CN104925742B - The forming method of MEMS semiconductor devices - Google Patents

The forming method of MEMS semiconductor devices Download PDF

Info

Publication number
CN104925742B
CN104925742B CN201410105998.1A CN201410105998A CN104925742B CN 104925742 B CN104925742 B CN 104925742B CN 201410105998 A CN201410105998 A CN 201410105998A CN 104925742 B CN104925742 B CN 104925742B
Authority
CN
China
Prior art keywords
described
semiconductor substrate
welding pad
aluminium welding
semiconductor
Prior art date
Application number
CN201410105998.1A
Other languages
Chinese (zh)
Other versions
CN104925742A (en
Inventor
郑超
王伟
Original Assignee
中芯国际集成电路制造(上海)有限公司
中芯国际集成电路制造(北京)有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 中芯国际集成电路制造(上海)有限公司, 中芯国际集成电路制造(北京)有限公司 filed Critical 中芯国际集成电路制造(上海)有限公司
Priority to CN201410105998.1A priority Critical patent/CN104925742B/en
Publication of CN104925742A publication Critical patent/CN104925742A/en
Application granted granted Critical
Publication of CN104925742B publication Critical patent/CN104925742B/en

Links

Abstract

The present invention provides a kind of forming method at least to include: offer is formed with the first aluminium welding pad and the second aluminium welding pad puts into the first Semiconductor substrate;Second Semiconductor substrate is provided, described second Semiconductor substrate is formed attachment structure, described attachment structure and described first aluminium welding pad one_to_one corresponding;Described first aluminium welding pad and attachment structure are connected, so that described second Semiconductor substrate is bonded with described first Semiconductor substrate;Cutting the segment thickness of described second Semiconductor substrate, the cut place of described second Semiconductor substrate is corresponding with described second aluminium welding pad;Utilize deionized water that described second aluminium welding pad is carried out;Dry etching is utilized to etch the cut place of described second Semiconductor substrate so that described second semiconductor ruptures from cut, exposes described second aluminium welding pad;Described first Semiconductor substrate and the second semiconductor are carried out.Technical scheme avoids the problem that particle is attached to the surface of the second aluminium welding pad.

Description

The forming method of MEMS semiconductor devices

Technical field

The present invention relates to a kind of semiconductor technology, particularly relate to the forming method of a kind of MEMS semiconductor devices.

Background technology

In the manufacture craft of MEMS semiconductor devices, often refer to be formed with two panels the semiconductor of semiconductor device structure Substrate bonding, to together to form the IC chip of 3D structure, specifically includes:

With reference to shown in Fig. 1, it is provided that the first Semiconductor substrate 100, wherein said first Semiconductor substrate 100 includes: the first aluminium Weld pad 110 and the second aluminium welding pad 120, the surface of described first Semiconductor substrate 100, the first aluminium welding pad 110 and the weldering of the second aluminium It is also formed with insulating barrier 300 on pad 120.Wherein, described first Semiconductor substrate 100 is formed with device layer (not shown), Part-structure that can have CMOS, inductance, electric capacity or semiconductor transducer etc. in described device layer, described first aluminium welding pad 110 and second aluminium welding pad 120 be conducted with the electrode of corresponding device in described device layer.Preset described first aluminium welding pad 110 Be suitable to and second half conductor substrate bonding, the when that described second aluminium welding pad 120 being suitable to do wire bonding or On-Wafer Measurement, Contact with test probe.The concrete condition of described second aluminium welding pad 120 is with reference to details enlarged drawing in Fig. 1.

It follows that with reference to shown in Fig. 2, the insulating barrier 300 on described first Semiconductor substrate 100 surface is carried out selective etch, To expose the first aluminium welding pad 110 and region at the second aluminium welding pad 120 place, it is adapted for bonding.General, to described insulation Layer 300 is removed and is required for carrying out over etching, to guarantee the insulating barrier 300 on described first aluminium welding pad 110 and the second aluminium welding pad 120 All remove clean, and after described insulating barrier 300 is removed, also include utilizing HF deionized water solution to remove the first aluminium welding pad The process of 110 and second natural oxidizing layers on aluminium welding pad 120.

