CN113789126B - Silicon wafer chemical mechanical polishing solution and application thereof - Google Patents
Silicon wafer chemical mechanical polishing solution and application thereof Download PDFInfo
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- 238000005498 polishing Methods 0.000 title claims abstract description 91
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 80
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 80
- 239000010703 silicon Substances 0.000 title claims abstract description 80
- 239000000126 substance Substances 0.000 title claims abstract description 34
- 239000004094 surface-active agent Substances 0.000 claims abstract description 46
- 235000012431 wafers Nutrition 0.000 claims description 71
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 21
- 229920001213 Polysorbate 20 Polymers 0.000 claims description 14
- 239000000256 polyoxyethylene sorbitan monolaurate Substances 0.000 claims description 14
- 235000010486 polyoxyethylene sorbitan monolaurate Nutrition 0.000 claims description 14
- GLUUGHFHXGJENI-UHFFFAOYSA-N Piperazine Chemical compound C1CNCCN1 GLUUGHFHXGJENI-UHFFFAOYSA-N 0.000 claims description 11
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 10
- 239000000377 silicon dioxide Substances 0.000 claims description 8
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 claims description 6
- 230000000844 anti-bacterial effect Effects 0.000 claims description 6
- 239000003899 bactericide agent Substances 0.000 claims description 6
- 239000002245 particle Substances 0.000 claims description 6
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 claims description 6
- 239000002736 nonionic surfactant Substances 0.000 claims description 5
- 229940068918 polyethylene glycol 400 Drugs 0.000 claims description 5
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 5
- 239000002105 nanoparticle Substances 0.000 claims description 4
- 239000003002 pH adjusting agent Substances 0.000 claims description 4
- HXKKHQJGJAFBHI-UHFFFAOYSA-N 1-aminopropan-2-ol Chemical compound CC(O)CN HXKKHQJGJAFBHI-UHFFFAOYSA-N 0.000 claims description 3
- HZAXFHJVJLSVMW-UHFFFAOYSA-N 2-Aminoethan-1-ol Chemical compound NCCO HZAXFHJVJLSVMW-UHFFFAOYSA-N 0.000 claims description 3
- PIICEJLVQHRZGT-UHFFFAOYSA-N Ethylenediamine Chemical compound NCCN PIICEJLVQHRZGT-UHFFFAOYSA-N 0.000 claims description 3
- GSEJCLTVZPLZKY-UHFFFAOYSA-N Triethanolamine Chemical compound OCCN(CCO)CCO GSEJCLTVZPLZKY-UHFFFAOYSA-N 0.000 claims description 3
- ZBCBWPMODOFKDW-UHFFFAOYSA-N diethanolamine Chemical compound OCCNCCO ZBCBWPMODOFKDW-UHFFFAOYSA-N 0.000 claims description 3
- 229940102253 isopropanolamine Drugs 0.000 claims description 3
- 229940113116 polyethylene glycol 1000 Drugs 0.000 claims description 3
- 229940113115 polyethylene glycol 200 Drugs 0.000 claims description 3
- 229940057847 polyethylene glycol 600 Drugs 0.000 claims description 3
- 229940085675 polyethylene glycol 800 Drugs 0.000 claims description 3
- 235000010482 polyoxyethylene sorbitan monooleate Nutrition 0.000 claims description 3
- 229920000053 polysorbate 80 Polymers 0.000 claims description 3
- 229940073455 tetraethylammonium hydroxide Drugs 0.000 claims description 3
- LRGJRHZIDJQFCL-UHFFFAOYSA-M tetraethylazanium;hydroxide Chemical compound [OH-].CC[N+](CC)(CC)CC LRGJRHZIDJQFCL-UHFFFAOYSA-M 0.000 claims description 3
- LPSKDVINWQNWFE-UHFFFAOYSA-M tetrapropylazanium;hydroxide Chemical compound [OH-].CCC[N+](CCC)(CCC)CCC LPSKDVINWQNWFE-UHFFFAOYSA-M 0.000 claims description 3
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 claims description 2
- 239000000908 ammonium hydroxide Substances 0.000 claims description 2
- 229910017604 nitric acid Inorganic materials 0.000 claims description 2
- 125000004193 piperazinyl group Chemical group 0.000 claims 1
- 230000003746 surface roughness Effects 0.000 abstract description 12
- 230000000052 comparative effect Effects 0.000 description 20
- 239000002120 nanofilm Substances 0.000 description 10
- 238000000034 method Methods 0.000 description 9
- 230000004048 modification Effects 0.000 description 6
- 238000012986 modification Methods 0.000 description 6
- 230000008569 process Effects 0.000 description 5
- 239000000523 sample Substances 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 4
- 239000002002 slurry Substances 0.000 description 4
