CN105374714B - Technique divergence type substrate board treatment and processing method - Google Patents
Technique divergence type substrate board treatment and processing method Download PDFInfo
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- CN105374714B CN105374714B CN201510494732.5A CN201510494732A CN105374714B CN 105374714 B CN105374714 B CN 105374714B CN 201510494732 A CN201510494732 A CN 201510494732A CN 105374714 B CN105374714 B CN 105374714B
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- 238000000034 method Methods 0.000 title claims abstract description 152
- 239000000758 substrate Substances 0.000 title claims abstract description 146
- 238000011282 treatment Methods 0.000 title claims abstract description 64
- 238000003672 processing method Methods 0.000 title claims abstract description 14
- 238000012545 processing Methods 0.000 claims abstract description 107
- 239000007788 liquid Substances 0.000 claims abstract description 93
- 238000004140 cleaning Methods 0.000 claims abstract description 55
- 239000012530 fluid Substances 0.000 claims abstract description 34
- 238000002425 crystallisation Methods 0.000 claims description 22
- 230000008025 crystallization Effects 0.000 claims description 22
- 238000001035 drying Methods 0.000 claims description 22
- 238000005516 engineering process Methods 0.000 claims description 11
- 238000010438 heat treatment Methods 0.000 claims description 7
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims description 3
- 235000011007 phosphoric acid Nutrition 0.000 claims description 3
- 239000007791 liquid phase Substances 0.000 claims 2
- 239000004065 semiconductor Substances 0.000 abstract description 5
- 230000002401 inhibitory effect Effects 0.000 abstract description 3
- 239000000243 solution Substances 0.000 description 11
- 238000005530 etching Methods 0.000 description 9
- DDFHBQSCUXNBSA-UHFFFAOYSA-N 5-(5-carboxythiophen-2-yl)thiophene-2-carboxylic acid Chemical compound S1C(C(=O)O)=CC=C1C1=CC=C(C(O)=O)S1 DDFHBQSCUXNBSA-UHFFFAOYSA-N 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 238000010276 construction Methods 0.000 description 3
- 238000000926 separation method Methods 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- NLXLAEXVIDQMFP-UHFFFAOYSA-N Ammonia chloride Chemical compound [NH4+].[Cl-] NLXLAEXVIDQMFP-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 230000003628 erosive effect Effects 0.000 description 2
- 239000003517 fume Substances 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- XEMZLVDIUVCKGL-UHFFFAOYSA-N hydrogen peroxide;sulfuric acid Chemical compound OO.OS(O)(=O)=O XEMZLVDIUVCKGL-UHFFFAOYSA-N 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 235000019270 ammonium chloride Nutrition 0.000 description 1
- LDDQLRUQCUTJBB-UHFFFAOYSA-N ammonium fluoride Chemical compound [NH4+].[F-] LDDQLRUQCUTJBB-UHFFFAOYSA-N 0.000 description 1
- 235000011114 ammonium hydroxide Nutrition 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 230000003749 cleanliness Effects 0.000 description 1
- 238000012864 cross contamination Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000003344 environmental pollutant Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 238000011010 flushing procedure Methods 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 230000005764 inhibitory process Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 230000000670 limiting effect Effects 0.000 description 1
- 239000006210 lotion Substances 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000005416 organic matter Substances 0.000 description 1
- 150000002978 peroxides Chemical class 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 231100000719 pollutant Toxicity 0.000 description 1
- 239000002516 radical scavenger Substances 0.000 description 1
- 230000002829 reductive effect Effects 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 230000002000 scavenging effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000009987 spinning Methods 0.000 description 1
- 238000010025 steaming Methods 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Weting (AREA)
Abstract
The present invention relates to a kind of substrate board treatments and processing method of such as semiconductor wafer, it is related to a kind of liquid processing process and cleaning for detaching such as etch process in more detail, technique divergence type substrate board treatment and processing method so as to be performed in different chambers.In order to achieve the above objectives, process according to the invention divergence type substrate board treatment includes：First chamber, including and perform liquid processing process to the first treatment fluid of supply substrate；Second chamber, including and perform liquid processing process to the supply substrate second processing liquid；And transfer unit, the substrate is transferred between first and second described chamber, wherein, the first chamber is detached with the technique that second chamber performs, and is crystallized with inhibiting to generate in chamber.
