CN103372809A - Method for improving silicon block ground surface quality - Google Patents

Method for improving silicon block ground surface quality Download PDF

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Publication number
CN103372809A
CN103372809A CN2012101072722A CN201210107272A CN103372809A CN 103372809 A CN103372809 A CN 103372809A CN 2012101072722 A CN2012101072722 A CN 2012101072722A CN 201210107272 A CN201210107272 A CN 201210107272A CN 103372809 A CN103372809 A CN 103372809A
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CN
China
Prior art keywords
silico briquette
flour milling
improving
grinding
oxidizing solution
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN2012101072722A
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Chinese (zh)
Inventor
谭永峰
张存新
章金兵
张细根
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LDK Solar Co Ltd
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LDK Solar Co Ltd
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Publication date
Application filed by LDK Solar Co Ltd filed Critical LDK Solar Co Ltd
Priority to CN2012101072722A priority Critical patent/CN103372809A/en
Publication of CN103372809A publication Critical patent/CN103372809A/en
Pending legal-status Critical Current

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Abstract

The invention discloses a method for improving silicon block ground surface quality. The method includes: (1) preparing an oxidizing solution; and (2) spraying the oxidizing solution on a ground surface of a to-be-ground silicon block and performing grinding. By the method, mechanical damage caused in the grinding process of the silicon block can be reduced, quality of the ground surface of the silicon block is improved, an excellent ground surface effect is obtained, and loss of a grinding head in the grinding process is reduced.

