TWI832487B - Single-sided thinning method and single-sided thinning equipment - Google Patents

Single-sided thinning method and single-sided thinning equipment Download PDF

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TWI832487B
TWI832487B TW111138775A TW111138775A TWI832487B TW I832487 B TWI832487 B TW I832487B TW 111138775 A TW111138775 A TW 111138775A TW 111138775 A TW111138775 A TW 111138775A TW I832487 B TWI832487 B TW I832487B
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grinding
silicon wafer
plane
thickness
required thickness
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TW202304648A (en
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賀雲鵬
王賀
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大陸商西安奕斯偉材料科技股份有限公司
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    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B7/00Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor
    • B24B7/20Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground
    • B24B7/22Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain
    • B24B7/228Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain for grinding thin, brittle parts, e.g. semiconductors, wafers
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B41/00Component parts such as frames, beds, carriages, headstocks
    • B24B41/007Weight compensation; Temperature compensation; Vibration damping
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B41/00Component parts such as frames, beds, carriages, headstocks
    • B24B41/06Work supports, e.g. adjustable steadies
    • B24B41/068Table-like supports for panels, sheets or the like
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002Preparing wafers
    • H01L21/02005Preparing bulk and homogeneous wafers
    • H01L21/02008Multistep processes
    • H01L21/0201Specific process step
    • H01L21/02013Grinding, lapping
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67092Apparatus for mechanical treatment
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02PCLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50Manufacturing or production processes characterised by the final manufactured product

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  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Ceramic Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)

Abstract

本發明有關一種用於控制矽片的形貌的單面減薄方法,包括:使矽片通過其第一表面貼附在第一加工台的承載平面上;基於矽片的中心位置需求厚度與邊緣位置需求厚度之差對第一加工台的承載平面相對於研磨裝置的研磨平面的傾角進行調整;通過研磨平面對矽片的與第一表面相反的第二表面進行研磨;對矽片進行翻面並使矽片通過其第二表面貼附在第二加工台的承載平面上;將第二加工台的承載平面相對於研磨平面的傾角調整至零;以及通過研磨平面對矽片的第一表面進行研磨。本發明還涉及一種用於控制矽片的形貌的單面減薄設備。通過該方法和設備,可以有效且穩定的實現對矽片的形貌的控制。The invention relates to a single-sided thinning method for controlling the morphology of a silicon wafer, which includes: attaching the silicon wafer to the bearing plane of the first processing table through its first surface; and based on the required thickness at the center of the silicon wafer and The difference in required thickness at the edge position adjusts the inclination angle of the bearing plane of the first processing table relative to the grinding plane of the grinding device; grinds the second surface of the silicon wafer opposite to the first surface through the grinding plane; turns the silicon wafer surface and attach the silicon wafer to the load-bearing plane of the second processing table through its second surface; adjust the inclination angle of the load-bearing plane of the second processing table relative to the grinding plane to zero; and align the first position of the silicon wafer through the grinding plane. The surface is ground. The invention also relates to a single-sided thinning equipment for controlling the morphology of silicon wafers. Through this method and equipment, the morphology of the silicon wafer can be controlled effectively and stably.

Description

單面減薄方法和單面減薄設備Single-sided thinning method and single-sided thinning equipment

本發明屬於矽片製造技術領域,具體地,是一種用於控制矽片的形貌的單面減薄方法和單面減薄設備。 The invention belongs to the technical field of silicon wafer manufacturing. Specifically, it is a single-sided thinning method and single-sided thinning equipment for controlling the morphology of silicon wafers.

單面減薄是指單獨對矽片的相反兩面進行研磨加工併產生具有高度平整表面的矽片。在該加工過程中,待加工矽片的非加工面被緊緊貼附在加工台的平面上,當加工時,加工台及砂輪會各自旋轉,然後砂輪通過向下進擊的方式對矽片進行厚度減薄,當完成第一面加工及清洗之後,矽片會被翻面,然後翻面後的矽片被送至加工台進行第二次加工,當第二次加工及清洗完成之後,即完成整個減薄作業。 Single-sided thinning refers to grinding the opposite sides of the silicon wafer separately and producing a silicon wafer with a highly flat surface. During this processing, the non-processed surface of the silicon wafer to be processed is tightly attached to the plane of the processing table. During processing, the processing table and the grinding wheel will rotate separately, and then the grinding wheel will attack the silicon wafer by downward attack. To reduce the thickness, after the first side processing and cleaning are completed, the silicon wafer will be turned over, and then the turned silicon wafer will be sent to the processing table for the second processing. When the second processing and cleaning are completed, that is Complete the entire thinning operation.

在整個減薄作業過程中,被加工的矽片只能維持線切後的形貌,在現行加工台平面與砂輪研磨平面平行的條件下,無法通過單面減薄來對矽片的形貌進行控制,使得當有特殊產品需要控制特別的形貌時無法符合對應的需求。 During the entire thinning operation, the processed silicon wafer can only maintain the shape after line cutting. Under the condition that the current processing table plane is parallel to the grinding wheel grinding plane, the shape of the silicon wafer cannot be modified by single-sided thinning. Control is carried out so that when there are special products that need to control special shapes, they cannot meet the corresponding requirements.

因此,需要提供一種能夠控制矽片的形貌特別是能夠滿足特殊形貌需求的單面減薄方法和設備。 Therefore, there is a need to provide a single-sided thinning method and equipment that can control the morphology of silicon wafers, especially those that can meet special morphology requirements.

本部分提供了本發明的總體概要,而不是對本發明的全部範圍或所有特徵的全面公開。 This section provides a general summary of the invention and is not a comprehensive disclosure of the full scope or all features of the invention.

本發明的一個目的在於提供一種能夠控制矽片的形貌特別是滿足特殊形貌需求的單面減薄方法。 One object of the present invention is to provide a single-sided thinning method that can control the morphology of silicon wafers, especially to meet special morphology requirements.

為了實現上述目的,提供了一種用於控制矽片的形貌的單面減薄方法,其可以包括:第一承載過程:使矽片通過其第一表面貼附在第一加工台的承載平面上;第一調整過程:基於矽片的中心位置需求厚度與邊緣位置需求厚度之差對第一加工台的承載平面相對於研磨裝置的研磨平面的傾角進行調整,其中,中心位置需求厚度和邊緣位置需求厚度分別為矽片在需要控制成的形貌下的中心位置厚度和邊緣位置厚度;第一研磨過程:通過研磨裝置的研磨平面對矽片的與第一表面相反的第二表面進行研磨;第二承載過程:對矽片進行翻面並使矽片通過其第二表面貼附在第二加工台的承載平面上;第二調整過程:將第二加工台的承載平面相對於研磨平面的傾角調整至零;以及第二研磨過程:通過研磨平面對矽片的第一表面進行研磨。 In order to achieve the above object, a single-sided thinning method for controlling the topography of a silicon wafer is provided, which may include: a first bearing process: attaching the silicon wafer to the bearing plane of the first processing platform through its first surface Above; the first adjustment process: adjusting the inclination angle of the bearing plane of the first processing table relative to the grinding plane of the grinding device based on the difference between the required thickness at the center position and the required thickness at the edge of the silicon wafer, where the required thickness at the center position and the required thickness at the edge The required position thicknesses are respectively the center position thickness and the edge position thickness of the silicon wafer under the shape that needs to be controlled; the first grinding process: grinding the second surface of the silicon wafer opposite to the first surface through the grinding plane of the grinding device ; The second load-bearing process: turning over the silicon wafer and attaching the silicon wafer to the load-bearing plane of the second processing table through its second surface; the second adjustment process: positioning the load-bearing plane of the second processing table relative to the grinding plane The inclination angle is adjusted to zero; and the second grinding process: grinding the first surface of the silicon wafer through the grinding plane.