Description
Technical field
The present invention relates to a kind of substrate board treatments and processing method of such as semiconductor wafer, are related to one in more detail
Kind detaches the technique that the liquid processing process of such as etch process is detached from cleaning and then can be performed in different chambers
Type substrate board treatment and processing method.
Background technology
In general, semiconductor element is, by the substrate to such as silicon wafer, such as photoetching process (photo is performed
Process), etch process (etching process), ion implantation technology (ion implantation process) and steaming
The various techniques such as depositing process (Deposition process) are formed.
Also, during each technique is performed, in order to remove the various pollutants for being attached to substrate, scavenger is performed
Skill.Cleaning includes：With the liquid treatment process of the polluter on liquid (chemical) removal substrate；Use pure water
The cleaning (wet cleaning process) of (pure water) removal remaining liquid on substrate；And supply is dry
Dry fluid removes the drying process (drying process) in the remaining pure water of substrate surface.
In more detail, in the manufacturing process of semiconductor element, etch process is in the process object for being formed in substrate
Etchant resist is formed on film in a predetermined pattern, using the etchant resist (resist film) as mask, the process object film is held
The processing such as row etching, ion implanting, and the etchant resist no longer needed is removed from substrate.
In order to which the processing substrate mode of above-mentioned technique can be substantially divided at dry type (Dry) processing mode and wet type (Wet)
Reason mode, wherein wet processed mode are divided into while handle the examination in batches of multiple substrates as the mode using various liquids
(batch type) device and single wafer (single wafer type) device that substrate is handled as unit of monolithic.
Examination processing unit is disposably to be impregnated in multiple substrates to contain the rinse bath of cleaning solution and make a return journey depollution in batches
Source.But the existing processing unit of examination in batches is not easily adaptable to the trend of substrate enlargement, and presence need to use much clear
The shortcomings that washing lotion.
Also, it in the case that substrate is by breakage in process in processing unit is tried in batches, influences whether in rinse bath
All substrates, therefore in the presence of the risk that can generate a large amount of unqualified substrate.
Examination wafer cleaning method disposably cleans multiple chips in batches, therefore scavenging period is short and has high disposal rate,
And then formation efficiency is high, but because of intersection (cross) pollution between chip, cleaning efficiency is caused to reduce, and because disposable
Multiple chips are handled, and then the process results after processing chip are uneven, and use a large amount of cleaning solution, so as to which there are expenses
The problem of high and induced environment pollutes.
On the contrary, single wafer wafer cleaning method is the method cleaned to single-chip using a small amount of cleaning solution, though
Right cleaning efficiency is low, but the cross contamination between non-wafer, and cleans single wafer every time, therefore in work with identical condition
Process results are uniform, and are cleaned in high cleanliness environment, therefore with cleaning efficiency (after chip processing) after skill
The advantages of high.
Especially, because of the heavy caliber of chip, the processing capacity for trying cleaning method in batches is limited, and to gradually highly integrated
Semiconductor element for cleaning efficiency become more important, therefore gradually increasing using single wafer cleaning method, and
It is being more prone to single wafer processing unit recently.
Single wafer processing unit as unit of individual substrate as in a manner of being handled, by treatment fluid and cleaning solution
Or dry gas is sprayed in high-speed rotating substrate surface, and then utilizes rotation mode (spinning method, because substrate revolves
The pressure that the injection of centrifugal force and cleaning solution turned generates makes a return journey depollution source) it is etched and cleans.
In general, single wafer processing unit includes：Accommodate the chamber that substrate performs cleaning；With the state of predetermined substrate
The rotating suction disc (Spin Chuck) rotated；And it is supplied for the cleaning solution of liquid, flushing liquor and dry gas etc. will to be included
It should be in the nozzle assembly of substrate.
That is, existing general single wafer device is, it is characterized in that, after substrate is inserted in chamber, make etching, clear
The above-mentioned process sequence such as technique is washed all to perform in a chamber.
