CN106625076B - A kind of surface processing device and surface treatment method of diamond wire saw silicon chip - Google Patents
A kind of surface processing device and surface treatment method of diamond wire saw silicon chip Download PDFInfo
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- CN106625076B CN106625076B CN201710053477.XA CN201710053477A CN106625076B CN 106625076 B CN106625076 B CN 106625076B CN 201710053477 A CN201710053477 A CN 201710053477A CN 106625076 B CN106625076 B CN 106625076B
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- abrasion
- silicon chip
- diamond wire
- wire saw
- saw silicon
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Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B7/00—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor
- B24B7/20—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground
- B24B7/22—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain
- B24B7/228—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain for grinding thin, brittle parts, e.g. semiconductors, wafers
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B41/00—Component parts such as frames, beds, carriages, headstocks
- B24B41/06—Work supports, e.g. adjustable steadies
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B57/00—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents
Abstract
The invention belongs to silicon chip surface processing technology fields, and in particular to a kind of surface processing device and surface treatment method of diamond wire saw silicon chip.The surface processing device includes an open-topped abrasion slot and two the first abrasion frame, the second abrasion framves being oppositely arranged, and abrasive particle suspension is filled in abrasion slot；Adsorbent equipment is installed on the first abrasion frame, abrasion device or adsorbent equipment are installed on the second abrasion frame；Adsorbent equipment is used to adsorb fixed pending diamond wire saw silicon chip, denudes and is provided with tabular or round-shaped abrasive surface on device.The present invention is by preparing abrasive particle suspension, abrasion processing is carried out to diamond wire saw silicon chip surface using the irregular corner angle of abrasive particle, the present invention is handled using abrasion completely, without chemical substances such as the acid, the alkali that use strong corrosive, safety and environmental protection, treatment effeciency are high.
Description
Technical field
The invention belongs to silicon chip surface processing technology fields, and in particular to a kind of surface treatment of diamond wire saw silicon chip
Device and surface treatment method.
Background technology
Crystal silicon chip is obtained with its excellent electric property in technical fields such as semiconductor, liquid crystal display and solar cells
To being widely applied.Along with the rapid development of photovoltaic industry, the demand of crystal silicon chip is also increasing year by year.Currently, brilliant
The cutting processing of body silicon chip mainly uses two kinds of techniques of mortar line cutting technology or diamond wire saw technology.
Mortar line cutting technology be driven by the steel wire of high-speed motion the silicon-carbide particle in mortar roll grinding to
Cutting silicon chip, the defect that this cutting mode generally existing cutting speed is slow, efficiency in blocks is low, on this basis, novel gold
Hard rock line cutting technology just comes into being.Diamond wire saw technology be by tiny diamond particles by gluing, plating or
The techniques such as person's soldering are fixed on steel wire, the diamond particles pair in the high speed motions of steel wire by being attached on steel wire
Silicon chip carries out grinding cutting.Compared to mortar wire cutting, the cutting speed of diamond wire saw technology can improve twice or more,
Therefore it is more suitable for producing in batches on a large scale.
What diamond wire saw technology utilized is the reciprocating motion of diamond wire, therefore the silicon chip surface processed is usual
It will appear periodically cutting cut, and surface-brightening, roughness is relatively low, and what is thus brought is the reflectivity liter of silicon chip surface
Height, and then influence battery efficiency.In order to improve the roughness of silicon chip surface, existing processing method is using different component and dense
The acid solution with deep-etching ability or sour gas of degree are etched silicon chip surface.Acid solution or sour gas
The use of body can not only influence operator's health, easy to produce environmental pollution, but also etching operation is needed by special container
With special processing technology, additional production and processing cost will be generated.In addition to this, the surface corrosion degree of silicon chip also more difficult
It holds, although the surface topography of silicon chip can be changed to a certain extent, it can be difficult to obtaining uniform and stable treatment effect.