Description

A kind of method of improving silico briquette flour milling quality
Technical field
The present invention relates to the silico briquette manufacture field, relate in particular to a kind of method of improving silico briquette flour milling quality.
Background technology
At present, in photovoltaic industry, the silicon crystal bar warp cuts Fang Houxu to carry out surperficial flour milling and processes (correction size) and carry out slicing process again.When the gained silico briquette ground behind the scroll saw evolution, what generally adopt was the emery wheel grinding-head (spray running water when grinding silico briquette and play wetting, cooling and removal of impurities effect) of diamond or boron nitride superhard material.In this case, the wheel grinding silico briquette is that the rotation by emery wheel grinding-head comes grinding silico briquette surface, it is pure mechanical grinding, emery wheel can produce surface pressing and internal stress to silico briquette during flour milling, cause the silico briquette surface damage layer to enlarge to be crackle and extend inward, yet the hardness of silicon is very high and easily crisp, produce mechanical damage layer on the silico briquette surface easily after namely grinding, and then just can produce defectives such as collapsing limit, edge, hidden sliver, silico briquette after the grinding easily causes the generation of edge piece after section, simultaneously, bistrique also is vulnerable to loss during grinding.
Summary of the invention
Embodiment of the invention technical problem to be solved is, a kind of method of improving silico briquette flour milling quality is provided, and can reduce the mechanical damage that silico briquette causes in process of lapping, obtains good flour milling effect, reduces simultaneously the loss of bistrique in grinding process.
In order to solve the problems of the technologies described above, the embodiment of the invention provides a kind of method of improving silico briquette flour milling quality, may further comprise the steps:
(1) preparation oxidizing solution;
(2) flour milling at silico briquette to be ground sprays oxidizing solution described in (1), grinds.
Oxidizing solution described in the step (1) refers to silica to be changed into the oxidizing solution of silica.
Preferably, oxidizing solution is hydrogen peroxide solution and/or the tincture of iodine.
Preferably, the concentration of oxidizing solution is any percent concentration.More preferably, the concentration of described oxidizing solution is 2%~25%.And most preferably, the concentration of described oxidizing solution is 3%~15%.
Because oxidizing solution has certain oxidisability, when flour milling, spray oxidizing solution, under the hot environment that in process of lapping, produces, the silico briquette surface will be oxidized to silica that hardness and brittleness all be much smaller than silicon (in process of lapping, the silica that generates is disappeared by mill), so just emery wheel is changed into chemical reaction, mechanical grinding double action to the pure mechanical grinding effect of silicon.So, just can reduce the silico briquette flour milling and add the damage that produces man-hour, and suppress to collapse the defectives such as limit, edge, hidden sliver and extend inward, reduce simultaneously the silico briquette surface roughness, can also effectively reduce producing edge piece in the slicing process.
Preferably, the described oxidizing solution former container for the supply running water on the flour milling machine of packing into, and arrive the work you of described flour milling machine by the pipeline supply of described flour milling machine.
Preferably, described oxidizing solution by the container of packing into after, be fed to again the work you of flour milling machine with pump.Described container is for storing homemade container or the commercially available container of described oxidizing solution.
Preferably, described grinding comprises corase grind and finish grindes two stages.
More preferably, described corase grind adopts emery wheel grinding-head.And most preferably, described emery wheel grinding-head adopts diamond or boron nitride superhard material to make.
More preferably, described correct grinding adopts hairbrush bistrique or emery wheel grinding-head.
Implement the embodiment of the invention, have following beneficial effect:
(1) by in the silico briquette process of lapping, spraying oxidizing solution, introduces chemical action, reduced the mechanical damage that when grinding the silico briquette surface is caused, reduced the silico briquette surface roughness, improved the flour milling quality of silico briquette;
(2) edge piece that has reduced after the silico briquette section produces ratio;
(3) reduced the loss of bistrique in process of lapping.
Description of drawings
Fig. 1 is the silico briquette surface topography map that sprays in the embodiment of the invention one after 3% hydrogen peroxide solution grinds;
Fig. 2 is the silico briquette surface topography map that sprays in the embodiment of the invention one after running water grinds.
The specific embodiment
Below in conjunction with the accompanying drawing in the embodiment of the invention, the technical scheme in the embodiment of the invention is clearly and completely described, obviously, described embodiment only is the present invention's part embodiment, rather than whole embodiment.Based on the embodiment among the present invention, those of ordinary skills belong to the scope of protection of the invention not making the every other embodiment that obtains under the creative work prerequisite.
Embodiment one
A kind of method of improving silico briquette flour milling quality may further comprise the steps:
(1) preparing mass percent concentration is 3% hydrogen peroxide solution;
(2) optional silico briquette places the corase grind work you on the machine flour milling machine on the Wuxi with silico briquette, sprays 3% the hydrogen peroxide solution for preparing in the step (1) at wherein two faces of silico briquette, with emery wheel grinding-head silico briquette is roughly ground;
(3) silico briquette through corase grind in the step (2) is placed the correct grinding work you on the machine flour milling machine on the Wuxi, spray 3% the hydrogen peroxide solution for preparing in the step (1) at two faces, with the hairbrush bistrique silico briquette is finish grinded.
In the present embodiment, the described hydrogen peroxide solution former container for the supply running water on the described flour milling machine of packing into, and arrive the work you of described flour milling machine by the pipeline supply of described flour milling machine.When silico briquette to be ground placed the corase grind work you of flour milling machine or correct grinding work you to grind, flour milling machine assisted silico briquette to grind automatic continuous sprinkling hydrogen peroxide solution.
Certainly, in other embodiments, described hydrogen peroxide solution also can be fed to the work you of described flour milling machine again by behind the homemade container of packing into pump, also belong to protection scope of the present invention.When silico briquette to be ground places the corase grind work you of flour milling machine or correct grinding work you to grind, by pump the hydrogen peroxide solution in container made is fed to the work you of flour milling machine, spray, assist silico briquette to grind.
Wherein, silico briquette to be ground is by the correct grinding work you of the corase grind work you in the step (2) in the step (3), transmits by machine automatization and realizes.
In order to prove better beneficial effect of the present invention, following contrast experiment is set:
Get above-mentioned same silico briquette, silico briquette is placed on the Wuxi on the machine flour milling machine, in addition two faces of silico briquette are ground, when roughly grinding and finish grind, spray running water.
Get in above-mentioned two groups of experiments through corase grind and finish grind two silico briquettes that grind after links are processed, measure respectively two faces that spray running water when silico briquette grinds and spray the surface topography of two faces of 3% hydrogen peroxide solution.Measurement result as depicted in figs. 1 and 2, Fig. 1 is the silico briquette surface topography map that sprays after 3% hydrogen peroxide solution grinds, Fig. 2 is the silico briquette surface topography map that sprays after running water grinds.Can find out from Fig. 1 and Fig. 2, compare with the silico briquette surface topography that sprays among Fig. 2 after running water grinds, the silico briquette surface after the hydrogen peroxide solution of sprinkling 3% grinds among Fig. 1, its roughness obviously reduces.Concrete measurement result shows, compares with two faces of silico briquette that spray after running water grinds, and two faces silico briquette surface roughness Ra after grinding of the hydrogen peroxide solution of sprinkling 3% has reduced by 21%, Ry and reduced by 34%.
Embodiment two
A kind of method of improving silico briquette flour milling quality is compared with embodiment one, and the difference of present embodiment only is, described mass percent concentration is that to be replaced with mass percent concentration be 3% iodine solution for 3% hydrogen peroxide solution.After silico briquette grinds, after measured, compare with two faces of silico briquette that spray after running water grinds, two faces silico briquette surface roughness Ra after grinding of the iodine solution of sprinkling 3% has reduced by 21%, Ry and has reduced by 34%.
Embodiment three
A kind of method of improving silico briquette flour milling quality is compared with embodiment one, and the difference of present embodiment only is that the mass percent concentration of described hydrogen peroxide solution is different, and in the present embodiment, the mass percent concentration of described hydrogen peroxide is 10%.After measured, compare with two faces of silico briquette that spray after running water grinds, two faces silico briquette surface roughness Ra after grinding of the hydrogen peroxide solution of sprinkling 10% has reduced by 23%, Ry and has reduced by 37%.
Can find out from experimental result, when increasing the mass percent concentration of hydrogen peroxide, be polished the surface roughness of silico briquette after grinding and decrease, but reduce not obvious, the hydrogen peroxide solution that high concentration is described can better improve the silico briquette surface topography after the grinding, but effect is not remarkable.Reason may be that the surface roughness of silico briquette has certain limiting value.Therefore, for fear of unnecessary waste, should select the hydrogen peroxide solution concentration that is fit to during grinding.
Embodiment four
Optional two silico briquettes, one of them silico briquette spray running water when the machine flour milling machine is roughly ground and finish grinded on the Wuxi, and another silico briquette sprays 3% hydrogen peroxide solution when roughly grinding and finish grind.
Silico briquette after two grindings is cut into slices, and the result shows that the silico briquette of the hydrogen peroxide solution of sprinkling 3% is compared with the silico briquette that sprays running water after the section, and the generation ratio of edge piece has reduced by 49.3%.The silico briquette of 3% hydrogen peroxide solution is sprayed in thus explanation during grinding, the degree of its mechanical damage has obviously reduced, and then so that the edge piece ratio that section produces also obviously reduced.
The above is preferred embodiment of the present invention; should be pointed out that for those skilled in the art, under the prerequisite that does not break away from the principle of the invention; can also make some improvements and modifications, these improvements and modifications also are considered as protection scope of the present invention.

