CN209747470U - Substrate cleaning system - Google Patents

Abstract

the utility model provides a substrate cleaning system, it can restrain the collapse of pattern and the erosion of basement membrane to can detach the particle that adheres to the base plate, have: a1 st processing unit including a1 st holding unit for holding a substrate and a1 st supply unit, the 1 st supply unit being provided above the 1 st holding unit and supplying a processing liquid containing a volatile component to the substrate to form a film on the entire main surface of the substrate; and a 2 nd processing part including a 2 nd holding part for holding the substrate and a 2 nd supply part, the 2 nd supply part being provided above the 2 nd holding part, supplying the substrate with a removing liquid for dissolving all of the film formed by solidifying or hardening the processing liquid supplied to the substrate by the 1 st supply part on the substrate after the volatile component is volatilized, and supplying the rinse liquid to the substrate, the rinse liquid removing the dissolved film and the removing liquid remaining on the substrate from the substrate; and a back surface cleaning unit for supplying a cleaning liquid to the center of the back surface of the substrate held by the 2 nd holding unit.

Description

Substrate cleaning system

Technical Field

The utility model relates to a base plate cleaning system.

Background

Conventionally, a substrate cleaning apparatus is known which removes particles adhering to a substrate such as a silicon wafer or a compound semiconductor wafer.

As such a substrate cleaning apparatus, an apparatus for removing particles by using a physical force generated by supplying a fluid such as a liquid or a gas to a main surface of a substrate is known (see patent document 1). Further, there is also known a substrate cleaning apparatus for removing particles by a chemical action (for example, etching action) of a chemical liquid supplied from SC1 or the like to a main surface of a substrate (see patent document 2).

Patent document 1, Japanese patent application laid-open No. 8-318181

Patent document 2, Japanese patent laid-open No. 2007-258462

SUMMERY OF THE UTILITY MODEL

However, in the method of removing fine particles by physical force as in the technique described in patent document 1, there is a possibility that the pattern formed on the main surface of the substrate collapses by the physical force.

In addition, in the method of removing particles by chemical action of a chemical solution as in the technique described in patent document 2, for example, an underlying film of a substrate may be etched by etching action or the like.

The utility model aims to provide a: provided are a substrate cleaning system and a substrate cleaning method, which can suppress pattern collapse and erosion of a base film and can remove particles adhering to a substrate.

The utility model discloses a base plate cleaning system of first form possesses: a1 st processing unit including a1 st holding unit for holding a substrate and a1 st supply unit provided above the 1 st holding unit for supplying a processing liquid containing a volatile component for forming a film on the entire main surface of the substrate to the substrate; a 2 nd processing unit including a 2 nd holding unit for holding the substrate and a 2 nd supply unit for supplying a removing liquid for dissolving all of a film formed by solidifying or hardening the processing liquid supplied from the 1 st supply unit to the substrate on the substrate after the volatile component is volatilized, and supplying a rinse liquid for removing the dissolved film remaining on the substrate and the removing liquid from the substrate, to the substrate, and the 2 nd supply unit being provided above the 2 nd holding unit; and a back surface cleaning unit configured to supply a cleaning liquid to a center of a back surface of the substrate held by the 2 nd holding unit.

Further, in the substrate cleaning system according to the first aspect of the present invention, the 2 nd processing unit may be configured to: and performing a drying process on the substrate after the rinse liquid is supplied from the 2 nd processing unit.

Further, in the substrate cleaning system according to the first aspect of the present invention, the 2 nd holding unit includes a rotation holding mechanism that rotatably holds the substrate, and the 2 nd processing unit is configured to: the drying process is performed by rotating the rotary holding mechanism to spin off the rinse liquid remaining on the substrate.

Further, in the substrate cleaning system according to the first aspect of the present invention, the 2 nd supply unit includes, at one end portion of the 2 nd supply unit: a removal liquid supply nozzle for supplying the removal liquid to the substrate, and a rinse liquid supply nozzle for supplying the rinse liquid to the substrate.

the utility model discloses a base plate cleaning system of second kind form possesses: a1 st processing unit including a1 st holding unit for holding a substrate and a1 st supply unit provided above the 1 st holding unit for supplying a processing liquid containing a volatile component for forming a film on the entire main surface of the substrate to the substrate; and a 2 nd processing unit including a 2 nd holding unit for holding the substrate and a 2 nd supply unit for supplying a removal liquid for dissolving an entire film formed by solidifying or hardening the processing liquid supplied from the 1 st supply unit to the substrate on the substrate after the volatile component is volatilized and supplying a rinse liquid for removing the dissolved film remaining on the substrate and the removal liquid from the substrate to the substrate, wherein the 2 nd holding unit includes a 2 nd holding unit for holding the substrate at one end portion and a 2 nd supply unit for supplying a holding unit for holding an edge portion of the substrate at an edge portion.

Further, the present invention in a second aspect provides a substrate cleaning system, further comprising: and a back surface cleaning unit configured to supply a cleaning liquid to a center of a back surface of the substrate held by the 2 nd holding unit.

In the substrate cleaning system according to the second aspect of the present invention, the 2 nd processing unit further includes a 3 rd supply unit, the 3 rd supply unit being separated from the 2 nd supply unit, and the removal liquid is supplied to the holding unit included in the 2 nd holding unit.

In the substrate cleaning system according to the second aspect of the present invention, the 2 nd holding portion includes a1 st gripping portion for gripping the edge portion of the substrate, and a 2 nd gripping portion operable independently of the 1 st gripping portion.

Further, in a substrate cleaning system according to a second aspect of the present invention, the processing unit 1 and the processing unit 2 are respectively housed in different chambers.

The utility model discloses a cleaning system of third kind form possesses: a1 st processing unit including a1 st holding unit for holding a substrate and a1 st supply unit provided above the 1 st holding unit for supplying a processing liquid containing a volatile component for forming a film on the entire main surface of the substrate to the substrate; a 2 nd processing unit including a 2 nd holding unit for holding the substrate and a 2 nd supply unit for supplying a removal liquid for dissolving an entire film formed by solidifying or hardening the processing liquid supplied from the 1 st supply unit to the substrate on the substrate after the volatile component is volatilized and supplying a rinse liquid for removing the dissolved film remaining on the substrate and the removal liquid from the substrate, the 2 nd processing unit being provided above the 2 nd holding unit, the 2 nd supply unit being configured to supply the removal liquid for dissolving the entire film and supplying the rinse liquid to the substrate, wherein the 1 st processing unit further includes: and a pure water supply unit configured to supply pure water to the substrate.

In the substrate cleaning system according to the third aspect of the present invention, the 1 st holding portion includes an adsorption holding portion for adsorbing and holding the substrate at one end portion, and the 2 nd holding portion includes a holding portion for holding an edge portion of the substrate at an edge portion.

Further, the present invention provides a substrate cleaning system according to a third aspect, further comprising: and a back surface cleaning unit configured to supply a cleaning liquid to a center of a back surface of the substrate held by the 2 nd holding unit.

According to the present invention, collapse of the pattern and erosion of the base film can be suppressed, and particles adhering to the substrate can be removed. Further, since different holding portions are used when the processing liquid is supplied to the substrate and when the removing liquid is supplied to the substrate, the processing liquid can be prevented from adhering to the 2 nd holding portion that holds the substrate when the removing liquid is supplied.

Drawings

fig. 1 is a schematic diagram showing a schematic configuration of a substrate cleaning system according to embodiment 1.

Fig. 2A is an explanatory view of the substrate cleaning method.

Fig. 2B is an explanatory view of the substrate cleaning method.

Fig. 2C is an explanatory view of the substrate cleaning method.

FIG. 3 is a schematic diagram showing the structure of the 1 st processing unit.

FIG. 4 is a schematic diagram showing the structure of the 2 nd treating section.

Fig. 5 is a flowchart showing processing steps of a substrate cleaning process performed by the substrate cleaning apparatus.

Fig. 6A is an explanatory diagram of the operation of the 1 st processing unit.

Fig. 6B is an explanatory diagram of the operation of the 1 st processing unit.

Fig. 6C is an explanatory diagram of the operation of the 1 st processing unit.

Fig. 7A is an explanatory view of the operation of the 2 nd processing unit.

fig. 7B is an explanatory view of the operation of the 2 nd processing unit.

Fig. 8A is an explanatory view of the operation of the 2 nd processing unit.

Fig. 8B is an explanatory view of the operation of the 2 nd processing unit.

Fig. 8C is an explanatory diagram of the operation of the 2 nd processing unit.

Fig. 9 is a schematic diagram showing the configuration of the 2 nd processing unit according to embodiment 2.

Fig. 10A is a schematic diagram showing a modification of the rotation holding mechanism provided in the 2 nd processing unit.

Fig. 10B is a schematic diagram showing a modification of the rotation holding mechanism provided in the 2 nd processing unit.

Fig. 11A is a diagram showing the timing of wafer transfer.

Fig. 11B is a diagram showing another example of the wafer transfer timing.

Fig. 11C is a diagram showing another example of the wafer transfer timing.

Fig. 12A is a view showing a modification in the case where the 1 st processing unit is provided with a function of promoting volatilization.

Fig. 12B is a view showing a modification in the case where the 1 st processing unit is provided with the function of promoting volatilization.

Fig. 13 is a schematic diagram showing a schematic configuration of a substrate cleaning system according to embodiment 5.

FIG. 14 is a schematic diagram showing an example of the structure of the 3 rd processing unit.

Fig. 15A is an explanatory diagram of comparative conditions of the present cleaning method and 2 fluid cleaning.

Fig. 15B is an explanatory diagram of comparative conditions of the present cleaning method and 2 fluid cleaning.

fig. 16 is a graph showing the comparison result between the present cleaning method and 2 fluid cleaning.

Fig. 17 is a graph showing a comparison result between the cleaning method and the chemical cleaning.

fig. 18 is a graph showing a comparison result between the cleaning method and the chemical cleaning.

Detailed Description

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. The present invention is not limited to the embodiments described below.

Embodiment mode 1

Brief structure of substrate cleaning system

First, a schematic configuration of a substrate cleaning system according to embodiment 1 of fig. 1 will be described. Fig. 1 is a diagram showing a schematic configuration of a substrate cleaning system according to embodiment 1. In the following description, in order to clarify the positional relationship, an X axis, a Y axis, and a Z axis orthogonal to each other are defined, and the positive Z axis direction is set to the vertical upward direction. In the following description, the negative X-axis direction is defined as the front of the substrate cleaning system, and the positive X-axis direction is defined as the rear of the substrate cleaning system.

