CN108400081A - The production method of silicon chip - Google Patents
The production method of silicon chip Download PDFInfo
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- CN108400081A CN108400081A CN201710068794.9A CN201710068794A CN108400081A CN 108400081 A CN108400081 A CN 108400081A CN 201710068794 A CN201710068794 A CN 201710068794A CN 108400081 A CN108400081 A CN 108400081A
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 264
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 264
- 239000010703 silicon Substances 0.000 title claims abstract description 263
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 45
- 241000817702 Acetabula Species 0.000 claims abstract description 48
- 239000000654 additive Substances 0.000 claims abstract description 5
- 230000000996 additive effect Effects 0.000 claims abstract description 5
- 230000000750 progressive effect Effects 0.000 claims abstract description 5
- 230000007306 turnover Effects 0.000 claims abstract description 5
- 238000000034 method Methods 0.000 claims description 59
- 230000008569 process Effects 0.000 claims description 34
- 238000005516 engineering process Methods 0.000 claims description 6
- 230000008859 change Effects 0.000 claims description 3
- 238000001039 wet etching Methods 0.000 claims description 3
- 238000007688 edging Methods 0.000 claims description 2
- 238000005520 cutting process Methods 0.000 abstract description 3
- 238000010586 diagram Methods 0.000 description 13
- 238000004140 cleaning Methods 0.000 description 6
- 239000000126 substance Substances 0.000 description 6
- 239000007788 liquid Substances 0.000 description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 5
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 4
- 230000005489 elastic deformation Effects 0.000 description 4
- 229910001868 water Inorganic materials 0.000 description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 229910052796 boron Inorganic materials 0.000 description 3
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 2
- 235000011114 ammonium hydroxide Nutrition 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000007517 polishing process Methods 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 230000008033 biological extinction Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910001651 emery Inorganic materials 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000004506 ultrasonic cleaning Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
- H01L21/02024—Mirror polishing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
The present invention provides a kind of production methods of silicon chip comprising following steps：One silicon chip is provided；The first face and the second face to silicon chip are carried out at the same time grinding, and the first face and the second face of silicon chip are respectively formed by the pattern of edge to center progressive additive；The silicon chip is adsorbed in an Acetabula device, the second face of the silicon chip is contacted with the Acetabula device, is ground to the first face of the silicon chip；By the silicon wafer turnover and it is adsorbed in the Acetabula device, the first face of the silicon chip is contacted with the Acetabula device, is ground to the second face of the silicon chip, is formed the silicon chip of bowl structure；Planarization is carried out at the same time to the first face and the second face of silicon chip；The epitaxial growth epitaxial layer on the first face or the second face of silicon chip.The problem of present invention solves traditional handicraft in grown above silicon epitaxial layer, obtained silicon chip intermediate projections or recess, while the corrugated nanotopography generated when cutting silicon chip is eliminated, and have preferably part and overall flat degree compared with the prior art.
Description
Technical field
The present invention relates to semiconductor process technique fields, and in particular to a kind of production method of silicon chip.
Background technology
Growth technology is developed in the beginning of the sixties at the end of the fifties, and industry is widely used in grown above silicon epitaxial layer at present
The mode of (i.e. new single-crystal layer).The new single-crystal layer of epitaxial growth can be in conduction type, resistivity etc. and silicon chip (i.e. monocrystalline silicon
Substrate) it is different, also, can by growth technology grown above silicon different-thickness and different requirements multilayer monocrystalline, from
And improve the performance of the flexibility and device of device design.
In grown above silicon epitaxial layer, since the lattice of epitaxial layer and silicon chip mismatches, lattice mismatch will produce.With normal
For the epitaxial layer for growing boron doped high resistivity in the monocrystalline substrate of boron doped low-resistivity seen, due to lattice
The length of covalent bond of mismatch and boron atom is shorter than the length of covalent bond of silicon atom, silicon chip can be caused to be formed gradual by edge to center
The pattern of protrusion.Certainly, in the epitaxial layer of other doping of epitaxial growth on silicon chip or different resistivity, silicon chip is in some cases
Also it will appear the pattern being gradually recessed by edge to center.If epitaxial wafer has protrusion or recess, may cannot be satisfied follow-up
Requirement of the technique to silicon wafer thickness homogeneity.