在上述單面減薄方法中,還可以包括補償過程,在該補償過程中,中心位置需求厚度與邊緣位置需求厚度之差根據矽片在第一研磨過程之前的中心位置厚度與邊緣位置厚度之差被補償,以使第一加工台的承載平面相對於研磨平面的傾角的調整能夠基於補償過的中心位置需求厚度與邊緣位置需求厚度之差進行。 In the above single-sided thinning method, a compensation process may also be included. In the compensation process, the difference between the required thickness at the center position and the required thickness at the edge position is based on the difference between the thickness at the center position and the thickness at the edge position of the silicon wafer before the first grinding process. The difference is compensated so that the adjustment of the inclination angle of the bearing plane of the first processing table relative to the grinding plane can be performed based on the compensated difference between the required thickness at the center position and the required thickness at the edge position.

在上述單面減薄方法中,第一調整過程可以基於為中心位置需求厚度和邊緣位置需求厚度的兩個設定參數自動進行。 In the above single-sided thinning method, the first adjustment process can be automatically performed based on two set parameters for the required thickness at the center position and the required thickness at the edge position.

在上述單面減薄方法中,該補償過程可以通過以下方式自動進行:根據矽片在第一研磨過程之前的中心位置厚度和邊緣位置厚度對兩個設定參數進行補償,以使第一加工台的承載平面相對於研磨平面的傾角的調整能夠基於補償過的兩個設定參數自動進行。 In the above single-sided thinning method, the compensation process can be automatically performed in the following way: two set parameters are compensated according to the center position thickness and edge position thickness of the silicon wafer before the first grinding process, so that the first processing table The adjustment of the inclination angle of the load-bearing plane relative to the grinding plane can be performed automatically based on two compensated set parameters.

在上述單面減薄方法中,該補償過程可以包括判斷過程,在該判斷過程中,進行第一研磨過程的加工時間點被與設定兩個設定參數的設定時間點進行比較,在加工時間點早於設定時間點的情況下,不進行補償;以及在加工時間點晚於設定時間點的情況下,進行補償。 In the above single-sided thinning method, the compensation process may include a judgment process. In the judgment process, the processing time point at which the first grinding process is performed is compared with the set time point at which the two set parameters are set. At the processing time point If the processing time is earlier than the set time point, no compensation will be performed; and if the processing time point is later than the set time point, compensation will be performed.

在上述單面減薄方法中,第一加工台與第二加工台可以為同一加工台,並且第一加工台的承載平面與第二加工台的承載平面為同一承載平面。 In the above single-sided thinning method, the first processing platform and the second processing platform may be the same processing platform, and the bearing plane of the first processing platform and the bearing plane of the second processing platform are the same bearing plane.

在上述單面減薄方法中,第二調整過程可以基於兩個設定參數與第一調整過程對應的反向自動進行。 In the above single-sided thinning method, the second adjustment process can be automatically performed based on the reverse direction of the two set parameters corresponding to the first adjustment process.

本發明的另一目的在於提供一種能夠控制矽片的形貌特別是滿足特殊形貌需求的單面減薄設備。 Another object of the present invention is to provide a single-sided thinning equipment that can control the morphology of silicon wafers, especially to meet special morphology requirements.

為了實現上述目的,提供了一種用於控制矽片的形貌的單面減薄設備,其可以包括:第一加工台,其具有用於承載矽片的第一表面的第一承載平面;第二加工台,其具有用於承載矽片的與第一表面相反的第二表面的第二承載平面;貼附裝置,其用於使第一表面貼附在第一承載平面上以及使第二表面貼附在第二承載平面上;以及研磨裝置,其具有研磨平面並用於藉助於研磨平面對矽片的第二表面和第一表面進行研磨;其中,第一加工台構造成使得第一承載平面相對於研磨平面的傾角能夠調整到基於矽片的中心位置需求厚度與邊緣位置需求厚度之差確定的角度以用於矽片的第二表面的研磨,中心位置需求厚度和邊 緣位置需求厚度分別為矽片在需要控制成的形貌下的中心位置厚度和邊緣位置厚度;並且其中,第二加工台構造成使得第二承載平面相對於研磨平面平行以用於矽片的第一表面的研磨。 In order to achieve the above object, a single-sided thinning equipment for controlling the topography of silicon wafers is provided, which may include: a first processing table having a first bearing plane for bearing the first surface of the silicon wafer; Two processing stations, which have a second bearing plane for bearing the second surface of the silicon wafer opposite to the first surface; an attachment device, which is used to attach the first surface to the first bearing plane and make the second The surface is attached to the second bearing plane; and the grinding device has a grinding plane and is used to grind the second surface and the first surface of the silicon wafer by means of the grinding plane; wherein the first processing table is configured such that the first bearing The inclination angle of the plane relative to the grinding plane can be adjusted to an angle determined based on the difference between the required thickness at the center position and the required thickness at the edge of the silicon wafer for grinding the second surface of the silicon wafer. The required thickness at the center position and the edge position are required. The required thickness at the edge position is respectively the thickness at the center position and the thickness at the edge position of the silicon wafer under the morphology that needs to be controlled; and wherein the second processing station is configured such that the second bearing plane is parallel to the grinding plane for the purpose of processing the silicon wafer. Grinding of the first surface.

根據本發明,通過對加工台的承載平面相對於研磨裝置的研磨平面的傾角進行調整來控制加工台的傾角搭配,由此實現對所加工的矽片的特殊形貌的控制。通過這種方式,可以有效且穩定的對矽片的形貌進行控制,且在不變動原本的生產模式下進行。 According to the present invention, the inclination angle of the processing table is controlled by adjusting the inclination angle of the bearing plane of the processing table relative to the grinding plane of the grinding device, thereby achieving control of the special morphology of the silicon wafer being processed. In this way, the morphology of the silicon wafer can be effectively and stably controlled without changing the original production mode.

通過以下結合附圖對本發明的示例性實施方式的詳細說明,本發明的上述特徵和優點以及其他特徵和優點將更加清楚。 The above features and advantages and other features and advantages of the present invention will be more apparent from the following detailed description of exemplary embodiments of the present invention in conjunction with the accompanying drawings.

1:單面減薄設備 1: Single-sided thinning equipment

11:第一加工台 11:The first processing table

111:第一承載平面 111: First load-bearing plane

12:第二加工台 12: The second processing table

121:第二承載平面 121: Second load-bearing plane

13:研磨裝置 13:Grinding device

131:研磨平面 131: Grinding plane

100:矽片 100:Silicon chip

101:第一表面 101: First surface

102:第二表面 102: Second surface

201~206:矽片的形貌 201~206: Morphology of silicon wafer

D1:高度差 D1: height difference

D2:實際高度差 D2: Actual height difference

H:調整量 H:Adjustment amount

S:加工方向 S: Processing direction

S1:第一道加工 S1: First processing

S2:第二道加工 S2: Second processing

圖1示意性的示出了根據本發明的實施方式的單面減薄方法及相應的單面減薄設備;圖2用矽片的形貌變化示意性的示出了圖1的單面減薄設備的加工過程的順序步驟;圖3以框圖示意性的示出了手動平整度修整操作過程和自動平整度修整操作過程;圖4示意性的示出了加工台的傾角變化與矽片厚度及形貌的對應關係;以及圖5a至圖5e示意性的示出了根據本發明的實施方式的單面減薄方法中的加工台傾角的調整關係。 Figure 1 schematically shows a single-sided thinning method and corresponding single-sided thinning equipment according to an embodiment of the present invention; Figure 2 schematically shows the single-sided thinning method of Figure 1 using the morphological changes of the silicon wafer. The sequential steps of the processing process of thin equipment; Figure 3 schematically shows the manual flatness trimming operation process and the automatic flatness trimming operation process in a block diagram; Figure 4 schematically shows the inclination angle change of the processing table and the silicon The corresponding relationship between the sheet thickness and the topography; and Figures 5a to 5e schematically illustrate the adjustment relationship of the inclination angle of the processing table in the single-side thinning method according to the embodiment of the present invention.

