CN106328561A - Nondestructive cleaning device of graphic wafer capable of improving cleaning uniformity - Google Patents
Nondestructive cleaning device of graphic wafer capable of improving cleaning uniformity Download PDFInfo
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- CN106328561A CN106328561A CN201610740339.4A CN201610740339A CN106328561A CN 106328561 A CN106328561 A CN 106328561A CN 201610740339 A CN201610740339 A CN 201610740339A CN 106328561 A CN106328561 A CN 106328561A
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- Prior art keywords
- quartz
- wafer
- cleaning
- microresonator
- ultrasound wave
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/02—Cleaning by the force of jets or sprays
- B08B3/024—Cleaning by means of spray elements moving over the surface to be cleaned
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/10—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration
- B08B3/12—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration by sonic or ultrasonic vibrations
Abstract
The invention discloses a nondestructive cleaning device of a graphic wafer capable of improving the cleaning uniformity. An ultrasonic/megasonic generation mechanism and a bottom quartz device which are clung from top to bottom are arranged in a shell seal cavity, wherein the bottom quartz device comprises connected annular quartz microresonator protection ring and quartz microresonator array; the quartz microresonator array comprises a plurality of vertical rodlike quartz structures; the lower end of a groove of the annular quartz microresonator protection ring extends outside from the lower end surface of the shell; the lower end surface of the quartz microresonator array is not higher than that of the groove and the lower end surfaces of the rodlike quartz structures have different heights; and ultrasonic/megasonic energy of which the propagation direction is not vertical to the surface direction of the wafer can be selectively removed through the quartz microresonator array and the ultrasonic/megasonic energy on the surface of the graphic wafer can be uniformly distributed, thereby achieving a uniform and nondestructive cleaning effect in a random region in the overall graphic wafer range within certain cleaning time.
Description
Technical field
The present invention relates to semiconductor integrated circuit processing cleaning equipment field, be used for cleaning figure more particularly, to one
Shape wafer also can improve the not damaged cleaning device cleaning the uniformity.
Background technology
Along with the high speed development of semiconductor integrated circuit manufacturing technology, the pattern character size of IC chip has been enter into
To the deep-submicron stage, and cause the feature chi of the crucial pollutant (such as granule) of superfine circuit malfunction or damage on chip
Very little greatly reduce the most therewith.
During the production and processing technology of integrated circuit, semiconductor crystal wafer the most all can be through such as thin film deposition, quarter
The multiple tracks processing steps such as erosion, polishing.And these processing steps just become the important place that pollutant produces.In order to keep wafer table
The clean conditions in face, eliminates the pollutant being deposited on crystal column surface in each processing step, it is necessary to subjected to per pass technique
Wafer after step is carried out processing.Therefore, cleaning becomes most common processing step in integrated circuit fabrication process,
Its object is to efficiently control the contamination level of each step, to realize the target of each processing step.
In order to effectively remove the pollutant of crystal column surface, when carrying out single-wafer wet clean process, wafer will
It is placed on the rotation platform (such as rotary chuck) of cleaning equipment, and rotates according to certain speed；Simultaneously to wafer
The chemical liquid of surface spraying certain flow, is carried out crystal column surface.
Remove while pollutant purpose being reached by cleaning, it is most important that ensure to wafer, especially for
The not damaged of figure crystal column surface figure cleans.
Along with reducing of integrated circuit pattern characteristic size, the removal difficulty of the smaller size of pollutant of crystal column surface is the most not
Disconnected increasing.A lot of Novel washing technology are applied on cleaning equipment.Wherein, most important one is ultrasound wave/million sound
Ripple cleaning technique.But, use ultrasound wave/mega sonic wave cleaning technique while improve pollutant removal efficiency, also can not
Bring the damage problem for figure wafer with avoiding.This is ultrasonic with crystal column surface off plumb mainly due to the direction of propagation
Ripple/megasonic energy is more than the adhesive force of surfacial pattern and wafer to the active force that figure crystal column surface figure is horizontal, causes
Destruction to surfacial pattern when ultrasound wave/mega sonic wave cleans.
The Chinese invention patent application of Application No. 201510076158.1 discloses a kind of figure wafer not damaged and cleans
Device, this device includes that one is suspended at the hollow housing above figure wafer, is provided with ultrasound wave generation machine inside the hollow of housing
Structure, connects a ultrasonic energy selective removal mechanism below ultrasound wave generating mechanism, ultrasonic energy selective removal mechanism
The contour array constituted including the quartz pushrod arranged by multiple down suctions, quartz pushrod array stretches out the figure that submerges below housing
In cleaning medicinal liquid on wafer, the direction of propagation and the crystal column surface off plumb ultrasound wave that will transfer out from ultrasound wave generating mechanism
Energy carries out selective removal, makes ultrasonic energy vertical conduction to wafer, it is ensured that during ultrasonic waves for cleaning, ultrasound wave
Energy do not result in the damage of figure crystal column surface figure, thus realize the not damaged ultrasound wave of figure wafer is moved clearly
Wash, and the removal efficiency of wafer surface pollutant can be effectively improved.
Along with integrated circuit feature size enters into the deep-submicron stage, the wet method in IC wafers manufacturing process is rotten
Erosion and the control cleaned require and precision to be corroded is more and more higher, but granule to be cleaned is more and more less, thus
Corrosion and the uniformity cleaned become a challenging problem.Use the chemical attack under ultrasound wave/mega sonic wave effect and
Clean the effect helping speed up corrosion and cleaning, drastically increase the removal rate of particulate pollutant.But ultrasound wave/million sound
Uniformity controlling in ripple cleaning process is always a technical barrier in this field.If obtain in cleaning process is ultrasonic
Ripple/megasonic energy is very few, can reduce the removal efficiency of these regions particulate pollutant, if the energy obtained is too much, then having can
Can cause the damage of regional area crystal column surface figure structure.
But, above-mentioned Chinese invention patent application is disclosed cleans device, all in the quartz pushrod array of its device bottom surface
The bottom surface, lower end of quartz pushrod is all generally flush with.If the bottom surface of device is the most parallel with the surface of wafer, can cause the two it
Between distance vary widely with position, cause the uneven distribution of acoustic wave energy.Such as clean dress when ultrasound wave/mega sonic wave
When being set to cover crystal circle center to the sector region at edge, device bottom surface and the wafer distance of crystal circle center position may be produced
Less, and be gradually increased with radius, the problem that device bottom surface and wafer distance are gradually increased, cause uneven point of acoustic wave energy
Cloth.
