CN103182676A - Grinding cushion, and grinding device and grinding method using grinding cushion - Google Patents
Grinding cushion, and grinding device and grinding method using grinding cushion Download PDFInfo
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- CN103182676A CN103182676A CN2011104534964A CN201110453496A CN103182676A CN 103182676 A CN103182676 A CN 103182676A CN 2011104534964 A CN2011104534964 A CN 2011104534964A CN 201110453496 A CN201110453496 A CN 201110453496A CN 103182676 A CN103182676 A CN 103182676A
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Abstract
The invention discloses a grinding cushion, and a grinding device and a grinding method using the grinding cushion. The grinding cushion comprises first grinding areas and a second grinding area, wherein the first grinding areas are formed on the edge of the grinding cushion, and are used for grinding the edge of a wafer; the second grinding area can be used for at least accommodating an entire wafer surface, and is used for grinding the entire wafer; and grooves are formed between the first grinding areas and the second grinding area of the grinding cushion. The grinding device provided with the grinding cushion comprises a grinding table, a grinding head and a first conveying device, wherein the wafer is placed on the grinding cushion, and the edge of the wafer is contacted with the first grinding areas; the grinding table is kept static; the grinding head is rotated for grinding the edge of the wafer; and a liquid ejected by the first conveying device is only retained in the first grinding areas. Due to the adoption of the grinding cushion, the grinding device and the grinding method, the entire wafer surface can be ground, the edge of the wafer can be ground separately, the uniformity of the ground central area and the edge area of the wafer is improved, and the production yield of a semiconductor device is increased greatly.
Description
Technical field
The present invention relates to the semiconductor fabrication process technical field, relate in particular to the grinding pad for chemical mechanical milling tech, the lapping device that uses this grinding pad and Ginding process.
Background technology
Cmp (CMP) technology is a kind of technology that the wafer overall situation and local planarization can be provided.Chemical mechanical milling tech be widely used in inter-level dielectric, metal level or shallow trench isolation from removal and smooth, become semiconductor make in important technology.
The mechanism of CMP is: coming the planarization crystal column surface by the relative motion between wafer and the grinding pad under certain pressure.Fig. 1 is that the lapping device of prior art grinds the wafer schematic diagram, and when grinding wafer, wafer 7 is fixed on the grinding head, the grinding pad 1 of wafer surface to be ground on the grinding table 5; Conveying device 8 is carried lapping liquid to grinding pad, contains abrasive grains in the described lapping liquid.In the process of lapping, crystal column surface material and lapping liquid generation chemical reaction generate the relatively easy superficial layer of removing of one deck, under the effect of abrasive grains, this superficial layer with the relative motion of grinding pad in mechanically ground away.Owing in the attrition process process, inevitably can produce as grinding byproducts such as particles, the grinding pad cleaning device can be set usually, in order in time remove the grinding byproducts such as particle on grinding pad surface above grinding pad.
Existing wafer CMP technology can only be ground the full wafer crystal column surface usually, yet integrated along with semiconductor devices becomes most important to the accurate control of each technology.In the semiconductor components and devices manufacture process, after the full wafer wafer grinds through CMP, the phenomenon that crystal circle center zone and fringe region (non-uniformity) in uneven thickness often occur, and have the grinding residue at crystal round fringes, if this grinding residue is not removed and further contamination grinding device, therefore, need grind again the edge of wafer to remove this residue, and existing C MP device can't be removed the grinding residue of crystal round fringes separately.For example in GST CMP technology, the GST alloy is the IV-V-VI ternary compound, be to be applied to the very promising material of phase transition storage (PCM), because there is the inhomogeneous problem of grinding usually in CMP, therefore after CMP, the edge more easily produces the GST residue, causes GST CMP defective workmanship rate to improve.If the CMP device that adopts being used for shown in Fig. 1 to grind whole wafer solves the problems referred to above, though can remove the grinding residue of crystal round fringes, the phenomenon of overmastication can appear in the crystal circle center zone.
In addition, in other technology, to the control in crystal round fringes zone often than the control complexity of central area.For example, in the depositing technics of film, therefore the film poor adherence of fringe region, if this regional film is not removed, peeling phenomenon occurs easily in subsequent technique, thereby, need remove separately the film of crystal round fringes.If adopt existing C MP device to solve the problems referred to above, the film of whole wafer can be removed.
