CN102267700A - Method for separating and removing organic fine impurities from crushed silicon chip - Google Patents
Method for separating and removing organic fine impurities from crushed silicon chip Download PDFInfo
- Publication number
- CN102267700A CN102267700A CN2011102226371A CN201110222637A CN102267700A CN 102267700 A CN102267700 A CN 102267700A CN 2011102226371 A CN2011102226371 A CN 2011102226371A CN 201110222637 A CN201110222637 A CN 201110222637A CN 102267700 A CN102267700 A CN 102267700A
- Authority
- CN
- China
- Prior art keywords
- silicon chip
- crushed silicon
- sulfuric acid
- nitric acid
- separating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
The invention discloses a method for separating and removing organic fine impurities from a crushed silicon chip. The method comprises the following steps of: preparing mixed liquid by using sulfuric acid and nitric acid, wherein the ratio of the sulfuric acid to the nitric acid is (7-9): (1-3); treating the crushed silicon chip; and cleaning the crushed silicon chip by using water. The method has the characteristics of high efficiency, easiness for cleaning and simplicity in operation. The method can be used for recycling the crushed silicon chip.
Description
Technical field
The present invention relates to that unlike material separates the removal method with the organic fines impurity of shape in a kind of silicon chip particle.
Background technology
Solar cell material.Solar cell on the domestic and international market is silica-based battery mostly at present; Polysilicon is the preparation polysilicon chip, the raw material of pulling monocrystal silicon; In other words, polysilicon is the basic raw material of sun power.
In solar silicon wafers processing enterprise, because the polycrystalline silicon raw material price is very expensive, 500 dollars one kilogram of Gao Shida, the per kilogram price is at 100 dollars at present.In addition, a lot of time silicon material are in short supply, have price but no buyers sometimes.So some the silicon chip particles in the cutting process and the cleaning of coming unstuck all are used to recycling.
At these silicon chip particles gib block fines and the different in size collodion silk also thinner than hairline are usually arranged; Current collodion silk is the Resins, epoxy material; Gib block also is a macromolecular material.Broken silicon wafers, collodion silk, gib block with and the organic pollutant that speckles with of surface, mix, be to adopt artificial separation in the past, a people one day can only sorting 0.3-0.5 kilogram, and because eyes are that whole day is concentrated, eyes are tired easily, produce carelessness, sorting is unclean, selects once more again, efficient is very low, and the people is very tired.
Summary of the invention
Its purpose of the present invention just is to provide that unlike material separates the removal method with the organic fines impurity of shape in a kind of silicon chip particle, has the characteristics of efficient height, easy cleaning, and simple to operate.Can be used for the recycling of silicon chip particle.
The technical scheme that realizes above-mentioned purpose and take, comprise that be made into mixing liquid with sulfuric acid and nitric acid, sulfuric acid and nitric acid ratio are (7-9): (1-3), broken silicon wafers is handled, water cleans up thereafter.
Compared with prior art, beneficial effect of the present invention is, owing to adopted sulfuric acid and nitric acid to be made into the processing method that mixing liquid cleans, thereby have characteristics of efficient height, easy cleaning, and it is simple to operate, 50-100KG capable of washing for each person every day, efficient has improved 100 times, can be used for the recycling of silicon chip particle.
Embodiment
Physical method and chemical process have been adopted in this invention.Comprise with sulfuric acid and nitric acid being made into mixing liquid that sulfuric acid and nitric acid ratio are (7-9): (1-3), broken silicon wafers is handled, water cleans up thereafter.
Utilize silicon chip, collodion silk, different proportion and some organic materialss of gib block to be dissolved in sour character, the proportion of polysilicon: 2.32; Nitric acid proportion: 1.40; Sulfuric acid proportion: 1.84; The proportion of Resins, epoxy is 1.17; The density of polyvinyl chloride is generally 1.15-1.42g/cm
3Sulfuric acid and nitric acid are made into mixing liquid, sulfuric acid and nitric acid ratio are (7-9): (1-3), broken silicon wafers is handled, according to physical principle, gib block and the collodion silk lighter than acid solution can float on the acid solution surface, the broken silicon wafers heavier than acid solution can sink, pick up the impurity of come-up again with screen cloth, even the collodion silk that has minority to be rolled in the broken silicon wafers sinks, spending about about 15 minutes also can be melted away by sulfuric acid, so not only removed collodion silk but also can conveniently remove floating gib block on the whole, water cleans up just passable thereafter.(above method is used for all a lot of broken silicon wafers of gib block collodion silk and separates).
Another kind method is that sulfuric acid and nitric acid ratio are (1-3): mix acid liquor (7-9), and to pour nitric acid earlier into and add sulfuric acid again, the limit edged stirs, and carries out broken silicon wafers according to the disposable complex acid liquid of turnout 50-80 kilogram and separates.(this method is used for the few broken silicon wafers of the many collodion silks of gib block and separates).
Adopt after above two kinds of methods, separablely for each person every day go out 50-100KG.Efficient is artificial isolating 100-200 times in the past.
