CN104746146A - Monocrystalline silicon slice texturing method - Google Patents
Monocrystalline silicon slice texturing method Download PDFInfo
- Publication number
- CN104746146A CN104746146A CN201310728976.6A CN201310728976A CN104746146A CN 104746146 A CN104746146 A CN 104746146A CN 201310728976 A CN201310728976 A CN 201310728976A CN 104746146 A CN104746146 A CN 104746146A
- Authority
- CN
- China
- Prior art keywords
- making herbs
- wool
- monocrystalline silicon
- silicon piece
- solution
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Silicon Compounds (AREA)
Abstract
The invention discloses a monocrystalline silicon slice texturing method including the steps: putting a monocrystalline silicon slice into a pre-prepared texturing solution; in the set texturing time, carrying out intermittent shaking of the monocrystalline silicon slice and/or the texturing solution; and taking out the monocrystalline silicon slice from the texturing solution. According to the texturing method provided by the embodiment of the invention, because the physical intermittent shaking way is adopted in the texturing process, experimental data shows that the texturing method provided by the embodiment of the invention can obtain the monocrystalline silicon slice having stable textured surface morphology, neat and uniform appearance and good light trapping property based on an existing texturing solution.
Description
Technical field
The present invention relates to technical field of solar, particularly relate to a kind of etching method of monocrystalline silicon piece.
Background technology
At present, in the fabrication of a solar cell, in order to make monocrystalline silicon piece reduce luminous reflectance to greatest extent, improve short-circuit current (Isc), increase PN junction area, finally improve photoelectric transformation efficiency, generally need to carry out making herbs into wool operation to monocrystalline silicon sheet surface.Effect after fine-hair maring using monocrystalline silicon slice and stability problem are one of core technologies of high performance solar batteries, material impact is had to battery performance, particularly in the high performance solar batteries taking n type single crystal silicon as substrate, more and more higher to the requirement of the stable appearance after making herbs into wool and reflectivity.
Current fine-hair maring using monocrystalline silicon slice mainly produces anisotropic etch by chemical reaction at silicon chip surface, forms the matte of intensive micro-pyramid pyramid structure.Particularly, making herbs into wool solution for fine-hair maring using monocrystalline silicon slice mainly contains two types: a kind of making herbs into wool solution of the traditional IPA series be made up of the mixing solutions of sodium hydroxide, water glass and Virahol IPA, the making herbs into wool solution of the non-IPA series that another kind is made up of sodium hydroxide and making herbs into wool additive.
When adopting the making herbs into wool solution of traditional IPA series to carry out making herbs into wool, the fluctuation of making herbs into wool effect is comparatively large, and the monocrystalline silicon piece pattern fluctuation after namely identical technique different batches making herbs into wool differs greatly, and the stability especially for the making herbs into wool effect of N monocrystalline silicon piece is difficult to control more.
When adopting the making herbs into wool solution of non-IPA series to carry out making herbs into wool, the stability of making herbs into wool pattern promotes to some extent than the making herbs into wool pattern of the making herbs into wool solution adopting traditional IPA series, but in the making herbs into wool solution of non-IPA series, the preparation technology of making herbs into wool additive is not so good as the mature preparation process of IPA in the making herbs into wool solution of traditional IPA series, and the composition of making herbs into wool additive itself and stability also can cause the fluctuation of making herbs into wool effect.Therefore, adopt the leather producing process of the making herbs into wool solution of non-IPA series, the stability of making herbs into wool effect still compares and is difficult to control.
Therefore, how obtaining the matte stablizing controlled monocrystalline silicon piece is the problem that those skilled in the art need solution badly.
Summary of the invention
Embodiments provide a kind of etching method of monocrystalline silicon piece, the monocrystalline silicon piece of matte stable appearance can be realized.
The etching method of a kind of monocrystalline silicon piece that the embodiment of the present invention provides, comprising:
Monocrystalline silicon piece is put into previously prepared making herbs into wool solution;
Within the making herbs into wool time of setting, intermittence is carried out to described monocrystalline silicon piece and/or described making herbs into wool solution and rocks;
Described monocrystalline silicon piece is taken out from described making herbs into wool solution.
The above-mentioned etching method that the embodiment of the present invention provides, due to the mode that the intermittence that have employed physical property in making herbs into wool process is rocked, therefore, data are known by experiment, the above-mentioned etching method that the embodiment of the present invention provides, on the basis adopting existing making herbs into wool solution, just can obtain matte stable appearance, the outward appearance monocrystalline silicon piece that neatly all even sunken optical property is good.
