TWI832487B - Single-sided thinning method and single-sided thinning equipment - Google Patents

Abstract

The invention relates to a single-sided thinning method for controlling the morphology of a silicon wafer, which includes: attaching the silicon wafer to the bearing plane of the first processing table through its first surface; and based on the required thickness at the center of the silicon wafer and The difference in required thickness at the edge position adjusts the inclination angle of the bearing plane of the first processing table relative to the grinding plane of the grinding device; grinds the second surface of the silicon wafer opposite to the first surface through the grinding plane; turns the silicon wafer surface and attach the silicon wafer to the load-bearing plane of the second processing table through its second surface; adjust the inclination angle of the load-bearing plane of the second processing table relative to the grinding plane to zero; and align the first position of the silicon wafer through the grinding plane. The surface is ground. The invention also relates to a single-sided thinning equipment for controlling the morphology of silicon wafers. Through this method and equipment, the morphology of the silicon wafer can be controlled effectively and stably.

Description

Single-sided thinning method and single-sided thinning equipment

The invention belongs to the technical field of silicon wafer manufacturing. Specifically, it is a single-sided thinning method and single-sided thinning equipment for controlling the morphology of silicon wafers.

Single-sided thinning refers to grinding the opposite sides of the silicon wafer separately and producing a silicon wafer with a highly flat surface. During this processing, the non-processed surface of the silicon wafer to be processed is tightly attached to the plane of the processing table. During processing, the processing table and the grinding wheel will rotate separately, and then the grinding wheel will attack the silicon wafer by downward attack. To reduce the thickness, after the first side processing and cleaning are completed, the silicon wafer will be turned over, and then the turned silicon wafer will be sent to the processing table for the second processing. When the second processing and cleaning are completed, that is Complete the entire thinning operation.

During the entire thinning operation, the processed silicon wafer can only maintain the shape after line cutting. Under the condition that the current processing table plane is parallel to the grinding wheel grinding plane, the shape of the silicon wafer cannot be modified by single-sided thinning. Control is carried out so that when there are special products that need to control special shapes, they cannot meet the corresponding requirements.

Therefore, there is a need to provide a single-sided thinning method and equipment that can control the morphology of silicon wafers, especially those that can meet special morphology requirements.

This section provides a general summary of the invention and is not a comprehensive disclosure of the full scope or all features of the invention.

One object of the present invention is to provide a single-sided thinning method that can control the morphology of silicon wafers, especially to meet special morphology requirements.

In order to achieve the above object, a single-sided thinning method for controlling the topography of a silicon wafer is provided, which may include: a first bearing process: attaching the silicon wafer to the bearing plane of the first processing platform through its first surface Above; the first adjustment process: adjusting the inclination angle of the bearing plane of the first processing table relative to the grinding plane of the grinding device based on the difference between the required thickness at the center position and the required thickness at the edge of the silicon wafer, where the required thickness at the center position and the required thickness at the edge The required position thicknesses are respectively the center position thickness and the edge position thickness of the silicon wafer under the shape that needs to be controlled; the first grinding process: grinding the second surface of the silicon wafer opposite to the first surface through the grinding plane of the grinding device ; The second load-bearing process: turning over the silicon wafer and attaching the silicon wafer to the load-bearing plane of the second processing table through its second surface; the second adjustment process: positioning the load-bearing plane of the second processing table relative to the grinding plane The inclination angle is adjusted to zero; and the second grinding process: grinding the first surface of the silicon wafer through the grinding plane.

In the above single-sided thinning method, a compensation process may also be included. In the compensation process, the difference between the required thickness at the center position and the required thickness at the edge position is based on the difference between the thickness at the center position and the thickness at the edge position of the silicon wafer before the first grinding process. The difference is compensated so that the adjustment of the inclination angle of the bearing plane of the first processing table relative to the grinding plane can be performed based on the compensated difference between the required thickness at the center position and the required thickness at the edge position.