Claims (1)
1. unlike material separates the removal method with the organic fines impurity of shape in the silicon chip particle, it is characterized in that, comprises, be made into mixing liquid with sulfuric acid and nitric acid, sulfuric acid and nitric acid ratio are (7-9): (1-3), broken silicon wafers is handled, water cleans up thereafter.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011102226371A CN102267700A (en) | 2011-08-04 | 2011-08-04 | Method for separating and removing organic fine impurities from crushed silicon chip |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011102226371A CN102267700A (en) | 2011-08-04 | 2011-08-04 | Method for separating and removing organic fine impurities from crushed silicon chip |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN102267700A true CN102267700A (en) | 2011-12-07 |
Family
ID=45050186
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2011102226371A Pending CN102267700A (en) | 2011-08-04 | 2011-08-04 | Method for separating and removing organic fine impurities from crushed silicon chip |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102267700A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102856431A (en) * | 2012-08-12 | 2013-01-02 | 安阳市凤凰光伏科技有限公司 | Method for treating residual glue of solar cell fragments |
| CN104616975A (en) * | 2015-01-21 | 2015-05-13 | 江西久顺科技有限公司 | Method for removing impurities in broken silicon wafer |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009196849A (en) * | 2008-02-21 | 2009-09-03 | Sharp Corp | Silicon recovery method and silicon recovery apparatus |
| CN101683981A (en) * | 2008-09-25 | 2010-03-31 | 浙江昱辉阳光能源有限公司 | Method for recycling waste silicon solution |
| CN101912809A (en) * | 2010-08-26 | 2010-12-15 | 江西旭阳雷迪高科技股份有限公司 | Method for separating semiconductor broken silicon wafers and guide bars |
| CN102060299A (en) * | 2009-11-12 | 2011-05-18 | 江西赛维Ldk太阳能高科技有限公司 | Method for separating silica powder from impurities in mixture |
-
2011
- 2011-08-04 CN CN2011102226371A patent/CN102267700A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009196849A (en) * | 2008-02-21 | 2009-09-03 | Sharp Corp | Silicon recovery method and silicon recovery apparatus |
| CN101683981A (en) * | 2008-09-25 | 2010-03-31 | 浙江昱辉阳光能源有限公司 | Method for recycling waste silicon solution |
| CN102060299A (en) * | 2009-11-12 | 2011-05-18 | 江西赛维Ldk太阳能高科技有限公司 | Method for separating silica powder from impurities in mixture |
| CN101912809A (en) * | 2010-08-26 | 2010-12-15 | 江西旭阳雷迪高科技股份有限公司 | Method for separating semiconductor broken silicon wafers and guide bars |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102856431A (en) * | 2012-08-12 | 2013-01-02 | 安阳市凤凰光伏科技有限公司 | Method for treating residual glue of solar cell fragments |
| CN104616975A (en) * | 2015-01-21 | 2015-05-13 | 江西久顺科技有限公司 | Method for removing impurities in broken silicon wafer |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US8034313B2 (en) | Recovery method of silicon slurry | |
| CN102951641B (en) | Water-saving and environmental protection-type preparation method of silicon carbide micro-powder for silicon wafer wire cutting | |
| CN102757050B (en) | Acid cleaning purification method of metallic silicon | |
| CN102167956B (en) | Method for recycling and reutilizing rare-earth polishing powder waste residue and waste liquor | |
| JP2014507529A (en) | Separation fluid, method and system for separating multilayer systems | |
| CN102071092A (en) | Method for recovering and recycling silicon slice cutting waste mortar | |
| CN104176737A (en) | Method for recovering silicon powder from cut mortar waste | |
| CN102659111B (en) | Method for recovering silicon and silicon carbide from silicon wafer cutting waste mortar | |
| CN103922343A (en) | Iron removing purification method for silicon carbide cutting edge material | |
| CN106082233A (en) | The method reclaiming silica flour from diamond wire cutting slurry | |
| CN111777070A (en) | High-valued recycling method for cutting waste materials of diamond wire silicon wafers | |
| CN102390832B (en) | Method for treating waste silicon powder produced in trichlorosilane synthesis process | |
| CN103350996B (en) | Adamantine method is reclaimed from liquid resin | |
| CN102267700A (en) | Method for separating and removing organic fine impurities from crushed silicon chip | |
| CN102266859A (en) | Method and device for cleaning cauliflower-shaped polycrystalline silicon raw material with oxides on surface thereof | |
| CN102530948B (en) | Method for recycling silicon from filings obtained through silicon wafer cutting | |
| CN102167322A (en) | Method for recovering silicon carbide in waste cutting mortar by using ammonium bifluoride | |
| CN107902659A (en) | A kind of method that recycling purification boron carbide in waste material is ground from sapphire | |
| US20110300047A1 (en) | Method for recycling silicon | |
| CN205361588U (en) | Choice process units in quartzy ore deposit | |
| CN114015892A (en) | Lead plate grid recycling method for disassembling waste batteries | |
| CN107986284A (en) | It is a kind of that the method that boron carbide is recycled in waste material is ground from sapphire | |
| CN104630471B (en) | A kind of method and its device of the removing solution of zinc sulfate magnesium ion that pressurizes | |
| CN113231434A (en) | Crystalline silicon photovoltaic module recovery method | |
| CN202201710U (en) | Recycling device for silicon nitride |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20111207 |