下面參照附圖、藉助於示例性實施方式對本發明進行詳細描述。要注意的是,對本發明的以下詳細描述僅僅是出於說明目的,而絕不是對本發明的限制。此外,在各個附圖中採用相同的附圖示記來表示相同的部件。 The invention is described in detail below with the aid of exemplary embodiments with reference to the drawings. It should be noted that the following detailed description of the present invention is for illustrative purposes only and is in no way limiting of the present invention. In addition, the same reference numerals are used in the various drawings to represent the same components.

目前的單面減薄設備所使用的線切方式為線性加工,只能針對一維度的形貌進行控制,無法對一個維度以上的形貌或者說特殊形貌進行控制。在本發明中,加工台的承載平面相對於研磨裝置的研磨平面的傾角可以進行調整,從而通過控制加工台的傾角搭配來實現對所加工的矽片的特殊形貌的控制。 The current line cutting method used by single-sided thinning equipment is linear processing, which can only control the shape of one dimension, and cannot control the shape of more than one dimension or special shape. In the present invention, the inclination angle of the bearing plane of the processing table relative to the grinding plane of the grinding device can be adjusted, thereby controlling the special morphology of the silicon wafer being processed by controlling the inclination angle of the processing table.

如圖1中所示,根據本發明的實施方式,提出了一種用於控制矽片的形貌的單面減薄設備1,其可以包括第一加工台11、第二加工台12、貼附裝置(未示出)和研磨裝置13。具體說明如下。 As shown in Figure 1, according to an embodiment of the present invention, a single-sided thinning equipment 1 for controlling the topography of silicon wafers is proposed, which may include a first processing table 11, a second processing table 12, an attachment device (not shown) and grinding device 13. Specific instructions are as follows.

第一加工台11具有用於承載矽片100的第一表面101的第一承載平面111。也就是說,第一表面101此時作為非加工表面,並且矽片100的與第一表面101相反的第二表面102此時作為加工表面。 The first processing table 11 has a first supporting plane 111 for supporting the first surface 101 of the silicon wafer 100 . That is, the first surface 101 serves as a non-processed surface at this time, and the second surface 102 of the silicon chip 100 opposite to the first surface 101 serves as a processed surface at this time.

第二加工台12具有用於承載矽片100的第二表面102的第二承載平面121。也就是說,第二表面102此時作為非加工表面,並且第一表面101此時作為加工表面。 The second processing table 12 has a second supporting plane 121 for supporting the second surface 102 of the silicon wafer 100 . That is, the second surface 102 now serves as a non-machined surface, and the first surface 101 now serves as a machined surface.

貼附裝置用於使第一表面101貼附在第一承載平面111上以及使第二表面102貼附在第二承載平面121上。需要說明的是,例如對於第一表面101,這種貼附會在第一表面101被承載在第一承載平面111上時使矽片100發生彈性變形,導致其形貌具體為非加工表面的形貌順從第一承載平面111的形貌,從而與第一承載平面111的形貌相匹配或者說一致,即在此為平面。 The attachment device is used to attach the first surface 101 to the first bearing plane 111 and to attach the second surface 102 to the second bearing plane 121 . It should be noted that, for example, for the first surface 101, this attachment will cause the silicon chip 100 to elastically deform when the first surface 101 is carried on the first bearing plane 111, causing its shape to be specifically that of a non-processed surface. The shape complies with the topography of the first bearing plane 111, thereby matching or being consistent with the topography of the first bearing plane 111, that is, it is a plane here.

在本實施方式中,該貼附裝置可以通過吸附的方式來實現貼附。該貼附裝置例如可以設置在第一加工台11的第一承載平面111和第二加工台12的第二承載平面121中,以用於使矽片100的第一表面101和第二表面102以吸附的方式被分別貼附在第一承載平面111和第二承載平面121上。 In this embodiment, the attachment device can be attached by adsorption. For example, the attachment device can be disposed in the first bearing plane 111 of the first processing station 11 and the second bearing plane 121 of the second processing station 12 for attaching the first surface 101 and the second surface 102 of the silicon wafer 100 They are respectively attached to the first bearing plane 111 and the second bearing plane 121 in an adsorption manner.

可以設想的是,該貼附裝置還可以通過其他方式來實現貼附,例如矽片上下表面的壓力差等。 It is conceivable that the attachment device can also be attached through other means, such as the pressure difference between the upper and lower surfaces of the silicon chip.

研磨裝置13具有研磨平面131並用於藉助於研磨平面131沿著加工方向S對矽片100的第二表面102和第一表面101進行研磨。在本實施方式中,研磨裝置13可以是砂輪。此外,還可以設想其他類型的研磨裝置。 The grinding device 13 has a grinding plane 131 and is used to grind the second surface 102 and the first surface 101 of the silicon wafer 100 along the processing direction S by means of the grinding plane 131 . In this embodiment, the grinding device 13 may be a grinding wheel. Furthermore, other types of grinding devices are also conceivable.

在本發明的實施方式中,第一加工台11的傾角是可以調整的,例如可以通過繞其幾何中心轉動來調整其傾角,以使得第一加工台11的第一承載平面111相對於研磨裝置13的研磨平面131的傾角能夠被調整。第二加工台12的傾角可以是可調整的或者可以是固定的,只要能實現第二加工台12的第二承載平面121相對於研磨裝置13的研磨平面131平行即可。由此,通過控制加工台的傾角搭配來實現對所加工的矽片的特殊形貌的控制。 In the embodiment of the present invention, the inclination angle of the first processing table 11 is adjustable. For example, the inclination angle can be adjusted by rotating around its geometric center, so that the first bearing plane 111 of the first processing table 11 is relative to the grinding device. The inclination angle of the grinding plane 131 of 13 can be adjusted. The inclination angle of the second processing table 12 may be adjustable or fixed, as long as the second bearing plane 121 of the second processing table 12 is parallel to the grinding plane 131 of the grinding device 13 . As a result, the special morphology of the processed silicon wafers can be controlled by controlling the inclination angle of the processing table.

下面參照圖1和圖2,結合該單面減薄設備1來具體說明根據本發明的用於控制矽片的形貌的單面減薄方法。 1 and 2, the single-sided thinning method according to the present invention for controlling the morphology of the silicon wafer will be specifically described in conjunction with the single-sided thinning equipment 1.

該單面減薄方法可以依次包括第一承載過程、第一調整過程、第一研磨過程、第二承載過程、第二調整過程和第二研磨過程。具體說明如下。 The single-sided thinning method may sequentially include a first carrying process, a first adjusting process, a first grinding process, a second carrying process, a second adjusting process and a second grinding process. Specific instructions are as follows.