Invention content
There is technical issues that periodically to cut to solve existing diamond wire saw silicon chip surface, the present invention
A kind of surface processing device and surface treatment method of diamond wire saw silicon chip are provided.
Technical solution of the invention is：A kind of surface processing device of diamond wire saw silicon chip, special character
It is：The first abrasion frame, the second abrasion frame being oppositely arranged including an open-topped abrasion slot and two, the abrasion slot
It is interior to be filled with abrasive particle suspension；Adsorbent equipment is installed on the first abrasion frame, is equipped on the second abrasion frame
Denude device or adsorbent equipment；The adsorbent equipment is used to adsorb fixed pending diamond wire saw silicon chip, the mill
It is provided with tabular or round-shaped abrasive surface on erosion device.
Above-mentioned adsorbent equipment includes the suction tray being connected as one and abrasive disk, and absorption is formed between suction tray and abrasive disk
Cavity；The suction tray is fixedly connected with motion control arm one end of abrasion frame；The surface of the abrasive disk be provided with it is multiple with
Adsorb the adsorption hole of cavity connection；The absorption cavity is connected by the absorption pipeline being arranged on suction tray with negative pressure generating device
It is logical.
Above-mentioned abrasive particle suspension is that the abrasive particle by hardness more than diamond wire saw silicon chip is scattered in solvent
It obtains, the mass fraction of abrasive particle is 10-80%.
Above-mentioned abrasive particle is the silicon carbide that particle size is 2-50 μm, diamond, corundum, boron carbide, silicon nitride, nitridation
One or several kinds of mixing in boron, aluminium nitride, zirconium oxide.
Above-mentioned abrasive particle is the silicon-carbide particle that particle size is 5-15 μm.
The mass fraction of above-mentioned abrasive particle is 30-60%.
The present invention also provides a kind of surface treatment methods of diamond wire saw silicon chip, are characterized in that：Including with
Lower step：
1) it prepares abrasive particle suspension and fills to abrasion slot；
2) two panels diamond wire saw silicon chip is individually fixed on the abrasion frame that two are oppositely arranged；
3) abrasion frame is stretched into abrasion slot, diamond wire saw silicon chip is made to be immersed in abrasive particle suspension；
4) two abrasion framves are moved toward one another on the direction of diamond wire saw silicon chip surface, make two panels diamond
Wire cutting silicon chip mutually close to；
5) two abrasion frame relative motions on the direction for being parallel to diamond wire saw silicon chip surface, to two panels diamond
The surface of wire cutting silicon chip is carried out at the same time abrasion processing；
6) diamond wire saw silicon chip is removed after abrasion frame being removed abrasive particle suspension, completes diamond wire saw silicon
The surface treatment of piece single side.
The surface treatment method of above-mentioned diamond wire saw silicon chip is further comprising the steps of：
7) it will be again fixed on behind two panels diamond wire saw silicon wafer turnover surface on two abrasion framves, execute step 3) extremely
Step 6) completes the two-sided surface treatment of diamond wire saw silicon chip.
Preferably, in step 4) two panels diamond wire saw silicon chip mutually close to during, while controlling abrasion frame
Two panels diamond wire saw silicon chip is set to generate relative motion along the direction of diamond wire saw silicon chip surface.
The present invention also provides the surface treatment methods of another diamond wire saw silicon chip, are characterized in that：Including
Following steps：
1) it prepares abrasive particle suspension and fills to abrasion slot；
2) a piece of diamond wire saw silicon chip is fixed on the first abrasion frame, abrasion device is fixed on the second abrasion frame
On；Tabular or round-shaped abrasive surface are provided on the abrasion device；
3) the first abrasion frame and the second abrasion frame are stretched into abrasion slot, makes diamond wire saw silicon chip and abrasion device leaching
Not in abrasive particle suspension；
4) the first abrasion frame and the second abrasion frame are moved toward one another on the direction of diamond wire saw silicon chip surface,
Make diamond wire saw silicon chip with denude device abrasive surface mutually close to；
5) the first abrasion frame and second abrasion frame relative motion on the direction for being parallel to diamond wire saw silicon chip surface,
Abrasion device carries out abrasion processing to diamond wire saw silicon chip surface；
6) diamond wire saw silicon chip is removed after the first abrasion frame being removed abrasive particle suspension, diamond wire is completed and cuts
Cut the surface treatment of silicon chip single side.