- 238000001179 sorption measurement Methods 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- WBIQQQGBSDOWNP-UHFFFAOYSA-N 2-dodecylbenzenesulfonic acid Chemical compound CCCCCCCCCCCCC1=CC=CC=C1S(O)(=O)=O WBIQQQGBSDOWNP-UHFFFAOYSA-N 0.000 description 3
- 239000002202 Polyethylene glycol Substances 0.000 description 3
- 229940060296 dodecylbenzenesulfonic acid Drugs 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000007517 polishing process Methods 0.000 description 3
- 229920001223 polyethylene glycol Polymers 0.000 description 3
- 230000009471 action Effects 0.000 description 2
- 230000006978 adaptation Effects 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 239000002210 silicon-based material Substances 0.000 description 2
- -1 speed promoter Substances 0.000 description 2
- 239000006087 Silane Coupling Agent Substances 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 239000003963 antioxidant agent Substances 0.000 description 1
- 230000003078 antioxidant effect Effects 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 239000011258 core-shell material Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229920000136 polysorbate Polymers 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- RMAQACBXLXPBSY-UHFFFAOYSA-N silicic acid Chemical compound O[Si](O)(O)O RMAQACBXLXPBSY-UHFFFAOYSA-N 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 230000008542 thermal sensitivity Effects 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
The invention discloses a silicon wafer chemical mechanical polishing solution and application thereof. The chemical mechanical polishing solution is used for polishing a silicon wafer, and a certain amount of specific surfactant is added, so that good surface roughness can be obtained, and the surface quality of the polished silicon wafer is improved.
Description
Technical Field
The invention relates to the technical field of chemical mechanical polishing, in particular to a chemical mechanical polishing solution for a semiconductor silicon sheet material.
Background
As is known, silicon materials have excellent properties such as unidirectional conductivity, thermal sensitivity, photoelectric properties, doping properties, etc., and can be grown into large-sized high-purity crystals with abundant reserves and low prices, thus becoming the most widely and most important semiconductor base material in global applications. Silicon wafers are basic substrate materials for manufacturing chips, and more than 90% of chips and sensors in the global semiconductor market are manufactured based on silicon materials. The roughness of the surface of the silicon wafer is one of the important factors influencing the etching line width of the integrated circuit, and along with the continuous improvement of the integration level of the integrated circuit, the characteristic dimension is continuously reduced, and the requirements on the processing precision and the surface quality of the silicon wafer are higher and higher. For example, the semiconductor industry society has requirements for silicon wafers having feature sizes of 0.065-0.13 μm: global flatness <2 μm, surface roughness up to nanometer and sub-nanometer level, very small residual stress on the surface and loss of layers or no damage.
The chemical mechanical polishing technology is used for carrying out planarization treatment on the surface of a silicon wafer, and is one of essential process steps in the technological era after the integrated circuit manufacturing technology enters deep submicron. The Chemical Mechanical Polishing (CMP) process uses an abrasive-containing mixture and a polishing pad to polish the surface of a silicon wafer by chemical and mechanical action. In typical CMP, a silicon wafer substrate is brought into direct contact with a rotating polishing pad while a carrier is used to apply pressure to the backside of the substrate. During polishing, an abrasive and a chemically active solution (commonly referred to as a polishing slurry or slurry) are applied to the polishing pad, which chemically reacts with the surface of the wafer being polished, and the polishing pad and the platen are rotated to produce relative motion while maintaining a downward force on the back surface of the substrate to perform the polishing process.
