CN114290231A - Polishing apparatus and polishing method - Google Patents
Polishing apparatus and polishing method Download PDFInfo
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- CN114290231A CN114290231A CN202111654099.3A CN202111654099A CN114290231A CN 114290231 A CN114290231 A CN 114290231A CN 202111654099 A CN202111654099 A CN 202111654099A CN 114290231 A CN114290231 A CN 114290231A
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Abstract
The embodiment of the invention discloses polishing equipment and a polishing method. The polishing apparatus includes: a polishing table; a polishing pad disposed on an upper surface of the polishing table; a drive shaft for driving the polishing table to rotate; a polishing head and a nozzle assembly disposed in a space above the polishing table; wherein the nozzle assembly includes a first nozzle for spraying a first polishing liquid to a central region of the polishing pad, the first polishing liquid being distributed over the polishing pad by rotation of the polishing table, and a second nozzle for spraying a second polishing liquid to an edge region of the polishing pad to provide a greater polishing removal amount at the edge region than at the central region.
Description
Technical Field
The invention relates to the technical field of semiconductor manufacturing, in particular to polishing equipment and a polishing method.
Background
In the process of producing silicon wafers, a Final Polishing (FP) process is the last process for controlling the flatness and roughness parameters of the silicon wafers. The final polishing process is to remove the defects of the front-end process and mirror-like polish the surface of the silicon wafer by removing a certain amount of the surface of the silicon wafer.
The most common embodiment during FP operations is the Chemical Mechanical Polishing (CMP) process, in which a silicon wafer is pressed by a Polishing head against a vibrating Polishing table with a Polishing pad while a slurry of abrasive particles is supplied to the Polishing pad. However, since the working pressure from the polishing head tends to concentrate on the central area of the polishing head, the distribution of the pressure transmitted to the surface of the silicon wafer to be polished is also uneven, wherein the force received by the central area of the silicon wafer is greater than the force received by the other areas, which causes the polishing removal amount of the central area of the surface of the silicon wafer to be greater than the polishing removal amount of the edge area of the surface of the silicon wafer during the polishing of the silicon wafer, thereby causing the surface flatness of the silicon wafer to deteriorate.
Disclosure of Invention
In view of this, embodiments of the present invention are expected to provide a polishing apparatus and a polishing method, which can provide different polishing removal amounts for different regions of a silicon wafer, so as to improve the planarization quality of the silicon wafer.
The technical scheme of the invention is realized as follows:
in a first aspect, an embodiment of the present invention provides a polishing apparatus, including: a polishing table; a polishing pad disposed on an upper surface of the polishing table; a drive shaft for driving the polishing table to rotate; a polishing head and a nozzle assembly disposed in a space above the polishing table; wherein the nozzle assembly includes a first nozzle for spraying a first polishing liquid to a central region of the polishing pad, the first polishing liquid being distributed over the polishing pad by rotation of the polishing table, and a second nozzle for spraying a second polishing liquid to an edge region of the polishing pad to provide a greater polishing removal amount at the edge region than at the central region.
In a second aspect, an embodiment of the present invention provides a polishing method, including: the polishing table with the polishing pad arranged on the upper surface is driven to rotate by a driving shaft; spraying a first polishing solution to a central region of the polishing pad through a first nozzle; spraying a second polishing solution to the edge area of the polishing pad through a second nozzle; wherein the first polishing liquid and the second polishing liquid are distributed on the polishing pad by rotation of the polishing table to provide a greater polishing removal amount at the edge region than at the central region.
The embodiment of the invention provides polishing equipment and a polishing method; different from the technical scheme of only using a single polishing solution for one polishing operation in the prior art, the embodiment of the invention provides that two nozzles are arranged in a polishing device, wherein the first nozzle is used for spraying the first polishing solution to the central area of a polishing pad, the second nozzle is used for spraying the second polishing solution to the edge area of the polishing pad, and the first polishing solution and the second polishing solution are distributed on the polishing pad by virtue of centrifugal force generated by rotation of a polishing table, so that the polishing removal amount larger than that of the central area of the polishing pad can be provided in the edge area of the polishing pad, and the problem of uneven polishing removal amount on the surface of a silicon wafer caused by the self-structure of the polishing head, particularly the problem of insufficient polishing removal amount on the edge area of the surface of the silicon wafer is solved, thereby improving the flatness of the surface of the silicon wafer.
