CN105977187B - A kind of wet-cleaning device and its cleaning method for fiber waveguide wafer production - Google Patents

A kind of wet-cleaning device and its cleaning method for fiber waveguide wafer production Download PDF

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Publication number
CN105977187B
CN105977187B CN201610366976.XA CN201610366976A CN105977187B CN 105977187 B CN105977187 B CN 105977187B CN 201610366976 A CN201610366976 A CN 201610366976A CN 105977187 B CN105977187 B CN 105977187B
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cleaning
rinse
wafer
rinse bath
wet
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CN105977187A (en
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陈波
郑煜
彭延斌
余朝晃
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Hunan Newfiber Optical Electronics Co Ltd
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Hunan Newfiber Optical Electronics Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67023—Apparatus for fluid treatment for general liquid treatment, e.g. etching followed by cleaning
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02052—Wet cleaning only

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)

Abstract

The present invention relates to wafer production field, and in particular to a kind of wet-cleaning device and its cleaning method for fiber waveguide wafer production.The device includes device framework, device framework left and right ends are equipped with cassette frame, and HPM rinse baths, SPM rinse baths, multiple DI rinse baths, photolithography plate rinse bath, wafer photolithography glue rinse bath, BOE rinse baths, hard mask rinse bath and transport robot are equipped with device framework；HPM rinse baths, SPM rinse baths, multiple DI rinse baths, photolithography plate rinse bath, wafer photolithography glue rinse bath, BOE rinse baths and hard mask rinse bath are equipped with automatic timer, and HPM rinse baths, SPM rinse baths, wafer photolithography glue rinse bath and hard mask rinse bath are equipped with automatic heating device and thermostat.The wet-cleaning device can realize the automation of wafer cleaning, its cleaning method improves cleaning performance.

Description

A kind of wet-cleaning device and its cleaning method for fiber waveguide wafer production
Technical field
The present invention relates to wafer production field, more particularly to a kind of wet-cleaning device for fiber waveguide wafer production and Its cleaning method.
Background technology
Fiber waveguide device is the key core device in optical fiber telecommunications system, the transmission, optical signal for lightwave signal point With/multiplex, filtering, switch etc., typical device has planar optical waveguide splitter, array waveguide grating, optical waveguide filter, light to open Pass, optical attenuator etc..Fiber waveguide wafer is the preceding road technique of fiber waveguide device, has wafer to be just packaged into device.Fiber waveguide Wafer is using the optics wafer of Planar Lightwave Circuit Technology (PLC, Planar Lightwave Circuit) manufacture, by cutting Cut, become chip after end surface grinding polishing, be then packaged as fiber waveguide device.
The characteristic size of fiber waveguide wafer is 3~5 μm, although in wafer manufacturing process, photoetching is complete in hundred grades of environment Into other techniques are completed in thousand grades of environment, but still particle can be caused to be adhered to crystal column surface；On the other hand, depositing Or during etching, be adhered to the material of cavity wall also can be adhered to crystal column surface by ion bombardment；During the test, no It is evitable to be contacted with other objects, and then adhere to some particles.These particles belong to pollutant, it is necessary to wash.If The particle is just adhered on optical wave wire, can cause the interruption of optical waveguide loop；If fallen on optical wave wire side, deposit Cheng Hou, the region for having particle easily form larger residual stress after the high-temperature anneal, according to photoelastic effect, can cause big polarization phase Close loss.It is therefore desirable to which particle is removed by wet-cleaning, to ensure the cleaning of crystal column surface.
Furthermore in fiber waveguide wafer manufacturing process, the removing of photoresist, can be removed by the way of plasma, but It is of high cost, chemical removing can be carried out by the way of wet-cleaning, it is simple, quick, efficient.The removing of hard mask layer, is adopted Removed with wet-cleaning chemistry.And after optical waveguide core layer etching is completed, the remaining engraving of fiber waveguide side wall can be by wet Method cleaning chemistry removes.
Referring to Fig. 1, needed during manufacture fiber waveguide wafer to the process after substrate, post-depositional process wafer, etching Process wafer after wafer and test carries out chemical cleaning, to remove substrate, the particle on process crystal column surface, etching residue The material such as thing and photoresist.6 steps are at least needed to clean, it is necessary to more cleaning equipments in fiber waveguide wafer manufacturing process, every Cleaning equipment also need to be equipped with operating personnel, wafer transport often, route length, easily cause secondary pollution.According in Fig. 1 Although cleaning way can remove the particle of crystal column surface, organic matter, metal and native oxide, process is complicated, institute It is more with chemical substance.And chemical reagent used highly volatile in heating process in RCA standard cleaning methods, produce strong Irritating smell, it is so also higher to requirement of shelter, otherwise easily cause operating personnel uncomfortable, or cause its in the environment The corrosion of his board.