Preferably, for the ease of implementing, in the above-mentioned etching method that the embodiment of the present invention provides, described making herbs into wool solution is the mixing solutions of sodium hydroxide, water glass, isopropyl alcohol and water.
Preferably, in order to obtain good making herbs into wool effect, in the above-mentioned etching method that the embodiment of the present invention provides, in the mixing solutions of described sodium hydroxide, water glass, isopropyl alcohol and water, the mass percent of sodium hydroxide is 0.8%-2%, the mass percent of water glass is 0.8%-2%, and the volume percent of Virahol is 5%-8%.
Preferably, for the ease of implementing, in the above-mentioned etching method that the embodiment of the present invention provides, described making herbs into wool solution is the mixing solutions of sodium hydroxide, water and making herbs into wool additive.
Preferably, in order to obtain good making herbs into wool effect, in the above-mentioned etching method that the embodiment of the present invention provides, be in the mixing solutions of sodium hydroxide, water and making herbs into wool additive at described making herbs into wool solution, the mass percent of described sodium hydroxide is 1%-2.5%, and the volume percent of described making herbs into wool additive is 0.5%-2%.
Preferably, in order to obtain good making herbs into wool effect, in the above-mentioned etching method that the embodiment of the present invention provides, the described making herbs into wool time is 25min-40min, and/or the temperature of described making herbs into wool solution is 75 DEG C-90 DEG C.
Preferably, in order to obtain good making herbs into wool effect, in the above-mentioned etching method that the embodiment of the present invention provides, the interval time that described intermittence is rocked is 3min-10min, and/or the number of times that described intermittence is rocked is 4 times-8 times.
Preferably, in order to obtain good making herbs into wool effect, in the above-mentioned etching method that the embodiment of the present invention provides, the time length of at every turn rocking is 5s-15s.
Preferably, in order to obtain good making herbs into wool effect, in the above-mentioned etching method that the embodiment of the present invention provides, described monocrystalline silicon piece is put into previously prepared making herbs into wool solution after, also comprise:
The bubbling that described making herbs into wool solution is continued, stir or add recycle pump process, until described monocrystalline silicon piece is taken out from described making herbs into wool solution.
Preferably, in order to obtain good making herbs into wool effect, in the above-mentioned etching method that the embodiment of the present invention provides, before monocrystalline silicon piece being put into previously prepared making herbs into wool solution, also comprise:
Pre-washing process is carried out to described monocrystalline silicon piece;
Carry out just throwing process to the monocrystalline silicon piece after carrying out pre-washing process.
Accompanying drawing explanation
One of schema of the etching method of the monocrystalline silicon piece that Fig. 1 provides for the embodiment of the present invention;
The schema two of the etching method of the monocrystalline silicon piece that Fig. 2 provides for the embodiment of the present invention;
The structural representation of the texturing slot that Fig. 3 provides for the embodiment of the present invention.
Embodiment
Below in conjunction with accompanying drawing, the embodiment of the etching method of the monocrystalline silicon piece that the embodiment of the present invention provides is described in detail.
The etching method of a kind of monocrystalline silicon piece that the embodiment of the present invention provides, as shown in Figure 1, specifically comprises the following steps:
S101, monocrystalline silicon piece is put into previously prepared making herbs into wool solution;
S102, setting the making herbs into wool time in, intermittence is carried out to monocrystalline silicon piece and/or making herbs into wool solution and rocks; Wherein, the number of times that intermittence is rocked and interval time are predetermined according to the making herbs into wool time, the general making herbs into wool time is longer, the number of times that intermittence is rocked is more, particularly, the making herbs into wool time is generally 25 minutes to 40 minutes, and interval time is 3 minutes to 10 minutes, and the number of times that intermittence is rocked is generally 4 times to 8 times;
S103, monocrystalline silicon piece to be taken out from making herbs into wool solution.
The above-mentioned etching method that the embodiment of the present invention provides, due to the mode that the intermittence that have employed physical property in making herbs into wool process is rocked, therefore, data are known by experiment, the above-mentioned etching method that the embodiment of the present invention provides, on the basis adopting existing making herbs into wool solution, just can obtain matte stable appearance, the outward appearance monocrystalline silicon piece that neatly all even sunken optical property is good.
Particularly, in the specific implementation, in the above-mentioned etching method that the embodiment of the present invention provides, the setting of making herbs into wool time is relevant with the selection of making herbs into wool solution, and the different making herbs into wool time set by making herbs into wool solution is different.
