CN102101263A - Chemically mechanical polishing method - Google Patents
Chemically mechanical polishing method Download PDFInfo
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- CN102101263A CN102101263A CN2009102013791A CN200910201379A CN102101263A CN 102101263 A CN102101263 A CN 102101263A CN 2009102013791 A CN2009102013791 A CN 2009102013791A CN 200910201379 A CN200910201379 A CN 200910201379A CN 102101263 A CN102101263 A CN 102101263A
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Abstract
The invention discloses a novel chemically mechanical polishing method applied in a TSV (through silicon vias) intercommunication technology. In the method, chemically mechanical polishing is carried out by utilizing a polishing pad for fixing grinded particles. The method has the advantages of improving the polishing speed, increasing the yield and improving the wafer flatness.
Description
Technical field
The present invention relates to a kind of cmp method, relate in particular to a kind of cmp method that is applied in the through-silicon-via interconnection technique (TSV).
Background technology
Chemically mechanical polishing is widely used in integrated circuit fabrication process.Can be divided into chemical mechanical polishing of metals and nonmetal chemical machine glazed finish according to polishing material difference, its typical cmp method is: polished base material directly contacts with rotating polishing pad, and carrier is exerted pressure at the dorsal part of board; In polishing process, keep grinding pad and grinding head under certain speed, to rotate, and continually apply the certain grinding rate of maintenance on the ground slurry that contains abrasive grains and the polishing pad.This chemical polishing technology can obtain the degree of polished surface wafer leveling preferably, lower defective and corrosion.But the common grinding rate of this glossing is difficult to satisfy the requirement of penetrated through via holes interconnection technique less than 1 micron per minute.
Require differently with typical CMP process, what the TSV Technology Need ground away several microns even hundreds of micron in the short period of time is ground base material, and reaches good wafer surface flatness and low ratio of defects.
Patent US2009061630A1 has announced a kind of cmp method of metal base, and its chemical grinding slurry that will contain abrasive grains is applied on the grinding pad and grinds, but its copper grinding rate is less than 5000 dust per minutes.
Patent CN98120987.4 has announced a kind of method that is used for chemically mechanical polishing (CMP) slurries of copper and is used for the integrated circuit manufacturing, and its chemical polishing slurry that will contain abrasive grains is applied on the grinding pad and polishes.It declares that grinding rate is improved, but the copper grinding rate is only greater than 5000 dust per minutes.
Patent US2008274618A1 has announced a kind of polysilicon grinding composition, and it adopts the chemical grinding slurry that contains ceria that polysilicon is ground, but its grinding rate is lower than 1 micron per minute.
Therefore, need a kind ofly can solve wafer thinning and the high polishing speed requirement of copper connecting lines polishing process in the TSV technology, and can reach good wafer leveling degree and low ratio of defects, make it reach the cmp method of the requirement of industrialization.
Summary of the invention
It is relatively poor and production capacity is low that the high polishing speed that the purpose of this invention is to provide wafer thinning in a kind of TSV of solution technology and copper connecting lines polishing process requires, polishes back wafer leveling degree, and can reach good wafer leveling degree and low ratio of defects, reach the cmp method of the requirement of industrialization.
The objective of the invention is to be achieved through the following technical solutions:
In the TSV CMP process, introduce the fixedly traditional typical grinding pad of grinding pad replacement of abrasive grains, reach high grinding rate and wafer leveling degree.This invention divides following several steps to carry out:
(1) adopting fixedly, the main quilt of grinding pad polishing of abrasive grains grinds base material;
(2) adopting fixedly, the grinding pad polishing residue quilt of abrasive grains grinds base material; Perhaps adopt typical cmp method polishing remaining by the grinding base material.
In technical scheme of the present invention, described grinding-material comprises silicon, copper, tantalum, tantalum nitride.
In technical scheme of the present invention, described fixedly abrasive grains comprises one or more in silica, cerium oxide, aluminium oxide, the diamond.
In technical scheme of the present invention, described TSV CMP process also comprises use skive grinding technics.
In technical scheme of the present invention, the described skive grinding technics that uses is silicon substrate by grinding-material.
The specific embodiment
Further specify the present invention below by the specific embodiment.Silicon, copper, tantalum or tantalum nitride are polished in TSV technology with method of the present invention.Following table is an example with three step glossings commonly used, adopts diverse ways to be polished grinding base material respectively, thereby reaches the polishing requirement.