The content of the invention
(1) technical problems to be solved
The technical problem to be solved in the present invention is to provide a kind of wet-cleaning device for fiber waveguide wafer production and Its cleaning method, in fiber waveguide wafer production process, which can realize the automation of wafer cleaning, save Time, equipment, fund and operating personnel, improve production efficiency, reduce secondary pollution；The cleaning that its cleaning method is included Technique improves cleaning performance, reduces production cost.
(2) technical solution
In order to solve the above technical problem, the present invention provides a kind of wet-cleaning dress for fiber waveguide wafer production Put, it includes device framework, and the device framework left and right ends are equipped with cassette frame, and the cassette frame is used to hold wafer, institute State and HPM rinse baths, SPM rinse baths, multiple DI rinse baths, photolithography plate rinse bath, the cleaning of wafer photolithography glue are equipped with device framework Groove, BOE rinse baths, hard mask rinse bath, transport robot and computer；Under the control of the computer, the transhipment Wafer on the cassette frame is transported to above-mentioned each rinse bath by robot.
Preferably, HPM cleaning solutions and SPM cleaning solutions are respectively equipped with the HPM rinse baths and SPM rinse baths, it is described more Deionized water is equipped with a DI rinse baths, stripper is equipped with photolithography plate rinse bath and wafer photolithography the glue rinse bath, Silica etching liquid is equipped with the BOE rinse baths, metal cleaner, the photolithography plate are equipped with the hard mask rinse bath Rinse bath is used to wash away the residue on photolithography plate, remaining each described rinse bath is used to wash away the residual on crystal column surface Thing.
Preferably, the HPM rinse baths, SPM rinse baths, multiple DI rinse baths, photolithography plate rinse bath, wafer photolithography glue are clear Washing trough, BOE rinse baths and hard mask rinse bath are equipped with automatic timer, and the HPM rinse baths, SPM rinse baths, wafer Photoresist rinse bath and hard mask rinse bath are equipped with automatic heating device and thermostat, the automatic timer, automatic Heating unit and thermostat are automatically controlled by a computer, and the automatic timer is used for the time for setting cleaning, described It is corresponding rinse bath heat supply that automatic heating device and thermostat, which are used for while cleaning,；
Preferably, the automatic timer of the BOE rinse baths scavenging period of the BOE rinse baths is set as 5~ The scavenging period of corresponding rinse bath is set as 5~20min by 60sec, the automatic timer of remaining each rinse bath.
Preferably, cleaning temperature is maintained 80~100 ° by the automatic heating device of the SPM rinse baths and thermostat, The HPM rinse baths, wafer photolithography glue rinse bath and hard mask rinse bath are equipped with automatic heating device and thermostat will be clear Wash temperature and maintain 60~80 °.
Preferably, the quantity of the DI rinse baths is four.
Preferably, the device framework includes the first frame and the second frame；
The photolithography plate rinse bath, wafer photolithography glue rinse bath, BOE rinse baths and two DI rinse baths are respectively provided with In in first frame, two DI rinse baths are respectively separated that to be arranged at the photolithography plate rinse bath, wafer photolithography glue clear Between washing trough and BOE rinse baths；
The HPM rinse baths, SPM rinse baths, hard mask rinse bath and DI rinse baths described in other two may be contained within In second frame, DI rinse baths described in other two, which are respectively separated, is arranged at the HPM rinse baths, SPM rinse baths and hard Between cleaning masks groove；
And/or the transport robot is arranged on the boundary line of first frame and the second frame；
And/or the cassette frame is connected with dryer, the wafer on the cassette frame through being transferred to automatically after over cleaning Dryer performs spin-drying operation.
Preferably, the material of the photolithography plate rinse bath, wafer photolithography glue rinse bath, hard mask rinse bath and BOE rinse baths Matter is PTFE, and the material of the device framework and multiple DI rinse baths is PTFE or PVDF, the HPM rinse baths Material with SPM rinse baths is quartz.
Present invention also offers a kind of cleaning method of above-mentioned cleaning device, i.e.,：It is described under the control of the computer Wafer on the cassette frame is transported to above-mentioned each rinse bath by transport robot, is automatically performed cleaning.
