JP2016040826A - Process separation type substrate processing apparatus and processing method - Google Patents
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- 238000000034 method Methods 0.000 title claims abstract description 159
- 239000000758 substrate Substances 0.000 title claims abstract description 158
- 238000012545 processing Methods 0.000 title claims abstract description 153
- 238000000926 separation method Methods 0.000 title claims abstract description 28
- 238000003672 processing method Methods 0.000 title claims abstract description 17
- 239000007788 liquid Substances 0.000 claims abstract description 114
- 238000004140 cleaning Methods 0.000 claims abstract description 65
- 238000012546 transfer Methods 0.000 claims abstract description 48
- 238000005530 etching Methods 0.000 claims abstract description 29
- 238000001035 drying Methods 0.000 claims description 32
- 239000013078 crystal Substances 0.000 claims description 28
- 239000000126 substance Substances 0.000 claims description 23
- 230000015572 biosynthetic process Effects 0.000 claims description 9
- 238000010438 heat treatment Methods 0.000 claims description 8
- 238000002425 crystallisation Methods 0.000 abstract 1
- 230000008025 crystallization Effects 0.000 abstract 1
- 235000012431 wafers Nutrition 0.000 description 16
- 239000003517 fume Substances 0.000 description 6
- 238000001039 wet etching Methods 0.000 description 6
- DDFHBQSCUXNBSA-UHFFFAOYSA-N 5-(5-carboxythiophen-2-yl)thiophene-2-carboxylic acid Chemical compound S1C(C(=O)O)=CC=C1C1=CC=C(C(O)=O)S1 DDFHBQSCUXNBSA-UHFFFAOYSA-N 0.000 description 5
- 238000011109 contamination Methods 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 4
- 230000003749 cleanliness Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000005406 washing Methods 0.000 description 3
- NLXLAEXVIDQMFP-UHFFFAOYSA-N Ammonia chloride Chemical compound [NH4+].[Cl-] NLXLAEXVIDQMFP-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 239000000356 contaminant Substances 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 238000012864 cross contamination Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 238000012423 maintenance Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 1
- 229910017855 NH 4 F Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 235000019270 ammonium chloride Nutrition 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 238000001311 chemical methods and process Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000003912 environmental pollution Methods 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- XEMZLVDIUVCKGL-UHFFFAOYSA-N hydrogen peroxide;sulfuric acid Chemical compound OO.OS(O)(=O)=O XEMZLVDIUVCKGL-UHFFFAOYSA-N 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
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- 238000001556 precipitation Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000009987 spinning Methods 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67161—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers
- H01L21/67173—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers in-line arrangement
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
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- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67023—Apparatus for fluid treatment for general liquid treatment, e.g. etching followed by cleaning
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67703—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations
- H01L21/67718—Changing orientation of the substrate, e.g. from a horizontal position to a vertical position
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Abstract
Description
本発明は、半導体ウエハーのような基板処理装置及び処理方法に関し、更に詳しくは、エッチング工程のような液処理工程と洗浄工程を分離し、異なるチャンバで行うことができる工程分離型基板処理装置及び処理方法に関するものである。 The present invention relates to a substrate processing apparatus such as a semiconductor wafer and a processing method, and more specifically, a process separation type substrate processing apparatus capable of separating a liquid processing process such as an etching process and a cleaning process and performing them in different chambers, and It relates to a processing method.
一般に、半導体素子は、シリコンウエハーのような基板に対して、写真工程（photo process）、エッチング工程（etching process）、イオン注入工程（ion implantation process）、そして、蒸着工程（Deposition process）などのような様々な工程を通して形成される。 In general, a semiconductor device is used for a substrate such as a silicon wafer, such as a photo process, an etching process, an ion implantation process, and a deposition process. It is formed through various processes.
そして、それぞれの工程を行う過程で、基板に付着された各種汚染物を除去するために、洗浄工程が行われる。洗浄工程は、薬液（chemical）で基板上の汚染物質を除去する薬液処理工程、純水（pure water）で基板上に残留する薬液を除去する洗浄工程（wet cleaning process）、そして、乾燥流体を供給し、基板表面に残留する純水を除去する乾燥工程（drying process）を含む。 In the course of performing each process, a cleaning process is performed to remove various contaminants attached to the substrate. The cleaning process includes a chemical process for removing contaminants on the substrate with chemical, a wet cleaning process for removing chemical remaining on the substrate with pure water, and a dry fluid. It includes a drying process for supplying and removing pure water remaining on the substrate surface.
更に詳しく説明すると、半導体素子の製造工程で、エッチング工程は、基板に形成された処理対象膜上に所定のパターンでレジスト膜が形成され、このレジスト膜をマスクとしてエッチング、イオン注入などの処理が、前記処理対象膜に施され、不要になったレジスト膜を基板上から除去する。 More specifically, in the manufacturing process of a semiconductor device, in the etching process, a resist film is formed in a predetermined pattern on the processing target film formed on the substrate, and etching, ion implantation, and the like are performed using the resist film as a mask. Then, the resist film which has been applied to the film to be processed and is no longer needed is removed from the substrate.