It follows that with reference to shown in Fig. 3, it is provided that the second Semiconductor substrate 200, described second Semiconductor substrate 200 include some Attachment structure 210, described attachment structure 210 and described first aluminium welding pad 110 one_to_one corresponding.Described second Semiconductor substrate 200 Also include flat part 220.General, described attachment structure 210 is formed by the surface etching the second Semiconductor substrate 200, institute State the main part that flat part 220 is described second Semiconductor substrate 200.

It follows that with reference to shown in Fig. 4, using cutter 70 to cut does not has described connection to tie in described second Semiconductor substrate 200 The region of structure 210, and the described second cut place of Semiconductor substrate 200 is corresponding with described second aluminium welding pad 220.Concrete, In the diagram, described cut place is as shown in dotted line 1,2.

It follows that with reference to shown in Fig. 5, use deionized water to be rinsed, with the second Semiconductor substrate 200 that will cut down Removing, then, described second aluminium welding pad 220 comes out.But the surface attachment of described second aluminium welding pad 220 some cut The particle 60(Silicon dust produced when cutting the second Semiconductor substrate 220).

These particles 60 are during deionized water rinsing, it is also difficult to get rid of, and these particles 60 can affect the second aluminium welding pad The contact of 220, can cause subsequent device to connect loosely, be easily caused shorted devices or other ill effect.

In conventional manner, typically by increasing in deionized water impact process, the impulsive force of deionized water makes particle 60 quilt Remove.And this can destroy the component graphics in the first Semiconductor substrate 100 and the second Semiconductor substrate 200.Rushing of deionized water Power is less, does not has to destroy situation such as Fig. 6 institute of component graphics in the first Semiconductor substrate 100 and the second Semiconductor substrate 200 Show;The impulse force of deionized water is relatively big, does not has to destroy the device figure in the first Semiconductor substrate 100 and the second Semiconductor substrate 200 The situation of shape is as shown in Figure 7.

Need to develop new technology, to solve the problem that particle 60 is attached to the surface of the second aluminium welding pad 220.

Summary of the invention

The shortcoming of prior art in view of the above, it is an object of the invention to provide the formation side of a kind of MEMS semiconductor devices Method, is used for solving, in prior art when cutting the second Semiconductor substrate, to produce particle, and described particle can be attached to the second aluminium weldering The surface of pad, it is difficult to the problem of removal.

For achieving the above object and other relevant purposes, the present invention provides the forming method of a kind of MEMS semiconductor devices, described The forming method of MEMS semiconductor devices at least includes:

First Semiconductor substrate is provided, described first Semiconductor substrate is formed the first aluminium welding pad and the second aluminium welding pad;

Thering is provided the second Semiconductor substrate, be formed with attachment structure in described second Semiconductor substrate, described attachment structure is with described First aluminium welding pad one_to_one corresponding;

Described first aluminium welding pad and attachment structure are connected, so that described second Semiconductor substrate and described first Semiconductor substrate Bonding;

Cut the segment thickness of described second Semiconductor substrate, the cut place of described second Semiconductor substrate and described second aluminium welding pad Corresponding;

Utilize deionized water that described second aluminium welding pad is carried out;

Dry etching is utilized to etch the cut place of described second Semiconductor substrate so that described second semiconductor ruptures from cut, Expose described second aluminium welding pad;

Described first Semiconductor substrate and the second semiconductor are carried out.

Alternatively, described first semiconductor substrate surface is formed with insulating barrier, described described second Semiconductor substrate being bonded in Before first Semiconductor substrate, also include the first Semiconductor substrate is performed etching, to expose the step of described first aluminium welding pad.

Alternatively, after the step to expose described first aluminium welding pad, described first aluminium welding pad and attachment structure are being connected Step before, also include utilizing HF deionized water solution to remove the autoxidation on described first aluminium welding pad and the second aluminium welding pad The step of film.

Alternatively, after the oxide-film removed on described second aluminium welding pad, also include carrying out described second aluminium welding pad with metal wire Bonding or the step that described second aluminium welding pad is connected with test probe.

Alternatively, described second aluminium welding pad includes the adhering and sealing ring peripheral around described second aluminium welding pad and is positioned at described second aluminium The test contact area at weld pad center, described test contact area is less than described adhering and sealing ring.

Alternatively, described second Semiconductor substrate includes flat part and the protuberance being connected with described flat part, described attachment structure For described protuberance.

