CN104616975A - Method for removing impurities in broken silicon wafer - Google Patents
Method for removing impurities in broken silicon wafer Download PDFInfo
- Publication number
- CN104616975A CN104616975A CN201510043377.XA CN201510043377A CN104616975A CN 104616975 A CN104616975 A CN 104616975A CN 201510043377 A CN201510043377 A CN 201510043377A CN 104616975 A CN104616975 A CN 104616975A
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- Prior art keywords
- silicon wafers
- broken silicon
- soak
- floating
- broken
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02079—Cleaning for reclaiming
Abstract
The invention relates to the technical field of silicon material processing and in particular to a method for removing impurities in broken silicon wafer. The method comprises the following steps: preparing a soaking solution, soaking and drifting. According to the method for removing impurities in broken silicon wafer disclosed by the invention, the broken silicon wafer is upwards floated through soaking, and drifting and cleaning are performed, so that the broken materials are free of impurities of sundries, metals, stones, fibers and the like, the impurities are removed by one step, the cleaning period is short, the working efficiency is improved, and the production cost is lowered.
Description
Technical field
The present invention relates to silicon material processing technique field, be specifically related to a kind of method removing impurity in broken silicon wafers.
Background technology
Along with the development of large scale integrated circuit and photovoltaic industry, improving constantly of integrated level, more and more higher to the demand of silicon raw material, simultaneously also more and more higher to the quality requirement of silicon chip, in process of production, frequent needs process and recycle broken silicon material, because having the foreign material such as more stone, metal, fiber in broken silicon wafers raw material, it is also proposed more and more higher requirement to the elimination effect of impurity; Existing broken silicon wafers cleaning method mainly contains physical cleaning and chemical cleaning, physical cleaning is mainly used in the particle contaminant removing broken silicon wafers surface, mechanical scrub or the physical method such as ultrasonic cleaning, million sound cleanings can be taked to remove, except the mechanical scrub that effect is the poorest, all the other physical cleaning methods are higher to equipment requirement, and cost difficulty controls; Chemical cleaning is then adopt chemical to carry out wet-cleaned to broken silicon wafers, and most typical chemical cleaning technology is RCA cleaning, and adopting chemical cleaning also to have can not the multiple foreign material of disposable removing, the problem such as the cleaning frequency is long, operation is many, efficiency is low.
Summary of the invention
Object of the present invention aims to provide a kind of method removing impurity in broken silicon wafers, can the multiple foreign material of disposable removing, improves work efficiency, saves production cost.
For achieving the above object, a kind of method removing impurity in broken silicon wafers of the present invention, comprises the following steps: preparation soak → immersion → drift,
1) soak is prepared: get 55% concentration hydrogen fluoric acid 0.9-1.1, pure water 9.5-10.5,30% concentration of hydrogen peroxide solution 0.4-0.6, be placed in fermentation vat, now with the current; 2) soak: broken silicon wafers is placed in the step 1 in fermentation vat) soak prepared, stir and soak 6-8 hour after removing floating foreign material, broken silicon wafers floating, obtains broken silicon wafers floating thing; 3) drifting about: by step 2) the broken silicon wafers floating thing that obtains proceeds in potcher and drifts about with pure water, drift about after terminating and to obtain broken silicon wafers cleaning material through drying.
A kind of method removing impurity in broken silicon wafers of the present invention compared with prior art has following excellent effect.
Adopting the method for impurity in removing broken silicon wafers of the present invention, by soaking, broken silicon wafers being floated, clean through drifting about again, can make the impurity such as no-sundries, metal, stone, fiber in the fragment material obtained, the multiple foreign material of disposable removing, the cleaning frequency is short, improve work efficiency, reduce production cost.
Embodiment
A kind ofly remove the method for impurity in broken silicon wafers to of the present invention and be described in further detail below.
