TWI612602B - Apparatus and method treating substrate for seperation process - Google Patents

Abstract

The present invention relates to a substrate processing apparatus and processing method such as a semiconductor wafer, and more particularly to a process separation type substrate processing apparatus and processing method for separating a liquid processing process and a cleaning process such as an etching process, thereby performing in different chambers . In order to achieve the above object, a process separation type substrate processing apparatus according to the present invention includes: a first chamber containing and executing a liquid processing process for supplying a first processing liquid to a substrate; and a second chamber containing and performing a second supply to the substrate a liquid processing process of the treatment liquid; and a transfer unit that transfers the substrate between the first chamber and the second chamber, wherein the first chamber is separated from the process performed by the second chamber to inhibit Crystallization occurs in the chamber.

Description

Process separation type substrate processing device and processing method

The present invention relates to a substrate processing apparatus and processing method such as a semiconductor wafer, and more particularly to a process separation type substrate processing apparatus which separates a liquid processing process such as an etching process from a cleaning process, and can be executed in different chambers. Approach.

In general, a semiconductor element is subjected to various processes such as a photo process, an etching process, an ion implantation process, and a deposition process through a substrate such as a germanium wafer. And formed.

Also, in the process of performing each process, a cleaning process is performed in order to remove various contaminants attached to the substrate. The cleaning process includes: a chemical treatment process for removing contaminants on the substrate by chemical; a wet cleaning process for removing the residual liquid on the substrate with pure water; and supplying a drying fluid to A drying process for removing pure water remaining on the surface of the substrate.

In more detail, in the manufacturing process of the semiconductor device, the etching process is to form a resist film in a predetermined pattern on the processed object film formed on the substrate, and the resist film is used as a mask. The processing object film performs etching, ion implantation, and the like, and removes a resist film that is no longer needed from the substrate.

The substrate processing method of the above process can be roughly divided into a dry (Dry) processing method and a wet (Wet) processing method, wherein the wet processing method is divided into a batch type in which a plurality of substrates are simultaneously processed as a method of using various chemical liquids ( Batch type) A device and a single wafer type device that processes a substrate in units of a single piece.

In the batch type processing apparatus, a plurality of substrates are once immersed in a cleaning tank containing a cleaning liquid to remove a source of contamination. However, existing batch processing devices are not easy to adapt to large substrates. The trend of modeling, and the disadvantages of using a lot of cleaning fluid.

Moreover, in the batch type processing apparatus, the substrate is damaged during the process. Underneath, all the substrates in the cleaning tank are affected, so there is a risk that a large number of defective substrates may be generated.

Batch wafer cleaning method cleans multiple wafers at once, so cleaning time is short Moreover, it has a high processing rate, and the production efficiency is high, but the cleaning efficiency is lowered due to cross contamination between the wafers, and the process results after processing the wafer are uneven due to uneven processing of the plurality of wafers at one time, and use A large amount of cleaning liquid has a problem of high cost and environmental pollution.

Conversely, the single wafer wafer cleaning method uses a small amount of cleaning solution for a single wafer. For the cleaning method, although the cleaning efficiency is low, there is no cross-contamination between the wafers, and the individual wafers are cleaned each time under the same conditions, so that the process results after the process (after the wafer processing) are uniform, and the cleaning is high. The environment is cleaned, so it has the advantage of high cleaning efficiency.

In particular, due to the large diameter of the wafer, the processing power of the batch cleaning method is However, cleaning efficiency has become more important for semiconductor elements that are gradually becoming highly integrated, and thus the use of single-wafer cleaning methods is gradually increasing, and more recently, single-wafer processing apparatuses have been favored.

The single-wafer type processing apparatus is a unit that processes in units of a single substrate. In the formula, the treatment liquid, the cleaning liquid, or the drying gas are sprayed onto the surface of the substrate that rotates at a high speed, and the etching method is performed by a spinning method (a centrifugal force generated by the rotation of the substrate and a pressure generated by the ejection of the cleaning liquid to remove the source of contamination).