The surface treatment method of above-mentioned diamond wire saw silicon chip is further comprising the steps of：
7) it will be again fixed on the first abrasion frame behind diamond wire saw silicon wafer turnover surface, execute step 3) extremely
Step 6) completes the two-sided surface treatment of diamond wire saw silicon chip.
Preferably, in step 4) diamond wire saw silicon chip with abrasion device abrasive surface mutually close to during,
The first abrasion frame of control simultaneously and/or the second abrasion frame make diamond wire saw silicon chip and denude the abrasive surface of device along Buddha's warrior attendant
Relative motion is generated on the direction of stone line cutting silicon chip surface.
The beneficial effects of the present invention are：
(1) present invention is by preparing abrasive particle suspension, control diamond wire saw silicon chip with tabular or
The abrasion device (or two panels diamond wire saw silicon chip) of round-shaped abrasive surface is mutually close to making the mill with irregular shape
Uniformly the embedding diamond wire saw silicon chip surface that is attached to forms abrasive particle layer to erosion particle, and control abrasion frame carries out relative motion, profit
Abrasion processing is carried out to diamond wire saw silicon chip surface with the irregular corner angle of abrasive particle, eliminates diamond wire saw silicon chip
The periodical cutting cut on surface, and improve its rough surface uniformity.This method is handled using abrasion completely, and
The chemical substances such as acid, the alkali of strong corrosive, safety and environmental protection, treatment effeciency height need not be used.
(2) present invention is surface-treated diamond wire saw silicon chip by the way of abrasion, with traditional acid
Etching process is compared, and can be recycled to the abrasion waste material (silica flour or silicon particle) of generation, while abrasive particle is outstanding
Supernatant liquid can also recycle Reusability, greatly save processing cost.
(3) present invention, can by mutually being denuded two panels diamond wire saw silicon chip in abrasive particle suspension
To be completed at the same time the surface treatment of two panels diamond wire saw silicon chip, surface processing efficiency is made to double.
(4) the abrasion frame used in the present invention carries out absorption fixation using adsorbent equipment to diamond wire saw silicon chip, can
Efficiently and stably to fix pending diamond wire saw silicon chip, removed by way of going absorption again after completing to be surface-treated
Diamond wire saw silicon chip, it is easy to operate efficient, it is suitble to large-scale intelligent industrial flow-line application.
(5) adsorbent equipment in the present invention includes suction tray and abrasive disk, and suction tray, will be golden for generating negative-pressure adsorption power
Hard rock wire cutting silicon chip is securely adsorbed on the smooth adsorbent equipment in surface, and while ensureing abrasion stability, it is broken to reduce silicon chip
The bad risk of rhegma.
(6) present invention can be according to opposite between the particle size of abrasive particle adjustment two panels diamond wire saw silicon chip
Distance, and then abrasion dynamics strictly is controlled, different surface treatment demands is adapted to, different surface treatment effects is generated.
(7) present invention control two panels diamond wire saw silicon chip mutually close to during, both can control simultaneously
Between generate relative motion along silicon chip surface direction, ensure to form stable abrasive particle layer, avoid generating gas on abrasive surface
Bubble improves abrasive effect.
Description of the drawings
Fig. 1 is the structural schematic diagram of surface processing device in the embodiment of the present invention one.
Fig. 2 is the structural schematic diagram of adsorbent equipment in the embodiment of the present invention one.
Fig. 3 is the A direction views of Fig. 2.
