CN105977187A - Wet-method-based cleaning apparatus for optical waveguide wafer production and cleaning method thereof - Google Patents
Wet-method-based cleaning apparatus for optical waveguide wafer production and cleaning method thereof Download PDFInfo
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- CN105977187A CN105977187A CN201610366976.XA CN201610366976A CN105977187A CN 105977187 A CN105977187 A CN 105977187A CN 201610366976 A CN201610366976 A CN 201610366976A CN 105977187 A CN105977187 A CN 105977187A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67023—Apparatus for fluid treatment for general liquid treatment, e.g. etching followed by cleaning
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02052—Wet cleaning only
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Abstract
The invention relates to wafer production field, particularly to a wet-method-based cleaning apparatus for optical waveguide wafer production and a cleaning method thereof. The apparatus comprises an equipment frame; and crystal boat racks are arranged at the left end and the right end of the equipment frame. An HPM washing tank, an SPM washing tank, a plurality of DI washing tanks, a photoetching washing tank, a wafer photoresist washing tank, a BOE washing tank, a hard mask washing tank, and a transport robot are arranged in the equipment frame; the HPM washing tank, the SPM washing tank, the DI washing tanks, the photoetching washing tank, the wafer photoresist washing tank, the BOE washing tank, and the hard mask washing tank are provided with automatic timing devices; and the HPM washing tank, the SPM washing tank, the wafer photoresist washing tank, and the hard mask washing tank are provided with automatic heating devices and constant-temperature devices. With the wet-method-based cleaning apparatus, automatic wafer cleaning can be realized; and with the cleaning method, the cleaning effect is improved.
Description
Technical field
The present invention relates to wafer production field, particularly relate to a kind of for fiber waveguide wafer production
Wet-cleaning device and cleaning method thereof.
Background technology
Fiber waveguide device is the key core device in optical fiber telecommunications system, for lightwave signal
Transmission, optical signal distribute/close ripple, filter, switch etc., typical device has planar optical waveguide branch
Device, array waveguide grating, optical waveguide filter, photoswitch, optical attenuator etc..Fiber waveguide is brilliant
Circle is the front road technique of fiber waveguide device, has had wafer just can be packaged into device.Fiber waveguide wafer
It is the optics using Planar Lightwave Circuit Technology (PLC, Planar Lightwave Circuit) to manufacture
Wafer, becomes chip after cutting, end surface grinding polishing, is then packaged as fiber waveguide device.
The characteristic size of fiber waveguide wafer is 3～5 μm, although in wafer manufacturing process, photoetching is
Completing in hundred grades of environment, other techniques are to complete in thousand grades of environment, but still can cause
Grain sticks to crystal column surface；On the other hand, during deposition or etching, cavity wall is sticked to
Material also can be sticked to crystal column surface by ion bom bardment；In test process, unavoidably
Contact with other objects, and then adhere to some granules.These granules belong to pollutant, must
Must wash.If this granule just sticks on optical wave wire, optical waveguide loop can be caused
Interrupt；If falling on optical wave wire limit, after having deposited, the region of granule is had to move back at high temperature
It is easily formed bigger residual stress after fire, according to photoelastic effect, big Polarization Dependent Loss can be caused.
It is therefore desirable to granule is removed by wet-cleaning, to ensure the cleaning of crystal column surface.
Furthermore, in fiber waveguide wafer manufacturing process, the removing of photoresist, can use etc. from
The mode of son removes, but cost is high, can carry out chemistry removing in the way of using wet-cleaning,
Simply, fast, efficiency is high.The removing of hard mask layer, uses wet-cleaning chemistry to remove.With
And after optical waveguide core layer has etched, the engraving of fiber waveguide sidewall residual, wet method can be passed through
Clean chemistry to remove.
See Fig. 1, need during manufacturing fiber waveguide wafer to substrate, post-depositional process wafer,
Process wafer after etching and the process wafer after test carry out Chemical cleaning, with remove substrate,
The materials such as granule, etch residue and photoresist on process crystal column surface.At fiber waveguide wafer
At least needing 6 steps to clean in manufacture process, need multiple stage cleaning equipment, every cleaning equipment is also
Needing to be equipped with operator, wafer is transported often, route is long, easily causes secondary pollution.
Although according to the cleaning way in Fig. 1 can by the granule of crystal column surface, Organic substance, metal with
And native oxide removes, but process is complicated, and chemical substance used is many.And RCA standard is clear
Chemical reagent highly volatile in heating process used in washing method, produces strong irritating
Abnormal smells from the patient, so the highest to requirement of shelter, the most easily cause operator uncomfortable, or draw
Play the corrosion of other boards in this environment.
