CN201212068Y - Silicon block with guide strips - Google Patents
Silicon block with guide strips Download PDFInfo
- Publication number
- CN201212068Y CN201212068Y CNU2008201129202U CN200820112920U CN201212068Y CN 201212068 Y CN201212068 Y CN 201212068Y CN U2008201129202 U CNU2008201129202 U CN U2008201129202U CN 200820112920 U CN200820112920 U CN 200820112920U CN 201212068 Y CN201212068 Y CN 201212068Y
- Authority
- CN
- China
- Prior art keywords
- gib block
- silico briquette
- silicon block
- guide strip
- silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title abstract description 17
- 229910052710 silicon Inorganic materials 0.000 title abstract description 17
- 239000010703 silicon Substances 0.000 title abstract description 17
- 239000000463 material Substances 0.000 claims abstract description 13
- 239000004033 plastic Substances 0.000 claims abstract description 13
- 229920003023 plastic Polymers 0.000 claims abstract description 13
- 229920003229 poly(methyl methacrylate) Polymers 0.000 claims abstract description 7
- 239000004926 polymethyl methacrylate Substances 0.000 claims abstract description 7
- 239000004696 Poly ether ether ketone Substances 0.000 claims abstract description 5
- JUPQTSLXMOCDHR-UHFFFAOYSA-N benzene-1,4-diol;bis(4-fluorophenyl)methanone Chemical compound OC1=CC=C(O)C=C1.C1=CC(F)=CC=C1C(=O)C1=CC=C(F)C=C1 JUPQTSLXMOCDHR-UHFFFAOYSA-N 0.000 claims abstract description 5
- 229920002530 polyetherether ketone Polymers 0.000 claims abstract description 5
- 239000004484 Briquette Substances 0.000 claims description 48
- 238000000126 in silico method Methods 0.000 claims description 3
- 230000002950 deficient Effects 0.000 abstract description 6
- 239000004721 Polyphenylene oxide Substances 0.000 abstract 1
- 239000004734 Polyphenylene sulfide Substances 0.000 abstract 1
- 239000004793 Polystyrene Substances 0.000 abstract 1
- 239000005020 polyethylene terephthalate Substances 0.000 abstract 1
- 239000004800 polyvinyl chloride Substances 0.000 abstract 1
- 101100008046 Caenorhabditis elegans cut-2 gene Proteins 0.000 description 5
- 230000007423 decrease Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
Images
Landscapes
- Processing And Handling Of Plastics And Other Materials For Molding In General (AREA)
Abstract
The utility model relates to a silicon block, in particular to a silicon block with a guide strip. A silicon block with guide strips, wherein: comprises a silicon block and a guide strip, wherein the guide strip is adhered to the surface of the silicon block facing to the cutting line. The two ends of the guide strip are flush with the two ends of the silicon block. The width/height dimension of the cross section of the guide strip perpendicular to the silicon block is as follows: 6-40 mm: 1-5 mm. The material of the guide strip is any one of PPS, PMMA, PEEK, PET, PVC, PPO and PS plastics. The utility model has the advantages that: the setting of gib block can make the cutting of silicon piece more even, reduces thin silicon chip because of the defective rate that the thickness is inhomogeneous causes.
Description
Technical field
The utility model relates to a kind of silico briquette, particularly a kind of silico briquette that has gib block.
Background technology
At present silico briquette is when being cut line and cutting into the thin silicon sheet, pycnomorphous line of cut is parallel to a cross section of a face being cut silico briquette, because the hardness of silico briquette material is very high, line of cut skids easily and causes the silicon wafer thickness that cuts out inhomogeneous, certain variation takes place in the silicon chip integral thickness, influences the quality of silicon chip.
The utility model content
The purpose of this utility model is to provide a kind of energy to make and cuts the silico briquette that has gib block more even, that be not easy to skid.
The technical solution of the utility model is:
The silico briquette that has gib block, wherein: comprise silico briquette and gib block, gib block is bonded in silico briquette on the face of line of cut.
The silico briquette that has gib block, wherein: the two ends of gib block are concordant with the two ends of silico briquette.
The silico briquette that has gib block, wherein: gib block and the vertical cross section of silico briquette wide: high size is: the 6-40 millimeter: the 1-5 millimeter.
The silico briquette that has gib block, wherein: the material of gib block is any one in PPS, PMMA, PEEK, PVC, PET, PPO, the PS plastics.
The silico briquette that the utility model relates to can be an orthogonal, also can be clavate.
Advantage of the present utility model is: the setting of gib block can reduce thin silicon chip because of the fraction defective that causes in uneven thickness so that the silico briquette cutting is more even.
Description of drawings
Accompanying drawing 1 is a user mode synoptic diagram of the present utility model.
Accompanying drawing 2 is structural representations of the present utility model.
Reference numeral: gib block 1, line of cut 2, silico briquette 3, end liner 4, pallet 5.
Embodiment
Embodiment 2, have the silico briquette of gib block, wherein: the two ends of gib block 1 are concordant with silico briquette 3 two ends.All the other are with embodiment 1.