Fig. 4 is the structural schematic diagram of surface processing device in the embodiment of the present invention two.
Fig. 5 is the structural schematic diagram that device is denuded in the embodiment of the present invention two.
Fig. 6 is the structural schematic diagram that device is denuded in the embodiment of the present invention three.
Specific implementation mode
It can be effective using the surface processing device and surface treatment method of diamond wire saw silicon chip provided by the invention
The systematicness for removing diamond wire saw silicon chip surface cuts cut, improves surface roughness.With reference to specific embodiment pair
Technical scheme of the present invention is described in detail.
Embodiment one
Referring to Fig. 1, the present embodiment is a kind of surface processing device of diamond wire saw silicon chip, and structure includes two phases
To the abrasion frame 1 of setting and an open-topped abrasion slot 2, abrasive particle suspension 3 is filled in abrasion slot 2.Denude frame 1
Including motion control arm 4 and the adsorbent equipment 5 for being fixed on 4 one end of motion control arm, adsorbent equipment 5 is pending for adsorbing fixation
Diamond wire saw silicon chip 6.
Referring to Fig. 2, the more preferred structure of adsorbent equipment 5 includes 51 He of suction tray being connected as one in the present embodiment
Abrasive disk 52 forms absorption cavity 53 between suction tray 51 and abrasive disk 52, suction tray 51 is fixed with 4 one end of motion control arm to be connected
It connects.As shown in figure 3, the surface of abrasive disk 52 is provided with multiple adsorption holes 54 being connected with absorption cavity 53, cavity 53 is adsorbed
It is connected with negative pressure generating device further through the absorption pipeline 55 being arranged on suction tray 51.In specific works, negative pressure generates dress
The negative pressure for making to generate in absorption cavity 53 far below atmospheric pressure (or close to vacuum) is set, then is made by adsorption hole 54 pending
Diamond wire saw silicon chip 6 be securely adsorbed on the surface of abrasive disk 52.The surface of abrasive disk 52 is smooth, ensures that abrasion is steady
While qualitative, the risk of die crack damage is reduced.Abrasive particle suspension 3 is that hardness is more than diamond wire saw silicon chip
Abrasive particle be scattered in and obtained in solvent, the mass fraction of abrasive particle is 10-80%.Abrasive particle can select grain size
Silicon-carbide particle, diamond particles or the corundum in granules etc. that size is 2-50 μm.More preferred abrasive particle is that grain size is big
Small is 5-15 μm of silicon-carbide particle.It is more preferable that the mass fraction of abrasive particle is controlled into the treatment effect between 40-50%.Solvent
Deionized water can be selected, while suitable dispersant or suspending agent can also be added as needed in solvent.
Embodiment two
Referring to Fig. 4, the present embodiment is the surface processing device of another diamond wire saw silicon chip, and structure includes two
The first abrasion frame 11, second being oppositely arranged denudes frame 12 and an open-topped abrasion slot 2, and mill is filled in abrasion slot 2
Lose particle suspension liquid 3.First abrasion frame 11 includes motion control arm 4 and the adsorbent equipment 5 for being fixed on 4 one end of motion control arm,
Adsorbent equipment 5 is used to adsorb fixed pending diamond wire saw silicon chip 6.Abrasion device 7 is installed on second abrasion frame 12.
As shown in figure 5, being provided with flat abrasive surface 71 on abrasion device 7 in the present embodiment, (Fig. 5 is the B that device is denuded in Fig. 4
Direction view).In actual use, abrasion device 7 can be fixed in abrasion slot 2, by pending diamond wire saw silicon chip 6
It is tightly attached on abrasive surface 71, centre forms abrasive particle layer.6 sustained vibration in vertical plane of diamond wire saw silicon chip is controlled,
To make abrasive particle layer denude silicon chip surface.In addition, abrasion device 7 can also be with diamond wire saw silicon chip 6 one
It rises and synchronizes incorgruous movement, improve abrasion efficiency.