Accordingly, it would be desirable to a kind of effective new equipment of design, with in the areal extent of whole wafer, it is achieved ultrasound wave/million
Being uniformly distributed of acoustic wave energy.
Summary of the invention
It is an object of the invention to the drawbacks described above overcoming prior art to exist, it is provided that a kind of novel improved cleaning is equal
The figure wafer not damaged of evenness cleans device, when wafer carrying out ultrasound wave/mega sonic wave and cleaning, it is possible to change dress in real time
Distance between bottom set face and wafer, makes the ultrasound wave/megasonic energy of crystal column surface be uniformly distributed, and can eliminate propagation side
To with the crystal column surface off plumb ultrasound wave/megasonic energy destructive shadow to figure crystal column surface figure horizontal force
Ring, it is achieved the not damaged of figure wafer is uniformly cleaned.
For achieving the above object, technical scheme is as follows:
A kind of figure wafer not damaged improving the cleaning uniformity cleans device, including:
Upper and lower casing, its connection forms annular seal space, and described annular seal space forms opening in the lower surface of lower house；
Ultrasound wave/mega sonic wave generating mechanism, is located in annular seal space, between having between its top and sidepiece and annular seal space inwall
Gap；
Bottom quartz member, including the ring-type quartz microresonator guard circle of a downwardly open groove of formation, and one
The quartzy microresonator battle array being made up of multiple vertical bar-shaped quartz construction that upper end is connected at bottom portion of groove, lower end is free end
Row, ultrasound wave/mega sonic wave generating mechanism bottom, its sidepiece and annular seal space are close in described ring-type quartz microresonator guard circle top
Being tightly connected between the inwall of lower housing section, its groove lower end is stretched out by the opening of lower house lower surface, described quartz
The lower surface of microresonator array is not higher than the lower surface of groove, has different between the lower surface of its each bar-shaped quartz construction
Highly；
Wherein, described device connects its spray arm moved of control, and it is super that described ultrasound wave/mega sonic wave generating mechanism produces
Acoustic wave energy, sequentially passes through ring-type quartz microresonator guard circle, quartz microresonator array conducts downwards, and through described quartz
After the selective removal of microresonator array, by submerging under the described bar-shaped quartz construction in figure wafer supernatant wash liquid
End face vertical conduction to figure crystal column surface, drives and cleans medicinal liquid vibration, moves cleaning carrying out ultrasound wave/mega sonic wave, meanwhile,
In figure wafer rotary course, by having each bar-shaped quartz construction of differing heights lower surface, figure crystal column surface is made to appoint
The region of meaning position is all through the cleaning of differing heights quartz microresonator array, so that ultrasound wave/million of figure crystal column surface
Acoustic wave energy is uniformly distributed, it is achieved in certain scavenging period, makes the arbitrary region in the range of whole figure wafer all obtain
Uniform cleaning.
Preferably, also including an electric rotating machine connecting spray arm, the rotating shaft of described electric rotating machine connects described device,
For controlling the horizontal rotation of described device.
Preferably, the rotating shaft bias of described electric rotating machine connects the top of described device upper shell.
Preferably, described upper shell is provided with gas access and outlet, and its connection is by annular seal space inwall and ultrasound wave/mega sonic wave
The cooling chamber of generating mechanism outer wall composition, for being passed through cooling gas by gas access, to ultrasound wave/mega sonic wave generating mechanism
Cool down, and discharged by gas outlet.
Preferably, the connection of described lower house sidepiece is provided with gas atmosphere inlet and outlet, and the outlet of described protective gas is one
The pore that has a down dip of circle or slit, be used as to be passed through protective gas by gas atmosphere inlet, and by protective gas outlet ejection, with
Figure crystal column surface forms a gas blanket.
Preferably, described upper shell is provided with gas access, and described lower house sidepiece is provided with gas outlet, described gas outlet
It is the pore that has a down dip of a circle or slit, described gas access and outlet are occurred by annular seal space inwall and ultrasound wave/mega sonic wave
The cooling chamber of mechanism's outer wall composition, for being passed through cooling gas by gas access, is carried out ultrasound wave/mega sonic wave generating mechanism
Cooling, and while being discharged diagonally downward by gas outlet, form a gas blanket at figure crystal column surface.
Preferably, the recess sidewall of described ring-type quartz microresonator guard circle is provided with one to some perforates, is used for making clear
Wash liquid frees in and out the gap between quartz microresonator array and figure crystal column surface.
Preferably, described quartz the bar-shaped quartz construction of microresonator array shape include circle, triangle, pentagon or
Rectangle, each bar-shaped quartz construction is according to certain regular distribution, or is distributed according to random fashion.
Preferably, the lower surface profile of described quartz microresonator array forms sector, triangle, pentagon or length
Bar shaped.
Preferably, described ultrasound wave/mega sonic wave generating mechanism includes piezoelectric and coupling layer, the institute being close to arrange up and down
Stating coupling layer bottom and be close to ring-type quartz microresonator guard circle top, described piezoelectric, coupling layer and ring-type quartz are micro-common
The chamber guard circle that shakes is entered by holddown spring set successively between upper shell top and piezoelectric and holddown spring lead
Row compresses；Described upper shell is equipped with piezoelectric binding post, for external electric signal is directed into piezoelectric, and by connecting
Coupling layer binding post forms loop, to produce ultrasound wave/mega sonic wave oscillation energy.