Be that the U.S. Patent application of US2011/0171882A1 has disclosed a kind of chemical mechanical polishing device as publication number, comprise the grinding bracing or strutting arrangement, in order to when grinding wafer, to support grinding head, and maintenance and grinding table are horizontal, bearing height according to degree of grinding real time altering grinding bracing or strutting arrangement improves the grinding uniformity of semiconductor crystal wafer center and marginal zone.Said method is by improving the inhomogeneous problem of grinding that solves crystal circle center district that prior art exists and marginal zone to lapping device, yet, lapping device is relatively accurate processing unit (plant), and the improvement of lapping device is meaned the raising production cost.
In view of this, need a kind of new chemical mechanical polishing device and use this device to carry out abrasive method.
Summary of the invention
The technical problem that the present invention solves provides a kind of grinding pad, uses lapping device and the Ginding process of this grinding pad, can grind crystal round fringes separately, obtains the better grinding uniformity, improves the wafer production yield.
For solving the problems of the technologies described above, the embodiment of the invention at first provides a kind of grinding pad, comprising:
First milling zone is arranged at the grinding pad edge, is used for grinding crystal round fringes;
Second milling zone, described second milling zone can hold whole wafer at least, is used for grinding whole crystal column surface;
Wherein, has groove between first milling zone of described grinding pad and second milling zone.
Alternatively, described grinding pad has a plurality of first milling zones.
Alternatively, the profile of described groove is curved.
Alternatively, described groove comprises arc, and the diameter of described arc is 0.5cm～5cm.
Alternatively, the width of described groove is 0.5cm～2cm.
Further embodiment of this invention provides a kind of lapping device that comprises above-mentioned grinding pad, and described lapping device also comprises first conveying device.
Alternatively, described first conveying device can turn to first milling zone top with to the first milling zone jet surface liquid, and described first conveying device also can turn to second milling zone top with to the second milling zone jet surface liquid.
Alternatively, described lapping device also comprises second conveying device, and described first conveying device is in order to the first milling zone jet surface liquid, and described second conveying device is in order to the second milling zone jet surface liquid.
Yet another embodiment of the invention provides a kind of Ginding process of using above-mentioned lapping device, comprising:
Grinding pad is provided, places on the rotatable grinding table, described grinding pad comprises first milling zone and second milling zone, has groove between described first milling zone and second milling zone;
Wafer is provided, with described wafer load on grinding head;
First conveying device is provided, places described grinding pad top, described first conveying device, required liquid when grinding wafer in order to supply;
When needs grind whole crystal column surface, grind the wafer process and comprise: adopt second milling zone that whole crystal column surface is ground, adopt first milling zone that the edge of wafer is ground;
When only needing to grind crystal round fringes, adopt first milling zone that the edge of wafer is ground.
Alternatively, when whole crystal column surface is ground, jet grinding liquid to the second milling zone.
Alternatively, when only whole crystal round fringes being ground, the grinding head rotation, it is static that grinding table keeps.
Alternatively, when only grinding crystal round fringes, jet grinding liquid to the first milling zone sprays deionized water to the second milling zone simultaneously.
Alternatively, after whole crystal column surface and crystal round fringes were ground, jet cleaning liquid cleaned to the whole surface of grinding pad.
Alternatively, described first milling zone has a plurality of, when first milling zone reaches CMP during service life, carries wafer by grinding head and moves to another first milling zone grinding crystal round fringes.
Compared with prior art, the embodiment of the invention has the following advantages:
First milling zone and second milling zone of the embodiment of the invention by being separated from each other grinding pad setting, first milling zone can grind crystal round fringes separately, second milling zone can grind whole crystal column surface, has improved the central area of grinding wafer and the uniformity of fringe region;
The embodiment of the invention is by control conveying device jet grinding liquid, when grinding crystal round fringes, to the first milling zone jet grinding liquid, spray deionized water to second milling zone simultaneously, thereby when grinding crystal round fringes separately, can play lubrication, prevent second milling zone damage crystal column surface;
The embodiment of the invention has improved semiconductor devices and has produced yield owing to removed the residue of the crystal round fringes that is caused by grinding inhomogeneities or other technology;
The present invention only improves the structure of grinding pad, does not improve production cost.
Description of drawings
Fig. 1 is that the lapping device of prior art grinds the wafer schematic diagram;
Fig. 2 is the schematic top plan view of the grinding pad of one embodiment of the invention;
Fig. 3～Fig. 6 is one embodiment of the invention grinding pad manufacturing process schematic diagram;
Fig. 7 is the cross-sectional schematic of utilizing the lapping device grinding wafer of one embodiment of the invention;
Fig. 8 utilizes the lapping device of one embodiment of the invention grinding pad to grind the wafer schematic diagram;
Fig. 9 is the Ginding process schematic flow sheet that utilizes the lapping device of one embodiment of the invention.