As shown in fig. 1, the substrate cleaning system 100 includes a carrying-in/out station 1, a carrying station 2, and a processing station 3. The loading/unloading station 1, the transfer station 2, and the processing station 3 are arranged in this order from the front side to the rear side of the substrate cleaning system 100, with the loading/unloading station 1, the transfer station 2, and the processing station 3 being arranged in this order.

The carry-in/out station 1 is a place where carriers C containing a plurality of wafers (e.g., 25 wafers) W in a horizontal state are placed, and for example, 4 carriers C are placed in a state of being closely attached to the front wall of the transfer station 2.

The transfer station 2 is disposed behind the carry-in/out station 1, and includes a substrate transfer device 21 and a substrate transfer table 22 therein. In the transfer station 2, the substrate transfer device 21 transfers the wafer W between the carrier C placed on the carry-in/out station 1 and the substrate transfer table 22.

The processing station 3 is disposed behind the conveyance station 2. A substrate transfer device 31 is disposed in the center of the processing station 3.

further, a substrate cleaning apparatus 7 is disposed in the processing station 3. The substrate cleaning apparatus 7 includes a1 st processing unit 5 and a 2 nd processing unit 6 constituting a processing unit different from the 1 st processing unit 5.

The 1 st processing unit 5 and the 2 nd processing unit 6 are disposed on the left and right sides of the substrate transfer device 31, respectively. In the processing station 3, a total of 6 pairs of the 1 st processing unit 5 and the 2 nd processing unit 6 are arranged in the front-rear direction. The arrangement of the 1 st processing unit 5 and the 2 nd processing unit 6 is not limited to the illustration.

In the processing station 3, the substrate transfer device 31 transfers the wafers W one by one among the substrate transfer table 22, the 1 st processing unit 5, and the 2 nd processing unit 6 of the transfer station 2, and the 1 st processing unit 5 and the 2 nd processing unit 6 of each substrate cleaning device 7 perform the substrate cleaning process on the wafers W one by one.

The substrate cleaning system 100 further includes a control device 8. The controller 8 controls the operation of the substrate cleaning system 100. The control device 8 is, for example, a computer, and includes a control unit and a storage unit, which are not shown. The storage unit stores programs for controlling various processes such as a substrate cleaning process. The control unit reads and executes the program stored in the storage unit, thereby controlling the operation of the substrate cleaning system 100.

The program may be a program recorded in a computer-readable storage medium, or may be a program installed from the storage medium to a storage unit of the control device 8. Examples of the computer-readable storage medium include a Hard Disk (HD), a Flexible Disk (FD), an optical disk (CD), a magneto-optical disk (MO), and a memory card.

In fig. 1, the control device 8 is provided outside the substrate cleaning system 100 for convenience, but the control device 8 may be provided inside the substrate cleaning system 100. For example, the control device 8 may be housed in the upper space of the 1 st processing unit 5 or the 2 nd processing unit 6.

In the substrate cleaning system 100 having this configuration, first, the substrate transport device 21 of the transport station 2 takes out one wafer W from the carrier C placed on the carry-in/out station 1, and places the taken-out wafer W on the substrate transfer table 22. The wafer W placed on the substrate transfer table 22 is carried into the 1 st processing unit 5 by the substrate transfer device 31 of the processing station 3, and then carried into the 2 nd processing unit 6. The substrate cleaning process performed in the 1 st processing unit 5 and the 2 nd processing unit 6 will be described in detail later.

The wafer W cleaned by the 1 st and 2 nd processing units 5 and 6 is carried out of the 2 nd processing unit 6 by the substrate transfer device 31 and is placed on the substrate transfer table 22 again. Then, the processed wafer W placed on the substrate transfer table 22 is returned to the carrier C by the substrate transfer device 21.

Here, in the conventional substrate cleaning apparatus, the removal of fine particles by physical force or the removal of fine particles by chemical action of the chemical solution is performed. However, in these methods, the pattern formed on the main surface of the wafer may collapse due to physical force or the underlying film of the wafer may be etched due to etching.

In the substrate cleaning apparatus 7 according to embodiment 1, since particle removal using a change in the volume of the processing liquid is performed instead of these methods, particles adhering to the wafer W are removed while suppressing pattern collapse or erosion of the underlying film.

Contents of the substrate cleaning method

Next, the contents of a substrate cleaning method performed by the substrate cleaning apparatus 7 according to embodiment 1 will be described with reference to fig. 2A to 2C. Fig. 2A to 2C are explanatory views of the substrate cleaning method. In the following description, the circuit forming surface of the wafer W is referred to as a "main surface", and the surface opposite to the main surface is referred to as a "back surface".

As shown in fig. 2A, in embodiment 1, a processing liquid containing a volatile component for forming a film on the entire main surface of the wafer W (hereinafter, referred to as "film forming processing liquid") is used as the processing liquid. Specifically, a film forming treatment liquid (hereinafter referred to as "overcoat liquid") for forming an overcoat film on the wafer W is used. The overcoat film is a protective film applied to the surface of the photoresist film to prevent the immersion liquid from penetrating into the photoresist film. The immersion liquid is a liquid used for immersion exposure in a photolithography process, for example.

As shown in fig. 2A, the substrate cleaning apparatus 7 supplies the overcoat liquid onto the wafer W. The volume of the overcoat liquid supplied onto the wafer W is reduced by volatilization of volatile components contained therein. The overcoat liquid contains an acrylic resin having a property of shrinking in volume when cured or hardened, and the shrinkage in volume of the overcoat liquid is also caused by the hardening shrinkage of the acrylic resin. The term "cured" as used herein means solidified, and the term "hardened" means that molecules are linked to each other and polymerized (for example, crosslinked or polymerized).

Then, the overcoat liquid is cured or hardened while causing volume shrinkage, thereby forming an overcoat film. At this time, fine particles adhering to the pattern or the like are carried away from the pattern or the like by deformation (tensile force) caused by the volume contraction of the overcoat liquid (see fig. 2B).

Since the overcoat liquid undergoes volume shrinkage due to volatilization of volatile components and curing shrinkage of the acrylic resin, the overcoat liquid has a larger volume shrinkage rate than a film-forming treatment liquid containing only volatile components, and can strongly carry away fine particles. In particular, acrylic resins are effective in providing a stretching force to fine particles because they have a larger curing shrinkage than other resins such as epoxy resins.

thereafter, the substrate cleaning apparatus 7 supplies a removing liquid for dissolving the overcoat film onto the overcoat film to dissolve the overcoat film, thereby removing the overcoat film from the entire wafer W. Thereby, the particles are removed from the wafer W together with the overcoat film.

The overcoat film swells when dissolved by the removal liquid. Therefore, according to the substrate cleaning method of embodiment 1, the microparticles can be strongly carried away from the pattern or the like by the volume expansion due to the swelling of the overcoat film in addition to the volume contraction due to the volatilization of the overcoat film.

Thus, in embodiment 1, the removal of fine particles is performed by utilizing the change in volume of the film formation treatment liquid. Accordingly, the fine particles can be removed with a weaker force than in the conventional fine particle removal using physical force, and thus pattern collapse can be suppressed. In addition, since the fine particles are not removed by a chemical action, erosion of the base film due to an etching action or the like can be suppressed. Further, according to the substrate cleaning method of embodiment 1, particles adhering to the wafer W can be removed while suppressing pattern collapse or erosion of the base film. After the overcoat film is formed on the wafer W, the overcoat film can be removed from the wafer W without performing pattern exposure.

In addition, according to the substrate cleaning method according to embodiment 1, it is possible to easily remove fine particles having a small particle diameter or fine particles entering gaps of a pattern, which are difficult to remove in the substrate cleaning method using physical force.

In embodiment 1, a liquid having alkalinity is used as the removal liquid to improve the removal efficiency of the fine particles. Specifically, an alkaline developer is used as the removing liquid. The alkaline developer may contain at least one of ammonia, tetramethylammonium Hydroxide (TMAH), and an aqueous choline solution.

By supplying the alkaline developer, electromotive forces of the same polarity (negative in this case) are generated on the surface of the wafer W or the pattern and the surface of the particles, as shown in fig. 2C. The particles carried away from the wafer W or the like by the change in the volume of the top coat liquid are charged with an electromotive force having the same polarity as that of the wafer W or the like, and thus repel the wafer W or the like. This prevents the particles from re-adhering to the wafer W.

Thus, the particles are carried away from the wafer W or the like by the volume contraction of the overcoat liquid, and then the alkaline developer is supplied to dissolve the overcoat film and generate an electromotive force having the same polarity as that of the particles on the wafer W or the like. This prevents reattachment of the fine particles, and further improves the removal efficiency of the fine particles.

Although the case of utilizing the volume contraction of the top coat liquid has been described here, the volume contraction is not limited as long as the deformation (tensile force) is generated by the volume change of the treatment liquid in order to remove the fine particles. That is, when the resin contained in the overcoat liquid has a property of expanding in volume during curing or hardening, the overcoat liquid expands in volume during curing or hardening, and the fine particles can be removed by the deformation (tensile force) caused thereby.

The film forming processing liquid such as the overcoat liquid supplied to the wafer W is finally removed from the wafer W. Therefore, the cleaned wafer W is in a state before the overcoat liquid is applied, specifically, in a state where the circuit formation surface is exposed.

Structure and operation of substrate cleaning device

Next, the structure and operation of the substrate cleaning apparatus 7 will be specifically described. First, the structure of the 1 st processing unit 5 will be described with reference to fig. 3. Fig. 3 is a schematic diagram showing the structure of the 1 st processing unit 5. In fig. 3, only essential components are shown to explain the features of the processing unit 15, and the description of general components is omitted.

As shown in fig. 3, the 1 st processing unit 5 includes a1 st substrate holding unit 52, liquid supply units 53, 54, and 55, and a recovery cup 56 in the 1 st chamber 51.

The 1 st substrate holding portion 52 includes: a suction holding portion 521 for suction holding the wafer W, a column member 522 for supporting the suction holding portion 521, and a driving portion 523 for rotating the column member 522.

The suction holding unit 521 is connected to a suction device such as a vacuum pump, and horizontally holds the wafer W by sucking the back surface of the wafer W by a negative pressure generated by suction of the suction device. As the suction holding portion 521, a porous suction cup can be used, for example.

