CN102856431A - Method for treating residual glue of solar cell fragments - Google Patents
Method for treating residual glue of solar cell fragments Download PDFInfo
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- CN102856431A CN102856431A CN2012102841498A CN201210284149A CN102856431A CN 102856431 A CN102856431 A CN 102856431A CN 2012102841498 A CN2012102841498 A CN 2012102841498A CN 201210284149 A CN201210284149 A CN 201210284149A CN 102856431 A CN102856431 A CN 102856431A
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- concentration
- soaking
- solar cell
- fragments
- sulfuric acid
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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Abstract
The invention discloses a method for treating residual glue of solar cell fragments, relating to the solar washing technology. The method comprises the steps of: a. washing the surfaces of fragments clean; b. placing 30kg fragments in each soaking tank; c. evenly mixing and agitating manganese dioxide and potassium chlorate according to a proportion of 1:1=2000g:2000g, wherein the manganese dioxide is an analytical reagent with the concentration of 80-85% and the potassium chlorate is an analytical reagent with the concentration of more than 99.5% ; d. according to a weight ratio of material to sulfuric acid equal to 2:3, adding sulfuric acid into the soaking tanks and evenly agitating, wherein the concentration of the sulfuric is more than or equal to 98% in industrial grade; and e. adding 2L nitric acid and evenly agitating, wherein the nitric acid is an analytical reagent with the concentration of 65-70%. The solar cell fragments are washed to be clean with pure water and aired after being subjected to agitation, soaking and reaction. The method has the beneficial effects of being low in cost, high in efficiency and good in quality by enabling glue in the fragments to be fully reacted and degraded through acid soaking, and being capable of effectively lowering the production cost of silicon ingot, increasing the feeding amount and achieving the synergistic purpose.
Description
Technical field
The present invention relates to solar energy single crystal, polysilicon chip technology manufacturing field, especially relate to solar energy and wash the material technology.
Background technology
Solar energy industry is rising industry, environmental protection is paid attention to the increasing of dynamics along with people, and solar energy industry develops rapidly especially.The silica-based cell piece of photovoltaic solar is one of green energy resource of popularizing at present, has the viscose glue link in the process of cutting silicon wafer, and having apparatus and process, human error etc. to cause in the cutting fragment the inside has adhesive tape residual.Be that artificial separation efficient is low and sorting is clean fully to the processing method of fragment the inside cull in the market, poor processing effect is thrown stove has certain influence to the silicon ingot quality.Can to make residual adhesive tape process clean efficient high-quality good by soaking with sulfuric acid, manganese dioxide, nitric acid, potassium chlorate.
Summary of the invention
The purpose of this invention is to provide a kind of cull processing method of solar cell fragment, it has overcome the defective of prior art, and processing cost is low and meet next procedure and throw the stove standard.
For achieving the above object, the present invention adopts following technical scheme:
The cull processing method of solar cell fragment is characterized in that comprising the steps:
A fractal surfaces wash clean;
B puts into the every groove 30kg of soaking compartment with fragment;
By weight be 1:1=2000g:2000g ratio mixing and stirring, the concentration of manganese dioxide is pure 80%～85% for analyzing with manganese dioxide and potassium chlorate for c, and the concentration of potassium chlorate is pure greater than 99.5% for analysis;
D is by weight being material: the ratio of sulfuric acid=2:3, and sulfuric acid joined stir in the soaking compartment, the concentration of sulfuric acid is technical grade 〉=98%;
E adds nitric acid 2L and stirs, and concentration of nitric acid is pure 65%～70% for analyzing, and stirs and totally dries with pure water rinsing after soaking reaction.
Described pure water refers to the deionization pure water, resistivity 10 megaohm mommes～18 megaohm mommes.
Described glue be the system such as resin can binding.
The beneficial effect of patent of the present invention is: be by manganese dioxide, potassium chlorate, sulfuric acid, nitric acid mixing material the glue of fragment the inside to be carried out chemical reaction Formed hydrate, totally dry qualifying with pure water rinsing and enter next process, better than artificial separation efficient high-quality with the mode of acid soak.
Embodiment
In order to make those skilled in the art person understand better the present invention program, and above-mentioned purpose of the present invention, feature and advantage can be become apparent more, the present invention is further detailed explanation below in conjunction with embodiment.
Embodiment:
The cull processing method of solar cell fragment comprises the steps:
The first step: fractal surfaces wash clean; (clean standard is that naked eyes are seen without other impurity such as surface dust)
Second step: the gaily decorated basket that the fragment adhesive tape will be housed is put into soaking compartment (every groove foam material 30kg);
The 3rd step: pour manganese dioxide and potassium chlorate into by the 1:1=2000g:2000g mixing and stirring, the concentration of manganese dioxide is pure 80%～85% for analyzing, and the concentration of potassium chlorate is pure greater than 99.5% for analysis;
The 4th step: by weight being material: the ratio of sulfuric acid=2:3, sulfuric acid joined stir in the soaking compartment, the concentration of sulfuric acid is technical grade 〉=98%;
The 5th step: add nitric acid 2L and stir concentration of nitric acid for analyzing pure 65%～70%.Totally dry with pure water rinsing after stirring the immersion reaction.