Alternatively, in the step of the segment thickness of described second Semiconductor substrate of described cutting, the thickness of the second Semiconductor substrate is retained Degree is 20 μm~30 μm.

Alternatively, rotary washer platform is used to carry out the step that described first Semiconductor substrate and the second Semiconductor substrate are cleaned.

Alternatively, the step using rotary washer platform to carry out cleaning described first Semiconductor substrate and the second semiconductor is also wrapped Include: detect the step whether described cleaning completes.

Alternatively, described first Semiconductor substrate is formed with device layer.

As it has been described above, the forming method of the MEMS semiconductor devices of technical scheme offer, have the advantages that

By cut the second Semiconductor substrate time, the second Semiconductor substrate of member-retaining portion thickness, be the most first carried out, then Utilize dry etching that the second Semiconductor substrate is ruptured from cut, finally wash what the second Semiconductor substrate ruptured Part, thus when ensureing to cut the second Semiconductor substrate produce particle will not or few dropping on the second aluminium welding pad, keep away The problem having exempted to be difficult to remove the particle on the second aluminium welding pad.

Accompanying drawing explanation

Fig. 1 to Fig. 7 is shown as the schematic diagram of the forming method of MEMS semiconductor devices of the prior art.

The schematic diagram of the forming method of the MEMS semiconductor devices that Fig. 8 to Figure 11 is shown as in the present invention.

Element numbers explanation

100 first Semiconductor substrate

200 second Semiconductor substrate

110 first aluminium welding pads

120 second aluminium welding pads

300 insulating barriers

210 attachment structures

220 flat parts

70 cutter

60 particles

D thickness

S10~S70 step

Detailed description of the invention

Inventor, by repeatedly studying discovery, is performing etching to expose the first aluminium welding pad 110 and the to the first Semiconductor substrate Two aluminium welding pads 120, carry out over etching, and use HF deionized water described first aluminium welding pad 110 and the second aluminium welding pad 120 First aluminium welding pad 110 and the second aluminium welding pad 120 are carried out removing the first aluminium welding pad 110 and the second aluminium welding pad 120 by solution During the natural oxidizing layer of surface, the surface of the first aluminium welding pad 110 and the second aluminium welding pad 120 can by etching agent, HF go from The impact of the sub-aqueous solution so that its surface state is changed, thus the second aluminium welding pad 120 easily adsorbs cutting the second semiconductor lining The particle 60 produced during the end 200.

Thus, the invention provides the forming method of a kind of new MEMS semiconductor devices, it is to avoid the generation of the problems referred to above.

Below by way of specific instantiation, embodiments of the present invention being described, those skilled in the art can be by disclosed by this specification Content understand other advantages and effect of the present invention easily.The present invention can also be added by the most different detailed description of the invention To implement or application, the every details in this specification can also be based on different viewpoints and application, in the essence without departing from the present invention Various modification or change is carried out under god.

Refer to Fig. 8 to Figure 10.It should be noted that the diagram provided in the present embodiment illustrates the present invention the most in a schematic way Basic conception, the most graphic in component count time only display with relevant assembly in the present invention rather than is implemented according to reality, shape And size drafting, during its actual enforcement, the kenel of each assembly, quantity and ratio can be a kind of random change, and its assembly layout Kenel is likely to increasingly complex.

First, in conjunction with Fig. 8, perform step S10: provide the first Semiconductor substrate, described first Semiconductor substrate is formed the One aluminium welding pad and the second aluminium welding pad;

In the present embodiment, this step can be proceeded by by the semiconductor structure in conventional art similar to Figure 1, concrete, Include in described first Semiconductor substrate 100: the first aluminium welding pad 110 and the second aluminium welding pad 120, described first Semiconductor substrate It is also formed with insulating barrier 300 on surface, the first aluminium welding pad 110 and second aluminium welding pad 120 of 100.

Wherein, in the present embodiment, described first Semiconductor substrate 100 is silicon substrate, is formed with device layer (not shown), Part-structure that can have CMOS, inductance, electric capacity or semiconductor transducer etc. in described device layer.

Described first aluminium welding pad 110 and the second aluminium welding pad 120 are conducted with the electrode of corresponding device in described device layer.Preset Described first aluminium welding pad 110 is suitable to be bonded with other Semiconductor substrate, described second aluminium welding pad 120 be suitable to do wire bonding or The when of On-Wafer Measurement, contact with test probe.The concrete condition of described second aluminium welding pad 120 is amplified with reference to details in Fig. 1 Figure.