The support member 522 is provided below the suction holding portion 521, and is rotatably supported by the 1 st chamber 51 and the recovery cup 56 via a bearing 524.

The driving unit 523 is provided below the pillar member 522 and rotates the pillar member 522 about the vertical axis. Thereby, the wafer W sucked and held by the suction and holding portion 521 rotates.

The liquid supply portions 53 and 54 move from the outside of the wafer W to the above of the wafer W, and supply the processing liquid to the main surface of the wafer W held by the 1 st substrate holding portion 52. The liquid supply section 53 includes nozzles 531, 534, 535; a robot arm 532 that horizontally supports nozzles 531, 534, 535; and a rotation/elevation mechanism 533 for rotating and elevating the robot arm 532. The liquid supply unit 54 includes nozzles 541 and 544, a robot arm 542 that horizontally supports the nozzles 541 and 544, and a rotary lift mechanism 543 that rotates and lifts the robot arm 542.

The liquid supply unit 53 supplies a specific chemical liquid (DHF in this case) from the nozzle 531 to the wafer W, supplies DIW (deionized water) as one kind of rinse liquid from the nozzle 534, and supplies IPA (isopropyl alcohol) as one kind of drying solvent from the nozzle 535. DHF is dilute hydrofluoric acid.

Specifically, the nozzle 531 is connected to the DHF supply source 111 via a valve 121, and the DHF supplied from the DHF supply source 111 is supplied from the nozzle 531 to the wafer W. The nozzle 534 is connected to the DIW supply source 112 through a valve 122, and the DIW supplied from the DIW supply source 112 is supplied from the nozzle 534 to the wafer W. Further, the nozzle 535 is connected to the IPA supply source 113 through the valve 123, and IPA supplied from the IPA supply source 113 is supplied from the nozzle 535 to the wafer W. Thus, the liquid supply unit 53 is an example of a chemical liquid supply unit that supplies a specific chemical liquid to the substrate and a deionized water supply unit that supplies deionized water to the substrate.

The liquid supply unit 54 supplies an overcoat liquid as a film forming processing liquid from the nozzle 541 and MIBC (4-methyl-2-pentanol) as a solvent having affinity with the overcoat liquid from the nozzle 544 to the wafer W. Specifically, the nozzle 541 is connected to the film formation processing liquid supply source 114 via the valve 124, and the overcoat liquid supplied from the film formation processing liquid supply source 114 is supplied onto the wafer W from the nozzle 541. The nozzle 544 (corresponding to a "solvent supply unit") is connected to the solvent supply source 132 via the valve 131, and the MIBC supplied from the solvent supply source 132 is supplied from the nozzle 544 onto the wafer W.

MIBC is a component contained in the overcoat liquid, and has affinity with the overcoat liquid. As a solvent having affinity with the overcoat liquid other than MIBC, PGME (propylene glycol methyl ether), PGMEA (propylene glycol methyl ether acetate), or the like can be used.

Here, the dedicated nozzles 531, 534, 535, 541, and 544 are provided for each processing liquid, but a plurality of processing liquids may share a nozzle. For example, one nozzle may be provided in the robot arm 532, and DHF, DIW, and IPA may be selectively supplied from the nozzle. Similarly, the robot arm 542 may be provided with a single nozzle, and the overcoat liquid and the MIBC may be selectively supplied from the nozzle. However, when the nozzles are shared, for example, when it is not desired to mix the treatment liquids with each other, a step of discharging the treatment liquid remaining in the nozzles or the pipes first is necessary, and the treatment liquid is wasted. On the other hand, if the dedicated nozzles 531, 534, 535, 541, 544 are provided, the process of discharging the processing liquid as described above is not necessary, and thus the processing liquid is not wasted.

The liquid supply unit 55 is provided, for example, at the bottom of the recovery cup 56, and supplies the alkaline developer to the edge portion on the back surface side of the wafer W. Specifically, the liquid supply portion 55 is connected to a removal liquid supply source 115 via a valve 125, and supplies the alkaline developer supplied from the removal liquid supply source 115 to the edge portion on the back surface side of the wafer W. The liquid supply unit 55 is used to remove the overcoat liquid or the overcoat film attached to the bevel portion or the edge portion of the wafer W. This is described later.

The recovery cup 56 is disposed so as to surround the 1 st substrate holding portion 52 in order to prevent the processing liquid from scattering around. A drain port 561 is formed in the bottom of the collection cup 56, and the processing liquid collected by the collection cup 56 is discharged from the drain port 561 to the outside of the 1 st processing part 5.

Next, the structure of the 2 nd processing unit 6 will be described with reference to fig. 4. Fig. 4 is a schematic diagram showing the structure of the 2 nd processing unit 6.

As shown in fig. 4, the 2 nd processing part 6 includes, in the 2 nd chamber 61: a 2 nd substrate holding section 62, a liquid supply section 63, a recovery cup 64, and an airflow forming unit 65.

The 2 nd substrate holding portion 62 includes: a rotation holding mechanism 621 that rotatably holds the wafer W, and a fluid supply unit 622 that is inserted into the hollow portion 621d of the rotation holding mechanism 621 and supplies gas to the back surface of the wafer W.

The rotation holding mechanism 621 is provided at the approximate center of the 2 nd chamber 61. A grip 621a for gripping an edge portion of the wafer W is provided on the upper surface of the rotary holding mechanism 621, and the wafer W is horizontally held by the grip 621a in a state slightly separated from the upper surface of the rotary holding mechanism 621.

The rotation holding mechanism 621 includes a driving mechanism 621b, and is rotated about a vertical axis by the driving mechanism 621 b. Specifically, the driving mechanism 621b includes a motor 621b1, a pulley 621b2 attached to an output shaft of the motor 621b1, and a belt 621b3 wound around the pulley 621b2 and the outer peripheral portion of the rotation holding mechanism 621.

The driving mechanism 621b rotates the pulley 621b2 by the rotation of the motor 621b1, transmits the rotation of the pulley 621b2 to the rotation holding mechanism 621 by the belt 621b3, and rotates the rotation holding mechanism 621 about the vertical axis. Then, the rotation holding mechanism 621 rotates, and the wafer W held by the rotation holding mechanism 621 rotates integrally with the rotation holding mechanism 621. The rotation holding mechanism 621 is rotatably supported by the 2 nd chamber 61 and the recovery cup 64 via a bearing 621 c.

The fluid supply portion 622 is an elongated member inserted into a hollow portion 621d formed in the center of the rotation holding mechanism 621. A flow path 622a is formed inside the fluid supply portion 622. The nitrogen gas supply source 118 is connected to the flow path 622a via a valve 128, and the SC1 supply source 119 is connected to the flow path via a valve 129. The fluid supply unit 622 supplies nitrogen gas and SC1 (ammonia water-hydrogen peroxide aqueous solution) supplied from the nitrogen gas supply source 118 and the SC1 supply source 119 to the back surface of the wafer W through the flow path 622 a.

Here, the nitrogen gas supplied through the valve 128 is a high-temperature (for example, about 90 ℃) nitrogen gas, and is used for the volatilization acceleration process described later.

The fluid supply unit 622 is also used for transferring the wafer W. Specifically, at the base end of the fluid supply portion 622, a lifting mechanism 622b for moving the fluid supply portion 622 in the vertical direction is provided. Further, a support pin 622c for supporting the wafer W is provided on the upper surface of the fluid supply portion 622.

When the 2 nd substrate holding unit 62 receives the wafer W from the substrate transfer device 31 (see fig. 1), the wafer W is placed on the upper portions of the support pins 622c in a state where the fluid supply unit 622 is raised by the lift mechanism 622 b. Then, the 2 nd substrate holding portion 62 lowers the fluid supply portion 622 to a specific position, and then transfers the wafer W to the holding portion 621a of the rotary holding mechanism 621. When the processed wafer W is transferred to the substrate transfer device 31, the 2 nd substrate holding portion 62 raises the fluid supply portion 622 using the lift mechanism 622b, and places the wafer W held by the holding portion 621a on the support pins 622 c. Then, the 2 nd substrate holding portion 62 delivers the wafer W placed on the support pins 622c to the substrate transfer device 31.

The liquid supply unit 63 moves from the outside of the wafer W to the above of the wafer W, and supplies the processing liquid to the main surface of the wafer W held by the 2 nd substrate holding unit 62. The liquid supply unit 63 further includes nozzles 631 and 635; a robot arm 632 that horizontally supports the nozzles 631, 635; and a rotation/elevation mechanism 633 for rotating and elevating the robot arm 632.

The liquid supply unit 63 supplies an alkaline developing solution as a removing liquid from the nozzle 631 and supplies DIW as one of rinse liquids from the nozzle 635 to the wafer W. Specifically, the nozzle 631 is connected to the removal liquid supply source 116 via the valve 126, and the alkaline developer supplied from the removal liquid supply source 116 is supplied from the nozzle 631 onto the wafer W. The nozzle 635 is connected to the DIW supply source 117 via a valve 127, and DIW supplied from the DIW supply source 117 is supplied to the wafer W.

The recovery cup 64 is disposed so as to surround the rotation holding mechanism 621 in order to prevent the processing liquid from scattering around. A drain port 641 is formed in the bottom of the collection cup 64, and the processing liquid collected by the collection cup 64 is discharged from the drain port 641 to the outside of the 2 nd processing unit 6. Further, an exhaust port 642 is formed in the bottom of the recovery cup 64, and nitrogen gas supplied from the fluid supply portion 622 or gas supplied from the gas flow forming means 65 described later into the 2 nd processing unit 6 is exhausted from the exhaust port 642 to the outside of the 2 nd processing unit 6.

Further, an exhaust port 611 is formed in the bottom of the 2 nd chamber 61, and a pressure reducing device 66 is connected to the exhaust port 611. The pressure reducing device 66 is, for example, a vacuum pump, and reduces the pressure inside the 2 nd chamber 61 by suction.