It should be noted that, in the making herbs into wool process of step S102, the main purpose of rocking owing to carrying out intermittence to monocrystalline silicon piece and/or making herbs into wool solution is to carry out intermittent disturbance to the reactive system of monocrystalline silicon piece and making herbs into wool solution, therefore, in the specific implementation, only can carry out intermittence to monocrystalline silicon piece to rock, also only intermittent rocking can be carried out to making herbs into wool solution, certainly, also can carry out intermittence to monocrystalline silicon piece and making herbs into wool solution simultaneously and rock, be not specifically limited at this.
Particularly, in the above-mentioned etching method that the embodiment of the present invention provides, making herbs into wool solution can adopt the making herbs into wool solution of traditional IPA series, is specially sodium hydroxide NaOH, water glass Na
2siO
3, Virahol C
3h
3and the mixing solutions of water O(IPA).Because the composition of making herbs into wool solution itself and stability can cause the fluctuation of making herbs into wool effect, and IPA is as conventional chemical reagent, and production technique is very ripe, can ensure the stability of self component and performance.Therefore, adopt the making herbs into wool solution be made up of the mixing solutions of sodium hydroxide, water glass, isopropyl alcohol and water in leather producing process, can obtain further and stablize controlled matte.
Preferably, in the above-mentioned etching method that the embodiment of the present invention provides, in the mixing solutions of sodium hydroxide, water glass, isopropyl alcohol and water, the mass percent of sodium hydroxide controls between 0.8%-2%, the mass percent of water glass controls between 0.8%-2%, the volume percent of Virahol controls between 5%-8%, and making herbs into wool effect is better.This is because NaOH concentration and isopropyl alcohol concentration have material impact to the pyramidal pyramid degree of monocrystalline silicon piece texture and making herbs into wool effect.When the concentration of sodium hydroxide is lower, monocrystalline silicon piece erosion rate can be relatively low; When the concentration of sodium hydroxide is higher, the monocrystalline silicon piece etching anisotropy factor can change, thus can destroy the geometrical shape of the pyramid of matte, and therefore, the concentration of the sodium hydroxide chosen is moderate.And in the mixing solutions of sodium hydroxide, water glass, isopropyl alcohol and water, Virahol can play and reduce monocrystalline silicon sheet surface tension force, reduce the effect of bubble in the adhesion of monocrystalline silicon sheet surface, simultaneously, Virahol can also play and weaken the effect of sodium hydroxide to the corrosion dynamics of silicon chip, thus easily controls suede structure.
Or particularly, in the above-mentioned etching method that the embodiment of the present invention provides, making herbs into wool solution also can adopt the making herbs into wool solution of non-IPA series, is specially the mixing solutions of sodium hydroxide, water and making herbs into wool additive.Wherein, making herbs into wool additive is current material, and the composition of different making herbs into wool additives is different, does not repeat at this, and certainly, in the specific implementation, making herbs into wool solution also can be that other realizes the solution of the present invention program, does not limit at this.
Preferably, in order to obtain good making herbs into wool effect, in the above-mentioned etching method that the embodiment of the present invention provides, in the mixing solutions of sodium hydroxide, water and making herbs into wool additive, the mass percent of sodium hydroxide is 1%-2.5%, and the volume percent of making herbs into wool additive is 0.5-2%.
Particularly, in the specific implementation, in the above-mentioned etching method that the embodiment of the present invention provides, the length of making herbs into wool time can not affect the speed of monocrystalline silicon piece corrosion in theory, but the length of making herbs into wool time can affect the extent of corrosion of monocrystalline silicon piece, thus affect the pattern of monocrystalline silicon piece texture.Therefore, preferably, in order to obtain the good matte of clean and tidy evenly, the sunken optical property of outward appearance, in the above-mentioned etching method that the embodiment of the present invention provides, making herbs into wool time controling is good between for 25min-40min.
Preferably, in order to obtain good making herbs into wool effect, in the above-mentioned etching method that the embodiment of the present invention provides, the interval time that intermittence is rocked controls between 3min-10min.
Preferably, in order to obtain good making herbs into wool effect, in the above-mentioned etching method that the embodiment of the present invention provides, the number of times that intermittence is rocked controls at 4 times-8 times as good.
Preferably, in order to obtain good making herbs into wool effect, in the above-mentioned etching method that the embodiment of the present invention provides, the time length of at every turn rocking is 5s-15s is good.
