CN101912809A - Method for separating semiconductor broken silicon wafers and guide bars - Google Patents
Method for separating semiconductor broken silicon wafers and guide bars Download PDFInfo
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- CN101912809A CN101912809A CN2010102638146A CN201010263814A CN101912809A CN 101912809 A CN101912809 A CN 101912809A CN 2010102638146 A CN2010102638146 A CN 2010102638146A CN 201010263814 A CN201010263814 A CN 201010263814A CN 101912809 A CN101912809 A CN 101912809A
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- silicon wafers
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- gib block
- guide bars
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Abstract
The invention relates to a method for separating semiconductor broken silicon wafers and guide bars, in particular to a method for separating the broken silicon wafers and the guide bars generated in the solar-grade polycrystalline silicon wafer manufacture process. The separating method comprises the following steps of: placing the broken silicon wafers mixed with the guide bars in prepared aqueous solution; after the guide bars float up and the guide bars floating on the surface of the aqueous solution are fished out by a plastic sieve, taking out the broken silicon wafers and flushing with pure water, wherein the compound of the aqueous solution can be any one of 45-80% nitric acid, 20-50% aluminum chloride solution, 30-85% zinc chloride solution, 30-85% stannic chloride, 30-86% ferric chloride solution and 30-83% antimony butter solution; after the broken silicon wafers are taken out and flushed with the pure water, placing the broken silicon wafers in 98% concentrated sulfuric acid for soaking for 3-15min and then taking out. The surfaces of the broken silicon wafers separated by the method are clean, and the guide bars in the broken silicon wafers can be completely removed; the method has low separation cost, low operation difficulty and high efficiency, and moreover, the aluminum chloride solution and the stannic chloride solution can be repeatedly used; and relative to manual separation, a large number of manpower resources can be saved.
Description
Affiliated technical field
The invention belongs to semi-conducting material sorting field, specifically, relate to the method for a kind of separating semiconductor broken silicon wafers and gib block.
Background technology
Silicon is a kind of important semi-conducting material, can be widely used in components and parts such as diode, triode, luminescent device, pressure cell, solar cell.But silicon is as a kind of non-renewable resources, and its memory space is limited, and primary polysilicon costs an arm and a leg, and therefore the recovery silicon material that makes full use of in the production process seems very important.
In solar-grade polysilicon sheet manufacture process, need use gib block during the silicon rod section, be used to be bonded at the one side of silicon rod, carry out gauze is cut.The guiding silver of formation and silicon chip condition of equivalent thickness mixes with broken silicon wafers after cutting finishes, and actual production at present all is to use artificial separation, and production efficiency is very low.
Summary of the invention
Purpose of the present invention is exactly to overcome above defective and method that a kind of separating semiconductor broken silicon wafers and gib block are provided, be separated in broken silicon wafers and the gib block that produces in the solar-grade polysilicon sheet manufacture process with solution, enhancing productivity, save production cost.
The objective of the invention is to be achieved through the following technical solutions:
The method of a kind of separating semiconductor broken silicon wafers and gib block may further comprise the steps:
(1) preparation compound water solution, compound water solution be mass percent be 45%～80% nitric acid, 20%～50% aluminum trichloride solution, 30%～85% liquor zinci chloridi, 30%～85% tin chloride solution, 30%～86% liquor ferri trichloridi, 30%～83% trichloride antimony solution wherein any; Stir; Wherein aluminum trichloride solution and liquor zinci chloridi temperature are 60 ℃～100 ℃, and other solution temperature is a room temperature;
(2) broken silicon wafers that will be mixed with gib block places the aqueous solution;
(3) with sieve the gib block that swims in aqueous solution surface is picked up after, take out broken silicon wafers;
(4) use pure water rinsing, promptly obtain final products.
Be preferably: take out broken silicon wafers with pure water rinsing after, can place the concentrated sulfuric acid to soak again 3～15 minutes, employed sulfuric acid mass percent is 98%.
The density of gib block is 1.0g/cm
3～1.35g/cm
3, material is a carbohydrate.
Used sieve is the plastics sieve of anti-strong acid, and sieve mesh is 8～20 orders.
The present invention compared with prior art, its advantage is, the broken silicon wafers after the present invention separates has been removed gib block fully, with respect to artificial separation, has increased substantially separative efficiency; And aluminum trichloride solution and butter of tin solution and recycling significantly reduce separation costs.
