CN115890456A - Polishing liquid supply device, polishing equipment and polishing method - Google Patents
Polishing liquid supply device, polishing equipment and polishing method Download PDFInfo
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- CN115890456A CN115890456A CN202211709077.7A CN202211709077A CN115890456A CN 115890456 A CN115890456 A CN 115890456A CN 202211709077 A CN202211709077 A CN 202211709077A CN 115890456 A CN115890456 A CN 115890456A
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- polishing
- edge
- polishing pad
- pad
- nozzles
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- 238000005498 polishing Methods 0.000 title claims abstract description 317
- 239000007788 liquid Substances 0.000 title claims abstract description 97
- 238000000034 method Methods 0.000 title claims abstract description 11
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 61
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 61
- 239000010703 silicon Substances 0.000 claims abstract description 61
- 238000005507 spraying Methods 0.000 claims abstract description 5
- 239000002002 slurry Substances 0.000 description 8
- 239000007921 spray Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 230000002542 deteriorative effect Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000007517 polishing process Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000012141 concentrate Substances 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
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Abstract
The present disclosure relates to a polishing liquid supply device for supplying a polishing liquid to a polishing pad in polishing and including a nozzle structure provided with a plurality of nozzles arranged respectively for spraying the polishing liquid to different positions of the polishing pad in a radial direction and configured such that a polishing removal capability of the polishing liquid sprayed to a center and an edge of the polishing pad is smaller than a polishing removal capability of the polishing liquid sprayed to an intermediate region of the polishing pad between the center and the edge, a polishing apparatus, and a polishing method. By the polishing solution providing device, the polishing equipment and the polishing method, the flatness of the surface of the silicon wafer is improved.
Description
Technical Field
The present disclosure relates to the field of semiconductor processing and manufacturing technologies, and in particular, to a polishing liquid supply device, a polishing apparatus, and a polishing method.
Background
With the continuous development of semiconductor technology, the requirement for the flatness of the surface of a silicon wafer is higher and higher. In the silicon wafer manufacturing process, the flatness of the silicon wafer can be improved by a polishing process. The polishing process generally includes a double-side polishing step of polishing both front and back sides of the silicon wafer and a final polishing step of polishing only the front side of the silicon wafer.
In the final polishing, the silicon wafer adsorbed to the polishing head is pressed against a polishing pad arranged below the polishing head to polish the front surface of the silicon wafer by means of the polishing pad, wherein the silicon wafer and the polishing pad are always in rotation at the time of polishing.
However, due to the centrifugal effect caused by rotation, polishing liquid is easy to gather at the edge of the silicon wafer, so that the polishing degree of the edge of the silicon wafer is larger than that of the center of the silicon wafer; and since the silicon wafer is pressed against the polishing pad, the polishing pad is compressively deformed and exerts a large action on the outer edge of the silicon wafer near the chamfer, and also exerts a stronger polishing action on the edge of the silicon wafer with respect to the center of the silicon wafer, which causes the thickness of the edge of the silicon wafer to be thinner than that of the center of the silicon wafer, thereby deteriorating the flatness of the surface of the silicon wafer.
Disclosure of Invention
This section provides a general summary of the disclosure, and is not a comprehensive disclosure of its full scope or all of its features.
The purpose of this disclosure is to provide a polishing solution supply device capable of reducing the degree of polishing and grinding of a silicon wafer edge.
In order to achieve the above object, according to one aspect of the present disclosure, there is provided a polishing liquid supply apparatus for supplying a polishing liquid to a polishing pad in polishing, including a nozzle structure provided with a plurality of nozzles arranged to respectively spray the polishing liquid to different positions of the polishing pad in a radial direction, and configured such that polishing removal capacities of the polishing liquids sprayed to a center and an edge of the polishing pad are smaller than a polishing removal capacity of the polishing liquid sprayed to an intermediate region of the polishing pad between the center and the edge.
In the above polishing liquid supply apparatus, the nozzle structure may include a nozzle, wherein the plurality of nozzles are disposed on the nozzle in an extending direction of the nozzle.
In the above polishing liquid supply apparatus, the nozzle structure may include a plurality of nozzles, wherein each of the plurality of nozzles is provided with one of the plurality of nozzles.
In the above polishing liquid supply apparatus, the plurality of nozzles may be independent of each other.