Claims (9)

1. a method of improving silico briquette flour milling quality is characterized in that, may further comprise the steps:
(1) preparation oxidizing solution;
(2) flour milling at silico briquette to be ground sprays oxidizing solution described in (1), grinds.
2. the method for improving silico briquette flour milling quality as claimed in claim 1 is characterized in that, oxidizing solution is hydrogen peroxide solution and/or the tincture of iodine described in the step (1).
3. the method for improving silico briquette flour milling quality as claimed in claim 1 is characterized in that, described oxidizing solution is any mass percent concentration.
4. the method for improving silico briquette flour milling quality as claimed in claim 3 is characterized in that, the mass percent concentration of described oxidizing solution is 2%~25%.
5. the method for improving silico briquette flour milling quality as claimed in claim 1 is characterized in that, grinding described in the step (2) comprises corase grind and finish grindes two stages.
6. the method for improving silico briquette flour milling quality as claimed in claim 5 is characterized in that, described corase grind adopts emery wheel grinding-head.
7. the method for improving silico briquette flour milling quality as claimed in claim 5 is characterized in that, described correct grinding adopts hairbrush bistrique or emery wheel grinding-head.
8. such as each described method of improving silico briquette flour milling quality of claim 1~4, it is characterized in that, the described oxidizing solution former container for the supply running water on the flour milling machine of packing into, and arrive the work you of described flour milling machine by the pipeline supply of described flour milling machine.
9. such as each described method of improving silico briquette flour milling quality of claim 1~4, it is characterized in that, described oxidizing solution by the container of packing into after, be fed to again the work you of flour milling machine with pump.
CN2012101072722A 2012-04-12 2012-04-12 Method for improving silicon block ground surface quality Pending CN103372809A (en)

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CN2012101072722A CN103372809A (en) 2012-04-12 2012-04-12 Method for improving silicon block ground surface quality

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Application Number Priority Date Filing Date Title
CN2012101072722A CN103372809A (en) 2012-04-12 2012-04-12 Method for improving silicon block ground surface quality

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CN103372809A true CN103372809A (en) 2013-10-30

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Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1314444A (en) * 2000-03-21 2001-09-26 普拉塞尔.S.T.技术有限公司 Mixed polishing paste
JP2002294225A (en) * 2001-03-29 2002-10-09 Fujimi Inc Polishing composition and manufacturing method of memory hard disk using the same
US6866560B1 (en) * 2003-01-09 2005-03-15 Sandia Corporation Method for thinning specimen
US20060258276A1 (en) * 2005-05-16 2006-11-16 Chien-Min Sung Superhard cutters and associated methods
CN201239917Y (en) * 2008-05-30 2009-05-20 青岛理工大学 Polishing device of grinder
CN102101263A (en) * 2009-12-18 2011-06-22 安集微电子(上海)有限公司 Chemically mechanical polishing method
CN102107391A (en) * 2009-12-24 2011-06-29 北京天科合达蓝光半导体有限公司 Method for processing monocrystal silicon carbide wafer

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1314444A (en) * 2000-03-21 2001-09-26 普拉塞尔.S.T.技术有限公司 Mixed polishing paste
JP2002294225A (en) * 2001-03-29 2002-10-09 Fujimi Inc Polishing composition and manufacturing method of memory hard disk using the same
US6866560B1 (en) * 2003-01-09 2005-03-15 Sandia Corporation Method for thinning specimen
US20060258276A1 (en) * 2005-05-16 2006-11-16 Chien-Min Sung Superhard cutters and associated methods
CN201239917Y (en) * 2008-05-30 2009-05-20 青岛理工大学 Polishing device of grinder
CN102101263A (en) * 2009-12-18 2011-06-22 安集微电子(上海)有限公司 Chemically mechanical polishing method
CN102107391A (en) * 2009-12-24 2011-06-29 北京天科合达蓝光半导体有限公司 Method for processing monocrystal silicon carbide wafer

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Application publication date: 20131030