Generally, a single-wafer processing apparatus includes: a chamber that houses a substrate to perform a cleaning process a spin chuck that rotates in a state of a predetermined substrate; and a nozzle assembly for supplying a cleaning liquid containing a chemical liquid, a rinse liquid, a dry gas, and the like to the substrate.

That is, the conventional general single-wafer device is characterized in that the substrate is inserted into the cavity. After the chamber, the above-described series of processes such as etching and cleaning processes are all performed in one chamber.

Recently, as a method of removing a resist film, SPM (Sulfuric Acid) is often used. Hydrogen Peroxide Mixture, a mixture of sulfuric acid hydrogen peroxide), and SPM treatment is to supply high temperature SPM obtained by mixing sulfuric acid and hydrogen peroxide to a resist film for processing.

In general, the SPM process is characterized by an SC1 (NH ₄ OH/H ₂ O ₂ /H ₂ O) process after SPM processing, followed by drying, but SPM uses an acidic solution, while SC1 uses an alkaline solution. The liquid medicine, so crystals are generated when the process is performed in one chamber.

When this acid-salt crystal is generated in the chamber, it may be in the exhaust or drain due to crystallization. A clogging phenomenon occurs on the part, and contamination due to crystallization of the inside of the chamber and adhesion to the substrate may become a very serious problem.

This may become very negative in the overall life or maintenance of the substrate processing apparatus. The important factor, especially the crystallization of the substrate, is a fatal factor that reduces the yield of the substrate.

Further, when a chemical solution containing ammonium fluoride such as LAL BOE (Low ammonium fluoride low surface tension buffered oxide etchant) including NH ₄ F and HF is used, only the liquid is used. Crystallization can also be precipitated in the process.

Such a process which may cause crystallization may affect subsequent liquid processing processes or cleaning and drying processes, and as described above, various problems may arise due to crystallization in a single-wafer device, and thus it is necessary to solve such a problem.

The present invention has been made in view of the above problems, and an object thereof is to provide a process separation type substrate processing apparatus and a processing method in which a conventional single wafer type substrate processing apparatus is used to overcome crystallization during a liquid processing process. The problem can be separated by a process to be processed so as to inhibit the generation of crystals.

In order to achieve the above technical object, a process separation type substrate processing apparatus according to the present invention includes: a first chamber including and executing a liquid processing process for supplying a first processing liquid to a substrate; and a second chamber, And a liquid processing process for supplying a second processing liquid to the substrate; and a transfer unit that transfers the substrate between the first chamber and the second chamber, separating the first chamber and the second The process performed by the chamber to inhibit crystallization in the chamber.

Further, the first treatment liquid is a chemical liquid which can generate crystals during the liquid treatment process, or the first treatment liquid and the second treatment liquid react with each other to generate crystals.

Therefore, the first processing liquid is an etching solution capable of performing an etching process or a processing liquid capable of performing PR stripping treatment, and the second processing liquid is an SC1 solution. Specifically, the first treatment liquid is one of HF, LAL, SPM, and H ₃ PO ₄ , and the second treatment liquid is a chemical solution including the SC1 solution.

Also, the first chamber may further include a heating unit that heats the substrate.

Further, the second chamber may further perform a drying process after performing the cleaning process.

Also, the process performed in the first chamber may further include a cleaning and drying process in which the substrate processed by the first chamber is transferred to the second chamber in a state before being completely dried.

And the first chamber and the chamber are arranged up and down, or the first chamber and the second chamber are arranged in parallel to each other, and the transfer unit transfers the between the first chamber and the second chamber Substrate.

Further, the liquid processing process of the first chamber is a liquid processing process for the lower surface of the substrate, and the transfer unit may be a transfer unit that flips the substrate between the first chamber and the second chamber for transfer. . At this time, the first treatment liquid used is SPM or H3PO4, and the second treatment liquid is SC1.

