200807529 九、發明說明： 【發明所屬之技術領域】 本發明是有關於一種積體電路製造設備，特別是有 關於一種化學機械研磨系統。 【先前技術】 化學機械研磨（CMP)是一種積體電路成形之普遍施 行方式。一般來說，化學機械研磨是運用於半導體晶圓 _ 之平坦化製程。化學機械研磨同時利用物理及化學力來 研磨晶圓。當晶圓位於一研磨墊上時，一負載力是施加 於一晶圓之背面。接著，當含有腐蝕性及反應性化學藥 品之一研漿通過下方時，研磨墊與晶圓會反轉。化學機 械研磨是一種達成整個晶圓平坦化之有效方法。 、 第1圖係繪示一種習知之上研漿分配化學機械研磨 系統，其包括有一研磨頭2、一薄膜4、一晶圓6及一研 磨墊8。晶圓6是附著於薄膜4，而研磨墊8在研磨過程 中是與晶圓6接觸。研磨墊8是附著於一平台10，而平 台10是以一固定轉速旋轉。一研漿分配系統12可分配 研漿至研磨墊8之上表面。研磨頭2會前後移動於研磨 墊8之中心與邊緣之間◦由於研磨頭2及研磨墊8之移 動，研漿會經由研磨墊8中之溝槽（未顯示）分佈於晶圓6 與研磨墊8之間。研漿中之化學藥品及腐蝕物質即可在 晶圓6上產生作用。 然而，習知之上研漿分配化學機械研磨系統會具有 0503-A32537TWF/Hawdong 5 200807529 一些缺點。首先，並非所有的研漿都會分配於晶圓6與 研磨墊8之間。因此，一大部份的研漿將會被浪費掉。 其次，研漿常會從晶圓6之邊緣流至其下方，因而會使 得晶圓6邊緣處之研磨多於晶圓6中心處之研磨。 第2圖係顯示一種習知之下研漿分配化學機械研磨 系統。下研漿分配化學機械研磨系統乃是類似於上研漿 分配化學機械研磨系統，除了研漿是經由一下分配系統 14來被分配。下分配系統14是以類似噴泉之方式來穿透 ^ 研磨墊8及分配研漿。由於研漿能夠直接被分配到晶圓6 與研磨墊8之間，故下研漿分配化學機械研磨系統之浪 費情形較小。然而，要將使用過之研漿移除卻會是相當 困難的。 、 有鑑於此，本發明之目的是要提供一種化學機械研 、 磨系統，其可利用現存化學機械研磨系統之優點，以克 服習知化學機械研磨系統之缺點。 【發明内容】 本發明基本上採用如下所詳述之特徵以為了要解決 上述之問題。也就是說，本發明之一目的是要提供一種 化學機械研磨系統，其包括一研磨墊；一上研漿分配系 統，係用以分配一研漿之至少一第一研漿成份至該研磨 墊上，並且具有一第一研漿儲存器；以及一下研漿分配 系統，係用以從該研磨墊之底部及經由位於該研磨墊中 之一開口分配該研漿之至少一第二研漿成份，並且具有 0503-A32537TWF/Hawdong 6 200807529 一第二研漿儲存器。 又根據上述目的，該上研漿分配系統及該下研漿分 配系統係同步及非同步分配該第一研漿成份及該第二研 漿成份。 又根據上述目的，更包括一清潔系統，係從該研磨 墊之底部連接，其中，該清潔系統係執行至少一下列功 能：射出一清潔溶液至該研磨墊上；以及從該研磨墊上 排除一研漿。 ^ 又根據上述目的，該第一研漿儲存器係儲存較便宜 之研漿成份，以及該第二研漿儲存器係儲存較昂貴之研 漿成份。 又根據上述目的，該第一研漿儲存器係儲存一研漿 、 之一第一部份，該第二研漿儲存器係儲存該研漿之一第 、 二部份，以及該第一部份及該第二部份係無法被預混。 又根據上述目的，該第一研漿儲存器係儲存一研漿 Φ 之非關鍵成份，以及該第二研漿儲存器係儲存該研漿之 關鍵成份。 又根據上述目的，該第一研漿儲存器及該第二研漿 儲存器係儲存一相同研漿。 又根據上述目的，該第一研漿儲存器係儲存一研漿 之非阻塞成份，以及該第二研漿儲存器係儲存該研漿之 阻塞成份。 又根據上述目的，更包括一第三研漿分配系統，係 用以分配研漿至該研磨墊上。 0503-A32537TWF/Hawdong 7 200807529 本發明之另一目的是要提供一種化學機械研磨方 法，其包括提供一研磨墊；提供一平台，以支撐該研磨 墊及使該研磨墊旋轉；將一上研漿分配器設置於該研磨 墊之上，其中，該上研漿分配器係分配一研漿之至少一 第一研漿成份至該研磨墊上；以及將一下研漿分配器設 置於該研磨墊之下，其中，該下研漿分配器係從該研磨 墊之底部及經由位於該研磨墊中之一開口分配該研漿之 至少一第二研漿成份該研磨墊上。 ® 又根據上述目的，該上研漿分配器及該下研漿分配 器係同步或非同步分配該第一研漿成份及該第二研漿成 份。 又根據上述目的，該第一研漿成份係為較便宜之研 . 漿成份，以及該第二研漿成份係為較昂貴之研漿成份。 、 又根據上述目的，該第一研漿成份及該第二研漿成 份係無法被預混。 Φ 又根據上述目的，該第一研漿成份係為該研漿之非 關鍵成份，以及該第二研漿成份係為該研漿之關鍵成份。 又根據上述目的，該第一研漿成份係為該研漿之非 阻塞成份，以及該第二研漿成份係為該研漿之阻塞成份。 又根據上述目的，該第一研漿成份係為具機械效應 之研漿成份，以及該第二研漿成份係為具化學效應之研 漿成份。 又根據上述目的，該第一研漿成份及該第二研漿成 份係為相同之研漿成份。 0503-A32537TWF/Hawdong 8 200807529 又根據上述曰 的，更包括將一清潔系統連接於該研 磨墊之底部，复由 & ’该清潔系統係射出一清潔溶液至該 研碧上上Α及係從該研磨墊上排除該研漿。 又根據上述目沾 的，更包括將一附加研漿分配器設置 於该研磨塾之上 M分配研漿至該研磨墊上。200807529 IX. DESCRIPTION OF THE INVENTION: TECHNICAL FIELD The present invention relates to an integrated circuit manufacturing apparatus, and more particularly to a chemical mechanical polishing system. [Prior Art] Chemical mechanical polishing (CMP) is a general implementation of integrated circuit forming. In general, chemical mechanical polishing is applied to the planarization process of semiconductor wafers. Chemical mechanical polishing uses both physical and chemical forces to polish wafers. When the wafer is on a polishing pad, a load force is applied to the back side of a wafer. Next, when the slurry containing one of the corrosive and reactive chemicals passes underneath, the polishing pad and the wafer are reversed. Chemical mechanical polishing is an effective way to achieve planarization of the entire wafer. Figure 1 is a schematic view of a slurry distribution chemical mechanical polishing system comprising a polishing head 2, a film 4, a wafer 6 and a polishing pad 8. The wafer 6 is attached to the film 4, and the polishing pad 8 is in contact with the wafer 6 during the polishing process. The polishing pad 8 is attached to a platform 10, and the platform 10 is rotated at a fixed rotational speed. A slurry distribution system 12 can dispense the slurry to the upper surface of the polishing pad 8. The polishing head 2 will