前記工程のための基板処理方式は、大きく乾式（Dry）処理方式と、湿式（Wet）処理方式とに区分される。この中で、湿式処理方式は、種々の薬液を用いた方式であり、複数の基板を同時に処理するバッチ式（batch type）装置と、一枚単位で基板を処理する枚葉式（single wafer type）装置とに区分される。 Substrate processing methods for the process are roughly classified into a dry processing method and a wet processing method. Among them, the wet processing method is a method using various chemical solutions, and a batch type apparatus that processes a plurality of substrates simultaneously, and a single wafer type that processes substrates in a single unit. ) It is divided into equipment.
バッチ式処理装置は、洗浄液が収納された洗浄槽に複数の基板を一度に浸漬し、汚染源を除去する。しかし、従来のバッチ式処理装置は、基板の大型化に伴い、その対応が容易でなく、洗浄液の使用が多いという短所がある。 The batch type processing apparatus immerses a plurality of substrates at once in a cleaning tank in which a cleaning liquid is stored to remove a contamination source. However, the conventional batch type processing apparatus has the disadvantages that it is not easy to cope with the increase in the size of the substrate, and that the cleaning liquid is often used.
また、バッチ式処理装置で工程中に基板が破損される場合には、洗浄槽内にある基板全体に影響を及ぼすことになるので、多量の基板不良が生ずる恐れがあった。 Further, when the substrate is damaged during the process in the batch type processing apparatus, the entire substrate in the cleaning tank is affected, so that a large number of substrate defects may occur.
バッチ式ウエハー洗浄方法は、一度に複数枚のウエハーを洗浄するため、洗浄時間が短く、高い処理率を有していることから生産効率が高いが、ウエハー間のクロス（cross）汚染により洗浄効率が劣り、ウエハーを複数枚入れ、一度に処理することでウエハー処理後、工程結果が均一にならなく、多量の洗浄液を使用することによってコストアップとなり、環境汚染を誘発するという問題点があった。 The batch type wafer cleaning method cleans multiple wafers at a time, so the cleaning time is short and the processing rate is high, so the production efficiency is high, but the cleaning efficiency is due to cross contamination between wafers. Inferior, the process result is not uniform after wafer processing by inserting multiple wafers at the same time, and there is a problem that the use of a large amount of cleaning liquid increases the cost and induces environmental pollution. .
また、枚葉式ウエハー洗浄方法は、単一のウエハーに対して、少量の洗浄液を用いて洗浄する方法であり、洗浄効率が低い代わりに、ウエハー間のクロス汚染がなく、ウエハーを一枚ずつ入れ、同条件で処理するので、工程後、ウエハー間処理後、工程結果が均一になり、高清浄度雰囲気で洗浄が行われるので、洗浄効率が高いという長所がある。 In addition, the single wafer cleaning method is a method of cleaning a single wafer using a small amount of cleaning liquid. Instead of low cleaning efficiency, there is no cross-contamination between wafers, and the wafers are one by one. In addition, since the process is performed under the same conditions, after the process and the inter-wafer process, the process result becomes uniform, and the cleaning is performed in a high cleanliness atmosphere, so that the cleaning efficiency is high.
特に、ウエハーの大口径化に伴い、バッチ式洗浄方法には限界があり、高集積化されて行く半導体素子においては、洗浄効率が更に重要になり、枚葉式洗浄方法の利用が次第に増加してきており、最近には、枚葉式処理装置が好まれている。 In particular, with the increase in wafer diameter, batch-type cleaning methods are limited, and in semiconductor devices that are highly integrated, cleaning efficiency becomes more important, and the use of single-wafer-type cleaning methods is gradually increasing. Recently, a single wafer processing apparatus is preferred.
枚葉式処理装置は、一枚の基板単位で処理する方式であり、高速回転させた基板表面に、処理液及び洗浄液又は乾燥ガスを噴射することで、基板の回転による遠心力と洗浄液の噴射に伴う圧力を利用して汚染源を除去するスピン方式（spinning method）でエッチング及び洗浄が進められる。 The single-wafer processing apparatus is a method of processing in units of one substrate. By spraying the processing liquid and the cleaning liquid or the dry gas onto the substrate surface rotated at a high speed, the centrifugal force and the cleaning liquid are jetted by rotating the substrate. Etching and cleaning are performed by a spinning method that removes the contamination source by using the pressure accompanying the process.
通常、枚葉式処理装置は、基板が収納され、洗浄工程が行われるチャンバと、基板を固定させた状態で回転するスピンチャック及び基板に薬液とリンス液及び乾燥ガスなどを含む洗浄液を供給するためのノズルアセンブリーを含む。 In general, a single wafer processing apparatus supplies a cleaning liquid containing a chemical solution, a rinsing liquid, a dry gas, and the like to a chamber in which a substrate is stored and a cleaning process is performed, a spin chuck that rotates while the substrate is fixed, and the substrate. Including a nozzle assembly.
即ち、従来の一般的な枚葉式装置の場合、基板をチャンバに挿入後、エッチング、洗浄及び乾燥工程など、前述した一連の工程を一つのチャンバ内で行うことを特徴とする。 That is, the conventional general single wafer type apparatus is characterized in that after the substrate is inserted into the chamber, the above-described series of steps such as etching, cleaning and drying steps are performed in one chamber.