Summary of the invention
(1) to solve the technical problem that
The technical problem to be solved in the present invention there is provided a kind of wet for fiber waveguide wafer production
Method cleans device and cleaning method thereof, and in fiber waveguide wafer production process, this wet-cleaning fills
Put the automatization that can realize wafer cleaning, save time, equipment, fund and operator,
Improve production efficiency, reduce secondary pollution；The cleaning that its cleaning method is comprised carries
High cleaning performance, reduces production cost.
(2) technical scheme
In order to solve above-mentioned technical problem, the invention provides a kind of for fiber waveguide wafer production
Wet-cleaning device, it includes that device framework, two ends, described device framework left and right are equipped with crystalline substance
Boat frame, described cassette frame is used for holding wafer, be provided with in described device framework HPM rinse bath,
SPM rinse bath, multiple DI rinse bath, photolithography plate rinse bath, wafer photolithography glue rinse bath,
BOE rinse bath, hard mask rinse bath, transport robot and computer；At described computer
Control under, the wafer on described cassette frame is transported to that above-mentioned each is clear by described transport robot
Washing trough.
Preferably, it is respectively equipped with HPM cleanout fluid in described HPM rinse bath and SPM rinse bath
With SPM cleanout fluid, in the plurality of DI rinse bath, it is equipped with deionized water, described photolithography plate
It is equipped with stripper in rinse bath and wafer photolithography glue rinse bath, is provided with in described BOE rinse bath
Silicon dioxide etching liquid, is provided with metal cleaner, described photolithography plate in described hard mask rinse bath
Rinse bath is for washing away the residue on photolithography plate, and remaining each described rinse bath is used to wash away
Residue on crystal column surface.
Preferably, described HPM rinse bath, SPM rinse bath, multiple DI rinse bath, photoetching
Plate rinse bath, wafer photolithography glue rinse bath, BOE rinse bath and hard mask rinse bath are equipped with certainly
Dynamic timing means, and described HPM rinse bath, SPM rinse bath, wafer photolithography glue rinse bath
It is equipped with automatic heating device and thermostat with hard mask rinse bath, described automatic timer,
Automatic heating device and thermostat are all automatically controlled by a computer, and described automatic timer is used
In setting the time cleaned, described automatic heating device and thermostat for while cleaning
For corresponding rinse bath heat supply；
Preferably, clear by this BOE rinse bath of the automatic timer of described BOE rinse bath
The time of washing is set as 5～60sec, and the automatic timer of remaining each described rinse bath is all by corresponding
The scavenging period of rinse bath is set as 5～20min.
Preferably, the automatic heating device of described SPM rinse bath and thermostat are by cleaning temperature
Maintaining 80～100 °, described HPM rinse bath, wafer photolithography glue rinse bath and hard mask are clear
Washing trough is equipped with automatic heating device and thermostat and cleaning temperature maintains 60～80 °.
Preferably, the quantity of described DI rinse bath is four.
Preferably, described device framework includes the first framework and the second framework；
Described photolithography plate rinse bath, wafer photolithography glue rinse bath, BOE rinse bath and two institutes
Stating DI rinse bath and may be contained within described first framework, two described DI rinse baths are respectively separated
It is arranged at described photolithography plate rinse bath, between wafer photolithography glue rinse bath and BOE rinse bath；
Described HPM rinse bath, SPM rinse bath, hard mask rinse bath and other two institute
Stating DI rinse bath and may be contained within described second framework, DI rinse bath described in other two is respectively
It is arranged at intervals between described HPM rinse bath, SPM rinse bath and hard mask rinse bath；
And/or, described transport robot is arranged at described first framework and the boundary line of the second framework
On；
And/or, described cassette frame connects drier, and the wafer on described cassette frame is through over cleaning
The most automatically it is transferred to drier and performs spin-drying operation.
Preferably, described photolithography plate rinse bath, wafer photolithography glue rinse bath, hard mask rinse bath
It is PTFE, described device framework and multiple described DI with the material of BOE rinse bath to clean
The material of groove is PTFE or PVDF, described HPM rinse bath and the material of SPM rinse bath
It is quartz.
Present invention also offers the cleaning method of a kind of above-mentioned cleaning device, it may be assumed that in described calculating
Under the control of machine, described transport robot the wafer on described cassette frame is transported to above-mentioned each
Rinse bath, is automatically performed cleaning.