Embodiment 1～13
Table 1, embodiment 1～13
| Embodiment | The first step | Second step | The 3rd step |
| 1 | Employing water is lapping liquid, uses the diamond lap pad to remove mainly and is ground base material | The lapping liquid that employing is made up of 1.05% TMAH, 93.95% water and 5% glycerine uses the diamond lap pad to remove residue and is ground base material | |
| 2 | The lapping liquid that employing is made up of 1.05% TMAH and 98.95% water uses the diamond lap pad to remove mainly and is ground base material | The lapping liquid that employing is made up of 1.05% TMAH and 98.95% water uses the diamond lap pad to remove part and is ground base material | Employing is by 2% silica abrasive grains, 94.35% water, 3% glycerine, 0.05% BTA, 0.1%2-phosphonic acid butane-1,2, the lapping liquid that 4-tricarboxylic acids and 0.5% hydrogen peroxide are formed uses typical grinding pad to remove residue by grinding-material |
| 3 | The lapping liquid that employing is made up of 1.05% TMAH, 93.95% water and 5% glycerine uses the diamond lap pad to remove mainly and is ground base material silicon | The lapping liquid that employing is made up of 1.05% TMAH, 93.95% water, 3% glycerine and 2% monoethanolamine uses the silicon oxide particle grinding pad to remove residue and is ground base material |
| 4 | The lapping liquid that employing is made up of 1.05% TMAH, 93.95% water, 3% glycerine and 2% monoethanolamine uses the diamond lap pad to remove mainly and is ground base material | The lapping liquid that employing is made up of 1.5% citric acid, 94.5% water, 3% glycerine and 1% monoethanolamine uses the cerium oxide particle grinding pad to remove residue and is ground base material | |
| 5 | The lapping liquid that employing is made up of 1.05% TMAH, 93.95% water, 3% glycerine and 2% monoethanolamine uses the alumina lap pad to remove mainly and is ground base material | The lapping liquid that employing is made up of 0.5% TMAH, 94.5% water and 5% glycerine uses the silicon oxide particle grinding pad to remove part and is ground base material | The lapping liquid that employing is made up of 80% deionized water, 19.5% silica abrasive grains and 0.5% TMAH uses typical grinding pad to remove residue by grinding-material |
| 6 | The lapping liquid that employing is made up of 1.05% TMAH, 93.95% water, 3% glycerine and 2% monoethanolamine uses the diamond lap pad to remove mainly and is ground base material | The lapping liquid that employing is made up of 1.05% TMAH, 93.95% water, 3% glycerine and 2% monoethanolamine uses the alumina lap pad to remove remainder and is ground base material | The lapping liquid that employing is made up of 0.5% TMAH, 94.5% water and 5% glycerine uses the silicon oxide particle grinding pad to remove residue and is ground base material |
| 7 | The lapping liquid that employing is made up of 1.05% TMAH, 93.95% water, 3% glycerine and 2% monoethanolamine uses the alumina lap pad to remove mainly and is ground base material | The lapping liquid that employing is made up of 0.5% TMAH, 94.5% water and 5% glycerine uses the silicon oxide particle grinding pad to remove residue and is ground base material | |
| 8 | The lapping liquid that employing is made up of 1.5% citric acid, 94.5% water, 3% glycerine and 1% monoethanolamine uses the cerium oxide particle grinding pad to remove mainly and is ground base material | The lapping liquid that employing is made up of 1.05% TMAH, 93.95% water, 3% glycerine and 2% monoethanolamine uses the silicon oxide particle grinding pad to remove residue and is ground base material | |
| 9 | The lapping liquid that employing is made up of 1.5% citric acid, 94.5% water, 3% glycerine and 1% monoethanolamine uses the cerium oxide particle grinding pad to remove mainly and is ground base material | The lapping liquid that employing is made up of 0.5% TMAH, 94.5% water and 5% glycerine uses the silicon oxide particle grinding pad to remove residue and is ground base material |
| 10 | The lapping liquid that employing is made up of 1.05% TMAH, 93.95% water, 3% glycerine and 2% monoethanolamine uses the diamond lap pad to remove mainly and is ground base material | The lapping liquid that employing is made up of 1.05% TMAH, 93.95% water, 3% glycerine and 2% monoethanolamine uses the diamond lap pad to regulate technology removal remainder and is ground base material | The lapping liquid that employing is made up of 80% deionized water, 19.5% silica abrasive grains and 0.5% TMAH uses typical grinding pad to remove residue by grinding-material |
| 11 | Employing water is lapping liquid, uses skive to grind and removes mainly by the grinding base material | Employing is by 0.5% TMAH, 89.5% water, and 5% glycerine, 3% monoethanolamine, the lapping liquid that 2% boric acid is formed uses the diamond lap pad to remove main residue and is ground base material | Employing is by 86.5% deionized water, and the lapping liquid that 10% silica abrasive grains, 0.5% TMAH and 3% glycerine are formed uses typical grinding pad to remove residue by grinding-material |
| 12 | Employing water is lapping liquid, uses skive to grind and removes mainly by the grinding base material | The lapping liquid that employing is made up of 2% DTAB, 3% potassium silicate, 3% monoethanolamine, 90% water and 2% BTA uses the diamond lap pad to remove main residue and is ground base material | The lapping liquid that employing is made up of 0.5% TMAH, 89.5% water, 6% glycerine, 2.5% triethanolamine and 2.5% boric acid uses the silicon oxide particle grinding pad to remove residue and is ground base material |
| 13 | Employing is by 5% glycerine, 93.85% water, 0.05% BTA, 0.1%2-phosphonic acid butane-1,2, and the lapping liquid that 4-tricarboxylic acids and 1% hydrogen peroxide are formed uses the alumina particle grinding pad to remove mainly by grinding-material | The lapping liquid that employing is made up of 5% glycerine, 94.47% water, 0.03% BTA and 0.5% hydrogen peroxide uses the silicon oxide particle grinding pad to remove residue by grinding-material |
Effect embodiment
Embodiment 1～4 is compared polishing condition and test result such as following table 2 with traditional finishing method:
Table 2, effect embodiment and the contrast of traditional finishing method
By data as can be known, the grinding rate that common lapping mode produces is less than 1 micron/minute, and the finishing method that adopts the present invention to put down in writing can increase substantially grinding rate, can reach tens microns/minute, therefore possesses good prospects for application.