最近には、レジスト膜の除去方法としてＳＰＭ処理がよく利用されており、ＳＰＭ処理は、硫酸と過酸化水素水とを混合し得た高温のＳＰＭ（Sulfuric Acid Hydrogen Peroxide Mixture）をレジスト膜に供給することで、行なわれる。 Recently, SPM treatment is often used as a method for removing a resist film, and the SPM treatment supplies a high-temperature SPM (Sulfuric Acid Hydrogen Peroxide Mixture) obtained by mixing sulfuric acid and hydrogen peroxide solution to the resist film. Is done.
一般に、ＳＰＭ工程の場合、ＳＰＭ処理後、ＳＣ１（ＮＨ４ＯＨ／Ｈ２Ｏ２／Ｈ２Ｏ）処理工程を行った後、乾燥することを特徴としているが、ＳＰＭは酸であり、ＳＣ１はアルカリ性薬液を用いているので、一つのチャンバ内で工程を行う場合、結晶が生じることがある。 In general, in the case of the SPM process, after the SPM treatment, the SC1 (NH 4 OH / H 2 O 2 / H 2 O) treatment process is performed and then dried. However, the SPM is an acid, and the SC1 is an alkaline chemical solution. When the process is performed in one chamber, crystals may be formed.
このようなチャンバ内に酸−アルカリ結晶が発生した場合、結晶による排気部又は排液部に詰まり現象が生じ、チャンバ内部結晶が基板に再付着することによる汚染が非常に深刻な問題になる恐れがある。 When an acid-alkali crystal is generated in such a chamber, a clogging phenomenon may occur in the exhaust part or drainage part due to the crystal, and contamination due to redeposition of the crystal inside the chamber to the substrate may cause a very serious problem. There is.
これは、基板処理装置全体の寿命又はメンテナンスに非常に否定的な要因になり、特に基板の結晶再付着は全体的な基板生産収率を落とす致命的な要因になる。 This is a very negative factor in the lifetime or maintenance of the entire substrate processing apparatus, and in particular, the crystal reattachment of the substrate becomes a fatal factor that lowers the overall substrate production yield.
しかも、ＮＨ４Ｆ及びＨＦを含むＬＡＬＢＯＥ（Low ammonium fluoride low surface tension Buffered oxide etchant）のようなフッ化アンモニウムが含まれた薬液を用いる場合、当該薬液のみを使用する工程中にも結晶の析出が生じることがある。 In addition, when a chemical solution containing ammonium fluoride such as LALBOE (Low ammonium fluoride low surface tension Buffered oxide etchant) containing NH 4 F and HF is used, crystals are precipitated even during the process using only the chemical solution. May occur.
このような結晶が生成され得る工程の場合、後続の他の液処理工程又は洗浄及び乾燥工程に影響を及ぼし、前述した枚葉式装置で結晶による様々な問題が生じており、これに対する解決が求められていた。 In the process where such crystals can be produced, it affects other subsequent liquid treatment processes or washing and drying processes, and various problems are caused by the crystals in the single-wafer type apparatus described above. It was sought after.
本発明は、前述したような点を勘案して案出されたものであり、従来の枚葉式基板処理装置において、処理液工程時、結晶生成に伴う問題点を克服するために結晶生成を抑制できるように工程を分離して処理できる工程分離型基板処理装置及び処理方法を提供することに目的がある。 The present invention has been devised in consideration of the above-described points. In a conventional single-wafer substrate processing apparatus, crystal generation is performed in order to overcome problems associated with crystal generation during a processing liquid process. An object is to provide a process-separated substrate processing apparatus and a processing method capable of separating and processing the processes so as to be suppressed.
前記技術的課題を達成するための本発明に係る工程分離型基板処理装置は、基板に第１処理液を供給する液処理工程を含んで行う第１チャンバと、前記基板に第２処理液を供給する液処理工程を含んで行う第２チャンバと、前記第１及び第２チャンバ間に前記基板を移送する移送ユニットと、を含み、前記第１チャンバと第２チャンバで行われる工程は、チャンバ内結晶生成を抑制するように分離されていることを特徴とする。 In order to achieve the above technical problem, a process separation type substrate processing apparatus according to the present invention includes a first chamber that includes a liquid processing step for supplying a first processing liquid to a substrate, and a second processing liquid for the substrate. A second chamber that includes a liquid treatment process to be supplied; and a transfer unit that transfers the substrate between the first and second chambers, and the process performed in the first chamber and the second chamber includes: It is characterized by being separated so as to suppress the formation of inner crystals.
また、前記第１処理液は、液処理工程時結晶が生成され得る薬液であるか、前記第１処理液と第２処理液は、互いに反応して結晶が生成され得る薬液であることを特徴とする。 In addition, the first processing liquid is a chemical liquid that can generate crystals during a liquid processing step, or the first processing liquid and the second processing liquid are chemical liquids that can react with each other to generate crystals. And
従って、前記第１処理液は、エッチング工程を行うエッチング溶液又はＰＲストリップ処理が可能な薬液であり、前記第２処理液は、ＳＣ１溶液であることを特徴とする。具体的に、前記第１処理液は、ＨＦ、ＬＡＬ、ＳＰＭ、Ｈ３ＰＯ４のいずれか１つを含む薬液であり、前記第２処理液は、ＳＣ１溶液を含む薬液である。 Accordingly, the first processing solution is an etching solution for performing an etching process or a chemical solution capable of PR strip processing, and the second processing solution is an SC1 solution. Specifically, the first processing liquid is a chemical liquid including any one of HF, LAL, SPM, and H 3 PO 4 , and the second processing liquid is a chemical liquid including an SC1 solution.