Also, a third chamber for performing cleaning and drying of the substrate may be included, the transfer unit being a transfer unit that transfers the substrate between the first, second, and third chambers.

Moreover, in order to achieve the above technical object, a process separation type substrate processing method according to the present invention includes: a first liquid processing step of supplying a first processing liquid to a substrate performed in a first chamber; and a substrate transfer step of the substrate The first chamber is transferred to the second chamber; and a second liquid processing step is to supply the second processing liquid to the substrate executed in the second chamber, wherein the first liquid processing step is separated from the first The process performed in the two liquid processing steps to inhibit crystallization in the chamber.

As described above, the process separation type substrate processing apparatus and the substrate processing method according to the present invention have the advantages of a liquid processing process of a substrate such as an etching process, a substrate processing process such as a PR peeling process, or a cleaning and drying process in separate The chamber is executed, so that it is possible to prevent the substrate from being contaminated by crystallization in the chamber from the source as compared with the prior art single-wafer substrate processing apparatus for processing all processes.

Moreover, the process of using the treatment liquid including ammonium fluoride is also separated from other processes and performed in the respective chambers, so that the separation process can produce crystallization and other processes, thereby preventing the base. The board is contaminated with crystals.

And, the lower surface of the substrate is processed in the first chamber, and the smoke generated during the liquid processing process is suppressed from being emitted to the upper portion of the chamber, and if the smoke is discharged to the lower portion of the chamber, the existing liquid is Compared with the technique of processing the upper surface of the substrate, the environment inside the chamber can be more cleanly maintained, so that the cleanliness of the substrate processing can be improved.

Further, when the transfer unit that transfers the substrate to the second chamber is configured by the transfer unit of the reversible substrate, the processing surface of the substrate is directed to the upper portion in the second chamber, and the conventional method is The ratio can be effectively cleaned and dried to increase the yield of the substrate.

100‧‧‧ first chamber

200‧‧‧Second chamber

300‧‧‧Transfer unit

310‧‧‧Transfer unit

400‧‧‧heating unit

500‧‧‧ third chamber

10‧‧‧ etching process (step)

20‧‧‧ashing (removing PR) (step)

30‧‧‧PR stripping (step)

40‧‧‧Final cleaning (steps)

1 is a structural view schematically showing a process separation type substrate processing apparatus according to an embodiment of the present invention; and FIG. 2 is a view showing a process separation type substrate processing apparatus according to an embodiment of the present invention, which constitutes a first cavity up and down Schematic diagram of the chamber and the second chamber and separating the SPM process and the cleaning process; FIG. 3 is a view showing the process of separating the first and second chambers and separating the chlorine in the process separation type substrate processing apparatus according to an embodiment of the invention. Schematic diagram of an ammonium chloride treatment liquid (LAL) process and other processes; FIG. 4 is a schematic view showing a first chamber and a second chamber horizontally formed in a process separation type substrate processing apparatus according to an embodiment of the present invention; 5 is a schematic view showing the process of including the first, second, and third chambers and separating the respective processes in the process separation type substrate processing apparatus according to an embodiment of the present invention; and FIG. 6 is a view for explaining A substrate processing flowchart for performing processing in a process separation type substrate processing method according to an embodiment of the present invention.

Advantages, features, and methods of accomplishing the present invention will be apparent from the following detailed description of the embodiments. Hereinafter, a process separation type substrate processing apparatus and a substrate processing method according to an embodiment of the present invention will be described with reference to the accompanying drawings.

Referring to FIG. 1 , a process separation type substrate processing apparatus according to an embodiment of the present invention includes: a first chamber 100 including and executing a liquid processing process for supplying a first processing liquid to a substrate; and a second chamber 200 including A liquid processing process for supplying the second processing liquid to the substrate is performed; and the transfer unit 300 transfers the substrate between the first chamber 100 and the second chamber 200.