Drawings
FIG. 1 is a schematic view of a polishing apparatus according to an embodiment of the present invention;
FIG. 2 is a graph of the removal profile of a silicon wafer after polishing using conventional polishing equipment;
FIG. 3 is a schematic view showing the polishing of a silicon wafer by using the polishing apparatus provided in the embodiment of the present invention;
FIG. 4 is a flow chart of a polishing method according to an embodiment of the present invention.
Detailed Description
The technical solution in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention.
After the silicon wafer is processed by the DSP process, fine damage is usually left on the surface. To remove the damage, and to make the wafer mirror-like and to continuously improve the flatness, the FP operation is usually performed. In the conventional FP operation, a Polishing Head (Polishing Head) loaded with a silicon wafer is brought into contact with the surface of a Polishing pad stuck on a lower surface plate, and the surface of the silicon wafer is polished by a chemical reaction between a Colloidal slurry (Colloidal slurry) and chemicals (chemicals) supplied from a slurry Tube (slurry Tube) and by the influence of a physical reaction caused by mechanical pressurization.
Specifically, the silicon wafer which completes the DSP process is placed into a cleaning machine, and then FP operation is required to be performed after the silicon wafer is discharged from the cleaning machine, wherein the complete FP operation flow comprises three polishing operations, which are as follows: firstly, carrying out a first FP step, which can also be called a rough Polishing (Stock Polishing) step, on a silicon wafer taken out of a cleaning machine, wherein the step is used for removing surface defects of the silicon wafer caused by a previous process and manufacturing the silicon wafer into a mirror surface state; this step is used to adjust the flatness of the abrasive particles (particles) and the entire wafer surface during the operation. The rough polishing step is followed by a second FP step that adjusts the abrasive grains to adjust the roughness of the wafer surface by using a minimum amount of grinding. After the second FP step is completed, a third FP step is performed to adjust micro roughness (micro roughness) and fine particles (fine particles) of the surface of the silicon wafer and to complete the finalizing work. After the FP operation of the above 3 steps is completed, the silicon wafer is subjected to simple surface cleaning in the apparatus, and finally placed in a blanking cassette (unloading cassette), and a waiting process is performed until the blanking cassette is filled with the silicon wafer.
For the first FP step in the above work flow, i.e. the rough polishing step, during the work, the polishing apparatus 10 for performing the step is shown in fig. 1, and the apparatus 10 may include: a polishing table 11, a polishing pad 12 attached to the upper surface of the polishing table 11 by bonding or the like, and a drive shaft 13 provided below the polishing table 11. The polishing table 11 can be rotated by the drive shaft 13, and thus the polishing pad 12 can also be rotated corresponding to the rotation of the polishing table 11. For example, when the drive shaft 13 rotates in the clockwise direction, the polishing table 11 rotates in the clockwise direction together with the polishing pad 12. Further, a polishing head 14 is provided in a space above the polishing table 11, and the polishing head 14 may include at least: a Head main body (Head)141, a fixed plate 142, a rotary driving member 143 connected with the Head main body (Head)141 and the fixed plate 142 by a fastener, an assembly mold 145 below the fixed plate 142, a rubber pad 144 and a silicon wafer S to be polished being accommodated in an accommodation cavity formed by the assembly mold 145, wherein the rubber pad 144 is connected to the Head main body 141, and a vacuum/air pipe 146 for supplying Compressed Dry Air (CDA) into the accommodation cavity of the assembly mold 145 to form a working pressure, which acts on the rubber pad 144 and is transmitted to the silicon wafer S to be polished via the rubber pad 144. It should be noted that the rotary driving element 143 can rotate the head main body 141, so that the surface plate 142 and the silicon wafer S to be polished in the accommodating cavity of the assembly mold 145 can also rotate corresponding to the rotation of the head main body 141. For example, when the rotary drive 143 rotates in a counterclockwise direction, the head main body 141 and the silicon wafer S to be polished are rotated in a counterclockwise direction together. It will be appreciated that the directions of rotation of the drive shaft 13 and the rotary drive member 143 may or may not be the same. In addition, the apparatus 10 may further include a nozzle 15 disposed in the space above the polishing pad 12 and near the center of the polishing pad 12, and the nozzle 15 may be connected to a storage tank (not shown in fig. 1) for storing the polishing liquid, and the dropping flow rate of the polishing liquid is controlled by a valve.