The airflow forming unit 65 is an airflow generating unit that is attached to the ceiling portion of the 2 nd chamber 61 and forms a downward flow in the 2 nd chamber 61. Specifically, the airflow forming unit 65 includes: a downflow gas supply pipe 651, and a buffer chamber 652 communicating with the downflow gas supply pipe 651. The downflow gas supply pipe 651 is connected to an unillustrated downflow gas supply source. Further, a plurality of communication ports 652a for communicating the buffer chamber 652 with the 2 nd chamber 61 are formed in the bottom of the buffer chamber 652.

the gas flow forming unit 65 supplies a down-flow gas (e.g., a clean gas, dry air, or the like) to the buffer chamber 652 through the down-flow gas supply pipe 651. Then, the gas flow forming unit 65 supplies the downflow gas supplied to the buffer chamber 652 into the 2 nd chamber 61 through the plurality of communication ports 652 a. Thereby, a down flow is formed in the 2 nd chamber 61. The downflow formed in the 2 nd chamber 61 is discharged from the exhaust port 642 and the exhaust port 611 to the outside of the 2 nd processing unit 6.

Next, a specific operation of the substrate cleaning apparatus 7 will be described. Fig. 5 is a flowchart showing the processing procedure of the substrate cleaning process performed by the substrate cleaning apparatus 7. Fig. 6A to 6C are explanatory views of the operation of the 1 st processing unit 5, and fig. 7A, 7B, and 8A to 8C are explanatory views of the operation of the 2 nd processing unit 6. More specifically, fig. 6A to 6C show an example of the operation of the film formation processing liquid supply process (step S106) in fig. 5, fig. 7A shows an example of the operation of the evaporation promotion process (step S109) in fig. 5, and fig. 7B shows an example of the operation of the back surface cleaning process (step S110) in fig. 5.

Fig. 8A shows an example of the operation of the removal liquid supply process (step S111) in fig. 5, fig. 8B shows an example of the operation of the rinsing process (step S112) in fig. 5, and fig. 8C shows an example of the operation of the drying process (step S113) in fig. 5. The respective processing steps shown in fig. 5 are performed under the control of the control device 8.

In the substrate cleaning apparatus 7 according to embodiment 1, the processes from the 1 st carry-in process (step S101) to the 1 st carry-out process (step S107) are performed in the 1 st processing unit 5, and the processes from the 2 nd carry-in process (step S108) to the 2 nd carry-out process (step S114) are performed in the 2 nd processing unit 6.

As shown in fig. 5, the 1 st processing unit 5 first performs the 1 st carry-in process (step S101). In the 1 st carry-in process, after the recovery cup 56 is lowered and the substrate transport apparatus 31 places the wafer W on the suction holder 521, the suction holder 521 suction-holds the wafer W. At this time, the wafer W is held by the suction holding portion 521 with the circuit formation surface facing upward. Then, the 1 st substrate holding portion 52 is rotated by the driving portion 523. Thus, the wafer W is horizontally held by the 1 st substrate holding portion 52 and is rotated simultaneously with the 1 st substrate holding portion 52.

Subsequently, the chemical solution processing is performed in the 1 st processing unit 5 (step S102). In the chemical solution treatment, the nozzle 531 of the liquid supply portion 53 is positioned above the center of the wafer W. Then, DHF as a cleaning liquid is supplied from the nozzle 531 to the main surface of the wafer W. The DHF supplied to the main surface of the wafer W is spread on the main surface of the wafer W by a centrifugal force caused by the rotation of the wafer W. This causes the DHF to dissolve the unnecessary film on the entire main surface of the wafer W. That is, the surface of the base film on the main surface of the wafer W or the surface of the fine particles is dissolved by DHF, and therefore the adhesion of the fine particles is weakened, and the fine particles can be easily removed.

The chemical used in the chemical processing in step S102 (DHF in this case) is used under conditions where the etching amount is smaller than that of a chemical used in a normal chemical cleaning in which cleaning is performed by chemical action. Therefore, erosion of the base film can be suppressed as compared with the normal chemical cleaning, and more effective removal of particles can be performed.

Thus, by performing the chemical liquid processing in step S102, the fine particles can be removed more effectively than when the chemical liquid processing in step S102 is not performed. The chemical processing in step S102 is not necessarily performed.

The chemical used in the chemical treatment in step S102 is not limited to DHF, as long as it dissolves the wafer W, the material constituting the wafer W, or the foreign matter adhering to the wafer W. Here, the "material formed on the wafer W" is, for example, an underlying film of the wafer W, and the "foreign matter adhering to the wafer W" is, for example, a particulate metal-based contaminant (fine particle). Examples of the chemical solution include, in addition to DHF, ammonium fluoride, hydrochloric acid, sulfuric acid, hydrogen peroxide, phosphoric acid, acetic acid, nitric acid, and ammonia water.

Next, in the 1 st processing unit 5, a rinsing process of rinsing the main surface of the wafer W with DIW is performed (step S103). In the rinsing process, the nozzle 534 is located above the center of the wafer W. Then, by opening the valve 122 (see fig. 3) for a predetermined time, the DIW is supplied from the nozzle 534 of the liquid supply unit 53 to the main surface of the rotating wafer W, and the DHF remaining on the wafer W is rinsed.

Next, the 1 st processing unit 5 performs a replacement process (step S104). In the replacement process, the nozzle 535 is located above the center of the wafer W. Then, the valve 123 (see fig. 3) is opened for a predetermined time, IPA is supplied from the nozzle 535 of the liquid supply unit 53 to the main surface of the rotating wafer W, and DIW on the wafer W is replaced with IPA. Then, the rotation of the wafer W is stopped in a state where IPA remains on the wafer W. When the replacement process is completed, the nozzle 535 moves to the outside of the wafer W.

Subsequently, the solvent supply process is performed in the 1 st processing unit 5 (step S105). The solvent supply process is a process of supplying MIBC having affinity with an overcoat liquid of the film formation process liquid to the wafer W before supplying the overcoat liquid to the wafer W.

Specifically, the nozzle 544 of the liquid supply unit 54 is positioned above the center of the wafer W, and thereafter, the MIBC is supplied from the nozzle 544 to the main surface of the wafer W. The MIBC supplied to the main surface of the wafer W is smeared on the main surface of the wafer W by a centrifugal force due to the rotation of the wafer W.

thus, by coating the wafer W with MIBC having affinity for the overcoat liquid in advance, the overcoat liquid is likely to spread on the main surface of the wafer W and also to enter into the gaps of the pattern in the film formation treatment liquid supply treatment described later. Therefore, the consumption of the overcoat liquid can be suppressed, and the fine particles entering the gaps of the pattern can be more surely removed.

MIBC has affinity for the overcoat liquid, but hardly mixes with DIW, and has low affinity. In contrast, in the 1 st processing unit 5, before the MIBC is supplied, the DIW is replaced with IPA having a higher affinity for the MIBC than the DIW. As a result, compared to the case where the solvent supply process (step S105) is performed immediately after the rinsing process (step S103), MIBC is more likely to spread on the main surface of the wafer W, and consumption of MIBC can be suppressed.

If the solvent having affinity with the film forming treatment liquid has affinity with not only the film forming treatment liquid but also DIW, the substitution treatment in step S104 may be omitted.

Therefore, the solvent supply treatment is preferably performed when it is desired to efficiently diffuse the overcoat film on the upper surface of the wafer W in a short time. The solvent supply process is not necessarily performed.

In the solvent supply process, the drain 561 of the recovery cup 56 (see fig. 3) is connected to the recovery line via the not-shown switching valve 15. Thus, the MIBC scattered from the wafer W by the centrifugal force is discharged from the drain 561 of the recovery cup 56 to the recovery pipe via the switching valve.

Next, the process of supplying the film forming process liquid is performed in the 1 st process unit 5 (step S106). In the film formation processing liquid supply process, the nozzle 541 of the liquid supply unit 54 is positioned above the center of the wafer W. Then, as shown in fig. 6A, an overcoat liquid of the film forming treatment liquid is supplied from a nozzle 531 to the main surface of the wafer W on which the circuit forming surface of the resist film is not formed.

The overcoat liquid supplied to the main surface of the wafer W is diffused on the main surface of the wafer W by a centrifugal force generated by the rotation of the wafer W. As a result, as shown in fig. 6B, a liquid film of the overcoat liquid is formed on the entire main surface of the wafer W. At this time, the main surface of the wafer W is in a state of improved wettability by the MIBC supplied onto the wafer W in step S105. This makes it easy for the overcoat liquid to diffuse on the main surface of the wafer W and to enter into the gaps between the patterns. Therefore, the amount of the overcoat liquid used can be suppressed, and fine particles entering the gaps of the pattern can be removed more reliably. In addition, the processing time of the film forming processing liquid supply processing can be shortened.

Then, the volatile component is volatilized by the rotation of the wafer W, and the overcoat liquid is cured. Thereby, the overcoat film is formed on the entire main surface of the wafer W. After the film formation processing liquid supply process is completed, the nozzle 531 is moved outward of the wafer W.

However, as shown in fig. 6B, the top coat liquid supplied to the main surface of the wafer W slightly penetrates the back surface of the wafer W from the edge portion of the wafer W. Therefore, the outer coating film is formed on the bevel portion or the edge portion on the back surface side of the wafer W.

In the first processing unit 5, after the top coat liquid is supplied from the nozzle 531 to the main surface of the wafer W, the removing liquid (here, the alkaline developer) is supplied from the liquid supply portion 55 to the edge portion on the back surface side of the wafer W as shown in fig. 6C. The alkaline developer is supplied to the edge portion on the back surface side of the wafer W, and then penetrates from the bevel portion of the wafer W into the edge portion on the main surface side. Thereby, the overcoat film or the overcoat liquid adhering to the edge portion on the back surface side, the inclined surface portion, and the edge portion on the main surface side of the wafer W is removed. Then, the rotation of the wafer W is stopped.

Subsequently, the 1 st processing unit 5 performs the 1 st unloading process (step S107). In the 1 st carry-out process, the recovery cup 56 is lowered, and the wafer W held by the 1 st substrate holding portion 52 is delivered to the substrate transport device 31. The wafer W is carried out from the 1 st processing section 5 in a state where the overcoat liquid is solidified on the circuit forming surface to form an overcoat film.

Subsequently, the 2 nd processing unit 6 performs the 2 nd carry-in processing (step S108). In the 2 nd carrying-in process, after the wafer W is placed on the support pins 622c of the fluid supply portion 622 by the substrate transport device 31, the holding portion 621a of the rotary holding mechanism 621 holds the wafer W. At this time, the wafer W is held by the holding portion 621a with the circuit formation surface facing upward. Then, the rotation holding mechanism 621 is rotated by the driving mechanism 621 b. Thus, the wafer W is horizontally held by the rotation holding mechanism 621 and is rotated simultaneously with the rotation holding mechanism 621.