The specific embodiment
The technical problem that the CMP device that exists for the solution prior art can't grind crystal round fringes separately, the embodiment of the invention is improved at existing grinding pad, first milling zone and second milling zone be separated from each other is set at grinding pad, utilize this grinding pad, can solve the technical problem that existing CMP device can't grind crystal round fringes separately.Below with reference to accompanying drawing embodiment of the present invention is described in detail.
A lot of details have been set forth in the following description so that fully understand the present invention.But the present invention can implement much to be different from alternate manner described here, and those skilled in the art can do similar popularization under the situation of intension of the present invention, so the present invention is not subjected to the restriction of following public specific embodiment.
Embodiment one:
For solving the problems of the technologies described above, the invention provides a kind of grinding pad that can grind crystal round fringes separately, according to an embodiment of the present invention, this grinding pad comprises:
First milling zone is arranged at the grinding pad edge, is used for grinding crystal round fringes;
Second milling zone, described second milling zone can hold whole wafer at least, is used for grinding whole crystal column surface;
Wherein, has groove between first milling zone of described grinding pad and second milling zone.
Fig. 2 is the vertical view of the grinding pad of one embodiment of the invention.As shown in the figure, grinding pad 1 is provided with a plurality of first milling zones 11, described first milling zone 11 is arranged at intervals at the edge of grinding pad 1, and around second milling zone 12 of grinding pad 1, have groove 13 between first milling zone 11 and second milling zone 12, and first milling zone 11 separates with second milling zone 12 by groove 13.Described first milling zone 11, second milling zone 12 and groove 13 have constituted the shape of grinding pad 1 jointly, and corresponding with the shape of grinding table, in order to grinding pad 1 aligning is set on the grinding table.
Be provided with 4 first milling zones among Fig. 2 though those skilled in the art will be appreciated that, not as limit, and these a plurality of first milling zones do not really want evenly to be spaced yet, and separate setting as long as satisfy first milling zone with second milling zone.
The profile of the described groove 13 between described first milling zone 11, second milling zone 12 is curved.Described groove 13 can be the band of arc, and the band of described arc comprises arc and outer arcuate, and the sidewall near first milling zone 11 of groove 13 is arc, and the sidewall near second milling zone 12 of groove 13 is outer arcuate.The diameter of described arc is 0.5cm～5cm.The width of described groove is 0.5cm～2cm.
Below in conjunction with Fig. 3～Fig. 6 grinding pad of the present invention is elaborated, Fig. 3～Fig. 6 is the manufacturing process schematic diagram of one embodiment of the invention grinding pad.
Conventional grinding pad 1 is provided among Fig. 3, and grinding pad 1 is made up of three-decker, comprises grinding layer 3 from top to bottom, inferior grinding layer 2 and adhesion layer 4.Grinding pad shown in Figure 3 is double-deck grinding layer structure, but the invention is not restricted to this, namely grinding layer also can be individual layer or more multi-layered structure wherein.Grinding layer 3 contacts with crystal column surface to be ground when grinding, and is made of polymeric substrate usually.Adhesion layer 4 cards are attached to the back side of time grinding layer 2, and usually with attachment, with protection adhesion layer 4, this adhesion layer 4 and attachment for example can adopt double faced adhesive tape on the adhesion layer 4.During use, the attachment on the adhesion layer 4 of grinding pad 1 is torn, utilize the effect of sticking together of adhesion layer 4 that grinding pad 1 is attached on the grinding table then.
Then as shown in Figure 4, go out ditch line of rabbet joint L in the grinding pad edge cuts, be used for grinding pad is arranged for first milling zone that grinds crystal round fringes, and be used for grinding second milling zone of whole crystal column surface.The degree of depth of the ditch of cutting shown in the figure line of rabbet joint is just touched the adhesion layer 4 of grinding pad 1, and convenient so follow-up attachment with adhesion layer 4 removes behind from grinding pad.As long as satisfy when first milling zone grinds crystal round fringes yet those skilled in the art will be appreciated that the degree of depth of this ditch line of rabbet joint, the liquid that is injected into first milling zone is intercepted unlikely inflow second milling zone by the groove between this ditch line of rabbet joint and gets final product.According to the size (if first milling zone is this round diameter length for semicircle) of first milling zone that will form, and according to the groove width that will form, cut out ditch line of rabbet joint L at grinding pad.