Preferably, the cleaning method specifically includes：First wet-cleaning, the second wet-cleaning, the 3rd wet-cleaning, Four wet-cleanings and the 5th wet-cleaning；
First wet-cleaning is used for the residual of the crystal column surface after washing away deposition under-clad layer or depositing optical waveguide core layer Thing is stayed, specific method is：
Step 1-1：The wafer is cleaned using the SPM cleaning solutions in the SPM rinse baths：Under the conditions of 95~100 °, institute State wafer and soak 15~20min in the SPM cleaning solutions of 4 parts of sulfuric acid solutions and 1 part of hydrogen peroxide solution composition；Or described in utilizing HPM cleaning solutions in HPM rinse baths clean the wafer：Under the conditions of 70~75 °, the wafer 1 part of hydrochloric acid solution, 1 part it is double 10~15min is soaked in the HPM cleaning solutions of oxygen aqueous solution and 5 parts of water compositions；
Step 1-2：1~the 3min of wafer is cleaned using the deionized water in the DI rinse baths, with the centrifuge Drying, is then dried；
And/or second wet-cleaning is used to wash away the residue on the photolithography plate, specific method is：
5~the 20min of photolithography plate is cleaned using the stripper in the photolithography plate rinse bath；
And/or residue of the 3rd wet-cleaning on the crystal column surface after washing away etch hardmask, specifically Method is：
Step 3-1：5~the 20min of wafer is cleaned using the stripper in the wafer photolithography glue rinse bath；
Step 3-2：1~the 3min of wafer is cleaned using the deionized water in the DI rinse baths, with the centrifuge Drying, is then dried；
And/or residue of the 4th wet-cleaning for the crystal column surface after washing away etching optical waveguide core layer, tool Body method is：
Step 4-1：After the metal cleaner cleaning etching optical waveguide core layer in the hard mask rinse bath Wafer：The wafer soaks in the metal cleaner；
Step 4-2：1~3min of the wafer is cleaned using the deionized water in the DI rinse baths, is got rid of with the centrifuge It is dry, then dry；
And/or the 5th wet-cleaning and then the 4th wet-cleaning, for wash away etching optical waveguide core layer it The remaining SiO of wafer optical waveguide line side wall afterwards2Particle, specific method are：
Step 5-1：The wafer is cleaned using the silica etching liquid in the BOE rinse baths：The wafer is at 1 part 10~15sec is soaked in the silica etching liquid of hydrogen fluoride solution and 6 parts of ammonium fluoride solution compositions；
Step 5-2：1~the 3min of wafer is cleaned using the deionized water in the DI rinse baths, with the centrifuge Drying, is then dried；
And/or the photolithography plate rinse bath cannot be shared with wafer photolithography glue rinse bath.
(3) beneficial effect
The above-mentioned technical proposal of the present invention has the advantages that：
1st, wet-cleaning device of the invention, each equal optimal design-aside of rinse bath is easy for installation in device framework, and The route of cleaning is shortened, and save floor space；Automatic timer, automatic heating device and the perseverance of the cleaning device Warm device is connected directly with computer system so that the cleaning of wafer is more easy to obtain automated control, reduces manual operation band The inconvenience come；The cleaning device is automatically controlled by a computer, and sets each process, and operating personnel only need to will need what is cleaned Wafer is placed on cassette frame, executive program, and transport robot passes through rotation, left and right, front and rear and up and down motion, you can realizes brilliant It is round to lift and discharge, and wafer can be transferred to each rinse bath, cleaning is automatically performed, thus reduce wafer transhipment time Number, prevents wafer secondary pollution；The cassette frame and centrigugal swing dryer slitless connection, wafer is transferred to automatically after cleaning is completed Dryer performs spin-drying operation, simple and convenient；Required operating personnel are few, and only 1 people can complete whole cleaning operations.Compared to biography System cleaning equipment, the wet-cleaning device can realize the automation of fiber waveguide wafer cleaning, which save time, equipment, money Gold and operating personnel, improve production efficiency, reduce secondary pollution.
2nd, the cleaning method of wet-cleaning device of the invention is proposed based on the cleaning device, its first wet method is clear Wash, the second wet-cleaning, the 3rd wet-cleaning, the 4th wet-cleaning and the 5th wet-cleaning are by being made to the prior art Improvement and optimal design-aside, under the automatically controlling of computer system, each stage that can be directed to wafer production carry out crystalline substance respectively Round cleaning, which reduces cleaning step, shortens scavenging period, improves cleaning performance and cleaning efficiency, thus drops significantly Low production cost.
Brief description of the drawings
Fig. 1 is existing fiber waveguide wafer manufacturing process schematic diagram；
Fig. 2 is the wet-cleaning schematic device described in the embodiment of the present invention one；
Fig. 3 is the fiber waveguide wafer manufacturing process schematic diagram after present invention optimization.