Next, the volatilization acceleration process is performed in the 2 nd processing unit 6 (step S109). The evaporation acceleration treatment is a treatment for accelerating further evaporation of the volatile component contained in the overcoat liquid forming the film on the entire main surface of the wafer W. Specifically, as shown in fig. 7A, the valve 128 (see fig. 4) is opened at a predetermined time, and high-temperature nitrogen gas is supplied from the fluid supply portion 622 to the back surface of the rotating wafer W. Thereby, the overcoat liquid is heated simultaneously with the wafer W to promote volatilization of the volatile component.

The pressure in the 2 nd chamber 61 is reduced by the pressure reducing device 66 (see fig. 4). This also promotes volatilization of volatile components. In the substrate cleaning process, a downflow gas is supplied from the gas flow forming unit 65. The downflow gas can reduce the humidity in the gas flow forming unit 65 and promote volatilization of the volatile component.

When the volatile component is volatilized, the overcoat liquid is cured or hardened while contracting in volume, to form an overcoat film. This removes particles adhering to the wafer W and the like from the wafer W and the like.

thus, in the substrate cleaning apparatus 7, the time until the film forming processing liquid is cured or hardened can be shortened by promoting the volatilization of the volatile component contained in the film forming processing liquid. Further, since the shrinkage and hardening of the synthetic resin contained in the film forming solution are promoted by heating the wafer W, the shrinkage rate of the film forming solution can be further increased as compared with the case where the wafer W is not heated.

The fluid supply unit 622, the pressure reducing device 66, and the airflow forming unit 65 are examples of "volatilization promotion units". Here, the 2 nd processing unit 6 is provided with the fluid supply unit 622, the pressure reducing device 66, and the airflow forming means 65 as the volatilization acceleration portions, but the 2 nd processing unit 6 may be provided with any of these configurations.

although the example of the case where the volatilization acceleration process is performed in the 2 nd processing unit 6 is shown here, the volatilization acceleration process may be omitted. That is, the No. 2 treatment part 6 may be kept on standby until the top coat liquid is naturally cured or hardened. Further, the volatilization of the top coat liquid may be promoted by stopping the rotation of the wafer W or rotating the wafer W at a rotation speed such that the top coat liquid is thrown off and the main surface of the wafer W is not exposed.

Next, the second processing unit 6 performs a back surface cleaning process (step S110). In the back surface cleaning process, the valve 129 (see fig. 4) is opened for a predetermined time, and the SC1 is supplied from the fluid supply unit 622 to the back surface of the rotating wafer W (see fig. 7B). Thereby, the back surface of the wafer W is cleaned. The SC1 supplied to the back surface of the wafer W is discharged from the drain port 641 of the collection cup 64 to the waste liquid line via a switching valve not shown. The fluid supply unit 622 is also an example of a back surface cleaning unit that supplies a cleaning liquid to the center of the back surface of the wafer W held by the holding unit 621 a.

Thus, in the substrate cleaning apparatus 7 according to embodiment 1, the film formation processing liquid supply process is performed in the 1 st processing unit 5 of the suction holding unit 521 which suctions and holds the back surface of the wafer W. Therefore, as compared with a case where a substrate holding unit of a type for gripping the edge portion of the wafer W is used, such as the 2 nd substrate holding unit 62 provided in the 2 nd processing unit 6, for example, coating omission of the overcoat liquid does not occur in the edge portion of the wafer W. Further, since the overcoat liquid does not adhere to the substrate holding portion, the wafer W is not likely to be contaminated by the substrate holding portion holding the wafer W to which the overcoat liquid has adhered.

In the substrate cleaning apparatus 7 according to embodiment 1, the back surface cleaning process is performed in the 2 nd processing unit 6 provided with the rotation holding mechanism 621 that holds the edge portion of the wafer W. Therefore, the dirt on the back surface of the wafer W, particularly the dirt generated by the suction holding portion 521 of the 1 st processing unit 5, can be removed.

In the substrate cleaning apparatus 7 according to embodiment 1, the back surface of the wafer W is cleaned in a state where the main surface of the wafer W is covered with the cured or hardened overcoat liquid. Therefore, even if the cleaning liquid is scattered during the back surface cleaning process, the cleaning liquid can be prevented from adhering to the main surface of the wafer W and contaminating the main surface of the wafer W. In addition, the main surface of the wafer W can be prevented from being contaminated by the penetration of the cleaning liquid.

Here, although an example of the case where the back surface cleaning process is performed after the volatilization promotion process is described, the back surface cleaning process may be performed after the 2 nd carrying-in process and before the volatilization promotion process.

Next, the removal liquid supply process is performed in the 2 nd processing unit 6 (step S111). In the removal liquid supply process, as shown in fig. 8A, the nozzle 631 is positioned above the center of the wafer W. Then, the valve 126 (see fig. 4) is opened for a predetermined time, whereby the alkaline developer as the removing liquid is supplied from the nozzle 631 onto the rotating wafer W. Therefore, the overcoat film formed on the wafer W is dissolved and removed.

At this time, since the wafer W and the particles generate electromotive forces of the same polarity, the wafer W and the particles repel each other, and the particles are prevented from being reattached to the wafer W.

Thus, the removal liquid scattered from the wafer W by the centrifugal force is discharged from the drain port 641 of the recovery cup 64 to the recovery pipe via a switching valve not shown. The removal liquid discharged to the recovery line is reused.

further, after the drain 641 is connected to the waste liquid line at a specific time from the start of supply of the removing liquid to the sufficient removal of the overcoat film, the drain 641 may be connected to the recovery line. This prevents the outer coating film from being mixed into the reused removing liquid.

next, in the 2 nd processing unit 6, a rinsing process of rinsing the main surface of the wafer W with DIW is performed (step S112). In the rinsing process, as shown in fig. 8B, the nozzle 635 is positioned above the center of the wafer W. Then, the valve 127 (see fig. 4) is opened for a predetermined time, and DIW is supplied from the nozzle 635 of the liquid supply unit 63 to the main surface of the rotating wafer W, thereby rinsing the overcoat film or the alkaline developer remaining on the wafer W.

Specifically, the DIW supplied onto the wafer W is scattered to the outside of the wafer W while being spread on the wafer W by the rotation of the wafer W. By this rinsing treatment, particles floating in the dissolved overcoat film or the alkaline developer are removed from the wafer W together with the DIW. At this time, the interior of the 2 nd chamber 61 can be rapidly exhausted by the downflow formed by the airflow forming unit 65. When the rinsing process is completed, the nozzle 635 is moved to the outside of the wafer W.

Subsequently, the drying process is performed in the 2 nd processing unit 6 (step S113). In the drying process, the rotation speed of the wafer W is increased for a predetermined time to spin off the DIW remaining on the main surface of the wafer W, and the wafer W is dried (see fig. 8C). Then, the rotation of the wafer W is stopped.

Subsequently, the 2 nd processing unit 6 performs the 2 nd unloading process (step S114). In the substrate unloading process, the fluid supply unit 622 is raised by the lift mechanism 622b (see fig. 4), and the wafer W held by the holding unit 621a is placed on the support pins 622 c. Then, the wafer W placed on the support pins 622c is transferred to the substrate transfer device 31. When the substrate carrying-out process is completed, the substrate cleaning process for one wafer W is completed. Then, the wafer W is carried out from the 2 nd processing unit 6 with the circuit forming surface exposed.

As described above, the substrate cleaning system 100 according to embodiment 1 includes the 1 st processing unit 5 and the 2 nd processing unit 6. The 1 st processing unit 5 includes a1 st substrate holding unit 52 (an example of the 1 st holding unit) for holding the wafer W, and a liquid supply unit 54 (an example of the 1 st supply unit) for supplying a processing liquid containing a volatile component for forming a film on the entire main surface of the substrate W to the wafer W. The 2 nd processing unit 6 includes a processing unit different from the 1 st processing unit 5, a 2 nd substrate holding unit 62 (an example of the 2 nd holding unit) for holding the wafer W, and a liquid supply unit 63 (an example of the 2 nd supply unit) for supplying the wafer W with a removal liquid that dissolves all the film formed by volatilizing a volatile component from the processing liquid supplied to the substrate by the liquid supply unit 53 and solidifying or hardening the volatilized volatile component on the substrate.

therefore, according to embodiment 1, particles adhering to the wafer W can be removed while suppressing pattern collapse and erosion of the base film.

In the substrate cleaning system 100 according to embodiment 1, different substrate holding units are used for the film formation treatment liquid supply process and the removal liquid supply process, respectively. Specifically, since the film formation processing liquid supply process is performed in the 1 st processing unit 5 including the suction holding unit 521 for suction holding the rear surface of the wafer W, it is possible to prevent coating omission of the overcoat liquid on the edge portion of the wafer W or adhesion of the overcoat liquid to the substrate holding unit. Further, since the removal liquid supply process is performed in the 2 nd processing unit 6 including the rotary holding mechanism 621 that holds the edge portion of the wafer W, the back surface of the wafer W can be cleaned before the removal liquid supply process, and contamination caused by the suction holding unit 521 of the 1 st processing unit 5 can be removed. In addition, the overcoat liquid can be prevented from adhering to the 2 nd holding portion.

In addition, the substrate cleaning system 100 according to embodiment 1 uses a removing liquid having alkalinity. This generates an electromotive force of the same polarity as that of the particles on the wafer W or the like, thereby preventing the particles from being reattached, and thus the efficiency of removing the particles can be improved.

Comparison with cleaning method using physical force

here, a comparison result between the 2 fluid cleaning using the physical force cleaning method and the substrate cleaning method according to embodiment 1 (hereinafter, referred to as "the present cleaning method") will be described. First, the comparison conditions will be described with reference to fig. 15A and 15B. Fig. 15A and 15B are explanatory diagrams of comparative conditions of the present cleaning method and 2-fluid cleaning.

As shown in fig. 15A and 15B, a wafer without a pattern (see fig. 15A) and a wafer with a pattern formed with a height of 0.5 μm and a width of 0.5 μm at intervals of 1.0 μm (see fig. 15B) were compared, and the particle removal rate by each cleaning method was compared between the case of performing 2-fluid cleaning and the case of performing the present cleaning method. The particle size of the fine particles was 200 nm.