Preferably, in order to obtain good making herbs into wool effect, in the above-mentioned etching method that the embodiment of the present invention provides, the temperature of making herbs into wool solution controls between 75 DEG C-90 DEG C as good.This is because temperature is too high, making herbs into wool solution evaporation can be caused to aggravate, crystal face preferentially property reduces, and matte continuity reduces, and the too high erosion rate that also can cause of temperature of the solution of making herbs into wool is simultaneously too fast, thus causes matte pattern to be also difficult to control; And temperature is too low, erosion rate can be caused excessively slow, thus can extend in the making herbs into wool cycle.
Preferably, in order to obtain good making herbs into wool effect, in the above-mentioned etching method that the embodiment of the present invention provides, after monocrystalline silicon piece being put into previously prepared making herbs into wool solution, can also comprise:
The bubbling that making herbs into wool solution is continued, stir or add recycle pump process, until monocrystalline silicon piece is taken out from making herbs into wool solution.
This be due to, the bubbling in whole making herbs into wool process, making herbs into wool solution continued, stir or add recycle pump process, the uniformity coefficient of making herbs into wool solution can be improved, and make reaction bubble in time from monocrystalline silicon sheet surface desorption, thus stable form and the matte pattern of making herbs into wool can be controlled.
Preferably, in order to obtain good making herbs into wool effect, in the above-mentioned etching method that the embodiment of the present invention provides, as shown in Figure 2, before monocrystalline silicon piece being put into previously prepared making herbs into wool solution, can also comprise:
S104, pre-washing process is carried out to monocrystalline silicon piece;
S105, carry out just throwing process to the monocrystalline silicon piece after carrying out pre-washing process.
This is because, usually through monocrystalline silicon piece that the multiple working procedures such as section, grinding, chamfering, polishing are processed into, its surface adsorption has various impurity, as particle, metallics, silica flour dust and organic impurity etc., therefore, before making herbs into wool, need to carry out pre-washing to monocrystalline silicon piece, to eliminate each pollutant, and the clean level of cleaning directly can affect the making herbs into wool effect of monocrystalline silicon piece.
Particularly, in the specific implementation, in the above-mentioned etching method that the embodiment of the present invention provides, step S104 carries out pre-washing process to monocrystalline silicon piece, can specifically comprise:
Monocrystalline silicon piece being put in temperature is about 65 DEG C, by deionized water DIW, ammonium hydroxide NH
4oH and hydrogen peroxide H
2o
2about 15min is soaked in the homogeneous mixture solotion of composition;
By monocrystalline silicon piece from above-mentioned deionized water DIW, ammonium hydroxide NH
4oH and hydrogen peroxide H
2o
2mixing solutions in take out, and with deionized water, this monocrystalline silicon piece to be cleaned.
By monocrystalline silicon piece at ionized water DIW, ammonium hydroxide NH
4oH and hydrogen peroxide H
2o
2mixing solutions in soak, this is due under high PH condition (as 10,11), H
2o
2be very strong oxygenant, monocrystalline silicon sheet surface can be made to be oxidized, and meanwhile, NH
4oH then can at leisure by the oxide dissolution of monocrystalline silicon sheet surface.Therefore, this oxidation-dissolving, reoxidizes the process of dissolving again, can gradually by the organic impurity of monocrystalline silicon sheet surface, and other contaminant particles is removed.
Particularly, in the above-mentioned etching method that the embodiment of the present invention provides, step S105 carries out just throwing process to the monocrystalline silicon piece after carrying out pre-washing process, main purpose is dirty in order to remove silicon chip surface, and partial injury layer, in the specific implementation, can specifically comprise:
Be soak about 4min in the aqueous solution of the sodium hydroxide of about 85 DEG C in temperature by the monocrystalline silicon piece after carrying out pre-washing process;
Monocrystalline silicon piece is taken out from the aqueous solution of above-mentioned sodium hydroxide, and with deionized water, this monocrystalline silicon piece is cleaned.
Monocrystalline silicon piece is soaked in the aqueous solution of sodium hydroxide, this is because high alkali liquid at high temperature can carry out fast erosion to monocrystalline silicon piece, if monocrystalline silicon sheet surface has affected layer to exist, then adopt above-mentioned technique, during beginning, the erosion rate of monocrystalline silicon piece is higher, equivalent damage layer is removed completely, the erosion rate of monocrystalline silicon piece can reduce, through corrosion, the dirty of monocrystalline silicon sheet surface and surface particles can be made to depart from monocrystalline silicon sheet surface and to enter solution, thus the surface of monocrystalline silicon piece is further cleaned.If monocrystalline silicon sheet surface does not have affected layer, then in the aqueous solution of above-mentioned sodium hydroxide, the erosion rate ratio of the different crystal face of monocrystalline silicon piece is about: V (110): V (100): V (111)=25:15:1, monocrystalline silicon sheet surface also can not go out suede because anisotropy produces in advance, thus also can not impact the making herbs into wool process of next step monocrystalline silicon piece.