move back and forth between the center and the edge of the polishing pad 8. Due to the movement of the polishing head 2 and the polishing pad 8, the slurry will be distributed on the wafer 6 through the grooves (not shown) in the polishing pad 8 and grinding. Between pads 8. The chemicals and corrosive substances in the slurry can act on the wafer 6. However, conventionally, the slurry distribution chemical mechanical polishing system has some disadvantages of 0503-A32537TWF/Hawdong 5 200807529. First, not all of the slurry is dispensed between the wafer 6 and the polishing pad 8. Therefore, a large part of the slurry will be wasted. Second, the slurry often flows from the edge of the wafer 6 to the underside, thereby causing the polishing at the edge of the wafer 6 to be more than the polishing at the center of the wafer 6. Figure 2 shows a conventional slurry distribution chemical mechanical polishing system. The lower slurry distribution chemical mechanical polishing system is similar to the upper slurry distribution chemical mechanical polishing system except that the slurry is dispensed via the lower dispensing system 14. The lower dispensing system 14 penetrates the polishing pad 8 and distributes the slurry in a manner similar to a fountain. Since the slurry can be directly dispensed between the wafer 6 and the polishing pad 8, the waste of the lower slurry distribution chemical mechanical polishing system is small. However, removing the used slurry can be quite difficult. In view of the above, it is an object of the present invention to provide a chemical mechanical polishing system that utilizes the advantages of existing chemical mechanical polishing systems to overcome the shortcomings of conventional chemical mechanical polishing systems. SUMMARY OF THE INVENTION The present invention basically employs the features detailed below in order to solve the above problems. That is, it is an object of the present invention to provide a chemical mechanical polishing system comprising a polishing pad; an upper slurry distribution system for dispensing at least one first slurry component of a slurry onto the polishing pad And having a first slurry storage device; and a slurry distribution system for dispensing at least one second slurry component of the slurry from a bottom of the polishing pad and via an opening in the polishing pad, And has 0503-A32537TWF/Hawdong 6 200807529 a second slurry storage. According to the above object, the upper slurry distribution system and the lower slurry distribution system simultaneously and non-synchronously distribute the first slurry component and the second slurry component. According to the above object, further comprising a cleaning system connected from the bottom of the polishing pad, wherein the cleaning system performs at least one of the following functions: ejecting a cleaning solution onto the polishing pad; and removing a slurry from the polishing pad . Further, according to the above object, the first slurry reservoir stores a relatively inexpensive slurry component, and the second slurry reservoir stores a relatively expensive slurry component. According to the above object, the first slurry storage device stores a first portion of the slurry, and the second slurry storage device stores the first and second portions of the slurry, and the first portion. The portion and the second part cannot be premixed. According to the above object, the first slurry storage device stores a non-critical component of the slurry Φ, and the second slurry reservoir stores the key components of the slurry. According to the above