CN102337595B - Small-texture monocrystal silicon solar cell texture-manufacturing promoter and application thereof - Google Patents
Small-texture monocrystal silicon solar cell texture-manufacturing promoter and application thereof Download PDFInfo
- Publication number
- CN102337595B CN102337595B CN201110098689.2A CN201110098689A CN102337595B CN 102337595 B CN102337595 B CN 102337595B CN 201110098689 A CN201110098689 A CN 201110098689A CN 102337595 B CN102337595 B CN 102337595B
- Authority
- CN
- China
- Prior art keywords
- texture
- promotor
- application
- promoter
- solar cells
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Landscapes
- Photovoltaic Devices (AREA)
Abstract
The invention relates to a small-texture monocrystal silicon solar cell texture-manufacturing promoter and an application thereof. The promoter comprises components of, by weight: 0.01 to 5% of methyl pyruvate, 0.01 to 5% of vitamin C, 0.01 to 3% of oxalic acid, 0.01 to 5% of lactic acid, 0.1 to 2% of isopropyl alcohol, and 0.1 to 2% of alkali. The promoter is added into a monocrystal texture-manufacturing tank containing a mixed solution of alkali and isopropamide (IPA); the temperature in the texture-manufacturing tank is controlled at 80 DEG C; the mixture is well-mixed; and monocrystal silicon chips are immersed into the texture-manufacturing tank for carrying out a reaction. Compared to prior arts, with the promoter provided by the invention, the sizes of the surface textures of a monocrystal silicon solar cell are basically controlled within 1 to 5mun, such that stability and consistency of monocrystal silicon texture-manufacturing technology are improved.
Description
Technical field
The present invention relates to the leather producing process in single crystal silicon solar cell processing procedure, especially relate to a kind of little textured mono-crystalline silicon etching solar cells promotor and application thereof.
Background technology
The current further deterioration along with climatope and the finiteness of conventional energy resources, a lot of countries have started the upsurge that develops renewable energy source in the world, wherein heliotechnics is as a representative of these class new forms of energy, be subject to the extensive concern of various countries scientific and technological circle, economical circles, also impel heliotechnics to obtain development fast, the utilization that wherein utilizes semi-conductive photovoltaic effect to change sun power into electric energy is more and more extensive.And single crystal silicon solar cell is exactly the device that to be wherein the most generally used to solar energy converting be electric energy.In the preparation process of single crystal silicon solar cell, mainly comprise the following steps: (1) chemical reduction, making herbs into wool and cleaning; (2) PN junction is prepared in diffusion; (3) etching trimming and cleaning; (4) prepare antireflective coating; (5) screen printing electrode sintering; (6) battery testing sorting.By this six step process process, the solar cell of having prepared based single crystal silicon crystal will form, and then, by encapsulation technology, monolithic crystal silicon cell will be combined into assembly, carry out the application of photovoltaic generation.
Wherein the first step technique is mainly making herbs into wool, the Main Function of making herbs into wool is to form at monocrystalline silicon surface the fluctuating that is similar to " pyramid " shape, by these classes " pyramid " structure, reduces the reflectivity of silicon chip surface, improve the absorption of light, thereby improve the transformation efficiency of battery; On the other hand, in making herbs into wool process, can carry out to silicon chip surface the etching of certain depth, (general control is in each 5um left and right of pros and cons to remove surperficial silicon atom layer, clearance-" etching weight/original silicon chip weight "-be controlled at 5-8%), the silicon atom layer of this layer of removal is the cutting damage layer that silicon chip forms in cutting process, for battery surface is compound, have a significant impact, after removal, for improving battery efficiency tool, have very important significance.And the chemical using in current making herbs into wool operation is mainly alkaline corrosion liquid, be specially: NaOH or KOH (concentration range is mass ratio 1-5%), Virahol or ethanol (concentration range is volume ratio 2%-6%), water glass (0.1%-3%), deionized water etc.Utilization is silicon single crystal (111) crystal orientation and the different erosion rate in (100) crystal orientation during compared with low alkaline concentration, prepares the structure of class " pyramid ".
In monocrystalline making herbs into wool process, main chemical reaction is as follows:
Wherein NaOH is main etching reagent, and the Virahol adding (IPA) or ethanol (AL) can reduce silicon chip and liquid interfacial tension, is conducive to eliminate the bubble that interface forms; In order to guarantee the effect (control speed of reaction) of making herbs into wool, the Temperature Setting scope of general wool making liquor is 70-85 ℃.Traditional wool making liquor (the NaOH/Na of current employing
2siO
3/ IPA (AL)) its making herbs into wool effect controllability is poor, and prepared matte is bigger than normal, more than substantially can reaching 5um.
