CN101409312A - Method for fine-hair maring using monocrystalline silicon slice - Google Patents

Method for fine-hair maring using monocrystalline silicon slice Download PDF

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Publication number
CN101409312A
CN101409312A CNA2008101706721A CN200810170672A CN101409312A CN 101409312 A CN101409312 A CN 101409312A CN A2008101706721 A CNA2008101706721 A CN A2008101706721A CN 200810170672 A CN200810170672 A CN 200810170672A CN 101409312 A CN101409312 A CN 101409312A
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monocrystalline silicon
silicon wafer
wool
passivation
making herbs
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CN101409312B (en
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林海峰
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Risen Luoyang New Energy Co ltd
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NINGHAI RISEN ELECTRIC CO Ltd
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    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02PCLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
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    • Y02P70/50Manufacturing or production processes characterised by the final manufactured product

Abstract

The invention discloses a method for texturing a monocrystalline silicon wafer. The method comprises the steps of texturing by corrosion, passivation and deionization. By the technical scheme of cancelling rough polishing, and changing a formula, reaction conditions and treatment flow, the method overcomes the problems and the disadvantages of the prior art that the texturing technological process is difficult to be controlled, the thickness reduction of the monocrystalline silicon wafer is greater, the silicon wafer is easily cracked during the treatment process, the textures formed on the silicon wafer is uneven, and bulky dimension of a cone structure leads to high reflectivity of the silicon wafer, lower short circuit current (Isc) and lower photoelectric conversion rate. The method provided for texturing the monocrystalline silicon wafer realizes that corrosive liquid is in a steady state which is easy to be controlled, the thickness reduction of the silicon wafer is reduced, the formed textures are even and the dimension of the cone structure is compact; the method reaches the purposes of reducing the reflectivity of the silicon wafer, increasing the short circuit current (Isc), and improving the photoelectric conversion rate, meanwhile, the method improves the quality and the qualification rate of the product on the whole, reduces the consumption of chemical reagents and lowers the cost.