object, the first slurry storage device and the second slurry storage device store the same slurry. According to the above object, the first slurry reservoir stores a non-blocking component of the slurry, and the second slurry reservoir stores the blocking component of the slurry. Further in accordance with the above objects, a third slurry distribution system is further included for dispensing slurry onto the polishing pad. 0503-A32537TWF/Hawdong 7 200807529 Another object of the present invention is to provide a chemical mechanical polishing method comprising: providing a polishing pad; providing a platform for supporting the polishing pad and rotating the polishing pad; a dispenser disposed on the polishing pad, wherein the upper slurry distributor dispenses at least one first slurry component of the slurry onto the polishing pad; and the lower slurry distributor is disposed under the polishing pad The lower slurry distributor is disposed on the polishing pad from the bottom of the polishing pad and through at least one second slurry component of the slurry disposed in one of the polishing pads. And in accordance with the above purpose, the upper slurry distributor and the lower slurry distributor distribute the first slurry component and the second slurry component synchronously or non-synchronously. According to the above object, the first slurry component is a relatively inexpensive slurry component, and the second slurry component is a relatively expensive slurry component. According to the above object, the first slurry component and the second slurry component cannot be premixed. Φ According to the above object, the first slurry component is a non-critical component of the slurry, and the second slurry component is a key component of the slurry. According to the above object, the first slurry component is a non-blocking component of the slurry, and the second slurry component is a blocking component of the slurry. Further, according to the above object, the first slurry component is a slurry component having a mechanical effect, and the second slurry component is a slurry component having a chemical effect. Further, according to the above object, the first slurry component and the second slurry component are the same slurry component. 0503-A32537TWF/Hawdong 8 200807529 Further according to the above, further comprising connecting a cleaning system to the bottom of the polishing pad, the & 'the cleaning system is to spray a cleaning solution to the upper and upper sides of the polishing pad and the system The slurry is removed from the polishing pad. Further, according to the above object, an additional slurry distributor is disposed on the polishing crucible to dispense the slurry onto the polishing pad.
又根據上述日A ㈢的，更包括將一附加研漿分配器設置 於该研磨塾之下 M分配研漿至該研磨墊上。 為使本發明> 播ητ-τ 4^^ 上迷目的、特徵和優點能更明顯易 憧，下文％舉軔社每a U只施例並配合所附圖式做詳細說明。 【實施方式】 餘配合圖式今日 、况明本發明之較佳實施例 第3圖係顯 示意圖。 示一較佳實施例之化學機械研磨系統之 研磨碩22是置於一研磨墊30之上。研磨頭 22具有一溥膜24，二 ^ ^ 而—晶圓26是附著於薄膜24之下。 化學機械研磨系綠〜上 死包括有兩個分配系統，亦即一上研漿 分配系統12〇及—^Further, according to the above-mentioned day A (c), the method further comprises disposing an additional slurry distributor under the grinding crucible to distribute the slurry onto the polishing pad. In order to make the present invention > ητ-τ 4^^ the above-mentioned fascination, features and advantages can be more obvious and easy, the following is a detailed description of each a U only example and with the accompanying drawings. [Embodiment] Fig. 3 is a schematic view showing a preferred embodiment of the present invention. A polishing master 22 of a chemical mechanical polishing system of a preferred embodiment is placed over a polishing pad 30. The polishing head 22 has a ruthenium film 24, and the wafer 26 is attached to the underside of the film 24. The chemical mechanical polishing system consists of two distribution systems, namely an upper slurry distribution system 12〇 and —^