Preferably, in order to obtain good making herbs into wool effect, in the above-mentioned etching method that the embodiment of the present invention provides, after monocrystalline silicon piece takes out by step S103 from making herbs into wool solution, can also comprise:
Deionized water is adopted to clean monocrystalline silicon piece, to remove the making herbs into wool solution residuing in monocrystalline silicon sheet surface;
After adopting deionized water to clean monocrystalline silicon piece, monocrystalline silicon piece is dried.
The object of drying mainly prevents monocrystalline silicon piece from polluting again and produces the marking at monocrystalline silicon sheet surface.Only after washed with de-ionized water, air-dry is in atmosphere far from being enough.In the specific implementation, generally rotary furnace drying can be passed through, or by warm air or hot nitrogen, monocrystalline silicon piece is become dry, also can by being coated with the liquid wiped and be easy to volatilize at monocrystalline silicon sheet surface, as Virahol etc., dry monocrystalline silicon sheet surface by the quick volatilization of liquid, certainly, can also be dried by alternate manner, not limit at this.
Particularly, in the specific implementation, the making herbs into wool process of monocrystalline silicon piece is generally carried out in a texturing slot device, and the structure of texturing slot device as shown in Figure 3, comprising: texturing slot 01 and be arranged in texturing slot 01 for placing the silicon chip flower basket 02 of monocrystalline silicon piece.Be described in detail below by four the concrete etching methods of example to the above-mentioned monocrystalline silicon piece provided in the embodiment of the present invention.
Example one:
Select the mixing solutions of sodium hydroxide, water glass, water and Virahol as making herbs into wool solution, and in making herbs into wool process, to the bubbling process that making herbs into wool solution continues, the etching method of monocrystalline silicon piece specifically comprises the following steps:
(1), monocrystalline silicon piece is loaded in the silicon chip flower basket in texturing slot;
(2), pre-washing is carried out to monocrystalline silicon piece;
Particularly, in the specific implementation: first, in texturing slot, add 30L deionized water DIW;
Secondly, when deionized water being heated to about 65 DEG C, start in texturing slot, add 0.3L ammonium hydroxide NH
4oH and 4L hydrogen peroxide H
2o
2and stir;
After about 15min, adopt deionized water overflow about 6min in texturing slot, the ammonium hydroxide and hydrogen peroxide that remain in monocrystalline silicon sheet surface are washed;
Finally, the solution in texturing slot is all discharged totally.
(3) carry out just throwing process to monocrystalline silicon piece;
Particularly, in the specific implementation: first, in texturing slot, add 3000g sodium hydroxide NaOH and 21L water, keep temperature to be about 85 DEG C;
After about 4min, adopt deionized water overflow about 6min in texturing slot, the sodium hydroxide remaining in monocrystalline silicon sheet surface is washed;
Finally, the solution in texturing slot is all discharged totally.
(4) making herbs into wool process is carried out to monocrystalline silicon piece;
Particularly, in the specific implementation: add 21L water to texturing slot;
When water being heated to about 70 DEG C, in texturing slot, add 420g sodium hydroxide NaOH and 315g water glass Na
2siO
3, stir;
When temperature rises to 85 DEG C, in texturing slot, add 2000ml Virahol IPA, stir;
When the temperature recovery to 85 DEG C of above-mentioned making herbs into wool solution, open bubbling, start timing, and keep the temperature of making herbs into wool solution to maintain about 85 DEG C;
Respectively when 5min, during 8min, during 13min, during 16min, during 20min, during 29min, during 33min, double swerve silicon chip flower basket during 37min, and to rock the lasting time be 12S at every turn;
During 40min, close bubbling, silicon chip flower basket is taken out from texturing slot.
(5) adopt deionized water to carry out overflow process about 6min to monocrystalline silicon piece, the making herbs into wool solution remaining in monocrystalline silicon sheet surface is washed;
(6) monocrystalline silicon piece is put into drier to dry.
Example two:
The making herbs into wool solution selected is identical with example one, and the concrete steps of the etching method of monocrystalline silicon piece and example one are except step (4), and to carry out making herbs into wool process to monocrystalline silicon piece different, and other step is all identical.