In the above single-sided thinning method, the first adjustment process can be automatically performed based on two set parameters for the required thickness at the center position and the required thickness at the edge position.

In the above single-sided thinning method, the compensation process can be automatically performed in the following way: two set parameters are compensated according to the center position thickness and edge position thickness of the silicon wafer before the first grinding process, so that the first processing table The adjustment of the inclination angle of the load-bearing plane relative to the grinding plane can be performed automatically based on two compensated set parameters.

In the above single-sided thinning method, the compensation process may include a judgment process. In the judgment process, the processing time point at which the first grinding process is performed is compared with the set time point at which the two set parameters are set. At the processing time point If the processing time is earlier than the set time point, no compensation will be performed; and if the processing time point is later than the set time point, compensation will be performed.

In the above single-sided thinning method, the first processing platform and the second processing platform may be the same processing platform, and the bearing plane of the first processing platform and the bearing plane of the second processing platform are the same bearing plane.

In the above single-sided thinning method, the second adjustment process can be automatically performed based on the reverse direction of the two set parameters corresponding to the first adjustment process.

Another object of the present invention is to provide a single-sided thinning equipment that can control the morphology of silicon wafers, especially to meet special morphology requirements.

In order to achieve the above object, a single-sided thinning equipment for controlling the topography of silicon wafers is provided, which may include: a first processing table having a first bearing plane for bearing the first surface of the silicon wafer; Two processing stations, which have a second bearing plane for bearing the second surface of the silicon wafer opposite to the first surface; an attachment device, which is used to attach the first surface to the first bearing plane and make the second The surface is attached to the second bearing plane; and the grinding device has a grinding plane and is used to grind the second surface and the first surface of the silicon wafer by means of the grinding plane; wherein the first processing table is configured such that the first bearing The inclination angle of the plane relative to the grinding plane can be adjusted to an angle determined based on the difference between the required thickness at the center position and the required thickness at the edge of the silicon wafer for grinding the second surface of the silicon wafer. The required thickness at the center position and the edge position are required. The required thickness at the edge position is respectively the thickness at the center position and the thickness at the edge position of the silicon wafer under the morphology that needs to be controlled; and wherein the second processing station is configured such that the second bearing plane is parallel to the grinding plane for the purpose of processing the silicon wafer. Grinding of the first surface.

According to the present invention, the inclination angle of the processing table is controlled by adjusting the inclination angle of the bearing plane of the processing table relative to the grinding plane of the grinding device, thereby achieving control of the special morphology of the silicon wafer being processed. In this way, the morphology of the silicon wafer can be effectively and stably controlled without changing the original production mode.

The above features and advantages and other features and advantages of the present invention will be more apparent from the following detailed description of exemplary embodiments of the present invention in conjunction with the accompanying drawings.

1: Single-sided thinning equipment

11:The first processing table

111: First load-bearing plane

12: The second processing table

121: Second load-bearing plane

13:Grinding device

131: Grinding plane

100:Silicon chip

101: First surface

102: Second surface

201~206: Morphology of silicon wafer

D1: height difference

D2: Actual height difference

H:Adjustment amount

S: Processing direction

S1: First processing

S2: Second processing

Figure 1 schematically shows a single-sided thinning method and corresponding single-sided thinning equipment according to an embodiment of the present invention; Figure 2 schematically shows the single-sided thinning method of Figure 1 using the morphological changes of the silicon wafer. The sequential steps of the processing process of thin equipment; Figure 3 schematically shows the manual flatness trimming operation process and the automatic flatness trimming operation process in a block diagram; Figure 4 schematically shows the inclination angle change of the processing table and the silicon The corresponding relationship between the sheet thickness and the topography; and Figures 5a to 5e schematically illustrate the adjustment relationship of the inclination angle of the processing table in the single-side thinning method according to the embodiment of the present invention.