The invention have the advantages that
1) by the quartzy microresonator array structure of quartz member bottom appropriate design, it is achieved remove on other direction
Ultrasound wave/megasonic energy, only retains the mesh of the direction of propagation ultrasound wave/megasonic energy vertical with crystal column surface to be cleaned
, it is ensured that in ultrasound wave/mega sonic wave cleaning process, the energy of ultrasound wave/mega sonic wave does not results in figure crystal column surface figure
Damage；
2) be there is each bar-shaped quartz construction of differing heights lower surface by setting, can during wafer rotary-cleaning,
And by the rotary motion of device self, make the highly dynamic change of device bottom surface and crystal column surface, change device in real time
Distance between bottom surface and crystal column surface, makes the region of figure crystal column surface optional position all through the differing heights micro-resonance of quartz
The cleaning of chamber array, it is possible to make the ultrasound wave/megasonic energy of figure crystal column surface be uniformly distributed, it is achieved in certain cleaning
In time, make the effect that the arbitrary region in the range of whole figure wafer is the most uniformly cleaned；
3) shape of the quartz bar-shaped quartz construction of microresonator array can include circular and some other shape, such as
Triangle, pentagon, rectangle etc.；Meanwhile, the arrangement of each bar-shaped quartz construction can be according to certain regular distribution, it is also possible to
Completely random is distributed, in case form the region that energy is higher with spray arm when locking apparatus swings in specific region, makes ultrasound wave/million
The Energy distribution of sound wave is the most uniform；
4) on ring-type quartz microresonator guard circle, have perforate, cleaning medicinal liquid can be made to free in and out quartz microresonator
Gap between array and figure crystal column surface, to eliminate the surface tension effects of crystal column surface cleaning medicinal liquid, improves and cleans medicine
The replacement result of liquid, accelerates the exchange process of medicinal liquid new, old, improves the effect cleaned；
5) device may be designed so that sector, triangle, pentagon or strip, can improve the coverage rate of device
Long-pending, such that it is able to improve the cleaning efficiency of device；
6) during cleaning, utilize protective gas to form a gas blanket above wafer, wafer can be made
With oxygen-barrier, prevent crystal column surface silicon materials oxidized；In dry run, owing to wafer is completely in covering of protective gas
Under lid, when wafer high speed rotating, being dried of whole wafer scope can be better achieved, prevent the generation of washmarking defect, also
Being dried of crystal round fringes can be better achieved.
Accompanying drawing explanation
Fig. 1 is a kind of knot improving the figure wafer not damaged cleaning device cleaning the uniformity in one embodiment of the invention
Structure sectional view；
Fig. 2 is the structure sectional view of the bottom quartz member in one embodiment of the invention；
Fig. 3 is the perspective view of quartz member bottom Fig. 2；
Fig. 4 is the contour structures schematic diagram of Fig. 1 device；
Fig. 5 is a kind of mated condition schematic diagram of assembly of the invention and spray arm；
Fig. 6 is the another kind of mated condition schematic diagram of assembly of the invention and spray arm；
Fig. 7 is a kind of partial enlargement view of Fig. 6；
Fig. 8 is that the principle of the quartzy microresonator array selective removal portion of ultrasonic sound wave/megasonic energy of the present invention is shown
It is intended to；
Fig. 9 is a kind of figure wafer improving the cleaning uniformity with gas shield effect in one embodiment of the invention
Not damaged cleans the structure sectional view of device；
Figure 10 is the contour structures schematic diagram of Fig. 9；
Figure 11 is a kind of figure improving the cleaning uniformity with gas shield effect in another embodiment of the present invention
Wafer not damaged cleans the structure sectional view of device；
Figure 12 is the contour structures schematic diagram of Figure 11；
Figure 13 is the ring-type quartz microresonator guard circle structural representation being provided with perforate in one embodiment of the invention；
Figure 14 is the triangle of regular distribution bar-shaped quartz construction schematic diagram in one embodiment of the invention；
Figure 15 is the rectangle of random distribution bar-shaped quartz construction schematic diagram in one embodiment of the invention；
Figure 16 is the fan-shaped quartz microresonator array schematic diagram in one embodiment of the invention；
Figure 17 is the rectangle quartz microresonator array schematic diagram in one embodiment of the invention.
10. quartz microresonator array in figure, 11. quartz microresonator guard circles, 11 '. quartz microresonator guard circle
Perforate, 12. sealing rings, 13. coupling layers, 14. piezoelectrics, 15. holddown spring leads, 16. spray arm fixed-use bolt holes,
17. binding posts, 18. holddown springs, 19. upper shells, 20. sealing gaskets, quartz member bottom 21., 22. lower houses, 23. cooling gas
Body entrance, 24/24 '. cooling gas outlet, 25. spray arms, 26. fixed supports, 27. electric rotating machines, 28. cleaning medicinal liquids, 29.
Wafer, 29 '. crystal column surface figure structure, 30. gas atmosphere inlets, 31. protective gas outlets, 32. upper-lower casing fixing holes,
A. the direction of propagation and crystal column surface off plumb ultrasound wave/megasonic energy, ultrasonic vertical with crystal column surface in the B. direction of propagation
Ripple/megasonic energy.
Detailed description of the invention
Below in conjunction with the accompanying drawings, the detailed description of the invention of the present invention is described in further detail.
It should be noted that in following detailed description of the invention, when describing embodiments of the present invention in detail, in order to clear
Ground represent the structure of the present invention so that explanation, special to the structure in accompanying drawing not according to general scale, and carried out local
Amplify, deform and simplification process, therefore, should avoid being understood in this, as limitation of the invention.
In detailed description of the invention of the invention below, first referring to Fig. 1, Fig. 1 is the one in one embodiment of the invention
Improve the structure sectional view of the figure wafer not damaged cleaning device cleaning the uniformity.As it is shown in figure 1, a kind of raising of the present invention
The figure wafer not damaged cleaning the uniformity cleans device, above the removable figure wafer being suspended in cleaning equipment, is used for
The figure wafer being placed on rotation platform carries out ultrasound wave/mega sonic wave medicinal liquid clean.Described device includes upper and lower casing
19,22, and the ultrasound wave being arranged in upper and lower shell body/mega sonic wave generating mechanism 14,13 and bottom quartz member 21.Upper and lower
Housing 19,22 can use removably to be attached, such as, can be fixedly connected upper and lower casing by bolt, and
Annular seal space is formed therein after connection.Described annular seal space has opening in the lower surface of lower house.After ensureing to install
Upper and lower casing sealing property, can be equipped with sealing gasket 20 between the joint portion of upper and lower casing.
Refer to Fig. 1.A ultrasound wave/mega sonic wave generating mechanism 14 and 13 it is provided with inside annular seal space.Ultrasound wave/million sound
There is between top and sidepiece and the inwall of annular seal space of ripple generating mechanism gap, thus define a cooling chamber.Ultrasonic
The lower section of ripple/mega sonic wave generating mechanism is provided with a bottom quartz member 21 to fit tightly mode.Bottom quartz member bag
Include and be vertically connected with of setting ring-type quartz microresonator guard circle 11 and a quartzy microresonator array 10.Ring-type quartz
Microresonator guard circle 11 has the groove structure being formed down opening, and quartz microresonator array 10 is arranged on groove structure
In；Bottom the upper end connecting groove of quartz microresonator array 10, lower end is free end；Quartz microresonator array 10 is by multiple
Vertical bar-shaped quartz construction one microresonator array of composition.
