CN202189816U - Device for etching surface of solar silicon wafer and structure of solar silicon wafer - Google Patents
Device for etching surface of solar silicon wafer and structure of solar silicon wafer Download PDFInfo
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- CN202189816U CN202189816U CN2011202613670U CN201120261367U CN202189816U CN 202189816 U CN202189816 U CN 202189816U CN 2011202613670 U CN2011202613670 U CN 2011202613670U CN 201120261367 U CN201120261367 U CN 201120261367U CN 202189816 U CN202189816 U CN 202189816U
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- solar silicon
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- silicon wafer
- zoneofoxidation
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
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Abstract
The utility model discloses a device for etching the surface of a solar silicon wafer and a structure of the solar silicon wafer. The device comprises a container for dipping the solar silicon wafer, wherein acid solution and mixed solution of a metal compound with the chemical activity lower than that of silicon are filled in the container; at least one surface of the solar silicon wafer is in contact with the mixed solution; a chemical displacement reaction is formed by the metal compound in the mixed solution and the surface of the solar silicon wafer, so that a plurality of metal ions are uniformly adhered on the surface of the solar silicon wafer, an oxidation area is formed on the adhered surface of the solar silicon wafer and is eroded by the acid solution, thereby forming a plurality of pits with recessed surfaces. When the structure is applied to a solar cell, the ratio of secondary sunlight incidence can be increased so as to achieve the purpose of improving antireflection. The structure can be formed by using a dipping mode and the chemical displacement reaction, therefore, the complexity of the processing technique is greatly reduced, the manufacturing cost is lowered, and the pits can be controlled to be uniformly laid on the surface of the solar silicon wafer.
Description
Technical field
The utility model relates to the structure of a kind of solar silicon wafers Etaching device and solar silicon wafers; Its purpose is; A kind of chemical property of utilizing chemical replacement to react to change silicon metal is provided, can be easily and form fast and have the solar silicon wafers Etaching device of several depressions and the structure of solar silicon wafers thereof.
Background technology
Because the human at present main various energy sourceses that rely on; Like uranium, natural gas and oil etc.; Within following many decades, will use totally, scientist has dropped into a large amount of mental and physical efforts and fund, is used to develop the application of alternative energy source; Like solar energy, wind-force, wave power and underground heat, and all obtain good achievement.But it is restricted that the utilization of wind-force, wave power and underground heat all has its region, must just can use at some environment, and like volcanic region or seashore limit, and its employed equipment is huge, like the water intaking pipeline of windmill and deep sea water.Therefore, the consistent application of having an optimistic view of solar energy of scientist, and drop into the relevant conversion equipment of a large amount of manpower development, i.e. solar cell.
Each research unit utilizes various materials and utilizes various skilled worker's technologies to manufacture solar cell in the world at present, and the photoelectric conversion efficiency of resulting solar cell and being not quite similar; In addition, the material of solar cell can be divided into monocrystalline silicon, polysilicon, amorphous silicon; Three or five families comprise that moaning transferred, phosphatization is pluged with molten metal, phosphatization is transferred and pluged with molten metal; Two or six families comprise cadmium telluride, copper indium diselenide etc.And the highest photoelectric transformation efficiency is respectively at present: monocrystalline silicon 24.7%, polysilicon 19.8%, non-crystalline silicon 14.5%, GaAs 25.7%, copper indium diselenide 18.8%.Generally speaking, oneself can reach the photoelectric conversion efficiency of the solar cell of laboratory stage more than 30%, but the solar cell in the volume production stage of being sold on the market, and its photoelectric conversion efficiency generally is lower than 20%, still has further improved space.And relatively descend the dual of cost and photoelectric conversion efficiency; At present with the application of silicon metal more (comprising monocrystalline silicon and polysilicon); But in the application of some lower-orders; Like solar calculator or solar energy wrist-watch, then use the material of lower but the amorphous silicon that price is more cheap of photoelectric conversion efficiency as solar cell.
In addition because the overall price of solar cell is too high, and the solar silicon wafers cost to account for the total cost of solar cell over half.Therefore, scientist need try every possible means to improve the photoelectric conversion efficiency of solar cell with exhausting one's ability, and the processing technology of seeking effectively to reduce cost, to improve the practicality of solar cell.At present, scientist's method of improving the photoelectric conversion efficiency of solar cell provide light absorption area (as utilize silicon nanowires as with the material of incident photon reaction) or increase the quantity (as anti-reflecting layer is set or forms rough surface and increase reflectivity) of incident photon.But the processing procedure of silicon nanowires is numerous and diverse, and needs to use metal solvent to promote the growth of silicon nanowires.The not only extra increase cost of these metal solvents, and for silicon nanowires, these metal solvents are impurity and can hinder the transmission of electronics in silicon nanowires, influence the photoelectric conversion efficiency of solar cell.In addition, anti-reflecting layer is set utilizes complicated light shield and etch process that the surface etching of solar silicon wafers is become the triangle taper, and utilize the vapor deposition mode at triangle taper surface coated anti-reflecting layer.And these technologies all can increase the price of solar cell and reduce its production efficiency, are unfavorable for producing to increase its occupation rate of market in a large number.