The invention is described in detail below with the aid of exemplary embodiments with reference to the drawings. It should be noted that the following detailed description of the present invention is for illustrative purposes only and is in no way limiting of the present invention. In addition, the same reference numerals are used in the various drawings to represent the same components.

The current line cutting method used by single-sided thinning equipment is linear processing, which can only control the shape of one dimension, and cannot control the shape of more than one dimension or special shape. In the present invention, the inclination angle of the bearing plane of the processing table relative to the grinding plane of the grinding device can be adjusted, thereby controlling the special morphology of the silicon wafer being processed by controlling the inclination angle of the processing table.

As shown in Figure 1, according to an embodiment of the present invention, a single-sided thinning equipment 1 for controlling the topography of silicon wafers is proposed, which may include a first processing table 11, a second processing table 12, an attachment device (not shown) and grinding device 13. Specific instructions are as follows.

The first processing table 11 has a first supporting plane 111 for supporting the first surface 101 of the silicon wafer 100 . That is, the first surface 101 serves as a non-processed surface at this time, and the second surface 102 of the silicon chip 100 opposite to the first surface 101 serves as a processed surface at this time.

The second processing table 12 has a second supporting plane 121 for supporting the second surface 102 of the silicon wafer 100 . That is, the second surface 102 now serves as a non-machined surface, and the first surface 101 now serves as a machined surface.

The attachment device is used to attach the first surface 101 to the first bearing plane 111 and to attach the second surface 102 to the second bearing plane 121 . It should be noted that, for example, for the first surface 101, this attachment will cause the silicon chip 100 to elastically deform when the first surface 101 is carried on the first bearing plane 111, causing its shape to be specifically that of a non-processed surface. The shape complies with the topography of the first bearing plane 111, thereby matching or being consistent with the topography of the first bearing plane 111, that is, it is a plane here.

In this embodiment, the attachment device can be attached by adsorption. For example, the attachment device can be disposed in the first bearing plane 111 of the first processing station 11 and the second bearing plane 121 of the second processing station 12 for attaching the first surface 101 and the second surface 102 of the silicon wafer 100 They are respectively attached to the first bearing plane 111 and the second bearing plane 121 in an adsorption manner.

It is conceivable that the attachment device can also be attached through other means, such as the pressure difference between the upper and lower surfaces of the silicon chip.

The grinding device 13 has a grinding plane 131 and is used to grind the second surface 102 and the first surface 101 of the silicon wafer 100 along the processing direction S by means of the grinding plane 131 . In this embodiment, the grinding device 13 may be a grinding wheel. Furthermore, other types of grinding devices are also conceivable.

In the embodiment of the present invention, the inclination angle of the first processing table 11 is adjustable. For example, the inclination angle can be adjusted by rotating around its geometric center, so that the first bearing plane 111 of the first processing table 11 is relative to the grinding device. The inclination angle of the grinding plane 131 of 13 can be adjusted. The inclination angle of the second processing table 12 may be adjustable or fixed, as long as the second bearing plane 121 of the second processing table 12 is parallel to the grinding plane 131 of the grinding device 13 . As a result, the special morphology of the processed silicon wafers can be controlled by controlling the inclination angle of the processing table.

1 and 2, the single-sided thinning method according to the present invention for controlling the morphology of the silicon wafer will be specifically described in conjunction with the single-sided thinning equipment 1.

The single-sided thinning method may sequentially include a first carrying process, a first adjusting process, a first grinding process, a second carrying process, a second adjusting process and a second grinding process. Specific instructions are as follows.

In the first loading process, the silicon wafer 100 is attached to the bearing plane 111 of the first processing platform 11 through its non-processing surface ie the first surface 101 . It can be understood that, as mentioned above, the attachment can be performed by adsorption by an attachment device.

The morphology of the silicon chip 100 at this time is shown as 201 in FIG. 2 .