SPM processing is often utilized, and SPM processing is will mix sulfuric acid and peroxide recently as the minimizing technology of etchant resist
(Sulfuric Acid Hydrogen Peroxide Mixture, sulfuric acid hydrogen peroxide mix the SPM of high temperature for changing hydrogen and obtaining
Close object), etchant resist is supplied in be handled.
In general, the feature of the situation of SPM techniques is to be carried out at SC1 (NH4OH/H2O2/H2O) after SPM processing
Science and engineering skill, is then dried, but SPM uses acid liquid, and SC1 is performed using alkaline liquid, therefore in a chamber
Crystallization can be generated during technique.
It is this that during the crystallization of generation Acid-Base, showing for blocking may be generated in exhaust portion or drain portion because crystallizing in chamber
As, and polluted caused by chamber interior crystallization is attached to substrate again, the problem of very serious can be become.
This on the bulk life time of substrate board treatment or maintenance, can become it is very negative will be because, especially substrate
The mortality that crystallization adheres to again as substrate earning rate is reduced will be because.
And then using including LAL BOE (the Low ammonium fluoride low such as including NH4F and HF
Surface tension Buffered oxide etchant, low fluorine low surface tension buffered oxide etchant) ammonium fluoride
Liquid when, crystallization can also be precipitated in the technique for only using the liquid.
In the case of this technique that may generate crystallization, influence whether other follow-up liquid processing process or cleaning and do
Drying process, and as described above, in single wafer device because crystallization can lead to the problem of it is various, it is therefore desirable to solve this ask
Topic.
Invention content
(solving the problems, such as)
The present invention allows for the problem of as described above and proposes, its purpose is to provide following technique divergence type bases
Plate processing unit and processing method：In existing single wafer type substrate processing unit, in order to overcome in liquid processing process
The problem of generation crystallization, separable technique is handled, so as to inhibit the generation of crystallization.
(means solved the problems, such as)
In order to reach the technical purpose, process according to the invention divergence type substrate board treatment, which is characterized in that packet
It includes：First chamber, including and perform the first treatment fluid be supplied in the liquid processing process of substrate；Second chamber, including and hold
It is about to the liquid processing process that second processing liquid is supplied in the substrate；And transfer unit, first and second described chamber it
Between transfer the substrate, detach the technique performed in the first chamber and second chamber, crystallized with inhibiting to generate in chamber.
Also, first treatment fluid is the liquid that crystallization can be generated in liquid processing process or first processing
Liquid generates the liquid of crystallization with second processing liquid to react to each other.
Therefore, first treatment fluid is the etching solution of executable etch process or the processing that can carry out PR lift-off processings
Liquid, the second processing liquid are SC1 solution.Specifically, first treatment fluid is to include in HF, LAL, SPM, H3PO4
A kind of liquid, the second processing liquid are the liquid for including SC1 solution.
Also, the first chamber may also include the heating unit heated the substrate.
And then the second chamber can also carry out drying process after cleaning is performed.
Also, the technique performed in the first chamber may also include cleaning and drying process, in the first chamber
The substrate of processing is shifted into the second chamber with the state before being completely dried.
Also, the first chamber and second chamber are configured up and down or the first chamber and second chamber or so are parallel
Ground is configured, and the transfer unit transfers the substrate between first and second described chamber.
And then the liquid processing process of the first chamber be for base lower surface liquid processing process, the shifting
It can be the overturning transfer unit for overturning the substrate between first and second described chamber to be transferred to send unit.This
When, first treatment fluid used is SPM or H3PO4, and the second processing liquid is SC1.
Also, may also include the third chamber for performing cleaning and the dry substrate, the transfer unit be first, the
The transfer unit of the substrate is transferred between two and third chamber.
Also, in order to reach above-mentioned technical purpose, process according to the invention divergence type substrate processing method using same includes：First
First treatment fluid is supplied in the substrate performed in first chamber by liquid processing steps；Base plate transfer step exists the substrate
The first chamber is transferred to second chamber；And second liquid processing step, second processing liquid is supplied in second chamber
The substrate that room performs, wherein, detach the work performed in first liquid processing steps and second liquid processing step
Skill is crystallized with inhibiting to generate in chamber.