In the above polishing liquid supply apparatus, each of the plurality of nozzles extends from a position corresponding to the center of the polishing pad to a position corresponding to the edge of the polishing pad, and the plurality of nozzles are spaced apart from each other corresponding to the circumferential direction of the polishing pad.
In the above polishing liquid supply apparatus, the plurality of nozzles are configured to make the polishing removal capability of the polishing liquid ejected toward the center and the edge of the polishing pad smaller than the polishing removal capability of the polishing liquid ejected toward the middle region of the polishing pad between the center and the edge by ejecting the polishing liquid at different flow rates.
In the above polishing liquid supply apparatus, the plurality of nozzles are configured to make the polishing removal capability of the polishing liquid sprayed toward the center and the edge of the polishing pad smaller than the polishing removal capability of the polishing liquid sprayed toward an intermediate region of the polishing pad between the center and the edge by spraying the polishing liquid of different concentrations or different temperatures.
According to another aspect of the present disclosure, there is provided a polishing apparatus including:
the polishing solution supply apparatus according to any one of the preceding paragraphs;
a polishing head for holding a silicon wafer to be polished; and
and a polishing pad disposed below the polishing head for polishing the silicon wafer contacted with the polishing pad by the polishing head by the polishing liquid supplied to the polishing pad by the polishing liquid supply means.
According to still another aspect of the present disclosure, there is provided a polishing method performed using the polishing apparatus described in the preceding paragraph, the polishing method including:
supplying a polishing liquid to the polishing pad by a polishing liquid supply device so that the polishing removal capacity of the polishing liquid sprayed toward the center and the edge of the polishing pad is smaller than that of the polishing liquid sprayed toward the middle region of the polishing pad; and
the silicon wafer to be polished is brought into contact with a polishing pad by a polishing head to polish the silicon wafer.
According to the present disclosure, by providing the nozzle structure with the plurality of nozzles arranged for jetting the polishing liquid to different positions of the polishing pad in the radial direction, respectively, and configured such that the polishing removal capability of the polishing liquid jetted to the center and the edge of the polishing pad is smaller than that of the polishing liquid jetted to the intermediate region of the polishing pad between the center and the edge, the polishing removal amount of the silicon wafer occurring at the edge of the central annular region and the edge annular region of the polishing pad at a high frequency is reduced relative to the polishing removal amount of the silicon wafer occurring at the center of the intermediate annular region at a high frequency, thereby reducing the difference between the degree of polishing at the edge of the silicon wafer and the degree of polishing at the center of the silicon wafer, thereby improving the overall flatness of the silicon wafer.
The above features and advantages and other features and advantages of the present disclosure will be more apparent from the following detailed description of exemplary embodiments thereof, which is to be read in connection with the accompanying drawings.
Drawings
FIG. 1 is a top plan view of a polishing apparatus according to an embodiment of the present disclosure, wherein a silicon wafer is shown under polishing;
FIG. 2 is a side plan view of the polishing apparatus shown in FIG. 1; and
FIG. 3 is a top plan view of a polishing apparatus according to another embodiment of the present disclosure, showing a silicon wafer under polishing.
Detailed Description
The disclosure is described in detail below with the aid of exemplary embodiments with reference to the accompanying drawings. It is to be noted that the following detailed description of the present disclosure is intended for purposes of illustration only and is not intended to limit the present disclosure in any way.
As mentioned previously, during polishing, the polishing pad and the wafer are rotated, for example, in the same direction, and the resulting centrifugal effect tends to concentrate the polishing liquid at the edge of the wafer, resulting in a greater degree of polishing at the edge of the wafer than at the center of the wafer; further, the polishing pad exerts a large effect on the outer edge of the silicon wafer near the chamfer due to plastic deformation upon contact with the silicon wafer, and also causes a large degree of polishing of the silicon wafer edge compared to the center of the silicon wafer, thereby deteriorating the flatness of the silicon wafer surface.
In order to solve the above problems, it is necessary to eliminate or at least reduce the difference between the degree of polishing at the edge of the wafer and the degree of polishing at the center of the wafer.