また、前記第１チャンバは、更に、基板を加熱する加熱手段を含むことを特徴とする。 The first chamber may further include a heating unit that heats the substrate.
しかも、前記第２チャンバは、洗浄工程遂行後、乾燥工程を更に行うことを特徴とする。 In addition, the second chamber may be further subjected to a drying process after the cleaning process.
または、前記第１チャンバで行われる工程は、更に、洗浄及び乾燥工程を含み、前記第１チャンバで処理される基板は、完全乾燥以前状態で前記第２チャンバへ移送されることを特徴とする。 Alternatively, the process performed in the first chamber further includes a cleaning and drying process, and the substrate processed in the first chamber is transferred to the second chamber in a state before complete drying. .
また、前記第１チャンバ及び第２チャンバは、上下に配置されるか、前記第１チャンバ及び第２チャンバは、左右平行に配置され、前記移送ユニットは、前記第１及び第２チャンバ間に前記基板を移送することを特徴とする。 In addition, the first chamber and the second chamber may be arranged vertically, or the first chamber and the second chamber may be arranged parallel to each other, and the transfer unit may be disposed between the first and second chambers. The substrate is transferred.
また、前記第１チャンバの液処理工程は、基板下面の液処理工程であり、前記移送ユニットは、前記第１及び第２チャンバ間に前記基板を反転して、移送する反転移送ユニットであることを特徴とする。このとき、用いられる前記第１処理液はＳＰＭ又はＨ３ＰＯ４であり、前記第２処理液はＳＣ１である。 The liquid processing step in the first chamber is a liquid processing step on the lower surface of the substrate, and the transfer unit is a reverse transfer unit that reverses and transfers the substrate between the first and second chambers. It is characterized by. At this time, the first treatment liquid used is SPM or H 3 PO 4 , and the second treatment liquid is SC1.
また、更に、前記基板を洗浄及び乾燥する工程を行う第３チャンバを含み、前記移送ユニットは、第１、第２及び第３チャンバ間に前記基板を移送する移送ユニットで構成されてもよい。 Furthermore, it may include a third chamber for performing a process of cleaning and drying the substrate, and the transfer unit may be a transfer unit that transfers the substrate between the first, second, and third chambers.
前記技術的課題を達成するための本発明に係る工程分離型基板処理方法は、第１チャンバで行われる基板に、第１処理液を供給する第１液処理ステップと、前記基板を前記第１チャンバから第２チャンバへ移送する基板移送ステップと、第２チャンバで行われる前記基板に、第２処理液を供給する第２液処理ステップと、を含み、前記第１液処理ステップと第２液処理ステップで行われる工程は、チャンバ内結晶生成を抑制するように分離されていることを特徴とする。 A process separation type substrate processing method according to the present invention for achieving the technical problem includes a first liquid processing step of supplying a first processing liquid to a substrate performed in a first chamber; A substrate transfer step of transferring from the chamber to the second chamber; and a second liquid processing step of supplying a second processing liquid to the substrate performed in the second chamber, wherein the first liquid processing step and the second liquid The processes performed in the processing steps are characterized by being separated so as to suppress the formation of crystals in the chamber.
本発明に係る工程分離型基板処理装置及び基板処理方法は、エッチング工程のような基板の液処理工程とＰＲストリップのような基板処理工程又は洗浄及び乾燥工程が別途のチャンバで行われるので、従来の枚葉式基板処理装置で全工程を処理することに比べて、チャンバ内結晶生成に伴う基板汚染を基本的に防止することができる長所がある。 In the process separation type substrate processing apparatus and the substrate processing method according to the present invention, a substrate liquid processing process such as an etching process and a substrate processing process such as a PR strip or a cleaning and drying process are performed in separate chambers. Compared to processing all the steps with this single-wafer type substrate processing apparatus, there is an advantage that substrate contamination accompanying crystal formation in the chamber can be basically prevented.
また、フッ化アンモニウムが含まれた処理液を用いる工程も、他の工程と分離し、それぞれのチャンバで行われているので、結晶が生成され得る工程とその他の工程が分離され、結晶による基板汚染を防止する効果を奏する。 In addition, the process using the treatment liquid containing ammonium fluoride is also performed in each chamber separately from the other processes. Therefore, the process in which crystals can be generated and the other processes are separated from each other. It has the effect of preventing contamination.
また、第１チャンバで基板の下面を処理し、液処理工程時に発生するヒューム（fume）がチャンバ内部の上部に発散することが抑制され、このようなヒュームをチャンバ下部から引き抜けば、従来基板の上面を液処理することに比べて、チャンバ内部雰囲気をより清潔に保持することができるので、基板処理の清浄度が高められる効果を奏する。 In addition, if the lower surface of the substrate is processed in the first chamber and the fume generated during the liquid processing process is prevented from diffusing to the upper part of the chamber, the conventional substrate can be obtained by pulling out such a fume from the lower part of the chamber. Compared with the liquid processing of the upper surface of the substrate, the atmosphere inside the chamber can be kept more clean, so that the cleanliness of the substrate processing is improved.
