after diffusion that phosphorosilicate glass layer that one deck contains phosphorus and silicon-dioxide thoroughly cleans up; But very big unstable is arranged in the cleaning process of existing hydrofluoric acid system to phosphorosilicate glass; Adopt lift processing slowly slot type dephosphorization silicon equipment in the silicon chip cleaning process because small basket of flowers sawtooth place is difficult to draw dried, cause the silicon chip surface attached water that contact with gaily decorated basket sawtooth place, oxidized once more when drying; Formation gaily decorated basket seal presents the tangible gaily decorated basket spination marking behind the plated film.Thereby lifting slowly simultaneously to draw not do also to cause silicon chip surface to hang the generation that water produces white line bar, washmarking seal.These factors can have a strong impact on battery sheet finished product outward appearance.
Summary of the invention
The object of the present invention is to provide a kind of crystal-silicon solar cell dephosphorization silicon scavenging solution and purging method.The present invention solves gaily decorated basket tooth seal that slot type dephosphorization silicon equipment produces and owing to lifts slowly and draw the not dried other problems that causes behind PECVD plasma reinforced chemical vapour deposition plated film.
The present invention relates to a kind of crystal-silicon solar cell dephosphorization silicon scavenging solution, form, the silicon chip surface phosphorosilicate glass is removed fully the generation that can avoid bad of gaily decorated basket seal, white line bar, washmarking seal etc. clean the time by hydrofluoric acid and tensio-active agent.
Technical scheme of the present invention is a kind of crystal-silicon solar cell dephosphorization silicon purging method; Contain following steps:
(1) preparation crystal-silicon solar cell dephosphorization silicon scavenging solution is made up of hydrofluoric acid and tensio-active agent; Wherein the volume(tric)fraction of hydrofluoric acid is 6%-10%, and the volume(tric)fraction of tensio-active agent is 0.016%-0.04%, and the volume(tric)fraction of pure water is 89.96%--93.984%; Described rinse liquid temperature is controlled between 20-30 ℃, and the reaction times of then silicon chip being put into scavenging solution is 200-400s;
(2) Rinsing Area is washed scavenging solution residual on the silicon chip off, and the process time is 20-50s;
(3) lift dehydration slowly;
(4) putting into baking oven dries silicon chip.
A kind of crystal-silicon solar cell dephosphorization silicon scavenging solution is made up of hydrofluoric acid and tensio-active agent; Wherein the volume(tric)fraction of hydrofluoric acid is 6%-10%, and the volume(tric)fraction of tensio-active agent is 0.016%-0.04%; The volume(tric)fraction of pure water is 89.96%--93.984%.
Described tensio-active agent is one or more of alkylphenol type tensio-active agent or E0POEO type segmented copolymer; Like dodecyl phenol polyethenoxy ether, polyoxyethylene nonylphenol etc.
After adopting aforesaid method, the present invention compared with prior art has remarkable advantage: because having added tensio-active agent has reduced the surface tension of solution at silicon chip surface, make phosphorosilicate glass clean more thoroughly.Owing to the adding of tensio-active agent, can thoroughly remove the phosphorosilicate glass of silicon chip surface, can solve slot type dephosphorization silicon equipment simultaneously owing to lift problems such as drawing the not dried gaily decorated basket seal that causes, white line bar, washmarking seal slowly.
As improvement, the temperature of said dephosphorization silicon scavenging solution is controlled between 20-30 ℃, in this TR, uses cleaning performance of the present invention better.
As further improvement, the scavenging period of described silicon chip dephosphorization silicon scavenging solution is 200-400s, in this district, uses cleaning performance of the present invention better time.
Advantage of the present invention: a kind of stable dephosphorization silex glass scavenging solution is provided, and solves gaily decorated basket tooth seal that slot type dephosphorization silicon equipment produces and behind the PECVD plated film owing to lift slowly and draw the not dried other problems that causes, like white line bar, washmarking seal etc.Avoid bad order, the generation of the sheet of doing over again, enhance productivity.
Description of drawings
When combining accompanying drawing to consider; Through with reference to following detailed, can more completely understand the present invention better and learn wherein many attendant advantages easily, but accompanying drawing described herein is used to provide further understanding of the present invention; Constitute a part of the present invention; Illustrative examples of the present invention and explanation thereof are used to explain the present invention, do not constitute to improper qualification of the present invention, wherein:
Fig. 1 is that expression is as dephosphorization silicon technology schema of the present invention.
Embodiment
With reference to Fig. 1 embodiments of the invention are described.
Obviously, many modifications and the variation made based on aim of the present invention of those skilled in the art belongs to protection scope of the present invention.
The present invention provides a kind of stable dephosphorization silex glass scavenging solution, is made up of hydrofluoric acid and tensio-active agent; Wherein the volume(tric)fraction of hydrofluoric acid is 6%-10%, and the volume(tric)fraction of tensio-active agent is 0.016%-0.04%; The volume(tric)fraction of pure water is 89.96%--93.984%.Described rinse liquid temperature is controlled between 20-30 ℃, and the reaction times of silicon chip in scavenging solution is 200-400s.