Bottom quartz member 21 is by the ring-type quartz top of microresonator guard circle 11 and ultrasound wave/mega sonic wave generation machine
The bottom of structure 14 and 13 is formed and fits tightly connection；Further, bottom quartz member 21 is by ring-type quartz microresonator guard circle
The sidepiece of 11 carries out step installation and coordinates with the annular seal space inwall of lower house 22 part.Similarly, after in order to ensure to install
Sealing property between lower house 22 and bottom quartz member 21, at lower house 22 and ring-type quartz microresonator guard circle 11
Can be equipped with sealing ring 12 between joint portion.
Refer to Fig. 1.The groove lower end of ring-type quartz microresonator guard circle 11 is free end, and it is by lower house 22 lower end
The opening part in face extends downwardly from lower house.The lower surface of described quartz microresonator array 10 is not higher than ring-type quartz microresonator
The lower surface of guard circle groove, the lower surface of the most described quartz microresonator array 10 can be micro-common less than or equal to ring-type quartz
Shake the groove lower surface of chamber guard circle 11.It is illustrated as a kind of quartz microresonator array lower surface less than ring-type quartz microresonator
The situation of guard circle groove lower surface.
Referring to the structure sectional view that Fig. 2 and Fig. 3, Fig. 2 are the bottom quartz members in one embodiment of the invention, Fig. 3 is
The perspective view of quartz member bottom Fig. 2.As shown in Figures 2 and 3, in bottom quartz member 21, its quartz is micro-common
Shake chamber array 10 each bar-shaped quartz construction lower surface between there is different height.For example, it is possible to be bar-like quartz construction
Lower surface between respectively there is different height, it is also possible to be that the lower surface of the bar-shaped quartz construction of part has identical minimum height
Degree, additionally respectively has different height between the lower surface of each bar-shaped quartz construction of part, and is all higher than above-mentioned minimum
Highly.
In the installation of bottom quartz member 21, debugging, test process, can be with hand-held ring-type quartz microresonator protection
Circle, it is to avoid the bar-shaped quartz construction that directly contact strength is more weak, causes the damage of bar-shaped quartz construction.Quartz member bottom surface, bottom
On quartzy microresonator array vertical with crystal column surface direction, the size of bar-shaped quartz construction can be diameter 0.5-5mm it
Between, length, at more than 2mm, can carry out corresponding configuration according to the difference of ultrasound wave/mega sonic wave operating frequency.Bar-shaped quartz construction
Quantity and distribution density can also configure with working ability according to actual needs accordingly.
Please continue to refer to Fig. 1.Described ultrasound wave/mega sonic wave generating mechanism can be selected for ultrasound wave/million based on piezoelectric
Sonic generator.In the present embodiment, described ultrasound wave/mega sonic wave generating mechanism can include the piezoelectric being close to connect up and down
14 and coupling layer 13.Coupling layer can use metal to make.The bottom of described coupling layer 13 fits tightly ring-type quartz microresonator
The top of guard circle 11.For ensureing to connect effect and centering, the bottom of described coupling layer 13 is protected with ring-type quartz microresonator
The flute profile connected mode of diagram can be used between the top of guard ring 11.The sidepiece of described coupling layer 13, the sidepiece of piezoelectric 14
And there is between top and the inwall of annular seal space certain gap, it is beneficial to carry out gas cooling.
Some holddown springs 18 and holddown spring lead it is sequentially arranged with between upper shell 19 top and piezoelectric 14
15, under the guide effect of holddown spring lead 15, holddown spring 18 in the vertical direction is in impaction state, and by piezoelectricity
Material 14, coupling layer 13 are pressed downward against, and are allowed between ring-type quartz microresonator guard circle 11 and the device lower house 22 of bottom
There is no gap, it is simple to effective transmission of ultrasound wave/megasonic energy.
Described upper shell, equipped with piezoelectric binding post 17, for external electric signal is directed into piezoelectric 14, and leads to
Cross connection coupling layer binding post and form loop, to produce ultrasound wave/mega sonic wave oscillation energy.Piezoelectric 14 receive the signal of telecommunication with
The rear stretching vibration at a high speed that produces, formation ultrasound wave/mega sonic wave vibration, and oscillation energy is conducted downwards to coupling layer 13.
Described coupling layer 13 is made for single metal or various metals, its thickness be ultrasound wave produced by piezoelectric/
The integer of mega sonic wave wavelength extraordinarily 1/4 wavelength.Coupling layer 13 can be bonded with piezoelectric 14 by conducting resinl.Piezoelectric and coupling
Close layer surface and can coat corrosion-resistant finishes, prevent cleaning medicinal liquid and coupling layer metal and piezoelectric are produced corrosion.
Can be closed by conducting resinl or low melting point between described coupling layer 13 and ring-type quartz microresonator guard circle 11
Gold or the foil such as the softer gold of hardness or silver connect, to ensure not having therebetween gap.
Refer to the contour structures schematic diagram that Fig. 4, Fig. 4 are Fig. 1 devices.As shown in Figure 4, upper shell 19 is provided with cooling gas
Entrance 23 and outlet 24, it connects the cooling chamber being made up of annular seal space inwall and ultrasound wave/mega sonic wave generating mechanism outer wall.Can lead to
Cooling gas is introduced by device upper shell 19, device lower house 22, coupling layer 13 and bottom stone by supercooling gas access 23
The device internal cavities of English parts 21 composition, after completing the heat exchange with piezoelectric 14 and coupling layer 13, by cooling gas
Outlet 24 discharge, to realize effectively cooling down piezoelectric and the coupling layer of ultrasound wave/mega sonic wave generating mechanism.
Refer to a kind of mated condition schematic diagram that Fig. 5, Fig. 5 are assembly of the invention and spray arm.As it is shown in figure 5, can
The upper shell 19 of apparatus of the present invention is attached with spray arm 25 by fixed support 26, brilliant to realize spray arm drive figure
Circle not damaged cleans device and makees reciprocal circular motion at crystal column surface and carry out ultrasound wave/mega sonic wave and move cleaning, and realizes wafer
The uniform fold of ultrasonic surface/megasonic energy.