また、第１チャンバから第２チャンバへと基板を移送する移送ユニットを、基板を反転できる反転移送ユニットで構成すれば、第２チャンバでは基板の処理面を上部にして、従来方式に従って効率的に洗浄及び乾燥して、基板の収率が挙げられる効果を奏する。 In addition, if the transfer unit for transferring the substrate from the first chamber to the second chamber is configured by an inversion transfer unit that can invert the substrate, the second chamber can be efficiently processed according to the conventional method with the substrate processing surface at the top. Washing and drying yields the effect of increasing the yield of the substrate.
以下、本発明の分離型基板処理装置及び処理方法を詳しく説明する。 Hereinafter, the separation type substrate processing apparatus and the processing method of the present invention will be described in detail.
図１を参照すれば、本発明の一実施例に係る工程分離型基板処理装置は、基板に第１処理液を供給する液処理工程を含んで行う第１チャンバ１００、前記基板に第２処理液を供給する液処理工程を含んで行う第２チャンバ２００及び前記第１及び第２チャンバ１００、２００間に前記基板を移送する移送ユニット３００を含む。
Referring to FIG. 1, a process separation type substrate processing apparatus according to an embodiment of the present invention includes a
前記第１チャンバ１００と第２チャンバ２００は、基板に第１、第２処理液を供給し、液処理工程を行う内部空間を有する要素であり、従来の枚葉式基板処理装置で提供されるチャンバ形態で提供されてもよい。
The
また、前記第１チャンバ１００及び第２チャンバ２００は、それぞれ処理液供給装置を含み、基板の液処理工程を行うことができ、前記第１チャンバ１００と第２チャンバ２００で行われる工程は、チャンバ内結晶生成を抑制できるように分離されていることを特徴とする。
Each of the
従って、前記第１処理液は、液処理工程時、結晶が生成され得る薬液であるか、前記第１処理液と第２処理液は互いに反応して結晶が生成され得る薬液であってもよい。 Accordingly, the first processing liquid may be a chemical liquid that can generate crystals during the liquid processing step, or the first processing liquid and the second processing liquid may react with each other to generate crystals. .
図２を参照すれば、前記第１チャンバ１００内で、基板に供給される第１処理液は、エッチング工程を行うエッチング溶液又はＰＲストリップ処理が可能な処理液であってもよく、前記第２処理液は、ＳＣ１溶液であることを特徴とする。
Referring to FIG. 2, the first processing solution supplied to the substrate in the
前述したように、ＳＰＭ処理液は酸性であり、ＳＣ１処理液はアルカリ性であるため、それらを用いた工程を前記第１チャンバ１００及び第２チャンバ２００で、それぞれ行っているので、結晶生成を基本的に抑制することができる。
As described above, since the SPM treatment liquid is acidic and the SC1 treatment liquid is alkaline, the processes using them are performed in the
図３を参照すれば、Ｈ４Ｆ及びＨＦを含むＬＡＬＢＯＥ（Low ammonium fluoride low surface tension Buffered oxide etchant）のようなフッ化アンモニウムが含まれた薬液を用いる場合、それ自体から結晶析出が生じ得るので、このような薬液を第１処理液にして別途の第１チャンバ１００で行い、他の工程は、第２チャンバ２００で行っているので、他の工程における結晶生成による影響を遮断することができる。
Referring to FIG. 3, when using a chemical solution containing ammonium fluoride such as LALBOE (Low ammonium fluoride low surface tension Buffered oxide etchant) containing H 4 F and HF, crystal precipitation may occur from itself. Since such a chemical solution is used as the first processing solution and is performed in the separate
また、前記第１チャンバ１００は、更に基板を加熱する加熱手段４００を含んでいてもよく、この時、前記第１チャンバ１００で行われる第１処理液がＳＰＭ処理液の場合、基板に供給されるＳＰＭ処理液が加熱されるので、前記第１チャンバ１００で高温ＳＰＭエッチング工程を行うことができる。
The
前記加熱手段４００は、基板及び供給されるＳＰＭ処理液を、エッチング効率が挙げられるように温度を上昇する役割を果たし、様々な形状のヒーター又はこれと類似な手段で提供されてもよい。
The
また、前記第１チャンバ１００で行われる工程は、更に洗浄及び乾燥工程を含んでいてもよく、前記第１チャンバで処理される基板は、完全乾燥以前状態で前記第２チャンバへ移送されることを特徴とする。
In addition, the process performed in the
前記第１チャンバ１００は、湿式エッチング工程を処理し、湿式エッチング工程は、最終洗浄及び乾燥ステップ以前に、エッチング工程から出る有機物又は金属副産物を一次的に除去する洗浄及び乾燥工程が含まれるのが一般的である。このような湿式エッチング工程での洗浄及び乾燥は、全ての残留物が除去された状態ではなく、最終洗浄及び乾燥工程で残りの残留物を除去するようになる。
The
本発明に係る工程分離型基板処理装置は、湿式エッチング工程と最終洗浄及び乾燥が、それぞれ異なるチャンバで行われているので、湿式エッチング工程から一次的に洗浄及び乾燥時、基板が完全乾燥されてしまえば、基板に残留物が固着される問題が生じる恐れがある。 In the process separation type substrate processing apparatus according to the present invention, since the wet etching process and the final cleaning and drying are performed in different chambers, the substrate is completely dried at the time of cleaning and drying from the wet etching process. If this is the case, there may be a problem that the residue adheres to the substrate.
