CN101347923B - Method and apparatus for improving insufficiency of wafer grinding and thick thickness - Google Patents
Method and apparatus for improving insufficiency of wafer grinding and thick thickness Download PDFInfo
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- CN101347923B CN101347923B CN2007100440586A CN200710044058A CN101347923B CN 101347923 B CN101347923 B CN 101347923B CN 2007100440586 A CN2007100440586 A CN 2007100440586A CN 200710044058 A CN200710044058 A CN 200710044058A CN 101347923 B CN101347923 B CN 101347923B
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Abstract
The invention relates to a method for solving the problems of deficiency of wafer grinding and the large thickness of a wafer, and a device thereof. In the invention, two control valves are additionally arranged between a control valve group and a Godzilla system, and thus, the Godzilla system is controlled jointly by a first grinding disk, a second grinding disk and a third grinding disk, that is, the Godzilla system starts to jet water only when the first grinding disk, the second grinding disk and the third grinding disk stop grinding. By using the invention, the problems of the deficiency of wafer grinding and the great thickness of a wafer can be effectively solved. Therefore, the yield is increased, and the labor and material resources are saved.
Description
Technical field
The present invention relates to semiconductor technology processing procedure field, particularly relate to a kind of method and device that improves insufficiency of wafer grinding and thick thickness.
Background technology
Be as described in 02131650.3 the application documents as application number, along with the trend development of integrated circuit component towards small and dense collection, a kind of metal interconnecting layer and dielectric materials of most layers of utilizing contacted each semiconductor element on the semiconductor chip each other, and finish the multi-metal processing procedure (Multilevel MetallizationProcess) of the loop framework that overall stack dissolves, be widely used in already on the VLSI/ULSI processing procedure, on silicon, to form more multi-layered inferior framework.Yet these metal wires and semiconductor element can make integrated circuit surface present the precipitous physical features (Severe Topography) that height rises and falls, and increase follow-up the deposition or difficulty during design transfer (Pattern Transfer) processing procedure.Therefore the profile of the sedimentary deposit of chip surface protrusion and height fluctuating all must utilize a planarization processing procedure (Planarization Process) to be removed.
Present most widely used global planarization technology is chemical mechanical milling method (Chemical Mechanical Polishing is called for short CMP).Chemical mechanical milling method mainly is a mechanical polishing principle of utilizing similar " sharpening ", cooperate the chemical assistant (Chemical Additives) in the lapping liquid (Slurry) to react with chip surface, with the yo-yo profile of chip surface height, the planarization that is polished in the lump.
Yet, in CMP technology, often having certain wafer through behind the grinding technics, its thickness substantially exceeds the goal-selling value.
Nowadays, Godzilla system 8 has obtained extensive use in semiconductor packages factory.The Godzilla system is grinding system inner high voltage water cleaning systems, and function is finished to grind for head in grinding system and afterwards grinding system cleaned.The Godzilla system can prevent grinding agent to cause scuffing to wafer at system's intercrystalline, thereby has influence on the quality of product.
Fig. 1 is the principle schematic of prior art.As shown in the figure, 1 is first abrasive disk; 2 is second abrasive disk; 3 is the 3rd abrasive disk; 8 is the Godzilla system; 5 is first control valve, by 3 controls of the 3rd abrasive disk, i.e. first control valve, 5 conductings when the 3rd abrasive disk 3 stops to grind; 6 is second control valve, by 2 controls of second abrasive disk, i.e. second control valve, 6 conductings when second abrasive disk 2 stops to grind; 7 is the 3rd control valve, by 1 control of first abrasive disk, i.e. the 3rd control valve 7 conductings when first abrasive disk 1 stops to grind; 4 is the Godzilla control valve, and the startup of control Godzilla system 8 links to each other with the 3rd control valve 6.Because control valve 6 is by 2 controls of second abrasive disk, promptly Godzilla system 8 is controlled by second abrasive disk.
By continuous observation, we find that in CMP technology the board initial setting is generally the Godzilla system by 2 controls of second abrasive disk.Formula time set as fruit product is that second abrasive disk 2 is longer than first abrasive disk 1 or the 3rd abrasive disk 3, and then process of lapping is not influenced by the water spray of Godzilla system 8.Formula time set as fruit product is that second abrasive disk 2 is shorter than first abrasive disk 1 or the 3rd abrasive disk 3, because second abrasive disk 2 finishes to start Godzilla system 8 immediately and sprays water, and first abrasive disk 1 or the 3rd abrasive disk 3 do not finish, and then lapping liquid will inevitably be by the water dilution by 8 ejections of Godzilla system on the abrasive disk 1.
The dilution of lapping liquid can directly cause the reduction of removal rates, and it is excessive promptly to cause wafer to grind not enough thickness; Grind the partially thick meeting of not enough wafer thickness and cause scrapping of product or need grinding again, wasted human and material resources.
Summary of the invention
Above-mentioned in order to solve because the excessive problem of wafer thickness of the diluted appearance of lapping liquid proposes a kind of method and device that improves insufficiency of wafer grinding and thick thickness, can improve the excessive problem of wafer thickness effectively.
The present invention controls the water spraying time of Godzllla jointly by making first abrasive disk, second abrasive disk, the 3rd abrasive disk, has guaranteed the concentration of lapping liquid, has solved wafer effectively and has ground the excessive problem of not enough thickness; The present invention has improved grinding rate and yield rate, has saved human and material resources.
Description of drawings
Fig. 1 is the principle schematic of prior art;
Fig. 2 is the principle schematic of Pneumatic valve;
Fig. 3 is the principle schematic with valve;
Fig. 4 is the principle of the invention schematic diagram that adopts Pneumatic valve;
Fig. 5 is the principle of the invention schematic diagram of employing and valve.
The specific embodiment
Below in conjunction with the drawings and specific embodiments the present invention is elaborated.
Fig. 2 is the principle schematic of Pneumatic valve.As shown in Figure 2, Pneumatic valve has 3 ports, is respectively port A, port B, port C.Have only in the time of described port A and port B conducting simultaneously just conducting, i.e. port C conducting of Pneumatic valve.
Fig. 3 is the principle schematic with valve.As shown in Figure 3,3 ports are arranged, be respectively port D, port E, port F with valve.Have only in the time of described port D and port E conducting simultaneously, with just conducting, i.e. port F conducting of valve.
The first embodiment of the present invention is to utilize Pneumatic valve control.
Fig. 4 is the principle of the invention schematic diagram that adopts Pneumatic valve.As shown in the figure, 1 is first abrasive disk; 2 is second abrasive disk; 3 is the 3rd abrasive disk; 8 is the Godzilla system; 5 is first control valve, by 3 controls of the 3rd abrasive disk, i.e. first control valve, 5 conductings when the 3rd abrasive disk 3 stops to grind; 6 is second control valve, by 2 controls of second abrasive disk, i.e. second control valve, 6 conductings when second abrasive disk 2 stops to grind; 7 is the 3rd control valve, by 1 control of first abrasive disk, i.e. the 3rd control valve 7 conductings when first abrasive disk 1 stops to grind; 4 is the Godzilla control valve, the startup of control Godzilla system 8.9 is first Pneumatic valve, and A end, the B end of described first Pneumatic valve 9 link to each other with first control valve 5, second Pneumatic valve 6 respectively.10 is second Pneumatic valve, and the A end of described second Pneumatic valve 10, B end, C end link to each other with C end, the 3rd control valve 7, the Godzilla control valve 4 of first Pneumatic valve 9 respectively.Therefore, have only when second abrasive disk 2 and the 3rd abrasive disk 3 all stop to grind simultaneously the 9 just conductings of first Pneumatic valve; Have only when first abrasive disk 1 stops grinding and 9 conductings of first Pneumatic valve, promptly have only when first abrasive disk 1, second abrasive disk 2 and the 3rd abrasive disk 3 stop to grind simultaneously, Godzilla system 8 cleaning of spraying water is opened in the just conductings of second Pneumatic valve 10 simultaneously.
The second embodiment of the present invention is to utilize and valve control.
Fig. 5 is the principle of the invention schematic diagram of employing and valve.As shown in the figure, 1 is first abrasive disk; 2 is second abrasive disk; 3 is the 3rd abrasive disk; 8 is the Godzilla system; 5 is first control valve, by 3 controls of the 3rd abrasive disk, i.e. first control valve, 5 conductings when the 3rd abrasive disk 3 stops to grind; 6 is second control valve, by 2 controls of second abrasive disk, i.e. second control valve, 6 conductings when second abrasive disk 2 stops to grind; 7 is the 3rd control valve, by 1 control of first abrasive disk, i.e. the 3rd control valve 7 conductings when first abrasive disk 1 stops to grind; 4 is the Godzilla control valve, the startup of control Godzilla system 8.11 is first and valve, and described first links to each other with first control valve 5, second Pneumatic valve 6 respectively with D end, the E end of valve 11.12 is second and valve, and described second links to each other with F end, the 3rd control valve 7, the Godzilla control valve 4 of valve 11 with first respectively with D end, E end, the F end of valve 12.Therefore, have only when second abrasive disk 2 and the 3rd abrasive disk 3 all stop to grind simultaneously, first with valve 11 just conductings; Have only when first abrasive disk 1 and stop to grind and first and during valve 11 conductings, promptly have only when first abrasive disk 1, second abrasive disk 2 and the 3rd abrasive disk 3 stop to grind simultaneously, second with just conductings of valve 12, open Godzilla system 8 cleaning of spraying water simultaneously.
Therefore, the present invention has avoided effectively because of Godzilla system 8 sprays water when abrasive disk does not stop to grind, and the lapping liquid that causes is diluted, and promptly wafer grinds the excessive problem of not enough thickness.
The above is the specific embodiment of the present invention only, and is not used in qualification the present invention.Any the present invention is done replacement well know in the art, combination, discrete all should being included within protection scope of the present invention.
Claims (1)
1. device that improves insufficiency of wafer grinding and thick thickness, its structure comprises at least: first abrasive disk, second abrasive disk, the 3rd abrasive disk, first control valve (5), second control valve (6), the 3rd control valve (7), grinding system inner high voltage water cleaning systems, grinding system inner high voltage water cleaning systems control valves (4) is characterized in that: increase by two control valves between control valve group and described grinding system inner high voltage water cleaning systems control valve, described control valve group comprises described first control valve (5), described second control valve (6), described the 3rd control valve (7); And
Described two control valves are two Pneumatic valves, each Pneumatic valve has 3 ports, be respectively port A, port B, port C, have only in the time of described port A and port B conducting simultaneously, just conducting of Pneumatic valve, it is port C conducting, A end, the B end of first Pneumatic valve (9) link to each other with described first control valve (5), described second control valve (6) respectively, and the A end of second Pneumatic valve (10), B end, C end link to each other with C end, described the 3rd control valve (7), the described grinding system inner high voltage water cleaning systems control valves (4) of described first Pneumatic valve (9) respectively; Or described two control valves are two and valve, each and valve have 3 ports, be respectively port D, port E, port F, have only in the time of described port D and port E conducting simultaneously, with just conducting of valve, it is port F conducting, first links to each other with described first control valve (5), described second control valve (6) respectively with the D of valve (11) end, E end, second holds with D end, the E of valve (12), F holds and link to each other with F end, described the 3rd control valve (7), the described grinding system inner high voltage water cleaning systems control valves (4) of valve (11) with described first respectively.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2007100440586A CN101347923B (en) | 2007-07-20 | 2007-07-20 | Method and apparatus for improving insufficiency of wafer grinding and thick thickness |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2007100440586A CN101347923B (en) | 2007-07-20 | 2007-07-20 | Method and apparatus for improving insufficiency of wafer grinding and thick thickness |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101347923A CN101347923A (en) | 2009-01-21 |
| CN101347923B true CN101347923B (en) | 2010-11-17 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN2007100440586A Active CN101347923B (en) | 2007-07-20 | 2007-07-20 | Method and apparatus for improving insufficiency of wafer grinding and thick thickness |
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|---|---|
| CN (1) | CN101347923B (en) |
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| CN101347923A (en) | 2009-01-21 |
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