Below in conjunction with specific examples the present invention is further specified, but the present invention is not limited to embodiment.As shown in Figure 1; A kind of crystal-silicon solar cell dephosphorization silicon purging method.
Embodiment 1,
(1) preparation crystal-silicon solar cell dephosphorization silicon scavenging solution is made up of hydrofluoric acid and tensio-active agent; Wherein the volume(tric)fraction of hydrofluoric acid is 10%, and the volume(tric)fraction of tensio-active agent is 0.016%; The volume(tric)fraction of pure water is 89.96%.Described rinse liquid temperature is controlled between 20 ℃, and the reaction times of then silicon chip being put into scavenging solution is 400s;
(2) Rinsing Area is washed scavenging solution residual on the silicon chip off, and the process time is 50s;
(3) lift dehydration slowly;
(4) putting into baking oven dries silicon chip.
Embodiment 2,
(1) preparation crystal-silicon solar cell dephosphorization silicon scavenging solution is made up of hydrofluoric acid and tensio-active agent; Wherein the volume(tric)fraction of hydrofluoric acid is 9%, and the volume(tric)fraction of tensio-active agent is 0.04%, and the volume(tric)fraction of pure water is 93.984%.Described rinse liquid temperature is controlled between 30 ℃, and the reaction times of then silicon chip being put into scavenging solution is 200s;
(2) Rinsing Area is washed scavenging solution residual on the silicon chip off, and the process time is 20s;
(3) lift dehydration slowly;
(4) putting into baking oven dries silicon chip.
Embodiment 3,
(1) preparation crystal-silicon solar cell dephosphorization silicon scavenging solution is made up of hydrofluoric acid and tensio-active agent; Wherein the volume(tric)fraction of hydrofluoric acid is 6%, and the volume(tric)fraction of tensio-active agent is 0.08%, and the volume(tric)fraction of pure water is 91.9%.Described rinse liquid temperature is controlled between 25 ℃, and the reaction times of then silicon chip being put into scavenging solution is 300s;
(2) Rinsing Area is washed scavenging solution residual on the silicon chip off, and the process time is 40s;
(3) lift dehydration slowly;
(4) putting into baking oven dries silicon chip.
As stated, embodiments of the invention have been carried out explanation at length, but as long as not breaking away from inventive point of the present invention and effect in fact can have a lot of distortion, this will be readily apparent to persons skilled in the art.Therefore, such variation also all is included within protection scope of the present invention.
Claims (4)
1. crystal-silicon solar cell dephosphorization silicon purging method is characterized in that containing following steps:
(1) preparation crystal-silicon solar cell dephosphorization silicon scavenging solution is made up of hydrofluoric acid and tensio-active agent; Wherein the volume(tric)fraction of hydrofluoric acid is 6%-10%, and the volume(tric)fraction of tensio-active agent is 0.016%-0.04%, and the volume(tric)fraction of pure water is 89.96%--93.984%; Described rinse liquid temperature is controlled between 20-30 ℃, and the reaction times of then silicon chip being put into scavenging solution is 200-400s;
(2) Rinsing Area is washed scavenging solution residual on the silicon chip off, and the process time is 20-50s;
(3) lift dehydration slowly;
(4) putting into baking oven dries silicon chip.
2. a kind of crystal-silicon solar cell dephosphorization silicon purging method according to claim 1 is characterized in that tensio-active agent is one or more of alkylphenol type tensio-active agent or E0POEO type segmented copolymer.
3. a crystal-silicon solar cell dephosphorization silicon scavenging solution is characterized in that: be made up of hydrofluoric acid and tensio-active agent; Wherein the volume(tric)fraction of hydrofluoric acid is 6%-10%, and the volume(tric)fraction of tensio-active agent is 0.016%-0.04%, and the volume(tric)fraction of pure water is 89.96%--93.984%.