With continued reference to shown in Fig. 2, the insulating barrier 300 on described first Semiconductor substrate 100 surface is carried out selective etch, with Expose the first aluminium welding pad 110 and region at the second aluminium welding pad 120 place, be adapted for bonding.General, to described insulating barrier 300 removals are required for carrying out over etching, to guarantee the insulating barrier 300 on described first aluminium welding pad 110 and the second aluminium welding pad 120 All remove clean, and after described insulating barrier 300 is removed, also include utilizing HF deionized water solution to remove the first aluminium welding pad The process of 110 and second natural oxidizing layers on aluminium welding pad 120.

It follows that combine Fig. 8, with continued reference to shown in Fig. 3, perform step S20: provide the second Semiconductor substrate, described the Attachment structure, described attachment structure and described first aluminium welding pad one_to_one corresponding it is formed with in two Semiconductor substrate;

Second Semiconductor substrate 200 is provided, described second Semiconductor substrate 200 includes some attachment structures 210, described connection Structure 210 and described first aluminium welding pad 110 one_to_one corresponding.Described second Semiconductor substrate 200 also includes flat part 220.One As, described attachment structure 210 is formed by the surface etching the second Semiconductor substrate 200, and described flat part 220 is described The main part of two Semiconductor substrate 200.

It follows that continuing with Fig. 8, with reference to shown in Figure 10, perform step S30: by described first aluminium welding pad and attachment structure Connect, so that described second Semiconductor substrate is bonded with described first Semiconductor substrate;

Second Semiconductor substrate 200 and described first Semiconductor substrate 100 are by the first aluminium welding pad 110 and attachment structure 210 key It is combined so that the second Semiconductor substrate 200 is combined with the device architecture in described first Semiconductor substrate 100, Form the MEMS semiconductor device structure of 3D.

It follows that continuing with Fig. 8, with reference to shown in Fig. 9, perform step S40: cut the part of described second Semiconductor substrate Thickness, the cut place of described second Semiconductor substrate is corresponding with described second aluminium welding pad;

With reference to shown in Fig. 9, using cutter 70 to cut described second Semiconductor substrate 200, cut place is described the The region of described attachment structure 210, and the described second cut place of Semiconductor substrate 200 is not had in two Semiconductor substrate 200 Corresponding with described second aluminium welding pad 120, as shown in dotted line 1,2 in Figure 10.

In this step, the described cutting to the second Semiconductor substrate 200 is not cut off the second Semiconductor substrate, retains the second half The thickness d at the cut place of conductor substrate 200 is 20 μm~30 μm.

In this step, owing to the second Semiconductor substrate 200 is not cut off, produce when cutting the second Semiconductor substrate 200 Particle 60 less fall on the second aluminium welding pad 120.

It follows that continuing with Fig. 8, with continued reference to shown in Fig. 9, perform step S50: utilize deionized water to described second aluminium Weld pad is carried out;

In this step, deionized water is utilized to clean the particle 60 produced when eliminating cutting the second Semiconductor substrate 200, anti- Only these particles 60 are in subsequent technique, adsorbed by the second aluminium welding pad 120.And due to the particle 60 on the second aluminium welding pad 120 Fewer, the most easily washed by deionized water, it is not necessary to the impulsive force of the biggest deionized water, it is therefore prevented that component graphics Rushed paste by deionized water to fall.

It follows that continuing with Fig. 8, with reference to shown in Figure 10, perform step S60: utilize dry etching etching described the second half The cut place of conductor substrate so that described second semiconductor ruptures from cut;

Owing to described second Semiconductor substrate 200 place of being cut only remains 20 μm~the thickness d of 30 μm, and the second semiconductor The other parts of substrate 200 are the thickest, thus make the second semiconductor 200 can rupture from cut in this step, Expose described second aluminium welding pad 120.

It follows that continuing with Fig. 8, with reference to shown in Figure 11, perform step S70: to described first Semiconductor substrate and second Semiconductor is carried out.

In the present embodiment, use rotary washer platform to carry out described first Semiconductor substrate and the second Semiconductor substrate and clean, To get rid of the second Semiconductor substrate got off.It addition, this step also includes utilize YEScan to detect described cleaning thoroughly Step.If not cleaning thoroughly, then continue to clean.