下研漿分配系統220。上研漿分配系統 120具有一上研婿八I 唧水分配器I22、一幫浦I24及一研漿儲存 器126 〇下研聚公么 q、 刀配糸統220具有一下研漿分配器222、 奪浦22^及—研漿儲存器226。下研漿分配器222會經 由一開口牙過研磨墊3〇，並將研漿向上分配到研磨墊30 上。下研漿分配器222是連接於一導管23〇。導管23〇是 =2=二：之了，並且導管230是連接於研漿儲存 裔下研永刀配系、统220較佳地可具有-閥228,而 〇503-A32537TWF/Hawdong 9 200807529 閥228可用來調節研漿之流動速率及/或開啟/關閉研漿流 動。 在將上研漿分配系統120與下研漿分配系統220結 合在一起之情形下，顯著的靈活度可以達成以及對於不 同研磨製程之定做需求可以被滿足，此將不只能改善研 磨品質，尚還可降低成本。對於具有雙分配系統之化學 機械研磨系統而言，其優點是在於研漿中之成份可以被 分類成不同的群體，並可從不同的研漿分配系統分配出 去。 在一第一實施例之中，研漿之成份乃是被分類為關 鍵成份及非關鍵成份。較佳地，非關鍵成份包含了不會 使化學機械研磨之結果被實質影響的成份，不論非關鍵 成份是由上研漿分配器122或下研漿分配器222所分 配。舉例來說，非關鍵成份可包括有腐蝕劑，例如Si02 或ai2o3等物質。關鍵成份較佳地可包括有對於化學機械 研磨製程很重要之成份，例如用於增進研磨速率、腐蝕 控制及輪廓控制之成份。在一示範的實施例之中，銅腐 蝕抑制劑苯三氮二烯伍圓（BTA)是被分類為一種關鍵成 份，並因而較佳地是從下研漿分配器222所分配。 在一第二實施例之中，研漿之成份乃是被分類為昂 貴成份及非昂責成份。較佳地，非昂貴成份（例如，腐I虫 性物質及H202)是從上研漿分配器122被分配出，而昂貴 成份（例如，BTA)是從下研漿分配器222被分配出。從下 研漿分配器222被分配出之研漿成份在與晶圓26接觸前 0503-A32537TWF/Hawdong 10 200807529 是較不可能被擦離研磨墊30，因而較不會被浪費。在另 一方面，從上研漿分配器122被分配出之研漿成份則較 可能被浪費。 有一些研漿成份無法被預混。舉例來說，如果腐钱 劑與添加劑被預混，則在經過一段時間後，沉積物即會 產生於研漿之中。在本發明之一第三實施例之中，這些 形式的研漿（無法預混的）較佳地是以個別的成份被分 配，然後被混合於研磨墊30上。由於無法預混的研漿會 隨時間變差，故在無法預混的研漿被混合後，其可較佳 地在晶圓上運作一短暫之時間。然而，如果無法預混的 研漿是由同一個分配器所分配，則在其與晶圓26接觸前 即已過了較長的時間。如果研漿成份是由不同之分配器 . 所分配，則不同之研漿成份仍會維持未混合之狀態，直 •到研磨頭22擦過不同之研漿成份並將其混合。在研漿成 份何時被混合與研漿成份何時與晶圓接觸之間的時間期 φ 間會因此大幅縮短。 在一第四實施例之中，相同的研漿是由上研漿分配 器122及下研漿分配器222被分配，並且由上研漿分配 器122及下研漿分配器222分配之研漿量可以是相同或 不同的。由下研漿分配器222被分配之研漿是較可能運 作於晶圓26之中心上，並因而易於在晶圓26之中心產 生一較好的研磨率。由上研漿分配器122被分配之研漿 是較可能運作於晶圓26之邊緣上，並因而易於在晶圓26 之邊緣產生一較好的研磨率。藉由預先確定被研磨晶圓 0503-A32537TWF/Hawdong 11 200807529 之輪康’由上研浆分配器122及下研漿分配器222 之研漿量可被調整，以獲致較均句之晶圓表面。 化學機械研磨製程對於金屬（例如，銅）及對於非全屬 (例如’氧化物、氮化物及多孔低k值介電材料）有取決: 不同機構之傾向。金屬之化學機械研磨較依賴化學效應 (例如，氧化作用)，而非金屬之化學機械研磨較依賴機； 效應（例如，磨耗作用）。如上所述，在—第五實施例之中， 比起具有機械效應之研漿成份，具有化學效應之研聚成 份是較佳地由一不同的分配器被分配。在一示範的實施 例之中，如果h2〇2(使銅氧化並因而軟化銅）是由下研漿 分配器222被分配，則—較快之化學機械研磨速率即可 被獲致。又’不同數量的h2〇2可從下研漿分配器奶及 上研漿分配器122被分配，以進—步調整晶圓之輪靡。 抑去離子水可以從上研裝分配器122或/及下研裝分配 器222被分配。較佳地，在先前所述之實施例中，去離 子水之分料會以先前所述之標準來被分類。熟習此技 術領域之人士當可了解去離子水之最佳分配位置。 —在-第六實_之巾，臂或研㈣份是被分類為 阻基成份（其易於阻塞研磨塾3{)之溝槽）以及非阻塞成份 (其相對易於從研磨墊30上清除）。非阻塞成份之例子包 括’但不限於，稀釋研聚及溶液。阻塞成份之例子包括， 但不限於，腐蝕物質。較佳地，阻塞成份是由上研漿分 配器m被分配，而非阻塞成份是由下研漿分配器似 被分配。因此，研磨墊30會較不易發生阻塞。 〇503-A32537TWF/Hawdong 12 200807529 在先前所述之實施例中，上研漿分配器122及下研 漿分配器222之分配可以使用一同步或非同步模式來進 行。在同步模式之中，研漿成份是同時由上研漿分配器 122及下研漿分配器222被分配。在非同步模式之中，研 漿成份是在不同的時間由上研漿分配器122及下研漿分 配器222被分配。由於一個以上分配器之存在，所採用 之模式會影響化學機械研磨製程之結果。舉例來說，為 了要研磨銅，過氧化氫（H202)是被用於氧化，並因而軟化 銅表面。然後，氧化銅可被腐蝕劑移除。在另一方面， 銅腐蝕抑制劑苯三氮二烯伍圓（BTA)會降低化學機械研 磨之速率。因此，在一示範的實施例中，BTA是由下研 漿分配器222被分配，而11202是由上研漿分配器122被 分配。為了使化學機械研磨製程穩定，BTA及H202可以 非同步地被分配，其中，在H202由上研漿分配器122被 分配而降低化學機械研磨之速率前，BTA是由下研漿分 配器222被分配，並在晶圓26上運作一段時間。相反地， BTA可以由上研漿分配器122被分配，而H202可以由下 研漿分配器222被分配，以加快化學機械研磨之速率。 在此情形下’在BTA與H202分配間之時間會決定化學 機械研磨之速率。 、 分配系統需要定期的保養，亦即通常指的是預防保 養。在只具有一個研漿分配系統之一習知化學機械研磨 系統中，當研漿分配系統接受預防保養時，整個化學機 械研磨系統必須停止運作。然而，在具有兩個或更多個 0503-A32537TWF/Hawdong 13 200807529 研漿分配系統之化學機械研磨系統中，當一個研漿分配 系統接受預防保養時，其他的研漿分配系統仍能支援化 學機械研磨系統之運作。因此，化學機械研磨系統之利 用率會被提高。 第4圖係顯示具有一清潔系統320之一化學機械研 磨系統。在一實施例之中，清潔系統320包括有一閥328 及一幫浦324,閥328及幫浦324是連接於下研漿分配器 222。當下研漿分配系統220運作時，閥228會開啟以及 ^ 閥328會關閉。當清潔系統320運作時，閥328會開啟 以及閥228會關閉。清潔系統320可執行兩種功能。第 一，清潔系統320可分配清潔溶液至研磨墊30上。在具 有閥228及閥328之情形下，研漿儲存器226可不必淨 空來分配清潔溶液。第二，清潔系統320亦可將使用過 的研漿從研磨墊30上排除。在選擇性的實施例中，下研 漿分配系統220可具有來自於清潔系統320之一個別導 ^ 管，以及其個別構造是顯示於第5圖之中。 前述之較佳實施例只以兩個研漿分配器圖示，然 而，更多個研漿分配系統可以被加入，以配合化學機械 研磨製程之定做需求。附加的研漿分配系統之示範實施 例是繪示於第6圖之中。在一實施例之中，一第三研漿 分配器422是置於研磨墊30之上，並且第三研漿分配器 422及上研漿分配器122會分別將研漿分配至研磨墊30 上之不同點處。