Embodiment three
Referring to Fig. 6 (Fig. 6 is the B direction views for denuding device in Fig. 4), the difference between the present embodiment and the second embodiment lies in that, mill
It loses and carries round-shaped abrasive surface 72 on device 7.In denuding processing procedure, abrasive surface 72 can be in diamond wire saw silicon chip
6 wait for is rotatable around its axis in abrasive surfaces.
Example IV
The present embodiment is a kind of surface treatment method of diamond wire saw silicon chip, is as follows：
1) diamond particles that particle diameter distribution is 2-30 μm are chosen to be dispersed in deionized water, then add appropriate dispersion
Abrasive particle suspension is formed after agent and suspending agent, the wherein mass fraction of diamond particles is 80%.
2) two panels diamond wire saw silicon chip is adsorbed respectively and is fixed on the abrasion frame that two are oppositely arranged：By diamond
After wire cutting silicon chip is attached on abrasion plate, starts negative pressure generating device, diamond wire saw silicon chip is made securely to adsorb fixation.
3) abrasion frame is stretched into abrasion slot, diamond wire saw silicon chip is made to be immersed in abrasive particle suspension, kept
Diamond wire saw silicon chip is vertical state (being conducive to denude waste material to abrasion trench bottom deposition).
4) two motion control arms drive two abrasion framves to generate in the horizontal direction and move toward one another respectively, make two panels diamond
Wire cutting silicon chip mutually close to.Close to after fixed range, the embedding surface for being attached to diamond wire saw silicon chip of diamond particles, shape
At abrasive particle layer.
5) two motion control arms drive two abrasion framves to be vibrated with the frequency of 10Hz in vertical plane respectively, two
The direction of vibration for denuding frame is opposite.Abrasion processing is carried out at the same time to the surface of two panels diamond wire saw silicon chip.
6) after 30 seconds, abrasion frame is removed into abrasion slot, negative pressure generating device is closed, removes diamond wire saw silicon chip, it is complete
At the surface treatment of diamond wire saw silicon chip single side.
7) it is absorbed and fixed at again behind diamond wire saw silicon wafer turnover surface on abrasion frame, executes step 3) again to step
It is rapid 6), complete the two-sided surface treatment of diamond wire saw silicon chip.
Embodiment five
The present embodiment is a kind of surface treatment method of diamond wire saw silicon chip, is as follows：
1) it chooses the silicon-carbide particle that particle diameter distribution is 5-15 μm to be dispersed in deionized water, then adds appropriate dispersion
Abrasive particle suspension is formed after agent and suspending agent, the wherein mass fraction of silicon-carbide particle is 60%.
2) two panels diamond wire saw silicon chip is adsorbed respectively and is fixed on the abrasion frame that two are oppositely arranged：By diamond
After wire cutting silicon chip is attached on abrasion plate, starts negative pressure generating device, diamond wire saw silicon chip is made securely to adsorb fixation.
3) abrasion frame is stretched into abrasion slot, diamond wire saw silicon chip is made to be immersed in abrasive particle suspension, kept
Diamond wire saw silicon chip is vertical state.
4) two motion control arms drive two abrasion framves to generate in the horizontal direction and move toward one another respectively, make two panels diamond
Wire cutting silicon chip slowly mutually close to.In this course, while controlling abrasion frame makes two panels diamond wire saw silicon chip exist
Relative motion is generated in vertical plane, the motion frequency of two abrasion framves is 5Hz.When two panels diamond wire saw silicon chip is close to extremely
After fixed range, the embedding surface for being attached to diamond wire saw silicon chip of silicon-carbide particle forms abrasive particle layer.
5) it keeps at a distance constant, the dynamic two abrasions frame of two motion control armbands continues the frequency of 5Hz in vertical plane
It is vibrated, the direction of vibration of two abrasion framves is opposite.The surface of two panels diamond wire saw silicon chip is carried out at the same time at abrasion
Reason.