When a polishing operation is performed, the rotating polishing head 14 is pressed against the rotating polishing pad 12 with a certain pressure, a polishing liquid composed of submicron or nanometer abrasive particles and a chemical solution is dropped onto the polishing pad 12 through the nozzle 15, flows between the surface of the silicon wafer S and the polishing pad 12, and then the polishing liquid is uniformly distributed on the polishing pad 12 by the transmission and centrifugal force of the polishing pad 12, thereby forming a liquid film of the polishing liquid between the silicon wafer S and the polishing pad 12. Chemical components in the polishing solution and the surface material of the silicon wafer generate chemical reaction, insoluble substances are converted into soluble substances, or substances with high hardness are softened, then the chemical reactants are removed from the surface of the silicon wafer through the micro-mechanical friction effect of abrasive particles and dissolved in flowing liquid to be taken away, namely, the purpose of planarization is realized in the alternate process of chemical film forming and mechanical film removing.
In addition, in order to facilitate the distribution of the polishing liquid on the polishing pad, the apparatus 10 may further include a vibrator 16 disposed on the polishing table 11, the vibrator 16 being configured to vibrate the polishing table to help adjust the distribution of the polishing liquid. Furthermore, in order to be able to adjust the distribution of the polishing liquid in time as required, the apparatus 10 further comprises a transmission 17 for controlling the rotational speed of the drive shaft 13 to adjust the rotational speed of the polishing table 11.
However, in the above polishing operation, as shown in fig. 1 in particular, since the working pressure is concentrated on the central region of the rubber pad 144, the entire rubber pad 144 in the stressed state takes the shape of a concave arc, which may result in that the rubber pad 144 may not uniformly transmit the pressure to the entire surface, and the edge portion of the rubber pad 144 may not even act on the silicon wafer, that is, may not transmit the working pressure to the edge region of the silicon wafer, which may cause the polishing removal amount of the edge region of the silicon wafer surface to be smaller than that of the central region of the silicon wafer surface, and the unevenness of the polishing removal amount may eventually cause the flatness of the silicon wafer surface to deteriorate. For example, referring to fig. 2, there is shown a removal profile of a silicon wafer polished using a conventional polishing apparatus, wherein a curve represents an approximation of the amount of polishing removal for a corresponding portion of the silicon wafer located below the curve, and the numerical values below the silicon wafer represent the amount of polishing removal for the corresponding portion of the silicon wafer. If the depth of the defect in the incoming material itself is large, the amount of removal of the final polishing process needs to be increased, and the flatness is further deteriorated.
In order to improve the flatness of the polished silicon wafer surface, referring to fig. 1, there is shown a polishing apparatus 10 provided by an embodiment of the present invention, the polishing apparatus comprising: a polishing table 11; a polishing pad 12 disposed on an upper surface of the polishing table 11; a drive shaft 13 for driving the polishing table 11 to rotate; a polishing head 14 and a nozzle assembly PS disposed in a space above the polishing table 11; wherein the nozzle assembly PS includes a first nozzle 15 and a second nozzle 18, the first nozzle 15 is used for spraying a first polishing liquid to a central region 121 of the polishing pad 12, the first polishing liquid is distributed on the whole polishing pad 12 by the rotation of the polishing table 11, and the second nozzle 18 is used for spraying a second polishing liquid to an edge region 122 of the polishing pad 12 to provide a polishing removal amount at the edge region 122 greater than that at the central region.
The above-described embodiment according to the present invention provides a polishing apparatus different from the prior art in which only a single kind of polishing liquid is used for one polishing operation, and proposes to provide two nozzles in the polishing apparatus, wherein the first nozzle 15 is used for spraying a first polishing liquid to a central region 121 of the polishing pad 12, the second nozzle 18 is used for spraying a second polishing liquid to an edge region 122 of the polishing pad 12, the first polishing liquid and the second polishing liquid are distributed on the polishing pad 12 by means of a centrifugal force generated by rotation of the polishing table 11, so that it is possible to provide a greater amount of polishing removal at the edge area 122 of the polishing pad 12 than at the central area 121 of the polishing pad 12, thereby solving the problem of uneven polishing removal quantity on the surface of the silicon chip caused by the self structure of the polishing head, especially, the problem of insufficient polishing removal amount of the edge area of the silicon wafer surface is solved, thereby improving the flatness of the silicon wafer surface.