在第一承載過程中,使矽片100通過其非加工表面即第一表面101貼附在第一加工台11的承載平面即第一承載平面111上。可以理解的是,如上文所述,該貼附可以通過貼附裝置以吸附的方式來執行。 In the first loading process, the silicon wafer 100 is attached to the bearing plane 111 of the first processing platform 11 through its non-processing surface ie the first surface 101 . It can be understood that, as mentioned above, the attachment can be performed by adsorption by an attachment device.

圖2中以201示出了矽片100此時的形貌。 The morphology of the silicon chip 100 at this time is shown as 201 in FIG. 2 .

在第一調整過程中,基於矽片100的中心位置需求厚度C_THK與邊緣位置需求厚度E_THK之差對第一加工台11的第一承載平面111相對於研磨裝置13的研磨平面131的傾角進行調整,其中,中心位置需求厚度C_THK和邊緣位置需求厚度E_THK分別為矽片100在需要控制成的形貌下的中心位置厚度和邊緣位置厚度。 In the first adjustment process, the inclination angle of the first bearing plane 111 of the first processing table 11 relative to the grinding plane 131 of the grinding device 13 is adjusted based on the difference between the required thickness C_THK at the center of the silicon wafer 100 and the required thickness E_THK at the edge. , where the required thickness at the center position C_THK and the required thickness at the edge position E_THK are respectively the thickness at the center position and the thickness at the edge position of the silicon wafer 100 under the shape that needs to be controlled.

如圖1中所示,中心位置需求厚度C_THK與邊緣位置需求厚度E_THK之差即為高度差D1。圖1示出了該需要控制成的形貌為V形形貌。 As shown in Figure 1, the difference between the required thickness C_THK at the center position and the required thickness E_THK at the edge is the height difference D1. Figure 1 shows that the morphology that needs to be controlled is a V-shaped morphology.

在上述調整中,根據需要控制成的V形形貌,第一加工台11進行順時針轉動,使得第一加工台11的第一承載平面111相對於研磨裝置13的研磨平面131的傾角調整成使矽片100的加工表面即第二表面102的最邊緣部位能夠相比於中心部位被多研磨掉D1厚度。 In the above adjustment, according to the required V-shaped topography, the first processing table 11 rotates clockwise, so that the inclination angle of the first load-bearing plane 111 of the first processing table 11 relative to the grinding plane 131 of the grinding device 13 is adjusted to The processed surface of the silicon chip 100, that is, the outermost edge portion of the second surface 102 can be ground to a greater thickness D1 than the center portion.

在第一研磨過程中,通過研磨裝置13的研磨平面131對矽片100的加工表面即第二表面102進行研磨。由此,完成對矽片100的第一道加工S1。此時,如上所述,矽片100的第二表面102的最邊緣部位相比於中心部位被多研磨掉D1厚度。 In the first grinding process, the processed surface of the silicon wafer 100 , that is, the second surface 102 is ground through the grinding plane 131 of the grinding device 13 . Thus, the first processing S1 of the silicon wafer 100 is completed. At this time, as mentioned above, the outermost edge portion of the second surface 102 of the silicon chip 100 is ground to a thickness D1 greater than the central portion.

圖2中以202示出了完成第一道研磨加工之後的矽片100的形貌。 The morphology of the silicon wafer 100 after completing the first grinding process is shown as 202 in FIG. 2 .

在第二承載過程中,對矽片100進行翻面並使矽片100通過其此時的非加工表面即第二表面102貼附在第二加工台12的承載平面即第二承載平面121上。 During the second loading process, the silicon wafer 100 is turned over and the silicon wafer 100 is attached to the load-bearing plane 121 of the second processing platform 12 through its non-processing surface 102 at this time. .

可以設想的是,該翻面過程可以由翻面機構例如翻面機械臂來執行,並且如上所述,該貼附可以通過貼附裝置以吸附的方式來執行。 It is conceivable that the turning process can be performed by a turning mechanism such as a turning robot arm, and as mentioned above, the attachment can be performed in an adsorption manner by an attachment device.

圖2中以203示出了矽片100被翻面後的形貌,並且以204示出了矽片100被貼附在第二加工台12的第二承載平面121上時的形貌。 In FIG. 2 , 203 shows the topography of the silicon chip 100 after being turned over, and 204 shows the topography of the silicon chip 100 when it is attached to the second bearing plane 121 of the second processing platform 12 .

在第二調整過程中,將第二加工台12的第二承載平面121相對於研磨平面131的傾角調整至零。也就是說,使第二加工台12的第二承載平面121相對於研磨平面131平行。 In the second adjustment process, the inclination angle of the second bearing plane 121 of the second processing table 12 relative to the grinding plane 131 is adjusted to zero. That is to say, the second bearing plane 121 of the second processing table 12 is made parallel to the grinding plane 131 .

在第二研磨過程中,通過研磨平面131對矽片100的此時的加工表面即第一表面101進行研磨。由此,完成對矽片100的第二道加工S2。 In the second grinding process, the processed surface of the silicon chip 100 at this time, that is, the first surface 101 is ground through the grinding plane 131 . Thus, the second processing S2 of the silicon wafer 100 is completed.

圖2中以205示出了完成第二道研磨加工後但未從貼附中釋放的矽片100的形貌,並且以206示出了從貼附中釋放後的矽片100的形貌。 In FIG. 2 , 205 shows the morphology of the silicon wafer 100 after completing the second grinding process but not being released from the attachment, and 206 shows the morphology of the silicon wafer 100 after being released from the attachment.

通過上述方法,可以理解的是,在本發明的實施方式中,第一加工台11要構造成使得第一承載平面111相對於研磨平面131的傾角能夠調整到基於矽片100的中心位置需求厚度與邊緣位置需求厚度之差確定的角度以用於矽片100的第二表面102的研磨;並且第二加工台12要構造成使得第二承載平面121相對於研磨平面131平行以用於矽片100的第一表面101的研磨。通過這種方式,可以有效且穩定的對矽片的形貌進行控制,且在不變動原本的生產模式下進行。 Through the above method, it can be understood that in the embodiment of the present invention, the first processing table 11 is configured such that the inclination angle of the first bearing plane 111 relative to the grinding plane 131 can be adjusted to the required thickness based on the center position of the silicon wafer 100 The angle determined by the difference between the required thickness at the edge position is used for grinding the second surface 102 of the silicon wafer 100; and the second processing table 12 is configured such that the second bearing plane 121 is parallel to the grinding plane 131 for grinding the silicon wafer. Grinding of first surface 101 of 100 . In this way, the morphology of the silicon wafer can be effectively and stably controlled without changing the original production mode.

在本發明的實施方式中,該單面減薄方法還可以包括補償過程,在該補償過程中,中心位置需求厚度C_THK與邊緣位置需求厚度E_THK之差根據矽片100在第一研磨過程之前的中心位置厚度與邊緣位置厚度之差即實際高度差D2被補償,以使第一加工台11的第一承載平面111相對於研磨平面131的傾角的調整能夠基於補償過的中心位置需求厚度C_THK與邊緣位置需求厚度E_THK之差進行。 In an embodiment of the present invention, the single-sided thinning method may also include a compensation process. In the compensation process, the difference between the required thickness C_THK at the center position and the required thickness E_THK at the edge position is based on the thickness of the silicon wafer 100 before the first grinding process. The difference between the center position thickness and the edge position thickness, that is, the actual height difference D2, is compensated so that the adjustment of the inclination angle of the first bearing plane 111 of the first processing table 11 relative to the grinding plane 131 can be based on the compensated center position demand thickness C_THK and The edge position requires the difference in thickness E_THK.

