CN105374714A - Apparatus and method treating substrate with separated processes - Google Patents

Apparatus and method treating substrate with separated processes Download PDF

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Publication number
CN105374714A
CN105374714A CN201510494732.5A CN201510494732A CN105374714A CN 105374714 A CN105374714 A CN 105374714A CN 201510494732 A CN201510494732 A CN 201510494732A CN 105374714 A CN105374714 A CN 105374714A
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chamber
substrate
technique
treatment
liquid
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CN105374714B (en
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赵允仙
金瀚沃
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Zeus Co Ltd
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Zeus Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67161—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers
    • H01L21/67173—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers in-line arrangement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67023—Apparatus for fluid treatment for general liquid treatment, e.g. etching followed by cleaning
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67703—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations
    • H01L21/67718—Changing orientation of the substrate, e.g. from a horizontal position to a vertical position

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Weting (AREA)

Abstract

The invention relates to an apparatus and a method treating a substrate of a semiconductor wafer, more specifically relates to an apparatus and a method treating a substrate with separated processes executed in different chambers, such as a liquid treating process and a liquid cleaning process. The device comprises a first chamber including and executing a liquid treating process by supplying a first treating solution to the substrate, a second chamber including and executing a liquid treating process by supplying a second treating solution to the substrate, and a transferring unit which transfers the substrate between the first chamber and the second chamber. The processes of the first chamber and the second chamber are separated to inhibit crystal generation in the chambers.

Description

Technique divergence type substrate board treatment and processing method
Technical field
The present invention relates to a kind of substrate board treatment and processing method of such as semiconductor wafer, relate to a kind of technique divergence type substrate board treatment of being separated from cleaning by the liquid processing process of such as etch process and then can perform at different chambers and processing method in more detail.
Background technology
Generally speaking, semiconductor element is, by the substrate to such as silicon wafer, perform that the various technique of such as photoetching process (photoprocess), etch process (etchingprocess), ion implantation technology (ionimplantationprocess) and evaporation process (Depositionprocess) etc. formed.
Further, in the process performing each technique, in order to remove the various pollutants being attached to substrate, cleaning is performed.Cleaning comprises: the liquid treatment process removing the polluter on substrate with liquid (chemical); The cleaning (wetcleaningprocess) of liquid residual on substrate is removed with pure water (purewater); And supply drying fluid removes the drying process (dryingprocess) of the pure water remained at substrate surface.
In more detail, in the manufacturing process of semiconductor element, etch process forms etchant resist with predetermined pattern on the handling object film being formed at substrate, using this etchant resist (resistfilm) as mask, the process such as etching, ion implantation is performed to described handling object film, and removes from substrate the etchant resist no longer needed.
Processing substrate mode in order to above-mentioned technique roughly can divide into dry type (Dry) processing mode and wet type (Wet) processing mode, wherein wet processed mode is as the mode utilizing various liquid, is divided into single wafer (singlewafertype) device of examination in batches (batchtype) device and the treatment substrate in units of monolithic simultaneously processing multiple substrate.
Try processing unit is that disposable for the multiple substrate rinse bath containing cleaning fluid that impregnated in is removed pollutant sources in batches.But the existing processing unit of examination is in batches not easy to the trend adapting to substrate maximization, and there is the shortcoming that need use a lot of cleaning fluids.
Further, trying in processing unit in batches, when substrate is by breakage in process, all substrates in rinse bath can had influence on, therefore there is the risk that can produce a large amount of defective substrates.
Try multiple wafers of the disposable cleaning of wafer cleaning method in batches, therefore scavenging period is short and have high handling rate, and then formation efficiency is high, but because the intersection (cross) between wafer is polluted, cleaning efficiency is caused to reduce, and because of multiple wafers of disposable process, and then the process results processed after wafer is uneven, and use a large amount of cleaning fluids, thus exist costly and induced environment pollute problem.
On the contrary, single wafer wafer cleaning method is the method using a small amount of cleaning fluid to clean to single-chip, although cleaning efficiency is low, but without the cross pollution between wafer, and clean single wafer by identical condition at every turn, therefore after the process (after processing of wafers) process results is even, and cleans at high cleanliness environment, therefore has the advantage that cleaning efficiency is high.