Particularly, in example two, step (4) carries out making herbs into wool process to monocrystalline silicon piece, specifically comprises:
21L water is added to texturing slot;
When water being heated to about 70 DEG C, in texturing slot, add 420g sodium hydroxide NaOH and 315g water glass Na
2siO
3, stir;
When temperature rises to 85 DEG C, in texturing slot, add 2000ml Virahol IPA, stir;
When the temperature recovery to 85 DEG C of above-mentioned making herbs into wool solution, start timing, and keep the temperature of making herbs into wool solution to maintain about 85 DEG C;
Respectively when 3min, during 6min, during 8min, during 10min, during 13min, during 15min, during 20min, double swerve silicon chip flower basket during 25min, and to rock the lasting time be 12S at every turn;
During 30min, silicon chip flower basket is taken out from texturing slot.
Example three:
The making herbs into wool solution selected is different from example one and example two, example three selects the mixing solutions of sodium hydroxide, water and making herbs into wool additive as making herbs into wool solution, and the concrete steps of the etching method of monocrystalline silicon piece and example one and example two are except step (4), and to carry out making herbs into wool process to monocrystalline silicon piece different, other step is all identical.
Particularly, in example three, step (4) carries out making herbs into wool process to monocrystalline silicon piece, specifically comprises:
20L deionized water is added to texturing slot;
When deionized water being heated to about 70 DEG C, in texturing slot, adding 500g sodium hydroxide NaOH, stir;
When temperature rises to 80 DEG C, in texturing slot, add 240ml making herbs into wool additive, open bubbling, start timing, and keep the temperature of making herbs into wool solution to maintain about 80 DEG C;
Respectively when 5min, during 10min, during 15min, double swerve silicon chip flower basket during 20min, and to rock the lasting time be 12S at every turn;
During 25min, close bubbling, silicon chip flower basket is taken out from texturing slot.
Example four:
The making herbs into wool solution selected is identical with example three, and the concrete steps of the etching method of monocrystalline silicon piece and example three are except step (4), and to carry out making herbs into wool process to monocrystalline silicon piece different, and other step is all identical.
Particularly, in example four, step (4) carries out making herbs into wool process to monocrystalline silicon piece, specifically comprises:
First, 20L deionized water is added to texturing slot;
When deionized water being heated to about 70 DEG C, in texturing slot, adding 500g sodium hydroxide NaOH, stir;
When temperature rises to 80 DEG C, in texturing slot, add 240ml making herbs into wool additive, start timing, and keep the temperature of making herbs into wool solution to maintain about 80 DEG C;
Respectively when 5min, during 10min, during 15min, double swerve silicon chip flower basket during 20min, and to rock the lasting time be 12S at every turn;
During 25min, silicon chip flower basket is taken out from texturing slot.
It should be noted that, in above-mentioned four examples, it is all rocking of only carrying out silicon chip flower basket that the intermittence adopted in making herbs into wool process is rocked, in concrete enforcement, also can carry out intermittent stirring to realize carrying out intermittence to making herbs into wool solution and rocking to making herbs into wool solution, also can rock and realize that intermittence is carried out to monocrystalline silicon piece and making herbs into wool solution and rock by carrying out intermittence to texturing slot, certainly, can also be other intermittent mechanical disturbance that can realize the present invention program, not limit at this.
Detect data by experiment known, in above-mentioned four examples, the making herbs into wool best results of example one.
The etching method of a kind of monocrystalline silicon piece that the embodiment of the present invention provides, comprising: monocrystalline silicon piece is put into previously prepared making herbs into wool solution; Within the making herbs into wool time of setting, intermittence is carried out to monocrystalline silicon piece and/or making herbs into wool solution and rocks; Monocrystalline silicon piece is taken out from making herbs into wool solution.The above-mentioned etching method that the embodiment of the present invention provides, due to the mode that the intermittence that have employed physical property in making herbs into wool process is rocked, therefore, data are known by experiment, the above-mentioned etching method that the embodiment of the present invention provides, on the basis adopting existing making herbs into wool solution, just can obtain matte stable appearance, the outward appearance monocrystalline silicon piece that neatly all even sunken optical property is good.
Obviously, those skilled in the art can carry out various change and modification to the present invention and not depart from the spirit and scope of the present invention.Like this, if these amendments of the present invention and modification belong within the scope of the claims in the present invention and equivalent technologies thereof, then the present invention is also intended to comprise these change and modification.
Claims (10)
1. an etching method for monocrystalline silicon piece, is characterized in that, comprising:
Monocrystalline silicon piece is put into previously prepared making herbs into wool solution;
Within the making herbs into wool time of setting, intermittence is carried out to described monocrystalline silicon piece and/or described making herbs into wool solution and rocks;
Described monocrystalline silicon piece is taken out from described making herbs into wool solution.