In the first adjustment process, the inclination angle of the first bearing plane 111 of the first processing table 11 relative to the grinding plane 131 of the grinding device 13 is adjusted based on the difference between the required thickness C_THK at the center of the silicon wafer 100 and the required thickness E_THK at the edge. , where the required thickness at the center position C_THK and the required thickness at the edge position E_THK are respectively the thickness at the center position and the thickness at the edge position of the silicon wafer 100 under the shape that needs to be controlled.

As shown in Figure 1, the difference between the required thickness C_THK at the center position and the required thickness E_THK at the edge is the height difference D1. Figure 1 shows that the morphology that needs to be controlled is a V-shaped morphology.

In the above adjustment, according to the required V-shaped topography, the first processing table 11 rotates clockwise, so that the inclination angle of the first load-bearing plane 111 of the first processing table 11 relative to the grinding plane 131 of the grinding device 13 is adjusted to The processed surface of the silicon chip 100, that is, the outermost edge portion of the second surface 102 can be ground to a greater thickness D1 than the center portion.

In the first grinding process, the processed surface of the silicon wafer 100 , that is, the second surface 102 is ground through the grinding plane 131 of the grinding device 13 . Thus, the first processing S1 of the silicon wafer 100 is completed. At this time, as mentioned above, the outermost edge portion of the second surface 102 of the silicon chip 100 is ground to a thickness D1 greater than the central portion.

The morphology of the silicon wafer 100 after completing the first grinding process is shown as 202 in FIG. 2 .

During the second loading process, the silicon wafer 100 is turned over and the silicon wafer 100 is attached to the load-bearing plane 121 of the second processing platform 12 through its non-processing surface 102 at this time. .

It is conceivable that the turning process can be performed by a turning mechanism such as a turning robot arm, and as mentioned above, the attachment can be performed in an adsorption manner by an attachment device.

In FIG. 2 , 203 shows the topography of the silicon chip 100 after being turned over, and 204 shows the topography of the silicon chip 100 when it is attached to the second bearing plane 121 of the second processing platform 12 .

In the second adjustment process, the inclination angle of the second bearing plane 121 of the second processing table 12 relative to the grinding plane 131 is adjusted to zero. That is to say, the second bearing plane 121 of the second processing table 12 is made parallel to the grinding plane 131 .

In the second grinding process, the processed surface of the silicon chip 100 at this time, that is, the first surface 101 is ground through the grinding plane 131 . Thus, the second processing S2 of the silicon wafer 100 is completed.

In FIG. 2 , 205 shows the morphology of the silicon wafer 100 after completing the second grinding process but not being released from the attachment, and 206 shows the morphology of the silicon wafer 100 after being released from the attachment.

Through the above method, it can be understood that in the embodiment of the present invention, the first processing table 11 is configured such that the inclination angle of the first bearing plane 111 relative to the grinding plane 131 can be adjusted to the required thickness based on the center position of the silicon wafer 100 The angle determined by the difference between the required thickness at the edge position is used for grinding the second surface 102 of the silicon wafer 100; and the second processing table 12 is configured such that the second bearing plane 121 is parallel to the grinding plane 131 for grinding the silicon wafer. Grinding of first surface 101 of 100 . In this way, the morphology of the silicon wafer can be effectively and stably controlled without changing the original production mode.

In an embodiment of the present invention, the single-sided thinning method may also include a compensation process. In the compensation process, the difference between the required thickness C_THK at the center position and the required thickness E_THK at the edge position is based on the thickness of the silicon wafer 100 before the first grinding process. The difference between the center position thickness and the edge position thickness, that is, the actual height difference D2, is compensated so that the adjustment of the inclination angle of the first bearing plane 111 of the first processing table 11 relative to the grinding plane 131 can be based on the compensated center position demand thickness C_THK and The edge position requires the difference in thickness E_THK.