Preferably, described cleaning method specifically includes: the first wet-cleaning, the second wet-cleaning,
3rd wet-cleaning, the 4th wet-cleaning and the 5th wet-cleaning；
Described first wet-cleaning is after washing away deposition under-clad layer or deposition optical waveguide core layer
The residue of crystal column surface, method particularly includes:
Step 1-1: utilize SPM cleanout fluid in described SPM rinse bath to clean described wafer:
Under the conditions of 95～100 °, described wafer is at 4 parts of sulfuric acid solutions and 1 part of hydrogen peroxide solution composition
SPM cleanout fluid soaks 15～20min；Or utilize the HPM in described HPM rinse bath clear
Washing liquid clean described wafer: under the conditions of 70～75 °, described wafer 1 part of hydrochloric acid solution, 1 part
The HPM cleanout fluid of hydrogen peroxide solution and 5 parts of water compositions soaks 10～15min；
Step 1-2: utilize the deionized water in described DI rinse bath to clean described wafer 1～3min,
Dry with described centrifuge, then dry；
And/or, described second wet-cleaning is for washing away the residue on described photolithography plate, specifically
Method is:
The stripper in described photolithography plate rinse bath is utilized to clean described photolithography plate 5～20min；
And/or, described 3rd wet-cleaning is for washing away the crystal column surface after etch hardmask
Residue, method particularly includes:
Step 3-1: utilize the stripper in described wafer photolithography glue rinse bath to clean described wafer
5～20min；
Step 3-2: utilize the deionized water in described DI rinse bath to clean described wafer 1～3min,
Dry with described centrifuge, then dry；
And/or, described 4th wet-cleaning is for washing away the wafer table after etching optical waveguide core layer
The residue in face, method particularly includes:
Step 4-1: utilize the metal cleaner in described hard mask rinse bath to clean described etching light
Wafer after waveguide core layer: this wafer soaks in described metal cleaner；
Step 4-2: utilize the deionized water in described DI rinse bath to clean this wafer 1～3min,
Dry with described centrifuge, then dry；
And/or, described 5th the most described 4th wet-cleaning of wet-cleaning, it is used for washing away quarter
The SiO of wafer optical waveguide line side wall residual after erosion optical waveguide core layer2Granule, method particularly includes:
Step 5-1: utilize the silicon dioxide etching liquid in described BOE rinse bath to clean described crystalline substance
Circle: described wafer is carved at the silicon dioxide of 1 part of hydrogen fluoride solution and 6 parts of ammonium fluoride solution compositions
Erosion liquid soaks 10～15sec；
Step 5-2: utilize the deionized water in described DI rinse bath to clean described wafer 1～3min,
Dry with described centrifuge, then dry；
And/or, described photolithography plate rinse bath can not share with wafer photolithography glue rinse bath.
(3) beneficial effect
The technique scheme of the present invention has the advantages that
1, the wet-cleaning device of the present invention, the equal optimal design-aside of each rinse bath in device framework,
Easy for installation, and make the route of cleaning shorten, and save floor space；This cleaning fills
Automatic timer, automatic heating device and the thermostat put are joined directly together with computer system,
The cleaning making wafer is more easy to obtain Automated condtrol, decreases the inconvenience that manual operation brings；
This cleaning device is automatically controlled by a computer, and sets each process, operator only need by
Need clean wafer be placed on cassette frame, perform program, transport robot by rotate,
Left and right, front and back and move up and down, mentioning and discharging of wafer can be realized, and wafer can be turned
Deliver to each rinse bath, be automatically performed cleaning, thus decrease wafer transhipment number of times, prevent crystalline substance
Circle secondary pollution；This cassette frame and centrifugal swing dryer slitless connection, wafer quilt after having cleaned
Automatically it is transferred to drier and performs spin-drying operation, simple and convenient；Action required personnel are few, and only 1
People can complete whole cleaning operation.Compared to conventional cleaning device, this wet-cleaning device energy
Enough realize the automatization of fiber waveguide wafer cleaning, which save time, equipment, fund and operation
Personnel, improve production efficiency, reduce secondary pollution.
2, the cleaning method of the wet-cleaning device of the present invention proposes based on this cleaning device,
Its first wet-cleaning, the second wet-cleaning, the 3rd wet-cleaning, the 4th wet-cleaning and
Five wet-cleaning are all by prior art is made improvement and optimal design-aside, in computer system
Automatically controlling under, it is possible to carry out the cleaning of wafer respectively for each stage of wafer production,
Which reduce cleaning step, shorten scavenging period, improve cleaning performance and cleaning efficiency,
Thus greatly reduce production cost.
Accompanying drawing explanation
Fig. 1 is existing fiber waveguide wafer manufacturing process schematic diagram；
Fig. 2 is the wet-cleaning device schematic diagram described in the embodiment of the present invention one；
Fig. 3 is the fiber waveguide wafer manufacturing process schematic diagram after the present invention optimizes.
