KR101919122B1 - Apparatus and method treating substrate for seperation process - Google Patents

Apparatus and method treating substrate for seperation process Download PDF

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KR101919122B1
KR101919122B1 KR1020150101669A KR20150101669A KR101919122B1 KR 101919122 B1 KR101919122 B1 KR 101919122B1 KR 1020150101669 A KR1020150101669 A KR 1020150101669A KR 20150101669 A KR20150101669 A KR 20150101669A KR 101919122 B1 KR101919122 B1 KR 101919122B1
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chamber
substrate
liquid
processing
cleaning
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Korean (ko)
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KR20160019857A (en
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조윤선
김한옥
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주식회사 제우스
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02052—Wet cleaning only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02046—Dry cleaning only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber

Abstract

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a substrate processing apparatus and a processing method such as a semiconductor wafer, and more particularly, to a process separation type substrate processing apparatus and a processing method capable of separating a liquid processing process such as an etching process and a cleaning process, .
According to an aspect of the present invention, there is provided a process separation type substrate processing apparatus including a first chamber for performing a liquid processing process for supplying a first processing liquid to a substrate, a liquid processing process for supplying a second processing liquid to the substrate, And a transferring unit for transferring the substrate between the first and second chambers, wherein the process performed in the first chamber and the second chamber is separated to suppress crystal formation in the chamber .

Figure 112015069427637-pat00001

Description

[0001] APPARATUS AND METHOD TREATING SUBSTRATE FOR SEPERATION PROCESS [0002]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a substrate processing apparatus and a processing method such as a semiconductor wafer, and more particularly, to a process separation type substrate processing apparatus and a processing method capable of separating a liquid processing process such as an etching process and a cleaning process, .

Generally, a semiconductor device is formed through various processes such as a photo process, an etching process, an ion implantation process, and a deposition process for a substrate such as a silicon wafer .

In the course of performing each process, a cleaning process is performed to remove various contaminants adhering to the substrate. The cleaning process includes a chemical treatment process for removing contaminants on a substrate by a chemical, a wet cleaning process for removing a chemical solution remaining on the substrate by pure water, And a drying process for removing the remaining pure water on the surface.

In more detail, the etching process in a semiconductor device manufacturing process forms a resist film in a predetermined pattern on a film to be processed formed on a substrate, and a process such as etching or ion implantation is performed using the resist film as a mask, The removed resist film is removed from above the substrate.

The substrate processing method for the above process can be roughly divided into a dry processing method and a wet processing method. Of these, the wet processing method is a method using various chemical solutions, And a single wafer type apparatus for processing a substrate in a sheet unit.

The batch type processing apparatus immerses a plurality of substrates all at once in a cleaning tank containing a cleaning liquid to remove a contamination source. However, the conventional batch type processing apparatus has a disadvantage in that it is not easy to cope with the tendency of the substrate to become larger, and the use of the cleaning liquid is increased.

In addition, when the substrate is broken during the process in the batch type processing apparatus, the entire substrate in the cleaning tank is affected, so that a large number of substrate defects may occur.

In the batch type wafer cleaning method, since a plurality of wafers are cleaned at a time, the cleaning efficiency is high due to a short cleaning time and a high treatment rate. However, the cleaning efficiency is low due to cross contamination between the wafers. There is a problem that the process result after the treatment is not uniform and the use of a large amount of the cleaning liquid is costly and causes environmental pollution.

On the other hand, the single wafer type wafer cleaning method is a method of cleaning a single wafer by using a small amount of cleaning liquid. However, since the cleaning efficiency is low, there is no cross contamination between wafers and the wafer is processed in the same condition. The process results are uniform and the cleaning is performed in a high cleanliness atmosphere, which is advantageous in that the cleaning efficiency is high.

Particularly, batch-wise cleaning methods are limited due to large-scale wafers of wafers, and cleaning efficiency is more important for highly integrated semiconductor devices. Therefore, the use of single-wafer type cleaning methods is gradually increasing and recently single- have.