Summary of the invention
Object of the present invention is exactly to provide a kind of technology stability and conforming little textured mono-crystalline silicon etching solar cells promotor and application thereof that has improved monocrystalline making herbs into wool in order to overcome the defect of above-mentioned prior art existence.
Object of the present invention can be achieved through the following technical solutions:
A little textured mono-crystalline silicon etching solar cells promotor, is characterized in that, this promotor comprises following component and weight percent content:
Described alkali is NaOH or KOH.
The conductive resistance of described deionized water is more than 18M Ω.
A kind of application of little textured mono-crystalline silicon etching solar cells promotor, it is characterized in that, in the monocrystalline texturing slot that promotor joining contained to alkali and Isopropylamine (IPA) mixing solutions, the temperature of controlling texturing slot is controlled at 80 ℃, after stirring, monocrystalline silicon piece is soaked in texturing slot and is reacted, and the making herbs into wool time is controlled at 900-1200s.
Described promotor and the volume ratio of mixing solutions are 1: 1000-1: 2000.
Alkali in described mixing solutions is NaOH or KOH, and concentration is 1-1.5wt%.
The concentration of the Isopropylamine in described mixing solutions is 1-3wt%.
Compared with prior art, the present invention can make the matte size basic controlling on single crystal silicon solar cell surface within 1-5um, has improved technology stability and the consistence of monocrystalline making herbs into wool.
Accompanying drawing explanation
Fig. 1 is the electron scanning micrograph of matte in embodiment 4;
Fig. 2 is the light micrograph of matte in embodiment 4;
Fig. 3 is monocrystalline silicon sheet surface reflectance map after the making herbs into wool of embodiment 4.
Embodiment
Below in conjunction with the drawings and specific embodiments, the present invention is described in detail.
Embodiment 1
Accelerator ratio is pyruvic acid formicester content 0.05%, Vitamin C content 0.1%, and oxalic acid content 1%, lactic acid content 0.3%, isopropanol content 1%, NaOH content is 2.0%, all the other are deionized water.According to the 50ml promotor of above-mentioned recipe configuration, join in the monocrystalline texturing slot of 100L, in texturing slot, having configured NaOH content is 1.2%, IPA content is 2%, after mixing, texturing slot temperature is controlled at 80 ℃, after stirring, monocrystalline silicon piece is soaked in texturing slot and is reacted, the making herbs into wool time is controlled at 900 seconds, and obtaining matte pyramid mean sizes is 5um left and right.
Embodiment 2
Accelerator ratio is pyruvic acid formicester content 0.1%, Vitamin C content 0.5%, and oxalic acid content 1%, lactic acid content 0.1%, isopropanol content 1%, NaOH content 1.0%, all the other are deionized water.According to the 50ml promotor of above-mentioned recipe configuration, join in the monocrystalline texturing slot of 100L, in texturing slot, having configured NaOH content is 1.2%, IPA content is 2%, after mixing, texturing slot temperature is controlled at 80 ℃, after stirring, monocrystalline silicon piece is soaked in texturing slot and is reacted, the making herbs into wool time is controlled at 1200 seconds, and obtaining matte pyramid mean sizes is 4um left and right.
Embodiment 3
Accelerator ratio is Pyruvic Acid Methyl ester content 0.2%, Vitamin C content 0.8%, and oxalic acid content 1%, lactic acid content 0.05%, isopropanol content 1%, NaOH content is 1%, all the other are deionized water.According to the 50ml promotor of above-mentioned recipe configuration, join in the monocrystalline texturing slot of 100L, in texturing slot, having configured NaOH content is 1.2%, IPA content is 2%, after mixing, texturing slot temperature is controlled at 80 ℃, after stirring, monocrystalline silicon piece is soaked in texturing slot and is reacted, the making herbs into wool time is controlled at 1200 seconds, and obtaining matte pyramid mean sizes is 3um left and right.
Enforcement case 4
Accelerator ratio is Pyruvic Acid Methyl ester content 0.5%, Vitamin C content 2%, and oxalic acid content 1%, lactic acid content 0.01%, isopropanol content 1%, NaOH content is 0.5%, all the other are deionized water.According to the 50ml promotor of above-mentioned recipe configuration, join in the monocrystalline texturing slot of 100L, in texturing slot, having configured NaOH content is 1.2%, IPA content is 2%, after mixing, texturing slot temperature is controlled at 80 ℃, after stirring, monocrystalline silicon piece is soaked in texturing slot and is reacted, the making herbs into wool time is controlled at 1200 seconds, and obtaining matte pyramid mean sizes is 2um left and right.