Especially, because of the heavy caliber of wafer, the disposal ability in batches trying cleaning method is limited, and becomes more important to semiconductor element cleaning efficiency highly integrated gradually, therefore utilize single wafer cleaning method to increase gradually, and be more inclined to single wafer processing unit recently.
Single wafer processing unit is as the mode of carrying out processing in units of individual substrate, treatment fluid and cleaning fluid or dry gas are sprayed the substrate surface in High Rotation Speed, and then utilize rotation mode (spinningmethod, the pressure that the centrifugal force rotated because of substrate and the injection of cleaning fluid produce removes pollutant sources) to carry out etching and cleaning.
Usually, single wafer processing unit comprises: collecting substrate performs the chamber of cleaning; The rotating suction disc (SpinChuck) rotated is carried out with the state of predetermined substrate; And for the cleaning fluid comprising liquid, flushing liquor and dry gas etc. being supplied in the nozzle assembly of substrate.
That is, existing general single wafer device is it is characterized by, and after substrate is inserted in chamber, the above-mentioned process sequence such as etching, cleaning is all performed in a chamber.
Recently, minimizing technology as etchant resist often utilizes SPM process, and SPM is treated to the SPM (SulfuricAcidHydrogenPeroxideMixture, sulfuric acid hydrogen peroxide mixture) of high temperature mixing sulfuric acid and hydrogen peroxide obtained, and is supplied in etchant resist to process.
In general, the feature of the situation of SPM technique is, carries out SC1 (NH4OH/H2O2/H2O) treatment process after SPM process, then drying is carried out, but SPM uses acid liquid, and SC1 uses alkaline liquid, therefore crystallization can be produced when a chamber performs technique.
This when producing Acid-Base crystallization in chamber, because crystallization may produce the phenomenon of blocking in exhaust portion or discharge opeing portion, and be attached to the pollution that substrate causes again because of chamber interior crystallization, very serious problem can be become.
This bulk life time at substrate board treatment or safeguard, can become very negative essential factor, especially the mortality essential factor becoming and reduce substrate earning rate is adhered in the crystallization of substrate again.
And then, use and comprise the LALBOE (LowammoniumfluoridelowsurfacetensionBufferedoxideetchant such as comprising NH4F and HF, the agent of low fluorine low surface tension buffered oxide etch) the liquid of ammonium fluoride time, also can crystallization in the technique only using this liquid.
This when may generate the technique of crystallization, other liquid processing process follow-up or cleaning and drying process can be had influence on, and as mentioned above, because crystallization can produce various problem in single wafer device, therefore need to address this is that.
Summary of the invention
(problem that will solve)
The present invention considers problem as above and proposes, its object is to provide following technique divergence type substrate board treatment and processing method: in existing single wafer type substrate processing unit, in order to overcome the problem generating crystallization when liquid processing process, separable technique processes, to make the generation of suppression crystallization.
(means of dealing with problems)
In order to reach described technical purpose, according to technique divergence type substrate board treatment of the present invention, it is characterized in that, comprise: the first chamber, comprise and perform the liquid processing process the first treatment fluid being supplied in substrate; Second chamber, comprises and performs the liquid processing process the second treatment fluid being supplied in described substrate; And transfer unit, between first and second chamber described, transfer described substrate, be separated in the technique that described first chamber and the second chamber perform, to suppress to generate crystallization in chamber.
Further, described first treatment fluid is the liquid that can generate crystallization when liquid processing process, or described first treatment fluid and the second treatment fluid are react to each other to generate the liquid of crystallization.
Therefore, described first treatment fluid is the treatment fluid that the etching solution that can perform etch process maybe can carry out PR lift-off processing, and described second treatment fluid is SC1 solution.Specifically, described first treatment fluid is a kind of liquid comprised in HF, LAL, SPM, H3PO4, and described second treatment fluid is the liquid comprising SC1 solution.
Further, described first chamber also can comprise the heating unit of heated substrates.
And then described second chamber, after execution cleaning, also can perform drying process.
Further, the technique performed in described first chamber also can comprise cleaning and drying process, is shifted into described second chamber at the substrate of described first chamber treatment with the state before bone dry.