The single wafer processing apparatus is a method of processing in a unit of a single substrate. By jetting the processing liquid and the cleaning liquid or the drying gas onto the surface of the substrate rotated at a high speed, the centrifugal force due to rotation of the substrate and the pressure accompanying the jetting of the cleaning liquid, The etching and the cleaning are carried out by a spinning method for removing the etching solution.

Typically, a single wafer processing apparatus includes a spin chuck which rotates while holding a substrate and a chamber in which a substrate is accommodated and a cleaning process is performed, and a nozzle assembly for supplying a cleaning solution containing a chemical solution, a rinsing solution, a drying gas, .

That is, in the conventional single-wafer type equipment, the substrate is inserted into the chamber, and a series of processes described above such as etching, cleaning, and the like are performed in one chamber.

In recent years, SPM treatment is widely used as a method of removing a resist film, and SPM treatment is performed by supplying a high-temperature SPM (Sulfuric Acid Hydrogen Peroxide Mixture) obtained by mixing sulfuric acid and hydrogen peroxide solution to a resist film.

In general, the SPM process is characterized in that the SPM process is followed by the SC1 process, followed by drying. The SPM is an acid and the SC1 uses an alkaline chemical solution, so crystals are formed when the process is performed in a single chamber.

In the case where acid-alkali crystals are formed in such a chamber, clogging may occur in the exhaust part or the drain part due to the crystal, and contamination due to re-adhesion of the crystal inside the chamber may become a serious problem.

This may be a very negative factor in the lifetime or maintenance of the entire substrate processing apparatus, and in particular, the crystal reattachment of the substrate is a fatal factor which lowers the overall substrate production yield.

Further, when a chemical liquid containing ammonium fluoride such as LAL BOE (Low Ammonium fluoride low surface tension buffered oxide etchant) containing NH4F and HF is used, precipitation of crystals may occur even during the process using only the chemical liquid.

In the case of a process in which such crystals can be generated, it may affect subsequent liquid treatment processes or washing and drying processes, and various problems due to crystals may occur in the single wafer apparatus as described above. have.

DISCLOSURE OF THE INVENTION The present invention has been made in view of the above-mentioned problems, and it is an object of the present invention to provide a single wafer processing apparatus in which a process is separated and processed so as to suppress crystal formation The present invention is directed to a substrate processing apparatus and a substrate processing method.

According to an aspect of the present invention, there is provided a process separation type substrate processing apparatus including a first chamber for performing a liquid processing process for supplying a first processing liquid to a substrate, a liquid processing process for supplying a second processing liquid to the substrate, And a transferring unit for transferring the substrate between the first and second chambers, wherein the process performed in the first chamber and the second chamber is separated to suppress crystal formation in the chamber .

The first treatment liquid may be a chemical solution capable of generating crystals during the liquid treatment process, or the first treatment liquid and the second treatment liquid may be a chemical solution capable of reacting with each other to form crystals.

Therefore, the first treatment liquid is a sulfuric acid strip-based etching solution or ammonium fluoride-containing chemical solution for performing the etching process, and the second treatment solution is a treatment solution or SC1 solution capable of PR strip treatment have.

The first chamber may further include heating means for heating the substrate, and the liquid processing process performed in the first chamber may be a high-temperature SPM etching process.

Furthermore, the process performed in the first chamber may further include a cleaning and drying process, and the substrate processed in the first chamber may be transferred to the second chamber before being completely dried.

The first chamber and the second chamber are arranged vertically, or the first chamber and the second chamber are arranged in parallel left and right, and the transfer unit transfers the substrate between the first and second chambers .

Furthermore, the liquid processing process of the first chamber may be a liquid processing process of the substrate bottom surface, and the transfer unit may be an inversion transfer unit for transferring the substrate between the first and second chambers by reversing.

The apparatus of claim 1, further comprising a third chamber that performs a process of cleaning and drying the substrate, wherein the second chamber performs a liquid processing process for supplying a second processing liquid to the substrate, And a transfer unit for transferring the substrate between the second and third chambers.