Generally, the chemical mechanical polishing process of a silicon wafer, after the slicing and grinding process, is divided into 2 steps: the first step is to remove the surface damage caused by cutting and grinding processes at a fast and efficient removal rate by adopting higher down pressure; and in the second step, the lower down pressure is adopted, the surface damage layer is removed at a lower removal rate, and good surface roughness is obtained, so that planarization is realized. However, the surface roughness of the silicon wafer is still large due to the abrasive hardness, mechanical action, and the like, and surface defects such as scratches, pits, and the like still exist on the surface. How to obtain good surface roughness has been a hot spot of research in the industry. The patent CN101974296A adopts a composite nano abrasive with a core-shell structure, and the patent CN102660195A carries out surface modification on the abrasive, and both the patent CN102660195A and the patent CN are methods for reducing the hardness of the surface of the abrasive so as to reduce the surface scratch and damage caused by the abrasive. However, the decrease in the hardness of the abrasive causes a decrease in the polishing rate, an increase in the polishing time, and a decrease in the polishing efficiency.
Therefore, in the CMP process of silicon wafers, how to obtain good surface roughness without reducing the polishing rate is still an important problem to be solved at present.
Disclosure of Invention
The invention aims to overcome the defects of the prior art, and a small amount of special surfactant is added, so that the silicon wafer can obtain good surface roughness after a CMP process, and the surface quality of the polished silicon wafer is improved.
The invention also aims to provide the application of the silicon wafer chemical mechanical polishing solution in silicon wafer chemical mechanical polishing.
In order to achieve the above purpose, the invention adopts the following technical scheme:
the chemical mechanical polishing solution for the silicon wafer comprises, by weight, 5% -20% of silicon oxide abrasive, 0.2% -12% of rate accelerator, 0.001% -0.02% of surfactant and the balance of water.
In a preferred embodiment, the silicon wafer chemical mechanical polishing solution comprises, by mass, 10% to 20% of a silicon oxide abrasive, 0.5% to 10% of a rate accelerator, 0.003% to 0.015% of a surfactant, and the balance water, based on the total weight of the polishing solution.
In a specific embodiment, the rate accelerator is selected from one or more of ethylenediamine, tetramethylammonium hydroxide, tetraethylammonium hydroxide, tetrapropylammonium hydroxide, piperazine, monoethanolamine, diethanolamine, triethanolamine or isopropanolamine, preferably piperazine.
In a specific embodiment, the surfactant is a nonionic surfactant with a molecular weight of less than or equal to 1000 and an HLB value of more than or equal to 16 (the HLB value range of the nonionic surfactant is 0-20), and is selected from one or more of Tween 20, Tween 80, polyethylene glycol 200, polyethylene glycol 400, polyethylene glycol 600, polyethylene glycol 800 and polyethylene glycol 1000, preferably Tween 20 or polyethylene glycol 400, and more preferably Tween 20.
In a specific embodiment, the silica abrasive is silica nanoparticles, preferably having a particle size of 30-120 nm.
The silicon wafer chemical mechanical polishing solution of the invention can also comprise a pH regulator and/or a bactericide, and other additives which are conventional in the field, such as an antioxidant and the like. Wherein the pH adjusting agent is selected from HNO3Potassium hydroxide, ammonium hydroxide, and the pH of the polishing solution is about 10.5 to 11.0 after adjustment. The bactericide is, for example, MBS type bactericide with the mass content of 0.04-0.2 percent, namely 100g of polishing solution is prepared, 0.04-0.2 g of bactericide is added, and the balance of water is added after other components with the mass content are added. The chemical mechanical polishing solution of the present invention is prepared by the same method except that the components are mixed in percentage by mass.
Compared with the prior art, the invention has the beneficial effects that:
1) the prior art almost reduces the surface scratch caused by the abrasive by reducing the hardness of the surface of the abrasive, which not only increases the processing cost of the abrasive modification, but also causes the problem of reducing the polishing rate due to the reduction of the hardness of the abrasive. The invention adopts the micromolecule surfactant with stronger hydrophilicity, utilizes the weaker adsorption force of the surfactant on the surface of the silicon chip, ensures that the convex part on the surface of the silicon chip is not protected by the surfactant under a certain pressure condition, and the pit on the surface of the silicon chip is protected by the surfactant, thereby being beneficial to the planarization of the surface of the silicon chip on the premise of not influencing the polishing rate.