Apparatus of the present invention are selectively removed portion of ultrasonic sound wave/megasonic energy, and its operation principle can be entered by Fig. 8
One step explanation.As shown in Figure 8, after piezoelectric 14 receives the signal of telecommunication, produce ultrasound wave/mega sonic wave vibrate, ultrasound wave/
Megasonic energy is conducted downwards to bottom quartz member 21 by coupling layer 13, and travel downward extremely quartzy micro-resonance further
On chamber array 10.Ultrasound wave/megasonic energy is when quartz microresonator internal communication, and the direction of propagation is vertical with crystal column surface
Ultrasound wave/megasonic energy B can arrive in the cleaning medicinal liquid layer 28 on wafer 29 surface smoothly, drives and cleans medicinal liquid vibration, real
Now remove the purpose of pollutant.And the direction of propagation can be micro-common at quartz with crystal column surface off plumb ultrasound wave/megasonic energy A
Shaking and refraction and reflection occur on the sidewall in chamber 10, in this process, part energy is consumed to heat energy or other form is released
Put.After the repeatedly refraction on the sidewall at quartz microresonator and reflection, the direction of propagation surpasses with crystal column surface off plumb
Sound wave/megasonic energy A is the most depleted, it is achieved only retain ultrasound wave/mega sonic wave energy that the direction of propagation is vertical with crystal column surface
The purpose of amount B, thus can ensure that the energy of ultrasound wave/mega sonic wave does not results in figure in ultrasound wave/mega sonic wave cleaning process
The damage of crystal column surface figure structure 29 '.
Therefore, the ultrasound wave/megasonic energy transferred out from the piezoelectric of ultrasound wave/mega sonic wave generating mechanism, through stone
After the selective removal of English microresonator, by the lower end of the bar-shaped quartz construction cleaned in medicinal liquid on figure wafer of submerging,
Can vertical conduction to figure crystal column surface, thus under the drive of spray arm, carry out ultrasound wave/mega sonic wave move cleaning.With
Time, in figure wafer rotary course, by having each bar-shaped quartz construction of differing heights lower surface, can change in real time
Distance between device bottom surface and crystal column surface, the region making figure crystal column surface optional position is all micro-through differing heights quartz
The cleaning of resonant cavity array, it is possible to make the ultrasound wave/megasonic energy of figure crystal column surface be uniformly distributed, it is achieved certain
In scavenging period, make the effect that the arbitrary region in the range of whole figure wafer is the most uniformly cleaned.
The corresponding process of device is cleaned as follows with above-mentioned figure wafer not damaged:
First external circuit and these figures such as ultrasound wave/mega sonic wave signal generator, power amplifier, impedance matching box are connected
Shape wafer not damaged cleans device, sets ultrasound wave/mega sonic wave operating frequency and power.
Then setting spray arm swinging track, cleaning medicinal liquid flow, temperature, cleaning medicinal liquid conduit positions, scavenging period, cold
But throughput, and the parameter such as the gap of this cleaning device and wafer, it is achieved equal at crystal column surface of ultrasound wave/megasonic energy
Even covering.
Then run and clean menu, after piezoelectric receives the signal of telecommunication, high frequency telescopic shape change occurs, is formed ultrasonic
Ripple/mega sonic wave vibration；This oscillation energy conducts to bottom of device quartz member down through by coupling layer；Ultrasound wave/million sound
After wave energy is propagated via quartz microresonator, only remain ultrasound wave/mega sonic wave that the direction of propagation is vertical with crystal column surface
Energy, and conduction is extremely cleaned in medicinal liquid layer further downward.
Now, in cleaning medicinal liquid, only exist the direction of propagation vertical with crystal column surface, namely with crystal column surface figure longitudinally
The vibrational energy that direction is parallel.This energy drives and cleans liquid vibration, accelerates the pollutant between crystal column surface figure and departs from crystalline substance
Circular surfaces and the process of outwards quality transmission, improve the removal efficiency of crystal column surface pollutant, shorten the cleaning time.With
Time, after the propagation of quartz microresonator array on bottom of device quartz member, the direction of propagation and crystal column surface out of plumb
Ultrasound wave/megasonic energy be removed.Therefore, cleaning in medicinal liquid layer do not exist for crystal column surface figure structure horizontal
Shearing force, can protect graphic structure effectively, it is achieved the not damaged of figure wafer cleans.
Referring to the another kind of mated condition schematic diagram that Fig. 6 and Fig. 7, Fig. 6 are assembly of the invention and spray arm, Fig. 7 is
A kind of partial enlargement view of Fig. 6.As shown in Figure 6 and Figure 7, in order to solve non-homogeneous point of acoustic wave energy mentioned above
The problem of cloth, another solution is to install an electric rotating machine 27 at the top of device upper shell 19, electric rotating machine
Rotating shaft connects the upper shell 19 of described device, and the other end can connect spray arm 25 by fixed support 26.In cleaning process
In, utilize electric rotating machine that whole cleaning device can be driven to make horizontal revolving motion at crystal column surface.Also can turning electric rotating machine
Eccentric shaft is connected to the top of device upper shell, with rotation (swing) amplitude of aggrandizement apparatus.Meanwhile, quartz microresonator battle array is made
Row have different height (the most each bar-shaped quartz construction has different height), by the rotary motion of device self, can make
Obtain the device bottom surface height with crystal column surface in dynamically change.In certain scavenging period, in the range of reaching whole wafer, sound
The equally distributed effect of wave energy.
Current monolithic cleaning equipment is mainly come by jet cleaning liquid on wafer (wafer) surface of high speed rotating
Reach the purpose cleaned.In cleaning process, wafer is clamped by the multiple hold assemblies being arranged on circular card disc main body, folder
Hold parts and hold wafer to carry out high speed rotating.Meanwhile, above wafer, cleaning equipment is additionally provided with spray arm, can pass through
Spray arm is to crystal column surface jet cleaning medium.
In chemical liquid and ultra-pure water cleaning process, crystal column surface material is more susceptible to damage or some chemistry occur
Reaction.Such as, in DHF cleaning, first pass through spray arm and spray DHF to crystal column surface, by the autoxidation of crystal column surface
Layer erodes completely；Then crystal column surface is rinsed, by residual liquor and the product of crystal column surface by injection ultra-pure water
Wash out；Finally, then by injection N2Crystal column surface has been dried whole technical process.In this process, wafer table
The naked silicon materials in face are very easy to react with the oxygen in processing chamber, generate silicon dioxide, cause crystal column surface material
Change, follow-up technique is impacted.Accordingly, it would be desirable in technical process, the oxygen content in whole chamber is entered
Row controls.