Each cleaning method was performed under two conditions, namely "no damage condition" and "damaged condition". The "damage-free condition" is a condition in which a thermal oxide film having a thickness of 2nm is formed on a wafer, and a sample pattern having a height of 100nm and a width of 45nm is formed on the thermal oxide film, and cleaning is performed with a specific force not to collapse the sample pattern. The term "conditions having damage" refers to conditions under which cleaning is performed with a specific force to collapse the sample pattern.

Next, fig. 16 shows the comparison result. Fig. 16 is a graph showing the comparison result between the present cleaning method and 2 fluid cleaning. In fig. 16, the removal rate of particles from a wafer having no pattern is shown by hatching with diagonal lines on the left and the removal rate of particles from a wafer having a pattern is shown by hatching with diagonal lines on the right. Also, with the present cleaning method, collapse of the sample pattern was not generated. Therefore, the present cleaning method only shows the result of "no damage condition".

as shown in fig. 16, the particle removal rates of the present cleaning method, 2 fluid cleaning (no damage condition), and 2 fluid cleaning (damaged condition) for the unpatterned wafer were all values close to 100%, and the two cleaning methods were not significantly different from each other.

On the other hand, the particle removal rate of the 2-fluid cleaning of the wafer having a pattern was about 17% under the no-damage condition and about 32% under the damaged condition, which was significantly reduced compared to the wafer having no pattern. This makes it possible to see that the particle removal rate of the wafer having a pattern is significantly reduced as compared with the case of the wafer having no pattern, and therefore, in the 2-fluid cleaning, particles entering the gaps between the patterns are difficult to remove.

In contrast, the cleaning method shows a value close to 100% for a wafer having a pattern, as in the case of a wafer having no pattern. From this, it can be seen that the particle removal rate hardly changes between the wafer having no pattern and the wafer having a pattern, and therefore the particles entering the gaps of the pattern are appropriately removed by the present cleaning method.

Thus, according to the cleaning method, compared with the 2-fluid cleaning, not only the pattern collapse is not caused, but also the fine particles entering between the patterns can be appropriately removed.

Comparison with cleaning method Using chemical action

Next, chemical cleaning using SC1 (ammonia water-hydrogen peroxide aqueous solution) which is a chemical cleaning method, and comparison of this cleaning method will be described. Fig. 17 and 18 are graphs showing the results of comparison between the cleaning method and the chemical cleaning. Fig. 17 shows the results of comparison of the removal rates of fine particles, and fig. 18 shows the results of comparison of the film loss. The film loss refers to an erosion depth of a thermally oxidized film of a base film formed on a wafer.

Then, the chemical solution is washed so as to use a washing liquid having a volume ratio of 1: 2: SC1 in which ammonia, water and hydrogen peroxide were mixed at a ratio of 40 was washed at a temperature of 60 ℃ for a supply time of 600 seconds. In the cleaning method, after the overcoat liquid is supplied, the evaporation-promoting treatment is performed, and then the alkaline developer is supplied for 10 seconds. The wafer used was the wafer with the pattern shown in fig. 15B.

As shown in fig. 17, it can be seen that the removal rate of fine particles by the chemical cleaning was 97.5%, which was slightly lower than the removal rate of fine particles (98.9%) by the present cleaning method, but unlike the above 2-fluid cleaning, fine particles entering the gaps of the pattern were appropriately removed.

As shown in fig. 18, although film loss (angstrom) was generated as a result of chemical cleaning, no film loss was generated by the cleaning method. This makes it possible to remove particles that have entered the gaps between the patterns without eroding the base film.

As described above, according to the cleaning method, it is more effective than the cleaning method using physical force or the cleaning method using chemical action in a point where it is possible to prevent pattern collapse and erosion of the base film and to appropriately remove particles entering into the gap between patterns.

In embodiment 1 described above, an example is shown in which the 1 st holding unit provided in the 1 st processing unit 5 is a vacuum chuck for suction-holding the wafer W, and the 1 st holding unit provided in the 1 st processing unit 5 is not limited to the vacuum chuck. For example, the 1 st holding portion may be a mechanical chuck that grips the edge portion of the wafer W, or may be a holding portion that supports the edge portion on the back surface side of the wafer W (that is, only the wafer W is placed), as in the 2 nd substrate holding portion 62 provided in the 2 nd processing unit 6.

In embodiment 1, after the chemical solution process (step S102 in fig. 5), the rinsing process, the replacement process, and the solvent supply process (steps S103 to S105 in fig. 5) are performed, and the film formation process liquid supply process (step S106 in fig. 5) is performed. However, the 1 st processing unit 5 may perform the film formation processing liquid supply process without performing the rinsing process, the replacement process, and the solvent supply process after the chemical liquid process.

Although embodiment 1 shows an example in which the process of supplying SC1 to the back surface of wafer W is performed as the back surface cleaning process, the back surface cleaning process is not limited to the above process. For example, brush cleaning using a brush, 2-fluid cleaning using 2-fluid nozzles for atomizing a cleaning liquid with a gas and spraying the cleaning liquid onto the back surface of the wafer W, ultrasonic cleaning using an ultrasonic vibrator or the like, or the like may be performed as the back surface cleaning process.

In embodiment 1, an example of a case where the back surface cleaning process is performed in a state where the main surface of the wafer W is covered with the overcoat film is described. However, the processing performed in this state is not limited to the back surface cleaning processing, and may be, for example, a polishing processing for polishing the back surface or the inclined surface portion of the wafer W using a polishing brush, an etching processing for etching the back surface or the inclined surface portion of the wafer W using a chemical solution, or the like. The etching treatment is a treatment of removing an oxide film using, for example, hydrofluoric acid (HF).

Thus, by processing the other surface of the wafer W in a state where the entire main surface of the wafer W is covered with the overcoat film, the main surface of the wafer W can be prevented from being contaminated, and the other surface of the wafer W can be processed. Further, since the etching process is performed in a state where the main surface of the wafer W is covered with the overcoat film, even if the chemical solution penetrates from the back surface side to the main surface side of the wafer W, the main surface of the wafer W is protected by the overcoat film and thus is not etched. Thus, the etching region is determined by the overcoat film, and thus etching can be performed with high accuracy.

Embodiment mode 2

The configuration of the substrate cleaning apparatus is not limited to the configuration described in embodiment 1. Here, another configuration of the substrate cleaning apparatus will be described with reference to fig. 9. Fig. 9 is a schematic diagram showing the structure of the substrate cleaning apparatus according to embodiment 2. In the following description, the same portions as those already described are denoted by the same reference numerals as those already described, and redundant description thereof will be omitted.

As shown in fig. 9, the 2 nd processing unit according to embodiment 2 includes a liquid supply unit 63A instead of the liquid supply unit 63 included in the 2 nd processing unit 6 (see fig. 4) according to embodiment 1.

The liquid supply unit 63A includes a nozzle 634 in addition to the nozzles 631 and 635. The nozzle 634 is supported by the robot 632 in an inclined manner, and the ejection port faces the edge of the wafer W when the nozzle 631 is positioned above the center of the wafer W. In addition, the nozzle 634 is an example of the 3 rd supply part.

The removal liquid supply source 116 (see fig. 4) is connected to the nozzle 634 via a valve (not shown). Then, the nozzle 634 discharges the alkaline developer supplied from the removing liquid supply source 116 toward the edge of the wafer W. Thus, the alkaline developer is supplied to the grip 621a at a sufficient flow rate and flow velocity to clean the grip 621 a.

The valve connected to the nozzle 634 is different from the valve 126 (see fig. 4) connected to the nozzle 631. Therefore, the supply start timing and the supply stop timing of the alkaline developer can be controlled by the nozzle 631 and the nozzle 634, respectively. The other configurations are the same as those of the 2 nd processing unit 6 according to embodiment 1, and therefore, the description thereof is omitted here.

The processing unit 2 according to embodiment 2 performs the cleaning process of the grip 621a by using the liquid supply unit 63A under the control of the control device 8. Specifically, in the removal liquid supply process (step S111 in fig. 5), after the nozzle 631 is positioned above the center of the wafer W, the valve 126 (see fig. 4) and the valve not shown connected to the nozzle 634 are opened at a predetermined time, and the alkaline developer as the removal liquid is supplied from the nozzle 631 to the rotating wafer W and from the nozzle 634 to the edge of the wafer W.

Thereby, the overcoat film attached to the grip portion 621a is dissolved and removed from the grip portion 621 a. That is, the grip 621a is cleaned.

The valve connected to the nozzle 634 is latched before the valve 126 (see fig. 4). Thus, the supply of the alkaline developer from the nozzle 634 to the holding portion 621a is stopped before the supply of the alkaline developer from the nozzle 631 to the wafer W.

Thus, even if the overcoat film adhering to the grip 621a is removed by the alkaline developer supplied from the nozzle 634 and is scattered toward the wafer W, the alkaline developer supplied from the nozzle 631 can be prevented from adhering to the wafer W and washed away.

Thus, according to the substrate cleaning apparatus of embodiment 2, since the nozzle 634 for supplying the alkaline developer to the holding portion 621a is further provided, the overcoat film attached to the holding portion 621a can be removed, and contamination, dust emission, and the like of the wafer W can be prevented.

Here, although an example is shown in which the supply of the alkaline developer from the nozzle 634 to the grip 621a is stopped before the supply of the alkaline developer from the nozzle 631 to the wafer W is stopped, the timing of stopping the nozzle 634 is not limited to this. For example, even before the end of the rinsing process, the supply of the alkaline developer from the nozzle 634 to the grip 621a may be stopped before the stop of the supply of the DIW from the nozzle 631 to the wafer W. Even in this case, the outer coating film removed from the grip 621a can be rinsed by the DIW supplied from the nozzle 631, and the adhesion to the wafer W can be prevented.

Thus, the supply of the alkaline developer from the nozzle 634 to the holding portion 621a is stopped before the supply of the processing liquid (alkaline developer or DIW) from the nozzle 631 to the wafer W is stopped.

Embodiment 3

Next, a substrate cleaning apparatus according to embodiment 3 will be described. Fig. 10A and 10B are schematic views showing modifications of the rotation holding mechanism provided in the 2 nd processing unit.

As shown in fig. 10A, the 2 nd processing unit according to embodiment 3 includes a rotation holding mechanism 621' instead of the rotation holding mechanism 621 included in the 2 nd processing unit 6 (see fig. 4) according to embodiment 1. The other configurations are the same as those of the 2 nd processing unit 6, and therefore, the description thereof is omitted here.

