CN102115633A - Chemical mechanical polishing liquid - Google Patents
Chemical mechanical polishing liquid Download PDFInfo
- Publication number
- CN102115633A CN102115633A CN2009102476543A CN200910247654A CN102115633A CN 102115633 A CN102115633 A CN 102115633A CN 2009102476543 A CN2009102476543 A CN 2009102476543A CN 200910247654 A CN200910247654 A CN 200910247654A CN 102115633 A CN102115633 A CN 102115633A
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- Prior art keywords
- polishing
- silica sol
- polishing liquid
- chemical mechanical
- polishing fluid
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- 238000005498 polishing Methods 0.000 title claims abstract description 57
- 239000007788 liquid Substances 0.000 title claims abstract description 17
- 239000000126 substance Substances 0.000 title claims abstract description 16
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 27
- RMAQACBXLXPBSY-UHFFFAOYSA-N silicic acid Chemical compound O[Si](O)(O)O RMAQACBXLXPBSY-UHFFFAOYSA-N 0.000 claims abstract description 17
- 239000003795 chemical substances by application Substances 0.000 claims abstract description 14
- 238000007517 polishing process Methods 0.000 claims abstract description 7
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 claims description 39
- 239000012530 fluid Substances 0.000 claims description 22
- 239000008187 granular material Substances 0.000 claims description 13
- 239000002245 particle Substances 0.000 claims description 13
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical group [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 9
- 239000000463 material Substances 0.000 claims description 7
- 238000000034 method Methods 0.000 claims description 6
- QDRKDTQENPPHOJ-UHFFFAOYSA-N sodium ethoxide Chemical compound [Na+].CC[O-] QDRKDTQENPPHOJ-UHFFFAOYSA-N 0.000 claims description 3
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 claims description 2
- GHVZOJONCUEWAV-UHFFFAOYSA-N [K].CCO Chemical compound [K].CCO GHVZOJONCUEWAV-UHFFFAOYSA-N 0.000 claims description 2
- 239000000908 ammonium hydroxide Substances 0.000 claims description 2
- GSEJCLTVZPLZKY-UHFFFAOYSA-O triethanolammonium Chemical compound OCC[NH+](CCO)CCO GSEJCLTVZPLZKY-UHFFFAOYSA-O 0.000 claims description 2
- 239000000377 silicon dioxide Substances 0.000 abstract description 8
- 239000002131 composite material Substances 0.000 abstract 1
- 230000003750 conditioning effect Effects 0.000 abstract 1
- 230000007423 decrease Effects 0.000 abstract 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 24
- 235000012431 wafers Nutrition 0.000 description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 229960001866 silicon dioxide Drugs 0.000 description 6
- 235000012239 silicon dioxide Nutrition 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 229910021485 fumed silica Inorganic materials 0.000 description 4
- 239000002002 slurry Substances 0.000 description 4
- 239000003082 abrasive agent Substances 0.000 description 3
- 239000000356 contaminant Substances 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- 239000006185 dispersion Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000036571 hydration Effects 0.000 description 2
- 238000006703 hydration reaction Methods 0.000 description 2
- 230000001788 irregular Effects 0.000 description 2
- 239000006061 abrasive grain Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- LKTAGGFTWLWIJZ-UHFFFAOYSA-N dioxosilane Chemical compound O=[Si]=O.O=[Si]=O LKTAGGFTWLWIJZ-UHFFFAOYSA-N 0.000 description 1
- 238000007667 floating Methods 0.000 description 1
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000000750 progressive effect Effects 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/31051—Planarisation of the insulating layers
- H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
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- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Materials Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
The invention discloses a chemical mechanical polishing liquid, which comprises composite grinding agent and pH conditioning agent. By improving pH value of the polishing liquid and adopting mixed abrasive, the chemical mechanical polishing liquid of the present invention can reduce the phenomenon of removal rate of the polished edge being lower than intermediate area, effectively improve the damage possibility of chip at the wafer edge area, solve the problem of rapid decline of the edge removal rate generally existent with the silica sol based polishing liquid in silica polishing process, and raise polishing homogeneity.