According to another aspect of the present invention, there is provided a process separation type substrate processing method including: a liquid processing step of supplying a first processing liquid to a substrate to be processed in a first chamber; And a liquid treatment step of supplying a treatment liquid, wherein the steps performed in the first liquid treatment step and the second liquid treatment step are separated so as to suppress crystal formation in the chamber.

The substrate processing method may further comprise a cleaning step performed in the second chamber and a substrate transfer step of transferring the substrate from the first chamber to the second chamber.

The substrate processing method may also include a cleaning step performed in the third chamber and a substrate transfer step for transferring the substrate to the first chamber, the second chamber, and the third chamber.

Further, the liquid treatment process step of supplying the first process liquid in the first chamber may process the lower surface of the substrate, and the substrate transfer step may be a substrate inversion transfer step of inverting the substrate.

Also, the liquid processing step performed in the first chamber may include an etching process, and the process performed in the second chamber may include any one of a PR strip, an SC1 process, and a pure cleaning process .

The liquid processing step performed in the first chamber may be a high temperature SPM etching step, and the substrate and the SPM may be heated by a separate heating device in the first chamber.

Further, the method may further include cleaning and drying the substrate in the first chamber, wherein the substrate to be cleaned and dried in the first chamber is subjected to the substrate transferring step before the substrate is completely dried.

In the process separation type substrate processing apparatus and substrate processing method according to the present invention as described above, since the liquid processing process of the substrate such as the etching process and the substrate processing process such as PR strip or the cleaning and drying process are performed in separate chambers, There is an advantage in that substrate contamination due to crystal formation in the chamber can be prevented at a level as compared with the case where all processes are processed in the single wafer processing apparatus.

In addition, since the process using the ammonium fluoride-containing process liquid is performed in each chamber separately from the other process, the processes in which crystals can be generated and other processes can be separated to prevent contamination of the substrate by crystals.

When the lower surface of the substrate is processed in the first chamber and the fume generated in the liquid processing step is suppressed from diffusing into the upper portion of the chamber and the fume is removed to the lower portion of the chamber, The inside atmosphere of the chamber can be kept cleaner, and the cleanliness of the substrate processing can be enhanced.

Further, if the transfer unit for transferring the substrate from the first chamber to the second chamber is formed as an inverting transfer unit capable of reversing the substrate, the second chamber can be cleaned and dried efficiently So that the yield of the substrate can be increased.

BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a schematic view of a structure of a process separation type substrate processing apparatus according to an embodiment of the present invention; FIG.
FIG. 2 is a view showing an example in which first and second chambers are vertically arranged in a process separable type substrate processing apparatus according to an embodiment of the present invention, and the SPM process and the cleaning process are separated. FIG.
FIG. 3 is a view showing an example in which first and second chambers are vertically arranged in a process separation type substrate processing apparatus according to an embodiment of the present invention, and an ammonium chloride-containing processing liquid (LAL) process and another process are separated.
4 is a view showing an example in which first and second chambers are horizontally arranged in a process separation type substrate processing apparatus according to an embodiment of the present invention.
FIG. 5 is a view showing an example in which each process is separated by including first, second, and third chambers in a process separation type substrate processing apparatus according to an embodiment of the present invention. FIG.
6 is a view for explaining a substrate processing process performed in a process separation type substrate processing method according to an embodiment of the present invention.

BRIEF DESCRIPTION OF THE DRAWINGS The advantages and features of the present invention, and how to accomplish them, will become apparent by reference to the embodiments described in detail below with reference to the accompanying drawings. Hereinafter, a process separation type substrate processing apparatus and a substrate processing method according to an embodiment of the present invention will be described with reference to the accompanying drawings.