具體來說,該補償過程涉及單面減薄加工前的矽片即在先前最後一筆矽片加工中獲得的矽片的平整度修整操作過程,如圖3中所示。在該平整度修整操作過程中,可以在先前最後一筆矽片加工中對矽片進行平坦度測量,當然,該平坦度測量例如也可以發生在單面減薄加工之前。通過該平坦度測量,可以獲得單面減薄加工之前或更準確的說第一研磨過程之前的矽片100的實際的中心位置厚度與邊緣位置厚度之差。 Specifically, the compensation process involves the flatness trimming operation process of the silicon wafer before single-sided thinning processing, that is, the silicon wafer obtained in the last silicon wafer processing, as shown in Figure 3. During the flatness trimming operation, the flatness measurement of the silicon wafer can be performed on the silicon wafer during the last previous silicon wafer processing. Of course, the flatness measurement can also occur before the single-sided thinning process, for example. Through this flatness measurement, the difference between the actual thickness at the center and the thickness at the edge of the silicon wafer 100 before the single-sided thinning process, or more accurately before the first grinding process, can be obtained.

為了獲得更準確的需要控制的矽片形貌,需要根據該實際的中心位置厚度與邊緣位置厚度之差對中心位置需求厚度與邊緣位置需求厚度之差進行補償。由此,第一加工台11的第一承載平面111相對於研磨平面131的傾角的調整基於補償過的中心位置需求厚度與邊緣位置需求厚度之差進行,從而消除了由單面減薄加工前的矽片本身的平坦度問題帶來的對需要控制的形貌的影響,使得最終獲得的矽片形貌更加準確。 In order to obtain a more accurate silicon wafer topography that needs to be controlled, the difference between the required thickness at the center and the required thickness at the edges needs to be compensated based on the actual difference between the thickness at the center and the thickness at the edges. Therefore, the adjustment of the inclination angle of the first bearing plane 111 of the first processing table 11 relative to the grinding plane 131 is based on the compensated difference between the required thickness at the center position and the required thickness at the edge position, thus eliminating the need for single-sided thinning before processing. The flatness of the silicon wafer itself affects the morphology that needs to be controlled, making the final morphology of the silicon wafer more accurate.

可以設想的是第一調整過程和補償過程可以手動進行。例如,單面減薄設備的操作員可以手動停止該設備或說機臺,並基於中心位置需求厚度與邊緣位置需求厚度之差或基於補償過的中心位置需求厚度與邊緣位置需求厚度之差手動調整該設備的參數,使得第一承載平面111相對於研磨平面131的傾角能夠調整到對應的傾角,之後,手動啟動該設備並重新開始加工。 It is conceivable that the first adjustment process and the compensation process can be performed manually. For example, the operator of a single-sided thinning machine can manually stop the machine or machine and manually stop the machine or machine based on the difference between the required thickness at the center and the required thickness at the edges or based on the compensated difference between the required thickness at the center and the required thickness at the edges. The parameters of the equipment are adjusted so that the inclination angle of the first bearing plane 111 relative to the grinding plane 131 can be adjusted to a corresponding inclination angle. After that, the equipment is manually started and processing is restarted.

可選的,第一調整過程可以根據為中心位置需求厚度C_THK和邊緣位置需求厚度E_THK的兩個設定參數自動進行。 Optionally, the first adjustment process can be automatically performed based on the two set parameters of the required thickness C_THK at the center position and the required thickness E_THK at the edge position.

中心位置需求厚度C_THK和邊緣位置需求厚度E_THK可以由高度差D1和最終矽片厚度需求THK例如根據下式:C_THK=THK-1/2×D1和E_THK=THK+1/2×D1來確定。 The required thickness C_THK at the center position and the required thickness E_THK at the edge position can be determined by the height difference D1 and the final silicon wafer thickness requirement THK, for example according to the following formulas: C_THK=THK-1/2×D1 and E_THK=THK+1/2×D1.

例如,可以在該單面減薄設備1的軟體部分中增加這兩個設定參數以及與其綁定結合的處理(Recipe)及補正功能。當進行至第一調整過程時,第一加工台11可以通過該處理及補正功能根據上述兩個設定參數進行調整例如旋轉,使得第一加工台11的第一承載平面111相對於研磨平面131達到對應的傾角。 For example, these two setting parameters and the processing (Recipe) and correction functions bound to them can be added to the software part of the single-sided thinning equipment 1 . When the first adjustment process is carried out, the first processing table 11 can be adjusted, for example rotated, according to the above two setting parameters through the processing and correction function, so that the first bearing plane 111 of the first processing table 11 reaches a height relative to the grinding plane 131 corresponding inclination angle.

可以想到的是,該補償過程也可以通過結合到上述調整中來自動進行。具體的,補償過程可以通過以下方式自動進行:根據矽片100在第一研磨過程之前的中心位置厚度和邊緣位置厚度對上述兩個設定參數進行補償,以使第一加工台11的第一承載平面111相對於研磨平面131的傾角的調整能夠基於補償過的這兩個設定參數自動進行。 It is conceivable that this compensation process can also be carried out automatically by being integrated into the adjustment described above. Specifically, the compensation process can be automatically performed in the following manner: the above two set parameters are compensated according to the center position thickness and edge position thickness of the silicon wafer 100 before the first grinding process, so that the first load bearing capacity of the first processing table 11 The adjustment of the inclination angle of the plane 111 relative to the grinding plane 131 can be automatically performed based on the two compensated set parameters.

可以設想的是,矽片100在第一研磨過程之前的中心位置厚度和邊緣位置厚度可以在先前最後一筆矽片加工中通過平坦度測量獲得並被自動回饋至處理及補正功能中的上述兩個設定參數以對其進行補償。當進入第一調整過程時,該單面減薄設備可以對處理及補正功能中的補償過的這兩個設定參數進行計算,以使第一加工台11對應計算出的數值進行調整,使得第一承載平面111相對於研磨平面131達到對應的傾角。 It is conceivable that the center position thickness and edge position thickness of the silicon wafer 100 before the first grinding process can be obtained by flatness measurement in the previous last step of silicon wafer processing and automatically fed back to the above two in the processing and correction functions. Set parameters to compensate for this. When entering the first adjustment process, the single-sided thinning equipment can calculate the two compensated setting parameters in the processing and correction functions, so that the first processing table 11 adjusts corresponding to the calculated values, so that the first A bearing plane 111 reaches a corresponding inclination angle relative to the grinding plane 131 .

如圖3中所示,該自動進行的補償過程包括判斷過程,在該判斷過程中,進行第一研磨過程的加工時間點被與設定兩個設定參數的設定時間點進行比較,在加工時間點早於設定時間點的情況下,不進行上述補償;以及在加工時間點晚於設定時間點的情況下,進行上述補償。 As shown in Figure 3, the automatically performed compensation process includes a judgment process in which the processing time point at which the first grinding process is performed is compared with the set time point at which the two set parameters are set. At the processing time point If the processing time is earlier than the set time point, the above compensation will not be performed; and if the processing time point is later than the set time point, the above compensation will be performed.