舉例來說，第三研漿分配器422與上研 漿分配器122是分別設置於研磨墊30之相對侧邊上。在 0503-A32537TWF/Hawdong 14 200807529 其他實施例之中，一第三研漿分配器522是相鄰於下研 漿分配器222,但第三研漿分配器522與下研漿分配器 222所分配之研漿（非預混）是不相同的。每一個第三研漿 分配器422及522可連接於如同上研漿分配器122或下 研漿分配器222所連接之一相同的研漿儲存器，因而可 如同上研漿分配器122或下研漿分配器222般分配相同 之研漿。可選擇地，每一個第三研漿分配器422及522 可連接於個別的研漿儲存器，並因而可分配不同於上研 ® 漿分配器122及下研漿分配器222所分配之不同研漿。 雖然本發明已以較佳實施例揭露於上，然其並非用 以限定本發明，任何熟習此項技藝者，在不脫離本發明 之精神和範圍内，當可作些許之更動與潤飾，因此本發 明之保護範圍當視後附之申請專利範圍所界定者為準。The slurry distribution system 220 is lowered. The upper slurry distribution system 120 has a top researcher I I water dispenser I22, a pump I24 and a slurry storage tank 126, and a knife distribution system 220 has a slurry slurry distributor 222, Capture the 22^ and the slurry storage 226. The lower slurry distributor 222 passes over the polishing pad 3 through an opening and distributes the slurry upward onto the polishing pad 30. The lower slurry distributor 222 is connected to a conduit 23A. The conduit 23 is = 2 = two: and the conduit 230 is connected to the slurry storage system, and the system 220 preferably has a valve 228, and the 〇503-A32537TWF/Hawdong 9 200807529 valve 228 can be used to adjust the flow rate of the slurry and/or to turn on/off the slurry flow. In the case where the upper slurry distribution system 120 and the lower slurry distribution system 220 are combined, significant flexibility can be achieved and customized requirements for different grinding processes can be satisfied, which will not only improve the grinding quality, but also Can reduce costs. For chemical mechanical polishing systems with dual distribution systems, the advantage is that the ingredients in the slurry can be classified into different groups and can be dispensed from different slurry distribution systems. In a first embodiment, the components of the slurry are classified as a key component and a non-critical component. Preferably, the non-critical ingredients comprise ingredients which do not substantially affect the results of the CMP, whether the non-critical ingredients are dispensed by the upper slurry distributor 122 or the lower slurry distributor 222. For example, non-critical components may include corrosive agents such as SiO 2 or ai 2 o 3 . The key components preferably include components that are important for the chemical mechanical polishing process, such as those used to increase polishing rate, corrosion control, and profile control. In an exemplary embodiment, the copper corrosion inhibitor benzotriazole diene (BTA) is classified as a critical component and is thus preferably dispensed from the lower slurry distributor 222. In a second embodiment, the ingredients of the slurry are classified as expensive and non-angular. Preferably, non-expensive ingredients (e.g., humic substances and H202) are dispensed from the upper slurry distributor 122, and expensive components (e.g., BTA) are dispensed from the lower slurry distributor 222. The slurry component dispensed from the lower slurry distributor 222 is less likely to be wiped away from the polishing pad 30 prior to contact with the wafer 26, and thus is less wasted. On the other hand, the slurry component dispensed from the upper slurry distributor 122 is more likely to be wasted. Some slurry ingredients cannot be premixed. For example, if the cortisol and the additive are premixed, the deposit will be produced in the slurry after a period of time. In a third embodiment of the invention, these forms of slurry (which cannot be premixed) are preferably dispensed as individual components and then mixed onto the polishing pad 30. Since the slurry that cannot be premixed