Described pure water is the deionization pure water, resistivity 10～18 megaohm mommes.
The above; be the specific embodiment of the present invention only, but protection scope of the present invention is not limited to this, anyly is familiar with those skilled in the art in the technical scope that the present invention discloses; the variation that can expect easily or replacement all should be encompassed within protection scope of the present invention.
Claims (2)
1. the cull processing method of solar cell fragment is characterized in that comprising the steps:
A fractal surfaces wash clean;
B puts into the every groove 30kg of soaking compartment with fragment;
By weight be 1:1=2000g:2000g ratio mixing and stirring, the concentration of manganese dioxide is pure 80%～85% for analyzing with manganese dioxide and potassium chlorate for c, and the concentration of potassium chlorate is pure greater than 99.5% for analysis;
D is by weight being material: the ratio of sulfuric acid=2:3, and sulfuric acid joined stir in the soaking compartment, the concentration of sulfuric acid is technical grade 〉=98%;
E adds nitric acid 2L and stirs, and concentration of nitric acid is pure 65%～70% for analyzing, and stirs and totally dries with pure water rinsing after soaking reaction.
2. the cull processing method of solar cell fragment according to claim 1, it is characterized in that: described pure water refers to the deionization pure water, resistivity is 10～18 megaohm mommes.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012102841498A CN102856431A (en) | 2012-08-12 | 2012-08-12 | Method for treating residual glue of solar cell fragments |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012102841498A CN102856431A (en) | 2012-08-12 | 2012-08-12 | Method for treating residual glue of solar cell fragments |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN102856431A true CN102856431A (en) | 2013-01-02 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2012102841498A Pending CN102856431A (en) | 2012-08-12 | 2012-08-12 | Method for treating residual glue of solar cell fragments |
Country Status (1)
| Country | Link |
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| CN (1) | CN102856431A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104616975A (en) * | 2015-01-21 | 2015-05-13 | 江西久顺科技有限公司 | Method for removing impurities in broken silicon wafer |
| CN107482086A (en) * | 2017-08-23 | 2017-12-15 | 扬州荣德新能源科技有限公司 | A kind of method for removing polysilicon surface epobond epoxyn |
| CN110610852A (en) * | 2019-09-27 | 2019-12-24 | 扬州扬杰电子科技股份有限公司 | Method for removing residual glue on metal surface |
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| CN1775799A (en) * | 2005-12-08 | 2006-05-24 | 中国科学院上海有机化学研究所 | C22 steroid compounds and their synthesizing method |
| CN101857221A (en) * | 2010-05-21 | 2010-10-13 | 哈尔滨工业大学 | Method for preparing graphene compounds and graphene oxide compounds with high efficiency |
| CN102070146A (en) * | 2010-11-26 | 2011-05-25 | 安阳市凤凰光伏科技有限公司 | Treatment method of broken materials of solar silicon cell pieces |
| CN102151669A (en) * | 2010-11-26 | 2011-08-17 | 安阳市凤凰光伏科技有限公司 | Processing method of coating film crushed materials of solar silicon cell |
| CN102267700A (en) * | 2011-08-04 | 2011-12-07 | 江西旭阳雷迪高科技股份有限公司 | Method for separating and removing organic fine impurities from crushed silicon chip |
-
2012
- 2012-08-12 CN CN2012102841498A patent/CN102856431A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1775799A (en) * | 2005-12-08 | 2006-05-24 | 中国科学院上海有机化学研究所 | C22 steroid compounds and their synthesizing method |
| CN101857221A (en) * | 2010-05-21 | 2010-10-13 | 哈尔滨工业大学 | Method for preparing graphene compounds and graphene oxide compounds with high efficiency |
| CN102070146A (en) * | 2010-11-26 | 2011-05-25 | 安阳市凤凰光伏科技有限公司 | Treatment method of broken materials of solar silicon cell pieces |
| CN102151669A (en) * | 2010-11-26 | 2011-08-17 | 安阳市凤凰光伏科技有限公司 | Processing method of coating film crushed materials of solar silicon cell |
| CN102267700A (en) * | 2011-08-04 | 2011-12-07 | 江西旭阳雷迪高科技股份有限公司 | Method for separating and removing organic fine impurities from crushed silicon chip |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104616975A (en) * | 2015-01-21 | 2015-05-13 | 江西久顺科技有限公司 | Method for removing impurities in broken silicon wafer |
| CN107482086A (en) * | 2017-08-23 | 2017-12-15 | 扬州荣德新能源科技有限公司 | A kind of method for removing polysilicon surface epobond epoxyn |
| CN110610852A (en) * | 2019-09-27 | 2019-12-24 | 扬州扬杰电子科技股份有限公司 | Method for removing residual glue on metal surface |
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Application publication date: 20130102 |