Embodiment 4, have the silico briquette of gib block, wherein: gib block 1 is wide with silico briquette 3 vertical cross sections: high size is: 40 millimeters: 5 millimeters.All the other are with embodiment 1.
Embodiment 5, have the silico briquette of gib block, wherein: gib block 1 is wide with silico briquette 3 vertical cross sections: high size is: 20 millimeters: 3 millimeters.All the other are with embodiment 1.
Embodiment 6, have the silico briquette of gib block, wherein: the material of gib block 1 is plastics.All the other are with embodiment 1.
Embodiment 7, have the silico briquette of gib block, wherein: the material of gib block 1 is any one in PPS, PMMA, PEEK, PVC, PET, PPO, the PS plastics.All the other are with embodiment 1.
Embodiment 8, have the silico briquette of gib block, wherein: the material of gib block 1 is the PPS plastics.All the other are with embodiment 1.
Embodiment 9, have the silico briquette of gib block, wherein: the material of gib block 1 is the PMMA plastics.All the other are with embodiment 1.
Embodiment 10, have the silico briquette of gib block, wherein: the material of gib block 1 is PEEK, plastics.All the other are with embodiment 1.
Embodiment 11, have the silico briquette of gib block, wherein: the material of gib block 1 is the PVC plastics.All the other are with embodiment 1.
Embodiment 12, have the silico briquette of gib block, wherein: the material of gib block 1 is the PET plastics.All the other are with embodiment 1.
Embodiment 13, have the silico briquette of gib block, wherein: the material of gib block 1 is the PPO plastics.All the other are with embodiment 1.
Embodiment 14, have the silico briquette of gib block, wherein: the material of gib block 1 is the PS plastics.All the other are with embodiment 1.
Interpretation work principle in conjunction with the embodiments: the silico briquette that has gib block is when being cut, silico briquette 3 by glue bond on end liner 4, end liner 4 is fixed on the pallet 5, when external force drive pallet 5 is done relative movement with line of cut 2, line of cut 2 at first touches gib block 1, gib block 1 can guide in the line of cut 2 incision silico briquettes 3, and the stability of edge of a knife fluctuation has reached and cut purpose stably when having guaranteed to go into cutter.Use gib block 1 back to make because the fraction defective that silicon chip integral thickness difference causes than the decline to some extent of not using gib block 1.
The utility model differs the silicon chip thickness and is considered as bad product more than 30 microns with the narrowest place.
Experiment effect:
The PMMA gib block can reduce fraction defective and be not less than 2%.
PPS, PVC, PEEK, PET, PPO, PS plastics can reduce fraction defective 1.2%.
PMMA gib block cross section wide: high size is: the 6-40 millimeter: the 1-5 millimeter can reduce fraction defective 2.2%-2.8%.
Claims (4)
1, have the silico briquette of gib block, it is characterized in that: comprise silico briquette (3) and gib block (1), gib block (1) is bonded in silico briquette (3) on the face of line of cut (2).
2, the silico briquette that has gib block according to claim 1 is characterized in that: the two ends of gib block (1) are concordant with silico briquette (3) two ends.
3, the silico briquette that has gib block according to claim 1 is characterized in that: gib block (1) is wide with the vertical cross section of silico briquette (3): high size is: the 6-40 millimeter: the 1-5 millimeter.
4, the silico briquette that has gib block according to claim 1 is characterized in that: the material of gib block (1) is any one in PPS, PMMA, PEEK, PET, PVC, PPO, the PS plastics.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNU2008201129202U CN201212068Y (en) | 2008-05-16 | 2008-05-16 | Silicon block with guide strips |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNU2008201129202U CN201212068Y (en) | 2008-05-16 | 2008-05-16 | Silicon block with guide strips |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN201212068Y true CN201212068Y (en) | 2009-03-25 |
Family
ID=40496233
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNU2008201129202U Expired - Lifetime CN201212068Y (en) | 2008-05-16 | 2008-05-16 | Silicon block with guide strips |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN201212068Y (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101912809A (en) * | 2010-08-26 | 2010-12-15 | 江西旭阳雷迪高科技股份有限公司 | Method for separating semiconductor broken silicon wafers and guide bars |
| CN102555085A (en) * | 2010-12-15 | 2012-07-11 | 有研半导体材料股份有限公司 | Method for preventing nonuniform thickness of wire cutter inlet and guide bar therefor |
-
2008
- 2008-05-16 CN CNU2008201129202U patent/CN201212068Y/en not_active Expired - Lifetime
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101912809A (en) * | 2010-08-26 | 2010-12-15 | 江西旭阳雷迪高科技股份有限公司 | Method for separating semiconductor broken silicon wafers and guide bars |
| CN102555085A (en) * | 2010-12-15 | 2012-07-11 | 有研半导体材料股份有限公司 | Method for preventing nonuniform thickness of wire cutter inlet and guide bar therefor |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CX01 | Expiry of patent term | ||
| CX01 | Expiry of patent term |
Granted publication date: 20090325 |