CN104282796A - Silicon wafer texturing solution and preparation method thereof - Google Patents
Silicon wafer texturing solution and preparation method thereof Download PDFInfo
- Publication number
- CN104282796A CN104282796A CN201310276533.8A CN201310276533A CN104282796A CN 104282796 A CN104282796 A CN 104282796A CN 201310276533 A CN201310276533 A CN 201310276533A CN 104282796 A CN104282796 A CN 104282796A
- Authority
- CN
- China
- Prior art keywords
- parts
- silicon wafer
- potassium hydroxide
- absolute ethyl
- ethyl alcohol
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 25
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 25
- 239000010703 silicon Substances 0.000 title claims abstract description 25
- 238000002360 preparation method Methods 0.000 title claims abstract description 10
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 claims abstract description 54
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 claims abstract description 45
- 150000005846 sugar alcohols Polymers 0.000 claims abstract description 26
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims abstract description 19
- 239000004111 Potassium silicate Substances 0.000 claims abstract description 19
- NNHHDJVEYQHLHG-UHFFFAOYSA-N potassium silicate Chemical compound [K+].[K+].[O-][Si]([O-])=O NNHHDJVEYQHLHG-UHFFFAOYSA-N 0.000 claims abstract description 19
- 229910052913 potassium silicate Inorganic materials 0.000 claims abstract description 19
- 235000019353 potassium silicate Nutrition 0.000 claims abstract description 19
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 14
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 13
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 7
- 238000011085 pressure filtration Methods 0.000 claims abstract description 7
- 238000003860 storage Methods 0.000 claims abstract description 7
- 239000007788 liquid Substances 0.000 claims description 12
- 238000000034 method Methods 0.000 abstract description 8
- 238000006243 chemical reaction Methods 0.000 abstract description 3
- XJKVPKYVPCWHFO-UHFFFAOYSA-N silicon;hydrate Chemical compound O.[Si] XJKVPKYVPCWHFO-UHFFFAOYSA-N 0.000 abstract 1
- 238000005530 etching Methods 0.000 description 6
- 239000012528 membrane Substances 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 5
- 239000000126 substance Substances 0.000 description 5
- 239000000463 material Substances 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000005374 membrane filtration Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 230000001172 regenerating effect Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 239000006117 anti-reflective coating Substances 0.000 description 1
- 230000003667 anti-reflective effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000003912 environmental pollution Methods 0.000 description 1
- 235000008216 herbs Nutrition 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 210000002268 wool Anatomy 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
- H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical Treatment Of Metals (AREA)
- Formation Of Insulating Films (AREA)
Abstract
The invention provides a solution made of a silicon wafer and a preparation method of the solution. The solution made of the silicon wafer comprises, by weight ratio, 5-200 parts of potassium hydroxide, 1-50 parts of isopropanol, 1-20 parts of absolute ethyl alcohol, 1-10 parts of potassium silicate and 0.1 to 10 parts of polyhydric alcohols. The method includes the steps that the potassium hydroxide is dissolved into water in a reaction kettle, the potassium hydroxide solution is cooled, then the isopropanol, the absolute ethyl alcohol, the potassium silicate and the polyhydric alcohols are added sequentially; the isopropanol, the absolute ethyl alcohol, the potassium silicate and the polyhydric alcohols are received by a receiving vessel, wherein the polyhydric alcohols is received finally, pressure maintaining is conducted through nitrogen in the receiving vessel; the solution enters a storage vessel; pressure filtration is conducted through level-by-level films, and a finished product is obtained; By the adoption of the solution, the high-purity solution made of the silicon wafer can be obtained, and thus the effectiveness of the silicon water can be improved.
Description
Technical field
The present invention relates to technical field of semiconductors, particularly relate to a kind of silicon wafer Woolen-making liquid and preparation method thereof.
Background technology
Information age, along with the continuous consumption of the energy, the importance of regenerative resource will be more and more outstanding, as regenerative resources such as solar energy, wind energy, tidal energys.Solar energy as wherein outstanding person is the new forms of energy that current utilance and popularity rate are the highest, its development rapidly unprecedented, and I cross as photovoltaic industry big country of the world to power overflow into, with the electronic chemical product industry that it matches relative backwardness, seriously constrain the superiority development of industrial chain.
Solar cell also claims photovoltaic cell, is the semiconductor device that a kind of luminous energy by solar energy is converted into electric energy.Because it is Green Product, can not cause environmental pollution, and be renewable resource, so under current energy starved situation, solar cell is a kind of novel energy with broad based growth future.