Referring to FIG. 1, a process separation type substrate processing apparatus according to an embodiment of the present invention includes a first chamber 100 for performing a liquid processing process for supplying a first processing liquid to a substrate, a second processing liquid And a transfer unit 300 for transferring the substrate between the first chamber 200 and the second chamber 200. The second chamber 200 is a chamber for performing a liquid treatment process or a cleaning process.

The first chamber 100 and the second chamber 200 are provided as a chamber provided in a conventional single wafer processing apparatus as an element having an internal space for performing a liquid processing process by supplying a first processing solution to a substrate .

The first chamber 100 and the second chamber 200 may each include a processing liquid supply device to perform a liquid processing process of the substrate. The first chamber 100 and the second chamber 200 may be connected to each other, Is characterized in that it is separated so as to inhibit crystal formation in the chamber.

Therefore, the first treatment liquid may be a chemical liquid from which crystals can be generated during the liquid treatment process, or the first treatment liquid and the second treatment liquid may be a chemical solution capable of reacting with each other to form crystals.

Referring to FIG. 2, the first processing solution supplied to the substrate in the first chamber 100 may be a sulfuric acid strip-based etching solution for performing an etching process or a chemical solution containing ammonium fluoride, The liquid may be a treatment liquid or SC1 solution capable of PR strip treatment.

As described above, since the SPM treatment solution is acidic and the SC1 treatment solution is alkaline, the process using the SPM treatment solution is performed in the first chamber 100 and the second chamber 200, respectively, so that crystal formation can be originally suppressed .

Referring to FIG. 3, when a chemical liquid containing ammonium fluoride such as LAL BOE (Low Ammonium fluoride low surface tension buffered oxide etchant) containing H4F and HF is used, crystal precipitation is possible in itself, And the other process is performed in the first chamber 100 and the other process proceeds in the second chamber 200, so that the influence due to the crystal formation in the other process can be blocked.

The first chamber 100 may further include a heating unit 400 for heating the substrate. When the first processing solution in the first chamber 100 is an SPM processing solution, The high temperature SPM etching process can be performed in the first chamber 100.

The heating means 400 serves to increase the temperature of the substrate and the supplied SPM treatment solution to increase the etching efficiency, and may be provided by various types of heaters or the like.

Further, the process performed in the first chamber 100 may further include a cleaning and drying process, and the substrate processed in the first chamber is transferred to the second chamber before being completely dried .

The first chamber 100 processes the wet etching process, and the wet etching process generally includes a cleaning and drying process for primarily removing organic substances or metal by-products from the etching process before the final cleaning and drying process. The cleaning and drying in the wet etching process is not a state in which all residues are removed, and the remaining residues are removed in the final cleaning and drying process.

Since the wet etching process and the final cleaning and drying are performed in different chambers in the process separation type substrate processing apparatus according to the present invention, when the substrate is completely dried during the primary cleaning and drying in the wet etching process, Lt; / RTI >

Therefore, in the first chamber, it is preferable that the substrate is transferred to the second chamber in a wet state, not in a completely dried state, and proceeds to the final cleaning step, and the cleaning effect in the second chamber can be enhanced.

2 and 3, the first chamber 100 and the second chamber 200 are vertically disposed, and the transfer unit 300 is disposed between the first and second chambers, Or the like.

4, the first chamber 100 and the second chamber 200 are arranged in parallel left and right, and the transfer unit 300 has a structure for transferring the substrates in parallel between the first and second chambers ≪ / RTI >

The arrangement of the first chamber 100 and the second chamber 200 is preferably such that the height of the chamber is varied according to the process performed by each chamber, Do.

For example, the chamber that processes the SPM process needs a further internal space than the chamber that processes the other cleaning and drying processes, and the chamber that processes the SPM process is configured up and down, and the chamber that processes the cleaning and drying process is separately The height of the left and right chambers can be changed so that the first chamber that processes the SPM process and the second chamber that processes the cleaning and drying process are vertically disposed to uniform the height of the entire chamber system.

Further, the liquid processing process of the first chamber 100 is a liquid processing process of the bottom surface of the substrate, and the transfer unit 300 includes an inversion transfer unit 310 for transferring the substrate between the first and second chambers, .