従って、第１チャンバで基板は、完全乾燥状態でない濡れた状態で第２チャンバに移送され、最終洗浄ステップと乾燥ステップへと進められることが好ましく、第２チャンバで洗浄効果を上げることができる長所がある。 Accordingly, it is preferable that the substrate is transferred to the second chamber in a wet state that is not completely dry in the first chamber, and is advanced to a final cleaning step and a drying step, and the cleaning effect can be improved in the second chamber. There is.
図２〜図３を参照すれば、前記第１チャンバ１００及び第２チャンバ２００は上下に配置され、前記移送ユニット３００は前記第１及び第２チャンバ間に前記基板を上下に互いに移送する構造で提供されてもよい。
Referring to FIGS. 2 to 3, the
図４を参照すれば、前記第１チャンバ１００及び第２チャンバ２００は、左右平行に配置され、前記移送ユニット３００は前記第１及び第２チャンバ間に前記基板を平行に移送する構造であってもよい。
Referring to FIG. 4, the
このような第１チャンバ１００及び第２チャンバ２００の配置は、それぞれのチャンバが行う工程に応じて、チャンバの高さが変わるので、全体システムの高さを均一に構成するために上下又は平行に配置することが好ましい。
Such arrangement of the
例えば、ＳＰＭ工程を処理するチャンバは、その他の洗浄及び乾燥工程を処理するチャンバに比べて、内部空間を更に必要としており、ＳＰＭ工程を処理するチャンバを上下に構成し、洗浄及び乾燥工程を処理するチャンバを別途に上下に構成すれば、左右チャンバの高さが変わるので、ＳＰＭ工程を処理する第１チャンバと洗浄及び乾燥工程を処理する第２チャンバを上下配置し、全体的なチャンバシステムの高さを均一にすることができる。 For example, the chamber for processing the SPM process requires more internal space than the chamber for processing other cleaning and drying processes, and the chamber for processing the SPM process is configured up and down to process the cleaning and drying processes. Since the height of the left and right chambers changes if the chambers to be separately configured are vertically arranged, the first chamber for processing the SPM process and the second chamber for processing the cleaning and drying processes are arranged vertically, and the overall chamber system The height can be made uniform.
また、前記第１チャンバ１００の液処理工程は、基板下面の液処理工程であり、前記移送ユニット３００は前記第１及び第２チャンバ間に前記基板を反転して移送する反転移送ユニット３１０であることを特徴とする。
In addition, the liquid processing step in the
前述のように、前記第１チャンバ１００は、主に湿式エッチング工程が行われており、エッチング工程は、その特性上、基板表面の特定成分を処理液で除去することになるので、相当なヒュームが発生することになり、ヒュームが上昇しながらチャンバ内部が汚染される原因になる。
As described above, the
従って、このような基板処理面を下向けにして処理すれば、ヒュームの上昇を抑制でき、チャンバ下部からヒュームを排気すれば、基板処理面を上面にする従来方式に比べ、チャンバ内部を清潔に保持管理することができる。 Therefore, if processing is performed with such a substrate processing surface facing downward, the rise of fumes can be suppressed, and if the fumes are exhausted from the lower portion of the chamber, the inside of the chamber can be cleaned more cleanly than in the conventional method where the substrate processing surface is the upper surface. Can be maintained.
また、前記第２チャンバ２００は、主に洗浄工程を行っており、洗浄工程は基板の処理面を上面にし、洗浄処理することが効率的であるため、第１チャンバ１００で処理された基板を反転し、処理面を上面にし、第２チャンバ２００に挿入することが必要である。
In addition, the
従って、前記移送ユニット３００を、基板を反転し、移送する反転移送ユニット３１０にて提供し、第１チャンバ１００及び第２チャンバ２００を介して基板のエッチング及び洗浄乾燥工程が行われる構成である。
Accordingly, the
本発明は、第１処理液によるヒューム発生量のような薬液特性によって基板を平行状態で移送する正常移送方法と、基板を反転して移送する反転移送方法のいずれか１つの方法を選択することができる。下記表１に処理液の種類による基板移送方法を分類して例示した。
また、図５を参照すれば、前記基板を洗浄及び乾燥する工程を行う第３チャンバ５００を更に含む構成であってもよく、この時、前記第２チャンバ２００は前記基板に第２処理液を供給する液処理工程を行う。
Referring to FIG. 5, the substrate may further include a
即ち、第１チャンバ１００では、ＳＰＭのような第１処理液を供給する液処理工程であるエッチング工程を行い、前記第２チャンバ２００はＳＣ１のような第２処理液を供給する液処理工程を行い、別途として前記第３チャンバ５００で最終洗浄及び乾燥工程を分離し、基板処理工程を行うように構成される。
That is, the
このような構成により各工程に別途のチャンバを細分し、担当するようにしているので、基板処理工程間における結晶生成を抑制し、基板の清浄度を上げることができ、基板処理装置のメンテナンスが容易になる長所がある。 With such a configuration, separate chambers are subdivided and assigned to each process, so that crystal formation during the substrate processing process can be suppressed, the cleanliness of the substrate can be increased, and maintenance of the substrate processing apparatus can be performed. There are advantages that make it easier.