The rotation holding mechanism 621' includes: the 1 st gripping portion 621e that holds the wafer W and the 2 nd gripping portion 621f that can operate independently of the 1 st gripping portion 621e are used instead of the gripping portion 621a provided in the rotation holding mechanism 621.

The 1 st gripping portions 621e are provided in plural at equal intervals along the circumferential direction of the wafer W, and 3 are provided at 120-degree intervals, and are configured to be movable along the radial direction of the wafer W. The 2 nd gripping portion 621f is disposed at an equal interval from the 1 st gripping portion 621e, and is movable in the radial direction of the wafer W as in the 1 st gripping portion 621 e.

Thus, the processing unit 2 according to embodiment 3 includes two independently operable gripping units, and can use these to transfer the wafer W.

For example, fig. 10A shows a state where the wafer W is held by the 1 st gripping portion 621 e. In this state, the 2 nd gripping part 621f is moved in a direction close to the wafer W, and then the 1 st gripping part 621e is moved in a direction away from the wafer W, whereby the wafer W can be transferred from the 1 st gripping part 621e to the 2 nd gripping part 621f as shown in fig. 10B.

Next, the timing of transferring the wafer W will be described with reference to fig. 11A to 11C. Fig. 11A is a diagram showing the timing of transferring the wafer W. Fig. 11B and 11C are diagrams showing other examples of the timing of transferring the wafer W.

as shown in fig. 11A, the wafer W is transferred between the 1 st and 2 nd gripping portions 621e and 621f at a specific timing in the removal liquid supply process (step S110 in fig. 5). Specifically, after the removal liquid supply process is started, the overcoat film is washed away by the alkaline developer to some extent, and the 2 nd grip 621f is moved in a direction close to the wafer W and then the 1 st grip 621e is moved in a direction away from the wafer W at a point in time when there is no possibility that the overcoat film adheres to the 2 nd grip 621 f.

Thus, in embodiment 3, the wafer W is transferred between the 1 st gripping part 621e and the 2 nd gripping part 621 f. Therefore, even if the overcoat film is attached to the 1 st gripping portion 621e, the overcoat film is transferred to the 2 nd gripping portion 621f, and thus contamination, dust emission, or the like of the wafer W can be prevented.

Further, as shown in fig. 11B, the transfer from the 1 st grip 621e to the 2 nd grip 621f may be performed immediately after the back surface cleaning process is completed, or as shown in fig. 11C, the transfer may be performed immediately after the volatilization acceleration process is completed. Since the overcoat liquid is solidified and hardly adheres to the 2 nd gripping portion 621f, contamination, dust emission, and the like of the wafer W can be prevented even immediately after the evaporation promotion process is completed.

The 2 nd processing unit according to embodiment 3 may include a nozzle for supplying the alkaline removing liquid to the 1 st gripping part 621e, as in the 2 nd processing unit according to embodiment 2, and the 1 st gripping part 621e may be periodically cleaned using the nozzle. It is preferable that the cleaning process is performed in a state where the wafer W is not present in the 2 nd chamber 61.

Embodiment 4

In the above embodiments, the case where the film formation process liquid supply process is performed in the 1 st process unit and the volatilization promotion process and the removal liquid supply process are performed in the 2 nd process unit is described as an example. However, the volatilization acceleration treatment may be performed in the 1 st treatment section. In the following description, a modification of the case where the volatilization acceleration function is provided in the 1 st processing section will be described with reference to fig. 12A and 12B. Fig. 12A and 12B are views showing modifications of the case where the 1 st processing unit is provided with the function of promoting volatilization.

As shown in fig. 12A, for example, the 1 st processing unit includes a1 st substrate holding unit 52A instead of the 1 st substrate holding unit 52. The heating unit 521A1 is provided in the suction holding unit 521A of the 1 st substrate holding unit 52A, and the volatilization promotion process is performed by the heating unit 521A 1. That is, the overcoat liquid is heated by the heating unit 521A 1. The heating temperature in this case is, for example, 90 ℃. This promotes the volatilization of the volatile components contained in the overcoat liquid.

Thus, by providing the heating unit 521A1 in the suction-holding unit 521A, the suction-held wafer W can be directly heated, and therefore volatilization of the volatile component contained in the overcoat liquid can be more effectively promoted. The heating unit 521a1 is an example of a volatilization promoting unit.

As shown in fig. 12B, the 1 st processing unit may further include an ultraviolet irradiation unit 57 as a volatilization promotion unit. The ultraviolet irradiation unit 57 is, for example, a uv (ultra violet) lamp, is disposed above the wafer W, and irradiates the main surface of the wafer W with ultraviolet rays from above the wafer W. This activates the overcoat liquid to promote volatilization of the volatile component.

The ultraviolet irradiation unit 57 is preferably disposed at a position higher than the nozzles 531 and 541 of the liquid supply units 53 and 54 so as to block the processing of the liquid supply units 53 and 54. Alternatively, the ultraviolet irradiation unit 57 may be configured to be movable only above the wafer W during the evaporation promotion process.

In addition, the treatment part 1 may include an airflow forming means or a pressure reducing device as a volatilization acceleration part, as in the treatment part 2 6. The 1 st processing unit may include a nozzle for supplying high-temperature nitrogen gas from above the wafer W to the main surface of the wafer W, or a heating unit such as a heater may be disposed above the wafer W.

Embodiment 5

In each of the above embodiments, the volatilization acceleration process is performed in either of the 1 st processing unit and the 2 nd processing unit, but the substrate cleaning apparatus may further include a processing unit for accelerating the volatilization process. An example of this case is explained with reference to fig. 13. Fig. 13 is a schematic diagram showing a schematic configuration of a substrate cleaning system according to embodiment 5.

As shown in fig. 13, the substrate cleaning system 100 'according to embodiment 5 includes a processing station 3' instead of the processing station 3 (see fig. 1). Then, a substrate cleaning apparatus 7 'is provided in the processing station 3' in place of the substrate cleaning apparatus 7. The other configuration is the same as the substrate cleaning system 100.

The substrate cleaning apparatus 7 ' includes three processing units of the 1 st processing unit 5 ', the 2 nd processing unit 6 ', and the 3 rd processing unit 9. The 1 st processing unit 5 ', the 2 nd processing unit 6 ', and the 3 rd processing unit 9 are arranged in the order of the 1 st processing unit 5 ', the 3 rd processing unit 9, and the 2 nd processing unit 6 ' in the front-rear direction of the substrate cleaning system 100 '. However, the arrangement of the 1 st processing unit 5 ', the 2 nd processing unit 6', and the 3 rd processing unit 9 is not limited to the illustrated arrangement.

The 1 st processing unit 5' has the same configuration as the 1 st processing unit 5 according to embodiment 1, for example. The 2 nd processing unit 6' has a configuration in which, for example, the configuration (the nitrogen gas supply source 118, the valve 128, the gas flow forming means 65, the pressure reducing device 66, and the like) related to the volatilization acceleration processing is removed from the 2 nd processing unit 6 according to embodiment 1.

The 3 rd processing unit 9 is a processing unit for promoting the volatilization process. An example of the structure of the 3 rd processing unit 9 will be described with reference to fig. 14. Fig. 14 is a schematic diagram showing an example of the structure of the 3 rd processing unit 9.

As shown in fig. 14, the 3 rd processing unit 9 includes a base 92 and a hot plate 93 in the 3 rd chamber 91. The base 92 is disposed at the bottom of the 3 rd chamber 91 and supports the hot plate 93 at a predetermined height.

The hot plate 93 includes a heating portion 931 therein. Further, support pins 932 for supporting the wafer W are provided on the upper surface of the heating portion 931.

In the substrate cleaning apparatus 7' according to embodiment 5, after the 1 st unloading process shown in step S106 of fig. 5, the wafer W is carried into the 3 rd processing part 9 by the substrate transfer apparatus 31 and placed on the support pins 932 of the hot plate 93. Then, in the 3 rd processing unit 9, the hot plate 93 heats the wafer W. Thereby, the top coating liquid is heated together with the wafer W to promote volatilization of the volatile component.

Thus, the substrate cleaning apparatus may be provided with a1 st processing unit for performing a process of supplying the film forming process liquid, a 2 nd processing unit for performing a process of supplying the removing liquid, and a 3 rd processing unit for performing a process of promoting volatilization.

the configuration of the 3 rd processing unit 9 is not limited to that shown in fig. 14. For example, the 3 rd processing unit 9 may be configured to include a substrate holding unit similar to the 2 nd substrate holding unit 62 included in the 2 nd processing unit 6, and to heat the wafer W by supplying high-temperature nitrogen gas from the gas supply unit to the back surface of the wafer W. The 3 rd processing unit 9 may be provided with an airflow forming means, a pressure reducing device, an ultraviolet irradiation unit, or the like as a volatilization acceleration unit.

In the above embodiments, the chemical liquid process and the film formation process liquid supply process are performed in the 1 st processing unit, but the chemical liquid process may be performed in another unit configured separately from the 1 st processing unit. The chemical liquid treatment may be performed in the 2 nd treatment unit. In this case, the liquid supply unit 53 and the like may be provided in the 2 nd processing unit.

In the above embodiments, the case of supplying the overcoat liquid and the alkaline developer to the main surface of the wafer W is described as an example, but the overcoat liquid and the alkaline developer may be supplied to both surfaces of the wafer W in the 1 st processing unit and the 2 nd processing unit. In this case, the 1 st and 2 nd processing units may be provided with a mechanical jig such as the 2 nd substrate holding unit 62, and the overcoat liquid and the alkaline developing liquid may be supplied from the fluid supply portion, respectively.

Further, by providing the lower plate covering the wafer W, the gap formed between the wafer W and the base plate can be filled with the overcoat liquid or the alkaline developer, and the overcoat liquid or the alkaline developer can be efficiently diffused to the back surface of the wafer W. In the case where the 1 st processing section 5 is provided with a base plate, a heating section may be provided on the base plate, and the volatilization acceleration processing may be performed using the heating section.

Other embodiments

However, in the above embodiments, the case where the overcoat liquid is used as the film formation treatment liquid has been described, but the film formation treatment liquid is not limited to the overcoat liquid.

For example, the film forming treatment liquid may be a treatment liquid containing a phenol resin. Since this phenol resin causes hardening shrinkage in the same manner as the acrylic resin, it is effective in the point of supplying tensile force to the fine particles in the same manner as the overcoat liquid.