Be noted that grinding pad of the present invention not only can grind crystal round fringes separately, can also grind whole crystal column surface, therefore, also have second milling zone on the grinding pad except first milling zone, described second milling zone can hold whole wafer at least, to grind whole crystal column surface.
As one embodiment of the invention, the profile of described groove 13 can semicircular in shape, and is approximately 0.5cm～5cm near this semicircle diameter of the sidewall of first milling zone 11.The width of the groove between the described ditch line of rabbet joint is approximately 0.5cm～2cm.Will be appreciated that the surface size according to grinding pad and wafer to be processed, as those skilled in the art, can in above-mentioned scope, suitably adjust the size of first milling zone and groove width.
Be noted that, only formed the ditch line of rabbet joint L of grinding pad to be removed part among Fig. 4, that is to say, the grinding pad part to be removed between two ditch line of rabbet joint L also is not removed, that is, the grinding pad of this moment still constitutes whole on the surface.Processing is convenient to grinding pad is adhered on the grinding table as a whole like this, adheres to after first, second milling zone separation is arranged again, and may cause the position misalignment between grinding pad and the grinding table.
Next, as shown in Figure 5, remove the attachment on the undermost adhesion layer 4 of grinding pad, utilize the effect of sticking together of adhesion layer 4 that grinding pad 1 is attached on the grinding table 5.Because the part of the grinding pad between the ditch line of rabbet joint L is not removed as yet, makes grinding pad still can be used as integral body and adheres on the grinding table.
At last, as shown in Figure 6, remove the grinding pad material between the ditch line of rabbet joint L, form groove 13.Like this, formed first milling zone 11 and second milling zone 12 that is separated by groove 13 at grinding pad 1.Described first milling zone 11, second milling zone 12 and groove 13 have constituted the shape of grinding pad 1 jointly, and corresponding with the shape of grinding table 5, that is, grinding pad 1 is aimed at and is set on the grinding table 5.Certainly, should be noted that when removing grinding pad material between the ditch line of rabbet joint L and form groove as those skilled in the art that it is enough smooth that the grinding pad surface treatment of groove both sides is got, to guarantee the flatness requirement of grinding wafer.
Embodiment two:
According to another embodiment of the present invention, the invention provides a kind of lapping device that comprises above-mentioned grinding pad, this lapping device also comprises first conveying device.Described grinding pad is arranged on the grinding table, and described grinding pad comprises for first milling zone that grinds crystal round fringes, and second milling zone that is used for grinding whole crystal column surface; Has groove between first milling zone of described grinding pad and second milling zone.Described groove does not enter second milling zone in order to isolate lapping liquid when grinding crystal round fringes.And described first milling zone, second milling zone and groove constitute the shape of grinding pad jointly, and corresponding with the shape of described grinding table.
With reference to figure 7, Fig. 7 grinds the cutaway view of wafer for embodiment of the invention lapping device.This lapping device comprises: grinding table 5, be used for placing grinding pad, described grinding pad comprises for first milling zone 11 that grinds crystal round fringes, and second milling zone 12 that is used for grinding whole crystal column surface, has groove 13 between first milling zone of described grinding pad and second milling zone; Grinding head 6 is used for the clamping wafer and grinds; Wafer 7 to be ground is arranged on the grinding head 6; And conveying device 8 is arranged on the top of grinding table 5, required liquid when grinding wafer 7 in order to supply.
The profile of the described groove 13 between described first milling zone 11, second milling zone 12 is curved.Described groove 13 can be the band of arc, and the band of described arc comprises arc and outer arcuate, and the sidewall near first milling zone 11 of groove 13 is arc, and the sidewall near second milling zone 12 of groove 13 is outer arcuate.The diameter of described arc is 0.5cm～5cm.The width of described groove is 0.5cm～2cm.Will be appreciated that the surface size according to grinding pad and wafer to be processed, as those skilled in the art, can in above-mentioned scope, suitably adjust the size of first milling zone and groove width.
Further, conveying device 8 comprises two transfer passages, carries lapping liquid or cleaning fluid respectively.Lapping liquid comprises the required chemical reagent of planarization and abrasive grains, and the two mixes the back and becomes thick liquid, is ejected on the grinding pad 1 by conveying device.Cleaning fluid is used for removing the grinding byproducts such as particle that process of lapping produces, and cleaning fluid for example can be deionized water.