Moreover; Form rough surface wet etching capable of using or the etching of dry ecthing mode; Wherein, the wet etching public good is generally used chemical agent (for example acid medicine), with the surface etching one-tenth pothole one by one of solar silicon wafers; Several potholes have increased the surface area of solar silicon wafers, and then have increased the quantity of incident photon; And this wet etching process only can form micron-sized depression, and can't form nanoscale; In addition; Modes such as said dry etching process that is use light shield make public, development, etching; Surface at solar silicon wafers forms pothole one by one, though the figure of light shield capable of using is controlled the size (for example can form micron order or nano level pothole) of pothole, its technology is comparatively numerous and diverse; And need to make the higher light shield of precision, cost is higher.
The utility model content
The purpose of the utility model is to overcome the defective that exists in the prior art; A kind of chemical property of utilizing chemical replacement to react to change silicon metal is provided, can be easily and form fast and have the solar silicon wafers Etaching device of several depressions and the structure of solar silicon wafers.
For realizing above-mentioned purpose; The technical scheme of the utility model has provided a kind of solar silicon wafers surface etching device; It is characterized in that said device comprises the container that soaks solar silicon wafers, the mixed solution that acid solution and chemism are lower than the metallic compound of silicon is housed in said container; Said solar silicon wafers contacts with at least one surface of said mixed solution; Metallic compound in the said mixed solution and solar silicon wafers surface form the chemical replacement reaction; Make the surface of said solar silicon wafers evenly be attached with several metallic atoms; And said solar silicon wafers be attached the surface and form zoneofoxidation, said zoneofoxidation receives the erosion of acid solution, and then forms several recessed depressions in the surface.
As optimized technical scheme, described acid solution is a hydrofluoric acid, and described metallic compound is a copper nitrate, is copper and be attached to the surperficial metallic atom of solar silicon wafers.
As optimized technical scheme, described Etaching device also is provided with in order to fixing said solar silicon wafers, and the fixation kit that said solar silicon wafers is contacted with said acid solution.
Further optimized technical scheme is that said fixation kit is provided with at least one suction nozzle.
Further optimized technical scheme can also be that said fixation kit is anchor clamps.
As optimized technical scheme, said zoneofoxidation by solar silicon wafers through oxidation the zone of formation silicon dioxide.
The technical scheme of the utility model also provides a kind of structure of solar silicon wafers; Be formed with the zoneofoxidation that metallic compound in several and the acid solution forms the chemical replacement reaction on the surface of said solar silicon wafers; Each zoneofoxidation and then receive the etching of acid solution, and then form several recessed depressions in the surface.
As optimized technical scheme, said acid solution is a hydrofluoric acid, and said metallic compound is a copper nitrate.
Further optimized technical scheme is that said each zoneofoxidation is attached with by metallic compound through formed several copper atoms of oxidation.
As optimized technical scheme, said zoneofoxidation is that solar silicon wafers is through the formed silicon dioxide region of oxidation.
The advantage and the beneficial effect of the utility model are:
When 1, this solar silicon wafers etch structures is applied in the solar cell, can increase the ratio of sunlight secondary incident, strengthen antireflecting purpose, and then improve the photoelectric conversion efficiency of solar cell.
2, compare with the existing solar silicon wafers production method gold-tinted processing technologys such as going up photoresistance, exposure and etching of need arranging in pairs or groups, the utility model only reacts and can be shaped with immersion way and chemical replacement, greatly reduces the complexity and the cost of manufacture of processing procedure.
3, the utility model utilizes solar silicon wafers to be soaked in the mode in the container, and the said depression of may command evenly is laid on the surface of said solar silicon wafers.
Description of drawings
Fig. 1 is the structural representation of container and mixed solution in the utility model;
Fig. 2 is the structural representation of solar silicon wafers Etaching device in the utility model;
Fig. 3 is soaked in the structural representation in the container for solar silicon wafers in the utility model;
The structural representation that Fig. 4 carries out the chemical replacement reaction for solar silicon wafers surface metallizing thing in the utility model;
Fig. 5 is the structural representation that the solar silicon wafers surface forms several depressions in the utility model;
Fig. 6 is the structural perspective of solar silicon wafers etch structures in the utility model.