Specifically, the compensation process involves the flatness trimming operation process of the silicon wafer before single-sided thinning processing, that is, the silicon wafer obtained in the last silicon wafer processing, as shown in Figure 3. During the flatness trimming operation, the flatness measurement of the silicon wafer can be performed on the silicon wafer during the last previous silicon wafer processing. Of course, the flatness measurement can also occur before the single-sided thinning process, for example. Through this flatness measurement, the difference between the actual thickness at the center and the thickness at the edge of the silicon wafer 100 before the single-sided thinning process, or more accurately before the first grinding process, can be obtained.

In order to obtain a more accurate silicon wafer topography that needs to be controlled, the difference between the required thickness at the center and the required thickness at the edges needs to be compensated based on the actual difference between the thickness at the center and the thickness at the edges. Therefore, the adjustment of the inclination angle of the first bearing plane 111 of the first processing table 11 relative to the grinding plane 131 is based on the compensated difference between the required thickness at the center position and the required thickness at the edge position, thus eliminating the need for single-sided thinning before processing. The flatness of the silicon wafer itself affects the morphology that needs to be controlled, making the final morphology of the silicon wafer more accurate.

It is conceivable that the first adjustment process and the compensation process can be performed manually. For example, the operator of a single-sided thinning machine can manually stop the machine or machine and manually stop the machine or machine based on the difference between the required thickness at the center and the required thickness at the edges or based on the compensated difference between the required thickness at the center and the required thickness at the edges. The parameters of the equipment are adjusted so that the inclination angle of the first bearing plane 111 relative to the grinding plane 131 can be adjusted to a corresponding inclination angle. After that, the equipment is manually started and processing is restarted.

Optionally, the first adjustment process can be automatically performed based on the two set parameters of the required thickness C_THK at the center position and the required thickness E_THK at the edge position.

The required thickness C_THK at the center position and the required thickness E_THK at the edge position can be determined by the height difference D1 and the final silicon wafer thickness requirement THK, for example according to the following formulas: C_THK=THK-1/2×D1 and E_THK=THK+1/2×D1.

For example, these two setting parameters and the processing (Recipe) and correction functions bound to them can be added to the software part of the single-sided thinning equipment 1 . When the first adjustment process is carried out, the first processing table 11 can be adjusted, for example rotated, according to the above two setting parameters through the processing and correction function, so that the first bearing plane 111 of the first processing table 11 reaches a height relative to the grinding plane 131 corresponding inclination angle.

It is conceivable that this compensation process can also be carried out automatically by being integrated into the adjustment described above. Specifically, the compensation process can be automatically performed in the following manner: the above two set parameters are compensated according to the center position thickness and edge position thickness of the silicon wafer 100 before the first grinding process, so that the first load bearing capacity of the first processing table 11 The adjustment of the inclination angle of the plane 111 relative to the grinding plane 131 can be automatically performed based on the two compensated set parameters.

It is conceivable that the center position thickness and edge position thickness of the silicon wafer 100 before the first grinding process can be obtained by flatness measurement in the previous last step of silicon wafer processing and automatically fed back to the above two in the processing and correction functions. Set parameters to compensate for this. When entering the first adjustment process, the single-sided thinning equipment can calculate the two compensated setting parameters in the processing and correction functions, so that the first processing table 11 adjusts corresponding to the calculated values, so that the first A bearing plane 111 reaches a corresponding inclination angle relative to the grinding plane 131 .

As shown in Figure 3, the automatically performed compensation process includes a judgment process in which the processing time point at which the first grinding process is performed is compared with the set time point at which the two set parameters are set. At the processing time point If the processing time is earlier than the set time point, the above compensation will not be performed; and if the processing time point is later than the set time point, the above compensation will be performed.

As mentioned above, without the above compensation, the equipment will continue to process; and in the case where the above compensation is judged, the results obtained by the flatness measurement are automatically The above two setting parameters in the processing and correction functions are fed back to the first processing table 11 to directly adjust, and thereafter continue the processing operation. This automated process eliminates the need to manually stop the equipment, allowing the entire processing process to be carried out continuously, thereby improving production efficiency, and because the judgment process is performed automatically, it also saves work effort.