Wherein, 1, photolithography plate rinse bath；2, DI rinse bath；3, wafer photolithography glue rinse bath；
5, BOE rinse bath；6, HPM rinse bath；8, SPM rinse bath；10, hard mask is cleaned
Groove；12, cassette frame；13, transport robot；14, device framework；15, the first framework；
16, the second framework.
Detailed description of the invention
With embodiment, embodiments of the present invention are described in further detail below in conjunction with the accompanying drawings.
Following example are used for illustrating the present invention, but can not be used for limiting the scope of the present invention.
In describing the invention, except as otherwise noted, " multiple " are meant that two or two
Above；Term " on ", D score, "left", "right", " interior ", " outward ", " front end ", " rear end ",
The orientation of the instruction such as " head ", " afterbody " or position relationship be based on orientation shown in the drawings or
Position relationship, is for only for ease of the description present invention and simplifies description rather than instruction or hint
The device of indication or element must have specific orientation, with specific azimuth configuration and operation,
Therefore it is not considered as limiting the invention.Additionally, term " first ", " second ", "
Three " etc. it is only used for describing purpose, and it is not intended that instruction or hint relative importance.At this
In the description of invention, it should be noted that unless otherwise clearly defined and limited, term " peace
Dress ", should be interpreted broadly " being connected ", " connection ", for example, it may be fix connection, it is possible to
Being to removably connect, or it is integrally connected；Can be to be mechanically connected, it is also possible to be electrical connection；
Can be to be joined directly together, it is also possible to be indirectly connected to by intermediary.Common for this area
For technical staff, above-mentioned term concrete meaning in the present invention can be understood with concrete condition.
Embodiment one
As it is shown on figure 3, a kind of wet method for fiber waveguide wafer production that the present embodiment provides is clear
Cleaning device, including device framework 14, HPM rinse bath 6,8, four DI of SPM rinse bath
Rinse bath 2, photolithography plate rinse bath 1, wafer photolithography glue rinse bath 3, BOE rinse bath 5, hard
Cleaning masks groove 10 and transport robot 13；Device framework about 14 two ends are equipped with cassette
Frame 12, each cassette frame 12 all can hold 25 wafer.Device framework 14 includes the first framework
15 and second framework 16；Photolithography plate rinse bath 1, wafer photolithography glue rinse bath 3, BOE clean
Groove 5 and two DI rinse baths 2 may be contained within the first framework 15, two DI rinse baths 2
It is respectively separated and is arranged at photolithography plate rinse bath 1, wafer photolithography glue rinse bath 3 and BOE rinse bath
Between 5；HPM rinse bath 6, SPM rinse bath 8, hard mask rinse bath 10 and remaining two
Individual DI rinse bath 2 may be contained within the second framework 16, between other two DI rinse bath 2 difference
Every being arranged between HPM rinse bath 6, SPM rinse bath 8 and hard mask rinse bath 10.Turn
Fortune robot 13 is arranged on the boundary line of described first framework 15 and the second framework 16.
It is respectively equipped with HPM cleanout fluid and SPM in HPM rinse bath 6 and SPM rinse bath 8
Cleanout fluid, is equipped with deionized water, photolithography plate rinse bath 1 and wafer in four DI rinse baths 2
It is equipped with stripper in photoresist rinse bath 3, in BOE rinse bath 5, is provided with silicon dioxide etching
Liquid, is provided with metal cleaner in hard mask rinse bath 10, photolithography plate rinse bath 1 is used for washing away light
Residue on mechanical, remaining each rinse bath is used to the residue washing away on crystal column surface；
HPM rinse bath 6,8, four DI rinse baths 2 of SPM rinse bath, photolithography plate rinse bath 1,
Wafer photolithography glue rinse bath 3, BOE rinse bath 5 and hard mask rinse bath 10 are equipped with the most fixed
Time device (not shown), and HPM rinse bath 6, SPM rinse bath 8, wafer photolithography
Glue rinse bath 3 and hard mask rinse bath 10 be equipped with automatic heating device (not shown) and
Thermostat (not shown), automatic timer, automatic heating device and thermostat are equal
Automatically controlled by computer (not shown), automatic timer for set cleaning time
Between, it is corresponding rinse bath heat supply that automatic heating device and thermostat are used for while cleaning.
Transport robot 13 is used for being transported to the wafer on cassette frame 12 each rinse bath above-mentioned,
Cassette frame 12 connects has drier, the wafer on cassette frame 12 automatically to transfer after over cleaning
Spin-drying operation is performed to drier；This device is automatically controlled by a computer, and sets each technique journey
Sequence, operator only need to be placed on needing the wafer cleaned on cassette frame 12, perform program,
Cleaning can be automatically performed.