The patent document of Publication No. US7781313B2 provides a kind of method making silicon chip, as depicted in figs. 1 and 2,
It includes the following steps：
First, a silicon chip is provided；
Then, the silicon chip is adsorbed in an Acetabula device (not shown in figure 1), the second face B1 of the silicon chip with it is described
Acetabula device contacts；
Then, the first face A1 of the silicon chip is ground and is planarized, the first face A1 is made to ultimately form by edge
The recess pattern being gradually thinned to center thickness, as shown in Figure 1；
Then, by the silicon wafer turnover and it is adsorbed in the Acetabula device, the first face A1 and the sucker of the silicon chip
Device contacts, since the first face of silicon chip centers A1 are relatively thin, when being adsorbed in the Acetabula device, due to the work of pull of vacuum
With the edge of the silicon chip can be made to be contacted first with abrasive disk；
Then, the second face B1 of the silicon chip is ground and is planarized, due to the silicon chip edge first with grind
Mill contacts, so will can gradually be ground by edge to center when grinding；
Finally, the pull of vacuum of the Acetabula device is removed, the silicon chip can form a bowl shaped structure, as shown in Figure 2.
For that can be formed in epitaxial process for the epitaxial layer of protrusion, suitable growth in bowl shaped structure silicon chip the
On two face B1；For that can be formed for the epitaxial layer of recess in growth course, suitable growth in bowl shaped structure silicon chip first
On the A1 of face, in this way, can be obtained the satisfactory silicon chip of homogeneity.
However there are following two problems for the above method：
1. corrugated nanotopography problem, during being cut into silicon chip using multi-wire saw method, cutting line can be in silicon
Piece surface forms corrugated nanotopography, and when carrying out single side grinding using the above method, silicon chip can be adsorbed in an Acetabula device, by
In elastic deformation this corrugated nanotopography meeting temporary extinction, after grinding is completed to remove pull of vacuum, this corrugated nanometer shape
Looks will appear again.
2. the first face of pair silicon chip and the second face carry out single side flat one by one has flatness deficiency.
Invention content
Intermediate projections or recess pattern are formed to solve the silicon chip after outer layer growth, silicon chip homogeneity is caused not meet
It is required that the problem of, and corrugated nanotopography is eliminated, the present invention provides a kind of production methods of silicon chip.
The present invention provides a kind of production methods of silicon chip comprising following steps：
One silicon chip is provided；
The first face and the second face to the silicon chip are carried out at the same time grinding, and the first face and the second face of the silicon chip are respectively formed
By the pattern of edge to center progressive additive；
The silicon chip is adsorbed in an Acetabula device, the second face of the silicon chip is contacted with the Acetabula device, to described
First face of silicon chip is ground；
By the silicon wafer turnover and it is adsorbed in the Acetabula device, the first face and the Acetabula device of the silicon chip connect
It touches, the second face of the silicon chip is ground, the silicon chip of bowl structure is formed；
Planarization is carried out at the same time to the first face and the second face of the silicon chip；
The epitaxial growth epitaxial layer on the first face or the second face of the silicon chip.
Optionally, after being carried out at the same time planarization to the first face of the silicon chip and the second face, further include：
First face of the silicon chip is finally planarized, the epitaxial layer is epitaxially grown in the first face of the silicon chip
On.
Optionally, the central concave in the first face of the silicon chip, the central protuberance in the second face of the silicon chip, the extension
The pattern being gradually recessed by edge to center is formed when layer epitaxially grown.
Optionally, after being carried out at the same time planarization to the first face of the silicon chip and the second face, further include：
Second face of the silicon chip is finally planarized, the epitaxial layer is epitaxially grown in the second face of the silicon chip
On.
Optionally, the central concave in the first face of the silicon chip, the central protuberance in the second face of the silicon chip, the extension
It is formed when layer epitaxially grown by the pattern of the gradual protrusion in edge to center.