(The effect of invention)
As described above, process according to the invention divergence type substrate board treatment and substrate processing method using same have as follows excellent
Point：By the liquid processing process of the substrate of such as etch process, such as substrate processing process of PR stripping technologies or cleaning and do
Drying process is performed in individual chamber, therefore compared to the skill in all techniques of existing single wafer type substrate processing unit processing
Art, having can prevent from polluting substrate when crystallizing because generating in chamber from source.
Also, it is also detached, is performed in respective chamber, therefore with other techniques using the technique for the treatment of fluid for including ammonium fluoride
Separation can generate the technique and other techniques of crystallization, and then substrate can be prevented to be crystallized pollution.
Also, the lower surface of substrate is handled in the first chamber, and inhibits the smog generated in liquid processing process
(fume) it is distributed to chamber interior top, if this smog is discharged to chamber lower portion, compared to existing liquid handling base
The technology of the upper surface of plate, being capable of holding chamber chamber interior environment, therefore can improve the cleannes of processing substrate more cleanly.
And then substrate is transplanted on second chamber in first chamber if being made of the overturning transfer unit that substrate may be reversed
Transfer unit then makes the process face of substrate towards top in second chamber, and then compared to existing way, cleaning is effectively performed
And it is dry, the earning rate of substrate can be improved.
Description of the drawings
Fig. 1 is the figure for the construction for schematically showing technique divergence type substrate board treatment according to an embodiment of the invention.
Fig. 2 be show in technique divergence type substrate board treatment according to an embodiment of the invention to form up and down first and
Second chamber and the exemplary diagram of separation SPM techniques and cleaning.
Fig. 3 be show in technique divergence type substrate board treatment according to an embodiment of the invention to form up and down first and
Second chamber and separation include the exemplary diagram of ammonium chloride treatment fluid (LAL) technique and other techniques.
Fig. 4 be show in technique divergence type substrate board treatment according to an embodiment of the invention it is horizontal form first and
The exemplary diagram of second chamber.
Fig. 5 is to include first, second and in technique divergence type substrate board treatment according to an embodiment of the invention
Three chambers and the exemplary diagram for detaching each technique and forming
Fig. 6 is handled for explanation in technique divergence type substrate processing method using same according to an embodiment of the invention
The figure of substrate processing process.
Main appended drawing reference explanation：
100：First chamber 200：Second chamber
300：Transfer unit 310：Overturn transfer unit
400：Heating unit 500：Third chamber
Specific embodiment
With that can specify advantages of the present invention, feature with reference to the embodiment being described in detail later together with attached drawing and reach method.Hereinafter,
It is described with reference to technique divergence type substrate board treatment and substrate processing method using same according to an embodiment of the invention.
With reference to Fig. 1, technique divergence type substrate board treatment according to an embodiment of the invention includes：First chamber 100, packet
It includes and performs the liquid processing process that the first treatment fluid is supplied in substrate；Second chamber 200, including and perform second processing
Liquid is supplied in the liquid processing process of the substrate；And transfer unit 300, between first and second described chamber 100,200
Transfer the substrate.
The first chamber 100 (is handled with second chamber 200 as with execution liquid processing process by first, second
Liquid is supplied in substrate) inner space inscape, can with existing single wafer type substrate processing unit provide chamber shape
State is provided.
Also, the first chamber 100 and second chamber 200 may include handling liquid supply unit respectively to perform substrate
Liquid processing process, and the technique performed in the first chamber 100 and second chamber 200 is detached, to inhibit in chamber
Generation crystallization.
Therefore, first treatment fluid can be at the liquid or described first that generation crystallizes in liquid processing process
It can be the liquid for reacting to each other and generating crystallization that liquid, which is managed, with second processing liquid.
With reference to Fig. 2, the first treatment fluid that substrate is supplied in the first chamber 100 can perform etch process
Etching solution or the treatment fluid that can carry out PR stripping technologies, the second processing liquid can be SC1 solution.
