CN101112751A - Chemical mechanical lapping system and chemical mechanical lapping method - Google Patents
Chemical mechanical lapping system and chemical mechanical lapping method Download PDFInfo
- Publication number
- CN101112751A CN101112751A CNA2007100039618A CN200710003961A CN101112751A CN 101112751 A CN101112751 A CN 101112751A CN A2007100039618 A CNA2007100039618 A CN A2007100039618A CN 200710003961 A CN200710003961 A CN 200710003961A CN 101112751 A CN101112751 A CN 101112751A
- Authority
- CN
- China
- Prior art keywords
- slurry
- grind
- composition
- grinding pad
- grinds
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B57/00—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents
- B24B57/02—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents for feeding of fluid, sprayed, pulverised, or liquefied grinding, polishing or lapping agents
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
- H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
Abstract
A chemical machinery grinding system and a chemical machinery grinding method, the system comprises grinding pad, upper mud distributing system and lower mud distributing system. The upper mud distributing system is used to distribute at least a first mud component of the mud to the grinding pad, and is arranged with a first mud storage device. The lower mud distributing system is used to distribute at least a second mud component from the bottom of the grinding pad as well as a hatch locating in the grinding pad, and is arranged with a second mud storage device. The present invention implements excellent flexibility and meets customization requirement of various needs, not only improve grinding quality, but reduce cost.
Description
Technical field
The present invention relates to a kind of integrated circuit manufacturing equipment, particularly a kind of chemical machinery polishing system and chemical and mechanical grinding method.
Background technology
Cmp (CMP) is the general implementation mode that a kind of integrated circuit is shaped.In general, cmp is a kind of flatening process that is applied to semiconductor wafer.Cmp utilizes physics and chemical force to come grinding wafers simultaneously.When wafer is positioned on the grinding pad, load force is put on the back side of a wafer.Then, when contain be corrosive and reactive chemicals grind slurry when the below, grinding pad and wafer can reverse.Cmp is a kind of effective ways of realizing the entire wafer planarization.
Fig. 1 illustrates a kind of slurry that grinds on known to distribute chemical machinery polishing system, and it comprises grinding head 2, film 4, wafer 6 and grinding pad 8.Wafer 6 is attached to film 4, and grinding pad 8 contacts with wafer 6 in process of lapping.Grinding pad 8 is attached to platform 10, and platform 10 rotates with fixed rotating speed.Grinding slurry distribution system 12 can divide facing-up to starch to the upper surface of grinding pad 8.Grinding head 2 can move forward and backward between the center of grinding pad 8 and edge.Because moving of grinding head 2 and grinding pad 8, grinding slurry can be distributed between wafer 6 and the grinding pad 8 via the groove (not shown) in the grinding pad 8.The chemicals and the corrosive deposit that grind in the slurry can generation effects on wafer 6.
Yet, grind slurry on known and distribute chemical machinery polishing system can have some shortcomings.At first, be not all grind slurry and all can be allocated between wafer 6 and the grinding pad 8.Therefore, the most slurry that grinds will be wasted.Secondly, grind slurry regular meeting from the marginal flow of wafer 6 to its below, thereby can make the grinding of wafer 6 edges more than the grinding of wafer 6 centers.
Fig. 2 shows a kind of slurry that grinds under known and distributes chemical machinery polishing system.Except grinding slurry is via down distribution system 14 is assigned with, and grinds slurry down and distributes chemical machinery polishing system to be similar to grind slurry and distribute chemical machinery polishing system.Following distribution system 14 penetrates grinding pad 8 and divides the facing-up slurry in the mode of similar fountain.Because grinding slurry can directly be assigned between wafer 6 and the grinding pad 8, distribute the waste situation of chemical machinery polishing system less so grind slurry down.Yet, with used grind the slurry remove but can be quite the difficulty.
Summary of the invention
In view of this, the objective of the invention is to provide a kind of chemical machinery polishing system, and it can utilize the advantage of existing chemical machinery polishing system, to overcome the shortcoming of known chemical machinery polishing system.