Optionally, in the step of being carried out at the same time grinding to the first face of the silicon chip and the second face, using abrasive wheel to institute
It states silicon chip and carries out physical grinding.
Optionally, the diameter of the abrasive wheel is more than or equal to the radius of the silicon chip.
Optionally, in the step of being carried out at the same time planarization to the first face of the silicon chip and the second face, using chemical machinery
Polishing process is carried out at the same time planarization to the first face of the silicon chip and the second face.
Optionally, further include a mill before or after being carried out at the same time grinding to the first face of the silicon chip and the second face
Side technique.
Optionally, further include one wet before or after being carried out at the same time grinding to the first face of the silicon chip and the second face
Method cleaning.
Optionally, further include a wet-etching technology after being ground to the second face of the silicon chip.
Optionally, further include that an edge is flat before being carried out at the same time planarization to the first face of the silicon chip and the second face
Chemical industry skill.
Optionally, further include a wet clean process after the edge flatening process.
Optionally, further include that an edge is flat after being carried out at the same time planarization to the first face of the silicon chip and the second face
Chemical industry skill.
Optionally, further include a wet clean process after the edge flatening process.
Optionally, further include a wet-cleaning after being carried out at the same time planarization to the first face of the silicon chip and the second face
Technique.
Optionally, further include a wet clean process after the final planarization.
It is eliminated in cutting silicon chip using the production method of silicon chip provided by the invention due to using double-side grinding technique
During form corrugated nanotopography, also, use two-sided flatening process, compared with the prior art in it is flat using single side
Smooth chemical industry skill has preferably part and overall flat degree.
Description of the drawings
Fig. 1 is the schematic diagram of the silicon chip after being planarized in the prior art to the first face of silicon chip；
Fig. 2 is the schematic diagram of the silicon chip of finally obtained bowl shaped structure in the prior art；
Fig. 3 is the flow chart of the production method for the silicon chip that the embodiment of the present invention one provides；
Fig. 4 be the embodiment of the present invention one provide silicon chip production method in, double-side grinding technique use silicon chip with hold
The schematic diagram of load plate, rotation motor and abrasive wheel；
Fig. 5 be the embodiment of the present invention one provide silicon chip production method in, before double-side grinding technique, silicon chip and abrasive wheel
Schematic diagram；
Fig. 6 be the embodiment of the present invention one provide silicon chip production method in, after double-side grinding technique, silicon chip and abrasive wheel
Schematic diagram；
Fig. 7 is in the production method for the silicon chip that the embodiment of the present invention one provides, and when the first face of grinding silicon chip, Acetabula device is also
The signal of silicon chip and swingle, abrasive wheel fixing device, abrasive wheel and Acetabula device when not to silicon chip applying vacuum suction
Figure；
Fig. 8 is in the production method for the silicon chip that the embodiment of the present invention one provides, when the first face of grinding silicon chip, Acetabula device pair
Silicon chip after silicon chip applying vacuum suction and swingle, the schematic diagram of abrasive wheel fixing device, abrasive wheel and Acetabula device；
Fig. 9 is behind the first face of grinding silicon chip, to remove sucker dress in the production method for the silicon chip that the embodiment of the present invention one provides
Silicon chip after the pull of vacuum set and swingle, the schematic diagram of abrasive wheel fixing device, abrasive wheel and Acetabula device；
Figure 10 is in the production method for the silicon chip that the embodiment of the present invention one provides, when the second face of grinding silicon chip, Acetabula device
Silicon chip when also not to silicon chip applying vacuum suction shows with swingle, abrasive wheel fixing device, abrasive wheel and Acetabula device
It is intended to；
Figure 11 is in the production method for the silicon chip that the embodiment of the present invention one provides, when the second face of grinding silicon chip, Acetabula device
To the silicon chip and swingle, the schematic diagram of abrasive wheel fixing device, abrasive wheel and Acetabula device after silicon chip applying vacuum suction；
Figure 12 be the embodiment of the present invention one provide silicon chip production method in, behind the second face of grinding silicon chip, bowl structure
Silicon chip and swingle, the schematic diagram of abrasive wheel fixing device, abrasive wheel and Acetabula device；
Figure 13 is the signal of the silicon chip after outer layer growth in the production method for the silicon chip that the embodiment of the present invention one provides
Figure；
Figure 14 is the signal of the silicon chip after outer layer growth in the production method of silicon chip provided by Embodiment 2 of the present invention
Figure；
The description of symbols of attached drawing 1- attached drawings 13 is as follows：
First face of A1, A2, A3- silicon chip；
Second face of B1, B2, B3- silicon chip；
Vertical range between d1- abrasive wheels and silicon chip edge；
Vertical range between d2- abrasive wheels and silicon chip center；
101- carriers；
102- rotation motors；
103,403- silicon chips；
104,105,203- abrasive wheels；
201- swingles；
202- abrasive wheel fixing devices；
204- Acetabula devices；
301,501- epitaxial layers.