On the other hand, at wafer N2In dry run, if technology controlling and process obtains bad, can occur at crystal column surface
Watermark (washmarking) defect.The dominant mechanism that Watermark is formed is at N2In dry run, incomplete and residual because being dried
Remaining in the water of crystal column surface, incorporate the SiO reacted and generate with oxygen2, and form H further2SiO3Or HSiO3-precipitation.
After the water of crystal column surface volatilizees, these precipitations i.e. form the washmarking of flat condition.Additionally, in above-mentioned cleaning process, the most often
Occurring there is the unseasoned phenomenon thoroughly of drop on crystal round fringes rib, this also result in certain impact for wafer cleaning quality.
Accordingly, it would be desirable to drying process is optimized, it is achieved being completely dried of whole wafer scope.
Further improvement of the present invention point is the function realizing gas shield on the basis of figure wafer not damaged cleans.
In technical process, utilize protective gas to form a gas blanket above wafer, protective gas can be nitrogen or
The noble gases such as argon.Such advantage is: (1), in technical process, makes wafer and oxygen-barrier, prevents crystal column surface silicon material
Expect oxidized；(2) in dry run, owing to wafer is completely under the covering of protective gas, when wafer high speed rotating, can
Preferably to realize being dried of whole wafer scope, prevent the generation of washmarking defect, it is also possible to preferably realize crystal round fringes
It is dried.
The realization of gas protecting function can be in the way of taking following two different.
Referring to Fig. 9 and Figure 10, Fig. 9 is that a kind of raising with gas shield effect in one embodiment of the invention is cleaned
The figure wafer not damaged of the uniformity cleans the structure sectional view of device；Figure 10 is the contour structures schematic diagram of Fig. 9.Such as Fig. 9 and
Shown in Figure 10, figure wafer not damaged can be used to clean the cooling gas of device as protective gas.Set at device upper shell 19
There is cooling gas inlet 23, as cooling gas and the co-portal of protective gas；At the sidewall of lower house 22 at bottom surface,
Process the slit that a ring shape has a down dip, or can also be a circle pore, as cooling gas and the conjoint outlet of protective gas
24’.Cooling gas from gas entrance 23 enters figure wafer not damaged and cleans inside device, i.e. by annular seal space inwall and ultrasonic
The cooling chamber of ripple/mega sonic wave generating mechanism outer wall composition, after completing the cooling to piezoelectric and coupling layer, goes out from a circle gas
Mouth 24 ' ejection, forms a gas blanket at crystal column surface simultaneously, and during control cleaning, the oxygen in chamber contains
Amount, prevents wafer from reacting with the oxygen in air.When drying process, cooling gas stays open, and plays injection protection
Gas realizes the purpose that crystal column surface is dried, and can replace the spray arm of tradition individually jet drying gas, make cleaning equipment chamber
Cell structure is simplified.When being dried, the figure wafer not damaged cleaning device with gas shield can be fixed on crystal circle center's spray
Penetrate, it is also possible to spray along arc swing at crystal column surface under the drive of spray arm.
Referring to Figure 11 and Figure 12, Figure 11 is a kind of raising with gas shield effect in another embodiment of the present invention
The figure wafer not damaged cleaning the uniformity cleans the structure sectional view of device；Figure 12 is the contour structures schematic diagram of Figure 11.As
Shown in Figure 11 and Figure 12, the another kind of implementation of gas protecting function, is to use a single gas atmosphere inlet 30 to lead to
Enter protective gas.Equally, the sidewall of device lower house process near the position of bottom surface slit that annular has a down dip or
One circle pore, as the outlet 31 of protective gas.It is passed through protective gas by gas atmosphere inlet 30, and is exported by protective gas
31 ejections, can form a gas blanket at crystal column surface, thus control the oxygen content in chamber, and at drying process
Time, the volume drying of crystal column surface is better achieved.
Effect around the annular quartz microresonator guard circle of quartz microresonator array setting is in quartz portion, bottom
In the installation of part, debugging, test process, can be with hand-held ring-type quartz microresonator guard circle, it is to avoid directly contact strength is more weak
Bar-shaped quartz construction, cause the damage of bar-shaped quartz construction.Meanwhile, quartz microresonator guard circle also needs to ensure to clean medicinal liquid
Can free in and out, and be full of the space between quartz microresonator array and crystal column surface, make ultrasound wave/megasonic energy energy
Enough it is effectively transmitted in the cleaning medicinal liquid thin layer of crystal column surface.
When quartz microresonator guard circle height with quartz microresonator array highly consistent time, figure wafer without
When device work is cleaned in damage, device distance crystal column surface has a certain distance, cleans medicinal liquid and can enter into quartzy micro-resonance
In the gap of chamber and crystal column surface.But due to the effect of surface tension of liquid, the replacement result cleaning medicinal liquid can be poor, shadow
Ring the exchange process of medicinal liquid new, old, cause cleaning performance poor.
Can have multiple as the scheme optimized further, such as, as shown in Fig. 2-Fig. 3, quartz microresonator can be made
The lower surface height of guard circle 11 is slightly less than the lower surface height of quartz microresonator array 10, in order to clean medicinal liquid turnover stone
Gap between English microresonator array and crystal column surface.But in this prioritization scheme, the bottom surface of quartz microresonator array is low
In the bottom surface of quartz microresonator guard circle, the protected effect for quartz microresonator is poor.
Therefore, it can be optimized further, such as, make height and the quartz microresonator of quartz microresonator guard circle
Array highly consistent, but in the recess sidewall of guard circle, have the perforate of given shape, make the cleaning medicinal liquid can be free
Gap between turnover quartz microresonator array and crystal column surface.Some embodiments include: as shown in figure 13, micro-common at quartz
Rectangular perforate 11 ' is had in the recess sidewall of chamber guard circle 11 of shaking；Or rectangle perforate can be used arch perforate
And the gate-shaped of other forms or window-like perforate substitute.
As other improvement, in quartz microresonator array the shape of bar-shaped quartz construction can include circle and its
Its some shapes, such as triangle, pentagon, the solid bar structure such as rectangle.Meanwhile, the arrangement of each bar-shaped quartz construction can
With according to certain regular distribution, it is also possible to completely random is distributed, in case in specific region shape when locking apparatus swings with spray arm
Becoming the region that energy is higher, the Energy distribution making ultrasound wave/mega sonic wave is the most uniform.Such as, as shown in figure 14, it is this
In a bright embodiment, quartz microresonator array 10 has the bottom quartz member of the bar-shaped quartz construction of triangle of regular distribution
Schematic diagram.The most as shown in figure 15, it has random distribution arrangement for quartz microresonator array 10 in one embodiment of the invention
The bottom quartz member schematic diagram of the bar-shaped quartz construction of rectangle.