As described above, the first chamber 100 is mainly subjected to the wet etching process, and the etching process removes a specific component of the surface of the substrate by the treatment liquid. Therefore, a considerable amount of fume is generated. As the fume rises, It causes pollution.

Therefore, if the substrate processing surface is faced downward, the rise of the fume can be suppressed. If the fume is exhausted to the lower portion of the chamber, the inside of the chamber can be cleanly maintained .

On the other hand, since the second chamber 200 mainly performs a cleaning process, and the cleaning process is effective to perform the cleaning process with the process surface of the substrate as an upper surface, the substrate processed in the first chamber 100 is inverted, It is necessary to insert it into the second chamber 200 as an upper surface.

Accordingly, the transfer unit 300 is provided to the reverse transfer unit 310 for transferring the substrate in an inverted manner, thereby performing the etching and cleaning drying process of the substrate through the first chamber 100 and the second chamber 200 .

5, the second chamber 200 may further include a third chamber 500 for performing a process of cleaning and drying the substrate, wherein the second chamber 200 is provided with a second processing liquid Thereby performing a liquid treatment process.

That is, in the first chamber 100, an etching process, which is a liquid processing process for supplying a first process liquid such as SPM, is performed, and the second chamber 200 is subjected to a liquid processing process for supplying a second process liquid such as SC1 And separately performing the final cleaning and drying processes in the third chamber 500 to perform a substrate processing process.

With this configuration, since separate chambers are divided and divided into individual processes, it is possible to suppress crystal formation between substrate processing steps, to improve the cleanliness of the substrate, and to easily maintain the substrate processing apparatus.

Hereinafter, a process separation type substrate processing method using a process separation type substrate processing apparatus according to an embodiment of the present invention will be described. A liquid separation process step for supplying a first process solution to a substrate to be performed in a first chamber, And a liquid treatment process step of supplying a second treatment liquid to the substrate, wherein the steps performed in the first liquid treatment step and the second liquid treatment step are separated so as to suppress crystal formation in the chamber .

In addition, the method may further include a cleaning step performed in the second chamber so that the first chamber can mainly process the etching process, the second chamber can process the remaining liquid processing and cleaning processes, To the second chamber, as shown in FIG.

Further, including a cleaning step performed in a separate third chamber, the etching process may be primarily processed in the first chamber, the remaining liquid processing process may be performed in the second chamber, and the final cleaning process may be performed in the third chamber .

In this case, the substrate transfer step may include transferring the substrate to the first chamber, the second chamber, and the third chamber.

Referring to FIG. 6, for example, the first chamber is subjected to the etching process 10 step and the second chamber is subjected to a liquid treatment process step such as PR removal 20 or PR strip 30, (40), and the final cleaning step may be performed in a separate third chamber.

The liquid processing step for supplying the first process liquid in the first chamber processes the lower surface of the substrate, and the substrate transfer step comprises a substrate inversion transfer step for inverting the substrate to perform the above etching and cleaning processes can do.

In this process separation type substrate processing method, the liquid processing process step performed in the first chamber includes an etching process, and the process performed in the second chamber includes any one of a PR strip, an SC1 process, or a pure cleaning process As shown in FIG.

The liquid processing step performed in the first chamber may be a high temperature SPM etching step, and the substrate and the SPM may be heated by a separate heating device in the first chamber.

Further, the method may further include cleaning and drying the substrate in the first chamber, wherein the substrate to be cleaned and dried in the first chamber may be subjected to the substrate transfer step before the substrate is completely dried.

As described above, in the etching process, it is essential to clean and dry the substrate in order to primarily remove foreign substances generated during etching. In this case, if the substrate is completely dried, the foreign substances are fixed and the final cleaning is difficult.

Therefore, it is preferable that the substrate is transported to the next process (20, 30, 40) while maintaining the state in which the substrate is not completely dried in the etching process (10).

