CN105034182A - Machining method for ultra-thin sapphire flaky bodies - Google Patents
Machining method for ultra-thin sapphire flaky bodies Download PDFInfo
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- CN105034182A CN105034182A CN201510405475.3A CN201510405475A CN105034182A CN 105034182 A CN105034182 A CN 105034182A CN 201510405475 A CN201510405475 A CN 201510405475A CN 105034182 A CN105034182 A CN 105034182A
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Abstract
The invention discloses a machining method for ultra-thin sapphire flaky bodies. The machining method includes the following steps that 1, sapphire crystal is cut to form ultra-thin sapphire flaky body blanks; 2, the double faces of the ultra-thin sapphire flaky body blanks are roughly grinded to form primary sapphire flaky body semi-finished products; 3, the primary sapphire flaky body semi-finished products are grinded and chemically and mechanically polished to form secondary sapphire flaky body semi-finished products; 4, the secondary sapphire flaky body semi-finished products are ultrasonically washed to form sapphire flaky body finished products. The step 3 includes the substeps that the front face and the back face of a cushion block are waxed, the primary sapphire flaky body semi-finished products are stuck to the front face and the back face respectively, first faces of the primary sapphire flaky body semi-finished products are stuck to the cushion block, and the cushion block is put in grinding equipment to be grinded. As the cushion block is arranged, and the overall thickness of the cushion block and the primary sapphire flaky body semi-finished products is increased, the ultra-thin sapphire flaky body finished products can be obtained through grinding conveniently without abrading a grinding wandering star wheel.
Description
Technical field
The present invention relates to a kind of processing method, particularly relate to a kind of processing method of ultrathin sapphire plates.
Background technology
Sapphire is a kind of monocrystalline of aluminium oxide, is also called corundum, owing to having excellent machinery, optics, chemistry and radiation resistance, is therefore subject to industrial quarters in recent years and applies widely.Because sapphire has very high hardness and anti-wear performance, the therefore bearing material of also Chang Zuowei precision optical machinery.Good radiation resistance again because having, also makes the optical element material that sapphire is often applied to aerospace facility or is exposed in radiation environment.In addition, the baseplate material used when making blue white light LEDs at present is also based on sapphire.In addition, sapphire also will be widely used in the fields such as smart mobile phone display screen, Home key and camera protection cover.
Because the hardness of sapphire material is large, fusing point is high, chemical activity is poor, thus difficulty of processing is large, the especially wafer of large scale and low thinness, as the sapphire material of 4 inches and 6 inches.Existing sapphire plates be generally entirety be directly placed in grinding erratic star wheel grind, if sapphire plates grind excessively thin, grinding erratic star wheel is easily caused to be worn, therefore the sapphire plates that before, traditional sapphire processing technology is produced are thicker, be generally about 300um, and the trend of existing product is all toward frivolous future development, the demand in market can not be met.
Therefore, be necessary to provide a kind of new processing method to solve the problems referred to above.
Summary of the invention
The object of the present invention is to provide and a kind ofly can process the processing method that thinness is the ultrathin sapphire plates of about 150-180um.
To achieve these goals, the technical solution adopted in the present invention is as follows:
A processing method for ultrathin sapphire plates, comprises the following steps:
1) sapphire crystal is cut, form sapphire sheet chaeta base;
2) double-side rough grinding is carried out to described sapphire sheet chaeta base, form elementary sapphire plates semi-finished product;
3) described elementary sapphire plates semi-finished product are ground and chemically mechanical polishing, form secondary sapphire plates semi-finished product;
4) mega sonic wave cleaning is carried out to described secondary sapphire plates semi-finished product, form sapphire plates finished product;
Described step 3) comprises: wax respectively at the obverse and reverse of cushion block, be stained with described elementary sapphire plates semi-finished product more respectively, half-finished first face of described elementary sapphire plates is bonding with described cushion block, second face is back to described cushion block, the half-finished cushion block of described elementary sapphire plates will be stained with put on grinding erratic star wheel, and grinding erratic star wheel be placed in milling apparatus and grind.
Preferably, described sapphire plates comprise optical window sheets, sapphire village egative film, mobile phone camera over cap, smart mobile phone display screen and have the Home key of fingerprint identification function.