As alternatively improved point, clean the cleaning efficiency of device for improving figure wafer not damaged, can be to cleaning device
Shape is optimized, and is i.e. optimized the monnolithic case of quartz microresonator array, to improve the area coverage cleaning device.
Such as, the horizontal profile of device may be designed so that sector, triangle, pentagon or strip (just) shape, i.e. makes quartz
The lower surface profile of microresonator array forms sector, triangle, pentagon or strip (just) shape.Such as, such as Figure 16 institute
Showing, it is that the figure wafer not damaged in one embodiment of the invention with fan-shaped profile quartz microresonator array 10 cleans device
Schematic diagram, can have piezoelectric, coupling layer and the bottom quartz member of sector in this device, upper-lower casing can be by upper lower casing
Body fixing hole 32 assembles.This apparatus structure can cover a sector region from wafer center of circle the to crystal round fringes, it is ensured that
Crystal column surface in this region can be cleaned simultaneously, improves cleaning efficiency with this, improves and cleans uniformity.And for example Figure 17
Shown in, it is the figure wafer not damaged in one embodiment of the invention with strip (just) shape profile quartz microresonator array 10
Clean device schematic diagram, this device can have the piezoelectric of strip, coupling layer and bottom quartz member, such that it is able to cover
A lid strip region from wafer center of circle the to crystal round fringes.
In sum, the present invention is by arranging based on piezoresistive material in the hollow housing of figure wafer not damaged cleaning device
The ultrasound wave of material/mega sonic wave generating mechanism produces sonic oscillation, and by not having of connecting below ultrasound wave/mega sonic wave generating mechanism
Enter the quartzy microresonator array in wafer supernatant wash liquid, by the direction of propagation and crystal column surface off plumb ultrasound wave/million sound
Wave energy carries out selective removal, makes ultrasound wave/megasonic energy vertical conduction to wafer, it is ensured that at ultrasound wave/mega sonic wave
In cleaning process, the energy of ultrasound wave/mega sonic wave does not results in the damage of figure crystal column surface figure, thus realizes figure brilliant
Not damaged ultrasound wave/the mega sonic wave of circle moves cleaning.Meanwhile, in figure wafer rotary course, by having under differing heights
The each bar-shaped quartz construction of end face, makes the region of figure crystal column surface optional position all through differing heights quartz microresonator battle array
The cleaning of row, so that the ultrasound wave/megasonic energy of figure crystal column surface is uniformly distributed, it is achieved in certain scavenging period,
The arbitrary region in the range of whole figure wafer is made to be cleaned the most uniformly.
The above-mentioned raising of the present invention is cleaned the figure wafer not damaged cleaning device of the uniformity and is had the advantage that
1) by the quartzy microresonator array structure of quartz member bottom appropriate design, it is achieved remove on other direction
Ultrasound wave/megasonic energy, only retains the mesh of the direction of propagation ultrasound wave/megasonic energy vertical with crystal column surface to be cleaned
, it is ensured that in ultrasound wave/mega sonic wave cleaning process, the energy of ultrasound wave/mega sonic wave does not results in figure crystal column surface figure
Damage；
2) be there is each bar-shaped quartz construction of differing heights lower surface by setting, can during wafer rotary-cleaning,
And by the rotary motion of device self, make the highly dynamic change of device bottom surface and crystal column surface, change device in real time
Distance between bottom surface and crystal column surface, makes the region of figure crystal column surface optional position all through the differing heights micro-resonance of quartz
The cleaning of chamber array, it is possible to make the ultrasound wave/megasonic energy of figure crystal column surface be uniformly distributed, it is achieved in certain cleaning
In time, make the effect that the arbitrary region in the range of whole figure wafer is the most uniformly cleaned；
3) shape of the quartz bar-shaped quartz construction of microresonator array can include circular and some other shape, such as
Triangle, pentagon, rectangle etc.；Meanwhile, the arrangement of each bar-shaped quartz construction can be according to certain regular distribution, it is also possible to
Completely random is distributed, in case form the region that energy is higher with spray arm when locking apparatus swings in specific region, makes ultrasound wave/million
The Energy distribution of sound wave is the most uniform；
4) on ring-type quartz microresonator guard circle, have perforate, cleaning medicinal liquid can be made to free in and out quartz microresonator
Gap between array and figure crystal column surface, to eliminate the surface tension effects of crystal column surface cleaning medicinal liquid, improves and cleans medicine
The replacement result of liquid, accelerates the exchange process of medicinal liquid new, old, improves the effect cleaned；
5) device may be designed so that sector, triangle, pentagon or strip, can improve the coverage rate of device
Long-pending, such that it is able to improve the cleaning efficiency of device；
6) during cleaning, utilize protective gas to form a gas blanket above wafer, wafer can be made
With oxygen-barrier, prevent crystal column surface silicon materials oxidized；In dry run, owing to wafer is completely in covering of protective gas
Under lid, when wafer high speed rotating, being dried of whole wafer scope can be better achieved, prevent the generation of washmarking defect, also
Being dried of crystal round fringes can be better achieved.
The above-described the preferred embodiments of the present invention that are only, described embodiment is also not used to limit the patent guarantor of the present invention
Protect scope, the equivalent structure change that the description of the most every utilization present invention and accompanying drawing content are made, in like manner should be included in
In protection scope of the present invention.