以下、本発明の一実施例に係る工程分離型基板処理装置を活用した工程分離型基板処理方法について説明する。第１チャンバで行われる基板に第１処理液を供給する第１液処理ステップ、第２チャンバで行われる前記基板に第２処理液を供給する第２液処理ステップを含み、前記第１液処理ステップと第２液処理ステップで行われる工程は、チャンバ内の結晶生成を抑制できるように分離されていることを特徴とする。 Hereinafter, a process separation type substrate processing method using a process separation type substrate processing apparatus according to an embodiment of the present invention will be described. A first liquid processing step for supplying a first processing liquid to the substrate performed in the first chamber; a second liquid processing step for supplying a second processing liquid to the substrate performed in the second chamber; The processes performed in the step and the second liquid treatment step are characterized by being separated so as to suppress crystal formation in the chamber.
また、前記第２チャンバで行われる洗浄及び乾燥ステップを更に含み、第１チャンバではエッチング工程又はＰＲストリップ工程を主に処理し、第２チャンバでは残りの液処理工程及び洗浄工程を処理し、前記基板を前記第１チャンバから第２チャンバへと移送する基板移送ステップを通して全体的な基板処理工程を行うことができる。 The method further includes a cleaning and drying step performed in the second chamber, wherein the first chamber mainly processes an etching process or a PR strip process, and the second chamber processes the remaining liquid processing process and the cleaning process. The entire substrate processing process can be performed through a substrate transfer step of transferring the substrate from the first chamber to the second chamber.
さらに、別途の第３チャンバで行われる洗浄ステップを含み、第１チャンバではエッチング工程又はＰＲストリップ工程を主に処理し、第２チャンバでは残りの液処理工程を行い、第３チャンバで最終洗浄工程を処理することができる。 Further, it includes a cleaning step performed in a separate third chamber. The first chamber mainly performs the etching process or the PR strip process, the second chamber performs the remaining liquid processing process, and the third chamber performs the final cleaning process. Can be processed.
この時、前記基板移送ステップは、前記基板を前記第１チャンバ、第２チャンバ及び第３チャンバへと移送する構成であってもよい。 At this time, the substrate transfer step may transfer the substrate to the first chamber, the second chamber, and the third chamber.
図６を参照して、例えば、第１チャンバではエッチング工程１０ステップを処理するようになり、第２チャンバではＰＲ除去２０又はＰＲストリップ３０のような液処理ステップを処理するか、最終洗浄４０ステップまで含んで処理が可能であり、最終洗浄ステップは別途の第３チャンバで処理する構成であってもよい。
Referring to FIG. 6, for example, in the first chamber, 10 etching steps are processed, and in the second chamber, a liquid processing step such as
また、前記第１チャンバで第１処理液を供給する第１液処理ステップは、基板の下面を処理し、前記基板移送ステップは、基板を反転する基板反転移送ステップで構成し、前述したエッチング及び洗浄工程を行うことができる。 The first liquid processing step of supplying the first processing liquid in the first chamber processes the lower surface of the substrate, and the substrate transfer step includes a substrate inversion transfer step of inverting the substrate. A cleaning step can be performed.
このような工程分離型基板処理方法において、前記第１チャンバで行われる第１液処理ステップは、エッチング工程又はＰＲストリップ工程を含み、前記第２チャンバで行われる第２液処理ステップはＳＣ１処理工程を含んでいてもよい。 In such a process separation type substrate processing method, the first liquid processing step performed in the first chamber includes an etching process or a PR strip process, and the second liquid processing step performed in the second chamber is an SC1 processing process. May be included.
また、前記第１チャンバで行われる第１液処理ステップは、高温ＳＰＭエッチング工程であり、前記第１チャンバで別途の加熱装置により基板及びＳＰＭを加熱することを特徴とする。 The first liquid processing step performed in the first chamber is a high-temperature SPM etching process, and the substrate and the SPM are heated by a separate heating device in the first chamber.
また、前記第１チャンバでの基板の洗浄及び乾燥ステップを更に含み、前記第１チャンバで洗浄及び乾燥処理される基板は、完全乾燥以前状態に基板移送ステップが行われる。 The substrate further includes cleaning and drying steps of the substrate in the first chamber, and the substrate transfer step is performed on the substrate to be cleaned and dried in the first chamber before being completely dried.
前述するように、エッチング工程は、エッチング中に発生する異質物を一次的に除去する洗浄及び乾燥が必須であり、この時、基板が完全乾燥されれば異質物が固着化され、最終洗浄が難しくなる問題がある。 As described above, in the etching process, it is essential to perform cleaning and drying to remove temporarily foreign substances generated during etching. At this time, if the substrate is completely dried, the foreign substances are fixed, and the final cleaning is performed. There is a problem that becomes difficult.
従って、エッチング工程１０で、エッチング、洗浄及び乾燥において、完全乾燥しない状態を保持し、次の工程２０、３０、４０に基板が移送されることが好ましい。
Therefore, it is preferable that the
以上、添付図面を参照して、本発明の実施例を説明したが、本発明が属する技術分野の当業者は、本発明のその技術的思想や必須特徴を変更することなく、他の具体的な形態を実施できることを理解することができるものである。 Although the embodiments of the present invention have been described above with reference to the accompanying drawings, those skilled in the art to which the present invention pertains can be applied to other specific examples without changing the technical idea and essential features of the present invention. It can be understood that various forms can be implemented.