Conveying device 8 is supplied lapping liquid or cleaning fluid respectively with controllable mode.It for example is the needs that grind crystal round fringes separately or grind whole crystal column surface according to the needs that grind wafer that described controllable mode refers to, specifically will elaborate hereinafter.
As one embodiment of the invention, this conveying device can rotating mode be arranged on the grinding table, when only needing to grind crystal round fringes, rotate this conveying device, make the liquid outlet of this conveying device be positioned at the top of first milling zone, in order to the first milling zone atomizing of liquids, and the liquid that conveying device is sprayed is not entered second milling zone by trench isolations; And when needs grind whole crystal column surface, rotate this conveying device, make the liquid outlet of this conveying device be positioned at the top of second milling zone of grinding pad, to the second milling zone atomizing of liquids of grinding pad.
As another embodiment of the present invention, two conveying devices can also be set respectively, the liquid outlet of these two conveying devices lays respectively at first milling zone and second milling zone top of grinding pad.Wherein, described first conveying device is in order to the first milling zone jet surface liquid, and described second conveying device is in order to the second milling zone jet surface liquid, and the liquid that first conveying device is sprayed is not entered second milling zone by trench isolations.
Therefore, utilize the lapping device of grinding pad of the present invention, form the purpose that first milling zone can realize grinding separately crystal round fringes by the control conveying device with at grinding pad.
Embodiment three:
Below in conjunction with accompanying drawing the above-mentioned lapping device of use of the present invention is elaborated to the Ginding process that crystal round fringes grinds separately.
According to an embodiment more of the present invention, provide a kind of Ginding process that utilizes the lapping device of aforementioned grinding pad.Fig. 9 uses the schematic flow sheet of the Ginding process of above-mentioned lapping device for the embodiment of the invention.This Ginding process comprises:
Step S1 provides grinding pad, places on the rotatable grinding table, and described grinding pad comprises first milling zone and second milling zone, has groove between described first milling zone and second milling zone;
Step S2 provides wafer, with described wafer load on grinding head;
Step S3 provides first conveying device, places grinding pad top, described first conveying device, required liquid when grinding wafer in order to supply;
Step S4 when needs grind whole crystal column surface, grinds the wafer process and comprises: adopt second milling zone that whole crystal column surface is ground, then, adopt first milling zone that the edge of wafer is ground;
Step S5 when only needing to grind crystal round fringes, adopts first milling zone that the edge of wafer is ground.
Method according to the formation grinding pad of aforementioned embodiments, the grinding pad that comprises first milling zone 11 and second milling zone 12 is arranged on the grinding table 5, grinding head 6 carries wafer 7 and rides over downwards on the grinding pad, required liquid when conveying device 8 is ground wafer in order to supply.
Below in conjunction with reference to figure 7 and Fig. 9 Ginding process of the present invention being elaborated.
S1 is described according to step, and grinding pad is provided, and places on the rotatable grinding table 5.This grinding pad comprises: first milling zone 11, be arranged at the grinding pad edge, and be used for grinding crystal round fringes; Second milling zone 12, described second milling zone holds whole wafer, is used for grinding whole crystal column surface; Wherein, first milling zone of described grinding pad separates setting with second milling zone by groove 13.
S2 is described according to step, and wafer 7 is provided, and described wafer is arranged on the grinding head 6.Because the grinding pad that adopts among the present invention has first milling zone 11 and second milling zone 12 respectively, therefore, wafer to be ground is according to the needs that grind, namely, if need to grind whole crystal column surface, then wafer is positioned over second milling zone 12 (shown in solid line part among Fig. 7) of grinding pad; If need to grind separately crystal round fringes, then wafer be positioned on the grinding pad, and make crystal round fringes be arranged in first milling zone 11 (shown in Fig. 7 dotted portion).
Except aforementioned independent grinding crystal round fringes or grind the needs of whole crystal column surface, when grinding crystal round fringes separately, also needing to consider the needs of removed crystal round fringes width, also is the width (the folded width of two unidirectional arrow among Fig. 8) that crystal round fringes enters first milling zone 11.As one embodiment of the invention, this width can arrange in grinding operation parameter (recipe) in advance, so can control the position of wafer to be ground on grinding pad by the movement of control grinding head, with according to required grinding wafer.
S3 is described according to step, and first conveying device is provided, and places grinding pad top, described first conveying device, required liquid when grinding wafer in order to supply.