Description
Technical field
The present invention relates to a kind of chemical mechanical polishing liquid, be specifically related to a kind of chemical mechanical polishing liquid that contains mixed-abrasive and pH regulator agent, and described chemical mechanical polishing liquid is used for the polishing process that silica dioxide medium material edge is removed.
Background technology
Silicon-dioxide is most widely used inter-level dielectric during present IC produces, for satisfying the requirement of photoetching, must adopt chemically machinery polished (CMP) technology that dielectric surface is carried out leveling processing, polishing speed, the surface contaminant index, the polishing homogeneity, be the several important evaluating index of dielectric material CMP, because silicon-dioxide is tetravalence silicon, be difficult to remove by redox method, still will be on the microcosmic by forming the surface hydration layer, make abrasive grain and crystal column surface generation deformation, form the chemical bond between the hydration layer of the hydroxyl of particle surface and silicon chip surface, under the effect of mechanical force, remove again, so the higher polishing fluid of solid content is adopted in the polishing of silica dioxide medium material usually, commonly used have fumed silica and a silica sol granule, adopts the polishing fluid of fumed silica water dispersion, because coating of particles is irregular, group removes into larger particles easily, thereby produces surperficial little scuffing.And adopt silicon sol is polishing fluid, remove and have reasonable surface contaminant index, can also reduce surperficial little scuffing, stable preferably, but exist the thickness of edge film on the low side during owing to future CVD silicon-dioxide, cause that the removal speed ratio region intermediate in the wafer edge will hang down more (see figure 1) in polishing process, this is the ubiquitous problem of silica sol based silicon oxide polishing fluid, just there is the slow problem of edge speed (seeing Table 2) in the at present commercially available product for example R1501 of ROHM AND HAAS, especially the influence of in the polishing of 200 millimeters wafers effectively being cut into slices in the edge is bigger, industry member mainly is to adopt the design that improves rubbing head at present, the pressure of perhaps adjusting retaining ring improves this problem, these are existing report in existing many documents, " Study on PolishingProfile at Wafer Edge by CMP Using Floating Head ", accurate engineering meeting will, 2000vol.66 (no.9), " wafer edge challanges ", TETSUO FUKUDA, Fujitsu, semicon.06 etc.But the rubbing head of the polishing machine platform of 8 cun wafers has only principal pressure district (membering
Ring) and two of retaining rings (trtaining ring) zone regulate pressure, the ability of improving is very limited, by the polishing fluid Formula Design, improve the slow-footed patent in edge and yet there are no report, this patent is intended to improve this problem by the change of the abrasive material of polishing fluid and pH value, obtain result preferably, can reach processing requirement.
Existing document all concentrates on the pressure distribution of improving rubbing head, or improves processing condition such as rubbing head design and improve the slow problem of edge speed, this patent first to edge speed slow-motion row the trial of slurry formula aspect, effect is apparent in view.
In the chemically machinery polished of dielectric material silicon-dioxide, usually adopt except that adopting fumed silica, it is the polishing fluid of abrasive material that the silicon sol of employing is also arranged, adopt the polishing fluid of fumed silica water dispersion, because coating of particles is irregular, group removes into larger particles easily, thereby produces surperficial little scuffing.And adopt silicon sol is polishing fluid, remove and have reasonable surface contaminant index, can also reduce surperficial little scuffing, stable preferably, and the polishing fluid of silica sol based exists a shortcoming, removal speed ratio region intermediate in the wafer edge will hang down morely exactly, and this is the more scabrous problem of such polishing fluid.The present invention adopts rising polishing fluid pH value, or adopts two kinds of methods of compound abrasive, can effectively improve the pattern at edge, reaches processing requirement.
Summary of the invention
Technical problem to be solved by this invention is to improve removal speed in edge in the silica dioxide medium material polishing process, improves the pattern of wafer edge and regulates the polishing selection ratio of silicon-dioxide to other material.
Chemical mechanical polishing liquid of the present invention contains multiple grinding agent and pH regulator agent.