At present, preparation technology's standardization of solar battery sheet, its key step is as follows:
1. making herbs into wool: make the silicon chip surface (comprising front and back) of light originally form scraggly structure to extend the propagation path on its surface by chemical reaction, thus improve solar battery sheet to the absorption efficiency of light.
2. diffusion: P-type silicon sheet after the diffusion surface becomes N-type, forms PN junction, makes silicon chip have photovoltaic effect.The concentration spread, the degree of depth and uniformity directly affect the electrical property of solar battery sheet, and the total amount square resistance diffusing into impurity is weighed, and total impurities is less, and square resistance is larger.
3. periphery etching: the conductive layer saying PN junction two terminal shortcircuit of silicon chip edge formation again when the object of this step is to remove etching system knot.
4. depositing antireflection film: mainly contain two class antireflective coatings at present, silicon nitride film and oxidation titanium film, main antireflective and passivation.
5. print electrode.
6. sinter: make to form alloy between the electrode of printing and silicon chip.
In the main preparation technology of solar battery sheet, process for etching is first step technique, its Main Function is the damage layer removing silicon chip surface, and form good matte on its surface, increase the absorption to light, ensure the techniques such as follow-up diffusion, depositing antireflection film simultaneously, and then ensure the efficiency of solar cell after silk screen sintering.So the bright degree of the size of silicon chip surface after process for etching, form, the uniformity and silicon chip surface has vital impact to the production of whole solar battery sheet and its final conversion efficiency.In prior art, in Woolen-making liquid, the content of metal is higher, thus affects the usefulness of silicon chip.
In view of this, how to design a kind of crystalline silicon etching liquid meeting solar energy process for etching, to improve its purity, thus increasing the usefulness of silicon chip, is the problem that insider needs solution badly.
Summary of the invention
For in prior art, in the silicon wafer Woolen-making liquid of solar battery sheet, the content of metal is comparatively large, can have a strong impact on this defect of usefulness of silicon chip, the invention provides a kind of silicon wafer Woolen-making liquid and preparation method thereof.
According to an aspect of the present invention, provide a kind of silicon wafer Woolen-making liquid, wherein, with parts by weight, comprising:
The potassium hydroxide of 5 ~ 200 parts;
The isopropyl alcohol of 1 ~ 50 part;
The absolute ethyl alcohol of 1 ~ 20 part;
The potassium silicate of 1 ~ 10 part; And
0.1 ~ 10 part of polyalcohol.
Preferably, the potassium hydroxide of 50 ~ 150 parts;
The isopropyl alcohol of 10 ~ 40 parts;
The absolute ethyl alcohol of 5 ~ 15 parts;
The potassium silicate of 3 ~ 7 parts; And
1 ~ 5 part of polyalcohol.
According to another aspect of the present invention, provide a kind of preparation method of above-mentioned silicon wafer Woolen-making liquid, wherein, comprise the following steps:
A described potassium hydroxide is dissolved in water by () in a kettle., and lower the temperature to described potassium hydroxide solution, then adds described isopropyl alcohol, described absolute ethyl alcohol, described potassium silicate and described polyalcohol successively;
Receive described isopropyl alcohol, described absolute ethyl alcohol, described potassium silicate and described polyalcohol in (b) receiving tank, wherein, finally receive described polyalcohol, in described receiving tank, adopt nitrogen to carry out pressurize;
C the solution in () described step (b) enters storage tank; And
D (), by film pressure filtration step by step, obtains goods.
Preferably, in described step (a), by chilled water coil, described potassium hydroxide solution is lowered the temperature.
Advantage of the present invention is: adopt membrane filtration and TCM combination technology.Because of the particularity of chemicals, different membrane materials and membrane aperture tolerance all different, we adopt special membrane material and certain films aperture, and the finely ground particles in chemicals is got rid of in a large number.We also reach international most advanced level to the administrative skill of full processing procedure simultaneously.
Embodiment
Be clearly and completely described the technical scheme in the embodiment of the present invention below, obviously, described embodiment is only the present invention's part embodiment, instead of whole embodiments.Based on the embodiment in the present invention, those of ordinary skill in the art, not making the every other embodiment obtained under creative work prerequisite, belong to the scope of protection of the invention.