Further, described first chamber and the second chamber configure up and down, or configure abreast about described first chamber and the second chamber, and described transfer unit transfers described substrate between first and second chamber described.
And then the liquid processing process of described first chamber is the liquid processing process for base lower surface, described transfer unit can be between first and second chamber described, overturn described substrate to carry out the upset transfer unit transferred.At this moment, described first treatment fluid of use is SPM or H3PO4, and described second treatment fluid is SC1.
Further, also can comprise the 3rd chamber performing cleaning and dry described substrate, described transfer unit is the transfer unit transferring described substrate between first, second and third chamber.
Further, in order to reach above-mentioned technical purpose, technique divergence type substrate processing method using same according to the present invention comprises: first liquid treatment step, the first treatment fluid is supplied in the substrate performed at the first chamber; Base plate transfer step, is transferred to the second chamber by described substrate at described first chamber; And second liquid treatment step, the second treatment fluid is supplied in the described substrate performed at described second chamber, wherein, is separated in the technique performed in described first liquid treatment step and second liquid treatment step, to suppress to generate crystallization in chamber.
(effect of invention)
As mentioned above, according to technique divergence type substrate board treatment of the present invention and substrate processing method using same, there is following advantage: by the substrate processing process of the liquid processing process of the substrate of such as etch process, such as PR stripping technology or cleaning and drying process perform at independent chamber, therefore compare the technology in all technique of existing single wafer type substrate processing unit process, have and can prevent from from source polluting substrate because generating crystallization in chamber.
Further, use the technique comprising the treatment fluid of ammonium fluoride to be also separated with other techniques, perform at respective chamber, be therefore separated technique and other technique that can generate crystallization, and then can prevent substrate from being polluted by crystallization.
And, the lower surface for the treatment of substrate in the first chamber, and suppress the smog (fume) produced when liquid processing process to distribute to chamber interior top, if this smog is discharged to chamber lower portion, then compared to the technology of the upper surface of existing liquid handling substrate, can holding chamber chamber interior environment more cleanly, therefore can improve the cleannes of processing substrate.
And then, if form by the upset transfer unit of turning substrate transfer unit substrate being transplanted on the second chamber at the first chamber, then in the second chamber, make the treated side of substrate towards top, and then compare existing mode, effectively carry out cleaning and drying, the earning rate of substrate can be improved.
Accompanying drawing explanation
Fig. 1 is the figure of the structure that technique divergence type substrate board treatment according to an embodiment of the invention is schematically shown.
Fig. 2 illustrates in technique divergence type substrate board treatment according to an embodiment of the invention, to form first and second chamber up and down and the exemplary diagram being separated SPM technique and cleaning.
Fig. 3 illustrates in technique divergence type substrate board treatment according to an embodiment of the invention, form first and second chamber up and down and be separated the exemplary diagram comprising ammonium chloride treatment fluid (LAL) technique and other techniques.
Fig. 4 illustrates that level forms the exemplary diagram of first and second chamber in technique divergence type substrate board treatment according to an embodiment of the invention.
Fig. 5 comprises first, second and third chamber and the exemplary diagram being separated each technique and forming at technique divergence type substrate board treatment according to an embodiment of the invention
Fig. 6 is the figure for illustration of carrying out the substrate processing process processed in technique divergence type substrate processing method using same according to an embodiment of the invention.
Main Reference Numerals illustrates:
100: the first chamber 200: the second chambers
300: transfer unit 310: upset transfer unit
400: heating unit 500: the three chamber
Embodiment
Advantage of the present invention, feature can be specified with reference to the embodiment be described in detail later and reach method together with accompanying drawing.Hereinafter, with reference to the accompanying drawings of technique divergence type substrate board treatment and substrate processing method using same according to an embodiment of the invention.
With reference to Fig. 1, technique divergence type substrate board treatment comprises according to an embodiment of the invention: the first chamber 100, comprises and performs the liquid processing process the first treatment fluid being supplied in substrate; Second chamber 200, comprises and performs the liquid processing process the second treatment fluid being supplied in described substrate; And transfer unit 300, between first and second chamber 100,200 described, transfer described substrate.