Among the present invention, described multiple grinding agent is mixed in varing proportions by the silica sol granule of two kinds of different-grain diameters.
Among the present invention, the silica sol granule of described two kinds of different-grain diameters is: a kind of particle diameter is that silica sol granule and a kind of particle diameter of 30～100nm is the silica sol granule of 100～200nm.
Among the present invention, described particle diameter is that the content of the silica sol granule of 30～100nm is 1～20%, and described particle diameter is that the content of the silica sol granule of 100～200nm is 1～20%.
Among the present invention, the pH value of described polishing fluid is 10～12.
Among the present invention, described pH regulator agent is selected from sodium hydroxide, potassium hydroxide, ammonium hydroxide, sodium ethylate, potassium ethylate, or in the triethanol ammonium one or more.
A kind of finishing method, described finishing method comprises: in the polishing process that silica dioxide medium material edge is removed, polish with chemical mechanical polishing liquid of the present invention.
Positive progressive effect of the present invention is: by the pH of raising polishing fluid, and the polishing fluid that adopts mixed abrasive material, reduced the removal speed phenomenon low of polishing back edge than region intermediate, effectively improved the impaired possibility of wafer border area chip.
PH by changing slurry and adopt compounded abrasive to improve the polishing of silica dioxide medium material after
The slow phenomenon of speed is removed at crystal column surface homogeneity and edge.
Solve the polishing fluid problem that ubiquitous edge speed drops fast in the silicon-dioxide polishing process of silica sol based, improved the polishing homogeneity.
Description of drawings
Thickness distribution figure before the polishing of Fig. 1 silica wafers.
Fig. 2 polishes the removal rate distribution figure of wafer edge, back to the center.
Embodiment
Preparation embodiment
Further specify the present invention with embodiment below, but the present invention is not limited.Among the following embodiment, per-cent is mass percent.
Table 1 has provided the prescription of chemical mechanical polishing liquid embodiment 1～11 of the present invention and Comparative Examples 1-2, presses listed component and content thereof in the table 1, mixes in deionized water, is transferred to required pH value with the pH regulator agent, can make chemical mechanical polishing liquid.
Polishing condition: polishing machine platform: MIRRA
Polishing condition: principal pressure: 4.6psi
Retaining ring pressure: 6psi
Rubbing head rotating speed: 103 rev/mins
Polishing disk rotating speed: 107 rev/mins
Wafer: 8 inches PETEOS silicon chips
Flow rate of slurry: 150 ml/min
Diamond disk pressure: 6 pounds
Polishing time 1 minute
Polishing pad: IC1010
Table 1 chemical mechanical polishing liquid prepares embodiment 1～11 and Comparative Examples 1-2
| Silicon-dioxide | Silicon-dioxide | The pH regulator agent | pH | |
| Comparative Examples 1 | 20％SiO 2(60nm) | Potassium hydroxide | 10.5 | |
| Comparative Examples 2 | 20％SiO 2(120nm) | Potassium hydroxide | 10.5 | |
| Embodiment 1 | 15％SiO 2(60nm) | 5％SiO 2(120nm) | Potassium hydroxide | 10.5 |
| Embodiment 2 | 15％SiO 2(60nm) | 5％SiO 2(120nm) | Potassium hydroxide | 10.5 |
| Embodiment 3 | 15％SiO 2(60nm) | 5％SiO 2(120nm) | Potassium hydroxide | 10.5 |
| Embodiment 4 | 15％SiO 2(60nm) | 5％SiO 2(120nm) | Potassium hydroxide | 10.5 |
| Embodiment 5 | 15％SiO 2(60nm) | 5％SiO 2(120nm) | Sodium hydroxide | 10.5 |
| Embodiment 6 | 15％SiO 2(60nm) | 5％SiO 2(120nm) | Potassium hydroxide | 10.5 |
| Embodiment 7 | 1.0％SiO 2(60nm) | 20％SiO 2(120nm) | Sodium ethylate | 10.5 |
| Embodiment 8 | 15％SiO 2(60nm) | 5％SiO 2(120nm) | Potassium hydroxide | 11.5 |
| Embodiment 9 | 20％SiO 2(30nm) | ?1％SiO 2(200nm) | Potassium hydroxide | 11.5 |
| |
18％SiO 2(60nm) | ?2％SiO 2(120nm) | Potassium hydroxide | 11 |
| Embodiment 11 | 10％SiO 2(60nm) | ?10％SiO 2(120nm) | Potassium hydroxide | 11 |
Effect embodiment
Table 2 chemical mechanical polishing liquid effect embodiment 1～11 and Comparative Examples 1-2
By data in Fig. 1 and the table 1 as can be seen, adopt and can effectively improve the speed problem faster that descends in edge after the multiple grinding agent, the pH value that increases slurry also can reduce the speed that edge speed descends, and improves the polishing homogeneity.