Claims (10)
1. one kind is improved the figure wafer not damaged cleaning device cleaning the uniformity, it is characterised in that including:
Upper and lower casing, its connection forms annular seal space, and described annular seal space forms opening in the lower surface of lower house；
Ultrasound wave/mega sonic wave generating mechanism, is located in annular seal space, has gap between its top and sidepiece and annular seal space inwall；
Bottom quartz member, including the ring-type quartz microresonator guard circle of a downwardly open groove of formation, and a upper end
Be connected at bottom portion of groove, lower end is the quartzy microresonator array being made up of multiple vertical bar-shaped quartz construction of free end,
Ultrasound wave/mega sonic wave generating mechanism bottom, its sidepiece and annular seal space position are close in described ring-type quartz microresonator guard circle top
Being tightly connected between the inwall of lower housing section, its groove lower end is stretched out by the opening of lower house lower surface, and described quartz is micro-
The lower surface of resonant cavity array is not higher than the lower surface of groove, has different height between the lower surface of its each bar-shaped quartz construction
Degree；
Wherein, described device connects its spray arm moved of control, the ultrasound wave that described ultrasound wave/mega sonic wave generating mechanism produces
Energy, sequentially passes through ring-type quartz microresonator guard circle, quartz microresonator array conducts downwards, and micro-common through described quartz
Shake after the selective removal of chamber array, by the lower surface of the described bar-shaped quartz construction in figure wafer supernatant wash liquid of submerging
Vertical conduction to figure crystal column surface, drives and cleans medicinal liquid vibration, moves cleaning, meanwhile, at figure carrying out ultrasound wave/mega sonic wave
In shape wafer rotary course, by having each bar-shaped quartz construction of differing heights lower surface, make any position of figure crystal column surface
The region put is all through the cleaning of differing heights quartz microresonator array, so that the ultrasound wave/mega sonic wave of figure crystal column surface
Energy is uniformly distributed, it is achieved in certain scavenging period, makes the arbitrary region in the range of whole figure wafer all obtain uniformly
Cleaning.
The figure wafer not damaged improving the cleaning uniformity the most according to claim 1 cleans device, it is characterised in that also
Including an electric rotating machine connecting spray arm, the rotating shaft of described electric rotating machine connects described device, is used for controlling described device
Horizontal rotation.
The figure wafer not damaged improving the cleaning uniformity the most according to claim 2 cleans device, it is characterised in that institute
The rotating shaft bias stating electric rotating machine connects the top of described device upper shell.
The figure wafer not damaged improving the cleaning uniformity the most according to claim 1 cleans device, it is characterised in that institute
Stating upper shell and be provided with gas access and outlet, its connection is made up of annular seal space inwall and ultrasound wave/mega sonic wave generating mechanism outer wall
Cooling chamber, for being passed through cooling gas by gas access, ultrasound wave/mega sonic wave generating mechanism is cooled down, and by gas
Body outlet is discharged.
The figure wafer not damaged improving the cleaning uniformity the most according to claim 1 cleans device, it is characterised in that institute
Stating the connection of lower house sidepiece and be provided with gas atmosphere inlet and outlet, the outlet of described protective gas is the pore or narrow that a circle has a down dip
Seam, is used as to be passed through protective gas by gas atmosphere inlet, and by protective gas outlet ejection, to be formed at figure crystal column surface
One gas blanket.
The figure wafer not damaged improving the cleaning uniformity the most according to claim 1 cleans device, it is characterised in that institute
Stating upper shell and be provided with gas access, described lower house sidepiece is provided with gas outlet, and described gas outlet is the pore that a circle has a down dip
Or slit, described gas access and outlet by annular seal space inwall and ultrasound wave/mega sonic wave generating mechanism outer wall form cold
But chamber, for being passed through cooling gas by gas access, cools down ultrasound wave/mega sonic wave generating mechanism, and is passing through gas
While body outlet-inclined impeller vane is discharged downwards, form a gas blanket at figure crystal column surface.
The figure wafer not damaged improving the cleaning uniformity the most according to claim 1 cleans device, it is characterised in that institute
The recess sidewall stating ring-type quartz microresonator guard circle is provided with one to some perforates, is used for making cleaning medicinal liquid free in and out quartz
Gap between microresonator array and figure crystal column surface.
The figure wafer not damaged improving the cleaning uniformity the most according to claim 1 cleans device, it is characterised in that institute
The shape stating the quartz bar-shaped quartz construction of microresonator array includes circle, triangle, pentagon or rectangle, each bar-shaped quartz
Structure is according to certain regular distribution, or is distributed according to random fashion.
The figure wafer not damaged improving the cleaning uniformity the most according to claim 1 cleans device, it is characterised in that institute
The lower surface profile stating quartz microresonator array forms sector, triangle, pentagon or strip.
10. the figure wafer not damaged cleaning device of the uniformity is cleaned according to improving described in claim 1-9 any one, its
Being characterised by, described ultrasound wave/mega sonic wave generating mechanism includes piezoelectric and coupling layer, the described coupling being close to arrange up and down
Ring-type quartz microresonator guard circle top is close in layer bottom, and described piezoelectric, coupling layer and ring-type quartz microresonator are protected
Guard ring is compressed by holddown spring set successively between upper shell top and piezoelectric and holddown spring lead；
Described upper shell is equipped with piezoelectric binding post, for external electric signal is directed into piezoelectric, and by connecting coupling layer
Binding post forms loop, to produce ultrasound wave/mega sonic wave oscillation energy.
Priority Applications (6)
| Application Number | Priority Date | Filing Date | Title |
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| CN201610740339.4A CN106328561B (en) | 2016-08-26 | 2016-08-26 | Improve the not damaged cleaning device of figure wafer of the cleaning uniformity |
| TW106100825A TWI600479B (en) | 2016-08-26 | 2017-01-11 | Ultrasonic and megasonic cleaning device |
| US15/663,667 US20180056340A1 (en) | 2016-08-26 | 2017-07-28 | Ultrasonic/megasonic cleaning device |
| SG10201706436XA SG10201706436XA (en) | 2016-08-26 | 2017-08-07 | Ultrasonic/megasonic cleaning device |
| KR1020170107473A KR101940288B1 (en) | 2016-08-26 | 2017-08-24 | Ultrasonic/mega sonic cleaning device |
| US17/020,217 US11554390B2 (en) | 2016-08-26 | 2020-09-14 | Ultrasonic/megasonic cleaning device |
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| CN115971157A (en) * | 2022-12-30 | 2023-04-18 | 江苏中昇电子科技有限公司 | Optical glass surface scrubbing device and working method thereof |
| CN116230594A (en) * | 2023-05-04 | 2023-06-06 | 恒超源洗净科技(深圳)有限公司 | Ultrasonic cleaning device for single wafer |
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Address after: 100015 No. 1 East Jiuxianqiao Road, Beijing, Chaoyang District Patentee after: North China Science and technology group Limited by Share Ltd. Address before: No.1 Jiuxianqiao East Road, Chaoyang District, Beijing 100016 Patentee before: BEIJING SEVENSTAR ELECTRONICS Co.,Ltd. |