While the present invention has been described in connection with what is presently considered to be practical exemplary embodiments, it is to be understood that the invention is not limited to the disclosed embodiments, but, on the contrary, will be.

Therefore, it should be understood that the above-described embodiments are to be considered in all respects as illustrative and not restrictive, the scope of the invention being indicated by the appended claims, And all changes or modifications derived from equivalents thereof should be construed as being included within the scope of the present invention.

100; A first chamber 200; The second chamber
300; A transfer unit 310; Reverse feed unit
400; Heating means 500; Third chamber

Claims (16)

A first chamber for performing a process including an etching process or a PR strip process by supplying a first process liquid to a bottom surface of the substrate with the substrate process surface facing downward;
And a liquid processing step of supplying a second processing liquid to an upper surface of the substrate with the substrate processing surface processed in the first chamber facing up,
A transfer unit for transferring the substrate between the first chamber and the second chamber by reversing the substrate;
/ RTI >
Wherein the first treatment liquid is a chemical solution capable of generating crystals during a liquid treatment step or a chemical solution capable of reacting with the second treatment liquid to generate crystals,
Wherein the first chamber further comprises a heating means for heating an upper surface of the substrate,
Wherein the fume generated during the liquid processing in the first chamber is discharged to the lower portion of the first chamber. delete The method according to claim 1,
Wherein the second processing solution is an SC1 solution. delete The method according to claim 1,
Wherein the process performed in the first chamber further comprises a cleaning and drying process,
Wherein the substrate processed in the first chamber is transferred to the second chamber before being completely dried. The method according to claim 1,
Wherein the first chamber and the second chamber are vertically disposed,
Wherein the transfer unit transfers the substrate between the first and second chambers. The method according to claim 1,
Wherein the first chamber and the second chamber are arranged in parallel left and right,
Wherein the transfer unit transfers the substrate between the first and second chambers. delete The method according to claim 1,
And a third chamber for performing a process of cleaning and drying the substrate,
Wherein the second chamber performs a liquid treatment process for supplying a second treatment liquid to the substrate,
Wherein the transfer unit is a transfer unit for transferring the substrate between the first, second and third chambers. A first liquid processing step of performing a process including an etching process or a PR strip process by supplying a first process liquid to a lower surface of the substrate with a substrate processing surface facing downward in a first chamber;
A substrate transfer step of transferring the first liquid-processed substrate from the first chamber to the second chamber and transferring the same;
And a second liquid processing step of supplying a second processing liquid to an upper surface of the substrate with the processing surface of the substrate facing upward in the second chamber with respect to the transferred substrate,
Wherein the first treatment liquid is a chemical solution capable of generating crystals during a liquid treatment step or a chemical solution capable of reacting with the second treatment liquid to generate crystals,
Wherein the first liquid processing step heats the upper surface of the substrate and discharges fumes generated in the first liquid processing to the lower portion of the first chamber. 11. The method of claim 10,
A cleaning step performed in the second chamber and
Further comprising: a substrate transfer step of transferring the substrate from the first chamber to the second chamber. 11. The method of claim 10,
A cleaning step performed in the third chamber and
Further comprising a substrate transfer step of transferring the substrate to the first chamber, the second chamber, and the third chamber. delete 11. The method of claim 10,
Wherein the liquid treatment process step performed in the first chamber includes an etching process,
Wherein the process performed in the second chamber includes any one of a PR strip, an SC1 process, or a pure cleaning process. 15. The method of claim 14,
The liquid processing step performed in the first chamber is a high temperature SPM etching step,
Wherein the substrate and the SPM are heated by a separate heating device in the first chamber. 12. The method of claim 11,
Further comprising cleaning and drying the substrate in the first chamber,
Wherein the substrate to be cleaned and dried in the first chamber is subjected to a substrate transfer step before the substrate is completely dried.
KR1020150101669A 2014-08-12 2015-07-17 Apparatus and method treating substrate for seperation process KR101919122B1 (en)

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KR20160019857A (en) 2016-02-22

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