Wherein, 1, photolithography plate rinse bath；2nd, DI rinse baths；3rd, wafer photolithography glue rinse bath；5th, BOE rinse baths；6th, HPM is clear Washing trough；8th, SPM rinse baths；10th, hard mask rinse bath；12nd, cassette frame；13rd, transport robot；14th, device framework；15th, first Frame；16th, the second frame.
Embodiment
Embodiments of the present invention are described in further detail with reference to the accompanying drawings and examples.Following embodiments are used for Illustrate the present invention, but cannot be used for limiting the scope of the invention.
In the description of the present invention, unless otherwise indicated, " multiple " are meant that two or more；Term " on ", " under ", "left", "right", " interior ", " outer ", " front end ", " rear end ", " head ", the orientation of the instruction such as " afterbody " or position relationship be Based on orientation shown in the drawings or position relationship, it is for only for ease of the description present invention and simplifies description, rather than instruction or dark Show that the device of meaning or element there must be specific orientation, with specific azimuth configuration and operation, thus it is it is not intended that right The limitation of the present invention.In addition, term " first ", " second ", " the 3rd " etc. be only used for description purpose, and it is not intended that instruction or Imply relative importance.In the description of the present invention, it is necessary to which explanation, unless otherwise clearly defined and limited, term " are pacified Dress ", " connected ", " connection " should be interpreted broadly, for example, it may be fixedly connected or be detachably connected, or integratedly Connection；Can mechanically connect or be electrically connected；It can be directly connected, can also be indirectly connected by intermediary. For the ordinary skill in the art, the concrete meaning of above-mentioned term in the present invention can be understood with concrete condition.
Embodiment one
As shown in Fig. 2, a kind of wet-cleaning device for fiber waveguide wafer production provided in this embodiment, including equipment Frame 14, HPM rinse baths 6,8, four DI rinse baths 2 of SPM rinse baths, photolithography plate rinse bath 1, wafer photolithography glue rinse bath 3, BOE rinse baths 5, hard mask rinse bath 10 and transport robot 13；14 left and right ends of device framework are equipped with cassette frame 12, respectively A cassette frame 12 can hold 25 wafers.Device framework 14 includes the first frame 15 and the second frame 16；Photolithography plate rinse bath 1st, wafer photolithography glue rinse bath 3, BOE rinse baths 5 and two DI rinse baths 2 may be contained within the first frame 15, and two DI are clear Washing trough 2, which is respectively separated, to be arranged between photolithography plate rinse bath 1, wafer photolithography glue rinse bath 3 and BOE rinse baths 5；HPM rinse baths 6th, SPM rinse baths 8, hard mask rinse bath 10 and other two DI rinse baths 2 may be contained within the second frame 16, other two DI rinse baths 2, which are respectively separated, to be arranged between HPM rinse baths 6, SPM rinse baths 8 and hard mask rinse bath 10.Transport robot 13 It is arranged on the boundary line of 15 and second frame 16 of the first frame.
HPM cleaning solutions and SPM cleaning solutions are respectively equipped with HPM rinse baths 6 and SPM rinse baths 8, in four DI rinse baths 2 Deionized water is equipped with, stripper is equipped with photolithography plate rinse bath 1 and wafer photolithography glue rinse bath 3, is set in BOE rinse baths 5 There is silica etching liquid, metal cleaner is equipped with hard mask rinse bath 10, photolithography plate rinse bath 1 is used to wash away photolithography plate Residue, remaining each rinse bath is used to wash away the residue on crystal column surface；HPM rinse baths 6, SPM rinse baths 8, four A DI rinse baths 2, photolithography plate rinse bath 1, wafer photolithography glue rinse bath 3, BOE rinse baths 5 and hard mask rinse bath 10 are equipped with Automatic timer (not shown), and HPM rinse baths 6, SPM rinse baths 8, wafer photolithography glue rinse bath 3 and hard mask are clear Washing trough 10 is equipped with automatic heating device (not shown) and thermostat (not shown), automatic timer, automatic Heating unit and thermostat are automatically controlled by computer (not shown), automatic timer be used for set cleaning when Between, automatic heating device and thermostat are used to while cleaning be corresponding rinse bath heat supply.
Transport robot 13 is used to the wafer on cassette frame 12 being transported to above-mentioned each rinse bath, and cassette frame 12 is connected with Dryer, the wafer on cassette frame 12 perform spin-drying operation through being transferred to dryer after over cleaning automatically；The device is by calculating Machine automatically controls, and sets each process, and the wafer for needing to clean need to only be placed on cassette frame 12, perform by operating personnel Program, you can be automatically performed cleaning.