Specific implementation mode
The production method of silicon chip proposed by the present invention is described in detail below in conjunction with the drawings and specific embodiments.According to following
Illustrate and claims, advantages and features of the invention will become apparent from.It should be noted that attached drawing is all made of very simplified shape
Formula and use non-accurate ratio, only for the purpose of facilitating and clarifying the purpose of the embodiments of the invention.
<Embodiment one>
The embodiment of the present invention one provides a kind of production method of silicon chip, as shown in figure 3, it includes the following steps：
S1, a silicon chip is provided；
S2, grinding is carried out at the same time to the first face of the silicon chip and the second face, the first face and the second face of the silicon chip are equal
Form the pattern by edge to center progressive additive；
S3, the silicon chip is adsorbed in an Acetabula device, the second face of the silicon chip is contacted with the Acetabula device, to institute
The first face for stating silicon chip is ground；
S4, by the silicon wafer turnover and it is adsorbed in the Acetabula device, the first face and the Acetabula device of the silicon chip
Contact, is ground the second face of the silicon chip, forms the silicon chip of bowl structure；
S5, planarization is carried out at the same time to the first face of the silicon chip and the second face；
S6, final flatening process processing is carried out to the second face of the silicon chip, the final flatening process is, for example,
CMP process；
S7, the epitaxial growth epitaxial layer on the second face of the silicon chip.
Below according to Fig. 4-Figure 14, the production method of above-mentioned silicon chip is described in further details.
As shown in figure 4, it is silicon chip 103 in double-side grinding technique and carrier 101, rotation motor 102, abrasive wheel 104
And the schematic diagram of abrasive wheel 105.In step s 2,103 edge of the silicon chip is held on carrier 101, rotation motor
102 are connect with the carrier 101 by gear, and the rotation motor 102 can drive 101 rotation of carrier (i.e. described when rotating
Carrier 101 is rotated around its axle center), to drive 103 rotation of the silicon chip, (it is also to surround to hold to be equivalent to silicon chip 103
The axle center of load plate is rotated).There are two abrasive wheels 104,105, the i.e. side of silicon chip 103 for the both sides setting of the silicon chip 103
It is provided with abrasive wheel 104, the other side is provided with abrasive wheel 105, and two abrasive wheels 104,105 are symmetrically distributed in the two of silicon chip 103
Side and high-speed rotation to the silicon chip 103 to carry out double-side grinding, and two abrasive wheels 104,105 are close to silicon chip surface when grinding.
As shown in figure 5, its schematic diagram for silicon chip 103 and abrasive wheel 104,105 in step S2 double-side grinding techniques.Such as figure
Shown in 5, the abrasive wheel 104,105 has an angle of inclination, the abrasive wheel 105 and the silicon chip 103 relative to silicon chip 103
Vertical range d1 between edge is less than the vertical range d2 between 103 center of the abrasive wheel 105 and the silicon chip, described to grind
Emery wheel 104 and 105 is symmetrically distributed in 103 both sides of silicon chip.Preferably, the diameter of the abrasive wheel 104,105 is all higher than or waits
In the radius silicon chip of the silicon chip 103, when can ensure double-side grinding in this way, it is ground to the whole region of the silicon chip 103, is had
Conducive to raising grinding effect.After double-side grinding technique, the silicon chip 103 is ultimately formed by the shape of edge to center progressive additive
Looks, as shown in Figure 6.Double-side grinding technique can not only make silicon chip 103 form the thin pattern of above-mentioned intermediate thick rim, also by the silicon
The corrugated nanotopography that piece 103 is formed during being cut into silicon chip 103 using multi-wire saw method eliminates.