In sum, the present invention passes through when cutting the second Semiconductor substrate, the second Semiconductor substrate of member-retaining portion thickness, so Rear being first carried out, recycling dry etching makes the second Semiconductor substrate rupture from cut, finally washes the second half and leads The part that body substrate cracking gets off, thus when ensureing to cut the second Semiconductor substrate produce particle will not or few dropping On second aluminium welding pad, it is to avoid the problem that is difficult to remove the particle on the second aluminium welding pad.So, the present invention effectively overcomes existing Various shortcoming in technology and have high industrial utilization.

The principle of above-described embodiment only illustrative present invention and effect thereof, not for limiting the present invention.Any it is familiar with this skill Above-described embodiment all can be modified under the spirit and the scope of the present invention or change by the personage of art.Therefore, such as All that in art, tool usually intellectual is completed under without departing from disclosed spirit and technological thought etc. Effect is modified or changes, and must be contained by the claim of the present invention.

Claims (10)

1. the forming method of a MEMS semiconductor devices, it is characterised in that the forming method of described MEMS semiconductor devices is extremely Include less:
First Semiconductor substrate is provided, described first Semiconductor substrate is formed the first aluminium welding pad and the second aluminium welding pad;
Second Semiconductor substrate is provided, described second Semiconductor substrate is formed attachment structure, described attachment structure and institute State the first aluminium welding pad one_to_one corresponding;
Described first aluminium welding pad and attachment structure are connected, so that described second Semiconductor substrate and described first semiconductor lining The end, is bonded;
Cut the segment thickness of described second Semiconductor substrate, the cut place of described second Semiconductor substrate and described second aluminium weldering Pad correspondence;
Utilize deionized water that described second aluminium welding pad is carried out;
Dry etching is utilized to etch the cut place of described second Semiconductor substrate so that described second semiconductor is disconnected from cut Split, expose described second aluminium welding pad;
Described first Semiconductor substrate and the second semiconductor are carried out.
The forming method of MEMS semiconductor devices the most according to claim 1, it is characterised in that: described first semiconductor lining Basal surface is formed with insulating barrier, before described second Semiconductor substrate is bonded in described first Semiconductor substrate, also includes First Semiconductor substrate is performed etching, to expose the step of described first aluminium welding pad.
The forming method of MEMS semiconductor devices the most according to claim 2, it is characterised in that: to expose described After the step of one aluminium welding pad, before the step described first aluminium welding pad and attachment structure connected, also include utilizing HF Deionized water solution removes the step of the natural oxide film on described first aluminium welding pad and the second aluminium welding pad.
The forming method of MEMS semiconductor devices the most according to claim 1, it is characterised in that: removing described second aluminium After oxide-film on weld pad, also include carrying out described second aluminium welding pad with metal wire being bonded or by described second aluminium welding pad with The step that test probe connects.
The forming method of MEMS semiconductor devices the most according to claim 1, it is characterised in that: described second aluminium welding pad bag Include the adhering and sealing ring around described second aluminium welding pad periphery and be positioned at the test contact area at described second aluminium welding pad center, institute State test contact area less than described adhering and sealing ring.
The forming method of MEMS semiconductor devices the most according to claim 1, it is characterised in that: described second semiconductor lining The end, includes flat part and the protuberance being connected with described flat part, and described attachment structure is described protuberance.
The forming method of MEMS semiconductor devices the most according to claim 1, it is characterised in that: described cutting described second In the step of the segment thickness of Semiconductor substrate, the thickness retaining the second Semiconductor substrate is 20 μm~30 μm.
The forming method of MEMS semiconductor devices the most according to claim 1, it is characterised in that: use rotary washer Platform carries out the step cleaning described first Semiconductor substrate and the second Semiconductor substrate.
The forming method of MEMS semiconductor devices the most according to claim 8, it is characterised in that: use rotary washer The step that platform carries out cleaning described first Semiconductor substrate and the second semiconductor also includes: detect what whether described cleaning completed Step.
The forming method of MEMS semiconductor devices the most according to claim 1, it is characterised in that: described the first half lead Body substrate is formed with device layer.
CN201410105998.1A 2014-03-20 2014-03-20 The forming method of MEMS semiconductor devices CN104925742B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201410105998.1A CN104925742B (en) 2014-03-20 2014-03-20 The forming method of MEMS semiconductor devices