In the present embodiment, the scavenging period of BOE rinse baths 5 is set as 10sec by the automatic timer of BOE rinse baths 5, The scavenging period of each DI rinse baths 2 is set as 1min by the automatic timer of each DI rinse baths 2 respectively；HPM is cleaned The scavenging period of two rinse baths is set as 10min and 15min by the automatic timer of groove 6 and SPM rinse baths 8 respectively； The automatic timer of remaining each rinse bath is set in 5 all in accordance with specifically needing accordingly to be set scavenging period In the range of~20min.Cleaning temperature is maintained 95 ° by the automatic heating device and thermostat of SPM rinse baths 8, HPM rinse baths Cleaning temperature is maintained 70 ° by 6 automatic heating device and thermostat, wafer photolithography glue rinse bath 3 and hard mask rinse bath 10 automatic heating device and thermostat all in accordance with specifically needing accordingly to be set cleaning temperature, but be kept at 60~ In the range of 80 °.
Photolithography plate rinse bath 1, wafer photolithography glue rinse bath 3, the material of hard mask rinse bath 10 and BOE rinse baths 5 are PTFE, the material of the device framework 14 and four DI rinse baths 2 is PVDF, the HPM rinse baths 6 and SPM rinse baths 8 Material be quartz.
In work, under the automatically controlling of computer, each process is set, wafer to be washed is placed on crystalline substance by operating personnel On boat frame 12, executive program, transport robot 13 passes through rotation, left and right, front and rear and move up and down the wafer on cassette frame 12 Each rinse bath is transferred to, is automatically performed cleaning；Cassette frame 12 and centrigugal swing dryer slitless connection, wafer quilt after cleaning is completed The automatic dryer that is transferred to performs spin-drying operation.
In conclusion the wet-cleaning device of the present embodiment, each equal optimal design-aside of rinse bath is in device framework 14, peace Dress is convenient, and the route of cleaning is shortened, and saves floor space；It is the automatic timer of the cleaning device, automatic Heating unit and thermostat are connected directly with computer system so that the cleaning of wafer is more easy to obtain automated control, reduces The inconvenience that manual operation is brought；The cleaning device is automatically controlled by a computer, and sets each process, and operating personnel only need The wafer that cleans will be needed to be placed on cassette frame 12, executive program, transport robot 13 by rotation, left and right, before and after and on Lower movement, you can realize lifting and discharging for wafer, and wafer can be transferred to each rinse bath, be automatically performed cleaning, thus Reduce wafer transhipment number, prevent wafer secondary pollution；The cassette frame 12 and centrigugal swing dryer slitless connection, cleaning completion Wafer is transferred to dryer and performs spin-drying operation automatically afterwards, simple and convenient；Required operating personnel are few, and only 1 people can complete entirely Portion's cleaning operation.Compared to conventional cleaning device, which can realize the automation of fiber waveguide wafer cleaning, its Time, equipment, fund and operating personnel are saved, improve production efficiency, reduce secondary pollution.
Embodiment two
A kind of cleaning method of wet-cleaning device described in embodiment one is present embodiments provided, it is clear that it includes the first wet method Wash, the second wet-cleaning, the 3rd wet-cleaning, the 4th wet-cleaning and the 5th wet-cleaning；
First wet-cleaning is used for the residue of the crystal column surface after washing away deposition under-clad layer or depositing optical waveguide core layer, Specific method is：
Step 1-1：Utilize the SPM cleaning solution cleaning wafers in SPM rinse baths 8：Under the conditions of 95 °, the wafer is in 4 parts of sulphur 15min is soaked in the SPM cleaning solutions of acid solution and 1 part of hydrogen peroxide solution composition；
Step 1-2：Using the deionized water cleaning wafer 1min in DI rinse baths 2, dried with centrifuge, then dried；
Second wet-cleaning is used to wash away the residue on photolithography plate, and specific method is：
Photolithography plate is cleaned using the stripper in photolithography plate rinse bath 1, if what is selected is peace intelligence AZ GXR-601 high senses Luminosity positive photo glue, then can be cleaned, scavenging period is set with the stripper SPR-600 of Guangdong Ward gas limited company For 10min,；
Residue of 3rd wet-cleaning on the crystal column surface after washing away etch hardmask, specific method are：