deteriorates over time, it can preferably be operated on the wafer for a short period of time after the slurry that cannot be premixed is mixed. However, if the slurry that cannot be premixed is dispensed by the same dispenser, it has been a long time before it comes into contact with the wafer 26. If the slurry composition is dispensed by a different dispenser, the different slurry components will remain unmixed until the polishing head 22 wipes through the different slurry components and mixes them. The time period φ between when the slurry component is mixed and when the slurry component is in contact with the wafer is thus greatly reduced. In a fourth embodiment, the same slurry is dispensed from the upper slurry distributor 122 and the lower slurry distributor 222, and the slurry is distributed by the upper slurry distributor 122 and the lower slurry distributor 222. The amounts can be the same or different. The slurry dispensed by the lower slurry distributor 222 is more likely to operate on the center of the wafer 26 and thus tends to produce a better abrasive rate at the center of the wafer 26. The slurry dispensed by the upper slurry distributor 122 is more likely to operate on the edge of the wafer 26 and thus tends to produce a better abrasive rate at the edge of the wafer 26. The amount of slurry from the upper slurry distributor 122 and the lower slurry distributor 222 can be adjusted by predetermining the ground wafer 0503-A32537TWF/Hawdong 11 200807529 to obtain a more uniform wafer surface. . Chemical mechanical polishing processes are dependent on metals (e.g., copper) and on non-all genus (e.g., 'oxide, nitride, and porous low-k dielectric materials'): the tendency of different mechanisms. Chemical mechanical polishing of metals relies on chemical effects (eg, oxidation), while chemical mechanical polishing of non-metals relies on machine; effects (eg, abrasion). As described above, in the fifth embodiment, the chemically-developed polymerized component is preferably dispensed by a different dispenser than the slurry component having a mechanical effect. In an exemplary embodiment, if h2〇2 (which oxidizes copper and thus softens the copper) is dispensed by the lower slurry distributor 222, a faster chemical mechanical polishing rate can be achieved. Further, a different number of h2〇2 can be dispensed from the lower slurry dispenser milk and the upper slurry distributor 122 to further adjust the wafer rim. The deionized water can be dispensed from the upper research distributor 122 or/and the lower research distributor 222. Preferably, in the previously described embodiments, the fractionation of the deionized water will be classified according to the criteria previously described. Those skilled in the art will be able to understand the optimal distribution of deionized water. - in the sixth, the arm or the (four) part is a groove classified as a barrier component (which is easy to block the abrasive 塾 3{)) and a non-blocking component (which is relatively easy to remove from the polishing pad 30) . Examples of non-blocking ingredients include, but are not limited to, dilution polymerization and solutions. Examples of blocking components include, but are not limited to, corrosive materials. Preferably, the blocking component is dispensed by the upper slurry distributor m, and the non-blocking component is distributed by the lower slurry distributor. Therefore, the polishing pad 30 is less likely to block. 