A kind of method removing impurity in broken silicon wafers of the present invention, comprises the following steps: preparation soak → immersion → drift,
1) soak is prepared: get 55% concentration hydrogen fluoric acid 0.9-1.1, pure water 9.5-10.5,30% concentration of hydrogen peroxide solution 0.4-0.6, be placed in fermentation vat, now with the current; 2) soak: broken silicon wafers is placed in the step 1 in fermentation vat) soak prepared, stir and soak 6-8 hour after removing floating foreign material, broken silicon wafers floating, obtains broken silicon wafers floating thing; 3) drifting about: by step 2) the broken silicon wafers floating thing that obtains proceeds in potcher and drifts about with pure water, drift about after terminating and to obtain broken silicon wafers cleaning material through drying.
Embodiment 1:
Remove a method for impurity in broken silicon wafers, comprise the following steps:
1) soak is prepared: get 55% concentration hydrogen fluoric acid 0.9, pure water 9.5,30% concentration of hydrogen peroxide solution 0.4, be placed in fermentation vat, now with the current; 2) soak: broken silicon wafers is placed in the step 1 in fermentation vat) soak prepared, stir and soak 6 hours after removing floating foreign material, broken silicon wafers floating, obtains broken silicon wafers floating thing; 3) drifting about: by step 2) the broken silicon wafers floating thing that obtains proceeds in potcher and drifts about with pure water, drift about after terminating and to obtain broken silicon wafers cleaning material through drying.
Embodiment 2:
Remove a method for impurity in broken silicon wafers, comprise the following steps:
1) soak is prepared: get 55% concentration hydrogen fluoric acid 1, pure water 10,30% concentration of hydrogen peroxide solution 0.5, be placed in fermentation vat, now with the current; 2) soak: broken silicon wafers is placed in the step 1 in fermentation vat) soak prepared, stir and soak 7 hours after removing floating foreign material, broken silicon wafers floating, obtains broken silicon wafers floating thing; 3) drifting about: by step 2) the broken silicon wafers floating thing that obtains proceeds in potcher and drifts about with pure water, drift about after terminating and to obtain broken silicon wafers cleaning material through drying.
Embodiment 3:
Remove a method for impurity in broken silicon wafers, comprise the following steps:
1) soak is prepared: get 55% concentration hydrogen fluoric acid 1.1, pure water 10.5,30% concentration of hydrogen peroxide solution 0.6, be placed in fermentation vat, now with the current; 2) soak: broken silicon wafers is placed in the step 1 in fermentation vat) soak prepared, stir and soak 8 hours after removing floating foreign material, broken silicon wafers floating, obtains broken silicon wafers floating thing; 3) drifting about: by step 2) the broken silicon wafers floating thing that obtains proceeds in potcher and drifts about with pure water, drift about after terminating and to obtain broken silicon wafers cleaning material through drying.
Broken silicon wafers that above embodiment obtains cleaning material, the impurity such as no-sundries, metal, stone, fiber, can be used as silicon chip reprocessing raw material after testing.
Above embodiment illustrating only to spirit of the present invention, those skilled in the art can make the amendment of different modes or supplement or adopt similar mode to replace to described embodiment, but not depart from the scope that spirit of the present invention defines.
Claims (4)
1. remove a method for impurity in broken silicon wafers, comprise the following steps: preparation soak → immersion → drift, is characterized in that:
(1) soak is prepared: get 55% concentration hydrogen fluoric acid 0.9-1.1, pure water 9.5-10.5,30% concentration of hydrogen peroxide solution 0.4-0.6, be placed in fermentation vat, now with the current; (2) soak: broken silicon wafers is placed in the soak that the step (1) in fermentation vat is prepared, stir and soak 6-8 hour after removing floating foreign material, broken silicon wafers floating, obtains broken silicon wafers floating thing; (3) drifting about: the broken silicon wafers floating thing that step (2) obtains is proceeded in potcher and drift about with pure water, drifting about after terminating through drying to obtain broken silicon wafers cleaning material.