Step 3-1：Using the stripper cleaning wafer in wafer photolithography glue rinse bath 3, if that select is peace intelligence AZ GXR-601 high sensitivity positive photo glues, then can be with the stripper SPR-600 of Guangdong Ward gas limited company come clear Wash, scavenging period is set to 10min；
Step 3-2：Using the deionized water cleaning wafer 1min in DI rinse baths 2, dried with centrifuge, then dried；
Residue of 4th wet-cleaning for the crystal column surface after washing away etching optical waveguide core layer, specific method are：
Step 4-1：Utilize the wafer after the metal cleaner etching optical waveguide core layer in hard mask rinse bath 10： The wafer soaks in metal cleaner, if selection can use Guangdong Ward gas share by the use of metal Al as hard mask layer The aluminium special cleaning cleaning of Co., Ltd, main component is H3PO4And HNO3；
Step 4-2：Wafer 1min is cleaned using the deionized water in DI rinse baths 2, is dried with centrifuge, then dried It is dry；
5th wet-cleaning and then the 4th wet-cleaning, for washing away wafer optical waveguide after etching optical waveguide core layer The remaining SiO of line side wall2Particle, specific method are：
Step 5-1：The wafer is cleaned using the silica etching liquid in the BOE rinse baths 5：The wafer is 1 10sec is soaked in the silica etching liquid of part hydrogen fluoride solution and 6 parts of ammonium fluoride solutions compositions；
Step 5-2：The wafer 1min is cleaned using the deionized water in the DI rinse baths 2, is got rid of with the centrifuge It is dry, then dry.
In the present embodiment, photolithography plate rinse bath 1 cannot be shared with wafer photolithography glue rinse bath 3, to avoid new pollutant Pollute photolithography plate.
Embodiment three
A kind of cleaning method of wet-cleaning device described in embodiment one is present embodiments provided, it is clear that it includes the first wet method Wash, the second wet-cleaning, the 3rd wet-cleaning, the 4th wet-cleaning and the 5th wet-cleaning；
First wet-cleaning is used for the residue of the crystal column surface after washing away deposition under-clad layer or depositing optical waveguide core layer, Specific method is：
Step 1-1：Utilize the HPM cleaning solution cleaning wafers in HPM rinse baths 6：Under the conditions of 70 °, wafer is molten in 1 part of hydrochloric acid 10min is soaked in the HPM cleaning solutions of liquid, 1 part of hydrogen peroxide solution and 5 parts of water compositions；
Step 1-2：Using the deionized water cleaning wafer 1min in DI rinse baths 2, dried with centrifuge, then dried；
Second wet-cleaning is used to wash away the residue on photolithography plate, and specific method is：
Photolithography plate is cleaned using the stripper in photolithography plate rinse bath 1, if what is selected is peace intelligence AZ GXR-601 high senses Luminosity positive photo glue, then can be cleaned, scavenging period is set with the stripper SPR-600 of Guangdong Ward gas limited company For 20min,；
Residue of 3rd wet-cleaning on the crystal column surface after washing away etch hardmask, specific method are：
Step 3-1：Using the stripper cleaning wafer in wafer photolithography glue rinse bath 3, if that select is peace intelligence AZ GXR-601 high sensitivity positive photo glues, then can be with the stripper SPR-600 of Guangdong Ward gas limited company come clear Wash, scavenging period is set to 15min；
Step 3-2：Using the deionized water cleaning wafer 1min in DI rinse baths 2, dried with centrifuge, then dried；
Residue of 4th wet-cleaning for the crystal column surface after washing away etching optical waveguide core layer, specific method are：
Step 4-1：Utilize the wafer after the metal cleaner etching optical waveguide core layer in hard mask rinse bath 10： The wafer soaks in metal cleaner, if selection can use Guangdong Ward gas share by the use of metal Al as hard mask layer The aluminium special cleaning cleaning of Co., Ltd, main component is H3PO4And HNO3；
Step 4-2：Wafer 1min is cleaned using the deionized water in DI rinse baths 2, is dried with centrifuge, then dried It is dry；
5th wet-cleaning and then the 4th wet-cleaning, for washing away wafer optical waveguide after etching optical waveguide core layer The remaining SiO of line side wall2Particle, specific method are：
Step 5-1：The wafer is cleaned using the silica etching liquid in the BOE rinse baths 5：The wafer is 1 10sec is soaked in the silica etching liquid of part hydrogen fluoride solution and 6 parts of ammonium fluoride solutions compositions；
Step 5-2：The wafer 1min is cleaned using the deionized water in the DI rinse baths 2, is got rid of with the centrifuge It is dry, then dry.
In the present embodiment, photolithography plate rinse bath 1 cannot be shared with wafer photolithography glue rinse bath 3.