The first chamber 100 and the second chamber 200 are constituent elements having an internal space for performing a liquid processing process (the first processing liquid and the second processing liquid are supplied to the substrate), and can be provided by a conventional single-wafer substrate processing apparatus. The chamber morphology is provided.

Also, the first chamber 100 and the second chamber 200 may respectively include a processing liquid supply device to perform a liquid processing process of the substrate, and separate processes performed in the first chamber 100 and the second chamber 200 to suppress the cavity Crystallization occurs indoors.

Therefore, the first treatment liquid may be a chemical liquid which generates crystallization during the liquid treatment process, or the first treatment liquid and the second treatment liquid may be mutually reacted to produce a crystallized chemical liquid.

Referring to FIG. 2, the first processing liquid supplied to the substrate in the first chamber 100 may be an etching solution for performing an etching process or a processing liquid capable of performing a PR stripping process, and the second processing liquid may be an SC1 solution.

As described above, since the SPM treatment liquid is acidic and the SC1 treatment liquid is alkaline, the processes for using the liquid are performed in the first chamber 100 and the second chamber 200, respectively, so that crystallization can be suppressed from the source.

Referring to Fig. 3, when an ammonium fluoride solution such as LAL BOE (Low ammonium fluoride low surface tension Buffered oxide etchant) (including H ₄ F and HF) is used, it may precipitate crystals by itself, so the liquid is distinguished. It is the first treatment liquid and is performed in the separate first chamber 100, and the other processes are performed in the second chamber 200, so that the influence of crystallization can be isolated for other processes.

Moreover, the first chamber 100 may further include a heating unit 400 that heats the substrate. When the first processing liquid executed by the first chamber 100 is an SPM processing liquid, the SPM processing liquid supplied to the substrate may be heated, so A chamber 100 performs a high temperature SPM etch process.

The heating unit 400 generates an effect of increasing the temperature so that the etching efficiency of the substrate and the supplied SPM processing liquid can be improved, and can be heaters of various shapes or members similar thereto.

Further, the process performed in the first chamber 100 may further include cleaning and drying The substrate processed in the first chamber can be transferred to the second chamber in a state before it is completely dried.

The first chamber 100 processes the wet etching process, and the wet etching process is generally included in Prior to the final cleaning and drying steps, the cleaning and drying process of the organic or metal by-products produced during the etching process is removed for the first time. Cleaning and drying in this wet etching process does not remove all residue and removes residual residue during the final cleaning and drying process.

The process separation type substrate processing apparatus according to the present invention is a wet etching process and The final cleaning and drying processes are performed in different chambers. If the substrate is completely dried during the initial cleaning and drying in the wet etching process, there is a possibility that the residue will adhere to the substrate.

Therefore, it is preferred that the substrate is not completely dried in the first chamber, and The final cleaning step and drying step are carried out in a wet state to the second chamber, which has the advantage that the cleaning effect can be improved in the second chamber.

Referring to FIGS. 2 and 3, the first chamber 100 and the second chamber 200 are arranged one above the other. The transfer unit 300 may be configured to transfer the substrates up and down between the first chamber and the second chamber.

Referring to FIG. 4, the first chamber 100 and the second chamber 200 are arranged side by side in parallel, The transfer unit 300 may also be a configuration in which the substrate is transferred in parallel between the first chamber and the second chamber.

The configuration of the first chamber 100 and the second chamber 200 is performed according to each chamber The process, the height of the chamber changes, so in order to uniformly form the height of the overall system, it is preferably arranged up and down or in parallel.

For example, handling SPM compared to other chambers that handle cleaning and drying processes The chamber of the process further requires an internal space. If the chambers for processing the SPM process are formed up and down, and the chambers for processing the cleaning and drying processes are separately formed up and down, the heights of the left and right chambers are different, so the first step of the SPM process is disposed. The chamber and the second chamber that handles the cleaning and drying process provide a uniform height of the overall chamber system.