2. etching method as claimed in claim 1, it is characterized in that, described making herbs into wool solution is the mixing solutions of sodium hydroxide, water glass, isopropyl alcohol and water.
3. etching method as claimed in claim 2, it is characterized in that, in the mixing solutions of described sodium hydroxide, water glass, isopropyl alcohol and water, the mass percent of sodium hydroxide is 0.8%-2%, the mass percent of water glass is 0.8%-2%, and the volume percent of Virahol is 5%-8%.
4. etching method as claimed in claim 1, it is characterized in that, described making herbs into wool solution is the mixing solutions of sodium hydroxide, water and making herbs into wool additive.
5. etching method as claimed in claim 4, it is characterized in that, be in the mixing solutions of sodium hydroxide, water and making herbs into wool additive at described making herbs into wool solution, the mass percent of described sodium hydroxide is 1%-2.5%%, and the volume percent of described making herbs into wool additive is 0.5%-2%.
6. the etching method as described in any one of claim 2-5, is characterized in that, the described making herbs into wool time is 25min-40min, and/or the temperature of described making herbs into wool solution is 75 DEG C-90 DEG C.
7. the etching method as described in any one of claim 1-5, is characterized in that, the interval time that described intermittence is rocked is 3min-10min, and/or the number of times that described intermittence is rocked is 4 times-8 times.
8. etching method as claimed in claim 7, it is characterized in that, the time length of at every turn rocking is 5s-15s.
9. the etching method as described in any one of claim 1-5, is characterized in that, described monocrystalline silicon piece is put into previously prepared making herbs into wool solution after, also comprise:
The bubbling that described making herbs into wool solution is continued, stir or add recycle pump process, until described monocrystalline silicon piece is taken out from described making herbs into wool solution.
10. the etching method as described in any one of claim 1-5, is characterized in that, before monocrystalline silicon piece being put into previously prepared making herbs into wool solution, also comprises:
Pre-washing process is carried out to described monocrystalline silicon piece;
Carry out just throwing process to the monocrystalline silicon piece after carrying out pre-washing process.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310728976.6A CN104746146A (en) | 2013-12-25 | 2013-12-25 | Monocrystalline silicon slice texturing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310728976.6A CN104746146A (en) | 2013-12-25 | 2013-12-25 | Monocrystalline silicon slice texturing method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN104746146A true CN104746146A (en) | 2015-07-01 |
Family
ID=53586375
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310728976.6A Pending CN104746146A (en) | 2013-12-25 | 2013-12-25 | Monocrystalline silicon slice texturing method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN104746146A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106637419A (en) * | 2016-12-27 | 2017-05-10 | 重庆晶宇光电科技有限公司 | Corrosion device for wafers |
| CN107502356A (en) * | 2017-07-14 | 2017-12-22 | 合肥文胜新能源科技有限公司 | A kind of silicon chip surface matte preparation corrosive liquid |
| CN111074280A (en) * | 2019-12-20 | 2020-04-28 | 中建材浚鑫科技有限公司 | Novel alkali polishing process |
| CN111341879A (en) * | 2020-01-07 | 2020-06-26 | 通威太阳能(眉山)有限公司 | Method for manufacturing crystalline silicon solar cell and crystalline silicon solar cell |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0856873A2 (en) * | 1997-02-04 | 1998-08-05 | Canon Kabushiki Kaisha | Wafer processing apparatus, wafer processing method, and SOI wafer fabrication method |
| CN1697140A (en) * | 2004-05-10 | 2005-11-16 | 中国科学院半导体研究所 | Etching technique for preparing ultrathin flexible silicon sustrate through two step method in wet-process etching |
| CN101409312A (en) * | 2008-10-20 | 2009-04-15 | 宁海县日升电器有限公司 | Method for fine-hair maring using monocrystalline silicon slice |
| CN101876088A (en) * | 2010-03-19 | 2010-11-03 | 常州亿晶光电科技有限公司 | Polycrystalline silicon texturing method |
| CN102157352A (en) * | 2011-03-23 | 2011-08-17 | 北京大学 | Wet etching method and device for micro-nano structure |
| CN103014878A (en) * | 2012-12-03 | 2013-04-03 | 天津中环领先材料技术有限公司 | Processing method for low-gloss acid corrosion slice |