Embodiment 1
In a kettle. the potassium hydroxide of 5kg is dissolved in water, and adopt chilled water coil to lower the temperature to potassium hydroxide solution, add 1kg isopropyl alcohol, 1kg absolute ethyl alcohol, 1kg potassium silicate and 0.1kg polyalcohol more successively in reactor, then receive isopropyl alcohol, absolute ethyl alcohol, potassium silicate and polyalcohol by receiving tank, wherein, finally receive polyalcohol, in receiving tank, adopt nitrogen to carry out pressurize, then in the storage tank proceeded to by above-mentioned solution, then by film pressure filtration step by step, goods are obtained.
Embodiment 2
In a kettle. the potassium hydroxide of 200kg is dissolved in water, and adopt chilled water coil to lower the temperature to potassium hydroxide solution, add 50kg isopropyl alcohol, 20kg absolute ethyl alcohol, 10kg potassium silicate and 10kg polyalcohol more successively in reactor, then receive isopropyl alcohol, absolute ethyl alcohol, potassium silicate and polyalcohol by receiving tank, wherein, finally receive polyalcohol, in receiving tank, adopt nitrogen to carry out pressurize, then in the storage tank proceeded to by above-mentioned solution, then by film pressure filtration step by step, goods are obtained.
Embodiment 3
In a kettle. the potassium hydroxide of 50kg is dissolved in water, and adopt chilled water coil to lower the temperature to potassium hydroxide solution, add 40kg isopropyl alcohol, 5kg absolute ethyl alcohol, 7kg potassium silicate and 1kg polyalcohol more successively in reactor, then receive isopropyl alcohol, absolute ethyl alcohol, potassium silicate and polyalcohol by receiving tank, wherein, finally receive polyalcohol, in receiving tank, adopt nitrogen to carry out pressurize, then in the storage tank proceeded to by above-mentioned solution, then by film pressure filtration step by step, goods are obtained.
Embodiment 4
In a kettle. the potassium hydroxide of 150kg is dissolved in water, and adopt chilled water coil to lower the temperature to potassium hydroxide solution, add 10kg isopropyl alcohol, 15kg absolute ethyl alcohol, 3kg potassium silicate and 5kg polyalcohol more successively in reactor, then receive isopropyl alcohol, absolute ethyl alcohol, potassium silicate and polyalcohol by receiving tank, wherein, finally receive polyalcohol, in receiving tank, adopt nitrogen to carry out pressurize, then in the storage tank proceeded to by above-mentioned solution, then by film pressure filtration step by step, goods are obtained.
Advantage of the present invention is: adopt membrane filtration and TCM combination technology.Because of the particularity of chemicals, different membrane materials and membrane aperture tolerance all different, we adopt special membrane material and certain films aperture, and the finely ground particles in chemicals is got rid of in a large number.We also reach international most advanced level to the administrative skill of full processing procedure simultaneously.
More than show and describe general principle of the present invention, principal character and advantage of the present invention.The technical staff of the industry should understand; the present invention is not restricted to the described embodiments; what describe in above-described embodiment and specification just illustrates principle of the present invention; the present invention also has various changes and modifications without departing from the spirit and scope of the present invention, and these changes and improvements all fall in the claimed scope of the invention.Application claims protection range is defined by appending claims and equivalent thereof.
Claims (4)
1. a silicon wafer Woolen-making liquid, is characterized in that, with parts by weight, comprising:
The potassium hydroxide of 5 ~ 200 parts;
The isopropyl alcohol of 1 ~ 50 part;
The absolute ethyl alcohol of 1 ~ 20 part;
The potassium silicate of 1 ~ 10 part; And
0.1 ~ 10 part of polyalcohol.
2. silicon wafer Woolen-making liquid as claimed in claim 1, is characterized in that, with parts by weight, comprising:
The potassium hydroxide of 50 ~ 150 parts;
The isopropyl alcohol of 10 ~ 40 parts;
The absolute ethyl alcohol of 5 ~ 15 parts;
The potassium silicate of 3 ~ 7 parts; And
1 ~ 5 part of polyalcohol.
3. a preparation method for silicon wafer Woolen-making liquid as claimed in claim 1 or 2, is characterized in that, comprise the following steps:
A described potassium hydroxide is dissolved in water by () in a kettle., and lower the temperature to described potassium hydroxide solution, then adds described isopropyl alcohol, described absolute ethyl alcohol, described potassium silicate and described polyalcohol successively;
Receive described isopropyl alcohol, described absolute ethyl alcohol, described potassium silicate and described polyalcohol in (b) receiving tank, wherein, finally receive described polyalcohol, in described receiving tank, adopt nitrogen to carry out pressurize;
C the solution in () described step (b) enters storage tank; And
D (), by film pressure filtration step by step, obtains goods.