Further, the liquid processing process of the first chamber 100 is a liquid for the lower surface of the substrate The body processing process, the transfer unit 300 may be a transfer transfer unit 310 that transfers the substrate between the first chamber and the second chamber.

As described above, the wet etching process is mainly performed in the first chamber 100, and the etching process is performed. Due to its characteristics, the specific components on the surface of the upper substrate are removed by the treatment liquid, thereby generating a considerable amount of smoke, and the smoke rises to become a cause of contamination inside the chamber.

Therefore, if such a substrate treatment is faced downward and processed, smoke rise can be suppressed, and if the smoke is discharged to the lower portion of the chamber, it can be more cleanly held than the conventional method in which the upper surface is used as the substrate processing surface. Manage the interior of the chamber.

Conversely, the second chamber 200 mainly performs a cleaning process which is most effective when the upper surface is treated as a processing surface of the substrate, and therefore it is necessary to invert the substrate processed in the first chamber 100 to have the upper surface as The processing surface is inserted into the second chamber 200.

Therefore, as the transfer unit 300, the transfer transfer unit 310 that reverses the substrate transfer is provided, and the etching and cleaning and drying processes of the substrate are performed by the first chamber 100 and the second chamber 200.

According to the present invention, a method of selecting a transfer method in which a substrate is transferred in a parallel state and a transfer method in which a substrate is transferred by a reverse substrate can be selected according to a characteristic of a first treatment liquid such as a liquid medicine for generating smoke. Table 1 below is a classification example of a substrate transfer method depending on the type of the treatment liquid.

Further, referring to FIG. 5, a third chamber 500 for performing a process of cleaning and drying the substrate may be further included, at which time the second chamber 200 performs a liquid processing process for supplying the second processing liquid to the substrate.

That is, an etching process as a liquid processing process for supplying a first processing liquid (such as SPM) is performed in the first chamber 100, and the second chamber 200 performs a liquid processing process of supplying a second processing liquid such as SC1, in addition to The three chambers 500 separate the final cleaning and drying process from other processes to perform the substrate processing process.

According to this configuration, the individual chambers are subdivided for each process, thereby suppressing generation of crystallization between the substrate processing processes, improving the cleanliness of the substrate, and facilitating maintenance of the substrate. The advantages of the processing device.

The following description utilizes a process separation type substrate processing according to an embodiment of the present invention. A process separation substrate processing method of a device, comprising: a first liquid processing step of supplying a first processing liquid to a substrate processed in a first chamber; and a second liquid processing step of applying a second processing liquid A substrate is supplied to be processed in the second chamber. The process performed in the first liquid processing step and the second liquid processing step is separated to suppress generation of crystallization in the chamber.

And further comprising a cleaning and drying step performed in the second chamber, in the first chamber The chamber mainly processes an etching process or a PR stripping process, and the remaining liquid processing process and the cleaning process can be processed in the second chamber, and the whole substrate can be transferred by transferring the substrate from the first chamber to the second chamber. Substrate processing process.

Further, the cleaning step performed in the separate third chamber may be first The chamber primarily processes the etching process or the PR stripping process, the remaining liquid processing process can be performed in the second chamber, and the final cleaning process can be processed in the third chamber.

At this time, the substrate transfer step may be configured to transfer the substrate to the first chamber, Two chambers and a third chamber.

Referring to FIG. 6, for example, an etching process is processed in the first chamber (step 10), A liquid treatment step such as PR removal (step 20) or PR stripping (step 30) may be processed in the second chamber, or may also include a final cleaning (step 40), and the final cleaning step may be performed in a separate third chamber deal with.

And, at the first liquid processing step of supplying the first treatment liquid in the first chamber The lower surface of the substrate is transferred from the substrate transfer step of the flip substrate, and the etching cleaning process described above can be performed.

In the process separation type substrate processing method, the first performed in the first chamber The liquid processing step can include a PR stripping process, and the second liquid processing step performed in the second chamber includes an SC1 processing process.