如上文所提到的,在不進行上述補償的情況下,設備會繼續進行加工操作;而在判斷進行上述補償的情況下,通過平坦度測量獲得的結果被自動 回饋至處理及補正功能中的上述兩個設定參數以使第一加工台11直接進行調整,並在此之後繼續進行加工操作。這種自動化過程無需手動停止設備,使得整個加工過程能夠連續進行,由此提升了生產效率,而且由於判斷過程是自動進行的,由此也節省了工作力。 As mentioned above, without the above compensation, the equipment will continue to process; and in the case where the above compensation is judged, the results obtained by the flatness measurement are automatically The above two setting parameters in the processing and correction functions are fed back to the first processing table 11 to directly adjust, and thereafter continue the processing operation. This automated process eliminates the need to manually stop the equipment, allowing the entire processing process to be carried out continuously, thereby improving production efficiency, and because the judgment process is performed automatically, it also saves work effort.

明顯的是,第一加工台11與第二加工台12可以為同一加工台,並且第一加工台11的第一承載平面111與第二加工台12的第二承載平面121可以為同一承載平面。 Obviously, the first processing platform 11 and the second processing platform 12 can be the same processing platform, and the first bearing plane 111 of the first processing platform 11 and the second bearing plane 121 of the second processing platform 12 can be the same bearing plane. .

根據上文提到的技術構思,該同一加工台可以構造成使得在對矽片100的第二表面102進行研磨時其承載平面相對於研磨平面131的傾角調整到基於矽片的中心位置需求厚度與邊緣位置需求厚度之差確定的角度;並在對矽片100的第一表面101進行研磨時其承載平面相對於研磨平面131的傾角調整至零。 According to the technical concept mentioned above, the same processing platform can be configured such that when grinding the second surface 102 of the silicon wafer 100, the inclination angle of its bearing plane relative to the grinding plane 131 is adjusted to the required thickness based on the center position of the silicon wafer. The angle determined by the difference from the required thickness at the edge position; and when grinding the first surface 101 of the silicon chip 100, the inclination angle of the bearing plane relative to the grinding plane 131 is adjusted to zero.

在這種情況下,除上文提到的可以自動進行的第一調整過程和補償過程外,第二調整過程也可以自動進行。可以設想的是,第二調整過程可以基於兩個設定參數與第一調整過程對應的反向自動進行。 In this case, in addition to the first adjustment process and the compensation process mentioned above that can be automatically performed, the second adjustment process can also be performed automatically. It is conceivable that the second adjustment process can be automatically performed based on the reverse direction of the two set parameters corresponding to the first adjustment process.

具體的,例如,當在第一調整過程中加工台基於高度差D1或補償過的高度差D1+D2自動順時針轉動時,則在第二調整過程中該加工台可以基於高度差D1或補償過的高度差D1+D2自動逆時針轉動,以使第二加工台12的第二承載平面121相對於研磨平面131的傾角調整返回至零。 Specifically, for example, when the processing table automatically rotates clockwise based on the height difference D1 or the compensated height difference D1+D2 during the first adjustment process, then the processing table can rotate clockwise based on the height difference D1 or the compensated height difference D1 during the second adjustment process. The height difference D1+D2 is automatically rotated counterclockwise, so that the inclination angle adjustment of the second bearing plane 121 of the second processing table 12 relative to the grinding plane 131 returns to zero.

因此,加工台在第一調整過程中的調整量可根據下式H=D2+D1對應獲得,而在第二調整過程中的調整量可根據下式H=-D2-D1對應獲得。可以 想到的是,當H的數值為正時,加工台進行逆時針轉動,而當H的數值為負時,加工台進行順時針轉動。 Therefore, the adjustment amount of the processing table in the first adjustment process can be obtained according to the following formula H=D2+D1, and the adjustment amount in the second adjustment process can be obtained according to the following formula H=-D2-D1. Can What comes to mind is that when the value of H is positive, the processing table rotates counterclockwise, and when the value of H is negative, the processing table rotates clockwise.

由此,可以僅使用單個加工台就實現對矽片的特殊形貌的控制並使整個單面減薄過程實現自動化。 As a result, it is possible to control the special morphology of the silicon wafer and automate the entire single-sided thinning process using only a single processing station.

參照圖4,示出了在本發明的實施方式中第一加工台的傾角變化與矽片厚度及形貌的對應關係。需要說明的是,圖4中所示的第一加工台的傾角是相對於水平方向而言的,也就是說,此時預設研磨裝置13的研磨平面131處於水平方向。 Referring to FIG. 4 , the corresponding relationship between the inclination angle change of the first processing table and the thickness and topography of the silicon wafer in the embodiment of the present invention is shown. It should be noted that the inclination angle of the first processing table shown in FIG. 4 is relative to the horizontal direction. That is to say, the grinding plane 131 of the preset grinding device 13 is in the horizontal direction at this time.

可以看到的是,在狀態(1)中,當第一加工台11處於水平方向時,所加工的矽片100具有平面形狀的形貌;在狀態(2)中,當第一加工台11的右端向下傾斜時,所加工的矽片100具有V形形貌;並且在狀態(3)中,當第一加工台11的右端向上傾斜時,所加工的矽片100具有倒V形形貌。 It can be seen that in state (1), when the first processing platform 11 is in the horizontal direction, the processed silicon wafer 100 has a planar shape; in state (2), when the first processing platform 11 When the right end of the first processing table 11 tilts downward, the processed silicon wafer 100 has a V-shaped topography; and in state (3), when the right end of the first processing table 11 tilts upward, the processed silicon wafer 100 has an inverted V-shaped topography. appearance.

下面參照圖5a至圖5e對加工台的調整關係進行更清楚的說明。 The adjustment relationship of the processing table will be explained more clearly below with reference to Figures 5a to 5e.

如圖5a所示,當矽片形貌最終需求為圖4中的狀態(1)即D1=0um並且最終矽片厚度需求為800um時,設定參數C_THK=800-0=800um並且E_THK=800+0=800um。如果先前最後一筆矽片加工的測量結果為C_THK=801um並且E_THK=800um,即D2=801-800=1um,則在第一調整過程中通過加工台調整量H=D2+D1=1+0=1um進行+1um傾角的自動或手動調整,然後在第二調整過程中通過加工台調整量H=-1-0=-1um進行-1um傾角的自動或手動調整。 As shown in Figure 5a, when the final requirement of the silicon wafer morphology is the state (1) in Figure 4, that is, D1=0um and the final silicon wafer thickness requirement is 800um, set the parameters C_THK=800-0=800um and E_THK=800+ 0=800um. If the previous measurement result of the last silicon wafer processing is C_THK=801um and E_THK=800um, that is, D2=801-800=1um, then in the first adjustment process, the adjustment amount H=D2+D1=1+0= through the processing table 1um performs automatic or manual adjustment of the +1um inclination angle, and then in the second adjustment process, uses the processing table adjustment amount H=-1-0=-1um to perform automatic or manual adjustment of the -1um inclination angle.