As shown in fig. 7, its be silicon chip provided in an embodiment of the present invention production method in, step S3 grinding silicon chips 103
When the first face A2, Acetabula device 204 also not to 103 applying vacuum suction of silicon chip when silicon chip 103 and swingle 201, abrasive wheel
The schematic diagram of fixing device 202, abrasive wheel 203 and Acetabula device 204.Abrasive wheel 203 is installed on abrasive wheel fixing device 202
On, the abrasive wheel fixing device 202 is connected with swingle 201, and the silicon chip 103 is positioned on Acetabula device 204, the silicon
Second face B2 of piece is contacted with 204 part of the Acetabula device.The Acetabula device 204 does not also apply the silicon chip 103 at this time
It is still the pattern being gradually thinned with edge to center to add pull of vacuum, the silicon chip 103.
After 103 applying vacuum suction of silicon chip described in the Acetabula device 204, due to elastic deformation, the silicon chip 103
Second face B2 becomes flat surface, and is all contacted with the Acetabula device 204, and the silicon chip 103 is changed among the first face A2
The structure (thick middle thin edge) of protrusion, as shown in Figure 8.The rotation of swingle 201 at this time drives the abrasive wheel fixing device 202
Rotation, and then the abrasive wheel 203 is driven to rotate, you can the silicon chip 103 is ground, among the silicon chip 103
Protrusion, so mainly grinding middle section so that the center and peripheral area thickness of 103 pairs of silicon chip is essentially identical.Grinding is completed
Afterwards, abrasive wheel 203 to be risen, pull of vacuum of the Acetabula device 204 to silicon chip 103 is removed, elastic deformation occurs for the silicon chip 103,
Form bowl structure, the first face A2 intermediate recess, the second face B2 intermediate projections, as shown in Figure 9.
Refering to fig. 10, be silicon chip provided in an embodiment of the present invention production method in, when step S4 grinds the second face B2,
Acetabula device 204 also not to 103 applying vacuum suction of silicon chip when silicon chip 103 and swingle 201, abrasive wheel fixing device 202,
The schematic diagram of abrasive wheel 203 and Acetabula device 204.The silicon chip 103 is positioned on the Acetabula device 204, the silicon
First face A2 of piece is contacted with 204 part of the Acetabula device.At this point, the Acetabula device 204 is not also to the silicon chip at this time
103 applying vacuum suction, the silicon chip 103 still keep bowl structure, the second face B2 central protuberances, the first face A2 central foveas
It falls into.
After 103 applying vacuum suction of silicon chip described in the Acetabula device 204, due to elastic deformation, 103 meeting of the silicon chip
It flattens, as shown in figure 11.After the completion of grinding, the abrasive wheel 203 is risen, removes vacuum of the Acetabula device 204 to silicon chip 103
Suction, bowl structure before the silicon chip 103 restores, as shown in figure 12.103 thickness of the silicon chip is thinned at this time, and second
Face B2 is also more flat.
In the production method of silicon chip provided in this embodiment, step S5 uses two-sided flatening process, that is, i.e. to the silicon
First face A2 of piece 103 and the second face B2 of silicon chip 103 is carried out at the same time planarization, in the present embodiment, the referring to of planarization
Mechanical polishing process is learned, and identical with 103 process time of a batch of silicon chip.Certainly in practical applications, can also be used other
Flatening process, technological parameter also can suitably be adjusted with the requirement of different silicon chips 103.Compared with single side flat chemical industry skill, adopt
It will higher with the integral smoothness and partly flat degree of the silicon chip 103 of two-sided flatening process.
In the production method of silicon chip provided in this embodiment, the final flatening process of step S6, that is, subsequently outer to silicon chip
The one side of epitaxial growth epitaxial layer is once planarized again.In the present embodiment, the second face B2 of the silicon chip 103 is carried out flat
Change, forms the silicon chip 103 of final bowl structure.