Preferably, in described step 3), first two half-finished second faces of described elementary sapphire plates are ground, then described elementary sapphire plates semi-finished product are taken off, clean half-finished first face of described elementary sapphire plates, again the positive and negative of described cushion block is waxed, half-finished for described elementary sapphire plates second face is bonded on described cushion block, half-finished first face of described elementary sapphire plates is ground, finally chemical mechanical polish process is carried out to described elementary sapphire plates semi-finished product, form described secondary sapphire plates semi-finished product.
Preferably, in described step 3), first successively half-finished second face of described elementary sapphire plates is ground and chemical mechanical polish process, take off described elementary sapphire plates semi-finished product again, clean half-finished first face of described elementary sapphire plates, again cushion block positive and negative is waxed, half-finished for described elementary sapphire plates second face is bonded on described cushion block, finally successively half-finished first face of described elementary sapphire plates is ground and chemical mechanical polish process, form described secondary sapphire plates semi-finished product.
Preferably, described step 1) comprise the following steps: multi-line cutting machine, line of cut and cutting liquid are provided, select suitable crystal bar, cut brilliant neck, crystal bar is fixed on and rotates on clamping device, the described multi-line cutting machine moved up and down is utilized to cut, the platform speed of the diamond wire that described multi-line cutting machine adopts the guide wheel of 0.8-1.5mm slot pitch, diameter is 250um, 0.2mm/min and the linear speed of 500m/min, crystal bar is cut into slices, obtains some described sapphire sheet chaeta bases being of a size of 4-6 inch.
Preferably, the weight percentage of each component of described cutting liquid is: polyethylene glycol 34%, glycerine block polyether 15%, triethanolamine oleate 14%, methyl benzotriazazole 7%, polysiloxane defoamers 0.1%, and surplus is water.
Preferably, described step 2) comprise the following steps: adopt double-side rough grinding machine, with boron carbide lapping liquid, described sapphire sheet chaeta base is roughly ground.
Preferably, described step 2) and step 3) between be also provided with chamfering process, described chamfering process comprises: be placed on CNC board fixture by described elementary sapphire plates semi-finished product, choose 800-1000 order, 45 ° of diamond chamfering bistriques, setting speed is 700r/min, and the amount of feeding is 0.02-0.05mm/min, and chamfering amount is 0.1mm, the chamfering time is 7 minutes, makes described secondary sapphire plates semi-finished product.
Compared with prior art, the beneficial effect of the processing method of the ultrathin sapphire plates of the present invention is: the present invention arranges described cushion block, add described cushion block and the half-finished integral thickness of described elementary sapphire plates, be convenient to grind out thinner large-size sapphire plates finished product, and the described grinding erratic star wheel that can not wear and tear, finished product thickness is 150-180um, and thickness reduces greatly.
Accompanying drawing explanation
Fig. 1 is the steps flow chart schematic diagram of a preferred embodiment of the present invention;
Fig. 2 is the structural representation of grinding erratic star wheel of the present invention;
Fig. 3 is the structural representation of elementary sapphire plates semi-finished product of the present invention and described cushion block.
In figure, each mark is as follows: 1, elementary sapphire plates semi-finished product; 2, cushion block; 3, erratic star wheel is ground; 4, the hole being stained with semi-finished product cushion block is placed.
Detailed description of the invention
Below in conjunction with specific embodiment, the present invention is described further.
Refer to shown in Fig. 1 to Fig. 3, the processing method of the ultrathin sapphire plates of the present invention comprises the following steps:
1) sapphire crystal is cut, form sapphire sheet chaeta base; Specifically comprise the following steps: multi-line cutting machine, line of cut and cutting liquid are provided, select suitable crystal bar, cut brilliant neck, crystal bar is fixed on and rotates on clamping device, the described multi-line cutting machine moved up and down is utilized to cut, the platform speed of the diamond wire that described multi-line cutting machine adopts the guide wheel of 0.8-1.5mm slot pitch, diameter is 250um, 0.2mm/min and the linear speed of 500m/min, cut into slices to crystal bar, obtain some described sapphire sheet chaeta bases being of a size of 4-6 inch; The weight percentage of each component of described cutting liquid is: polyethylene glycol 34%, glycerine block polyether 15%, triethanolamine oleate 14%, methyl benzotriazazole 7%, polysiloxane defoamers 0.1%, and surplus is water.