従って、以上で記述した実施例は、全ての面で例示的なものであり、限定的でないものとして理解すべきであり、本発明の範囲は、前記詳細な説明は、後述する特許請求の範囲により示され、特許請求の範囲の意味及び範囲、そしてその等価概念から想到される全ての変更又は変形された形態は本発明の範囲に属されるものとする。 Accordingly, the embodiments described above are to be understood in all respects as illustrative and not restrictive, and the scope of the invention is defined by the following detailed description. All modifications or variations that are intended to come from the meaning and scope of the claims and that come from the equivalent concept are intended to be within the scope of the present invention.
１００ 第１チャンバ
２００ 第２チャンバ
３００ 移送ユニット
３１０ 反転移送ユニット
４００ 加熱手段
５００ 第３チャンバ。
100
Claims (13)
前記基板に第２処理液を供給する液処理工程を含んで行う第２チャンバと、
前記第１及び第２チャンバ間に前記基板を移送する移送ユニットと、
を含み、
前記第１チャンバと第２チャンバで行われる工程は、チャンバ内結晶生成を抑制するように分離されていることを特徴とする工程分離型基板処理装置。 A first chamber that includes a liquid processing step of supplying a first processing liquid to the substrate;
A second chamber including a liquid processing step of supplying a second processing liquid to the substrate;
A transfer unit for transferring the substrate between the first and second chambers;
Including
The process separation type substrate processing apparatus, wherein the processes performed in the first chamber and the second chamber are separated so as to suppress crystal formation in the chamber.
前記第１処理液と第２処理液は、互いに反応して結晶が生成され得る薬液であることを特徴とする請求項１に記載の工程分離型基板処理装置。 The first treatment liquid is a chemical that can generate crystals during the liquid treatment process,
The process-separated substrate processing apparatus according to claim 1, wherein the first processing liquid and the second processing liquid are chemical liquids that can react with each other to generate crystals.
前記第２処理液は、ＳＣ１溶液であることを特徴とする請求項２に記載の工程分離型基板処理装置。 The first processing liquid is an etching solution for performing an etching process or a chemical liquid capable of PR strip processing,
The process separation type substrate processing apparatus according to claim 2, wherein the second processing liquid is an SC1 solution.
前記第２処理液は、ＳＣ１溶液を含む薬液であることを特徴とする請求項２に記載の工程分離型基板処理装置。 The first treatment liquid is a chemical liquid containing any one of HF, LAL, SPM, and H 3 PO 4 ,
The process separation type substrate processing apparatus according to claim 2, wherein the second processing solution is a chemical solution containing an SC1 solution.
前記第１チャンバで処理される基板は、完全乾燥以前状態で前記第２チャンバへ移送されることを特徴とする請求項１〜５のいずれかに記載の工程分離型基板処理装置。 The process performed in the first chamber further includes a cleaning and drying process,
6. The process separation type substrate processing apparatus according to claim 1, wherein the substrate processed in the first chamber is transferred to the second chamber in a state before complete drying.
前記移送ユニットは、前記第１及び第２チャンバ間に前記基板を移送することを特徴とする請求項１に記載の工程分離型基板処理装置。 The first chamber and the second chamber are arranged one above the other,
The process separation type substrate processing apparatus according to claim 1, wherein the transfer unit transfers the substrate between the first and second chambers.
前記移送ユニットは、前記第１及び第２チャンバ間に前記基板を移送することを特徴とする請求項１に記載の工程分離型基板処理装置。 The first chamber and the second chamber are arranged in parallel in the left-right direction,
The process separation type substrate processing apparatus according to claim 1, wherein the transfer unit transfers the substrate between the first and second chambers.
前記移送ユニットは、前記第１及び第２チャンバ間に前記基板を反転して、移送する反転移送ユニットであることを特徴とする請求項８又は９に記載の工程分離型基板処理装置。 The liquid processing step in the first chamber is a liquid processing step on the lower surface of the substrate,
10. The process separation type substrate processing apparatus according to claim 8, wherein the transfer unit is a reverse transfer unit that reverses and transfers the substrate between the first and second chambers.
前記第２処理液は、ＳＣ１であることを特徴とする請求項１０に記載の工程分離型基板処理方法。 The first treatment liquid is SPM or H 3 PO 4 ,
The process-separated substrate processing method according to claim 10, wherein the second processing liquid is SC1.
前記移送ユニットは、第１、第２及び第３チャンバ間に前記基板を移送する移送ユニットであることを特徴とする請求項１又は２に記載の工程分離型基板処理装置。 And a third chamber for cleaning and drying the substrate.
The process separation type substrate processing apparatus according to claim 1, wherein the transfer unit is a transfer unit that transfers the substrate between the first, second, and third chambers.
前記基板を前記第１チャンバから第２チャンバへ移送する基板移送ステップと、
第２チャンバで行われる前記基板に、第２処理液を供給する第２液処理ステップと、を含み、
前記第１液処理ステップと第２液処理ステップで行われる工程は、チャンバ内結晶生成を抑制するように分離されていることを特徴とする工程分離型基板処理方法。 A first liquid processing step of supplying a first processing liquid to the substrate performed in the first chamber;
A substrate transfer step of transferring the substrate from the first chamber to a second chamber;
A second liquid processing step of supplying a second processing liquid to the substrate performed in a second chamber,
A process separation type substrate processing method, wherein the processes performed in the first liquid processing step and the second liquid processing step are separated so as to suppress in-chamber crystal formation.
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