As described above, SPM treatment fluids are acidity, SC1 treatment fluids are alkalinity, therefore in the first chamber 100 and second
Chamber 200 performs the technique using aforesaid liquid respectively, so as to inhibit generation crystallization from source.
With reference to Fig. 3, using including such as LAL BOE (Low ammonium fluoride low surface tension
Buffered oxide etchant) (including H4F and HF) ammonium fluoride liquid when, itself may be precipitated crystallization, therefore will
This liquid divides into the first treatment fluid, and is performed in individual first chamber 100, other techniques second chamber 200 into
Row, therefore other techniques can be completely cut off with the influence caused by generating crystallization.
Also, the first chamber 100 may also include the heating unit 400 heated the substrate, at this moment in the first chamber
When 100 the first treatment fluids performed are SPM treatment fluids, the SPM treatment fluids for being supplied in substrate can be heated, therefore can be described first
Chamber 100 performs high temperature SPM etch process.
The heating unit 400 plays the role of improving temperature, in order to improve the erosion of the SPM treatment fluids of substrate and supply
Efficiency is carved, and can be variously-shaped heater or similar component.
And then cleaning and drying process are may also include in the technique that the first chamber 100 performs, in the first chamber
The substrate of processing can be transplanted on the second chamber with the state before being completely dried.
The first chamber 100 handles wet etch process, and wet etch process is commonly included in final cleaning and drying
Before step, organic matter or cleaning and the drying process of metal byproducts that first removal is generated in etch process.This wet
Cleaning and drying in formula etch process cannot remove all residues, and remaining residue is removed in final cleaning and drying process
Object.
Process according to the invention divergence type substrate board treatment is wet etch process and final cleaning and drying process
It is performed respectively in different chambers, if being completely dried substrate when being cleaned and dried for the first time in wet etch process,
Residue, which can be led to the problem of, can be bonded to substrate.
It is therefore preferable that being, substrate is not the state to be completely dried in the first chamber, but is transferred with the state of moistening
Carry out final cleaning step and drying steps to second chamber, this have the excellent of cleaning performance can be improved in second chamber
Point.
With reference to Fig. 2 to Fig. 3, the first chamber 100 and second chamber are configured about 200, and the transfer unit 300 can be with
It is the construction for mutually transferring the substrate up and down between first and second described chamber.
With reference to Fig. 4, the first chamber 100 and second chamber 200 or so are parallelly configured, the transfer unit 300
It can be the construction that the substrate is parallelly transferred between first and second described chamber.
The height production for the processing chamber that the configuration of this first chamber 100 and second chamber 200 is performed according to each chamber
Changing, therefore for the height for equably forming total system, preferably upper and lower or configured in parallel.
For example, compared to other processing cleanings and the chamber of drying process, the chamber of SPM techniques is handled with greater need for internal empty
Between, if forming the chamber of processing SPM techniques up and down, and individually form the chamber of processing cleaning and drying process up and down, then it is left
The height of right chamber is different, therefore the second of the first chamber for handling SPM techniques and processing cleaning and drying process is configured up and down
Chamber can make the high uniformity of whole chamber system.
And then the liquid processing process of the first chamber 100 is the liquid processing process for base lower surface, it is described
Transfer unit 300 can be the overturning transfer unit 310 that the substrate is transferred in overturning between first and second described chamber.
As described above, mainly performing wet etch process in the first chamber 100, etch process is because of its characteristic upper substrate
The special component meeting liquid to be treated removal on surface, thus can generate comparable smog (Fume), and then smog rises as pollution
The reason of chamber interior.
Therefore, if making this processing substrate downwards and being handled, smog rising is can inhibit, and if under chamber
Smog is discharged in portion, then compared to the existing way using upper surface as processing substrate face, can keep and manage more cleanly
Chamber interior.
On the contrary, the second chamber 200 mainly performs cleaning, cleaning is using upper surface as the processing of substrate
It is most effective when face starts the cleaning processing, it is therefore desirable to the substrate handled in first chamber 100 to be overturn, using upper surface as place
Reason face is inserted in second chamber 200.
Therefore, as the transfer unit 300, the overturning transfer unit 310 for providing upset substrate to transfer passes through first
Chamber 100 and second chamber 200 perform the etching of substrate and are cleaned and dried technique.