As the film-forming treatment liquid containing a phenol resin, for example, a resist is used. The resist is a film forming processing liquid for forming a photoresist film on the wafer W. Specifically, the resist contains a novolac-type phenol resin.

When a resist is used as the film formation treatment liquid, a thinner that can dissolve the resist may be used as the removal liquid. In the case where a diluent is used as the removing liquid, the rinsing process after the removing liquid supplying process can be omitted. In the case of using a resist as the film forming treatment liquid, the removal liquid may be supplied after the resist film formed on the wafer W is subjected to an exposure treatment such as blanket exposure. In this case, the removing solution may be a developing solution or a diluent.

The synthetic resin contained in the film-forming treatment liquid is not limited to the acrylic resin or the phenol resin as described above as long as it is cured and shrunk. For example, the synthetic resin contained in the film-forming treatment liquid may be an epoxy resin, a melamine resin, a urea resin, an unsaturated polyester resin, an alkyd resin, a polyurethane, a polyimide, a polyethylene, a polypropylene, a polyvinyl chloride, a polystyrene, a polyvinyl acetate, a polytetrafluoroethylene, an acrylonitrile-butadiene-styrene resin, an acrylonitrile-styrene resin, a polyamide, a nylon, a polyacetal, a polycarbonate, a modified polyphenylene ether, a polybutylene terephthalate, a polyethylene terephthalate, a polyphenylene sulfide, a polysulfone, a polyether ether ketone, a polyamideimide, or the like.

In addition, an anti-reflection coating solution may be used as the processing solution for film formation. The anti-reflection coating solution is a film forming treatment solution for forming an anti-reflection film on the wafer W. The antireflection film is a protective film for reducing reflection on the main surface of the wafer W and increasing transmittance. When the anti-reflection coating solution is used as a processing solution for film formation, DIW capable of dissolving the anti-reflection coating solution can be used as a removing solution.

The film formation processing liquid may contain a specific chemical solution that dissolves the wafer W, a material constituting the wafer W, or foreign matter adhering to the wafer W, in addition to volatile components and synthetic resin. As described above, the "material formed on the wafer W" is, for example, the base film of the wafer W, and the "foreign matter adhering to the wafer W" is, for example, particulate metallic contaminants (fine particles). Examples of the "specific chemical solution" include hydrogen fluoride, ammonium fluoride, hydrochloric acid, sulfuric acid, hydrogen peroxide, phosphoric acid, acetic acid, nitric acid, and ammonia water. When the surface of the base film or the fine particles is dissolved by these chemical solutions, the adhesion of the fine particles is weakened, and therefore the fine particles can be easily removed.

The "specific chemical solution" is used under the condition that the etching amount is small as compared with the chemical solution in the normal chemical solution cleaning in which cleaning is performed only by the chemical action of the chemical solution. Therefore, the erosion of the base film can be suppressed and the fine particles can be removed more efficiently than in the case of the normal chemical cleaning.

In the above embodiments, the case where the alkaline developing solution is used as the removing solution has been described, but the removing solution may be formed by adding hydrogen peroxide to the alkaline developing solution. Thus, by adding hydrogen peroxide to the alkaline developer, surface roughening of the main surface of the wafer due to the alkaline developer can be suppressed.

The removing solution may be an organic solvent such as a diluent, toluene, acetate, alcohol, or glycol (propylene glycol monomethyl ether), or an acidic developing solution such as acetic acid, formic acid, or glycolic acid.

The removing solution may further contain a surfactant. Since the surfactant has a function of weakening the surface tension, reattachment of particles to the wafer W and the like can be suppressed.

In each of the above embodiments, the example in which the 1 st processing unit 5 and the 2 nd processing unit 6 are housed in different chambers (the 1 st chamber 51 and the 2 nd chamber 61) has been described, but the 1 st processing unit 5 and the 2 nd processing unit 6 may be housed in one chamber.

In each of the above embodiments, the wafer W is rotated by using the substrate holding portion that rotatably holds the wafer W, and the processing liquid such as the overcoat is applied to the wafer W by the centrifugal force generated by the rotation. However, the present invention is not limited to this, and the processing liquid may be applied to the wafer W without rotating the wafer W using, for example, a slit nozzle. In this case, the substrate holding unit may not include the rotation mechanism.

AI: artificial intelligence

The control unit may further include an AI (Artificial Intelligence). The AI includes a machine learning module that performs machine learning using accumulated data obtained by associating processing recipe data including various parameters, results of substrate processing performed based on the processing recipe data (inspection results of processed wafers W, etc.), sensor values acquired from various sensors during substrate processing, and the like, for example.

Thus, the AI can output, for example, processing method data that optimizes parameters so that a better test result can be obtained. Examples of parameters that can be optimized are: the temperature, flow rate, and supply time of each treatment liquid; temperature, humidity, air pressure and exhaust flow rate within the device; the transport speed, the standby time, etc. of the wafer W.

The control unit can optimize a series of substrate processes by using the optimized processing method data. For example, the proportion of the wafers W determined to be defective in the inspection process can be reduced, or the processing accuracy of the wafers W can be improved.

As the mechanical learning, for example, a known algorithm such as deep learning, SVM (Support Vector Machine), adaptive boosting (AdaBoost), Random Forest (Random Forest) or the like can be used.

Further effects, modifications, and the like of the above-described embodiments can be easily deduced by those skilled in the art. Therefore, the scope of the present invention is not limited to the specific detailed and representative embodiments described and illustrated above. Various modifications may be made without departing from the spirit or scope of the general inventive concept as defined by the appended claims and their equivalents.

Claims (12)

1. A substrate cleaning system is characterized by comprising:

A1 st processing unit including a1 st holding unit for holding a substrate and a1 st supply unit provided above the 1 st holding unit for supplying a processing liquid containing a volatile component for forming a film on the entire main surface of the substrate to the substrate;

A 2 nd processing unit including a 2 nd holding unit for holding the substrate and a 2 nd supply unit for supplying a removing liquid for dissolving all of a film formed by solidifying or hardening the processing liquid supplied from the 1 st supply unit to the substrate on the substrate after the volatile component is volatilized, and supplying a rinse liquid for removing the dissolved film remaining on the substrate and the removing liquid from the substrate, to the substrate, and the 2 nd supply unit being provided above the 2 nd holding unit; and

and a back surface cleaning unit configured to supply a cleaning liquid to a center of a back surface of the substrate held by the 2 nd holding unit.

2. The substrate cleaning system of claim 1, wherein:

The 2 nd processing unit is configured to: and performing a drying process on the substrate after the rinse liquid is supplied from the 2 nd processing unit.

3. The substrate cleaning system of claim 2, wherein:

The 2 nd holding part has a rotation holding mechanism for rotatably holding the substrate,

The 2 nd processing unit is configured to: the drying process is performed by rotating the rotary holding mechanism to spin off the rinse liquid remaining on the substrate.

4. The substrate cleaning system according to any one of claims 1 to 3, wherein:

The 2 nd supply unit includes, at one end of the 2 nd supply unit: a removal liquid supply nozzle for supplying the removal liquid to the substrate, and a rinse liquid supply nozzle for supplying the rinse liquid to the substrate.

5. A substrate cleaning system is characterized by comprising:

A1 st processing unit including a1 st holding unit for holding a substrate and a1 st supply unit provided above the 1 st holding unit for supplying a processing liquid containing a volatile component for forming a film on the entire main surface of the substrate to the substrate;

A 2 nd processing unit including a 2 nd holding unit for holding the substrate and a 2 nd supply unit for supplying a removal liquid for dissolving an entire film formed by solidifying or hardening the processing liquid supplied from the 1 st supply unit to the substrate on the substrate after the volatile component is volatilized and supplying a rinse liquid for removing the dissolved film remaining on the substrate and the removal liquid from the substrate, to the substrate, wherein the 2 nd holding unit is provided above the 2 nd holding unit, the 2 nd supply unit supplies the removal liquid to the substrate and supplies the rinse liquid to the substrate,

The 1 st holding part is provided with a suction holding part for suction holding the substrate at one end part,

The 2 nd holding portion includes a gripping portion at an edge portion thereof for gripping an edge portion of the substrate.

6. The substrate cleaning system according to claim 5, further comprising:

And a back surface cleaning unit configured to supply a cleaning liquid to a center of a back surface of the substrate held by the 2 nd holding unit.

7. the substrate cleaning system of claim 5 or claim 6, wherein:

The 2 nd treating part is also provided with a 3 rd supply part,

The 3 rd supply unit is separated from the 2 nd supply unit, and supplies the removal liquid to the grip unit provided in the 2 nd holding unit.

8. The substrate cleaning system of claim 5, wherein:

The 2 nd holding part is provided with a holding part,

A1 st gripping part for gripping an edge part of the substrate, and a 2 nd gripping part capable of operating independently of the 1 st gripping part.

9. The substrate cleaning system of claim 5 or claim 6, wherein:

The 1 st processing unit and the 2 nd processing unit are housed in different chambers, respectively.

10. A substrate cleaning system is characterized by comprising:

A1 st processing unit including a1 st holding unit for holding a substrate and a1 st supply unit provided above the 1 st holding unit for supplying a processing liquid containing a volatile component for forming a film on the entire main surface of the substrate to the substrate;

A 2 nd processing unit including a 2 nd holding unit for holding the substrate and a 2 nd supply unit for supplying a removal liquid for dissolving an entire film formed by solidifying or hardening the processing liquid supplied from the 1 st supply unit to the substrate on the substrate after the volatile component is volatilized and supplying a rinse liquid for removing the dissolved film remaining on the substrate and the removal liquid from the substrate, to the substrate, wherein the 2 nd holding unit is provided above the 2 nd holding unit, the 2 nd supply unit supplies the removal liquid to the substrate and supplies the rinse liquid to the substrate,

The 1 st processing unit further includes:

A chemical liquid supply unit for supplying a predetermined chemical liquid to the substrate,

And a pure water supply unit configured to supply pure water to the substrate.

11. the substrate cleaning system of claim 10, wherein:

the 1 st holding part is provided with a suction holding part for suction holding the substrate at one end part,

The 2 nd holding portion includes a gripping portion at an edge portion thereof for gripping an edge portion of the substrate.

12. The substrate cleaning system according to claim 10 or claim 11, further comprising:

And a back surface cleaning unit configured to supply a cleaning liquid to a center of a back surface of the substrate held by the 2 nd holding unit.