Among the figure: 1, Etaching device; 11, container 111, acid solution; 112, metallic compound; 113, mixed solution; 12, fixation kit; 131, zoneofoxidation; 13, solar silicon wafers; 21, metallic atom; 3, solar silicon wafers etch structures; 31, depression.
[embodiment
Below in conjunction with accompanying drawing and embodiment, the embodiment of the utility model is further described.Following examples only are used for more clearly explaining the technical scheme of the utility model, and can not limit the protection range of the utility model with this.
Like Fig. 1, shown in Figure 2; The structure of the utility model solar silicon wafers Etaching device and solar silicon wafers; This Etaching device 1 includes a container 11 at least, and the mixed solution 113 of acid solution 111 and the chemism metallic compound 112 low than silicon is housed in container 11; Fixation kit 12, this fixation kit 12 are located at these container 11 tops and are fixed with at least one solar silicon wafers 13; Have a slice solar silicon wafers 13 at least, this solar silicon wafers 13 is fixed on the fixation kit 12, and receives the start of this fixation kit 12 and move towards container 11, and this solar silicon wafers 13 is contacted with this mixed solution 113, and is as shown in Figure 3; Certainly, this fixation kit can be provided with at least one suction nozzle, and this suction nozzle fixes solar silicon wafers with the vacsorb mode, or can come this solar silicon wafers of gripping for clamp structure; Make solar silicon wafers 13 surfaces be formed with the zoneofoxidation 131 that metallic compound in several and the acid solution forms the chemical replacement reaction; Each zoneofoxidation 131 and then receive the erosion of acid solution; And then form several recessed depressions in the surface 31; Accomplish this solar silicon wafers etch structures 3 with oneself, as shown in Figure 6.
Wherein, contain in this mixed solution 113 acid solution (hydrofluoric acid for example, HF) and the chemism metallic compound low than silicon, the compound of IB group 4 transition metal for example, and in the present embodiment with copper nitrate (AgNO
3) be good, wherein be soaked in this mixed solution 113 on a surface and work as solar silicon wafers 1, this solar silicon wafers 13 carries out following reactions step with this mixed solution 113:
Metallic compound (copper nitrate, AgNO in A, this mixed solution
3) form chemical replacement reaction with this solar silicon wafers, that is this solar silicon wafers carries out oxidation, and this copper nitrate (AgNO
3) carry out reduction, its reactive chemistry formula is following:
AgNO
3+e
-→Ag↓+NO
3
B, this copper nitrate (AgNO
3) carry out the surface that former 21 (they being copper atom) of formed several metals of reduction then evenly are attached to solar silicon wafers 13, and as shown in Figure 4;
C and this solar silicon wafers 13 is attached surface also form several zoneofoxidations 131, and this zoneofoxidation 131 is solar silicon wafers and carries out formed silicon dioxide (SiO after the oxidation
2);
D, each zoneofoxidation 131 are for losing the formed silicon dioxide (SiO of monovalence electronics
2) it receives the corrosion function of hydrofluoric acid easily and dissolves removal;
After E, each zoneofoxidation 131 dissolving are removed, then form several recessed depressions in the surface 31, then form solar silicon wafers etch structures 3, like Fig. 5 and shown in Figure 6 in these solar silicon wafers 13 surfaces.
The utility model and existing Etaching device or etch structures have advantage:
When 1, this solar silicon wafers etch structures is applied in the solar cell, can increase the ratio of sunlight secondary incident, strengthen antireflecting purpose, and then improve the photoelectric conversion efficiency of solar cell.
2, compare with gold-tinted technologies such as having production method to arrange in pairs or groups to go up photoresistance, exposure and etching, the utility model only adopts immersion way and chemical replacement to react and can be shaped, and greatly reduces the complexity and the cost of manufacture of production technology.
3, the utility model utilizes solar silicon wafers to be soaked in the mode in the container, and this depression of may command evenly is layed in the surface of this solar silicon wafers.
The above only is the preferred implementation of the utility model; Should be understood that; For those skilled in the art; Under the prerequisite that does not break away from the utility model know-why, can also make some improvement and retouching, these improvement and retouching also should be regarded as the protection range of the utility model.
Claims (10)
1. a solar silicon wafers surface etching device is characterized in that, said device comprises the container that soaks the silicon solar silicon chip, and the mixed solution that acid solution and chemism are lower than the metallic compound of silicon is housed in said container; Said solar silicon wafers contacts with at least one surface of said mixed solution; Metallic compound in the said mixed solution and solar silicon wafers surface form the chemical replacement reaction; Make the surface of said solar silicon wafers evenly be attached with several metallic atoms; And said solar silicon wafers be attached the surface and form zoneofoxidation, said zoneofoxidation receives the erosion of acid solution, and then forms several recessed depressions in the surface.