The present invention can be selected according to because of the first treatment fluid, such as generation smog liquid characteristic from following method for transporting
A kind of method：With the normal method for transporting of parallel state transfer substrate；The overturning transfer side transferred with upset substrate
Method.It is below table of the example according to the base plate transfer method for the treatment of fluid type of classifying.
【Table one】
According to the base plate transfer method for the treatment of fluid type
And then with reference to Fig. 5, the third chamber 500 for the technique for performing cleaning and the dry substrate is may also include, at this moment institute
It states second chamber 200 and performs the liquid processing process that second processing liquid is supplied in the substrate.
That is, the etching of the liquid processing process as the first treatment fluid of supply (such as SPM) is performed in first chamber 100
Technique, the second chamber 200 performs the liquid processing process of the second processing liquid of supply such as SC1, in addition in the third
Chamber 500 makes finally to clean and drying process is located away from other techniques to perform substrate processing process.
According to this composition, individual chamber is segmented, therefore between inhibition substrate processing process for each technique
Generation crystallization can improve the cleannes of substrate, and the advantages of substrate board treatment easy to maintain.
Hereinafter, technique divergence type base of the explanation using technique divergence type substrate board treatment according to an embodiment of the invention
Board processing method, which is characterized in that this method includes：First treatment fluid is supplied in the first chamber by the first liquid processing steps
The substrate of room processing；Second processing liquid is supplied in the substrate handled in second chamber by second liquid processing step.Institute
It states the first liquid processing steps to be detached with the technique that second liquid processing step performs, to inhibit to generate knot in chamber
It is brilliant.
Also, cleaning and the drying steps that the second chamber performs are additionally included in, in the first chamber main processing erosion
Carving technology or PR stripping technologies, can handle remaining liquid processing process and cleaning in second chamber, and by by institute
The base plate transfer step that substrate is transplanted on second chamber from the first chamber is stated, can perform whole substrate processing process.
And then it is included in the cleaning step performed in individual third chamber, it can mainly handle etching work in first chamber
Skill or PR stripping technologies can perform remaining liquid processing process in second chamber, and can be handled in third chamber final clear
Wash technique.
At this moment, the base plate transfer step may be configured as, by the base plate transfer to the first chamber, second chamber and
Third chamber.
With reference to Fig. 6, such as 10 step of etch process is handled in the first chamber, such as PR can be handled in second chamber
Except 20 or PR strippings 30 liquid processing steps or may also include final cleaning step 40, and final cleaning step can be in list
Only third chamber is handled.
Also, the following table of the first liquid processing steps processing substrate of the first treatment fluid is supplied in the first chamber
Face, the base plate transfer step are made of, and then executable above-mentioned etch cleaning the substrate overturning transfer step of upset substrate
Technique.
It, can in the first liquid processing steps that the first chamber performs in this technique divergence type substrate processing method using same
Including PR stripping technologies, the second liquid processing step performed in the second chamber includes SC1 treatment process.
Also, can be high temperature SPM etch process in the first liquid processing step that the first chamber performs, it is characterized in that
By individual heating devices heat substrate and SPM in the first chamber.
And then it is additionally included in cleaning and the drying steps of substrate in the first chamber, the quilt in the first chamber
Cleaning and the substrate being dried perform base plate transfer step with the state before being completely dried.
As described above, for etch process, it is necessary to carry out the cleaning of foreign substances that first removal is generated in etching
And it is dry, if at this moment substrate is completely dried, foreign substances are cured, and there are problems that finally cleaning is difficult.
It is therefore preferable that being, when being etched, clean and drying in etch process 10, substrate holding is not completely dried
State is come the technique 20,30,40 after being transplanted on.
More than, with reference to the accompanying drawings of the embodiment of the present invention, but have in the technical field of the invention and usually know
The technical staff of knowledge will be appreciated that：For do not change the present invention technological thought or essential feature in the case of, can be with other
Specific form is implemented.