6) after 1 minute, abrasion frame is removed into abrasion slot, negative pressure generating device is closed, removes diamond wire saw silicon chip, it is complete
At the surface treatment of diamond wire saw silicon chip single side.
7) it is absorbed and fixed at again behind diamond wire saw silicon wafer turnover surface on abrasion frame, executes step 3) again to step
It is rapid 6), complete the two-sided surface treatment of diamond wire saw silicon chip.
Embodiment six
The present embodiment is a kind of surface treatment method of diamond wire saw silicon chip, is as follows：
1) it chooses the silicon-carbide particle that particle diameter distribution is 15-30 μm to be dispersed in deionized water, then adds appropriate point
Abrasive particle suspension is formed after powder and suspending agent, the wherein mass fraction of silicon-carbide particle is 30%.
2) two panels diamond wire saw silicon chip is adsorbed respectively and is fixed on the abrasion frame that two are oppositely arranged：By diamond
After wire cutting silicon chip is attached on abrasion plate, starts negative pressure generating device, diamond wire saw silicon chip is made securely to adsorb fixation.
3) abrasion frame is stretched into abrasion slot, diamond wire saw silicon chip is made to be immersed in abrasive particle suspension, kept
Diamond wire saw silicon chip is vertical state.
4) two motion control arms drive two abrasion framves to generate in the horizontal direction and move toward one another respectively, make two panels diamond
Wire cutting silicon chip slowly mutually close to.In this course, while controlling abrasion frame makes two panels diamond wire saw silicon chip exist
Relative motion is generated in vertical plane, the motion frequency of two abrasion framves is 8Hz.When two panels diamond wire saw silicon chip is close to extremely
After fixed range, the embedding surface for being attached to diamond wire saw silicon chip of silicon-carbide particle forms abrasive particle layer.
5) it keeps at a distance constant, the dynamic two abrasions frame of two motion control armbands continues the frequency of 8Hz in vertical plane
It is vibrated, the direction of vibration of two abrasion framves is opposite.The surface of two panels diamond wire saw silicon chip is carried out at the same time at abrasion
Reason.
6) after 1.5 minutes, abrasion frame is removed into abrasion slot, negative pressure generating device is closed, removes diamond wire saw silicon chip,
Complete the surface treatment of diamond wire saw silicon chip single side.
7) it is absorbed and fixed at again behind diamond wire saw silicon wafer turnover surface on abrasion frame, executes step 3) again to step
It is rapid 6), complete the two-sided surface treatment of diamond wire saw silicon chip.
Embodiment seven
The present embodiment is a kind of surface treatment method of diamond wire saw silicon chip, is as follows：
1) it chooses the corundum in granules that particle diameter distribution is 30-50 μm to be dispersed in deionized water, then adds appropriate dispersion
Abrasive particle suspension is formed after agent and suspending agent, the wherein mass fraction of corundum in granules is 10%.
2) two panels diamond wire saw silicon chip is adsorbed respectively and is fixed on the abrasion frame that two are oppositely arranged：By diamond
After wire cutting silicon chip is attached on abrasion plate, starts negative pressure generating device, diamond wire saw silicon chip is made securely to adsorb fixation.
3) abrasion frame is stretched into abrasion slot, diamond wire saw silicon chip is made to be immersed in abrasive particle suspension, kept
Diamond wire saw silicon chip is vertical state.
4) two motion control arms drive two abrasion framves to generate in the horizontal direction and move toward one another respectively, make two panels diamond
Wire cutting silicon chip slowly mutually close to.In this course, while controlling abrasion frame makes two panels diamond wire saw silicon chip exist
Relative motion is generated in vertical plane, the motion frequency of two abrasion framves is 3Hz.When two panels diamond wire saw silicon chip is close to extremely
After fixed range, the embedding surface for being attached to diamond wire saw silicon chip of corundum in granules forms abrasive particle layer.