Described first chamber 100 and the second chamber 200, as the inscape of inner space with execution liquid processing process (first, second treatment fluid is supplied in substrate), can the chamber form that provides of existing single wafer type substrate processing unit provide.
Further, described first chamber 100 and the second chamber 200 can comprise treatment fluid feeding mechanism respectively to perform the liquid processing process of substrate, and are separated in the technique that described first chamber 100 and the second chamber 200 perform, to suppress to generate crystallization in chamber.
Therefore, described first treatment fluid can be generate the liquid of crystallization when liquid processing process, or described first treatment fluid and the second treatment fluid can be react to each other and generate the liquid of crystallization.
With reference to Fig. 2, the first treatment fluid being supplied in substrate in described first chamber 100 can be the treatment fluid that the etching solution performing etch process maybe can carry out PR stripping technology, and described second treatment fluid can be SC1 solution.
As mentioned above, SPM treatment fluid is acid, and SC1 treatment fluid is alkalescence, therefore performs at described first chamber 100 and the second chamber 200 technique utilizing aforesaid liquid respectively, thus can suppress from source to generate crystallization.
With reference to Fig. 3, when use comprises the ammonium fluoride liquid of such as LALBOE (LowammoniumfluoridelowsurfacetensionBufferedoxideetchant) (comprising H4F and HF), itself possibility crystallization, therefore this liquid is divided into the first treatment fluid, and perform in the first independent chamber 100, other techniques are carried out at the second chamber 200, therefore can completely cut off the impact caused because generating crystallization to other techniques.
And, described first chamber 100 also can comprise the heating unit 400 of heated substrates, at this moment, when the first treatment fluid performed at described first chamber 100 is SPM treatment fluid, the SPM treatment fluid being supplied in substrate can be heated, therefore can perform high temperature SPM etch process at described first chamber 100.
Described heating unit 400 plays the effect improving temperature, can improve the etching efficiency of the SPM treatment fluid of substrate and supply, and can be the heater of various shape or similar component.
And then the technique performed at described first chamber 100 also can comprise cleaning and drying process, can be transplanted on described second chamber at the substrate of described first chamber treatment with the state before bone dry.
Described first chamber 100 processes wet etch process, and wet etch process generally comprises before final cleaning and drying steps, first cleaning and the drying process removing organic substance or the metal byproducts produced at etch process.Cleaning in this wet etch process and drying can not remove all residues, in final cleaning and drying process, remove residuum.
Technique divergence type substrate board treatment according to the present invention is, wet etch process is cleaned from final and drying process performs at different chambers respectively, clean if carry out for the first time in wet etch process and dry time make substrate bone dry, then can produce the problem that residue can be bonded to substrate.
Therefore, be preferably, substrate is not the state with bone dry in the first chamber, but is transplanted on the second chamber to carry out final cleaning step and drying steps with moistening state, and this has the advantage that can improve cleaning performance in the second chamber.
With reference to Fig. 2 to Fig. 3, described first chamber 100 and the second chamber about 200 configure, and described transfer unit 300 can be the structure mutually transferring described substrate between first and second chamber described up and down.
With reference to Fig. 4, described first chamber 100 and the second chamber about 200 configure abreast, and described transfer unit 300 also can be the structure transferring described substrate between first and second chamber described abreast.
The height of the processing chamber that the configuration of this first chamber 100 and the second chamber 200 performs according to each chamber changes, and therefore in order to form the height of total system equably, is preferably up and down or configured in parallel.
Such as, the chamber of cleaning and drying process is processed compared to other, the chamber for the treatment of S PM technique more needs inner space, if form the chamber for the treatment of S PM technique up and down, and form the chamber of process cleaning and drying process individually up and down, then the height of left and right chamber is different, and therefore the first chamber of configuration process SPM technique clean with process and the second chamber of drying process up and down, can make the high uniformity of the chamber system of entirety.
And then the liquid processing process of described first chamber 100 is the liquid processing process for base lower surface, described transfer unit 300 can be the upset transfer unit 310 of the described substrate of upset transfer between first and second chamber described.