Integrated embodiment two and embodiment three, the application method of wet-cleaning device of the invention are to be based on the cleaning device It is proposed, its first wet-cleaning, the second wet-cleaning, the 3rd wet-cleaning, the 4th wet-cleaning and the 5th wet-cleaning are equal It is by making improvement and optimal design-aside to the prior art, under the automatically controlling of computer system, wafer production can be directed to Each stage carry out the cleaning of wafer respectively, which reduce cleaning step, shorten scavenging period, improve cleaning performance and Cleaning efficiency, thus greatly reduce production cost.
Referring to Fig. 3, based on the application method of the wet-cleaning device, The present invention gives the fiber waveguide after a kind of optimization is brilliant Circle manufacturing process schematic diagram.
The embodiment of the present invention provides for the sake of example and description, and is not exhaustively or by this to send out It is bright to be limited to disclosed form.Many modifications and variations are obvious for the ordinary skill in the art.Choosing It is to more preferably illustrate the principle of the present invention and practical application to select and describe embodiment, and makes those of ordinary skill in the art It will be appreciated that the present invention is so as to design the various embodiments with various modifications suitable for special-purpose.

Claims (10)

  1. A kind of 1. wet-cleaning device for fiber waveguide wafer production, it is characterised in that including device framework, the equipment frame Frame left and right ends are equipped with cassette frame, and the cassette frame is used to hold wafer, and HPM rinse baths, SPM are equipped with the device framework Rinse bath, multiple DI rinse baths, photolithography plate rinse bath, wafer photolithography glue rinse bath, BOE rinse baths, hard mask rinse bath, transhipment Robot and computer；Under the control of the computer, the transport robot transports the wafer on the cassette frame To above-mentioned each rinse bath.
  2. 2. the wet-cleaning device according to claim 1 for fiber waveguide wafer production, it is characterised in that the HPM HPM cleaning solutions and SPM cleaning solutions are respectively equipped with rinse bath and SPM rinse baths, be equipped with the multiple DI rinse baths from Sub- water, stripper is equipped with photolithography plate rinse bath and wafer photolithography the glue rinse bath, dioxy is equipped with the BOE rinse baths SiClx etching liquid, the hard mask rinse bath is interior to be equipped with metal cleaner, and the photolithography plate rinse bath is used to wash away photolithography plate Residue, remaining each described rinse bath is used to wash away the residue on crystal column surface.
  3. 3. the wet-cleaning device according to claim 1 for fiber waveguide wafer production, it is characterised in that the HPM Rinse bath, SPM rinse baths, multiple DI rinse baths, photolithography plate rinse bath, wafer photolithography glue rinse bath, BOE rinse baths and hard mask Rinse bath is equipped with automatic timer, and the HPM rinse baths, SPM rinse baths, wafer photolithography glue rinse bath and hard mask are clear Washing trough is equipped with automatic heating device and thermostat, the automatic timer, automatic heating device and thermostat by Computer controlled automatic, the automatic timer are used for the time for setting cleaning, the automatic heating device and thermostat For being corresponding rinse bath heat supply while cleaning.
  4. 4. the wet-cleaning device according to claim 3 for fiber waveguide wafer production, it is characterised in that the BOE The scavenging period of the BOE rinse baths is set as 5~60sec by the automatic timer of rinse bath, remaining each described rinse bath Automatic timer the scavenging period of corresponding rinse bath is set as 5~20min.
  5. 5. the wet-cleaning device according to claim 3 for fiber waveguide wafer production, it is characterised in that the SPM Cleaning temperature is maintained 80~100 ° by the automatic heating device and thermostat of rinse bath, the HPM rinse baths, wafer photolithography Glue rinse bath and hard mask rinse bath are equipped with automatic heating device and thermostat and cleaning temperature are maintained 60~80 °.
  6. 6. the wet-cleaning device according to claim 1 for fiber waveguide wafer production, it is characterised in that the DI is clear The quantity of washing trough is four.
  7. 7. the wet-cleaning device according to claim 6 for fiber waveguide wafer production, it is characterised in that the equipment Frame includes the first frame and the second frame；
    The photolithography plate rinse bath, wafer photolithography glue rinse bath, BOE rinse baths and two DI rinse baths may be contained within institute State in the first frame, two DI rinse baths, which are respectively separated, is arranged at the photolithography plate rinse bath, wafer photolithography glue rinse bath Between BOE rinse baths；
    The HPM rinse baths, SPM rinse baths, hard mask rinse bath and DI rinse baths described in other two may be contained within described In second frame, DI rinse baths described in other two, which are respectively separated, is arranged at the HPM rinse baths, SPM rinse baths and hard mask Between rinse bath；
    And/or the transport robot is arranged on the boundary line of first frame and the second frame；
    And/or the cassette frame is connected with dryer, the wafer on the cassette frame through being transferred to drying automatically after over cleaning Machine performs spin-drying operation.