Description

A kind of method of fine-hair maring using monocrystalline silicon slice
Technical field
The present invention relates to the manufacture craft of solar battery sheet, specifically be meant the method that is applied in a kind of fine-hair maring using monocrystalline silicon slice of making herbs into wool operation in the monocrystaline silicon solar cell sheet manufacture craft.
Background technology
The making herbs into wool of solar battery sheet, be to produce anisotropic etch at silicon chip surface, form the matte of intensive micro-pyramid pyramid structure, make solar battery sheet reduce light reflectivity to greatest extent by chemical reaction, improve short circuit current (Isc), promptly improve photoelectric conversion efficiency.
The process flow of the making herbs into wool of prior art is thick throwing, making herbs into wool, passivation, removal ion.Its prescription, reaction condition are:
The thick throwing: percentage by weight, NaOH NaOH, 7%, pure water H 2O, 93%, 86 ℃ ± 2 ℃ of temperature, time 2~3min;
Making herbs into wool: percentage by weight, NaOH NaOH, 1.06%, isopropyl alcohol C 3H 3O IPA, 4.24%, sodium metasilicate Na 2SiO 39H 2O, 2.83%, pure water H 2O, wt91.8%, 83 ℃ ± 2 ℃ of temperature, time 20~30min;
Passivation: percentage by weight, hydrofluoric acid HF, 17.3%, pure water H 2O, 82.7%, normal temperature, time 5~10min;
Remove ion: hydrochloric acid HCI, 21%, pure water H 2O, 79%, normal temperature, time 5~10min.
Prior art is inhomogeneous at the matte that wafer forms, and the cone size is greater than 5 μ m, and is bigger than normal; Corrosion thinning speed can reach 5~8 μ m/10min in thick throwing process, is difficult to control, and corrosion thinning speed can reach 3~4 μ m/10min in the making herbs into wool process, instability, and total attenuate amount can reach 18~25 μ m.
Above-mentioned, the technical recipe and the reaction condition of prior art corrosive liquid play pendulum, thereby exist the process for etching process to be difficult to control, monocrystalline silicon piece attenuate amount is bigger, and silicon chip breaks easily in processing procedure, and the matte that wafer forms is inhomogeneous, the cone structure size is thick, cause the wafer reflectivity big, (Isc) is less than normal for short circuit current, the problems and shortcomings that the opto-electronic conversion transfer efficient is lower.
Summary of the invention
Problems and shortcomings at above-mentioned prior art existence, the present invention adopts the thick technical scheme of throwing, changing prescription, reaction condition and handling process of cancellation, a kind of method of fine-hair maring using monocrystalline silicon slice is provided, the stable state that is intended to that corrosive liquid is in and is easy to control, make that the wafer grinding amount is little, the matte that forms evenly, the cone structure size is fine and closely woven, reach and reduce the wafer reflectivity, increase short circuit current (Isc), the purpose of raising commentaries on classics photoelectric conversion efficiency.
The object of the present invention is achieved like this: a kind of method of fine-hair maring using monocrystalline silicon slice comprises corrosion making herbs into wool, passivation, removal ion, wherein:
Described corrosion making herbs into wool is to treat the monocrystalline silicon piece of making herbs into wool after cleaning, to place that filling by percentage by weight is the isopropyl alcohol C of 0.8% analytically pure NaOH NaOH, 5.3% electron level 3H 3O, 1.4% analytically pure sodium metasilicate Na 2SiO 39H 2O, 92.5% pure water H 2In the texturing slot of the Woolen-making liquid that O forms, 88 ℃ ± 2 ℃ liquid temperature, an atmospheric pressure, under the 0.15MPa nitrogen microvesicle stirring condition, corrosion making herbs into wool 25~35min, corrosion forms the operation process of micro-cone structure matte on monocrystalline silicon sheet surface;
Described passivation is, with the monocrystalline silicon piece after the corrosion making herbs into wool, places that to fill by percentage by weight be 17.3% analytically pure hydrofluoric acid HF, 82.7% pure water H 2In the reactive tank of the passivating solution that O forms, be room temperature in liquid temperature, an atmospheric pressure under the 0.15MPa nitrogen microvesicle stirring condition, reacts 5~10min, removes the oxide layer on the monocrystalline silicon sheet surface and forms the Passivation Treatment process of si-h bond;
Described removal ion is, with the monocrystalline silicon piece after the passivation, places that to fill by percentage by weight be 21% analytically pure hydrochloric acid HCl, 79% pure water H 2In the descaling bath of the pickle that O forms, be room temperature in liquid temperature, an atmospheric pressure, under the 0.15MPa nitrogen microvesicle stirring condition, in pickling 5~10min, removal remain in metal ion on the monocrystalline silicon sheet surface in and acid cleaning process.
Technological process is: corrosion making herbs into wool, ion is removed in passivation.
Beneficial effect:
The present invention is by the thick operation of throwing of cancellation tradition, change conventional formulation, reaction condition and handling process, the stable state that corrosive liquid is in be easy to control, corrosion thinning speed is lower than 2~3 μ m/10min, total attenuate amount is reduced to about 5~6.5 μ m, and wafer is not easily broken; The cone structure matte that forms on monocrystalline silicon piece is evenly fine and closely woven, and the cone structure size is desirable micro-" pyramid " shape cone structure less than 2.5 μ m, and reflectivity has improved photoelectric conversion rate less than 15%; Improve quality, the qualification rate of product on the whole, reduced the consumption of chemical reagent, reduced cost.
In sum, the present invention adopts the thick technical scheme of throwing, changing prescription, reaction condition and handling process of cancellation, a kind of method of fine-hair maring using monocrystalline silicon slice is provided, the stable state that has realized that corrosive liquid is in and be easy to control, the matte that makes the wafer grinding amount reduce, form is even, the cone structure size is fine and closely woven, reached and reduced the wafer reflectivity, increase short circuit current (Isc), improved the purpose of photoelectric conversion rate, quality, the qualification rate of product have been improved simultaneously on the whole, reduce the consumption of chemical reagent, reduced cost.
Description of drawings
Fig. 1 is the process flow diagram of the method for a kind of fine-hair maring using monocrystalline silicon slice of the present invention.
Below in conjunction with the embodiment in the accompanying drawing the present invention is described in further detail, but should not be construed as any limitation of the invention.
Embodiment
Consult Fig. 1, the method of a kind of fine-hair maring using monocrystalline silicon slice of the present invention comprises corrosion making herbs into wool, passivation, removal ion, wherein: described corrosion making herbs into wool is, to treat the monocrystalline silicon piece of making herbs into wool after cleaning, place that filling by percentage by weight is the isopropyl alcohol C of 0.8% analytically pure NaOH NaOH, 5.3% electron level 3H 3O, 1.4% analytically pure sodium metasilicate Na 2SiO 39H 2O, 92.5% pure water H 2In the texturing slot of the Woolen-making liquid that O forms, 88 ℃ ± 2 ℃ liquid temperature, an atmospheric pressure, under the 0.15MPa nitrogen microvesicle stirring condition, corrosion making herbs into wool 25~35min, corrosion forms the operation process of micro-cone structure matte on monocrystalline silicon sheet surface; Described passivation is, with the monocrystalline silicon piece after the corrosion making herbs into wool, places that to fill by percentage by weight be 17.3% analytically pure hydrofluoric acid HF, 82.7% pure water H 2In the reactive tank of the passivating solution that O forms, be room temperature in liquid temperature, an atmospheric pressure under the 0.15MPa nitrogen microvesicle stirring condition, reacts 5~10min, removes the oxide layer on the monocrystalline silicon sheet surface and forms the Passivation Treatment process of si-h bond; Described removal ion is, with the monocrystalline silicon piece after the passivation, places that to fill by percentage by weight be 21% analytically pure hydrochloric acid HCl, 79% pure water H 2In the descaling bath of the pickle that O forms, be room temperature in liquid temperature, an atmospheric pressure, under the 0.15MPa nitrogen microvesicle stirring condition, in pickling 5~10min, removal remain in metal ion on the monocrystalline silicon sheet surface in and acid cleaning process.
Technological process is: corrosion making herbs into wool, ion is removed in passivation.
Beneficial effect:
The present invention is by the thick operation of throwing of cancellation tradition, change conventional formulation, reaction condition and handling process, the stable state that corrosive liquid is in be easy to control, corrosion thinning speed is lower than 2~3 μ m/10min, total attenuate amount is reduced to about 5~6.5 μ m, and wafer is not easily broken; The cone structure matte that forms on monocrystalline silicon piece is evenly fine and closely woven, and the cone structure size is desirable micro-" pyramid " shape cone structure less than 2.5 μ m, and reflectivity has improved photoelectric conversion rate less than 15%; Improve quality, the qualification rate of product on the whole, reduced the consumption of chemical reagent, reduced cost.