Claims (7)
1. a chemical mechanical polishing liquid contains multiple grinding agent and pH regulator agent.
2. polishing fluid according to claim 1, described multiple grinding agent is mixed in varing proportions by the silica sol granule of two kinds of different-grain diameters.
3. polishing fluid according to claim 2, the silica sol granule of described two kinds of different-grain diameters is: a kind of particle diameter is that silica sol granule and a kind of particle diameter of 30～100nm is the silica sol granule of 100～200nm.
4. polishing fluid according to claim 3, described particle diameter are that the content of the silica sol granule of 30～100nm is 1～20%, and described particle diameter is that the content of the silica sol granule of 100～200nm is 1～20%.
5. polishing fluid according to claim 1, the pH value of described polishing fluid is 10～12.
6. polishing fluid according to claim 1, described pH regulator agent is selected from sodium hydroxide, potassium hydroxide, ammonium hydroxide, sodium ethylate, potassium ethylate, or in the triethanol ammonium one or more.
7. finishing method, described finishing method comprises: in the polishing process that silica dioxide medium material edge is removed, polish with each described chemical mechanical polishing liquid among the claim 1-6.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009102476543A CN102115633A (en) | 2009-12-30 | 2009-12-30 | Chemical mechanical polishing liquid |
| PCT/CN2010/002114 WO2011079512A1 (en) | 2009-12-30 | 2010-12-21 | Chemical mechanical polishing liquid |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009102476543A CN102115633A (en) | 2009-12-30 | 2009-12-30 | Chemical mechanical polishing liquid |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN102115633A true CN102115633A (en) | 2011-07-06 |
Family
ID=44214561
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2009102476543A Pending CN102115633A (en) | 2009-12-30 | 2009-12-30 | Chemical mechanical polishing liquid |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN102115633A (en) |
| WO (1) | WO2011079512A1 (en) |
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102372273A (en) * | 2011-08-23 | 2012-03-14 | 南通海迅天恒纳米科技有限公司 | Silica sol with double grain diameters and preparation method thereof |
| CN103484024A (en) * | 2013-09-13 | 2014-01-01 | 上海新安纳电子科技有限公司 | Chemico-mechanical polishing liquid for silicon dioxide dielectric materials and preparing method thereof |
| CN103897605A (en) * | 2012-12-27 | 2014-07-02 | 天津西美半导体材料有限公司 | Sapphire substrate polishing solution for single-sided polishing machine |
| CN104893587A (en) * | 2015-03-09 | 2015-09-09 | 江苏中晶科技有限公司 | Efficient C-oriented sapphire polishing solution and preparation method thereof |
| CN105153943A (en) * | 2015-09-10 | 2015-12-16 | 盐城工学院 | Anti-cleavage polishing solution for gallium oxide wafer and preparation method of anti-cleavage polishing solution |
| TWI619805B (en) * | 2011-11-08 | 2018-04-01 | 福吉米股份有限公司 | Polishing composition for a hard and brittle material, a method for polishing and manufacturing a hard and brittle material substrate |
| CN108949034A (en) * | 2018-08-17 | 2018-12-07 | 无锡易洁工业介质有限公司 | A kind of sapphire chemical mechanical polishing liquid and preparation method thereof |
| CN111662642A (en) * | 2020-07-13 | 2020-09-15 | 万华化学集团股份有限公司 | Sapphire polishing composition and preparation method thereof |