Obviously, the first processing platform 11 and the second processing platform 12 can be the same processing platform, and the first bearing plane 111 of the first processing platform 11 and the second bearing plane 121 of the second processing platform 12 can be the same bearing plane. .

According to the technical concept mentioned above, the same processing platform can be configured such that when grinding the second surface 102 of the silicon wafer 100, the inclination angle of its bearing plane relative to the grinding plane 131 is adjusted to the required thickness based on the center position of the silicon wafer. The angle determined by the difference from the required thickness at the edge position; and when grinding the first surface 101 of the silicon chip 100, the inclination angle of the bearing plane relative to the grinding plane 131 is adjusted to zero.

In this case, in addition to the first adjustment process and the compensation process mentioned above that can be automatically performed, the second adjustment process can also be performed automatically. It is conceivable that the second adjustment process can be automatically performed based on the reverse direction of the two set parameters corresponding to the first adjustment process.

Specifically, for example, when the processing table automatically rotates clockwise based on the height difference D1 or the compensated height difference D1+D2 during the first adjustment process, then the processing table can rotate clockwise based on the height difference D1 or the compensated height difference D1 during the second adjustment process. The height difference D1+D2 is automatically rotated counterclockwise, so that the inclination angle adjustment of the second bearing plane 121 of the second processing table 12 relative to the grinding plane 131 returns to zero.

Therefore, the adjustment amount of the processing table in the first adjustment process can be obtained according to the following formula H=D2+D1, and the adjustment amount in the second adjustment process can be obtained according to the following formula H=-D2-D1. Can What comes to mind is that when the value of H is positive, the processing table rotates counterclockwise, and when the value of H is negative, the processing table rotates clockwise.

As a result, it is possible to control the special morphology of the silicon wafer and automate the entire single-sided thinning process using only a single processing station.

Referring to FIG. 4 , the corresponding relationship between the inclination angle change of the first processing table and the thickness and topography of the silicon wafer in the embodiment of the present invention is shown. It should be noted that the inclination angle of the first processing table shown in FIG. 4 is relative to the horizontal direction. That is to say, the grinding plane 131 of the preset grinding device 13 is in the horizontal direction at this time.

It can be seen that in state (1), when the first processing platform 11 is in the horizontal direction, the processed silicon wafer 100 has a planar shape; in state (2), when the first processing platform 11 When the right end of the first processing table 11 tilts downward, the processed silicon wafer 100 has a V-shaped topography; and in state (3), when the right end of the first processing table 11 tilts upward, the processed silicon wafer 100 has an inverted V-shaped topography. appearance.

The adjustment relationship of the processing table will be explained more clearly below with reference to Figures 5a to 5e.

As shown in Figure 5a, when the final requirement of the silicon wafer morphology is the state (1) in Figure 4, that is, D1=0um and the final silicon wafer thickness requirement is 800um, set the parameters C_THK=800-0=800um and E_THK=800+ 0=800um. If the previous measurement result of the last silicon wafer processing is C_THK=801um and E_THK=800um, that is, D2=801-800=1um, then in the first adjustment process, the adjustment amount H=D2+D1=1+0= through the processing table 1um performs automatic or manual adjustment of the +1um inclination angle, and then in the second adjustment process, uses the processing table adjustment amount H=-1-0=-1um to perform automatic or manual adjustment of the -1um inclination angle.