2) In the prior art, Tween, polyethylene glycol and the like are used for improving the dispersion stability of the polishing solution, and the dosage of the surfactant is usually 0.05-2%. The applicant unexpectedly found that when the amount of the surfactant is more than 500ppm, the surfactant molecules are adsorbed on the surface of the silicon wafer in the form of a multi-layer molecular film during the polishing process, so that the whole surface of the silicon wafer is protected, and the polishing rate is influenced. The invention adopts a very small amount of surfactant (0.001-0.02 wt%), so that the surfactant can be only dynamically adsorbed at the pits on the surface of the silicon wafer, thereby improving the surface flatness of the silicon wafer while not affecting the polishing rate.
Detailed Description
The following examples will further illustrate the method provided by the present invention in order to better understand the technical solution of the present invention, but the present invention is not limited to the listed examples, and should also include any other known modifications within the scope of the claims of the present invention.
A chemical-mechanical polishing liquid for silicon chip is composed of abrasive particles, speed promoter, surfactant and water.
Specifically, wherein the abrasive particles are silica nanoparticles having a particle size of 30-120nm, for example including but not limited to 30nm, 45nm, 50nm, 60nm, 70nm, 0nm, 90nm, 100nm, 110nm, 120 nm; the concentration of the grinding particles is 5-20% by mass, for example, including but not limited to 5%, 8%, 10%, 13%, 15%, 18% or 20%, preferably 10-20%.
The rate accelerator is an amine compound, and is selected from one or more of ethylenediamine, tetramethylammonium hydroxide, tetraethylammonium hydroxide, tetrapropylammonium hydroxide, piperazine, monoethanolamine, diethanolamine, triethanolamine or isopropanolamine, and preferably piperazine. The concentration of the rate accelerator is 0.2-12% by mass, for example, including but not limited to 0.2%, 0.3%, 0.5%, 1%, 3%, 5%, 7%, 10% or 12%, preferably 0.5-10%.
The surfactant is a nonionic surfactant with the molecular weight of less than or equal to 1000 and the HLB value of more than or equal to 16 (the HLB value range of the nonionic surfactant is 0-20), and is selected from one or more of Tween 20, Tween 80, polyethylene glycol 200, polyethylene glycol 400, polyethylene glycol 600, polyethylene glycol 800 and polyethylene glycol 1000, preferably Tween 20. The concentration of the surfactant is 0.001-0.02% by mass, for example, but not limited to, 0.001%, 0.002%, 0.005%, 0.01%, 0.015%, 0.018%, or 0.02%, preferably 0.003-0.015%.
The silicon wafer chemical mechanical polishing solution disclosed by the invention comprises 5-20% of silicon oxide abrasive, 0.2-12% of speed accelerator, 0.001-0.02% of surfactant and the balance of water by mass percent. In a preferred embodiment, the chemical mechanical polishing solution comprises, by mass, 10% to 20% of a silica abrasive, 0.5% to 10% of a rate accelerator, 0.003% to 0.015% of a surfactant, and the balance water.
The invention breaks through the barrier of the prior art, and regulates the adsorption behavior of the surfactant on the surface of the silicon wafer by introducing the surfactant with specific quantity, specific molecular weight and specific hydrophilicity and hydrophobicity, so that the surfactant is only dynamically adsorbed on the pits on the surface of the silicon wafer, thereby improving the surface quality of the silicon wafer and improving the flatness of the surface of the silicon wafer on the premise of not influencing the polishing rate.
The advantages of the invention are further illustrated by the following more specific examples, but the scope of protection of the invention is not limited to the following examples only.
And (3) testing the conductivity of the silicon wafer by using a four-probe conductivity meter before and after polishing respectively so as to calculate the thickness of the silicon wafer, wherein the polishing rate of the silicon wafer is obtained by dividing the thickness difference of the silicon wafer before and after polishing by the polishing time. After polishing, the surface of the silicon wafer was scanned by an Atomic Force Microscope (AFM) to obtain a surface roughness value Ra.
Table 1 shows the components of the silicon wafer chemical mechanical polishing solution of the present invention, wherein the components are calculated according to the pure content and the formula given in the table, the balance is water, the components are uniformly mixed, and the pH value is adjusted to 10.8 by using a pH adjusting agent.