The inventors have noted that, first, during polishing, the edge of the silicon wafer may appear at high frequency in the central annular region and the edge annular region of the polishing pad, and the center of the silicon wafer may appear at high frequency in the intermediate annular region of the polishing pad between the central annular region and the edge annular region; furthermore, in addition to the above-described situation where the slurry is concentrated toward the edge of the polishing pad due to the centrifugal force, since the spout supplying the slurry is generally located above the center of the polishing pad, the center of the polishing pad tends to maintain more slurry with respect to the middle region of the polishing pad between the center and the edge.
Based on this, according to an aspect of the present disclosure, as shown in fig. 1 to 3, there is provided a polishing liquid supply apparatus for supplying a polishing liquid to a polishing pad in polishing, the polishing liquid supply apparatus including a nozzle structure 1, the nozzle structure 1 being provided with a plurality of nozzles 11, the plurality of nozzles 11 being arranged to respectively eject the polishing liquid to different positions of the polishing pad 2 in a radial direction, and being configured such that a polishing removal capability of the polishing liquid ejected to a center and an edge of the polishing pad 2 is smaller than a polishing removal capability of the polishing liquid ejected to an intermediate region between the center and the edge of the polishing pad 2.
By such a nozzle structure, the removal polishing capability of the polishing liquid sprayed toward the center and the edge of the polishing pad 2 can be made smaller than that of the polishing liquid sprayed toward the intermediate region between the center and the edge of the polishing pad 2, whereby the removal polishing amount of the silicon wafer appearing at the center annular region and the edge annular region of the polishing pad at a high frequency is reduced relative to the removal polishing amount of the silicon wafer appearing at the center of the intermediate annular region at a high frequency, thereby reducing the difference between the degree of polishing at the edge of the silicon wafer and the degree of polishing at the center of the silicon wafer and improving the overall flatness of the silicon wafer.
According to an embodiment of the present disclosure, as shown in fig. 1 and 2, the nozzle structure 1 may include one nozzle 12, wherein the plurality of nozzles 11 are disposed on the nozzle 12 in an extending direction of the nozzle 12.
The plurality of nozzles 11 are arranged to correspond to a radial direction of the polishing pad 2 and to completely cover a diameter range of the silicon wafer 3 to be polished. In polishing, the nozzles positioned corresponding to the center and the edge of the polishing pad 2 spray polishing liquids having small polishing removal capabilities toward the center and the edge of the polishing pad 2, respectively, and the nozzles positioned corresponding to the middle area of the polishing pad 2 spray polishing liquids having large polishing removal capabilities toward the middle area of the polishing pad 2.
It is understood that although the slurry supplied from each nozzle to the polishing pad is entirely collected toward the edge by the centrifugal force during polishing, the slurry collected at the edge is thrown off by the centrifugal force, so that more slurry is present at the center and the edge than at the middle region on the polishing pad.
According to an embodiment of the present disclosure, as shown in fig. 3, the nozzle structure 1 may further include a plurality of nozzles 12, wherein each of the plurality of nozzles 12 is provided with one of the plurality of nozzles 11 thereon.
In this case, one nozzle is provided per nozzle, and each nozzle corresponds to a position of the polishing pad 2 in the radial direction, in such a manner that the plurality of nozzles 11 still completely cover the range of the diameter of the silicon wafer 3 to be polished. Also, similarly, the ejection ports located corresponding to the center and the edge of the polishing pad 2 eject polishing liquid having a small polishing removal capability to the center and the edge of the polishing pad 2, respectively, and the ejection ports located corresponding to the middle area of the polishing pad 2 eject polishing liquid having a large polishing removal capability to the middle area of the polishing pad 2.
It is contemplated that the nozzles may be multiple nozzles branching from a manifold and that polishing fluid is provided to each nozzle from a source via the manifold.
However, it is also conceivable that the lances are independent of one another. That is, the nozzles are supplied with the polishing liquid from different sources, respectively, in which case the polishing liquid introduced into the nozzles may be the same or different.
In the embodiment of the present disclosure, each of the plurality of nozzles may extend from a position corresponding to the center of the polishing pad 2 to a position corresponding to the edge of the polishing pad, and the plurality of nozzles are spaced apart from each other corresponding to the circumferential direction of the polishing pad 2.