According to a preferred embodiment of the present invention, the first polishing liquid and the second polishing liquid can be distributed on the polishing pad by means of rotation and vibration of the polishing table to provide a polishing ability gradually increasing from the center toward the edge of the polishing pad.
In a conventional polishing operation, in order to improve polishing efficiency, two or more silicon wafers are generally placed on the same polishing pad to simultaneously perform a polishing operation on the silicon wafers. In view of these circumstances, in performing a polishing operation using the polishing apparatus 10 provided according to the above-described embodiment of the present invention, referring to fig. 3, a silicon wafer S to be polished may be placed on the polishing pad 12 such that at least a portion of the edge region of the silicon wafer S is located in the edge region 122 of the polishing pad 12, and then, by rotating the head main body 141 together with the silicon wafer S by the rotary drive 143, the entire edge region of the silicon wafer S may be polished at the edge region 122 of the polishing pad 12, and the combined action of the first and second polishing liquids provides a greater amount of polishing removal for the edge region of the silicon wafer S, thereby solving the problem of non-uniformity in the amount of polishing removal of the surface of the silicon wafer.
As mentioned above, during the polishing process, the slurry reacts with the wafer chemically, and the slurry and the polishing pad also act mechanically on the wafer, so that the characteristics of the slurry related to both aspects play an important role in the polishing performance, for example, the slurry having a large particle size can improve the mechanical polishing performance, and the slurry having a high pH can improve the chemical etching performance. In addition, according to the technical solution provided by the embodiment of the present invention, two polishing solutions provide different polishing removal amounts in different regions of the polishing pad, so that there is a certain difference between the particle size and the PH value of the two polishing solutions, for example, preferably, the particle size of the first polishing solution is smaller than the particle size of the second polishing solution, and the PH value of the first polishing solution is smaller than or equal to the PH value of the second polishing solution.
As an example of the present invention, the first polishing liquid has a particle size in the range of 30nm to 40nm, and the second polishing liquid has a particle size in the range of 50nm to 60 nm; the pH value of the first polishing solution is in the range of 9.5-10.5, and the pH value of the second polishing solution is in the range of 10.5-11.5.
According to a preferred embodiment of the present invention, the second nozzle 18 is configured to spray the second polishing liquid after the polishing liquid sprayed by the first nozzle 15 is distributed over the entire polishing pad 12, whereby the second polishing liquid can be added to the edge of the polishing pad 12 to increase the removal amount of the edge of the silicon wafer after the first polishing liquid can be uniformly distributed on the polishing pad 12 by the rotation of the polishing table 11 to balance the overall removal amount of the silicon wafer.
Referring to fig. 1 and 2, an embodiment of the present invention also provides a polishing method including: s101: a polishing table 11 provided with a polishing pad 12 on the upper surface is driven to rotate by a drive shaft 13; s102: spraying a first polishing liquid to a central region 121 of the polishing pad 12 through a first nozzle 15; s103: spraying a second polishing solution through a second nozzle 18 to an edge region 122 of the polishing pad 12; wherein the first polishing liquid and the second polishing liquid are distributed on the polishing pad 12 by rotation of the polishing table 11 to provide a polishing removal amount at the edge area 122 larger than that at the central area 121.
According to a preferred embodiment of the present invention, the polishing method further comprises: the rotational speed of the drive shaft 13 is adjusted by a transmission 17 connected to the drive shaft 13 to control the rotational speed of the polishing table 11.
According to a preferred embodiment of the present invention, the polishing method further comprises: the polishing table 11 is vibrated by a vibrator 16.
It should be noted that: the technical schemes described in the embodiments of the present invention can be combined arbitrarily without conflict.
The above description is only for the specific embodiments of the present invention, but the scope of the present invention is not limited thereto, and any person skilled in the art can easily conceive of the changes or substitutions within the technical scope of the present invention, and all the changes or substitutions should be covered within the scope of the present invention. Therefore, the protection scope of the present invention shall be subject to the protection scope of the appended claims.
Claims (10)
1. A polishing apparatus, characterized in that the polishing apparatus comprises:
a polishing table;
a polishing pad disposed on an upper surface of the polishing table;
a drive shaft for driving the polishing table to rotate;
a polishing head and a nozzle assembly disposed in a space above the polishing table;
wherein the nozzle assembly includes a first nozzle for spraying a first polishing liquid to a central region of the polishing pad, the first polishing liquid being distributed over the polishing pad by rotation of the polishing table, and a second nozzle for spraying a second polishing liquid to an edge region of the polishing pad to provide a greater polishing removal amount at the edge region than at the central region.