As mentioned above, mainly wet etch process is performed at described first chamber 100, etch process, because of the special component meeting liquid to be treated removal of its characteristic upper substrate surface, can produce suitable smog (Fume) thus, and then smog rising becomes the reason polluting chamber interior.
Therefore, if make this processing substrate face down row relax of going forward side by side, then smog can be suppressed to rise, and if to chamber lower portion discharge smog, then compared to using the existing mode of upper surface as processing substrate face, can keep more cleanly and manage chamber interior.
On the contrary, described second chamber 200 mainly performs cleaning, cleaning is the most effective when upper surface is carried out clean as the treated side of substrate, therefore needs the substrate overturning process in the first chamber 100, so that upper surface is inserted in the second chamber 200 as treated side.
Therefore, as described transfer unit 300, the upset transfer unit 310 providing substrate overturn to transfer, performs etching and the cleaning-drying technique of substrate by the first chamber 100 and the second chamber 200.
The present invention according to because of the first treatment fluid, the liquid characteristic that such as produces smog can select a kind of method from following method for transporting: with the normal method for transporting of parallel state transfer substrate; The upset method for transporting transferred is carried out with substrate overturn.Below for classification example is according to the table of the base plate transfer method for the treatment of fluid kind.
[table]
According to the base plate transfer method for the treatment of fluid kind
And then with reference to Fig. 5, also can comprise the 3rd chamber 500 of the technique performing cleaning and dry described substrate, at this moment described second chamber 200 performs the liquid processing process the second treatment fluid being supplied in described substrate.
Namely, the etch process of the liquid processing process as supply the first treatment fluid (such as SPM) is performed in the first chamber 100, described second chamber 200 performs the liquid processing process supplying second treatment fluid of such as SC1, makes final cleaning and drying process be located away from other techniques to perform substrate processing process in addition at described 3rd chamber 500.
According to this formation, segment independent chamber for each technique, therefore have and suppress to generate crystallization between substrate processing process, the cleannes of substrate can be improved, and be easy to the advantage safeguarding substrate board treatment.
Below, the technique divergence type substrate processing method using same utilizing technique divergence type substrate board treatment is according to an embodiment of the invention described, it is characterized in that, the method comprises: first liquid treatment step, the first treatment fluid is supplied in the substrate in the first chamber treatment; Second liquid treatment step, is supplied in the described substrate in the second chamber treatment by the second treatment fluid.The technique performed at described first liquid treatment step and second liquid treatment step is separated, to suppress to generate crystallization in chamber.
And, also be included in cleaning and the drying steps of described second chamber execution, mainly process etch process or PR stripping technology in the first chamber, all the other liquid processing process and cleaning can be processed in the second chamber, and by described substrate to be transplanted on the base plate transfer step of the second chamber from described first chamber, overall substrate processing process can be performed.
And then, be included in the cleaning step performed in the 3rd independent chamber, can mainly process etch process or PR stripping technology at the first chamber, all the other liquid processing process can be performed in the second chamber, and final cleaning can be processed in the 3rd chamber.
At this moment, described base plate transfer step can be configured to, by described base plate transfer to described first chamber, the second chamber and the 3rd chamber.
With reference to Fig. 6, such as process etch process 10 step in the first chamber, can process the liquid processing steps that such as PR removes 20 or PR stripping 30 in the second chamber, or also can comprise final cleaning step 40, and final cleaning step can process at the 3rd independent chamber.
Further, supply the lower surface of the first liquid treatment step treatment substrate of the first treatment fluid in described first chamber, described base plate transfer step is transferred step by the substrate overturn of substrate overturn and is formed, and then can perform above-mentioned etch cleaning technique.
In this technique divergence type substrate processing method using same, the first liquid treatment step performed at described first chamber can comprise PR stripping technology, and the second liquid treatment step performed in described second chamber comprises SC1 treatment process.
Further, the first liquid treatment step performed at described first chamber can be high temperature SPM etch process, it is characterized by described first chamber by independent heating devices heat substrate and SPM.
And then, be also included in cleaning and the drying steps of the substrate in described first chamber, cleaned in described first chamber and the substrate of dry process with the state before bone dry to perform base plate transfer step.