5) it keeps at a distance constant, the dynamic two abrasions frame of two motion control armbands continues the frequency of 3Hz in vertical plane
It is vibrated, the direction of vibration of two abrasion framves is opposite.The surface of two panels diamond wire saw silicon chip is carried out at the same time at abrasion
Reason.
6) after 2 minutes, abrasion frame is removed into abrasion slot, negative pressure generating device is closed, removes diamond wire saw silicon chip, it is complete
At the surface treatment of diamond wire saw silicon chip single side.
7) it is absorbed and fixed at again behind diamond wire saw silicon wafer turnover surface on abrasion frame, executes step 3) again to step
It is rapid 6), complete the two-sided surface treatment of diamond wire saw silicon chip.
Embodiment eight
The present embodiment is a kind of surface treatment method of diamond wire saw silicon chip, is as follows：
1) it chooses the silicon-carbide particle that particle diameter distribution is 5-15 μm to be dispersed in deionized water, then adds appropriate dispersion
Abrasive particle suspension is formed after agent and suspending agent, the wherein mass fraction of silicon-carbide particle is 50%.
2) a piece of diamond wire saw silicon chip is fixed on the first abrasion frame, abrasion device is fixed on the second abrasion frame
On；It is provided with tabular or round-shaped abrasive surface on abrasion device.
3) the first abrasion frame and the second abrasion frame are stretched into abrasion slot, makes diamond wire saw silicon chip and abrasion device leaching
Not in abrasive particle suspension.
4) the first abrasion frame and the second abrasion frame generate move toward one another in the horizontal direction, make diamond wire saw silicon chip and mill
Lose device abrasive surface mutually close to.After two panels diamond wire saw silicon chip is close to fixed range, silicon-carbide particle is embedding attached
On the surface of diamond wire saw silicon chip, abrasive particle layer is formed.
5) it keeps the distance between the first abrasion frame and the second abrasion frame constant, fixes the second abrasion frame, make the first abrasion
Frame is vibrated in vertical plane with the frequency of 5Hz, and abrasion processing is carried out to the surface of diamond wire saw silicon chip.
6) after 1 minute, the first abrasion frame is removed into abrasion slot, diamond wire saw silicon chip is removed, completes diamond wire and cut
Cut the surface treatment of silicon chip single side.
7) it will be once again secured on the first abrasion frame behind diamond wire saw silicon wafer turnover surface, execute step 3) extremely again
Step 6) completes the two-sided surface treatment of diamond wire saw silicon chip.
Claims (6)
1. a kind of surface treatment method of diamond wire saw silicon chip, it is characterised in that：Include the following steps：
1) it prepares abrasive particle suspension and fills to abrasion slot；
2) two panels diamond wire saw silicon chip is individually fixed on the abrasion frame that two are oppositely arranged；
3) abrasion frame is stretched into abrasion slot, diamond wire saw silicon chip is made to be immersed in abrasive particle suspension；
4) two abrasion framves are moved toward one another on the direction of diamond wire saw silicon chip surface, and two panels diamond wire is made to cut
Cut silicon chip mutually close to；
5) two abrasion frame relative motions on the direction for being parallel to diamond wire saw silicon chip surface, cut two panels diamond wire
The surface for cutting silicon chip is carried out at the same time abrasion processing；
6) diamond wire saw silicon chip is removed after abrasion frame being removed abrasive particle suspension, completes diamond wire saw silicon chip list
The surface treatment in face.
2. the surface treatment method of diamond wire saw silicon chip according to claim 1, it is characterised in that：Further include following
Step：
7) it will be again fixed on behind two panels diamond wire saw silicon wafer turnover surface on two abrasion framves, execute step 3) to step
6) the two-sided surface treatment of diamond wire saw silicon chip, is completed.