〇 503-A32537TWF/Hawdong 12 200807529 In the previously described embodiment, the dispensing of the upper slurry distributor 122 and the lower slurry distributor 222 can be performed using a synchronous or asynchronous mode. In the synchronous mode, the slurry component is dispensed by both the upper slurry distributor 122 and the lower slurry distributor 222. In the non-synchronous mode, the slurry components are dispensed from the upper slurry distributor 122 and the lower slurry distributor 222 at different times. Due to the presence of more than one dispenser, the mode employed will affect the results of the CMP process. For example, to grind copper, hydrogen peroxide (H202) is used to oxidize and thus soften the copper surface. The copper oxide can then be removed by the etchant. On the other hand, the copper corrosion inhibitor benzotriazole diene (BTA) reduces the rate of chemical mechanical polishing. Thus, in an exemplary embodiment, the BTA is dispensed by the lower slurry distributor 222 and the 11202 is dispensed by the upper slurry distributor 122. In order to stabilize the chemical mechanical polishing process, BTA and H202 may be dispensed asynchronously, wherein the BTA is removed by the lower slurry distributor 222 before H202 is dispensed from the upper slurry distributor 122 to reduce the rate of chemical mechanical polishing. Distribute and operate on wafer 26 for a period of time. Conversely, the BTA can be dispensed from the upper slurry distributor 122 and the H202 can be dispensed from the lower slurry distributor 222 to speed up the rate of chemical mechanical polishing. In this case, the time between the distribution of BTA and H202 will determine the rate of chemical mechanical polishing. The distribution system requires regular maintenance, which is usually referred to as preventive maintenance. In a conventional chemical mechanical polishing system having only one slurry distribution system, when the slurry distribution system is subjected to preventive maintenance, the entire chemical mechanical polishing system must be stopped. However, in a chemical mechanical polishing system with two or more 0503-A32537TWF/Hawdong 13 200807529 slurry distribution systems, when a slurry distribution system is subjected to preventive maintenance, other slurry distribution systems can still support chemical machinery. The operation of the grinding system. Therefore, the utilization rate of the chemical mechanical polishing system will be improved. Figure 4 shows a chemical mechanical polishing system having a cleaning system 320. In one embodiment, the cleaning system 320 includes a valve 328 and a pump 324 that is coupled to the lower slurry distributor 222. When the slurry distribution system 220 is in operation, the valve 228 will open and the valve 328 will close. When the cleaning system 320 is operating, the valve 328 will open and the valve 228 will close. The cleaning system 320 can perform two functions. First, the cleaning system 320 can dispense a cleaning solution onto the polishing pad 30. With valve 228 and valve 328, slurry reservoir 226 may not have to be empty to dispense the cleaning solution. Second, the cleaning system 320 can also remove used slurry from the polishing pad 30. In an alternative embodiment, the lower slurry distribution system 220 can have individual conduits from one of the cleaning systems 320, and the individual configurations thereof are shown in FIG. The foregoing preferred embodiment is illustrated with only two slurry distributors. However, more slurry distribution systems can be added to meet the customized requirements of the chemical mechanical polishing process. An exemplary embodiment of an additional slurry distribution system is shown