2) double-side rough grinding is carried out to described sapphire sheet chaeta base, form elementary sapphire plates semi-finished product 1; Specifically comprise the following steps: adopt double-side rough grinding machine, with boron carbide lapping liquid, described sapphire sheet chaeta base is roughly ground.
3) chamfering process, specifically comprise the following steps: described elementary sapphire plates semi-finished product 1 are placed on CNC board fixture, choose 800-1000 order, 45 ° of diamond chamfering bistriques, setting speed is 700r/min, the amount of feeding is 0.02-0.05mm/min, chamfering amount is 0.1mm, and the chamfering time is 7 minutes.
4) described elementary sapphire plates semi-finished product 1 are ground and chemically mechanical polishing, form secondary sapphire plates semi-finished product, wax respectively at the obverse and reverse of cushion block 2, be stained with described elementary sapphire plates semi-finished product 1 more respectively, first face of described elementary sapphire plates semi-finished product 1 is bonding with described cushion block 2, second face is back to described cushion block 2, the cushion block 2 being stained with described elementary sapphire plates semi-finished product 1 is put on grinding erratic star wheel 3, grinding erratic star wheel 3 is placed in milling apparatus grind, grinding steps comprises following two kinds of embodiments:
Scheme one: first second face of two described elementary sapphire plates semi-finished product 1 is ground, then described elementary sapphire plates semi-finished product 1 are taken off, clean first face of described elementary sapphire plates semi-finished product 1, again the positive and negative of described cushion block 2 is waxed, second face of described elementary sapphire plates semi-finished product 1 is bonded on described cushion block 2, first face of described elementary sapphire plates semi-finished product 1 is ground, finally chemical mechanical polish process is carried out to described elementary sapphire plates semi-finished product 1, form described secondary sapphire plates semi-finished product.
Scheme two: first successively second face of described elementary sapphire plates semi-finished product 1 is ground and chemical mechanical polish process, take off described elementary sapphire plates semi-finished product 1 again, clean first face of described elementary sapphire plates semi-finished product 1, again cushion block 2 positive and negative is waxed, second face of described elementary sapphire plates semi-finished product 1 is bonded on described cushion block 2, finally successively first face of described elementary sapphire plates semi-finished product 1 is ground and chemical mechanical polish process, form described secondary sapphire plates semi-finished product.
Wherein said chemical mechanical polish process comprises two kinds of polishing modes: the first polishing mode adopts single side polishing machine to carry out polishing to first face of described elementary sapphire plates semi-finished product 1 and second face successively respectively.The second polishing mode adopts Twp-sided polishing machine to carry out polishing to first face of described elementary sapphire plates semi-finished product 1 and second face simultaneously.
5) mega sonic wave cleaning is carried out to described secondary sapphire plates semi-finished product, form sapphire plates finished product, specifically comprise the following steps: prepare cleaning No. 1 liquid and No. 2 liquid, the component of No. 1 liquid comprises: NH4OH, H2O2, H2O, and the component of No. 2 liquid comprises: HCl, H2O2, H2O; First the sapphire plates finished product in step 7 is cleaned 15 minutes with mega sonic wave cleaning machine in the trichloroethanes of 50 DEG C-60 DEG C, after in the acetone of 20 DEG C-25 DEG C clean 2 minutes, 2 minutes are cleaned afterwards with deionized water stream, after in No. 2 liquid of 80 DEG C-90 DEG C, mega sonic wave cleans 10 minutes, and rear deionized water stream cleans 2 minutes, after in No. 1 liquid of 90 DEG C-95 DEG C, mega sonic wave cleans 10 minutes, finally cleans 5 minutes with deionized water stream and dries sapphire plates finished product;
6) Surface testing, carries out Surface testing to the sapphire plates finished product after step 5 processes, confirms without defect ware;
7) ultra-clean encapsulation;
8) final finished.
The present invention in the specific implementation; be not limited to and make optical window sheets and sapphire village egative film; can also be used for making other thinner sheet products, comprise the coverlens(over cap of camera in IPhone), there is in IPad the home key and smart mobile phone display screen etc. of fingerprint identification function.