3. the surface treatment method of diamond wire saw silicon chip according to claim 1 or 2, it is characterised in that：In step
4) two panels diamond wire saw silicon chip is mutually during in, while controlling abrasion frame and make two panels diamond wire saw silicon chip
Relative motion is being generated along the direction of diamond wire saw silicon chip surface.
4. a kind of surface treatment method of diamond wire saw silicon chip, it is characterised in that：Include the following steps：
1) it prepares abrasive particle suspension and fills to abrasion slot；
2) a piece of diamond wire saw silicon chip is fixed on the first abrasion frame, abrasion device is fixed on the second abrasion frame；
Tabular or round-shaped abrasive surface are provided on the abrasion device；
3) the first abrasion frame and the second abrasion frame are stretched into abrasion slot, diamond wire saw silicon chip and abrasion device is made to be immersed in
In abrasive particle suspension；
4) the first abrasion frame and the second abrasion frame are moved toward one another on the direction of diamond wire saw silicon chip surface, make gold
Hard rock wire cutting silicon chip with abrasion device abrasive surface mutually close to；
5) the first abrasion frame and second abrasion frame relative motion on the direction for being parallel to diamond wire saw silicon chip surface, abrasion
Device carries out abrasion processing to diamond wire saw silicon chip surface；
6) diamond wire saw silicon chip is removed after the first abrasion frame being removed abrasive particle suspension, completes diamond wire saw silicon
The surface treatment of piece single side.
5. the surface treatment method of diamond wire saw silicon chip according to claim 4, it is characterised in that：Further include following
Step：
7) it will be again fixed on the first abrasion frame behind diamond wire saw silicon wafer turnover surface, execute step 3) to step
6) the two-sided surface treatment of diamond wire saw silicon chip, is completed.
6. the surface treatment method of diamond wire saw silicon chip according to claim 4 or 5, it is characterised in that：In step
4) in diamond wire saw silicon chip with abrasion device abrasive surface mutually during, while control first abrasion frame and/
Or second abrasion frame make diamond wire saw silicon chip with denude device abrasive surface along the side of diamond wire saw silicon chip surface
Relative motion is generated upwards.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710053477.XA CN106625076B (en) | 2017-01-22 | 2017-01-22 | A kind of surface processing device and surface treatment method of diamond wire saw silicon chip |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710053477.XA CN106625076B (en) | 2017-01-22 | 2017-01-22 | A kind of surface processing device and surface treatment method of diamond wire saw silicon chip |
Publications (2)
| Publication Number | Publication Date |
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| CN106625076A CN106625076A (en) | 2017-05-10 |
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| JPH08760B2 (en) * | 1991-03-14 | 1996-01-10 | 信越半導体株式会社 | Quality inspection method for silicon wafers |
| JP3456446B2 (en) * | 1999-05-28 | 2003-10-14 | 日立電線株式会社 | Semiconductor crystal wafer cleaning method |
| CN100484709C (en) * | 2003-11-18 | 2009-05-06 | 广东工业大学 | Bidimensional fluid vibration ultra smooth surface polishing equipment and its polishing method |
| CN103658096B (en) * | 2012-08-31 | 2015-10-21 | 浙江昱辉阳光能源有限公司 | A kind of cleaning method of silicon wafer cut by diamond wire |
| CN103660050B (en) * | 2012-09-03 | 2016-03-09 | 苏州协鑫光伏科技有限公司 | Multi-wire cutting machine for silicon wafer diamond wire cutting liquid system |
| CN104308693B (en) * | 2014-10-16 | 2018-12-07 | 中山市吉尔科研技术服务有限公司 | A kind of centrifugal mixer formula optical mirror slip polissoir |
| CN104900509B (en) * | 2015-06-04 | 2017-10-24 | 苏州晶牧光材料科技有限公司 | The surface treatment method and etching method of diamond wire saw silicon chip |
| CN206509856U (en) * | 2017-01-22 | 2017-09-22 | 朱胜利 | A kind of surface processing device of diamond wire saw silicon chip |
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