According to one embodiment of the invention, the required liquid of wafer is ground in conveying device 8 supplies, can carry lapping liquid or cleaning fluid respectively.Lapping liquid comprises the required chemical reagent of planarization and abrasive grains.Cleaning fluid for example can be deionized water.
S4 is described according to step, when needs grind whole crystal column surface, adopts 12 pairs of whole crystal column surfaces of second milling zone to grind, and adopts the edge of 11 pairs of wafers of first milling zone to grind;
When needs ground whole crystal column surface, wafer 7 was positioned at second milling zone 12, and spin finishing head 6 and grinding table 5 are to grind whole wafer 7 surfaces; When whole crystal column surface is ground, to second milling zone, 12 jet grinding liquid.Then, grinding head carries wafer and moves to 11 pairs of crystal round fringes of first milling zone and grind, and after whole crystal column surface was ground, jet cleaning liquid cleaned to the whole surface of grinding pad.Will be appreciated that, though above-described embodiment has provided the whole crystal column surface of first grinding, grind the method for crystal round fringes then separately, as other embodiment of the present invention, also can grind crystal round fringes earlier separately, and then grind whole crystal column surface, thereby realize the CMP technology to whole crystal column surface.
As one embodiment of the invention, can be by in grinding operation parameter (recipe), arranging in advance, the position of wafer to be ground on grinding pad controlled in movement by the control grinding head, for example, when grinding whole crystal column surface, make wafer only be arranged in second milling zone and grind.
S5 is described according to step, when only needing to grind crystal round fringes, adopts the edge of 11 pairs of wafers of first milling zone to grind.
When only needing to grind crystal round fringes, according to crystal round fringes width to be ground, the control grinding head moves, make grinding head 6 adsorbed wafers 7 enter first milling zone 11, keep grinding table 5 static, and only drive wafer 7 rotations with grinding head 6, conveying device 8 is to first milling zone, 11 jet grinding liquid, spray deionized water to second milling zone 12 simultaneously, with the second milling zone surface of " lubricating " grinding pad.After crystal round fringes was ground, jet cleaning liquid cleaned to the whole surface of grinding pad.
Why keeping grinding table 5 static, is because crystal round fringes scope to be ground is less relatively, if grinding head 6 and grinding table 5 the two rotate simultaneously, only be positioned at possibly can't accurately control crystal round fringes to be ground in first milling zone 11.
Because grinding pad 1 is provided with a plurality of first milling zones 11, when first milling zone 11 after grinding after a while, reach the CMP of this first milling zone 11 during service life, can carry wafer by grinding head and move to the operation that next first milling zone 11 continues to grind separately crystal round fringes this moment.
Therefore, from the above, because crystal round fringes to be ground is positioned at first milling zone, the lapping liquid that conveying device is sprayed also only rests on first milling zone, and under the rotation of grinding head, making only has crystal round fringes to be ground.When grinding crystal round fringes, crystal circle center's zone most surfaces is positioned at second milling zone, because not having lapping liquid at second milling zone exists, therefore the central area of wafer can't be ground, and can guarantee not scratch of grinding pad crystal circle center area surfaces by spray deionized water to second milling zone again, so just realize independent grinding crystal round fringes, be unlikely to the purpose in overmastication crystal circle center zone again.And, because the setting of groove not only can intercept unnecessary lapping liquid and enter second milling zone when grind crystal round fringes separately, again can so that residues such as lapping liquid waste liquid in time discharge.
When below elaborating independent grinding crystal round fringes, conveying device is as how controllable mode supply lapping liquid or cleaning fluid:
When lapping device comprises a conveying device that arranges in rotating mode, turn this conveying device this moment, make the liquid outlet of this conveying device be positioned at the top of first milling zone of grinding pad, preferable, the conveying device liquid outlet sprays towards the contact-making surface center of crystal round fringes and first milling zone, and the liquid that conveying device is sprayed is not entered second milling zone by trench isolations, after CMP, this conveying device jet cleaning liquid is removed residues such as grinding waste liquid to first milling zone (also can be whole grinding pad) jet surface cleaning fluid.
When lapping device comprised two conveying devices, the first conveying device liquid outlet was arranged on first milling zone top, and the second conveying device liquid outlet is arranged on second milling zone top.When grinding crystal round fringes, the first conveying device work, and the liquid that sprays is not entered second milling zone by trench isolations, and second not jet grinding of the conveying device liquid, but can be when grinding crystal round fringes, continue to spray deionized water, play the effect of " lubricating ", guarantee that the crystal circle center zone is unlikely to by grinding pad surface scratch.After CMP, first and second conveying devices all can jet cleaning liquid, removes residues such as grinding waste liquid to first milling zone (also can be whole grinding pad) jet surface cleaning fluid.