Therefore, it is that example in all aspects is shown in the embodiment described above, and the non-limiting meaning, it is of the invention
Range is embodied by aforementioned claims, is also had and institute derived from its equivalent conception from the meaning and range of claims
The form for having altered or deforming should be construed to be included in the scope of the present invention.
Claims (9)
1. a kind of technique divergence type substrate board treatment, which is characterized in that including：
First chamber, including and perform make processing substrate down to the lower part of the substrate supply the first treatment fluid liquid at
Science and engineering skill；
Second chamber, including and perform make processing substrate up to the top of the substrate supply second processing liquid liquid at
Science and engineering skill；And
Transfer unit overturns the substrate of the first chamber to be transplanted on the second chamber；
Wherein, first treatment fluid be can be generated in liquid processing process crystallization liquid or with second processing liquid phase
Mutual reactance and the liquid for generating crystallization, the first chamber further include the heating unit for heating the substrate.
2. technique divergence type substrate board treatment according to claim 1, which is characterized in that
First treatment fluid is the solution that etch process or PR stripping technologies are performed to the substrate,
The second processing liquid is SC1 solution.
3. technique divergence type substrate board treatment according to claim 1, which is characterized in that
First treatment fluid is a kind of liquid being included in HF, LAL, SPM, H3PO4,
The second processing liquid is the liquid for including SC1 solution.
4. technique divergence type substrate board treatment according to claim 1, which is characterized in that
The second chamber also performs drying process after cleaning is performed.
5. technique divergence type substrate board treatment according to claim 1, which is characterized in that
The technique performed in the first chamber further includes cleaning and drying process,
The second chamber is shifted into the state before being completely dried in the substrate of first chamber processing.
6. technique divergence type substrate board treatment according to claim 1, which is characterized in that
The first chamber and second chamber are configured up and down,
The transfer unit transfers the substrate between the first chamber and second chamber.
7. technique divergence type substrate board treatment according to claim 1, which is characterized in that
The first chamber and second chamber or so are parallelly configured,
The transfer unit transfers the substrate between the first chamber and second chamber.
8. technique divergence type substrate board treatment according to claim 1, which is characterized in that further include execution cleaning and do
The third chamber of the dry substrate,
The transfer unit is the transfer unit that the substrate is transferred between first chamber, second chamber and third chamber.
9. a kind of technique divergence type substrate processing method using same utilizes the technique divergence type substrate board treatment of claim 1, feature
It is, including：
The first treatment fluid is supplied in first liquid processing steps, the substrate lower part handled to first chamber；
The substrate from the first chamber is overturn and is transferred to the second chamber by base plate transfer step；And
Second processing liquid is supplied on second liquid processing step, the substrate top handled to the second chamber,
Wherein, first treatment fluid be can be generated in liquid processing process crystallization liquid or with second processing liquid phase
Mutual reactance and the liquid for generating crystallization.
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| KR10-2014-0104586 | 2014-08-12 | ||
| KR20140104586 | 2014-08-12 |
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| JP (1) | JP6275090B2 (en) |
| KR (1) | KR101919122B1 (en) |
| CN (1) | CN105374714B (en) |
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| CN108251895A (en) * | 2016-12-29 | 2018-07-06 | 江苏鲁汶仪器有限公司 | A kind of hydrogen fluoride gaseous corrosion device and method |
| CN108649008A (en) * | 2018-07-05 | 2018-10-12 | 睿力集成电路有限公司 | One chip cleaning device and method for wafer cleaning after ion implanting |
| TWI761152B (en) * | 2021-03-25 | 2022-04-11 | 聯策科技股份有限公司 | Substrate processing equipment |
| US11940734B2 (en) | 2022-04-21 | 2024-03-26 | Semes Co., Ltd. | Apparatus and method for treating substrate |
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| TWI612602B (en) | 2018-01-21 |
| CN105374714A (en) | 2016-03-02 |
| TW201606914A (en) | 2016-02-16 |
| KR20160019857A (en) | 2016-02-22 |
| JP6275090B2 (en) | 2018-02-07 |
| WO2017014416A1 (en) | 2017-01-26 |
| KR101919122B1 (en) | 2018-11-15 |
| JP2016040826A (en) | 2016-03-24 |
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