如圖5b所示,當矽片形貌最終需求為圖4中的狀態(2)例如D1=-5um並且最終矽片厚度需求為800um時,設定參數C_THK=800-(-5/2)=802.5um 並且E_THK=800+(-5/2)=797.5um。如果先前最後一筆矽片加工的測量結果為C_THK=801um並且E_THK=800um,即D2=801-800=1um,則在第一調整過程中通過加工台調整量H=D2+D1=1+(-5)=-4um進行-4um傾角的自動或手動調整,然後在第二調整過程中通過加工台調整量H=-1-(-5)=4um進行+4um傾角的自動或手動調整。 As shown in Figure 5b, when the final requirement of the silicon wafer morphology is the state (2) in Figure 4, for example, D1=-5um and the final silicon wafer thickness requirement is 800um, set the parameter C_THK=800-(-5/2)= 802.5um And E_THK=800+(-5/2)=797.5um. If the previous measurement result of the last silicon wafer processing is C_THK=801um and E_THK=800um, that is, D2=801-800=1um, then in the first adjustment process, the adjustment amount H=D2+D1=1+(- 5)=-4um for automatic or manual adjustment of -4um inclination, and then in the second adjustment process, automatic or manual adjustment of +4um inclination is performed through the processing table adjustment amount H=-1-(-5)=4um.

如圖5c所示,當矽片形貌最終需求為圖4中的狀態(2)例如D1=-5um並且最終矽片厚度需求為800um時,設定參數C_THK=800-(-5/2)=802.5um並且E_THK=800+(-5/2)=797.5um。如果先前最後一筆矽片加工的測量結果為C_THK=800um並且E_THK=801um,即D2=800-801=-1um,則在第一調整過程中通過加工台調整量H=D2+D1=-1+(-5)=-6um進行-6um傾角的自動或手動調整,然後在第二調整過程中通過加工台調整量H=-(-1)-(-5)=6um進行+6um傾角的自動或手動調整。 As shown in Figure 5c, when the final requirement of the silicon wafer morphology is the state (2) in Figure 4, such as D1=-5um and the final silicon wafer thickness requirement is 800um, set the parameter C_THK=800-(-5/2)= 802.5um and E_THK=800+(-5/2)=797.5um. If the previous measurement result of the last silicon wafer processing is C_THK=800um and E_THK=801um, that is, D2=800-801=-1um, then in the first adjustment process, the adjustment amount H=D2+D1=-1+ is passed through the processing table (-5)=-6um performs automatic or manual adjustment of the -6um inclination angle, and then in the second adjustment process, uses the processing table adjustment amount H=-(-1)-(-5)=6um to perform automatic or manual adjustment of the +6um inclination angle. Manual adjustment.

如圖5d所示,當矽片形貌最終需求為圖4中的狀態(3)例如D1=+5um並且最終矽片厚度需求為800um時,設定參數C_THK=800-(5/2)=797.5um並且E_THK=800+(5/2)=802.5um。如果先前最後一筆矽片加工的測量結果為C_THK=801um並且E_THK=800um,即D2=801-800=1um,則在第一調整過程中通過加工台調整量H=D2+D1=1+5=6um進行+6um傾角的自動或手動調整,然後在第二調整過程中通過加工台調整量H=-1-5=-6um進行-6um傾角的自動或手動調整。 As shown in Figure 5d, when the final requirement of the silicon wafer morphology is the state (3) in Figure 4, such as D1=+5um and the final silicon wafer thickness requirement is 800um, set the parameter C_THK=800-(5/2)=797.5 um and E_THK=800+(5/2)=802.5um. If the previous measurement result of the last silicon wafer processing is C_THK=801um and E_THK=800um, that is, D2=801-800=1um, then in the first adjustment process, the adjustment amount H=D2+D1=1+5= through the processing table 6um performs automatic or manual adjustment of the +6um inclination angle, and then in the second adjustment process, uses the processing table adjustment amount H=-1-5=-6um to perform automatic or manual adjustment of the -6um inclination angle.

如圖5e所示,當矽片形貌最終需求為圖4中的狀態(3)例如D1=+5um並且最終矽片厚度需求為800um時,設定參數C_THK=800-(5/2)=797.5um並且E_THK=800+(5/2)=802.5um。如果先前最後一筆矽片加工的測 量結果為C_THK=800um並且E_THK=801um,即D2=800-801=-1um,則在第一調整過程中通過加工台調整量H=D2+D1=-1+5=4um進行+4um傾角的自動或手動調整,然後在第二調整過程中通過加工台調整量H=-(-1)-5=-4um進行-4um傾角的自動或手動調整。 As shown in Figure 5e, when the final requirement of the silicon wafer morphology is the state (3) in Figure 4, such as D1=+5um and the final silicon wafer thickness requirement is 800um, set the parameter C_THK=800-(5/2)=797.5 um and E_THK=800+(5/2)=802.5um. If the last measurement of silicon wafer processing was The measurement results are C_THK=800um and E_THK=801um, that is, D2=800-801=-1um. In the first adjustment process, the +4um inclination angle is adjusted by adjusting the processing table H=D2+D1=-1+5=4um. Automatic or manual adjustment, and then in the second adjustment process, the -4um inclination angle is automatically or manually adjusted through the processing table adjustment amount H=-(-1)-5=-4um.

以上所述,僅為本發明的具體實施方式,但本發明的保護範圍並不局限於此,任何熟悉本技術領域的技術人員在本發明揭露的技術範圍內,可輕易想到的變化或替換,都應涵蓋在本發明的保護範圍之內。因此,本發明的保護範圍應以所述申請專利範圍的保護範圍為準。 The above are only specific embodiments of the present invention, but the protection scope of the present invention is not limited thereto. Any person familiar with the technical field can easily think of changes or substitutions within the technical scope disclosed in the present invention. All are covered by the protection scope of the present invention. Therefore, the protection scope of the present invention should be subject to the protection scope of the patent application.

1:單面減薄設備 1: Single-sided thinning equipment

11:第一加工台 11:The first processing table

111:第一承載平面 111: First load-bearing plane

12:第二加工台 12: The second processing table

121:第二承載平面 121: Second load-bearing plane

13:研磨裝置 13:Grinding device

131:研磨平面 131: Grinding plane

100:矽片 100:Silicon chip

101:第一表面 101: First surface

102:第二表面 102: Second surface

D1:高度差 D1: height difference

H:調整量 H:Adjustment amount

S:加工方向 S: Processing direction

S1:第一道加工 S1: First processing

S2:第二道加工 S2: Second processing

Claims (6)