As shown in Figure 5b, when the final requirement of the silicon wafer morphology is the state (2) in Figure 4, for example, D1=-5um and the final silicon wafer thickness requirement is 800um, set the parameter C_THK=800-(-5/2)= 802.5um And E_THK=800+(-5/2)=797.5um. If the previous measurement result of the last silicon wafer processing is C_THK=801um and E_THK=800um, that is, D2=801-800=1um, then in the first adjustment process, the adjustment amount H=D2+D1=1+(- 5)=-4um for automatic or manual adjustment of -4um inclination, and then in the second adjustment process, automatic or manual adjustment of +4um inclination is performed through the processing table adjustment amount H=-1-(-5)=4um.

As shown in Figure 5c, when the final requirement of the silicon wafer morphology is the state (2) in Figure 4, such as D1=-5um and the final silicon wafer thickness requirement is 800um, set the parameter C_THK=800-(-5/2)= 802.5um and E_THK=800+(-5/2)=797.5um. If the previous measurement result of the last silicon wafer processing is C_THK=800um and E_THK=801um, that is, D2=800-801=-1um, then in the first adjustment process, the adjustment amount H=D2+D1=-1+ is passed through the processing table (-5)=-6um performs automatic or manual adjustment of the -6um inclination angle, and then in the second adjustment process, uses the processing table adjustment amount H=-(-1)-(-5)=6um to perform automatic or manual adjustment of the +6um inclination angle. Manual adjustment.

As shown in Figure 5d, when the final requirement of the silicon wafer morphology is the state (3) in Figure 4, such as D1=+5um and the final silicon wafer thickness requirement is 800um, set the parameter C_THK=800-(5/2)=797.5 um and E_THK=800+(5/2)=802.5um. If the previous measurement result of the last silicon wafer processing is C_THK=801um and E_THK=800um, that is, D2=801-800=1um, then in the first adjustment process, the adjustment amount H=D2+D1=1+5= through the processing table 6um performs automatic or manual adjustment of the +6um inclination angle, and then in the second adjustment process, uses the processing table adjustment amount H=-1-5=-6um to perform automatic or manual adjustment of the -6um inclination angle.

As shown in Figure 5e, when the final requirement of the silicon wafer morphology is the state (3) in Figure 4, such as D1=+5um and the final silicon wafer thickness requirement is 800um, set the parameter C_THK=800-(5/2)=797.5 um and E_THK=800+(5/2)=802.5um. If the last measurement of silicon wafer processing was The measurement results are C_THK=800um and E_THK=801um, that is, D2=800-801=-1um. In the first adjustment process, the +4um inclination angle is adjusted by adjusting the processing table H=D2+D1=-1+5=4um. Automatic or manual adjustment, and then in the second adjustment process, the -4um inclination angle is automatically or manually adjusted through the processing table adjustment amount H=-(-1)-5=-4um.

The above are only specific embodiments of the present invention, but the protection scope of the present invention is not limited thereto. Any person familiar with the technical field can easily think of changes or substitutions within the technical scope disclosed in the present invention. All are covered by the protection scope of the present invention. Therefore, the protection scope of the present invention should be subject to the protection scope of the patent application.

1: Single-sided thinning equipment

11:The first processing table

111: First load-bearing plane

12: The second processing table

121: Second load-bearing plane

13:Grinding device

131: Grinding plane

100:Silicon chip

101: First surface

102: Second surface

D1: height difference

H:Adjustment amount

S: Processing direction

S1: First processing

S2: Second processing

Claims (6)