Also, the first liquid processing step performed in the first chamber may be a high temperature SPM etching process characterized by heating the substrate and SPM by a separate heating device in the first chamber.

Further, a cleaning and drying step of the substrate in the first chamber is further included, and the substrate to be cleaned and dried in the first chamber is subjected to a substrate transfer step in a state before being completely dried.

As described above, in the etching process, it is necessary to perform the first cleaning and drying of the foreign matter generated during the etching. In this case, if the substrate is completely dried, the foreign matter is solidified, and there is a problem that final cleaning is difficult.

Therefore, it is preferable that the substrate is left in an incompletely dried state and transferred to a subsequent process (steps 20, 30, 40) when etching, cleaning, and drying are performed in the etching process (step 10).

The embodiments of the present invention have been described above with reference to the drawings, but those having ordinary knowledge in the technical field to which the present invention pertains will be able to implement other specific forms without changing the technical idea or essential features of the present invention. .

Therefore, the above-described embodiments are not intended to limit the scope of the invention, and the scope of the invention is expressed by the scope of the patent application, and all the changes derived from the equivalent concept Or the form of the deformation should be construed as being included in the scope of the present invention.

100‧‧‧ first chamber

200‧‧‧Second chamber

300‧‧‧Transfer unit

310‧‧‧Transfer unit

400‧‧‧heating unit

Claims (10)

A process separation type substrate processing apparatus comprising: a first chamber containing and performing a liquid processing process for supplying a first processing liquid to a lower surface of the substrate; and a second chamber containing and performing a second supply to the upper surface of the substrate a liquid processing process of the treatment liquid; and a transfer unit that transfers and inverts the substrate between the first chamber and the second chamber; wherein the first treatment liquid is a liquid medicine capable of generating crystallization during a liquid treatment process Or a chemical solution that reacts with the second treatment liquid to produce crystals. The process-separated substrate processing apparatus according to claim 1, wherein the first processing liquid is an etching solution capable of performing an etching process on the substrate or a processing liquid subjected to a PR peeling treatment, and the second processing liquid is SC1. Solution. The process-separated substrate processing apparatus according to the first aspect of the invention, wherein the first processing liquid is a chemical liquid included in one of HF, LAL, SPM, and H ₃ PO ₄ , and the second processing liquid is A solution containing the SC1 solution. The process separation type substrate processing apparatus according to claim 2, wherein the first chamber further comprises a heating unit that heats an upper surface of the substrate. The process-separated substrate processing apparatus according to the first aspect of the invention, wherein the second chamber further performs a drying process after performing the cleaning process. The process-separated substrate processing apparatus of claim 1, wherein the process performed in the first chamber further comprises a cleaning and drying process before the substrate processed in the first chamber is completely dried. The state is transferred to the second chamber. The process separation type substrate processing apparatus according to claim 1, wherein the first chamber and the second chamber are disposed up and down, and the transfer unit is between the first chamber and the second chamber The substrate is transferred. The process-separated substrate processing apparatus according to claim 1, wherein the first chamber and the second chamber are disposed in parallel to each other, and the transfer unit is in the first chamber and the second chamber. The substrate is transferred between. The process-separated substrate processing apparatus according to claim 1, further comprising a third chamber for performing cleaning and drying of the substrate, wherein the transfer unit is in the first chamber and the second chamber The transfer unit of the substrate is transferred between the third chambers. A process separation substrate processing method comprising: a first liquid processing step of supplying a first processing liquid to a lower surface of a substrate processed by the first chamber; a substrate transfer step of inverting and transferring the substrate from the first chamber to a second chamber; and a second liquid processing step of supplying a second treatment liquid to the upper surface of the substrate processed by the second chamber, wherein the first treatment liquid is a liquid medicine capable of generating crystallization during the liquid treatment process Or a chemical solution that reacts with the second treatment liquid to produce crystals.