As mentioned above, for etch process, must carry out first cleaning and drying of removing the foreign substances produced when etching, if at this moment substrate is completely dried, then foreign substances is cured, and there is the problem that final cleaning is difficult to.
Therefore, be preferably, carry out etching in etch process 10, clean and dry time, the technique 20,30,40 after substrate keeps the state of non-bone dry to be transplanted on.
Above, with reference to the accompanying drawings of embodiments of the invention, but the technical staff in the technical field of the invention with usual knowledge it will be appreciated that as when not changing technological thought of the present invention or essential feature, can implement with other concrete forms.
Therefore, the above embodiment described be illustrate all in example, but not the determinate meaning, scope of the present invention is embodied by aforesaid claims, and the meaning of accessory rights claim and scope also have the form of all changes or the distortion of deriving with its equivalent conception be interpreted as being included in scope of the present invention.

Claims (13)

1. a technique divergence type substrate board treatment, is characterized in that, comprising:
First chamber, comprises and performs the liquid processing process to supply substrate first treatment fluid;
Second chamber, comprises and performs the liquid processing process to described supply substrate second treatment fluid; And
Transfer unit, transfers described substrate between first and second chamber described,
Wherein, the technique performed at described first chamber and the second chamber is separated, to suppress to generate crystallization in chamber.
2. technique divergence type substrate board treatment according to claim 1, is characterized in that,
Described first treatment fluid is the liquid that can generate crystallization when liquid processing process, or
Described first treatment fluid and the second treatment fluid are react to each other to generate the liquid of crystallization.
3. technique divergence type substrate board treatment according to claim 2, is characterized in that,
Described first treatment fluid is can perform the etching solution of etch process or carry out the treatment fluid of PR lift-off processing,
Described second treatment fluid is SC1 solution.
4. technique divergence type substrate board treatment according to claim 2, is characterized in that,
Described first treatment fluid is a kind of liquid be included in HF, LAL, SPM, H3PO4,
Described second treatment fluid is the liquid comprising SC1 solution.
5. technique divergence type substrate board treatment according to claim 3, is characterized in that,
Described first chamber also comprises the heating unit of heated substrates.
6. the technique divergence type substrate board treatment according to any one in claim 1 to 5, is characterized in that,
Described second chamber, after execution cleaning, also performs drying process.
7. the technique divergence type substrate board treatment according to any one in claim 1 to 5, is characterized in that,
The technique performed in described first chamber also comprises cleaning and drying process,
Described second chamber is shifted into the state before bone dry at the substrate of described first chamber treatment.
8. technique divergence type substrate board treatment according to claim 1, is characterized in that,
Described first chamber and the second chamber configure up and down,
Described transfer unit transfers described substrate between described first chamber and the second chamber.
9. technique divergence type substrate board treatment according to claim 1, is characterized in that,
Configure abreast about described first chamber and the second chamber,
Described transfer unit transfers described substrate between described first chamber and the second chamber.
10. technique divergence type substrate board treatment according to claim 8 or claim 9, is characterized in that,
The liquid processing process of described first chamber is the liquid processing process for base lower surface,
Described transfer unit is, overturns the upset transfer unit that described substrate carries out transferring between described first chamber and the second chamber.
11. technique divergence type substrate board treatments according to claim 10, is characterized in that,
Described first treatment fluid is SPM or H3PO4,
Described second treatment fluid is SC1.
12. technique divergence type substrate board treatments according to claim 1 and 2, is characterized in that, also comprise the 3rd chamber performing cleaning and dry described substrate,
Described transfer unit is the transfer unit transferring described substrate between the first chamber, the second chamber and the 3rd chamber.
13. 1 kinds of technique divergence type substrate processing method using sames, is characterized in that, comprising:
First liquid treatment step, to supply substrate first treatment fluid of the first chamber treatment;
Base plate transfer step, is transferred to the second chamber by described substrate from described first chamber; And
Second liquid treatment step, to described supply substrate second treatment fluid of described second chamber treatment,
Wherein, be separated in the technique performed in described first liquid treatment step and second liquid treatment step, to suppress to generate crystallization in chamber.
CN201510494732.5A 2014-08-12 2015-08-12 Technique divergence type substrate board treatment and processing method Active CN105374714B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
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