In order to address the above problem, the present invention adopts feature as described below substantially.That is to say that the objective of the invention is to provide a kind of chemical machinery polishing system, it comprises grinding pad; On grind the slurry distribution system, grind the slurry composition to this grinding pad in order at least the first of minute facing-up slurry, and have first and grind the slurry holder; And under grind the slurry distribution system, in order to from the bottom of this grinding pad and distribute this to grind at least the second of slurry via the opening that is arranged in this grinding pad and grind the slurry composition, and have second and grind the slurry holder.
According to above-mentioned purpose, chemical machinery polishing system of the present invention also comprises cleaning systems, and these cleaning systems connect from the bottom of this grinding pad, and wherein, these cleaning systems are carried out following at least function: penetrate clean solution to this grinding pad; And remove from this grinding pad and to grind slurry.
According to above-mentioned purpose, chemical machinery polishing system of the present invention also comprises the additional slurry distribution system that grinds, in order to minute facing-up slurry to this grinding pad.
Another object of the present invention is that a kind of chemical and mechanical grinding method will be provided, and it comprises provides grinding pad; Provide platform, to support this grinding pad and to make this grinding pad rotation; Will on grind the slurry distributor and be arranged on this grinding pad, wherein, grind the slurry distributor on this and divide at least the first of facing-up slurry to grind the slurry composition to this grinding pad; And will grind the slurry distributor down and be arranged under this grinding pad, wherein, this time ground the slurry distributor from the bottom of this grinding pad and distribute this to grind at least the second of slurry via the opening that is arranged in this grinding pad and grind and starch composition to this grinding pad.
According to above-mentioned purpose, grind the slurry distributor on this and should grind down and starch distributor and distribute this first to grind and starch composition and this second and grind the slurry composition synchronously or asynchronously.
According to above-mentioned purpose, this first grinds the slurry composition and is the more cheap slurry composition that grinds, and this second grinds the slurry composition and be the expensive slurry composition that grinds.
According to above-mentioned purpose, this first grind slurry composition and this second grind the slurry composition can't be by premix.
According to above-mentioned purpose, this first grinds the slurry composition and grinds the non-key composition of slurry for this, and this second grinds and starch composition and grind the key component of slurry for this.
According to above-mentioned purpose, this first grinds the slurry composition and grinds the unblock composition of slurry for this, and this second grinds and starch composition and grind the obstruction composition of slurry for this.
According to above-mentioned purpose, this first grinds slurry composition and this second and grinds that to starch composition be the identical slurry composition that grinds.
Useful technique effect of the present invention is: can realize significant flexibility and can satisfy demand customized for different grinding technics, it can not only improve Grinding Quality, but also can reduce cost.Because the composition that grinds in the slurry can be classified into different colonies, and can dispense, so can in chemical mechanical planarization process, bring into play the effect of various heterogeneities fully from the different slurry distribution systems that grinds.Simultaneously, can accelerate the speed of cmp.
For above-mentioned purpose of the present invention, feature and advantage can be become apparent, preferred embodiment cited below particularly and conjunction with figs. elaborate.
Description of drawings
Fig. 1 shows a kind of slurry that grinds on known and distributes chemical machinery polishing system;
Fig. 2 shows a kind of slurry that grinds under known and distributes chemical machinery polishing system;
Grind the slurry distribution system on Fig. 3 shows and has and grind the chemical machinery polishing system of starching distribution system down;
Fig. 4 shows the cleaning systems that are attached to chemical machinery polishing system, wherein grinds slurry distribution system and cleaning systems down and shares a common conduit;
Fig. 5 shows the cleaning systems that are attached to chemical machinery polishing system, wherein grinds slurry distribution system and cleaning systems down and has separately conduit; And
Fig. 6 shows the additional different configuration structures that grind the slurry distribution system.
Wherein, description of reference numerals is as follows:
2 grinding heads, 4 films, 6 wafers
8 grinding pads, 10 platforms 12 grind the slurry distribution system
14 times distribution system 22 grinding heads 24 films
Grind the slurry distribution system on 26 wafers, 30 grinding pads 120
Grind slurry distributor 124 pumps 126 on 122 and grind the slurry holder
Grind the slurry distribution system for 220 times and grind slurry distributor 224 pumps for 222 times
226 grind slurry holder 228 valves 230 conduits
320 cleaning systems, 324 pumps, 328 valves
422,522 another grind the slurry distributor
The specific embodiment
Existing conjunction with figs. explanation the preferred embodiments of the present invention.
Fig. 3 is the schematic diagram of the chemical machinery polishing system of preferred embodiment.Grinding head 22 places on the grinding pad 30.Grinding head 22 has film 24, and wafer 26 is attached under the film 24.Chemical machinery polishing system comprises two distribution systems, grinds slurry distribution system 120 on promptly and grinds down and starch distribution system 220.On grind slurry distribution system 120 and grind slurry distributor 122, pump 124 on having and grind slurry holder 126.Under grind slurry distribution system 220 and have and grind down slurry distributor 222, pump 224 and grind and starch holder 226.Under grind slurry distributor 222 and pass grinding pad 30 via an opening, and will grind slurry and upwards be assigned on the grinding pad 30.Under grind the slurry distributor 222 be connected in conduit 230.Conduit 230 extends under the grinding pad 30, and conduit 230 be connected in grind the slurry holder 226.Under grind slurry distribution system 220 and can preferably have valve 228, and valve 228 can be used to regulate the flow rate of grinding slurry and/or On/Off and grinds slurry and flow.
Will on grind slurry distribution system 120 and grind down under the situation that slurry distribution system 220 combines, can realize significant flexibility and can satisfy demand customized that this can not only improve Grinding Quality, but also can reduce cost for different grinding technics.For the chemical machinery polishing system with two distribution systems, its advantage is that the composition that is to grind in the slurry can be classified into different colonies, and can dispense from the different slurry distribution systems that grinds.
In first embodiment, the composition that grinds slurry is classified as key component and non-key composition.Preferably, non-key composition comprises the composition that can not produce materially affect to the result of cmp, no matter and non-key composition be by on grind that slurry distributor 122 distributes or by under grind slurry distributor 222 and distribute.For instance, non-key composition can comprise corrosive agent, for example SiO
2Or Al
2O
3Deng material.Key component preferably can comprise for the very important composition of chemical mechanical milling tech, for example is used to promote the composition of grinding rate, corrosion control and profile control.In the embodiment of demonstration, copper corrosion inhibitor BTA (BTA) is to be classified as a kind of key component, and thereby preferably under grind slurry distributor 222 and distribute.
In a second embodiment, the composition that grinds slurry is classified as expensive composition and non-expensive composition.Preferably, non-expensive composition (for example corrosive substance and H
2O
2) from grind the slurry distributor 122 distribute, and expensive composition (for example BTA) under grind the slurry distributor 222 distribute.From grind down that slurry distributor 222 distributes grind the slurry composition be impossible before wafer 26 contact by wiping from grinding pad 30, thereby can not be wasted.On the other hand, from grind the slurry distributor 122 distribute grind the slurry composition then may be wasted.
Having some to grind the slurry composition can't be by premix.For instance, if corrosive agent and additive by premix, then after after a while, deposit promptly can result from and grind in the slurry.In the third embodiment of the present invention, the slurry (can't premix) that grinds of these forms preferably is assigned with separately composition, is mixed in then on the grinding pad 30.Since can't premix grind slurry variation in time, so can't premix grind slurry and mix after, it can preferably act on the of short duration time on wafer.Yet, if the slurry that grinds that can't premix is distributed by same distributor, its with promptly crossed than the time of growing before wafer 26 contacts.Distributed by different distributors if grind the slurry composition, the then different slurry compositions that grind still can be kept unmixing state, nuzzle up that composition is starched in different grinding and with its mixing up to grinding head 22.Grind the slurry composition when mixed and grind the slurry composition when with therefore significantly shortening of time durations between wafer contact.
In the 4th embodiment, identical grind slurry by on grind slurry distributor 122 and grind slurry distributor 222 down and distribute, and by on the slurry amount of grinding of grinding slurry distributor 122 and grinding 222 distribution of slurry distributor down can be identical or different.By grind down that slurry distributor 222 distributes grind slurry act on as much as possible wafer 26 in the heart, and thereby be easy to produce grinding rate preferably at the center of wafer 26.By on grind the slurry that grinds that slurry distributor 122 distributes and then act on as much as possible on the edge of wafer 26, and thereby be easy to produce grinding rate preferably at the edge of wafer 26.By pre-determining by the profile of grinding wafers, by on grind slurry distributor 122 and grind down that slurry distributor 222 distributes grind the slurry amount and can be adjusted, to obtain wafer surface uniformly.
Chemical mechanical milling tech has the tendency that depends on different institutions for the effect of metal (for example copper) and nonmetal (for example oxide, nitride and porous low k value dielectric material).The cmp of metal relatively relies on chemical effect (for example oxidation), and nonmetal cmp relatively relies on mechanical effect (for example attrition).As mentioned above, in the 5th embodiment, grind the slurry composition compared with what have a mechanical effect, the slurry composition that grinds with chemical effect is preferably distributed by different distributors.In the embodiment of demonstration, if H
2O
2(make copper oxidation and thereby softening copper) be by under grind slurry distributor 222 and distribute, then can obtain cmp speed faster.And, the H of varying number
2O
2Can under grind slurry distributor 222 and grind slurry distributor 122 and distribute, with the profile of further adjustment wafer.
Deionized water can be from grinding slurry distributor 122 or grinding down and starch distributor 222 distribution.Preferably, among the formerly described embodiment, the distribution of deionized water can not classified with previous described standard.Those skilled in the art can understand the optimal allocation position of deionized water naturally.
In the 6th embodiment, grind slurry or grind the slurry composition and be classified as and block composition (it is easy to block the groove of grinding pad 30) and unblock composition (it is easy to remove from grinding pad 30 relatively).The example of unblock composition comprises that slurry and solution are ground in dilution, but are not limited thereto.The example that blocks composition comprises corrosive deposit, but is not limited thereto.Preferably, block composition by on grind slurry distributor 122 and distribute, and the unblock composition by under grind slurry distributor 222 and distribute.Therefore, grinding pad 30 is difficult for blocking.
Among the formerly described embodiment, on the distribution of grinding slurry distributor 122 and grinding slurry distributor 222 down can use synchronously or asynchronous mode carries out.In synchronous mode, grind the slurry composition simultaneously by on grind slurry distributor 122 and grind 222 distribution of slurry distributor down.In asynchronous mode, grind the slurry composition the different time by on grind slurry distributor 122 and grind 222 distribution of slurry distributor down.Because have an above distributor, the pattern that is adopted can influence the result of chemical mechanical milling tech.For instance, in order to grind copper, hydrogen peroxide (H
2O
2) be used for oxidation and thereby softening copper surface.Then, the cupric oxide agent that can be corroded is removed.On the other hand, copper corrosion inhibitor BTA (BTA) can reduce the speed of cmp.Therefore, in the embodiment of demonstration, BTA by under grind slurry distributor 222 and distribute, and H
2O
2By on grind slurry distributor 122 and distribute.Stablize BTA and H in order to make chemical mechanical milling tech
2O
2Can distribute asynchronously, wherein, at H
2O
2By on grind slurry distributor 122 and distribute and reduce before the speed of cmp, BTA by under grind slurry distributor 222 and distribute and on wafer 26, act on a period of time.On the contrary, BTA can by on grind slurry distributor 122 and distribute, and H
2O
2Can by under grind slurry distributor 222 and distribute, to accelerate the speed of cmp.In this case, at BTA and H
2O
2Time between the distribution can determine the speed of cmp.
Distribution system needs time-based maintenance, that is the prevention and maintain that is often referred to.In only having a known chemical machinery polishing system that grinds the slurry distribution system, when grinding the slurry distribution system when accepting prevention and maintain, whole chemical machinery polishing system must be out of service.Yet, in having two or more chemical machinery polishing systems that grind the slurry distribution system, grind the slurry distribution system when accepting prevention and maintain when one, other grind the operation that the slurry distribution system still can be supported chemical machinery polishing system.Therefore, the utilization rate of chemical machinery polishing system can be enhanced.
Fig. 4 shows the chemical machinery polishing system with cleaning systems 320.In an embodiment, cleaning systems 320 include valve 328 and pump 324, and these cleaning systems 320 connect from the bottom of this grinding pad, and valve 328 and pump 324 are connected in down and grind slurry distributor 222.When grinding 220 operations of slurry distribution system instantly, valve 228 can open and valve 328 can cut out.When cleaning systems 320 operations, valve 328 can open and valve 228 can cut out.Cleaning systems 320 can be carried out two kinds of functions.The first, cleaning systems 320 can distribute clean solution to grinding pad 30.Under situation, grind slurry holder 226 and can empty and distribute clean solution with valve 228 and valve 328.The second, cleaning systems 320 also can be removed the used slurry that grinds from grinding pad 30.In embodiment optionally, grind slurry distribution system 220 down and can have a single conduit that comes from cleaning systems 320, with and relative configurations be shown among Fig. 5.