TABLE 1 ingredient tables of silicon wafer chemical mechanical polishing solutions of examples 1 to 11
In table 1, comparative example 1 is a sample of polishing slurry containing no surfactant; comparative example 2 is a polishing solution sample containing 600ppm tween 20; comparative example 3 is a polishing slurry sample containing 150ppm dodecylbenzene sulfonic acid; comparative example 4 is a polishing solution sample containing 150ppm of polyethylene glycol 10000; the silica in comparative example 5 was surface-modified with a commercially available silane coupling agent, KH-580, as described in WO2019/139828A 1; in comparative example 6, three surfactants were added, tween 20 (0.015%), dodecylbenzenesulfonic acid (0.015%), polyethylene glycol 10000 (0.015%).
In order to verify the using effect of the silicon wafer chemical mechanical polishing solution, comparative examples 1 to 6 and examples 1 to 11 of the invention were used for polishing experiments, and the polishing solution was diluted 20 times with deionized water. The specific polishing conditions were as follows: the polishing machine is 12' Reflexion LK, and the polishing pad is SUBA 800; polishing pressure was 2.0 psi; the rotating speed of the polishing head and the polishing disk is 93/87rpm, the flow rate of the polishing solution is 300mL/min, and the polishing time is 1 min.
Table 2 shows the polishing rates and the surface roughness of the polished silicon wafers of examples 1 to 11 and comparative examples 1 to 6 of the silicon wafer polishing solution of the present invention.
TABLE 2 polishing Rate and silicon wafer surface roughness for comparative examples 1 to 6 and examples 1 to 11
| Examples | Polishing Rate/(nm/min) | Surface roughness Ra/(nm) |
| Comparative example 1 | 620 | 0.44 |
| Comparative example 2 | 93 | 0.37 |
| Comparative example 3 | 118 | 0.45 |
| Comparative example 4 | 83 | 0.33 |
| Comparative example 5 | 402 | 0.48 |
| Comparative example 6 | 69 | 0.38 |
| Example 1 | 603 | 0.2 |
| Example 2 | 611 | 0.18 |
| Example 3 | 589 | 0.26 |
| Example 4 | 630 | 0.22 |
| Example 5 | 626 | 0.17 |
| Example 6 | 606 | 0.15 |
| Example 7 | 601 | 0.15 |
| Example 8 | 593 | 0.25 |
| Example 9 | 599 | 0.17 |
| Example 10 | 602 | 0.15 |
| Example 11 | 614 | 0.2 |
As can be seen from Table 2, by comparing the results of the experiments of comparative examples 1 and 3 and example 6, it can be seen that when the surfactant is added with a high hydrophobicity (HLB value of dodecylbenzene sulfonic acid is about 11), the surfactant is adsorbed on the surface of the silicon wafer to form a strong molecular film, and at a certain polishing pressure (2.0psi), the mechanical force cannot break the molecular film, and the protrusions/recesses on the surface of the silicon wafer are protected by the surfactant, thereby reducing the polishing rate. When tween 20 is added, due to strong hydrophilicity and relatively weak hydrophobicity, the surfactant can be adsorbed on the surface of the silicon wafer to form a weak molecular film, the molecular film at the convex part of the surface of the silicon wafer is damaged by mechanical force under a certain polishing pressure (2.0psi), and the molecular film at the concave part of the surface of the silicon wafer can form a protection effect due to small mechanical force, so that the tween 20 can not influence the polishing rate and reduce the roughness of the surface of the silicon wafer.
By comparing the experimental results of comparative examples 1 and 2 and example 6, it can be found that when the amount of tween 20 added is large, surfactant molecules are adsorbed on the surface of the silicon wafer in the form of a multi-layer molecular film, protecting the entire surface of the silicon wafer, resulting in a decrease in polishing rate; when a small amount of Tween 20 is added, the surfactant is not enough to form a multi-layer molecular film on the surface of the silicon wafer and is only dynamically adsorbed at pits on the surface, so that the roughness of the surface can be reduced on the premise of not influencing the polishing rate.
From the experimental results of comparative examples 1 and 4 and example 6, it was found that when the added surfactant has a large molecular weight, the surfactant is relatively adsorbed on the silicon wafer surface to form a strong molecular film, so that the polishing rate is lowered. From the experimental results of comparative examples 1 and 5, it is known that the polishing rate is reduced due to the reduction of the surface hardness of the abrasive after the surface modification of silica sol.