2. solar silicon wafers surface etching device as claimed in claim 1 is characterized in that described acid solution is a hydrofluoric acid, and described metallic compound is a copper nitrate, is copper and be attached to the surperficial metallic atom of solar silicon wafers.
3. solar silicon wafers surface etching device as claimed in claim 1 is characterized in that, described Etaching device also is provided with in order to fixing said solar silicon wafers, and the fixation kit that said solar silicon wafers is contacted with said acid solution.
4. solar silicon wafers surface etching device as claimed in claim 3 is characterized in that said fixation kit is provided with at least one suction nozzle.
5. solar silicon wafers surface etching device as claimed in claim 3 is characterized in that said fixation kit is anchor clamps.
6. solar silicon wafers surface etching device as claimed in claim 1 is characterized in that, said zoneofoxidation by solar silicon wafers through oxidation the zone of formation silicon dioxide.
7. the structure of a solar silicon wafers; It is characterized in that; Be formed with the zoneofoxidation that metallic compound in several and the acid solution forms the chemical replacement reaction on the surface of said solar silicon wafers, each zoneofoxidation receives the etching of acid solution, and then forms several recessed depressions in the surface.
8. the structure of solar silicon wafers as claimed in claim 7 is characterized in that, said acid solution is a hydrofluoric acid, and said metallic compound is a copper nitrate.
9. the structure of solar silicon wafers as claimed in claim 8 is characterized in that, said each zoneofoxidation is attached with by metallic compound through formed several copper atoms of oxidation.
10. the structure of solar silicon wafers as claimed in claim 7 is characterized in that, said zoneofoxidation is that solar silicon wafers is through the formed silicon dioxide region of oxidation.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011202613670U CN202189816U (en) | 2011-07-22 | 2011-07-22 | Device for etching surface of solar silicon wafer and structure of solar silicon wafer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011202613670U CN202189816U (en) | 2011-07-22 | 2011-07-22 | Device for etching surface of solar silicon wafer and structure of solar silicon wafer |
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| Publication Number | Publication Date |
|---|---|
| CN202189816U true CN202189816U (en) | 2012-04-11 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2011202613670U Expired - Fee Related CN202189816U (en) | 2011-07-22 | 2011-07-22 | Device for etching surface of solar silicon wafer and structure of solar silicon wafer |
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| CN (1) | CN202189816U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2016019767A1 (en) * | 2014-08-06 | 2016-02-11 | 中国科学院物理研究所 | Acidic texturing solution for etching solar cell silicon wafer, texturing method, solar cell and manufacturing method for solar cell |
| CN105405755A (en) * | 2015-10-30 | 2016-03-16 | 中国科学院物理研究所 | Acidic texturing liquid for silicon wafer pyramid texturing, texturing method and silicon wafer formed in texturing manner through adoption of texturing method |
-
2011
- 2011-07-22 CN CN2011202613670U patent/CN202189816U/en not_active Expired - Fee Related
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2016019767A1 (en) * | 2014-08-06 | 2016-02-11 | 中国科学院物理研究所 | Acidic texturing solution for etching solar cell silicon wafer, texturing method, solar cell and manufacturing method for solar cell |
| CN105405755A (en) * | 2015-10-30 | 2016-03-16 | 中国科学院物理研究所 | Acidic texturing liquid for silicon wafer pyramid texturing, texturing method and silicon wafer formed in texturing manner through adoption of texturing method |
| CN105405755B (en) * | 2015-10-30 | 2018-11-06 | 深圳市石金科技股份有限公司 | For the acid Woolen-making liquid of silicon chip pyramid making herbs into wool, etching method and the silicon chip made of the etching method making herbs into wool |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C56 | Change in the name or address of the patentee |
Owner name: JIANGSU AIDUO PHOTOVOLTAIC TECHNOLOGY CO., LTD. Free format text: FORMER NAME: JIANGYIN AIDUO PV TECHNOLOGY CO., LTD. |
|
| CP01 | Change in the name or title of a patent holder |
Address after: 214423, Jiangsu Jiangyin Town, Zhouzhuang Province Industrial Zone North Central Road Patentee after: Jiangsu Aiduo Photovoltaic Technology Co., Ltd. Address before: 214423, Jiangsu Jiangyin Town, Zhouzhuang Province Industrial Zone North Central Road Patentee before: Jiangyin Aiduo PV Technology Co., Ltd. |
|
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20120411 Termination date: 20170722 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |