1329343 九、發明說明： 【發明所屬之技術領域】 . 本發明是有關於一種積體電路製造設備，特別是有 關於一種化學機械研磨系統。 【先前技術】 化學機械研磨（CMP)是一種積體電路成形之普遍施 行方式。一般來說，化學機械研磨是運用於半導體晶圓 • 之平坦化製程。化學機械研磨同時利用物理及化學力來 研磨晶圓。當晶圓位於一研磨墊上時，一負載力是施加 於一晶圓之背面。接著，當含有腐蝕性及反應性化學藥 品之一研漿通過下方時，研磨墊與晶圓會反轉。化學機 械研磨是一種達成整個晶圓平坦化之有效方法。 第1圖係繪示一種習知之上研漿分配化學機械研磨 系統，其包括有一研磨頭2、一薄膜4、一晶圓6及一研 磨墊8。晶圓6是附著於薄膜4，而研磨墊8在研磨過程 中是與晶圓6接觸。研磨墊8是附著於一平台10，而平 台10是以一固定轉速旋轉。一研漿分配系統12可分配 研漿至研磨墊8之上表面。研磨頭2會前後移動於研磨 墊8之中心與邊緣之間。由於研磨頭2及研磨墊8之移 動，研漿會經由研磨墊8中之溝槽（未顯示）分佈於晶圓6 與研磨墊8之間。研漿中之化學藥品及腐蝕物質即可在 晶圓6上產生作用。 然而，習知之上研毁分配化學機械研磨系統會具有 0503-A32537TWF/Hawdong 5 L329343 一些缺點。首先，並非所有的研漿都會分配於晶圓6與 研磨墊8之間。因此，一大部份的研漿將會被浪費掉。 其次，研漿常會從晶圓6之邊緣流至其下方，因而會使 得晶圓6邊緣處之研磨多於晶圓6中心處之研磨。 第2圖係顯示一種習知之下研漿分配化學機械研磨 系統。下研漿分配化學機械研磨系統乃是類似於上研漿 分配化學機械研磨系統，除了研漿是經由一下分配系統 14來被分配。下分配系統14是以類似喷泉之方式來穿透 研磨墊8及分配研漿。由於研漿能夠直接被分配到晶圓6 與研磨墊8之間，故下研漿分配化學機械研磨系統之浪 費情形較小。然而，要將使用過之研漿移除卻會是相當 困難的。 有鑑於此，本發明之目的是要提供一種化學機械研 磨系統，其可利用現存化學機械研磨系統之優點，以克 服習知化學機械研磨系統之缺點。 【發明内容】 本發明基本上採用如下所詳述之特徵以為了要解決 上述之問題。也就是說，本發明之一目的是要提供一種 化學機械研磨系統，其包括一研磨墊；一上研漿分配系 統，係用以分配一研漿之至少一第一研聚成份至該研磨 墊上，並且具有一第一研漿儲存器；以及一下研漿分配 系統，係用以從該研磨墊之底部及經由位於該研磨墊中 之一開口分配該研漿之至少一第二研漿成份，並且具有 0503-A32537TWF/Hawdong 6 1329343 第二研漿儲存 又根據上述目的，該上 八 配系統係同步及非同步分配該第二及：下研黎分 漿成份。 弟研漿成份及該第二研 又根據上述目的，更魚括 塾之底部連m t =^^錢，係從該研磨 处. 中该清潔系統係執行至少一τ石丨丄 月匕射出一清潔溶液至該研磨 ▲下列功 排除一研漿。 ，以及從該研磨墊上 又根據上述目的，該第—研漿 之研漿成份，以及古亥第_ 子时係储存較便宜 漿成份。 *什。。係储存較昂貴之研 又根據上述目的，該第—將 之一第一部份，兮M _ 水儲存器係儲存一研漿 丨伤e亥弟一研漿儲存器係儲存竽研將々.. 二部份，以及該第一部份及該第二部份係幻^ 一弟 之非=述目的，該第—研漿儲存器係二： 之非關鍵成份，以及該第二研繁 于所水 關鍵成份。 研4存益係儲存該研漿之 又根據上述目的’該第一研漿鍺存 儲存器係儲存一相同研漿。 时及忒弟一研漿 又根據上述目的，該第_研_存器係 之非阻基成份，以及該第二研漿儲存器係 研水 阻塞成份。 ’、清存該研漿之 又根據上述目的，更包括—第三將八/ 用以分配研漿至該研磨墊上。 一水分配系統，係 〇503-A32537TWF/Hawdong 7 1329343 本發明之另一目的是要提供一種化學機械研磨方 法，其包括提供一研磨墊；提供一平台，以支撐 墊及使該研磨墊旋轉；將一上研聚分配器設置於該研磨 墊之上中’言玄上研漿分配器係分配一研漿之至少一 第-研漿成份至該研磨墊上；以及將―下研漿分配^ 置於該研磨墊之下，其中，該下研漿分配器餘該ςς 墊之底，及經由位於該研磨塾中之―開口分配該研装之 至少一弟一研漿成份該研磨墊上。 又根據上述目的’虹㈣分配器及該下研裝分配 二係同步或非同步分配該第—研漿成份及該第二研裝成 又根據上述目的，該第_ 漿成份，以及該第二研漿成份料為較便宜之研 又根據上述目的，該第貝之研敷成份。 份係無法被預混。 研-成伤及該第二研衆成 關鍵==1：^^份_研漿之非 又根據上述目的，該關鍵成份。 阻塞成份’以及該第二研㈣份係之非 又根據上述目的，該第—將、” Λ水之阻基成份。 之研漿成份，以及該第二研喂二、份係為具機械效應 漿成份。 研-成份係為具化學效應之研 又根據上述目的，該第_ 份係為相同之研漿成份。 水知及该第二研漿成 〇5〇3-A32537TWF/Hawdong 8 1329343 又根據上述目的，更包括將一清潔系統連接於該研 磨墊之底部，其中，該清潔系統係射出一清潔溶液至該 研磨墊上，以及係從該研磨墊上排除該研漿。 又根據上述目的，更包括將一附加研漿分配器設置 於該研磨墊之上，以分配研漿至該研磨墊上。 又根據上述目的，更包括將一附加研漿分配器設置 於該研磨墊之下，以分配研漿至該研磨墊上。 為使本發明之上述目的、特徵和優點能更明顯易 懂，下文特舉較佳實施例並配合所附圖式做詳細說明。 【實施方式】 茲配合圖式說明本發明之較佳實施例。 第3圖係顯示一較佳實施例之化學機械研磨系統之 示意圖。一研磨頭22是置於一研磨墊30之上。研磨頭 22具有一薄膜24，而一晶圓26是附著於薄膜24之下。 化學機械研磨系統包括有兩個分配系統，亦即一上研漿 分配系統120及一下研漿分配系統220。上研漿分配系統 120具有一上研漿分配器122、一幫浦124及一研漿儲存 器126。下研漿分配系統220具有一下研漿分配器222、 一幫浦224及一研漿儲存器226。下研漿分配器222會經 由一開口穿過研磨墊30，並將研漿向上分配到研磨墊30 上。下研漿分配器222是連接於一導管230。導管230是 延伸於研磨墊30之下，並且導管230是連接於研漿儲存 器226。下研漿分配系統220較佳地可具有一閥228，而 0503-A32537TWF/Hawdong 9 1329343 閥228可用來調節研漿之流動速率及/或開啟/關閉研漿流 動。 在將上研漿分配系統120與下研漿分配系統220結 合在一起之情形下，顯著的靈活度可以達成以及對於不 同研磨製程之定做需求可以被滿足，此將不只能改善研 磨品質，尚還可降低成本。對於具有雙分配系統之化學 機械研磨系統而言，其優點是在於研漿中之成份可以被 分類成不同的群體，並可從不同的研漿分配系統分配出 去。 在一第一實施例之中，研漿之成份乃是被分類關 鍵成份及非關鍵成份。較佳地，非關鍵成份包含了不會 使化學機械研磨之結果被實質影響的成份，不論非關鍵 成份是由上研漿分配器122或下研漿分配器222所分 配。舉例來說，非關鍵成份可包括有腐#劑，例如Si〇2 或ai2o3等物質。關鍵成份較佳地可包括有對於化學機械 研磨製程很重要之成份，例如用於增進研磨速率、腐蝕 控制及輪廓控制之成份。在一示範的實施例之中，銅腐 蝕抑制劑苯三氮二烯伍圓（BTA)是被分類為一種關鍵成 份，並因而較佳地是從下研漿分配器222所分配。 在一第二實施例之中，研漿之成份乃是被分類為昂 貴成份及非昂貴成份。較佳地，非昂貴成份（例如，腐蝕 性物質及H2〇2)是從上研槳·分配器122被分配出，而昂貴 成份（例如，BTA)是從下研漿分配器222被分配出。從下 研漿分配器222被分配出之研漿成份在與晶圓26接觸前 0503-A32537TWF/Hawdong 10 1329343 是較不可能被擦離研磨塾3 Ο，因而較不會被浪費。在另 一方面，從上研漿分配器122被分配出之研漿成份則較 可能被浪費。 有一些研漿成份無法被預混。舉例來說，如果腐蝕 劑與添加劑被預混，則在經過一段時間後，沉積物即會 產生於研漿之中。在本發明之一第三實施例之中，這些 形式的研漿（無法預混的）較佳地是以個別的成份被分 配，然後被混合於研磨墊30上。由於無法預混的研漿會 隨時間變差，故在無法預混的研漿被混合後，其可較佳 地在晶圓上運作一短暫之時間。然而，如果無法預混的 研漿是由同一個分配器所分配，則在其與晶圓26接觸前 即已過了較長的時間。如果研漿成份是由不同之分配器 所分配，則不同之研漿成份仍會維持未混合之狀態，直 到研磨頭22擦過不同之研漿成份並將其混合。在研漿成 份何時被混合與研漿成份何時與晶圓接觸之間的時間期 間會因此大幅縮短。 在一第四實施例之中，相同的研漿是由上研漿分配 器122及下研漿分配器222被分配，並且由上研漿分配 器122及下研漿分配器222分配之研漿量可以是相同或 不同的。由下研漿分配器222被分配之研漿是較可能運 作於晶圓26之中心上，並因而易於在晶圓26之中心產 生一較好的研磨率。由上研漿分配器122被分配之研漿 是較可能運作於晶圓26之邊緣上，並因而易於在晶圓26 之邊緣產生一較好的研磨率。藉由預先破定被研磨晶圓 0503-A32537TWF/Hawdong 11 1.329343 之輪廓，由上研漿分配器122及下研漿分配器222分配 之研漿量可被調整，以獲致較均勻之晶圓表面。 • 化學機械研磨製程對於金屬（例如，銅）及對於非金屬 (例如，氧化物、氮化物及多孔低k值介電材料）有取決於 不同機構之傾向。金屬之化學機械研磨較依賴化學效應 (例如，氧化作用），而非金屬之化學機械研磨較依賴機械 效應（例如，磨耗作用）。如上所述，在一第五實施例之中， 比起具有機械效應之研漿成份，具有化學效應之研漿成 0 份是較佳地由一不同的分配器被分配。在一示範的實施 例之中，如果H2〇2(使銅氧化並因而軟化銅）是由下研漿 分配器222被分配，則一較快之化學機械研磨速率即可 被獲致。又，不同數量的H202可從下研漿分·配器222及 上研漿分配器122被分配，以進一步調整晶圓之輪廓。 去離子水可以從上研漿分配器122或/及下研漿分配 器222被分配。較佳地，在先前所述之實施例中，去離 φ 子水之分配不會以先前所述之標準來被分類。熟習此技 ' 術領域之人士當可了解去離子水之最佳分配位置。 在一第六實施例之中，研漿或研漿成份是被分類為 阻塞成份（其易於阻塞研磨墊30之溝槽）以及非阻塞成份 (其相對易於從研磨墊30上清除）。非阻塞成份之例子包 括，但不限於，稀釋研漿及溶液。阻塞成份之例子包括， 但不限於，腐蝕物質。較佳地，阻塞成份是由上研漿分 配器122被分配，而非阻塞成份是由下研漿分配器222 被分配。因此，研磨墊30會較不易發生阻塞。 0503-A32537TWF/Hawdong 12 L329343 在先前所述之實施例中，上研漿分配器122及下研 漿分配器222之分配可以使用一同步或非同步模式來進 行。在同步模式之中，研漿成份是同時由上研漿分配器 122及下研漿分配器222被分配。在非同步模式之中，研 漿成份是在不同的時間由上研漿分配器122及下研漿分 配器222被分配。由於一個以上分配器之存在，所採用 之模式會影響化學機械研磨製程之結果。舉例來說，為 了要研磨銅，過氧化氫（H2〇2)是被用於氧化，並因而軟化 銅表面。然後，氧化銅可被腐I虫劑移除。在另一方面， 銅腐蝕抑制劑苯三氮二烯伍圓（BTA)會降低化學機械研 磨之速率。因此，在一示範的實施例中，BTA是由下研 漿分配器222被分配，而H202是由上研漿分配器122被 分配。為了使化學機械研磨製程穩定，BTA及H202可以 非同步地被分配，其中，在H202由上研漿分配器122被 分配而降低化學機械研磨之速率前，BTA是由下研漿分 配器222被分配，並在晶圓26上運作一段時間。相反地， BTA可以由上研漿分配器122被分配，而H202可以由下 研漿分配器222被分配，以加快化學機械研磨之速率。 在此情形下，在BTA與H202分配間之時間會決定化學 機械研磨之速率。 分配系統需要定期的保養，亦即通常指的是預防保 養。在只具有一個研漿分配系統之一習知化學機械研磨 系統中，當研漿分配系統接受預防保養時，整個化學機 械研磨系統必須停止運作。然而，在具有兩個或更多個 0503-A32537TWF/Hawdong 1329343 研漿分配系統之化學機械研磨系統中，當一個研漿分配 系統接受預防保養時，其他的研漿分配系統仍能支援化 學機械研磨系統之運作。因此，化學機械研磨系統之利 用率會被提高。 第4圖係顯示具有一清潔系統320之一化學機械研 磨系統。在一實施例之中，清潔系統320包括有一閥328 及一幫浦324，閥328及幫浦324是連接於下研漿分配器 222。當下研漿分配系統220運作時，閥228會開啟以及 • 閥328會關閉。當清潔系統320運作時，閥328會開啟 以及閥228會關閉。清潔系統320可執行兩種功能。第 一，清潔系統320可分配清潔溶液至研磨墊30上。在具 有閥228及閥328之情形下，研漿儲存器226可不必淨 空來分配清潔溶液。第二，清潔系統320亦可將使用過 的研漿從研磨墊30上排除。在選擇性的實施例中，下研 漿分配系統220可具有來自於清潔系統320之一個別導 ^ 管，以及其個別構造是顯示於第5圖之中。 前述之較佳實施例只以兩個研漿分配器圖示，然 而，更多個研漿分配系統可以被加入，以配合化學機械 研磨製程之定做需求。附加的研漿分配系統之示範實施 例是繪示於第6圖之中。在一實施例之中，一第三研漿 分配器422是置於研磨墊30之上，並且第三研漿分配器 422及上研漿分配器122會分別將研漿分配至研磨墊30 上之不同點處。舉例來說，第三研漿分配器422與上研 漿分配器122是分別設置於研磨墊30之相對側邊上。在 0503-A32537TWF/Havvdong 14 1.329343 其他實施例之中，一第三研漿分配器522是相鄰於下研 漿分配器222,但第三研漿分配器522與下研漿分配器 222所分配之研漿（非預混）是不相同的。每一個第三研漿 分配器422及522可連接於如同上研漿分配器122或下 研漿分配器222所連接之一相同的研漿儲存器，因而可 如同上研漿分配器122或下研漿分配器222般分配相同 之研漿。可選擇地，每一個第三研漿分配器422及522 可連接於個別的研漿儲存器，並因而可分配不同於上研 漿分配器122及下研漿分配器222所分配之不同研漿。 雖然本發明已以較佳實施例揭露於上，然其並非用 以限定本發明，任何熟習此項技藝者，在不脫離本發明 之精神和範圍内，當可作些許之更動與潤飾，因此本發 明之保護範圍當視後附之申請專利範圍所界定者為準。1329343 IX. Description of the invention: [Technical field to which the invention pertains] The present invention relates to an integrated circuit manufacturing apparatus, and more particularly to a chemical mechanical polishing system. [Prior Art] Chemical mechanical polishing (CMP) is a general implementation of integrated circuit forming. In general, chemical mechanical polishing is a flattening process used in semiconductor wafers. Chemical mechanical polishing uses both physical and chemical forces to polish wafers. When the wafer is on a polishing pad, a load force is applied to the back side of a wafer. Next, when the slurry containing one of the corrosive and reactive chemicals passes underneath, the polishing pad and the wafer are reversed. Chemical mechanical polishing is an effective way to achieve planarization of the entire wafer. 1 is a conventional slurry distribution chemical mechanical polishing system including a polishing head 2, a film 4, a wafer 6, and a polishing pad 8. The wafer 6 is attached to the film 4, and the polishing pad 8 is in contact with the wafer 6 during the polishing process. The polishing pad 8 is attached to a platform 10, and the platform 10 is rotated at a fixed rotational speed. A slurry distribution system 12 can dispense the slurry to the upper surface of the polishing pad 8. The polishing head 2 moves back and forth between the center and the edge of the polishing pad 8. Due to the movement of the polishing head 2 and the polishing pad 8, the slurry is distributed between the wafer 6 and the polishing pad 8 via grooves (not shown) in the polishing pad 8. The chemicals and corrosive substances in the slurry can act on the wafer 6. However, it has been known that the disintegration of the chemical mechanical polishing system will have some disadvantages of 0503-A32537TWF/Hawdong 5 L329343. First, not all of the slurry is dispensed between the wafer 6 and the polishing pad 8. Therefore, a large part of the slurry will be wasted. Second, the slurry often flows from the edge of the wafer 6 to the underside, thereby causing the polishing at the edge of the wafer 6 to be more than the polishing at the center of the wafer 6. Figure 2 shows a conventional slurry distribution chemical mechanical polishing system. The lower slurry distribution chemical mechanical polishing system is similar to the upper slurry distribution chemical mechanical polishing system except that the slurry is dispensed via the lower dispensing system 14. The lower dispensing system 14 penetrates the polishing pad 8 and distributes the slurry in a manner similar to a fountain. Since the slurry can be directly dispensed between the wafer 6 and the polishing pad 8, the waste of the lower slurry distribution chemical mechanical polishing system is small. However, removing the used slurry can be quite difficult. In view of the above, it is an object of the present invention to provide a chemical mechanical polishing system that utilizes the advantages of existing chemical mechanical polishing systems to overcome the shortcomings of conventional chemical mechanical polishing systems. SUMMARY OF THE INVENTION The present invention basically employs the features detailed below in order to solve the above problems. That is, it is an object of the present invention to provide a chemical mechanical polishing system comprising a polishing pad; an upper slurry distribution system for dispensing at least one first deposition component of a slurry onto the polishing pad And having a first slurry storage device; and a slurry distribution system for dispensing at least one second slurry component of the slurry from a bottom of the polishing pad and via an opening in the polishing pad, And having 0503-A32537TWF/Hawdong 6 1329343 second slurry storage and according to the above purpose, the upper eight distribution system is synchronous and non-synchronously distributed to the second and: lower research and distribution. The second research slurry and the second research are based on the above purpose, and the bottom of the fish is covered with mt = ^^ money, from the grinding station. The cleaning system performs at least one tau Solution to the grinding ▲ The following work excludes a slurry. And from the polishing pad, according to the above object, the slurry of the first slurry and the koji _ sub-storage store the less expensive pulp component. * Even. . According to the above purpose, the first part of the first storage, the first part of the 兮M _ water storage system is stored in a mortar and sputum. The second part, and the first part and the second part are the meanings of the phantoms and the younger ones, the non-critical components of the first-slurry reservoir system 2, and the second research The key ingredients of the water. The research and storage system stores the same slurry according to the above purpose. The first slurry storage device stores the same slurry. According to the above purpose, the non-blocking component of the first researcher and the second slurry reservoir are water blocking components. In addition, according to the above purpose, the third slurry is used to dispense the slurry onto the polishing pad. A water distribution system, system 503-A32537TWF/Hawdong 7 1329343 Another object of the present invention is to provide a chemical mechanical polishing method comprising providing a polishing pad; providing a platform to support the pad and rotating the polishing pad; </ RTI> </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; Under the polishing pad, wherein the lower slurry distributor retains the bottom of the mattress, and the polishing pad is dispensed through at least one of the grinding and polishing components of the grinding through the opening in the polishing crucible. And according to the above object, the 'red (four) dispenser and the lower research and distribution device distribute the second-stage synchronous or non-synchronous distribution of the first-stage slurry component and the second research package, and according to the above purpose, the first-stage slurry component, and the second The slurry composition is a cheaper research and according to the above purpose, the research component of the first shell. Parts cannot be premixed. Research-injury and the second researcher's key ===^^份_研浆非 According to the above purpose, the key component. The blocking component' and the second researching (four) part are not according to the above purpose, the first, the "hydrophobic barrier component", the slurry component, and the second researching second, the system is mechanical effect The composition of the slurry. The research-component is a chemical effect research. According to the above purpose, the first portion is the same slurry composition. The water knows the second slurry into a crucible 5〇3-A32537TWF/Hawdong 8 1329343 According to the above object, further comprising connecting a cleaning system to the bottom of the polishing pad, wherein the cleaning system emits a cleaning solution onto the polishing pad, and the slurry is removed from the polishing pad. The method further comprises disposing an additional slurry distributor on the polishing pad to distribute the slurry onto the polishing pad. According to the above object, further comprising: placing an additional slurry distributor under the polishing pad to distribute the grinding In order to make the above-mentioned objects, features and advantages of the present invention more comprehensible, the preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Figure 3 is a schematic view showing a chemical mechanical polishing system of a preferred embodiment. A polishing head 22 is placed on a polishing pad 30. The polishing head 22 has a film 24, and The wafer 26 is attached to the film 24. The chemical mechanical polishing system includes two dispensing systems, namely an upper slurry distribution system 120 and a lower slurry distribution system 220. The upper slurry distribution system 120 has an upper slurry The distributor 122, a pump 124 and a slurry reservoir 126. The lower slurry distribution system 220 has a lower slurry distributor 222, a pump 224 and a slurry reservoir 226. The lower slurry distributor 222 is An opening passes through the polishing pad 30 and distributes the slurry upward onto the polishing pad 30. The lower slurry distributor 222 is coupled to a conduit 230. The conduit 230 extends below the polishing pad 30 and the conduit 230 is attached The slurry reservoir 226. The lower slurry distribution system 220 preferably has a valve 228, and the 0503-A32537TWF/Hawdong 9 1329343 valve 228 can be used to adjust the flow rate of the slurry and/or to open/close the slurry flow. Putting the slurry distribution system 120 down With the combination of the pulp distribution system 220, significant flexibility can be achieved and customized requirements for different grinding processes can be met, which will not only improve the quality of the grinding but also reduce the cost. For chemistry with dual dispensing systems In the case of a mechanical grinding system, the advantage is that the ingredients in the slurry can be classified into different groups and can be dispensed from different slurry distribution systems. In a first embodiment, the composition of the slurry is The key components and non-critical components are classified. Preferably, the non-critical components contain components that do not substantially affect the results of the chemical mechanical polishing, whether the non-critical components are from the upper slurry distributor 122 or the lower slurry distributor. 222 assigned. For example, non-critical ingredients may include a humic agent such as Si〇2 or ai2o3. The key components preferably include components that are important for the chemical mechanical polishing process, such as those used to increase polishing rate, corrosion control, and profile control. In an exemplary embodiment, the copper corrosion inhibitor benzotriazole diene (BTA) is classified as a critical component and is thus preferably dispensed from the lower slurry distributor 222. In a second embodiment, the ingredients of the slurry are classified as expensive and non-expensive. Preferably, non-expensive components (e.g., corrosive materials and H2〇2) are dispensed from the upper paddle distributor/distributor 122, while expensive components (e.g., BTA) are dispensed from the lower slurry distributor 222. . The slurry component dispensed from the lower slurry distributor 222 is less likely to be wiped away from the abrasive 前3 前 before being contacted with the wafer 26, and thus is less wasted. On the other hand, the slurry component dispensed from the upper slurry distributor 122 is more likely to be wasted. Some slurry ingredients cannot be premixed. For example, if the corrosive agent is premixed with the additive, the deposit will be produced in the slurry over time. In a third embodiment of the invention, these forms of slurry (which cannot be premixed) are preferably dispensed as individual components and then mixed onto the polishing pad 30. Since the slurry that cannot be premixed deteriorates over time, it can preferably be operated on the wafer for a short period of time after the slurry that cannot be premixed is mixed. However, if the slurry that cannot be premixed is dispensed by the same dispenser, it has been a long time before it comes into contact with the wafer 26. If the slurry components are dispensed from different dispensers, the different slurry components will remain unmixed until the polishing head 22 wipes through the different slurry components and mixes them. The time between when the slurry component is mixed and when the slurry component is in contact with the wafer is greatly reduced. In a fourth embodiment, the same slurry is dispensed from the upper slurry distributor 122 and the lower slurry distributor 222, and the slurry is distributed by the upper slurry distributor 122 and the lower slurry distributor 222. The amounts can be the same or different. The slurry dispensed by the lower slurry distributor 222 is more likely to operate on the center of the wafer 26 and thus tends to produce a better abrasive rate at the center of the wafer 26. The slurry dispensed by the upper slurry distributor 122 is more likely to operate on the edge of the wafer 26 and thus tends to produce a better abrasive rate at the edge of the wafer 26. By pre-breaking the outline of the ground wafer 0503-A32537TWF/Hawdong 11 1.329343, the amount of slurry dispensed from the upper slurry distributor 122 and the lower slurry distributor 222 can be adjusted to obtain a uniform wafer surface. . • Chemical mechanical polishing processes have a tendency to depend on different mechanisms for metals (eg, copper) and for non-metals (eg, oxides, nitrides, and porous low-k dielectric materials). Chemical mechanical polishing of metals relies on chemical effects (eg, oxidation), while chemical mechanical polishing of non-metals relies on mechanical effects (eg, wear). As described above, in a fifth embodiment, the slurry having a chemical effect is preferably dispensed by a different dispenser than the slurry component having a mechanical effect. In an exemplary embodiment, if H2〇2 (which oxidizes copper and thus softens the copper) is dispensed by the lower slurry distributor 222, a faster chemical mechanical polishing rate can be achieved. Also, a different number of H202 can be dispensed from the lower slurry distributor 222 and the upper slurry distributor 122 to further adjust the profile of the wafer. Deionized water can be dispensed from the upper slurry distributor 122 or/and the lower slurry distributor 222. Preferably, in the previously described embodiments, the allocation of the de-splitting water is not classified according to the criteria previously described. Those skilled in the art will be able to understand the optimal distribution of deionized water. In a sixth embodiment, the slurry or slurry component is classified as a blocking component which tends to block the grooves of the polishing pad 30 and a non-blocking component which is relatively easy to remove from the polishing pad 30. Examples of non-blocking ingredients include, but are not limited to, dilute the slurry and solution. Examples of blocking components include, but are not limited to, corrosive materials. Preferably, the blocking component is dispensed by the upper slurry distributor 122 and the non-blocking component is dispensed by the lower slurry distributor 222. Therefore, the polishing pad 30 is less likely to block. 0503-A32537TWF/Hawdong 12 L329343 In the previously described embodiment, the dispensing of the upper slurry distributor 122 and the lower slurry distributor 222 can be performed using a synchronous or non-synchronous mode. In the synchronous mode, the slurry component is dispensed by both the upper slurry distributor 122 and the lower slurry distributor 222. In the non-synchronous mode, the slurry components are dispensed from the upper slurry distributor 122 and the lower slurry distributor 222 at different times. Due to the presence of more than one dispenser, the mode employed will affect the results of the CMP process. For example, in order to grind copper, hydrogen peroxide (H2〇2) is used for oxidation and thus softens the copper surface. The copper oxide can then be removed by the rot. On the other hand, the copper corrosion inhibitor benzotriazole diene (BTA) reduces the rate of chemical mechanical polishing. Thus, in an exemplary embodiment, the BTA is dispensed by the lower slurry distributor 222 and the H202 is dispensed by the upper slurry distributor 122. In order to stabilize the chemical mechanical polishing process, BTA and H202 may be dispensed asynchronously, wherein the BTA is removed by the lower slurry distributor 222 before H202 is dispensed from the upper slurry distributor 122 to reduce the rate of chemical mechanical polishing. Distribute and operate on wafer 26 for a period of time. Conversely, the BTA can be dispensed from the upper slurry distributor 122 and the H202 can be dispensed from the lower slurry distributor 222 to speed up the rate of chemical mechanical polishing. In this case, the time between the BTA and H202 assignments determines the rate of chemical mechanical polishing. The distribution system requires regular maintenance, which is usually referred to as preventive maintenance. In a conventional chemical mechanical polishing system having only one slurry distribution system, when the slurry distribution system is subjected to preventive maintenance, the entire chemical mechanical polishing system must be stopped. However, in a chemical mechanical polishing system with two or more 0503-A32537TWF/Hawdong 1329343 slurry distribution systems, when a slurry distribution system is subjected to preventive maintenance, other slurry distribution systems can still support chemical mechanical polishing. The operation of the system. Therefore, the utilization rate of the chemical mechanical polishing system will be improved. Figure 4 shows a chemical mechanical polishing system having a cleaning system 320. In one embodiment, the cleaning system 320 includes a valve 328 and a pump 324 that is coupled to the lower slurry distributor 222. When the lower slurry distribution system 220 is in operation, the valve 228 will open and the valve 328 will close. When the cleaning system 320 is operating, the valve 328 will open and the valve 228 will close. The cleaning system 320 can perform two functions. First, the cleaning system 320 can dispense a cleaning solution onto the polishing pad 30. With valve 228 and valve 328, slurry reservoir 226 may not have to be empty to dispense the cleaning solution. Second, the cleaning system 320 can also remove used slurry from the polishing pad 30. In an alternative embodiment, the lower slurry distribution system 220 can have individual conduits from one of the cleaning systems 320, and the individual configurations thereof are shown in FIG. The foregoing preferred embodiment is illustrated with only two slurry distributors. However, more slurry distribution systems can be added to meet the customized requirements of the chemical mechanical polishing process. An exemplary embodiment of an additional slurry distribution system is shown in Figure 6. In one embodiment, a third slurry distributor 422 is placed on the polishing pad 30, and the third slurry distributor 422 and the upper slurry distributor 122 respectively distribute the slurry onto the polishing pad 30. The difference is. For example, the third slurry distributor 422 and the upper slurry distributor 122 are disposed on opposite sides of the polishing pad 30, respectively. In other embodiments, a third slurry distributor 522 is adjacent to the lower slurry distributor 222, but is distributed by the third slurry distributor 522 and the lower slurry distributor 222. The slurry (not premixed) is not the same. Each of the third slurry distributors 422 and 522 can be connected to the same slurry reservoir as the one of the upper slurry distributor 122 or the lower slurry distributor 222, and thus can be like the upper slurry distributor 122 or the lower The slurry distributor 222 is similarly dispensed with the same slurry. Alternatively, each of the third slurry distributors 422 and 522 can be coupled to an individual slurry reservoir and thus can be dispensed differently than the different slurry dispensed by the upper slurry distributor 122 and the lower slurry distributor 222. . Although the present invention has been disclosed in its preferred embodiments, it is not intended to limit the present invention, and it is possible to make some modifications and refinements without departing from the spirit and scope of the present invention. The scope of the invention is defined by the scope of the appended claims.
0503-A32537TWF/Hawdong 15 1.329343 【圖式簡單說明】 第1圖係顯示一種習知之上研漿分配化學機械研磨 糸統； 第2圖係顯示一種習知之下研漿分配化學機械研磨 系統； 第3圖係顯示具有一上研漿分配系統及一下研漿分 配系統之一化學機械研磨系統； 第4圖係顯示附著於化學機械研磨系統之一清潔系 統，其中，下研漿分配系統與清潔系統共用一共同導管； 第5圖係顯示附著於化學機械研磨系統之一清潔系 統，其中，下研漿分配系統與清潔系統具有個別的導管； 以及 第6圖係顯示附加之研漿分配系統之不同配置結構。 【主要元件符號說明】 2〜研磨頭； 6〜晶圓； 10〜平台； 14〜下分配系統； 24〜薄膜； 30〜研磨墊； 122〜上研漿分配器； 126〜研漿儲存器； 222〜下研漿分配器； 4〜薄膜； 8〜研磨塾； 12〜研漿分配系統； 22〜研磨頭； 26〜晶圓， 120〜上研漿分配系統 124〜幫浦； 220〜下研漿分配系統 224〜幫浦； 0503-A32537TWF/Hawdong 16 1.3293430503-A32537TWF/Hawdong 15 1.329343 [Simplified Schematic] Fig. 1 shows a conventional slurry distribution chemical mechanical polishing system; Fig. 2 shows a conventional slurry distribution chemical mechanical polishing system; The figure shows a chemical mechanical polishing system with an upper slurry distribution system and a lower slurry distribution system; the fourth figure shows a cleaning system attached to the chemical mechanical polishing system, wherein the lower slurry distribution system is shared with the cleaning system. a common conduit; Figure 5 shows a cleaning system attached to a chemical mechanical polishing system in which the lower slurry distribution system and the cleaning system have individual conduits; and Figure 6 shows the different configurations of the additional slurry distribution system structure. [Main component symbol description] 2 ~ polishing head; 6 ~ wafer; 10 ~ platform; 14 ~ lower distribution system; 24 ~ film; 30 ~ polishing pad; 122 ~ upper slurry distributor; 126 ~ slurry storage; 222~ under the slurry distributor; 4~ film; 8~ grinding 塾; 12~ slurry distribution system; 22~ polishing head; 26~ wafer, 120~ upper slurry distribution system 124~ gang; 220~ lower research Pulp distribution system 224 ~ pump; 0503-A32537TWF/Hawdong 16 1.329343
226〜研漿儲存器； 28〜閥； 230〜導管； 320〜清潔系統； 3 24〜幫浦； 3 2 8〜閥； 422、522〜第三研漿分配器。 0503-A32537TWF/Hawdong226 ~ slurry storage; 28 ~ valve; 230 ~ conduit; 320 ~ cleaning system; 3 24 ~ pump; 3 2 8 ~ valve; 422, 522 ~ third slurry distributor. 0503-A32537TWF/Hawdong