By comparing the experimental results of comparative examples 1 and 6 and example 6, it can be found that when a plurality of surfactants are added to the polishing solution, the surfactants compete for adsorption on the silicon wafer surface, the surfactant with stronger hydrophobicity and the surfactant with larger molecular weight preferentially adsorb on the silicon wafer surface, and a multi-layer surfactant molecular film is formed, thereby reducing the polishing rate.
In contrast, in examples 1 to 11, the adsorption behavior of the surfactant on the surface of the silicon wafer is regulated and controlled by introducing a specific amount of the surfactant with a specific molecular weight and a specific hydrophilicity and hydrophobicity, so that the surfactant is only dynamically adsorbed on the pits on the surface of the silicon wafer, and thus the surface quality of the silicon wafer is improved, the flatness of the surface of the silicon wafer is improved, and the effect is obvious on the premise of not affecting the polishing rate.
In conclusion, the invention achieves the purpose of improving the surface flatness of the silicon wafer on the premise of not influencing the polishing rate by introducing the surfactant. The use of the polishing solution can reduce the surface roughness of the silicon wafer by about 50 percent and improve the surface quality of the polished silicon wafer.
While the present invention has been described in detail with reference to the preferred embodiments, it should be understood that the above description should not be taken as limiting the invention. It will be appreciated by those skilled in the art that modifications or adaptations to the invention may be made in light of the teachings of the present specification. Such modifications or adaptations are intended to be within the scope of the present invention as defined in the claims.
Claims (11)
1. A silicon wafer chemical mechanical polishing solution suitable for polishing pressure not exceeding 2.0psi comprises 5-20% of silicon oxide abrasive, 0.2-12% of speed accelerator, 0.001-0.005% of surfactant and the balance of water by mass percent;
the surfactant is a nonionic surfactant with the molecular weight of less than or equal to 1000 and the HLB value of more than or equal to 16, and is selected from one or more of Tween 20, Tween 80, polyethylene glycol 200, polyethylene glycol 400, polyethylene glycol 600, polyethylene glycol 800 and polyethylene glycol 1000;
the speed accelerator is one or more selected from ethylenediamine, tetramethylammonium hydroxide, tetraethylammonium hydroxide, tetrapropylammonium hydroxide, piperazine, monoethanolamine, diethanolamine, triethanolamine or isopropanolamine.
2. The silicon wafer chemical mechanical polishing solution according to claim 1, comprising 10 to 20 mass% of a silicon oxide abrasive, 0.5 to 10 mass% of a rate accelerator, 0.001 to 0.003 mass% of a surfactant, and the balance being water.
3. The silicon wafer chemical mechanical polishing solution according to claim 1 or 2, wherein the silica abrasive is silica nanoparticles.
4. The chemical mechanical polishing solution for silicon wafers as set forth in claim 3, wherein the silica nanoparticles have a particle size of 30 to 120 nm.
5. The silicon wafer chemical mechanical polishing solution as set forth in claim 1, wherein the rate accelerator is piperazine.
6. The silicon wafer chemical mechanical polishing solution according to claim 1, wherein the surfactant is tween 20 or polyethylene glycol 400.
7. The silicon wafer chemical mechanical polishing solution according to claim 6, wherein the surfactant is Tween 20.
8. The silicon wafer chemical mechanical polishing solution according to claim 1 or 2, further comprising a pH adjusting agent.
9. The silicon wafer chemical mechanical polishing solution as set forth in claim 8, wherein the pH adjusting agent is selected from HNO3And any one of potassium hydroxide and ammonium hydroxide, and adjusting the pH value of the silicon wafer chemical mechanical polishing solution to 10.5-11.0。
10. The silicon wafer chemical mechanical polishing solution as set forth in claim 1 or 2, further comprising a bactericide, wherein the amount of the bactericide added is 0.04-0.2% by mass of the polishing solution.
11. Use of the silicon wafer chemical mechanical polishing solution according to any one of claims 1 to 10 in the chemical mechanical polishing of silicon wafers.
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| CN115851134A (en) * | 2022-10-27 | 2023-03-28 | 万华化学集团电子材料有限公司 | High-precision silicon wafer polishing composition and application thereof |
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