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201410105998.1A CN104925742B (en) 2014-03-20 2014-03-20 The forming method of MEMS semiconductor devices

Publications (2)

Publication Number Publication Date
CN104925742A CN104925742A (en) 2015-09-23
CN104925742B true CN104925742B (en) 2016-09-07

Family

ID=54113218

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201410105998.1A CN104925742B (en) 2014-03-20 2014-03-20 The forming method of MEMS semiconductor devices

Country Status (1)

Country Link
CN (1) CN104925742B (en)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1650420A (en) * 2002-07-12 2005-08-03 赋权新加坡私人有限公司 Method and wafer for maintaining ultra clean bonding pads on a wafer
CN102569036A (en) * 2012-03-09 2012-07-11 常州银河半导体有限公司 Silicon wafer cleaning technology
CN103633201A (en) * 2012-08-29 2014-03-12 晶翰光电材料股份有限公司 Regeneration method of graphical sapphire substrate

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6514846B2 (en) * 2000-12-08 2003-02-04 Tao-Kuang Chang Method of fabricating soldering balls for semiconductor encapsulation
JP2003273043A (en) * 2002-03-19 2003-09-26 Iwate Toshiba Electronics Co Ltd Method of manufacturing semiconductor device
JP2005051007A (en) * 2003-07-28 2005-02-24 Tokyo Electron Ltd Manufacturing method of semiconductor chip
US8735260B2 (en) * 2010-12-13 2014-05-27 Taiwan Semiconductor Manufacturing Company, Ltd. Method to prevent metal pad damage in wafer level package

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1650420A (en) * 2002-07-12 2005-08-03 赋权新加坡私人有限公司 Method and wafer for maintaining ultra clean bonding pads on a wafer
CN102569036A (en) * 2012-03-09 2012-07-11 常州银河半导体有限公司 Silicon wafer cleaning technology
CN103633201A (en) * 2012-08-29 2014-03-12 晶翰光电材料股份有限公司 Regeneration method of graphical sapphire substrate

Also Published As

Publication number Publication date
CN104925742A (en) 2015-09-23

Similar Documents

Publication Publication Date Title
JP5779652B2 (en) Semiconductor chip with reinforced through silicon vias
TWI529119B (en) Structure and method for motion sensor
CN107256849B (en) The manufacturing method of semiconductor device and semiconductor device
US10262911B1 (en) Circuit for and method of testing bond connections between a first die and a second die
US20190341319A1 (en) Packaging Mechanisms for Dies with Different Sizes of Connectors
US10043723B2 (en) Method of forming a temporary test structure for device fabrication
KR101355724B1 (en) Interposer test structures and methods
TWI405321B (en) 3d multi-wafer stacked semiconductor structure and method for manufacturing the same
JP4544876B2 (en) Manufacturing method of semiconductor device
TWI389223B (en) Semiconcductor packages and manufacturing method thereof
TWI497615B (en) Structures for protecting t-contacts in chip scale packages and method of production thereof
EP1609179B1 (en) Internally reinforced bond pads
US8110900B2 (en) Manufacturing process of semiconductor device and semiconductor device
KR20120067941A (en) Integration of shallow trench isolation and through-substrate vias into integrated circuit designs
JP2010206007A (en) Semiconductor device and method of manufacturing the same
KR20070005605A (en) Probe and probe manufacturing method
EP2648215A3 (en) Method and apparatus providing integrated circuit system with interconnected stacked device wafers
CN102815659A (en) Semiconductor Devices With Moving Members and Methods for Making the Same
US7446029B2 (en) Semiconductor element and manufacturing method thereof
JP2008258258A (en) Semiconductor device
US20120298410A1 (en) Interposer Testing Using Dummy Connections
TWI545715B (en) Three-dimensional integrated circuits (3dics) package
KR20190140967A (en) Treated Stacking Dies
Ohara et al. 10 µm fine pitch Cu/Sn micro-bumps for 3-D super-chip stack
WO2007137049A3 (en) Double-sided integrated circuit chips

Legal Events

Date Code Title Description
PB01 Publication
C06 Publication
SE01 Entry into force of request for substantive examination
C10 Entry into substantive examination
GR01 Patent grant
C14 Grant of patent or utility model