4. according to right 3 described crystal-silicon solar cell dephosphorization silicon scavenging solutions, it is characterized in that: described tensio-active agent is one or more of alkylphenol type tensio-active agent or E0POEO type segmented copolymer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012100024539A CN102560498A (en) | 2012-01-05 | 2012-01-05 | Phosphorus silicon cleaning solution for crystalline silicon solar cell and cleaning method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012100024539A CN102560498A (en) | 2012-01-05 | 2012-01-05 | Phosphorus silicon cleaning solution for crystalline silicon solar cell and cleaning method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN102560498A true CN102560498A (en) | 2012-07-11 |
Family
ID=46407052
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2012100024539A Pending CN102560498A (en) | 2012-01-05 | 2012-01-05 | Phosphorus silicon cleaning solution for crystalline silicon solar cell and cleaning method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102560498A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103700733A (en) * | 2014-01-16 | 2014-04-02 | 常州天合光能有限公司 | Cleaning treatment method of N-type crystalline silicon substrate of solar cell |
| CN112157655A (en) * | 2020-09-21 | 2021-01-01 | 常州科讯精密机械有限公司 | Flower basket free path implementation method, software system, device, server and system |
| CN113736571A (en) * | 2021-08-30 | 2021-12-03 | 横店集团东磁股份有限公司 | Pickling solution for graphite boat, preparation method of pickling solution and graphite boat cleaning method using pickling solution |
| CN114276814A (en) * | 2021-12-15 | 2022-04-05 | 湖北兴福电子材料有限公司 | Cleaning fluid for silicon wafer etching |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101667602A (en) * | 2009-09-23 | 2010-03-10 | 中轻太阳能电池有限责任公司 | Polysilicon solar cell and preparation method thereof |
| CN101777606A (en) * | 2010-03-15 | 2010-07-14 | 山东力诺太阳能电力股份有限公司 | Crystalline silicon solar battery selective diffusion process |
| CN102157602A (en) * | 2010-02-11 | 2011-08-17 | 上海思恩电子技术有限公司 | Method for carrying out wet-method phosphorous diffusion and texturing on substrate and acid solution for texturing |
-
2012
- 2012-01-05 CN CN2012100024539A patent/CN102560498A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101667602A (en) * | 2009-09-23 | 2010-03-10 | 中轻太阳能电池有限责任公司 | Polysilicon solar cell and preparation method thereof |
| CN102157602A (en) * | 2010-02-11 | 2011-08-17 | 上海思恩电子技术有限公司 | Method for carrying out wet-method phosphorous diffusion and texturing on substrate and acid solution for texturing |
| CN101777606A (en) * | 2010-03-15 | 2010-07-14 | 山东力诺太阳能电力股份有限公司 | Crystalline silicon solar battery selective diffusion process |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103700733A (en) * | 2014-01-16 | 2014-04-02 | 常州天合光能有限公司 | Cleaning treatment method of N-type crystalline silicon substrate of solar cell |
| CN103700733B (en) * | 2014-01-16 | 2015-10-21 | 常州天合光能有限公司 | The clean method of the N-type crystalline silicon substrate of solar cell |
| CN112157655A (en) * | 2020-09-21 | 2021-01-01 | 常州科讯精密机械有限公司 | Flower basket free path implementation method, software system, device, server and system |
| CN113736571A (en) * | 2021-08-30 | 2021-12-03 | 横店集团东磁股份有限公司 | Pickling solution for graphite boat, preparation method of pickling solution and graphite boat cleaning method using pickling solution |
| CN114276814A (en) * | 2021-12-15 | 2022-04-05 | 湖北兴福电子材料有限公司 | Cleaning fluid for silicon wafer etching |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102938431B (en) | A kind of silicon chip cleaning and texturing method of solar cell | |
| CN102842652B (en) | The method of the making herbs into wool pickling of silicon chip | |
| CN106952805A (en) | A kind of graphite boat cleaning | |
| CN109037112B (en) | Method for etching crystalline silicon solar SE battery by using inorganic alkali | |
| CN103700733B (en) | The clean method of the N-type crystalline silicon substrate of solar cell | |
| CN110137302A (en) | The cleaning of silicon heterojunction solar battery crystalline silicon substrate and etching method and silicon heterojunction solar battery | |
| CN107523881A (en) | A kind of preprocess method for preparing monocrystalline silicon suede | |
| CN107658367A (en) | A kind of Wet chemical processing method of hetero-junction solar cell | |
| CN103400890A (en) | Reworking technology for striping re-plating of crystal silicon solar cell PECVD (plasma enhanced chemical vapor deposition) chromatic aberration slice | |
| CN107331734B (en) | It does over again after a kind of cell piece PECVD plated films the processing method of piece | |
| CN105118898A (en) | Silicon chip surface passivation method and manufacturing method of N type double-face cell based thereon | |
| CN102005504A (en) | Silicon wafer fine hair making method capable of improving solar cell conversion efficiency | |
| CN101217173A (en) | A novel method of diffused layer removal on the single surface | |
| CN102560498A (en) | Phosphorus silicon cleaning solution for crystalline silicon solar cell and cleaning method | |
| CN101339966A (en) | Post produced velvet production process of solar cell | |
| CN110993724A (en) | Texturing and cleaning method for heterojunction solar cell | |
| CN103789839B (en) | A kind of etching method of weak oxide monocrystalline silicon piece | |
| US20130252427A1 (en) | Method for cleaning textured silicon wafers | |
| CN106833954A (en) | The additive of fine-hair maring using monocrystalline silicon slice prerinse liquid and its application | |
| CN107393818A (en) | A kind of secondary etching method of the soda acid of polysilicon solar cell and its polysilicon | |
| CN104393094B (en) | N-type silicon chip cleaning texturing method for HIT battery | |
| CN108766869A (en) | A kind of silicon chip of solar cell slot type cleaning method | |
| CN102332501B (en) | Washing method for removing flower basket mark in process of producing solar cell | |
| CN107623055B (en) | A kind of preparation method of quasi- monocrystalline battery | |
| CN104613732A (en) | Before-epitaxy polished section rapid drying method after cleaning |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20120711 |