Aforesaid preferred embodiment only grinds the slurry distributor with two and illustrates, yet more a plurality of slurry distribution systems that grind can be added into, to satisfy the demand customized of chemical mechanical milling tech.The additional example embodiment of starching distribution system of grinding is shown in Figure 6.In an embodiment, another grinds slurry distributor 422 and places on the grinding pad 30, and this grind slurry distributor 422 and on grind slurry distributor 122 and will grind slurry respectively and be dispensed to diverse location place on the grinding pad 30.For instance, this grind slurry distributor 422 with on grind slurry distributor 122 and be arranged at respectively on the relative side of grinding pad 30.In other embodiments, another grind slurry distributor 522 adjacent under grind slurry distributor 222, but this grind slurry distributor 522 with grind down that slurry distributor 222 distributed to grind slurry (non-premix) be inequality.Each grinds slurry distributor 422 and 522 can be connected in an identical slurry holder that grinds that grinds slurry distributor 122 or grind down that slurry distributor 222 connected as the same, thereby can grind slurry distributor 122 or grind down and distribute the identical slurry that grinds the slurry distributor 222 as the same.Selectively, each grind slurry distributor 422 and 522 can be connected in separately grind the slurry holder, and thereby can distribute to be different from and grind slurry distributor 122 and grind the difference that slurry distributor 222 distributed down and grind slurry.
Though the present invention is disclosed in preferred embodiment; yet it is not in order to limit the present invention; in not breaking away from design of the present invention and scope, those skilled in the art can make various changes and modification, so protection scope of the present invention is as the criterion with appending claims institute restricted portion.
Claims (10)
1. chemical machinery polishing system comprises:
Grinding pad;
On grind the slurry distribution system, grind the slurry composition to this grinding pad in order at least the first of minute facing-up slurry, and have first and grind the slurry holder; And
Under grind the slurry distribution system, in order to from the bottom of this grinding pad and distribute this to grind at least the second of slurry via the opening that is arranged in this grinding pad and grind the slurry composition, and have second and grind the slurry holder.
2. chemical machinery polishing system as claimed in claim 1 is characterized in that this chemical machinery polishing system also comprises cleaning systems, and these cleaning systems connect from the bottom of this grinding pad, and wherein, these cleaning systems are carried out following at least function:
Penetrate clean solution to this grinding pad; And
Grind slurry from this grinding pad removal.
3. chemical machinery polishing system as claimed in claim 1 is characterized in that, this chemical machinery polishing system also comprises the additional slurry distribution system that grinds, in order to minute facing-up slurry to this grinding pad.
4. chemical and mechanical grinding method comprises:
Grinding pad is provided;
Provide platform, to support this grinding pad and to make this grinding pad rotation;
Will on grind the slurry distributor and be arranged on this grinding pad, wherein, grind the slurry distributor on this and divide at least the first of facing-up slurry to grind the slurry composition to this grinding pad; And
To grind the slurry distributor down and be arranged under this grinding pad, wherein, this time ground the slurry distributor from the bottom of this grinding pad and distribute this to grind at least the second of slurry via the opening that is arranged in this grinding pad and grind and starch composition to this grinding pad.
5. chemical and mechanical grinding method as claimed in claim 4 is characterized in that, grinds the slurry distributor on this and should grind down and starch distributor and distribute this first to grind and starch composition and this second and grind the slurry composition synchronously or asynchronously.
6. chemical and mechanical grinding method as claimed in claim 4 is characterized in that, this first grinds the slurry composition and be the more cheap slurry composition that grinds, and this second grinds the slurry composition and be the expensive slurry composition that grinds.
7. chemical and mechanical grinding method as claimed in claim 4 is characterized in that, this first grind slurry composition and this second grind the slurry composition can't be by premix.