Finally, it such as step S7, is grown on the second face B2 of the silicon chip 103 and specifies epitaxial layer 301, that is, complete silicon chip
It makes, as shown in figure 13.This epitaxial layer 301 can form the pattern being gradually recessed by edge to center in growth course, in addition
Prolong layer growth 301 when, due to lattice mismatch to 103 pattern of silicon chip generates influence just counteracting silicon chip 103 the second face B2 by
The pattern of the gradual protrusion in edge to center, so smooth, the satisfactory silicon chip of uniformity can be formed.
As a unrestricted example, between step S1 and step S2 or between step S2 and step S3, that is,
Before or after the double-side grinding technique, it can also increase by an edging technique, that is, carry out to the edge of the silicon chip 103
Grinding, by double-side grinding technique be difficult to the fringe region being ground to also grind it is smooth.
As a unrestricted example, between step S1 and step S2 or between step S2 and step S3, that is,
Before or after double-side grinding technique, it can also increase by a wet clean process, for example, by using deionized water, and can be with
Use ultrasonic cleaning mode.
As a unrestricted example, between step S4 and step S5, that is, after grinding the second face B2, also
It can increase by a wet-etching technology, preferably alkaline etch bath performs etching, and etching liquid is, for example, NaOH or KOH, for removing
Internal stress after grinding.
As a unrestricted example, between step S4 and step S5 or between step S5 and step S6, that is,
Before or after two-sided flatening process, it can also increase by an edge flatening process.After increasing edge flatening process,
It can also increase by a wet clean process after edge flatening process, this wet-cleaning preferably with having No. 1 liquid simultaneously
(NH4OH:H2O2:H2O), No. 2 liquid (HCL:H2O2:H2O can add appropriate hydrofluoric acid) the wet-cleaning machine of rinse bath carry out it is clear
It washes.
As a unrestricted example, between step S5 and step S6 or between step S6 and step S7, that is,
After the two-sided planarization or after final planarization, it can also increase by a wet clean process, this wet-cleaning is preferred
With simultaneously there is No. 1 liquid (NH4OH:H2O2:H2O), No. 2 liquid (HCL:H2O2:H2O can add appropriate hydrofluoric acid) rinse bath it is wet
Method cleaning machine is cleaned.
<Embodiment two>
The production method of silicon chip provided by Embodiment 2 of the present invention with embodiment one difference lies in give birth to by epitaxial layer 501
It is longer than the first face A2 of the silicon chip 403, as shown in figure 14.Its epitaxial layer 501 is that can be formed by edge to center in growth
The gradually material of protrusion pattern, when this epitaxial layer 501 is grown, the influence generated to 403 pattern of silicon chip due to lattice mismatch is just
The pattern that the first face A3 of silicon chip 403 is gradually recessed by edge to center is offset, is met so smooth, uniformity can be formed
It is required that silicon chip 403.Certainly in the final planarisation step before, and the first face A3 of silicon chip 403 is planarized.
In conclusion using the production method of silicon chip provided by the invention, due to using double-side grinding technique, eliminate
Cut silicon chip during formed corrugated nanotopography, also, use two-sided flatening process, compared with the prior art in adopt
There is preferably part and overall flat degree with single side flat chemical industry skill.
Foregoing description is only the description to present pre-ferred embodiments, not to any restriction of the scope of the invention, this hair
Any change, the modification that the those of ordinary skill in bright field does according to the disclosure above content, belong to the protection of claims
Range.
Claims (17)
1. a kind of production method of silicon chip, which is characterized in that include the following steps：
One silicon chip is provided；
The first face and the second face to the silicon chip are carried out at the same time grinding, and the first face and the second face of the silicon chip are respectively formed by side
Edge to center progressive additive pattern；
The silicon chip is adsorbed in an Acetabula device, the second face of the silicon chip is contacted with the Acetabula device, to the silicon chip
The first face be ground；
By the silicon wafer turnover and it is adsorbed in the Acetabula device, the first face of the silicon chip is contacted with the Acetabula device, right
Second face of the silicon chip is ground, and forms the silicon chip of bowl structure；
Planarization is carried out at the same time to the first face and the second face of the silicon chip；
The epitaxial growth epitaxial layer on the first face or the second face of the silicon chip.