in Figure 6. In one embodiment, a third slurry distributor 422 is placed on the polishing pad 30, and the third slurry distributor 422 and the upper slurry distributor 122 respectively distribute the slurry onto the polishing pad 30. The difference is. For example, the third slurry distributor 422 and the upper slurry distributor 122 are disposed on opposite sides of the polishing pad 30, respectively. In other embodiments, 0503-A32537TWF/Hawdong 14 200807529, a third slurry distributor 522 is adjacent to the lower slurry distributor 222, but is distributed by the third slurry distributor 522 and the lower slurry distributor 222. The slurry (not premixed) is not the same. Each of the third slurry distributors 422 and 522 can be connected to the same slurry reservoir as the one of the upper slurry distributor 122 or the lower slurry distributor 222, and thus can be like the upper slurry distributor 122 or the lower The slurry distributor 222 is similarly dispensed with the same slurry. Alternatively, each of the third slurry distributors 422 and 522 can be coupled to an individual slurry reservoir and thus can be dispensed differently than the different distributions of the upper and lower slurry distributors 122 and 222. Pulp. Although the present invention has been disclosed in its preferred embodiments, it is not intended to limit the present invention, and it is possible to make some modifications and refinements without departing from the spirit and scope of the present invention. The scope of the invention is defined by the scope of the appended claims.
0503-A32537TWF/Hawdong 15 200807529 【圖式簡單說明】 第1圖係顯示一種習知之上研漿分配化學機械研磨 系統； 第2圖係顯示一種習知之下研漿分配化學機械研磨 糸統， 第3圖係顯示具有一上研漿分配系統及一下研漿分 配系統之一化學機械研磨系統； 第4圖係顯示附著於化學機械研磨系統之一清潔系 統，其中，·下研漿分配系統與清潔系統共用一共同導管； 第5圖係顯示附著於化學機械研磨系統之一清潔系 統，其中，下研漿分配系統與清潔系統具有個別的導管； 以及 第6圖係顯示附加之研漿分配系統之不同配置結構。 【主要元件符號說明】 2〜研磨頭； 6〜晶圓； 10〜平台； 14〜下分配系統； 24〜薄膜； 3〇〜研磨墊； 122〜上研漿分配器； 126〜研漿儲存器； 222〜下研漿分配器； 4〜薄膜； 8〜研磨塾； 12〜研漿分配系統； 22〜研磨頭； 2 6〜晶圓， 120〜上研漿分配系統； 124〜幫浦； 220〜下研漿分配系統； 224〜幫浦； 0503-A32537TWF/Hawdong 16 200807529 226〜研漿儲存器； 2 8〜閥； 230〜導管； 320〜清潔系統 324〜幫浦； 328〜閥； 422、522〜第三研漿分配器。 0503-A32537TWF/Hawdong 170503-A32537TWF/Hawdong 15 200807529 [Simplified Schematic] Fig. 1 shows a conventional slurry distribution chemical mechanical polishing system; Fig. 2 shows a conventional slurry distribution chemical mechanical polishing system, 3rd The figure shows a chemical mechanical polishing system with an upper slurry distribution system and a lower slurry distribution system; the fourth figure shows a cleaning system attached to a chemical mechanical polishing system, wherein, the lower slurry distribution system and the cleaning system Sharing a common conduit; Figure 5 shows a cleaning system attached to a chemical mechanical polishing system in which the lower slurry distribution system and the cleaning system have individual conduits; and Figure 6 shows the difference between the additional slurry distribution systems Configuration structure. [Main component symbol description] 2 ~ polishing head; 6 ~ wafer; 10 ~ platform; 14 ~ lower distribution system; 24 ~ film; 3 〇 ~ polishing pad; 122 ~ upper slurry distributor; 126 ~ slurry storage ; 222 ~ under the slurry distributor; 4 ~ film; 8 ~ grinding 塾; 12 ~ slurry distribution system; 22 ~ grinding head; 2 6 ~ wafer, 120 ~ on the slurry distribution system; 124 ~ pump; 220 ~ under the slurry distribution system; 224 ~ pump; 0503-A32537TWF / Hawdong 16 200807529 226 ~ slurry storage; 2 8 ~ valve; 230 ~ conduit; 320 ~ cleaning system 324 ~ pump; 328 ~ valve; 522~3rd slurry distributor. 0503-A32537TWF/Hawdong 17