As shown in fig. 3, five nozzles 12 each extend from a position corresponding to the center of the polishing pad 2 to a position corresponding to the edge of the polishing pad 2, and the five nozzles 12 are spaced apart from each other, for example, at equal intervals from each other, corresponding to the circumferential direction of the polishing pad 2.
By this configuration, the polishing liquids sprayed from the respective spray nozzles 11 to the polishing pad 2 do not mix with each other when contacting the polishing pad 2 due to slight deviation of the splashing or dropping position, and thus cause deviation of the control of the polishing liquids at the respective positions on the polishing pad 2.
In the embodiment of the present disclosure, the plurality of nozzles 11 may be configured such that the polishing removal capability of the polishing liquid sprayed toward the center and the edge of the polishing pad 2 is smaller than the polishing removal capability of the polishing liquid sprayed toward the middle region of the polishing pad 2 between the center and the edge by spraying the polishing liquid at different flow rates.
Specifically, the flow rate of the polishing liquid ejected from the ejection openings 11 can be reduced, for example, by making the ejection openings 11 whose positions correspond to the center and the edge of the polishing pad 2 smaller, thereby reducing the polishing removal capability of the polishing liquid ejected toward the center and the edge of the polishing pad 2, so that the degree of polishing of the edge of the silicon wafer 3 is made relatively smaller, thereby reducing the difference between the degree of polishing of the edge of the silicon wafer and the degree of polishing of the center of the silicon wafer to improve the overall flatness of the silicon wafer. Other ways of varying the flow of the ejected polishing liquid through the orifice are also contemplated.
It is understood that, whether for a plurality of nozzles having the same source or for a plurality of nozzles each having a different source, the polishing removal capability of the polishing liquid ejected toward the center and the edge of the polishing pad 2 can be made smaller than the polishing removal capability of the polishing liquid ejected toward the middle region of the polishing pad 2 between the center and the edge by causing the nozzles to eject the polishing liquid at different flow rates
In another embodiment of the present disclosure, for the plurality of nozzles each having a different source, the plurality of nozzles 11 may be further configured to make the polishing removal capacity of the polishing liquid sprayed toward the center and the edge of the polishing pad 2 smaller than the polishing removal capacity of the polishing liquid sprayed toward the middle region of the polishing pad 2 between the center and the edge by spraying the polishing liquid at different concentrations or at different temperatures.
Specifically, the nozzles 11 at positions corresponding to the center and the edge of the polishing pad 2 may be made to eject polishing liquid having a small concentration or a low temperature, thereby reducing the polishing removal capability of the polishing liquid ejected toward the center and the edge of the polishing pad 2, so that the degree of polishing of the edge of the silicon wafer 3 is relatively reduced, thereby reducing the difference between the degree of polishing of the edge of the silicon wafer and the degree of polishing of the center of the silicon wafer to improve the overall flatness of the silicon wafer.
It is also contemplated that the polishing removal capability of the slurry may be varied by varying other types of parameters of the slurry.
In an embodiment of the present disclosure, the polishing liquid supply apparatus may further include a polishing liquid source, a pipe connecting the nozzle structure to the polishing liquid source, and various valves disposed in the pipe such as a flow rate adjusting valve and monitoring instruments such as a concentration detector and a temperature detector.
According to another aspect of the present disclosure, there is also provided a polishing apparatus including:
a polishing liquid supply device;
a polishing head for holding a silicon wafer to be polished; and
and a polishing pad disposed below the polishing head for polishing the silicon wafer contacted with the polishing pad by the polishing head by the polishing liquid supplied to the polishing pad by the polishing liquid supply means.
According to still another aspect of the present disclosure, there is also provided a polishing method performed using the above polishing apparatus, the polishing method including:
supplying a polishing liquid to the polishing pad by a polishing liquid supply device so that the polishing removal capacity of the polishing liquid sprayed toward the center and the edge of the polishing pad is smaller than that of the polishing liquid sprayed toward the middle area of the polishing pad; and
the silicon wafer to be polished is brought into contact with a polishing pad by a polishing head to polish the silicon wafer.
The above description is only for the specific embodiments of the present disclosure, but the scope of the present disclosure is not limited thereto, and any changes or substitutions that can be easily conceived by those skilled in the art within the technical scope of the present disclosure should be covered within the scope of the present disclosure. Therefore, the protection scope of the present disclosure should be subject to the protection scope of the claims.