That is to say, no matter which kind of set-up mode is conveying device be, as long as guarantee that lapping liquid only rests on first milling zone and gets final product when only needing to grind crystal round fringes.
Below elaborate when grinding whole crystal column surface, conveying device is as how controllable mode supply lapping liquid or cleaning fluid:
When lapping device comprises a conveying device that arranges in rotating mode, turn this conveying device this moment, make the liquid outlet of this conveying device be positioned at the top of second milling zone of grinding pad, preferable, be to be positioned at second milling zone central area top, and conveying device to the second milling zone jet surface lapping liquid to grind whole crystal column surface, after CMP, to second milling zone (also can be whole grinding pad) jet surface cleaning fluid, remove residues such as grinding waste liquid.
When lapping device comprised two conveying devices, the first conveying device liquid outlet was arranged on first milling zone top, and the second conveying device liquid outlet is arranged on second milling zone top.When grinding whole crystal column surface, first not jet grinding of the conveying device liquid (because the liquid of its injection can't be entered second milling zone by trench isolations), and grind whole crystal column surface by the second conveying device jet grinding liquid, after CMP, first and second conveying devices all can jet cleaning liquid, to second milling zone (also can be whole grinding pad) jet surface cleaning fluid, remove residues such as grinding waste liquid.
In conjunction with the description in the aforementioned background art, utilize grinding pad of the present invention, lapping device and Ginding process thereof can have two kinds of application under the different situations.
Use 1: wafer is carried out the CMP operation, solve CMP and grind inhomogeneous problem.
Utilize grinding pad of the present invention, lapping device and Ginding process thereof, at first grind whole crystal column surface: when grinding head carries wafer and is positioned at second milling zone, described grinding table and grinding head all rotate to grind whole crystal column surface, and conveying device is to whole grinding pad surface, perhaps only to the second milling zone jet grinding liquid.After the full wafer wafer ground through CMP, crystal circle center zone and fringe region phenomenon in uneven thickness had appearred.
Then, grind crystal round fringes separately: grinding head is according to the setting in the grinding operation parameter, carry wafer and move to first milling zone, crystal round fringes is contacted with first milling zone, the grinding table that stops the rotation, and grinding head rotates to grind crystal round fringes, at this moment, the lapping liquid that conveying device is sprayed can't be entered second milling zone by trench isolations, only rests on first milling zone.
Will be appreciated that, though above-described embodiment has provided the whole crystal column surface of first grinding, grind the method for crystal round fringes then separately, as other embodiment of the present invention, also can grind crystal round fringes earlier separately, and then grind whole crystal column surface, can solve CMP equally and grind inhomogeneous problem.
In a word, utilize above-mentioned Ginding process, realized the purpose of independent grinding crystal round fringes, solved the non-uniformity problem that CMP grinds, can not make crystal circle center's zone overmastication simultaneously again.
Use 2: for because the situation about need remove separately the film of crystal round fringes that other technology causes.
At above-mentioned situation, unnecessary whole wafer is ground, only need to grind crystal round fringes.Utilize Ginding process of the present invention, grinding head carries pending wafer and moves to first milling zone, crystal round fringes is contacted with first milling zone, keep grinding table static, and grinding head rotates to grind crystal round fringes, at this moment, the liquid that conveying device is sprayed only rests on first milling zone, has realized removing the purpose of crystal round fringes film.
First milling zone and second milling zone of the present invention by being separated from each other grinding pad setting, when crystal round fringes is positioned over first milling zone, injection by the control lapping liquid makes lapping liquid not enter second milling zone, thereby realizes grinding separately the purpose of crystal round fringes; And when wafer is positioned at second milling zone, then still can grind whole crystal column surface.
Therefore, the present invention is by adjusting the structure of grinding pad, solved the technical problem that can not grind the crystal round fringes zone separately that prior art exists, realized both can grinding whole crystal column surface separately, the crystal round fringes zone be can grind separately again, the central area of grinding wafer and the uniformity of fringe region improved; Because removed the residue (or the grinding residue that causes after grinding of CMP, or the thin film residue removed of the need that produce in other technologies) of crystal round fringes, semiconductor devices is produced yield and is also improved greatly; And to the improvement of grinding pad, can't improve production cost.