2. the method for impurity in removing broken silicon wafers according to claim 1, is characterized in that:
(1) soak is prepared: get 55% concentration hydrogen fluoric acid 0.9, pure water 9.5,30% concentration of hydrogen peroxide solution 0.4, be placed in fermentation vat, now with the current; (2) soak: broken silicon wafers is placed in the soak that the step (1) in fermentation vat is prepared, stir and soak 6 hours after removing floating foreign material, broken silicon wafers floating, obtains broken silicon wafers floating thing; (3) drifting about: the broken silicon wafers floating thing that step (2) obtains is proceeded in potcher and drift about with pure water, drifting about after terminating through drying to obtain broken silicon wafers cleaning material.
3. the method for impurity in removing broken silicon wafers according to claim 1, is characterized in that:
(1) soak is prepared: get 55% concentration hydrogen fluoric acid 1, pure water 10,30% concentration of hydrogen peroxide solution 0.5, be placed in fermentation vat, now with the current; (2) soak: broken silicon wafers is placed in the soak that the step (1) in fermentation vat is prepared, stir and soak 7 hours after removing floating foreign material, broken silicon wafers floating, obtains broken silicon wafers floating thing; (3) drifting about: the broken silicon wafers floating thing that step (2) obtains is proceeded in potcher and drift about with pure water, drifting about after terminating through drying to obtain broken silicon wafers cleaning material.
4. the method for impurity in removing broken silicon wafers according to claim 1, is characterized in that:
(1) soak is prepared: get 55% concentration hydrogen fluoric acid 1.1, pure water 10.5,30% concentration of hydrogen peroxide solution 0.6, be placed in fermentation vat, now with the current; (2) soak: broken silicon wafers is placed in the soak that the step (1) in fermentation vat is prepared, stir and soak 8 hours after removing floating foreign material, broken silicon wafers floating, obtains broken silicon wafers floating thing; (3) drifting about: the broken silicon wafers floating thing that step (2) obtains is proceeded in potcher and drift about with pure water, drifting about after terminating through drying to obtain broken silicon wafers cleaning material.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510043377.XA CN104616975A (en) | 2015-01-21 | 2015-01-21 | Method for removing impurities in broken silicon wafer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510043377.XA CN104616975A (en) | 2015-01-21 | 2015-01-21 | Method for removing impurities in broken silicon wafer |
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| Publication Number | Publication Date |
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| CN104616975A true CN104616975A (en) | 2015-05-13 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201510043377.XA Pending CN104616975A (en) | 2015-01-21 | 2015-01-21 | Method for removing impurities in broken silicon wafer |
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| CN (1) | CN104616975A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106583053A (en) * | 2016-12-21 | 2017-04-26 | 晶科能源有限公司 | Silicon material floatation and cleaning method |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101495682A (en) * | 2006-07-28 | 2009-07-29 | 瓦克化学股份公司 | Method and device for producing classified high-purity polycrystalline silicon fragments |
| CN102267700A (en) * | 2011-08-04 | 2011-12-07 | 江西旭阳雷迪高科技股份有限公司 | Method for separating and removing organic fine impurities from crushed silicon chip |
| CN102856431A (en) * | 2012-08-12 | 2013-01-02 | 安阳市凤凰光伏科技有限公司 | Method for treating residual glue of solar cell fragments |
-
2015
- 2015-01-21 CN CN201510043377.XA patent/CN104616975A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101495682A (en) * | 2006-07-28 | 2009-07-29 | 瓦克化学股份公司 | Method and device for producing classified high-purity polycrystalline silicon fragments |
| CN102267700A (en) * | 2011-08-04 | 2011-12-07 | 江西旭阳雷迪高科技股份有限公司 | Method for separating and removing organic fine impurities from crushed silicon chip |
| CN102856431A (en) * | 2012-08-12 | 2013-01-02 | 安阳市凤凰光伏科技有限公司 | Method for treating residual glue of solar cell fragments |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106583053A (en) * | 2016-12-21 | 2017-04-26 | 晶科能源有限公司 | Silicon material floatation and cleaning method |
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Application publication date: 20150513 |
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| WD01 | Invention patent application deemed withdrawn after publication |