Schematically above be described the present invention and embodiment thereof, this description does not have restricted, and also just one of the embodiments of the present invention shown in accompanying drawing, actual structure is not limited thereto.So, if those of ordinary skill in the art enlightens by it, when not departing from the invention aim, designing the frame mode similar to this technical scheme and embodiment without creationary, all should protection scope of the present invention be belonged to.
Claims (8)
1. a processing method for ultrathin sapphire plates, comprises the following steps:
1) sapphire crystal is cut, form sapphire sheet chaeta base;
2) double-side rough grinding is carried out to described sapphire sheet chaeta base, form elementary sapphire plates semi-finished product;
3) described elementary sapphire plates semi-finished product are ground and chemically mechanical polishing, form secondary sapphire plates semi-finished product;
4) mega sonic wave cleaning is carried out to described secondary sapphire plates semi-finished product, form sapphire plates finished product;
It is characterized in that, described step 3) comprises: wax respectively at the obverse and reverse of cushion block, be stained with described elementary sapphire plates semi-finished product more respectively, half-finished first face of described elementary sapphire plates is bonding with described cushion block, second face is back to described cushion block, the half-finished cushion block of described elementary sapphire plates will be stained with put on grinding erratic star wheel, and grinding erratic star wheel be placed in milling apparatus and grind.
2. the processing method of ultrathin sapphire plates as claimed in claim 1; it is characterized in that, described sapphire plates comprise optical window sheets, sapphire village egative film, mobile phone camera over cap, smart mobile phone display screen and have the Home key of fingerprint identification function.
3. the processing method of ultrathin sapphire plates as claimed in claim 1, it is characterized in that, in described step 3), first two half-finished second faces of described elementary sapphire plates are ground, then described elementary sapphire plates semi-finished product are taken off, clean half-finished first face of described elementary sapphire plates, again the positive and negative of described cushion block is waxed, half-finished for described elementary sapphire plates second face is bonded on described cushion block, half-finished first face of described elementary sapphire plates is ground, finally chemical mechanical polish process is carried out to described elementary sapphire plates semi-finished product, form described secondary sapphire plates semi-finished product.
4. the processing method of ultrathin sapphire plates as claimed in claim 1, it is characterized in that, in described step 3), first successively half-finished second face of described elementary sapphire plates is ground and chemical mechanical polish process, take off described elementary sapphire plates semi-finished product again, clean half-finished first face of described elementary sapphire plates, again cushion block positive and negative is waxed, half-finished for described elementary sapphire plates second face is bonded on described cushion block, finally successively half-finished first face of described elementary sapphire plates is ground and chemical mechanical polish process, form described secondary sapphire plates semi-finished product.
5. the processing method of ultrathin sapphire plates as claimed in claim 1, it is characterized in that, described step 1) comprise the following steps: multi-line cutting machine is provided, line of cut and cutting liquid, select suitable crystal bar, cut brilliant neck, crystal bar is fixed on and rotates on clamping device, the described multi-line cutting machine moved up and down is utilized to cut, described multi-line cutting machine adopts the guide wheel of 0.8-1.5mm slot pitch, diameter is the diamond wire of 250um, the platform speed of 0.2mm/min and the linear speed of 500m/min, crystal bar is cut into slices, obtain some described sapphire sheet chaeta bases being of a size of 4-6 inch.
6. the processing method of ultrathin sapphire plates as claimed in claim 5, it is characterized in that, the weight percentage of each component of described cutting liquid is: polyethylene glycol 34%, glycerine block polyether 15%, triethanolamine oleate 14%, methyl benzotriazazole 7%, polysiloxane defoamers 0.1%, surplus is water.
7. the processing method of ultrathin sapphire plates as claimed in claim 1, is characterized in that, described step 2) comprise the following steps: adopt double-side rough grinding machine, with boron carbide lapping liquid, described sapphire sheet chaeta base is roughly ground.
8. the processing method of ultrathin sapphire plates as claimed in claim 1, it is characterized in that, described step 2) and step 3) between be also provided with chamfering process, described chamfering process comprises: be placed on CNC board fixture by described elementary sapphire plates semi-finished product, choose 800-1000 order, 45 ° of diamond chamfering bistriques, setting speed is 700r/min, the amount of feeding is 0.02-0.05mm/min, chamfering amount is 0.1mm, the chamfering time is 7 minutes, makes described secondary sapphire plates semi-finished product.