Claims (2)

1, a kind of method of fine-hair maring using monocrystalline silicon slice comprises corrosion making herbs into wool, passivation, removal ion, it is characterized in that: described corrosion making herbs into wool is, to treat the monocrystalline silicon piece of making herbs into wool after cleaning, place that filling by percentage by weight is the isopropyl alcohol C of 0.8% analytically pure NaOH NaOH, 5.3% electron level 3H 3O, 1.4% analytically pure sodium metasilicate Na 2SiO 39H 2O, 92.5% pure water H 2In the texturing slot of the Woolen-making liquid that O forms, 88 ℃ ± 2 ℃ liquid temperature, an atmospheric pressure, under the 0.15MPa nitrogen microvesicle stirring condition, corrosion making herbs into wool 25~35min, corrosion forms the operation process of micro-cone structure matte on monocrystalline silicon sheet surface; Described passivation is, with the monocrystalline silicon piece after the corrosion making herbs into wool, places that to fill by percentage by weight be 17.3% analytically pure hydrofluoric acid HF, 82.7% pure water H 2In the reactive tank of the passivating solution that O forms, be room temperature in liquid temperature, an atmospheric pressure under the 0.15MPa nitrogen microvesicle stirring condition, reacts 5~10min, removes the oxide layer on the monocrystalline silicon sheet surface and forms the Passivation Treatment process of si-h bond; Described removal ion is, with the monocrystalline silicon piece after the passivation, places that to fill by percentage by weight be 21% analytically pure hydrochloric acid HCl, 79% pure water H 2In the descaling bath of the pickle that O forms, be room temperature in liquid temperature, an atmospheric pressure, under the 0.15MPa nitrogen microvesicle stirring condition, in pickling 5~10min, removal remain in metal ion on the monocrystalline silicon sheet surface in and acid cleaning process.
2, the method for a kind of fine-hair maring using monocrystalline silicon slice according to claim 1 is characterized in that: described technological process is corrosion making herbs into wool, and ion is removed in passivation.
CN2008101706721A 2008-10-20 2008-10-20 Method for fine-hair maring using monocrystalline silicon slice Expired - Fee Related CN101409312B (en)