In the present embodiment, the automatic timer of BOE rinse bath 5 is clear by BOE rinse bath 5
The time of washing is set as 10sec, and the automatic timer of each DI rinse bath 2 is respectively by each DI
The scavenging period of rinse bath 2 is all set as 1min；HPM rinse bath 6 and SPM rinse bath 8
Automatic timer respectively the scavenging period of these two rinse baths is set as 10min and
15min；The automatic timer of remaining each rinse bath is all in accordance with specifically needing to enter scavenging period
Row relative set, but in the range of being all set in 5～20min.The automatic heating of SPM rinse bath 8
Cleaning temperature is maintained 95 ° by device and thermostat, HPM rinse bath 6 automatically add hot charging
Put, with thermostat, cleaning temperature is maintained 70 °, wafer photolithography glue rinse bath 3 and hard mask
The automatic heating device of rinse bath 10 and thermostat are all in accordance with specifically needing to carry out cleaning temperature
Relative set, but in the range of being kept at 60～80 °.
Photolithography plate rinse bath 1, wafer photolithography glue rinse bath 3, hard mask rinse bath 10 and BOE
The material of rinse bath 5 is PTFE, described device framework 14 and four DI rinse baths 2
Material is PVDF, and the material of described HPM rinse bath 6 and SPM rinse bath 8 is stone
English.
In work, under the automatically controlling of computer, set each process, operator
Wafer to be washed is placed on cassette frame 12, performs program, transport robot 13 by rotating,
Left and right, front and back and move up and down the wafer on cassette frame 12 is transferred to each rinse bath, automatically
Complete to clean；Cassette frame 12 and centrifugal swing dryer slitless connection, after having cleaned, wafer is by certainly
The dynamic drier that is transferred to performs spin-drying operation.
In sum, the wet-cleaning device of the present embodiment, the equal optimal design-aside of each rinse bath exists
In device framework 14, easy for installation, and make the route of cleaning shorten, and save occupation of land
Area；The automatic timer of this cleaning device, automatic heating device and thermostat and calculating
Machine system is joined directly together so that the cleaning of wafer is more easy to obtain Automated condtrol, decreases manpower
The inconvenience that operation brings；This cleaning device is automatically controlled by a computer, and sets each process,
Operator only need to be placed on needing the wafer cleaned on cassette frame 12, and performs program, transhipment
Robot 13 by rotations, left and right, front and back and move up and down, can realize wafer mention with
Release, and wafer can be transferred to each rinse bath, it is automatically performed cleaning, thus decreases crystalline substance
Circle transhipment number of times, prevents wafer secondary pollution；This cassette frame 12 and centrifugal swing dryer slitless connection,
After cleaning completes, wafer is transferred to drier execution spin-drying operation automatically, simple and convenient；Institute
Needing operator few, only 1 people can complete whole cleaning operation.Compared to conventional cleaning device,
This wet-cleaning device is capable of the automatization of fiber waveguide wafer cleaning, which save the time,
Equipment, fund and operator, improve production efficiency, reduces secondary pollution.
Embodiment two
Present embodiments provide the cleaning method of wet-cleaning device described in a kind of embodiment one, its
Including the first wet-cleaning, the second wet-cleaning, the 3rd wet-cleaning, the 4th wet-cleaning and
5th wet-cleaning；
First wet-cleaning is for washing away the wafer after deposition under-clad layer or deposition optical waveguide core layer
The residue on surface, method particularly includes:
Step 1-1: utilize the SPM cleanout fluid cleaning wafer in SPM rinse bath 8: 95 ° of bars
Under part, described wafer is at 4 parts of sulfuric acid solutions and the SPM cleanout fluid of 1 part of hydrogen peroxide solution composition
Middle immersion 15min；
Step 1-2: utilize the deionized water cleaning wafer 1min in DI rinse bath 2, with centrifugal
Machine dries, and then dries；
Second wet-cleaning is used for washing away the residue on photolithography plate, method particularly includes:
The stripper in photolithography plate rinse bath 1 is utilized to clean photolithography plate, if select is peace intelligence
AZ GXR-601 ISO positive photo glue, then can use Guangdong Ward gas limited company
Stripper SPR-600 clean, scavenging period is set to 10min,；
3rd wet-cleaning is used for washing away the residue on the crystal column surface after etch hardmask,
Method particularly includes:
Step 3-1: utilize the stripper cleaning wafer in wafer photolithography glue rinse bath 3, if choosing
Be peace intelligence AZ GXR-601 ISO positive photo glue, then can use Guangdong Ward gas
The stripper SPR-600 of limited company cleans, and scavenging period is set to 10min；
Step 3-2: utilize the deionized water cleaning wafer 1min in DI rinse bath 2, with centrifugal
Machine dries, and then dries；
4th wet-cleaning is for washing away the residual of the crystal column surface after etching optical waveguide core layer
Thing, method particularly includes:
Step 4-1: utilize the metal cleaner etching fiber waveguide in hard mask rinse bath 10
Wafer after sandwich layer: this wafer soaks in metal cleaner, if selecting to make with metal Al
For hard mask layer, then the aluminum special cleaning of Guangdong Ward gas limited company is can use to clean,
Main component is H3PO4And HNO3；
Step 4-2: utilize the deionized water in DI rinse bath 2 to clean this wafer 1min, with from
Scheming dries, and then dries；
5th wet-cleaning and then the 4th wet-cleaning, be used for washing away etching optical waveguide core layer it
The SiO of rear wafer optical waveguide line side wall residual2Granule, method particularly includes:
Step 5-1: utilize the silicon dioxide etching liquid in described BOE rinse bath 5 to clean described
Wafer: described wafer is at 1 part of hydrogen fluoride solution and the silicon dioxide of 6 parts of ammonium fluoride solution compositions
Etching liquid soaks 10sec；
Step 5-2: utilize the deionized water in described DI rinse bath 2 to clean described wafer 1min,
Dry with described centrifuge, then dry.