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Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN105436138A (en) * | 2015-11-18 | 2016-03-30 | 无锡科诺达电子有限公司 | Sapphire cleaning device |
| CN105538105A (en) * | 2015-11-30 | 2016-05-04 | 东莞酷派软件技术有限公司 | Method of polishing by using numerical control machine tool |
| CN106078493A (en) * | 2016-06-23 | 2016-11-09 | 上海汉虹精密机械有限公司 | The method of ceramic disk grinding wheel twin grinding processing sapphire wafer |
| CN106181747A (en) * | 2016-06-13 | 2016-12-07 | 江苏吉星新材料有限公司 | A kind of large-size sapphire ultrathin double-face polishing diaphragm processing method |
| CN106378874A (en) * | 2016-11-03 | 2017-02-08 | 福建福晶科技股份有限公司 | Processing method for round diaphragms |
| CN109290853A (en) * | 2017-07-24 | 2019-02-01 | 蓝思科技（长沙）有限公司 | A kind of preparation method of ultra-thin sapphire sheet |
| CN110576343A (en) * | 2018-08-01 | 2019-12-17 | 蓝思科技（长沙）有限公司 | optical glass processing technology, optical glass sheet and equipment |
| CN110625835A (en) * | 2019-09-12 | 2019-12-31 | 西安奕斯伟硅片技术有限公司 | Silicon wafer forming processing method |
| CN111515792A (en) * | 2020-04-28 | 2020-08-11 | 福建晶安光电有限公司 | Substrate material suitable for graphene growth and manufacturing method thereof |
| CN115106869A (en) * | 2022-06-24 | 2022-09-27 | 合肥先端晶体科技有限责任公司 | Device and method for preparing sheet diamond |
| CN115338694A (en) * | 2022-07-01 | 2022-11-15 | 金华博蓝特新材料有限公司 | Processing method of double-side polished wafer |
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Cited By (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105436138A (en) * | 2015-11-18 | 2016-03-30 | 无锡科诺达电子有限公司 | Sapphire cleaning device |
| CN105538105A (en) * | 2015-11-30 | 2016-05-04 | 东莞酷派软件技术有限公司 | Method of polishing by using numerical control machine tool |
| CN106181747A (en) * | 2016-06-13 | 2016-12-07 | 江苏吉星新材料有限公司 | A kind of large-size sapphire ultrathin double-face polishing diaphragm processing method |
| CN106181747B (en) * | 2016-06-13 | 2018-09-04 | 江苏吉星新材料有限公司 | A kind of large-size sapphire ultrathin double-face polishing window slice processing method |
| CN106078493A (en) * | 2016-06-23 | 2016-11-09 | 上海汉虹精密机械有限公司 | The method of ceramic disk grinding wheel twin grinding processing sapphire wafer |
| CN106378874A (en) * | 2016-11-03 | 2017-02-08 | 福建福晶科技股份有限公司 | Processing method for round diaphragms |
| CN109290853A (en) * | 2017-07-24 | 2019-02-01 | 蓝思科技（长沙）有限公司 | A kind of preparation method of ultra-thin sapphire sheet |
| CN109290853B (en) * | 2017-07-24 | 2021-06-04 | 蓝思科技（长沙）有限公司 | Preparation method of ultrathin sapphire sheet |
| CN110576343A (en) * | 2018-08-01 | 2019-12-17 | 蓝思科技（长沙）有限公司 | optical glass processing technology, optical glass sheet and equipment |
| CN110576343B (en) * | 2018-08-01 | 2021-02-02 | 蓝思科技（长沙）有限公司 | Optical glass processing technology, optical glass sheet and equipment |
| CN110625835A (en) * | 2019-09-12 | 2019-12-31 | 西安奕斯伟硅片技术有限公司 | Silicon wafer forming processing method |
| CN111515792A (en) * | 2020-04-28 | 2020-08-11 | 福建晶安光电有限公司 | Substrate material suitable for graphene growth and manufacturing method thereof |
| CN115106869A (en) * | 2022-06-24 | 2022-09-27 | 合肥先端晶体科技有限责任公司 | Device and method for preparing sheet diamond |
| CN115338694A (en) * | 2022-07-01 | 2022-11-15 | 金华博蓝特新材料有限公司 | Processing method of double-side polished wafer |
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