| CN104562211A (en) * | 2014-12-26 | 2015-04-29 | 横店集团东磁股份有限公司 | Texture surface making method capable of improving conversion efficiency of monocrystal cell |
-
2013
- 2013-12-25 CN CN201310728976.6A patent/CN104746146A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0856873A2 (en) * | 1997-02-04 | 1998-08-05 | Canon Kabushiki Kaisha | Wafer processing apparatus, wafer processing method, and SOI wafer fabrication method |
| CN1697140A (en) * | 2004-05-10 | 2005-11-16 | 中国科学院半导体研究所 | Etching technique for preparing ultrathin flexible silicon sustrate through two step method in wet-process etching |
| CN101409312A (en) * | 2008-10-20 | 2009-04-15 | 宁海县日升电器有限公司 | Method for fine-hair maring using monocrystalline silicon slice |
| CN101876088A (en) * | 2010-03-19 | 2010-11-03 | 常州亿晶光电科技有限公司 | Polycrystalline silicon texturing method |
| CN102157352A (en) * | 2011-03-23 | 2011-08-17 | 北京大学 | Wet etching method and device for micro-nano structure |
| CN103014878A (en) * | 2012-12-03 | 2013-04-03 | 天津中环领先材料技术有限公司 | Processing method for low-gloss acid corrosion slice |
| CN104562211A (en) * | 2014-12-26 | 2015-04-29 | 横店集团东磁股份有限公司 | Texture surface making method capable of improving conversion efficiency of monocrystal cell |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106637419A (en) * | 2016-12-27 | 2017-05-10 | 重庆晶宇光电科技有限公司 | Corrosion device for wafers |
| CN107502356A (en) * | 2017-07-14 | 2017-12-22 | 合肥文胜新能源科技有限公司 | A kind of silicon chip surface matte preparation corrosive liquid |
| CN111074280A (en) * | 2019-12-20 | 2020-04-28 | 中建材浚鑫科技有限公司 | Novel alkali polishing process |
| CN111341879A (en) * | 2020-01-07 | 2020-06-26 | 通威太阳能(眉山)有限公司 | Method for manufacturing crystalline silicon solar cell and crystalline silicon solar cell |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN103614778A (en) | Alcohol-free alkaline texturing solution for mono-crystalline silicon wafer, texturing method for mono-crystalline silicon wafer, solar cell and manufacturing method for solar cell | |
| CN102115915B (en) | Single crystal silicon texture-making additive and single crystal silicon texture-making technology | |
| CN104746146A (en) | Monocrystalline silicon slice texturing method | |
| CN104562211B (en) | A kind of etching method for lifting single crystal battery conversion efficiency | |
| CN102154711A (en) | Monocrystal silicon cleaning liquid and precleaning process | |
| CN108565316A (en) | A kind of fine-hair maring using monocrystalline silicon slice method | |
| CN105405755B (en) | For the acid Woolen-making liquid of silicon chip pyramid making herbs into wool, etching method and the silicon chip made of the etching method making herbs into wool | |
| CN103441182B (en) | The matte processing method of solar cell and solar cell | |
| CN103938276A (en) | Monocrystalline silicon wafer texturing additive, texturing solution and corresponding texturing method | |
| CN102222721B (en) | Crystal system silicon solar cell manufacturing method | |
| CN102270702A (en) | Rework process for texturing white spot monocrystalline silicon wafer | |
| CN103700733A (en) | Cleaning treatment method of N-type crystalline silicon substrate of solar cell | |
| CN113035690B (en) | Method for cleaning indium phosphide wafer | |
| CN107523881A (en) | A kind of preprocess method for preparing monocrystalline silicon suede | |
| CN106098810A (en) | A kind of preparation method of crystal silicon solar energy battery suede structure | |
| CN110993724A (en) | Texturing and cleaning method for heterojunction solar cell | |
| CN104900759A (en) | Basic etching back-polishing process for crystalline silicon battery | |
| CN103606595B (en) | The recycling of the rear defective Monocrystalline silicon cell piece of sintering and grid line recovery method thereof | |
| CN112458540A (en) | Solar single crystal texturing process | |
| CN103378212A (en) | Texturing method for solar cell | |
| CN114122195A (en) | Cleaning process for winding-plated polycrystalline silicon | |
| CN109267154A (en) | Buddha's warrior attendant wire cutting monocrystalline silicon surface etching method | |
| CN107393818A (en) | A kind of secondary etching method of the soda acid of polysilicon solar cell and its polysilicon | |
| CN102867880A (en) | Method for preparing double acid etching textures on polycrystalline silicon surface | |
| CN102412338B (en) | Polycrystalline silicon optical mask flocking process |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20150701 |
|
| RJ01 | Rejection of invention patent application after publication |