Though the present invention with preferred embodiment openly as above; but it is not to limit the present invention; any those skilled in the art without departing from the spirit and scope of the present invention; can utilize method and the technology contents of above-mentioned announcement that technical solution of the present invention is made possible change and modification; therefore; every content that does not break away from technical solution of the present invention; to any simple modification, equivalent variations and modification that above embodiment does, all belong to the protection domain of technical solution of the present invention according to technical spirit of the present invention.
Claims (14)
1. a grinding pad is characterized in that, comprising:
First milling zone is arranged at the grinding pad edge, is used for grinding crystal round fringes;
Second milling zone, described second milling zone can hold whole wafer at least, is used for grinding whole crystal column surface;
Wherein, has groove between first milling zone of described grinding pad and second milling zone.
2. grinding pad as claimed in claim 1 is characterized in that, described grinding pad has a plurality of first milling zones.
3. grinding pad as claimed in claim 2 is characterized in that, the profile of described groove is curved.
4. grinding pad as claimed in claim 3 is characterized in that, described groove comprises arc, and the diameter of described arc is 0.5cm～5cm.
5. grinding pad as claimed in claim 1 is characterized in that, the width of described groove is 0.5cm～2cm.
6. lapping device that comprises each described grinding pad of claim 1～5, described lapping device also wraps first conveying device.
7. lapping device as claimed in claim 6, it is characterized in that, described first conveying device can turn to first milling zone top with to the first milling zone jet surface liquid, and described first conveying device also can turn to second milling zone top with to the second milling zone jet surface liquid.
8. lapping device as claimed in claim 6, it is characterized in that, described lapping device also comprises second conveying device, and described first conveying device is in order to the first milling zone jet surface liquid, and described second conveying device is in order to the second milling zone jet surface liquid.
9. a Ginding process is characterized in that, comprising:
Grinding pad is provided, places on the rotatable grinding table, described grinding pad comprises first milling zone and second milling zone, has groove between described first milling zone and second milling zone;
Wafer is provided, with described wafer load on grinding head;
First conveying device is provided, places described grinding pad top, described first conveying device, required liquid when grinding wafer in order to supply;
When needs grind whole crystal column surface, grind the wafer process and comprise: adopt second milling zone that whole crystal column surface is ground, adopt first milling zone that the edge of wafer is ground;
When only needing to grind crystal round fringes, adopt first milling zone that the edge of wafer is ground.
10. Ginding process as claimed in claim 9 is characterized in that, when whole crystal column surface is ground, and jet grinding liquid to the second milling zone.
11. Ginding process as claimed in claim 9 is characterized in that, when only whole crystal round fringes being ground, and the grinding head rotation, it is static that grinding table keeps.
12. Ginding process as claimed in claim 11 is characterized in that, when only grinding crystal round fringes, jet grinding liquid to the first milling zone sprays deionized water to the second milling zone simultaneously.
13. Ginding process as claimed in claim 9 is characterized in that, after whole crystal column surface and crystal round fringes were ground, jet cleaning liquid cleaned to the whole surface of grinding pad.
14. Ginding process as claimed in claim 9 is characterized in that, described first milling zone has a plurality of, when first milling zone reaches CMP during service life, carries wafer by grinding head and moves to another first milling zone grinding crystal round fringes.
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| CN201110453496.4A CN103182676B (en) | 2011-12-29 | 2011-12-29 | Grinding pad, the lapping device using this grinding pad and Ginding process |
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| CN201110453496.4A CN103182676B (en) | 2011-12-29 | 2011-12-29 | Grinding pad, the lapping device using this grinding pad and Ginding process |
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| CN103182676B CN103182676B (en) | 2015-10-14 |
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| CN105619202A (en) * | 2016-02-26 | 2016-06-01 | 上海华力微电子有限公司 | Chemical mechanical grinding device and chemical mechanical grinding method thereof |
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| CN110842754A (en) * | 2019-11-14 | 2020-02-28 | 西安奕斯伟硅片技术有限公司 | Edge polishing system, edge polishing method and wafer |
| CN112720282A (en) * | 2020-12-31 | 2021-04-30 | 湖北鼎汇微电子材料有限公司 | Polishing pad |
| CN114290231A (en) * | 2021-12-30 | 2022-04-08 | 西安奕斯伟材料科技有限公司 | Polishing apparatus and polishing method |
| CN115488754A (en) * | 2022-09-30 | 2022-12-20 | 上海芯物科技有限公司 | CMP automatic film pasting device and method |
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