In the present embodiment, photolithography plate rinse bath 1 can not share with wafer photolithography glue rinse bath 3,
To avoid new contaminants photolithography plate.
Embodiment three
Present embodiments provide the cleaning method of wet-cleaning device described in a kind of embodiment one, its
Including the first wet-cleaning, the second wet-cleaning, the 3rd wet-cleaning, the 4th wet-cleaning and
5th wet-cleaning；
First wet-cleaning is for washing away the wafer after deposition under-clad layer or deposition optical waveguide core layer
The residue on surface, method particularly includes:
Step 1-1: utilize the HPM cleanout fluid cleaning wafer in HPM rinse bath 6: 70 °
Under the conditions of, wafer is at 1 part of hydrochloric acid solution, 1 part of hydrogen peroxide solution and the HPM of 5 parts of water compositions
Cleanout fluid soaks 10min；
Step 1-2: utilize the deionized water cleaning wafer 1min in DI rinse bath 2, with centrifugal
Machine dries, and then dries；
Second wet-cleaning is used for washing away the residue on photolithography plate, method particularly includes:
The stripper in photolithography plate rinse bath 1 is utilized to clean photolithography plate, if select is peace intelligence
AZ GXR-601 ISO positive photo glue, then can use Guangdong Ward gas limited company
Stripper SPR-600 clean, scavenging period is set to 20min,；
3rd wet-cleaning is used for washing away the residue on the crystal column surface after etch hardmask,
Method particularly includes:
Step 3-1: utilize the stripper cleaning wafer in wafer photolithography glue rinse bath 3, if choosing
Be peace intelligence AZ GXR-601 ISO positive photo glue, then can use Guangdong Ward gas
The stripper SPR-600 of limited company cleans, and scavenging period is set to 15min；
Step 3-2: utilize the deionized water cleaning wafer 1min in DI rinse bath 2, with centrifugal
Machine dries, and then dries；
4th wet-cleaning is for washing away the residual of the crystal column surface after etching optical waveguide core layer
Thing, method particularly includes:
Step 4-1: utilize the metal cleaner etching fiber waveguide in hard mask rinse bath 10
Wafer after sandwich layer: this wafer soaks in metal cleaner, if selecting to make with metal Al
For hard mask layer, then the aluminum special cleaning of Guangdong Ward gas limited company is can use to clean,
Main component is H3PO4And HNO3；
Step 4-2: utilize the deionized water in DI rinse bath 2 to clean this wafer 1min, with from
Scheming dries, and then dries；
5th wet-cleaning and then the 4th wet-cleaning, be used for washing away etching optical waveguide core layer it
The SiO of rear wafer optical waveguide line side wall residual2Granule, method particularly includes:
Step 5-1: utilize the silicon dioxide etching liquid in described BOE rinse bath 5 to clean described
Wafer: described wafer is at 1 part of hydrogen fluoride solution and the silicon dioxide of 6 parts of ammonium fluoride solution compositions
Etching liquid soaks 10sec；
Step 5-2: utilize the deionized water in described DI rinse bath 2 to clean described wafer 1min,
Dry with described centrifuge, then dry.
In the present embodiment, photolithography plate rinse bath 1 can not share with wafer photolithography glue rinse bath 3.