8. chemical and mechanical grinding method as claimed in claim 4 is characterized in that, this first grinds the slurry composition and grind the non-key composition of slurry for this, and this second grinds and starch composition and grind the key component of slurry for this.
9. chemical and mechanical grinding method as claimed in claim 4 is characterized in that, this first grinds the slurry composition and grind the unblock composition of slurry for this, and this second grinds and starch composition and grind the obstruction composition of slurry for this.
10. chemical and mechanical grinding method as claimed in claim 4 is characterized in that, this first grinds slurry composition and this second and grind that to starch composition be the identical slurry composition that grinds.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US11/493,144 | 2006-07-26 | ||
| US11/493,144 US20080305725A1 (en) | 2006-07-26 | 2006-07-26 | Chemical mechanical polish system having multiple slurry-dispensing systems |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN101112751A true CN101112751A (en) | 2008-01-30 |
Family
ID=39021364
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNA2007100039618A Pending CN101112751A (en) | 2006-07-26 | 2007-01-19 | Chemical mechanical lapping system and chemical mechanical lapping method |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US20080305725A1 (en) |
| CN (1) | CN101112751A (en) |
| TW (1) | TWI329343B (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102101263A (en) * | 2009-12-18 | 2011-06-22 | 安集微电子（上海）有限公司 | Chemically mechanical polishing method |
| CN104201141A (en) * | 2014-08-27 | 2014-12-10 | 上海华力微电子有限公司 | Grinding pad and wafer cleaning method |
| CN110962040A (en) * | 2018-09-28 | 2020-04-07 | 台湾积体电路制造股份有限公司 | Cleaning method and cleaning system |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9527188B2 (en) * | 2012-08-16 | 2016-12-27 | Taiwan Semiconductor Manufacturing Company, Ltd. | Grinding wheel for wafer edge trimming |
| US10293462B2 (en) * | 2013-07-23 | 2019-05-21 | Taiwan Semiconductor Manufacturing Company, Ltd. | Pad conditioner and method of reconditioning planarization pad |
| US11031250B2 (en) | 2018-11-29 | 2021-06-08 | International Business Machines Corporation | Semiconductor structures of more uniform thickness |
Family Cites Families (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3334139B2 (en) * | 1991-07-01 | 2002-10-15 | ソニー株式会社 | Polishing equipment |
| US5876271A (en) * | 1993-08-06 | 1999-03-02 | Intel Corporation | Slurry injection and recovery method and apparatus for chemical-mechanical polishing process |
| US5554064A (en) * | 1993-08-06 | 1996-09-10 | Intel Corporation | Orbital motion chemical-mechanical polishing apparatus and method of fabrication |
| JP2581478B2 (en) * | 1995-01-13 | 1997-02-12 | 日本電気株式会社 | Flat polishing machine |
| US5658185A (en) * | 1995-10-25 | 1997-08-19 | International Business Machines Corporation | Chemical-mechanical polishing apparatus with slurry removal system and method |
| US5709593A (en) * | 1995-10-27 | 1998-01-20 | Applied Materials, Inc. | Apparatus and method for distribution of slurry in a chemical mechanical polishing system |
| US6056851A (en) * | 1996-06-24 | 2000-05-02 | Taiwan Semiconductor Manufacturing Company | Slurry supply system for chemical mechanical polishing |
| TW479841U (en) * | 1998-06-17 | 2002-03-11 | United Microelectronics Corp | Polishing slurry supply apparatus |
| US6220934B1 (en) * | 1998-07-23 | 2001-04-24 | Micron Technology, Inc. | Method for controlling pH during planarization and cleaning of microelectronic substrates |
| US6410441B1 (en) * | 1999-12-13 | 2002-06-25 | Worldwide Semiconductor Manufacturing Corp. | Auto slurry deliver fine-tune system for chemical-mechanical-polishing process and method of using the system |
| US6364744B1 (en) * | 2000-02-02 | 2002-04-02 | Agere Systems Guardian Corp. | CMP system and slurry for polishing semiconductor wafers and related method |
| US6514863B1 (en) * | 2000-02-25 | 2003-02-04 | Vitesse Semiconductor Corporation | Method and apparatus for slurry distribution profile control in chemical-mechanical planarization |