Claims (7)
1. a cmp method that is applied in the penetrated through via holes interconnection technique (TSV) is characterized in that described method comprises the steps:
(1) adopting fixedly, the main quilt of grinding pad polishing of abrasive grains grinds base material;
(2) polishing residue is ground base material.
2. method according to claim 1 is characterized in that, with the fixing described residue quilt of the grinding pad polishing grinding base material of abrasive grains.
3. method according to claim 1 is characterized in that, polish described residue quilt grinding base material with the ground slurry that contains abrasive grains on traditional typical grinding pad.
4. method according to claim 1 is characterized in that described fixedly abrasive grains is selected from one or more in silica, cerium oxide, aluminium oxide and the diamond.
5. method according to claim 1 is characterized in that, the described base material that ground is selected from silicon, copper, tantalum and the tantalum nitride one or more.
6. method according to claim 1 is characterized in that, described cmp method also comprises and adopts the skive Ginding process.
7. method according to claim 1 is characterized in that, described skive Ginding process be silicon by grinding-material.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN2009102013791A CN102101263A (en) | 2009-12-18 | 2009-12-18 | Chemically mechanical polishing method |
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| CN2009102013791A CN102101263A (en) | 2009-12-18 | 2009-12-18 | Chemically mechanical polishing method |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103372809A (en) * | 2012-04-12 | 2013-10-30 | 江西赛维Ldk太阳能高科技有限公司 | Method for improving silicon block ground surface quality |
| CN113423799A (en) * | 2019-10-03 | 2021-09-21 | 日产化学株式会社 | Polishing composition containing cation for eliminating swelling around laser mark |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1447735A (en) * | 2000-08-14 | 2003-10-08 | 3M创新有限公司 | Abrasive pad for CMD |
| US20030211744A1 (en) * | 2002-05-07 | 2003-11-13 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method for preventing or reducing anodic cu corrosion during cmp |
| CN1567539A (en) * | 2003-07-02 | 2005-01-19 | 旺宏电子股份有限公司 | Chemically machinery milling technique and device |
| CN1597254A (en) * | 2003-09-15 | 2005-03-23 | 联华电子股份有限公司 | Grinding pad and method of grinding crystal wafer |
| CN101112751A (en) * | 2006-07-26 | 2008-01-30 | 台湾积体电路制造股份有限公司 | Chemical mechanical lapping system and chemical mechanical lapping method |
| CN101468448A (en) * | 2007-12-28 | 2009-07-01 | 安集微电子（上海）有限公司 | Chemical mechanical polishing technological process |
-
2009
- 2009-12-18 CN CN2009102013791A patent/CN102101263A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1447735A (en) * | 2000-08-14 | 2003-10-08 | 3M创新有限公司 | Abrasive pad for CMD |
| US20030211744A1 (en) * | 2002-05-07 | 2003-11-13 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method for preventing or reducing anodic cu corrosion during cmp |
| CN1567539A (en) * | 2003-07-02 | 2005-01-19 | 旺宏电子股份有限公司 | Chemically machinery milling technique and device |
| CN1597254A (en) * | 2003-09-15 | 2005-03-23 | 联华电子股份有限公司 | Grinding pad and method of grinding crystal wafer |
| CN101112751A (en) * | 2006-07-26 | 2008-01-30 | 台湾积体电路制造股份有限公司 | Chemical mechanical lapping system and chemical mechanical lapping method |
| CN101468448A (en) * | 2007-12-28 | 2009-07-01 | 安集微电子（上海）有限公司 | Chemical mechanical polishing technological process |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103372809A (en) * | 2012-04-12 | 2013-10-30 | 江西赛维Ldk太阳能高科技有限公司 | Method for improving silicon block ground surface quality |
| CN113423799A (en) * | 2019-10-03 | 2021-09-21 | 日产化学株式会社 | Polishing composition containing cation for eliminating swelling around laser mark |
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Application publication date: 20110622 |