4. the preparation method of silicon wafer Woolen-making liquid as claimed in claim 3, is characterized in that, in described step (a), lower the temperature by chilled water coil to described potassium hydroxide solution.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310276533.8A CN104282796B (en) | 2013-07-02 | 2013-07-02 | A kind of silicon wafer Woolen-making liquid and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310276533.8A CN104282796B (en) | 2013-07-02 | 2013-07-02 | A kind of silicon wafer Woolen-making liquid and preparation method thereof |
Publications (2)
| Publication Number | Publication Date |
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| CN104282796A true CN104282796A (en) | 2015-01-14 |
| CN104282796B CN104282796B (en) | 2016-08-31 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107858752A (en) * | 2017-11-03 | 2018-03-30 | 通威太阳能（安徽）有限公司 | A kind of crystal silicon Woolen-making liquid and preparation method thereof |
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|---|---|---|---|---|
| US4137123A (en) * | 1975-12-31 | 1979-01-30 | Motorola, Inc. | Texture etching of silicon: method |
| EP0477424A1 (en) * | 1990-09-28 | 1992-04-01 | Siemens Solar GmbH | Wet chemical etching to produce structured surfaces of silicon |
| CN101323955A (en) * | 2008-02-27 | 2008-12-17 | 苏州苏电微电子信息化学品研发中心有限公司 | Wool-making agent for monocrystalline silicon solar cell surface treatment and manufacturing method thereof |
| CN101409312A (en) * | 2008-10-20 | 2009-04-15 | 宁海县日升电器有限公司 | Method for fine-hair maring using monocrystalline silicon slice |
| CN101661974A (en) * | 2009-09-03 | 2010-03-03 | 无锡尚品太阳能电力科技有限公司 | Woolen-making liquid in a solar battery and production method thereof |
| JP2010141139A (en) * | 2008-12-11 | 2010-06-24 | Shinryo Corp | Etchant for silicon substrate, and surface processing method for silicon substrate |
| CN102115915A (en) * | 2010-12-31 | 2011-07-06 | 百力达太阳能股份有限公司 | Single crystal silicon texture-making additive and single crystal silicon texture-making technology |
| CN102277574A (en) * | 2011-08-15 | 2011-12-14 | 英利能源（中国）有限公司 | Monocrystalline silicon solar cell, etching liquid thereof, texturing method, preparation method and photovoltaic component |
| CN102315113A (en) * | 2011-10-20 | 2012-01-11 | 天津理工大学 | Solar-battery monocrystalline-silicon floss-making fluid with low volatility and application thereof |
-
2013
- 2013-07-02 CN CN201310276533.8A patent/CN104282796B/en active Active
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4137123A (en) * | 1975-12-31 | 1979-01-30 | Motorola, Inc. | Texture etching of silicon: method |
| EP0477424A1 (en) * | 1990-09-28 | 1992-04-01 | Siemens Solar GmbH | Wet chemical etching to produce structured surfaces of silicon |
| CN101323955A (en) * | 2008-02-27 | 2008-12-17 | 苏州苏电微电子信息化学品研发中心有限公司 | Wool-making agent for monocrystalline silicon solar cell surface treatment and manufacturing method thereof |
| CN101409312A (en) * | 2008-10-20 | 2009-04-15 | 宁海县日升电器有限公司 | Method for fine-hair maring using monocrystalline silicon slice |
| JP2010141139A (en) * | 2008-12-11 | 2010-06-24 | Shinryo Corp | Etchant for silicon substrate, and surface processing method for silicon substrate |
| CN101661974A (en) * | 2009-09-03 | 2010-03-03 | 无锡尚品太阳能电力科技有限公司 | Woolen-making liquid in a solar battery and production method thereof |
| CN102115915A (en) * | 2010-12-31 | 2011-07-06 | 百力达太阳能股份有限公司 | Single crystal silicon texture-making additive and single crystal silicon texture-making technology |
| CN102277574A (en) * | 2011-08-15 | 2011-12-14 | 英利能源（中国）有限公司 | Monocrystalline silicon solar cell, etching liquid thereof, texturing method, preparation method and photovoltaic component |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN107858752A (en) * | 2017-11-03 | 2018-03-30 | 通威太阳能（安徽）有限公司 | A kind of crystal silicon Woolen-making liquid and preparation method thereof |
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| Publication number | Publication date |
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| CN104282796B (en) | 2016-08-31 |
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