| CN112621557A (en) * | 2020-12-17 | 2021-04-09 | 江苏集萃精凯高端装备技术有限公司 | Polishing method of YAG wafer |
| CN113789127A (en) * | 2021-10-20 | 2021-12-14 | 博力思(天津)电子科技有限公司 | Silicon through hole copper film polishing solution |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1200066C (en) * | 2000-05-12 | 2005-05-04 | 日产化学工业株式会社 | Polishing composition |
| US6896591B2 (en) * | 2003-02-11 | 2005-05-24 | Cabot Microelectronics Corporation | Mixed-abrasive polishing composition and method for using the same |
| DE602005023557D1 (en) * | 2004-04-12 | 2010-10-28 | Jsr Corp | Aqueous dispersion for chemical mechanical polishing and chemical mechanical polishing |
| JP4776269B2 (en) * | 2005-04-28 | 2011-09-21 | 株式会社東芝 | Metal film CMP slurry and method for manufacturing semiconductor device |
| KR100750191B1 (en) * | 2005-12-22 | 2007-08-17 | 삼성전자주식회사 | Slurry composition, Chemical mechanical polishing method using the slurry composition and Method of manufacturing a Non-Volatile Memory device using the same |
-
2009
- 2009-12-30 CN CN2009102476543A patent/CN102115633A/en active Pending
-
2010
- 2010-12-21 WO PCT/CN2010/002114 patent/WO2011079512A1/en active Application Filing
Cited By (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102372273A (en) * | 2011-08-23 | 2012-03-14 | 南通海迅天恒纳米科技有限公司 | Silica sol with double grain diameters and preparation method thereof |
| CN102372273B (en) * | 2011-08-23 | 2014-10-08 | 江苏天恒纳米科技股份有限公司 | Silica sol with double grain diameters and preparation method thereof |
| TWI619805B (en) * | 2011-11-08 | 2018-04-01 | 福吉米股份有限公司 | Polishing composition for a hard and brittle material, a method for polishing and manufacturing a hard and brittle material substrate |
| CN103897605A (en) * | 2012-12-27 | 2014-07-02 | 天津西美半导体材料有限公司 | Sapphire substrate polishing solution for single-sided polishing machine |
| CN103484024A (en) * | 2013-09-13 | 2014-01-01 | 上海新安纳电子科技有限公司 | Chemico-mechanical polishing liquid for silicon dioxide dielectric materials and preparing method thereof |
| CN104893587A (en) * | 2015-03-09 | 2015-09-09 | 江苏中晶科技有限公司 | Efficient C-oriented sapphire polishing solution and preparation method thereof |
| CN105153943B (en) * | 2015-09-10 | 2017-08-04 | 盐城工学院 | Anti- cleavage polishing fluid of gallium oxide wafer and preparation method thereof |
| CN105153943A (en) * | 2015-09-10 | 2015-12-16 | 盐城工学院 | Anti-cleavage polishing solution for gallium oxide wafer and preparation method of anti-cleavage polishing solution |
| CN108949034A (en) * | 2018-08-17 | 2018-12-07 | 无锡易洁工业介质有限公司 | A kind of sapphire chemical mechanical polishing liquid and preparation method thereof |
| CN108949034B (en) * | 2018-08-17 | 2020-10-09 | 无锡易洁工业介质有限公司 | Sapphire chemical mechanical polishing solution and preparation method thereof |
| CN111662642A (en) * | 2020-07-13 | 2020-09-15 | 万华化学集团股份有限公司 | Sapphire polishing composition and preparation method thereof |
| CN112621557A (en) * | 2020-12-17 | 2021-04-09 | 江苏集萃精凯高端装备技术有限公司 | Polishing method of YAG wafer |
| CN113789127A (en) * | 2021-10-20 | 2021-12-14 | 博力思(天津)电子科技有限公司 | Silicon through hole copper film polishing solution |
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| Publication number | Publication date |
|---|---|
| WO2011079512A1 (en) | 2011-07-07 |
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Application publication date: 20110706 |