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CN101864599A (en) * 2010-05-31 2010-10-20 江西赛维Ldk太阳能高科技有限公司 Preparation method of suede of silicon wafer
CN102108557A (en) * 2011-01-27 2011-06-29 巨力新能源股份有限公司 Method for preparing monocrystalline silicon suede
CN102129979A (en) * 2010-01-14 2011-07-20 台湾积体电路制造股份有限公司 Semiconductor device and its manufacture method
CN102191565A (en) * 2011-04-15 2011-09-21 中节能太阳能科技(镇江)有限公司 Monocrystalline silicon etching solution and application method thereof
CN102214726A (en) * 2010-04-01 2011-10-12 浙江索日光电科技有限公司 Method for treating flocking on surface of solar silicon slice
CN102634851A (en) * 2012-03-26 2012-08-15 北京吉阳技术股份有限公司 Etching method for manufacturing solar cell
CN102745645A (en) * 2012-07-09 2012-10-24 中国科学院半导体研究所 Method for producing octangle micropores on silicon wafer
CN102820370A (en) * 2011-06-08 2012-12-12 北京北方微电子基地设备工艺研究中心有限责任公司 Texture surface making treatment method for silicon wafer
CN102839427A (en) * 2012-08-28 2012-12-26 揭阳中诚集团有限公司 Mono-crystalline silicon piece texturing alcohol-free additives and using method thereof
CN103903960A (en) * 2014-01-10 2014-07-02 浙江晶科能源有限公司 HIT battery front-cleansing method
CN104282796A (en) * 2013-07-02 2015-01-14 江阴江化微电子材料股份有限公司 Silicon wafer texturing solution and preparation method thereof
CN104746146A (en) * 2013-12-25 2015-07-01 新奥光伏能源有限公司 Monocrystalline silicon slice texturing method
CN107502356A (en) * 2017-07-14 2017-12-22 合肥文胜新能源科技有限公司 A kind of silicon chip surface matte preparation corrosive liquid
CN109301032A (en) * 2018-09-28 2019-02-01 横店集团东磁股份有限公司 Monocrystalline silicon surface etching method
CN110491971A (en) * 2019-08-22 2019-11-22 东方环晟光伏(江苏)有限公司 A kind of large scale imbrication battery process for etching
CN114447147A (en) * 2021-12-28 2022-05-06 苏州腾晖光伏技术有限公司 Method for improving texturing yield of silicon wafer for solar cell

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CN102129979A (en) * 2010-01-14 2011-07-20 台湾积体电路制造股份有限公司 Semiconductor device and its manufacture method
CN102214726A (en) * 2010-04-01 2011-10-12 浙江索日光电科技有限公司 Method for treating flocking on surface of solar silicon slice
CN102214726B (en) * 2010-04-01 2013-03-06 索日新能源股份有限公司 Method for treating flocking on surface of solar silicon slice
CN101864599B (en) * 2010-05-31 2012-07-18 江西赛维Ldk太阳能高科技有限公司 Preparation method of suede of silicon wafer
CN101864599A (en) * 2010-05-31 2010-10-20 江西赛维Ldk太阳能高科技有限公司 Preparation method of suede of silicon wafer
CN102108557B (en) * 2011-01-27 2013-02-13 巨力新能源股份有限公司 Method for preparing monocrystalline silicon suede
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CN102191565A (en) * 2011-04-15 2011-09-21 中节能太阳能科技(镇江)有限公司 Monocrystalline silicon etching solution and application method thereof
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CN102820370B (en) * 2011-06-08 2015-01-14 北京北方微电子基地设备工艺研究中心有限责任公司 Texture surface making treatment method for silicon wafer
CN102820370A (en) * 2011-06-08 2012-12-12 北京北方微电子基地设备工艺研究中心有限责任公司 Texture surface making treatment method for silicon wafer
CN102634851A (en) * 2012-03-26 2012-08-15 北京吉阳技术股份有限公司 Etching method for manufacturing solar cell
CN102634851B (en) * 2012-03-26 2016-03-02 北京吉阳技术股份有限公司 A kind of etching method manufactured for solar cell
CN102745645A (en) * 2012-07-09 2012-10-24 中国科学院半导体研究所 Method for producing octangle micropores on silicon wafer
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CN104746146A (en) * 2013-12-25 2015-07-01 新奥光伏能源有限公司 Monocrystalline silicon slice texturing method
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CN107502356A (en) * 2017-07-14 2017-12-22 合肥文胜新能源科技有限公司 A kind of silicon chip surface matte preparation corrosive liquid
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