A single-sided thinning method for controlling the morphology of silicon wafers, including: a first load-bearing process: attaching the silicon wafer to the load-bearing plane of the first processing table through its first surface; a first adjustment process: based on the The difference between the required thickness at the center position and the required thickness at the edge position of the silicon wafer adjusts the inclination angle of the bearing plane of the first processing table relative to the grinding plane of the grinding device, where the required thickness at the center position and the required thickness at the edge position are respectively The thickness of the center position and the thickness of the edge position of the silicon wafer under the required morphology; the first grinding process: grinding the second surface of the silicon wafer opposite to the first surface through the grinding plane of the grinding device ; The second load-bearing process: turn over the silicon wafer and attach the silicon wafer to the load-bearing plane of the second processing table through its second surface; the second adjustment process: turn the load-bearing plane of the second processing table relative to The inclination angle of the grinding plane is adjusted to zero; the second grinding process: grinding the first surface of the silicon wafer through the grinding plane; and the compensation process: in the compensation process, the required thickness at the center position and the edge position The difference in required thickness is compensated based on the difference between the thickness at the center and the thickness at the edge of the silicon wafer before the first grinding process, so that the adjustment of the inclination angle of the bearing plane of the first processing table relative to the grinding plane can be based on compensation. The difference between the required thickness at the center position and the required thickness at the edge position is determined; wherein the first adjustment process can be automatically performed based on the two setting parameters of the required thickness at the center position and the required thickness at the edge position; The required thickness C_THK at the center position and the required thickness E_THK at the edge position can be determined by the height difference D1 and the final silicon wafer thickness requirement THK. For example, according to the following formulas: C_THK=THK-1/2×D1 and E_THK=THK+1/2×D1. determine. The single-sided thinning method as described in claim 2, wherein the compensation process can be automatically performed in the following manner: performing the two set parameters according to the center position thickness and edge position thickness of the silicon wafer before the first grinding process. Compensation is performed so that the adjustment of the inclination angle of the bearing plane of the first processing table relative to the grinding plane can be automatically performed based on the two compensated setting parameters. The single-sided thinning method according to claim 2, wherein the compensation process includes a judgment process, in which the processing time point of performing the first grinding process is compared with the setting time point of setting the two setting parameters. In comparison, if the processing time point is earlier than the set time point, the compensation is not performed; and if the processing time point is later than the set time point, the compensation is performed. The single-sided thinning method according to any one of claims 1 to 3, wherein the first processing platform and the second processing platform are the same processing platform, and the load-bearing plane of the first processing platform is in contact with the second processing platform. The bearing plane of the platform is the same bearing plane. The single-sided thinning method according to claim 4, wherein the second adjustment process can be automatically performed based on the reverse direction of the two setting parameters and the first adjustment process. A single-sided thinning equipment for controlling the morphology of silicon wafers, including: a first processing platform having a first bearing plane for bearing the first surface of the silicon wafer; a second processing platform having a bearing for bearing the first surface of the silicon wafer; A second bearing plane of the second surface of the silicon chip opposite to the first surface; an attachment device for attaching the first surface to the first bearing plane and attaching the second surface to on the second load-bearing plane; and A grinding device having a grinding plane and used for grinding the second surface and the first surface of the silicon wafer by means of the grinding plane; wherein the first processing table is configured such that the first bearing plane is relative to the grinding plane The inclination angle of the plane can be adjusted to an angle determined based on the difference between the required thickness at the center of the silicon wafer and the required thickness at the edge for grinding the second surface of the silicon wafer, the required thickness at the center and the required thickness at the edge. The thickness at the center position and the thickness at the edge position of the silicon wafer under the required morphology to be controlled are respectively; the difference between the required thickness at the center position and the required thickness at the edge position is based on the thickness at the center position of the silicon wafer before the first grinding process. The difference between the thickness at the edge position and the thickness at the edge position is compensated so that the adjustment of the inclination angle of the bearing plane of the first processing table relative to the grinding plane can be performed based on the compensated difference between the required thickness at the center position and the required thickness at the edge position; wherein the The first adjustment process can be automatically performed based on the two set parameters of the required thickness at the center position and the required thickness at the edge position; the required thickness at the center position C_THK and the required thickness at the edge position E_THK can be determined by the height difference D1 and the final silicon wafer thickness requirement. THK is determined, for example, according to the following formulas: C_THK=THK-1/2×D1 and E_THK=THK+1/2×D1; and wherein the second processing table is configured such that the second bearing plane is parallel to the grinding plane For grinding the first surface of the silicon wafer.