Claims (9)
1. A polishing liquid supply apparatus for supplying a polishing liquid to a polishing pad in polishing, characterized by comprising a nozzle structure provided with a plurality of nozzles arranged respectively for ejecting the polishing liquid to different positions of the polishing pad in a radial direction and configured such that a polishing removal capability of the polishing liquid ejected to a center and an edge of the polishing pad is smaller than that of the polishing liquid ejected to an intermediate region of the polishing pad between the center and the edge.
2. The polishing solution supplying apparatus according to claim 1, wherein the nozzle structure includes a nozzle, and wherein the plurality of nozzles are provided on the nozzle in an extending direction of the nozzle.
3. The polishing solution providing apparatus according to claim 1, wherein the nozzle structure comprises a plurality of nozzles, wherein each of the plurality of nozzles has one of the plurality of nozzles disposed thereon.
4. The polishing solution supplying apparatus according to claim 3, wherein the plurality of nozzles are independent of each other.
5. The polishing liquid supply apparatus according to claim 3 or 4, wherein each of the plurality of nozzles extends from a position corresponding to a center of the polishing pad to a position corresponding to an edge of the polishing pad, and the plurality of nozzles are spaced apart from each other in correspondence to a circumferential direction of the polishing pad.
6. The polishing liquid supply apparatus according to any one of claims 1 to 4, wherein the plurality of nozzles are configured to make polishing removal capacities of the polishing liquids ejected toward the center and the edge of the polishing pad smaller than that of the polishing liquids ejected toward an intermediate region of the polishing pad between the center and the edge by ejecting the polishing liquids at different flow rates.
7. The polishing liquid supply apparatus according to claim 1 or 4, wherein the plurality of nozzles are configured such that polishing removal capacities of the polishing liquids sprayed toward the center and the edge of the polishing pad are smaller than polishing removal capacities of the polishing liquids sprayed toward an intermediate region of the polishing pad between the center and the edge by spraying the polishing liquids at different concentrations or at different temperatures.
8. A polishing apparatus, characterized by comprising:
the polishing liquid supply apparatus according to any one of claims 1 to 7;
a polishing head for holding a silicon wafer to be polished; and
a polishing pad disposed below the polishing head for polishing the silicon wafer brought into contact with the polishing pad by the polishing head by the polishing liquid supplied to the polishing pad by the polishing liquid supply means.
9. A polishing method characterized by being carried out using the polishing apparatus according to claim 8, the polishing method comprising:
supplying a polishing liquid to the polishing pad by the polishing liquid supply device so that the polishing removal capacity of the polishing liquid sprayed toward the center and the edge of the polishing pad is smaller than that of the polishing liquid sprayed toward the middle region of the polishing pad; and
and contacting the silicon wafer to be polished with the polishing pad through the polishing head to polish the silicon wafer.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202211709077.7A CN115890456A (en) | 2022-12-29 | 2022-12-29 | Polishing liquid supply device, polishing equipment and polishing method |
| TW112106621A TW202331833A (en) | 2022-12-29 | 2023-02-23 | Polishing solution supply device, polishing equipment and polishing method capable of reducing polishing level on edge of silicon wafer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202211709077.7A CN115890456A (en) | 2022-12-29 | 2022-12-29 | Polishing liquid supply device, polishing equipment and polishing method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN115890456A true CN115890456A (en) | 2023-04-04 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202211709077.7A Pending CN115890456A (en) | 2022-12-29 | 2022-12-29 | Polishing liquid supply device, polishing equipment and polishing method |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN115890456A (en) |
| TW (1) | TW202331833A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116141189A (en) * | 2023-04-21 | 2023-05-23 | 西安奕斯伟材料科技股份有限公司 | Polishing table, polishing apparatus, and polishing method |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115890456A (en) * | 2022-12-29 | 2023-04-04 | 西安奕斯伟材料科技有限公司 | Polishing liquid supply device, polishing equipment and polishing method |
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2022
- 2022-12-29 CN CN202211709077.7A patent/CN115890456A/en active Pending
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2023
- 2023-02-23 TW TW112106621A patent/TW202331833A/en unknown
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Also Published As
| Publication number | Publication date |
|---|---|
| TW202331833A (en) | 2023-08-01 |
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