2. the production method of silicon chip as described in claim 1, which is characterized in that the first face and the second face to the silicon chip are simultaneously
After being planarized, further include：
First face of the silicon chip is finally planarized, the epitaxial layer is epitaxially grown on the first face of the silicon chip.
3. the production method of silicon chip as claimed in claim 2, which is characterized in that the central concave in the first face of the silicon chip, institute
State the central protuberance in the second face of silicon chip, when extension layer epitaxially grown is formed by the pattern of the gradual protrusion in edge to center.
4. the production method of silicon chip as described in claim 1, which is characterized in that the first face and the second face to the silicon chip are simultaneously
After being planarized, further include：
Second face of the silicon chip is finally planarized, the epitaxial layer is epitaxially grown on the second face of the silicon chip.
5. the production method of silicon chip as claimed in claim 4, which is characterized in that the central concave in the first face of the silicon chip, institute
State the central protuberance in the second face of silicon chip, when extension layer epitaxially grown forms the pattern being gradually recessed by edge to center.
6. the production method of silicon chip as described in claim 1, which is characterized in that the first face and the second face to the silicon chip are simultaneously
In the step of being ground, physical grinding is carried out to the silicon chip using abrasive wheel.
7. the production method of silicon chip as claimed in claim 6, which is characterized in that the diameter of the abrasive wheel is more than or equal to institute
State the radius of silicon chip.
8. the production method of silicon chip as described in claim 1, which is characterized in that the first face and the second face to the silicon chip are simultaneously
In the step of being planarized, the first face of the silicon chip and the second face are carried out at the same time using CMP process flat
Change.
9. the production method of silicon chip as described in any one of claim 1~8, which is characterized in that the first of the silicon chip
Face and the second face are carried out at the same time before or after grinding, further include an edging technique.
10. the production method of silicon chip as described in any one of claim 1~8, which is characterized in that the first of the silicon chip
Face and the second face are carried out at the same time before or after grinding, further include a wet clean process.
11. the production method of silicon chip as described in any one of claim 1~8, which is characterized in that the second of the silicon chip
Further include a wet-etching technology after face is ground.
12. the production method of silicon chip as described in any one of claim 1~8, which is characterized in that the first of the silicon chip
Face and the second face are carried out at the same time before planarization, further include an edge flatening process.
13. the production method of silicon chip as claimed in claim 12, which is characterized in that after the edge flatening process, also
Including a wet clean process.
14. the production method of silicon chip as described in any one of claim 1~8, which is characterized in that the first of the silicon chip
Face and the second face are carried out at the same time after planarization, further include an edge flatening process.
15. the production method of silicon chip as claimed in claim 14, which is characterized in that after the edge flatening process, also
Including a wet clean process.
16. the production method of silicon chip as described in any one of claim 1~8, which is characterized in that the first of the silicon chip
Face and the second face are carried out at the same time after planarization, further include a wet clean process.
17. the production method of silicon chip as described in claim 2 or 4, which is characterized in that after the final planarization, also wrap
Include a wet clean process.
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| CN201710068794.9A CN108400081A (en) | 2017-02-08 | 2017-02-08 | The production method of silicon chip |
| TW106126976A TWI668738B (en) | 2017-02-08 | 2017-08-09 | A manufacturing method for wafers |
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| CN201710068794.9A CN108400081A (en) | 2017-02-08 | 2017-02-08 | The production method of silicon chip |
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| CN114700874A (en) * | 2022-04-24 | 2022-07-05 | 西安奕斯伟材料科技有限公司 | Single-face thinning system and single-face thinning method |
| CN114800104A (en) * | 2022-05-30 | 2022-07-29 | 西安奕斯伟材料科技有限公司 | Single-side thinning method and single-side thinning equipment |
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Also Published As
| Publication number | Publication date |
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| TW201837987A (en) | 2018-10-16 |
| TWI668738B (en) | 2019-08-11 |
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