| KR20020084144A (en) * | 2000-12-22 | 2002-11-04 | 코닌클리즈케 필립스 일렉트로닉스 엔.브이. | Method and apparatus for chemical-mechanical polishing(cmp) using upstream and downstream fluid dispensing means |
| US6722949B2 (en) * | 2001-03-20 | 2004-04-20 | Taiwan Semiconductors Manufacturing Co., Ltd | Ventilated platen/polishing pad assembly for chemcial mechanical polishing and method of using |
| US6599175B2 (en) * | 2001-08-06 | 2003-07-29 | Speedfam-Ipeca Corporation | Apparatus for distributing a fluid through a polishing pad |
| US20060157450A1 (en) * | 2005-01-20 | 2006-07-20 | Hsin-Kun Chu | Method for improving hss cmp performance |
-
2006
- 2006-07-26 US US11/493,144 patent/US20080305725A1/en not_active Abandoned
- 2006-12-28 TW TW095149478A patent/TWI329343B/en active
-
2007
- 2007-01-19 CN CNA2007100039618A patent/CN101112751A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102101263A (en) * | 2009-12-18 | 2011-06-22 | 安集微电子（上海）有限公司 | Chemically mechanical polishing method |
| CN104201141A (en) * | 2014-08-27 | 2014-12-10 | 上海华力微电子有限公司 | Grinding pad and wafer cleaning method |
| CN110962040A (en) * | 2018-09-28 | 2020-04-07 | 台湾积体电路制造股份有限公司 | Cleaning method and cleaning system |
| CN110962040B (en) * | 2018-09-28 | 2021-06-29 | 台湾积体电路制造股份有限公司 | Polishing method and polishing system |
Also Published As
| Publication number | Publication date |
|---|---|
| TWI329343B (en) | 2010-08-21 |
| TW200807529A (en) | 2008-02-01 |
| US20080305725A1 (en) | 2008-12-11 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN101112751A (en) | Chemical mechanical lapping system and chemical mechanical lapping method | |
| CN104919575B (en) | Chemical-mechanical polisher and method | |
| KR100476484B1 (en) | Semiconductor Device Formation Method | |
| US7125318B2 (en) | Polishing pad having a groove arrangement for reducing slurry consumption | |
| EP1111665A3 (en) | Method of planarizing a substrate surface | |
| JP2008103770A (en) | Device and method of continuously supplying and adjusting polishing slurry | |
| CN102553849B (en) | Cleaning device and cleaning method for fixed grinding particle polishing pad | |
| US6227947B1 (en) | Apparatus and method for chemical mechanical polishing metal on a semiconductor wafer | |
| CN100592960C (en) | A method for reducing corrosion of crystal plate in cuprum chemistry mechanical lapping technics | |
| US6390902B1 (en) | Multi-conditioner arrangement of a CMP system | |
| GB2464995A (en) | CMP apparatus with slurry injector | |
| US6679765B2 (en) | Slurry supply system disposed above the rotating platen of a chemical mechanical polishing apparatus | |
| CN110524413A (en) | Chemical mechanical planarization systems and pad freeing wheel | |
| US9296088B2 (en) | Method and device for the injection of CMP slurry | |
| JP2001179611A (en) | Chemical machine polishing device | |
| CN101081488A (en) | Online control method of mixed type chemical mechanical buffing technics | |
| CN100526017C (en) | Chemomechanical grinder and its grinding pad regulating method | |
| US7025662B2 (en) | Arrangement of a chemical-mechanical polishing tool and method of chemical-mechanical polishing using such a chemical-mechanical polishing tool | |
| WO2002023613A3 (en) | Metal cmp process with reduced dishing | |
| CN101722468A (en) | Chemical mechanical polishing method, grinding fluid nozzle and chemical mechanical polishing device | |
| CN109262446A (en) | A kind of chemical and mechanical grinding method and chemical mechanical polishing device | |
| WO2002024413A3 (en) | Polishing by cmp for optimized planarization | |
| CN101347923B (en) | Method and apparatus for improving insufficiency of wafer grinding and thick thickness | |
| KR200182720Y1 (en) | Device for cleaning wafer carrier of chemical mechanical polishing system | |
| JP2005260185A (en) | Polishing pad |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C12 | Rejection of a patent application after its publication | ||
| RJ01 | Rejection of invention patent application after publication |
Open date: 20080130 |