The specific embodiment
The present invention can specifically implement by the technical scheme that illustrates in the summary of the invention, and the invention will be further described below in conjunction with embodiment:
Embodiment 1:
Prepare 90 ℃ of mass percents and be the aqueous solution 20400g of 39.2% aluminium chloride, stir; The broken silicon wafers that gib block is arranged is poured in the above-mentioned aluminum chloride aqueous solution, treat that gib block floats after, with sieve gib block is pulled out.Take out broken silicon wafers at last, use pure water rinsing, promptly obtain final products.
Embodiment 2:
Prepare 60 ℃ of mass percents and be the aqueous solution 22800g of 45.1% aluminium chloride, stir; The broken silicon wafers that gib block is arranged is poured in the above-mentioned aluminum chloride aqueous solution, treat that gib block floats after, with sieve gib block is pulled out, take out broken silicon wafers; Place above-mentioned broken silicon wafers 98% sulfuric acid to soak 10 minutes, take out broken silicon wafers, use pure water rinsing, promptly obtain final products.
Embodiment 3:
At room temperature prepare mass percent and be 70% butter of tin solution 20200g, stir; The broken silicon wafers that gib block is arranged is poured in the above-mentioned butter of tin solution, treat that broken silicon wafers sinks to container bottom after, with sieve gib block is pulled out.Take out broken silicon wafers at last, use pure water rinsing, promptly obtain final products.
Embodiment 4:
Is the 25kg mass percent that 69% nitric acid is poured in the plastic containers, adds the broken silicon wafers that is mixed with gib block, treat that gib block floats after, gib block is pulled out the taking-up broken silicon wafers with sieve; After placing 98% sulfuric acid to soak 10 minutes, take out broken silicon wafers to above-mentioned broken silicon wafers, use pure water rinsing, promptly obtain final products.
Embodiment 5:
Prepare 70 ℃ of mass percents and be the aqueous solution 36343g of 73.78% zinc chloride, stir; The broken silicon wafers that gib block is arranged is poured in the above-mentioned solder(ing)acid, treat that gib block floats after, with sieve gib block is pulled out, take out broken silicon wafers, use pure water rinsing, promptly obtain final products.
Embodiment 6:
Prepare 96 ℃ of mass percents and be the aqueous solution 22463g of 57.59% zinc chloride, stir; The broken silicon wafers that gib block is arranged is poured in the above-mentioned solder(ing)acid, treat that gib block floats after, with sieve gib block is pulled out, take out broken silicon wafers, use pure water rinsing, promptly obtain final products.
Embodiment 7:
The preparation mass percent is the aqueous solution 14914g of 75% ferric trichloride under the room temperature, stirs; The broken silicon wafers that gib block is arranged is poured in the above-mentioned ferric chloride aqueous solutions, treat that gib block floats after, with sieve gib block is pulled out, take out broken silicon wafers, use pure water rinsing, promptly obtain final products.
Embodiment 8:
The preparation mass percent is the aqueous solution 12005g of 68% trichloride antimony under the room temperature, stirs; The broken silicon wafers that gib block is arranged is poured in the above-mentioned trichloride antimony aqueous solution, treat that gib block floats after, with sieve gib block is pulled out, take out broken silicon wafers, use pure water rinsing, promptly obtain final products.
The explanation of above embodiment just is used for helping to understand technical scheme of the present invention; Simultaneously, for one of ordinary skill in the art, according to technical scheme of the present invention, the part that in the specific embodiment and application, all can change, in sum, above embodiment content should not be construed as limitation of the present invention.
Claims (4)
1. the method for separating semiconductor broken silicon wafers and gib block is characterized in that may further comprise the steps:
(1) preparation compound water solution, compound water solution be mass percent be 45%～80% nitric acid, 20%～50% aluminum trichloride solution, 30%～85% liquor zinci chloridi, 30%～85% tin chloride solution, 30%～86% liquor ferri trichloridi, 30%～83% trichloride antimony solution wherein any; Wherein aluminum trichloride solution and liquor zinci chloridi temperature are 60 ℃～100 ℃, and other solution temperature is a room temperature;
(2) broken silicon wafers that will be mixed with gib block places the aqueous solution;
(3) with sieve the gib block that swims in aqueous solution surface is picked up after, take out broken silicon wafers;
(4) use pure water rinsing, promptly obtain final products.