Integrated embodiment two and embodiment three, the using method of the wet-cleaning device of the present invention is
Propose based on this cleaning device, its first wet-cleaning, the second wet-cleaning, the 3rd wet method
Clean, the 4th wet-cleaning and the 5th wet-cleaning be all by prior art is made improvement and
Optimal design-aside, under the automatically controlling of computer system, it is possible to for each rank of wafer production
Section carries out the cleaning of wafer respectively, which reduces cleaning step, shortens scavenging period, improves
Cleaning performance and cleaning efficiency, thus greatly reduce production cost.
See Fig. 3, using method based on this wet-cleaning device, The present invention gives a kind of excellent
Fiber waveguide wafer manufacturing process schematic diagram after change.
Embodiments of the invention are given for the sake of example and description, and are not nothing left
Leakage or limit the invention to disclosed form.Many modifications and variations are for this area
It is apparent from for those of ordinary skill.Selecting and describing embodiment is to more preferably illustrate
The principle of the present invention and actual application, and make those of ordinary skill in the art it will be appreciated that this
Invent thus design the various embodiments with various amendments being suitable to special-purpose.
Claims (10)
1. the wet-cleaning device for fiber waveguide wafer production, it is characterized in that, including device framework, two ends, described device framework left and right are equipped with cassette frame, described cassette frame is used for holding wafer, is provided with HPM rinse bath, SPM rinse bath, multiple DI rinse bath, photolithography plate rinse bath, wafer photolithography glue rinse bath, BOE rinse bath, hard mask rinse bath, transport robot and computer in described device framework；Under the control of described computer, the wafer on described cassette frame is transported to each rinse bath above-mentioned by described transport robot.
Wet-cleaning device for fiber waveguide wafer production the most according to claim 1, it is characterized in that, HPM cleanout fluid and SPM cleanout fluid it is respectively equipped with in described HPM rinse bath and SPM rinse bath, it is equipped with deionized water in the plurality of DI rinse bath, it is equipped with stripper in described photolithography plate rinse bath and wafer photolithography glue rinse bath, it is provided with silicon dioxide etching liquid in described BOE rinse bath, it is provided with metal cleaner in described hard mask rinse bath, described photolithography plate rinse bath is for washing away the residue on photolithography plate, remaining each described rinse bath is used to the residue washing away on crystal column surface.
Wet-cleaning device for fiber waveguide wafer production the most according to claim 1, it is characterized in that, described HPM rinse bath, SPM rinse bath, multiple DI rinse baths, photolithography plate rinse bath, wafer photolithography glue rinse bath, BOE rinse bath and hard mask rinse bath are equipped with automatic timer, and described HPM rinse bath, SPM rinse bath, wafer photolithography glue rinse bath and hard mask rinse bath are equipped with automatic heating device and thermostat, described automatic timer, automatic heating device and thermostat are all automatically controlled by a computer, described automatic timer is for setting the time of cleaning, it is corresponding rinse bath heat supply that described automatic heating device and thermostat are used for while cleaning.
Wet-cleaning device for fiber waveguide wafer production the most according to claim 3, it is characterized in that, the scavenging period of this BOE rinse bath is set as 5～60sec by the automatic timer of described BOE rinse bath, and the scavenging period of corresponding rinse bath is all set as 5～20min by the automatic timer of remaining each described rinse bath.
Wet-cleaning device for fiber waveguide wafer production the most according to claim 3, it is characterized in that, cleaning temperature is maintained 80～100 ° by the automatic heating device of described SPM rinse bath and thermostat, and described HPM rinse bath, wafer photolithography glue rinse bath and hard mask rinse bath are equipped with automatic heating device and thermostat and cleaning temperature maintains 60～80 °.
Wet-cleaning device for fiber waveguide wafer production the most according to claim 1, it is characterised in that the quantity of described DI rinse bath is four.
Wet-cleaning device for fiber waveguide wafer production the most according to claim 6, it is characterised in that described device framework includes the first framework and the second framework；
Described photolithography plate rinse bath, wafer photolithography glue rinse bath, BOE rinse bath and two described DI rinse baths may be contained within described first framework, and two described DI rinse baths are respectively separated and are arranged at described photolithography plate rinse bath, between wafer photolithography glue rinse bath and BOE rinse bath；
DI rinse bath described in described HPM rinse bath, SPM rinse bath, hard mask rinse bath and other two may be contained within described second framework, and DI rinse bath described in other two is respectively separated and is arranged between described HPM rinse bath, SPM rinse bath and hard mask rinse bath；
And/or, described transport robot is arranged on the boundary line of described first framework and the second framework；
And/or, described cassette frame connects has drier, the wafer on described cassette frame to be automatically transferred to drier execution spin-drying operation after over cleaning.