一種用於控制矽片的形貌的單面減薄方法,包括:第一承載過程:使矽片通過其第一表面貼附在第一加工台的承載平面上;第一調整過程:基於該矽片的中心位置需求厚度與邊緣位置需求厚度之差對該第一加工台的承載平面相對於研磨裝置的研磨平面的傾角進行調整,其中,該中心位置需求厚度和該邊緣位置需求厚度分別為該矽片在需要控制成的形貌下的中心位置厚度和邊緣位置厚度;第一研磨過程:通過該研磨裝置的該研磨平面對該矽片的與該第一表面相反的第二表面進行研磨;第二承載過程:對該矽片進行翻面並使該矽片通過其第二表面貼附在第二加工台的承載平面上;第二調整過程:將該第二加工台的承載平面相對於該研磨平面的傾角調整至零;第二研磨過程:通過該研磨平面對該矽片的該第一表面進行研磨;以及補償過程:在該補償過程中,該中心位置需求厚度與該邊緣位置需求厚度之差根據該矽片在該第一研磨過程之前的中心位置厚度與邊緣位置厚度之差被補償,以使該第一加工台的承載平面相對於該研磨平面的傾角的調整能夠基於補償過的該中心位置需求厚度與該邊緣位置需求厚度之差進行;其中該第一調整過程能夠根據為該中心位置需求厚度和該邊緣位置需求厚度的兩個設定參數自動進行; 該中心位置需求厚度C_THK和該邊緣位置需求厚度E_THK可以由高度差D1和最終矽片厚度需求THK例如根據下式:C_THK=THK-1/2×D1和E_THK=THK+1/2×D1來確定。 A single-sided thinning method for controlling the morphology of silicon wafers, including: a first load-bearing process: attaching the silicon wafer to the load-bearing plane of the first processing table through its first surface; a first adjustment process: based on the The difference between the required thickness at the center position and the required thickness at the edge position of the silicon wafer adjusts the inclination angle of the bearing plane of the first processing table relative to the grinding plane of the grinding device, where the required thickness at the center position and the required thickness at the edge position are respectively The thickness of the center position and the thickness of the edge position of the silicon wafer under the required morphology; the first grinding process: grinding the second surface of the silicon wafer opposite to the first surface through the grinding plane of the grinding device ; The second load-bearing process: turn over the silicon wafer and attach the silicon wafer to the load-bearing plane of the second processing table through its second surface; the second adjustment process: turn the load-bearing plane of the second processing table relative to The inclination angle of the grinding plane is adjusted to zero; the second grinding process: grinding the first surface of the silicon wafer through the grinding plane; and the compensation process: in the compensation process, the required thickness at the center position and the edge position The difference in required thickness is compensated based on the difference between the thickness at the center and the thickness at the edge of the silicon wafer before the first grinding process, so that the adjustment of the inclination angle of the bearing plane of the first processing table relative to the grinding plane can be based on compensation. The difference between the required thickness at the center position and the required thickness at the edge position is determined; wherein the first adjustment process can be automatically performed based on the two setting parameters of the required thickness at the center position and the required thickness at the edge position; The required thickness C_THK at the center position and the required thickness E_THK at the edge position can be determined by the height difference D1 and the final silicon wafer thickness requirement THK. For example, according to the following formulas: C_THK=THK-1/2×D1 and E_THK=THK+1/2×D1. determine. 如請求項2所述的單面減薄方法,其中該補償過程能夠通過以下方式自動進行:根據該矽片在該第一研磨過程之前的中心位置厚度和邊緣位置厚度對該兩個設定參數進行補償,以使該第一加工台的承載平面相對於該研磨平面的傾角的該調整能夠基於補償過的該兩個設定參數自動進行。 The single-sided thinning method as described in claim 2, wherein the compensation process can be automatically performed in the following manner: performing the two set parameters according to the center position thickness and edge position thickness of the silicon wafer before the first grinding process. Compensation is performed so that the adjustment of the inclination angle of the bearing plane of the first processing table relative to the grinding plane can be automatically performed based on the two compensated setting parameters. 如請求項2所述的單面減薄方法,其中該補償過程包括判斷過程,在該判斷過程中,進行該第一研磨過程的加工時間點被與設定該兩個設定參數的設定時間點進行比較,在該加工時間點早於該設定時間點的情況下,不進行該補償;以及在該加工時間點晚於該設定時間點的情況下,進行該補償。 The single-sided thinning method according to claim 2, wherein the compensation process includes a judgment process, in which the processing time point of performing the first grinding process is compared with the setting time point of setting the two setting parameters. In comparison, if the processing time point is earlier than the set time point, the compensation is not performed; and if the processing time point is later than the set time point, the compensation is performed. 如請求項1至3中任一項所述的單面減薄方法,其中該第一加工台與該第二加工台為同一加工台,並且該第一加工台的承載平面與該第二加工台的承載平面為同一承載平面。 The single-sided thinning method according to any one of claims 1 to 3, wherein the first processing platform and the second processing platform are the same processing platform, and the load-bearing plane of the first processing platform is in contact with the second processing platform. The bearing plane of the platform is the same bearing plane. 如請求項4所述的單面減薄方法,其中該第二調整過程能夠基於該兩個設定參數與該第一調整過程對應的反向自動進行。 The single-sided thinning method according to claim 4, wherein the second adjustment process can be automatically performed based on the reverse direction of the two setting parameters and the first adjustment process. 一種用於控制矽片的形貌的單面減薄設備,包括:第一加工台,其具有用於承載矽片的第一表面的第一承載平面;第二加工台,其具有用於承載該矽片的與該第一表面相反的第二表面的第二承載平面;貼附裝置,其用於使該第一表面貼附在該第一承載平面上以及使該第二表面貼附在該第二承載平面上;以及 研磨裝置,其具有研磨平面並用於藉助於該研磨平面對該矽片的該第二表面和該第一表面進行研磨;其中,該第一加工台構造成使得該第一承載平面相對於該研磨平面的傾角能夠調整到基於該矽片的中心位置需求厚度與邊緣位置需求厚度之差確定的角度以用於該矽片的該第二表面的研磨,該中心位置需求厚度和該邊緣位置需求厚度分別為該矽片在需要控制成的形貌下的中心位置厚度和邊緣位置厚度;該中心位置需求厚度與該邊緣位置需求厚度之差根據該矽片在該第一研磨過程之前的中心位置厚度與邊緣位置厚度之差被補償,以使該第一加工台的承載平面相對於該研磨平面的傾角的調整能夠基於補償過的該中心位置需求厚度與該邊緣位置需求厚度之差進行;其中該第一調整過程能夠根據為該中心位置需求厚度和該邊緣位置需求厚度的兩個設定參數自動進行;該中心位置需求厚度C_THK和該邊緣位置需求厚度E_THK可以由高度差D1和最終矽片厚度需求THK例如根據下式:C_THK=THK-1/2×D1和E_THK=THK+1/2×D1來確定;並且其中,該第二加工台構造成使得該第二承載平面相對於該研磨平面平行以用於該矽片的該第一表面的研磨。 A single-sided thinning equipment for controlling the morphology of silicon wafers, including: a first processing platform having a first bearing plane for bearing the first surface of the silicon wafer; a second processing platform having a bearing for bearing the first surface of the silicon wafer; A second bearing plane of the second surface of the silicon chip opposite to the first surface; an attachment device for attaching the first surface to the first bearing plane and attaching the second surface to on the second load-bearing plane; and A grinding device having a grinding plane and used for grinding the second surface and the first surface of the silicon wafer by means of the grinding plane; wherein the first processing table is configured such that the first bearing plane is relative to the grinding plane The inclination angle of the plane can be adjusted to an angle determined based on the difference between the required thickness at the center of the silicon wafer and the required thickness at the edge for grinding the second surface of the silicon wafer, the required thickness at the center and the required thickness at the edge. The thickness at the center position and the thickness at the edge position of the silicon wafer under the required morphology to be controlled are respectively; the difference between the required thickness at the center position and the required thickness at the edge position is based on the thickness at the center position of the silicon wafer before the first grinding process. The difference between the thickness at the edge position and the thickness at the edge position is compensated so that the adjustment of the inclination angle of the bearing plane of the first processing table relative to the grinding plane can be performed based on the compensated difference between the required thickness at the center position and the required thickness at the edge position; wherein the The first adjustment process can be automatically performed based on the two set parameters of the required thickness at the center position and the required thickness at the edge position; the required thickness at the center position C_THK and the required thickness at the edge position E_THK can be determined by the height difference D1 and the final silicon wafer thickness requirement. THK is determined, for example, according to the following formulas: C_THK=THK-1/2×D1 and E_THK=THK+1/2×D1; and wherein the second processing table is configured such that the second bearing plane is parallel to the grinding plane For grinding the first surface of the silicon wafer.
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US20170095902A1 (en) * 2015-10-06 2017-04-06 Disco Corporation Grinding method
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