2. the method for a kind of separating semiconductor broken silicon wafers according to claim 1 and gib block is characterized in that: take out broken silicon wafers with pure water rinsing after, place the concentrated sulfuric acid to soak again 3～15 minutes, employed sulfuric acid mass percent is 98%.
3. the method for a kind of separating semiconductor broken silicon wafers according to claim 1 and gib block is characterized in that: the density of gib block is 1.0g/cm
3～1.35g/cm
3, material is a carbohydrate.
4. the method for a kind of separating semiconductor broken silicon wafers according to claim 1 and gib block is characterized in that: used sieve is the plastics sieve of anti-strong acid, and sieve mesh is 8～20 orders.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010102638146A CN101912809A (en) | 2010-08-26 | 2010-08-26 | Method for separating semiconductor broken silicon wafers and guide bars |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010102638146A CN101912809A (en) | 2010-08-26 | 2010-08-26 | Method for separating semiconductor broken silicon wafers and guide bars |
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| CN101912809A true CN101912809A (en) | 2010-12-15 |
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| CN2010102638146A Pending CN101912809A (en) | 2010-08-26 | 2010-08-26 | Method for separating semiconductor broken silicon wafers and guide bars |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102267700A (en) * | 2011-08-04 | 2011-12-07 | 江西旭阳雷迪高科技股份有限公司 | Method for separating and removing organic fine impurities from crushed silicon chip |
| CN102814297A (en) * | 2012-08-13 | 2012-12-12 | 安阳市凤凰光伏科技有限公司 | Cleaning solution for separating silicon material in manner of sedimentation and preparation and application method of cleaning solution |
| CN102814226A (en) * | 2012-08-13 | 2012-12-12 | 安阳市凤凰光伏科技有限公司 | Cleaning solution for separating silicon material in manner of floatation and preparation and application method of cleaning solution |
| CN106824499A (en) * | 2017-02-07 | 2017-06-13 | 扬州荣德新能源科技有限公司 | The method of resin filler strip in removal silicon material |
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| US4054442A (en) * | 1976-02-23 | 1977-10-18 | Union Carbide Corporation | Method for recovering scheelite from tungsten ores by flotation |
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| CN201212068Y (en) * | 2008-05-16 | 2009-03-25 | 江西赛维Ldk太阳能高科技有限公司 | Silicon block with guide bar |
| CN101428252A (en) * | 2008-12-16 | 2009-05-13 | 江西赛维Ldk太阳能高科技有限公司 | Classification method for waste silicon material mixed with foreign matter |
| CN101664970A (en) * | 2009-09-03 | 2010-03-10 | 无锡尚品太阳能电力科技有限公司 | Monocrystal silicon-rod butting technique |
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- 2010-08-26 CN CN2010102638146A patent/CN101912809A/en active Pending
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| US4054442A (en) * | 1976-02-23 | 1977-10-18 | Union Carbide Corporation | Method for recovering scheelite from tungsten ores by flotation |
| CN1608035A (en) * | 2001-11-22 | 2005-04-20 | 地中海自然环境公司 | Method and device for treating hydrophilic sludge by hydraulic turbulence effect combined with oxidation and chemical reactions by additive input |
| CN101032806A (en) * | 2006-03-06 | 2007-09-12 | 张捷平 | Method of recycling cutting suspension |
| CN201212068Y (en) * | 2008-05-16 | 2009-03-25 | 江西赛维Ldk太阳能高科技有限公司 | Silicon block with guide bar |
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| 中国药学大辞典编委会: "《中国药学大辞典》", 30 June 2010, article "《氯》" * |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102267700A (en) * | 2011-08-04 | 2011-12-07 | 江西旭阳雷迪高科技股份有限公司 | Method for separating and removing organic fine impurities from crushed silicon chip |
| CN102814297A (en) * | 2012-08-13 | 2012-12-12 | 安阳市凤凰光伏科技有限公司 | Cleaning solution for separating silicon material in manner of sedimentation and preparation and application method of cleaning solution |
| CN102814226A (en) * | 2012-08-13 | 2012-12-12 | 安阳市凤凰光伏科技有限公司 | Cleaning solution for separating silicon material in manner of floatation and preparation and application method of cleaning solution |
| CN106824499A (en) * | 2017-02-07 | 2017-06-13 | 扬州荣德新能源科技有限公司 | The method of resin filler strip in removal silicon material |
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Application publication date: 20101215 |