Wet-cleaning device for fiber waveguide wafer production the most according to claim 1, it is characterized in that, the material of described photolithography plate rinse bath, wafer photolithography glue rinse bath, hard mask rinse bath and BOE rinse bath is PTFE, the material of described device framework and multiple described DI rinse bath is PTFE or PVDF, and the material of described HPM rinse bath and SPM rinse bath is quartz.
9. the cleaning method of the wet-cleaning device according to any one of claim 1-8, it is characterised in that under the control of described computer, the wafer on described cassette frame is transported to each rinse bath above-mentioned by described transport robot, is automatically performed cleaning.
The cleaning method of wet-cleaning device the most according to claim 9, it is characterised in that specifically include: the first wet-cleaning, the second wet-cleaning, the 3rd wet-cleaning, the 4th wet-cleaning and the 5th wet-cleaning；
Described first wet-cleaning deposits the residue of the crystal column surface after under-clad layer or deposition optical waveguide core layer for washing away, method particularly includes:
Step 1-1: utilize the SPM cleanout fluid in described SPM rinse bath to clean described wafer: under the conditions of 95～100 °, described wafer soaks 15～20min in the SPM cleanout fluid of 4 parts of sulfuric acid solutions and 1 part of hydrogen peroxide solution composition；Or utilize the HPM cleanout fluid in described HPM rinse bath to clean described wafer: under the conditions of 70～75 °, described wafer soaks 10～15min in the HPM cleanout fluid of 1 part of hydrochloric acid solution, 1 part of hydrogen peroxide solution and 5 parts of water compositions；
Step 1-2: utilize the deionized water in described DI rinse bath to clean described wafer 1～3min, dry with described centrifuge, then dry；
And/or, described second wet-cleaning is used for washing away the residue on described photolithography plate, method particularly includes:
The stripper in described photolithography plate rinse bath is utilized to clean described photolithography plate 5～20min；
And/or, described 3rd wet-cleaning is used for washing away the residue on the crystal column surface after etch hardmask, method particularly includes:
Step 3-1: utilize the stripper in described wafer photolithography glue rinse bath to clean described wafer 5～20min；
Step 3-2: utilize the deionized water in described DI rinse bath to clean described wafer 1～3min, dry with described centrifuge, then dry；
And/or, described 4th wet-cleaning etches the residue of the crystal column surface after optical waveguide core layer for washing away, method particularly includes:
Step 4-1: utilize the metal cleaner in described hard mask rinse bath to clean the wafer after described etching optical waveguide core layer: this wafer soaks in described metal cleaner；
Step 4-2: utilize the deionized water in described DI rinse bath to clean this wafer 1～3min, dries with described centrifuge, then dries；
And/or, described 5th the most described 4th wet-cleaning of wet-cleaning, the SiO of wafer optical waveguide line side wall residual after washing away etching optical waveguide core layer2Granule, method particularly includes:
Step 5-1: utilize the silicon dioxide etching liquid in described BOE rinse bath to clean described wafer: described wafer soaks 10～15sec in the silicon dioxide etching liquid of 1 part of hydrogen fluoride solution and 6 parts of ammonium fluoride solution compositions；
Step 5-2: utilize the deionized water in described DI rinse bath to clean described wafer 1～3min, dry with described centrifuge, then dry；
And/or, described photolithography plate rinse bath can not share with wafer photolithography glue rinse bath.
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| CN106449475A (en) * | 2016-09-29 | 2017-02-22 | 无锡宏纳科技有限公司 | Import structure for wafers |
| CN108873603A (en) * | 2018-08-21 | 2018-11-23 | 惠科股份有限公司 | Apparatus and method for cleaning photomask |
| CN109244003A (en) * | 2018-08-24 | 2019-01-18 | 江苏晶睿光电科技有限公司 | A kind of after-treatment system for wafer production |
| CN110648948A (en) * | 2019-09-27 | 2020-01-03 | 北京半导体专用设备研究所（中国电子科技集团公司第四十五研究所） | Quartz cleaning equipment |
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| CN106449475A (en) * | 2016-09-29 | 2017-02-22 | 无锡宏纳科技有限公司 | Import structure for wafers |
| CN108873603A (en) * | 2018-08-21 | 2018-11-23 | 惠科股份有限公司 | Apparatus and method for cleaning photomask |
| CN109244003A (en) * | 2018-08-24 | 2019-01-18 | 江苏晶睿光电科技有限公司 | A kind of after-treatment system for wafer production |
| CN110648948A (en) * | 2019-09-27 | 2020-01-03 | 北京半导体专用设备研究所（中国电子科技集团公司第四十五研究所） | Quartz cleaning equipment |
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