  8. 8. the wet-cleaning device according to claim 1 for fiber waveguide wafer production, it is characterised in that the photoetching Plate rinse bath, wafer photolithography glue rinse bath, the material of hard mask rinse bath and BOE rinse baths are PTFE, the device framework And the material of multiple DI rinse baths is PTFE or PVDF, the material of the HPM rinse baths and SPM rinse baths is stone English.
  9. 9. the cleaning method of the wet-cleaning device any one of a kind of claim 1-8, it is characterised in that in the meter Under the control of calculation machine, the wafer on the cassette frame is transported to above-mentioned each rinse bath by the transport robot, is automatically performed Cleaning.
  10. 10. the cleaning method of wet-cleaning device according to claim 9, it is characterised in that specifically include：First wet method Cleaning, the second wet-cleaning, the 3rd wet-cleaning, the 4th wet-cleaning and the 5th wet-cleaning；
    First wet-cleaning is used for the residue of the crystal column surface after washing away deposition under-clad layer or depositing optical waveguide core layer, Specific method is：
    Step 1-1：The wafer is cleaned using the SPM cleaning solutions in the SPM rinse baths：Under the conditions of 95~100 °, the crystalline substance Circle soaks 15~20min in the SPM cleaning solutions of 4 parts of sulfuric acid solutions and 1 part of hydrogen peroxide solution composition；It is or clear using the HPM HPM cleaning solutions in washing trough clean the wafer：Under the conditions of 70~75 °, the wafer is water-soluble in 1 part of hydrochloric acid solution, 1 part of dioxygen 10~15min is soaked in the HPM cleaning solutions of liquid and 5 parts of water compositions；
    Step 1-2：1~the 3min of wafer is cleaned using the deionized water in the DI rinse baths, is dried with the centrifuge, Then dry；
    And/or second wet-cleaning is used to wash away the residue on the photolithography plate, specific method is：
    5~the 20min of photolithography plate is cleaned using the stripper in the photolithography plate rinse bath；
    And/or residue of the 3rd wet-cleaning on the crystal column surface after washing away etch hardmask, specific method For：
    Step 3-1：5~the 20min of wafer is cleaned using the stripper in the wafer photolithography glue rinse bath；
    Step 3-2：1~the 3min of wafer is cleaned using the deionized water in the DI rinse baths, is dried with the centrifuge, Then dry；
    And/or residue of the 4th wet-cleaning for the crystal column surface after washing away etching optical waveguide core layer, specific side Method is：
    Step 4-1：Utilize the crystalline substance after the metal cleaner cleaning etching optical waveguide core layer in the hard mask rinse bath Circle：The wafer soaks in the metal cleaner；
    Step 4-2：1~3min of the wafer is cleaned using the deionized water in the DI rinse baths, is dried with the centrifuge, so After dry；
    And/or the 5th wet-cleaning and then the 4th wet-cleaning, it is brilliant after etching optical waveguide core layer for washing away The remaining SiO of circle optical waveguide line side wall2Particle, specific method are：
    Step 5-1：The wafer is cleaned using the silica etching liquid in the BOE rinse baths：The wafer is in 1 part of fluorination 10~15sec is soaked in the silica etching liquid of hydrogen solution and 6 parts of ammonium fluoride solution compositions；
    Step 5-2：1~the 3min of wafer is cleaned using the deionized water in the DI rinse baths, is dried with the centrifuge, Then dry；
    And/or the photolithography plate rinse bath cannot be shared with wafer photolithography glue rinse bath.
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CN106449475A (en) * 2016-09-29 2017-02-22 无锡宏纳科技有限公司 Import structure for wafers
CN108873603A (en) * 2018-08-21 2018-11-23 惠科股份有限公司 The devices and methods therefor of cleaning light shield
CN109244003A (en) * 2018-08-24 2019-01-18 江苏晶睿光电科技有限公司 A kind of after-treatment system for wafer production
CN110648948A (en) * 2019-09-27 2020-01-03 北京半导体专用设备研究所（中国电子科技集团公司第四十五研究所） Quartz cleaning equipment
CN115527884B (en) * 2021-12-29 2023-09-05 比亚迪股份有限公司 Wafer cleaning device and method

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