2. The polishing apparatus according to claim 1, wherein the grain size of the first polishing liquid is smaller than the grain size of the second polishing liquid, and the PH of the first polishing liquid is equal to or smaller than the PH of the second polishing liquid.
3. The polishing apparatus according to claim 1, wherein the second nozzle is provided to spray the second polishing liquid after the polishing liquid sprayed by the first nozzle is distributed over the polishing pad.
4. A polishing apparatus according to any one of claims 1 to 3, further comprising a vibrator provided on the polishing table, the vibrator being arranged to vibrate the polishing table to assist in adjusting the distribution of the first and/or second polishing liquid.
5. The polishing apparatus according to any one of claims 1 to 3, further comprising a transmission for adjusting a rotational speed of the drive shaft to control a rotational speed of the polishing table.
6. A polishing method, characterized in that the polishing method comprises:
the polishing table with the polishing pad arranged on the upper surface is driven to rotate by a driving shaft;
spraying a first polishing solution to a central region of the polishing pad through a first nozzle;
spraying a second polishing solution to the edge area of the polishing pad through a second nozzle;
wherein the first polishing liquid and the second polishing liquid are distributed on the polishing pad by rotation of the polishing table to provide a greater polishing removal amount at the edge region than at the central region.
7. The polishing method according to claim 6, further comprising: adjusting a rotational speed of the drive shaft via a transmission connected to the drive shaft to control a rotational speed of the polishing table.
8. The polishing method according to claim 6, further comprising: the polishing table is vibrated by a vibrator.
9. The polishing method as set forth in claim 6, wherein the step of spraying the second polishing liquid to the edge area of the polishing pad through the second nozzle is performed after the step of spraying the first polishing liquid to the central area of the polishing pad through the first nozzle.
10. The polishing method according to any one of claims 6 to 9, wherein the grain size of the first polishing liquid is smaller than the grain size of the second polishing liquid, and the PH of the first polishing liquid is equal to or lower than the PH of the second polishing liquid.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111654099.3A CN114290231A (en) | 2021-12-30 | 2021-12-30 | Polishing apparatus and polishing method |
| TW111131113A TW202301524A (en) | 2021-12-30 | 2022-08-18 | Polishing apparatus and polishing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111654099.3A CN114290231A (en) | 2021-12-30 | 2021-12-30 | Polishing apparatus and polishing method |
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| Publication Number | Publication Date |
|---|---|
| CN114290231A true CN114290231A (en) | 2022-04-08 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202111654099.3A Pending CN114290231A (en) | 2021-12-30 | 2021-12-30 | Polishing apparatus and polishing method |
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| Country | Link |
|---|---|
| CN (1) | CN114290231A (en) |
| TW (1) | TW202301524A (en) |
Cited By (2)
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| CN115890456A (en) * | 2022-12-29 | 2023-04-04 | 西安奕斯伟材料科技有限公司 | Polishing liquid supply device, polishing equipment and polishing method |
| CN116141189A (en) * | 2023-04-21 | 2023-05-23 | 西安奕斯伟材料科技股份有限公司 | Polishing table, polishing apparatus, and polishing method |
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| CN116141189A (en) * | 2023-04-21 | 2023-05-23 | 西安奕斯伟材料科技股份有限公司 | Polishing table, polishing apparatus, and polishing method |
Also Published As
| Publication number | Publication date |
|---|---|
| TW202301524A (en) | 2023-01-01 |
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Address after: Room 1-3-029, No. 1888, Xifeng South Road, high tech Zone, Xi'an, Shaanxi 710065 Applicant after: Xi'an Yisiwei Material Technology Co.,Ltd. Applicant after: XI'AN ESWIN SILICON WAFER TECHNOLOGY Co.,Ltd. Address before: 710100 room 1-3-029, No. 1888, Xifeng South Road, high tech Zone, Xi'an, Shaanxi Province Applicant before: Xi'an yisiwei Material Technology Co.,Ltd. Applicant before: XI'AN ESWIN SILICON WAFER TECHNOLOGY Co.,Ltd. |
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