Adopt the promotor of above-mentioned several formulas, can control preferably the pyramidal size of monocrystalline silicon suede, acquisition good uniformity, the suede structure that density is high; The etching attenuate weight of monocrystalline silicon piece is stable, can be controlled at 5-8%; Silicon chip appearance luster homogeneous, average reflectance, lower than 14%, meets industrial demand.Fig. 1 is the electron scanning micrograph of matte in embodiment 4, the size average out to 2um of " pyramid ".Fig. 2 is the light micrograph of matte in embodiment 4, and size and the scanning electron microscope of " pyramid " come to the same thing.Fig. 3 is monocrystalline silicon sheet surface reflectance map after the making herbs into wool of embodiment 4.
A kind of little textured mono-crystalline silicon etching solar cells promotor, comprise following component and weight percent content: pyruvic acid formicester 0.01%, vitamins C is 0.01%, oxalic acid 0.01%, lactic acid 0.01%, Virahol 0.1%, NaOH is 0.1%, surplus is that conductive resistance is deionized water more than 18M Ω, in the monocrystalline texturing slot that this promotor joining is contained to Isopropylamine (IPA) mixing solutions that NaOH that concentration is 1wt% and concentration are 1wt%, the volume ratio of promotor and mixing solutions is 1: 1000, the temperature of controlling texturing slot is controlled at 80 ℃, after stirring, monocrystalline silicon piece is soaked in texturing slot and is reacted, the making herbs into wool time is controlled at 900s, complete the surface wool manufacturing of monocrystalline silicon piece is processed.
Embodiment 6
A kind of little textured mono-crystalline silicon etching solar cells promotor, comprise following component and weight percent content: pyruvic acid formicester 5%, vitamins C is 5%, oxalic acid 3%, lactic acid 5%, Virahol 2%, KOH is 2%, surplus is that conductive resistance is deionized water more than 18M Ω, in the monocrystalline texturing slot that this promotor joining is contained to Isopropylamine (IPA) mixing solutions that NaOH that concentration is 1.5wt% and concentration are 3wt%, the volume ratio of promotor and mixing solutions is 1: 2000, the temperature of controlling texturing slot is controlled at 80 ℃, after stirring, monocrystalline silicon piece is soaked in texturing slot and is reacted, the making herbs into wool time is controlled at 1200s, complete the surface wool manufacturing of monocrystalline silicon piece is processed.
Claims (6)
1. a little textured mono-crystalline silicon etching solar cells promotor, is characterized in that, this promotor comprises following component and weight percent content:
2. a kind of little textured mono-crystalline silicon etching solar cells promotor according to claim 1, is characterized in that, described alkali is NaOH or KOH.
3. the application of a little textured mono-crystalline silicon etching solar cells promotor as claimed in claim 1, it is characterized in that, in the monocrystalline texturing slot that promotor joining contained to alkali and Isopropylamine (IPA) mixing solutions, the temperature of controlling texturing slot is controlled at 80 ℃, after stirring, monocrystalline silicon piece is soaked in texturing slot and is reacted, and the making herbs into wool time is controlled at 900-1200s.
4. the application of a kind of little textured mono-crystalline silicon etching solar cells promotor according to claim 3, is characterized in that, described promotor and the volume ratio of mixing solutions are 1 ︰ 1000-1 ︰ 2000.
5. the application of a kind of little textured mono-crystalline silicon etching solar cells promotor according to claim 3, is characterized in that, the alkali in described mixing solutions is NaOH or KOH, and concentration is 1-1.5wt%.
6. the application of a kind of little textured mono-crystalline silicon etching solar cells promotor according to claim 3, is characterized in that, the concentration of the Isopropylamine in described mixing solutions is 1-3wt%.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201110098689.2A CN102337595B (en) | 2011-04-19 | 2011-04-19 | Small-texture monocrystal silicon solar cell texture-manufacturing promoter and application thereof |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201110098689.2A CN102337595B (en) | 2011-04-19 | 2011-04-19 | Small-texture monocrystal silicon solar cell texture-manufacturing promoter and application thereof |
Publications (2)
Publication Number | Publication Date |
---|---|
CN102337595A CN102337595A (en) | 2012-02-01 |
CN102337595B true CN102337595B (en) | 2014-03-05 |
Family
ID=45513531
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201110098689.2A Expired - Fee Related CN102337595B (en) | 2011-04-19 | 2011-04-19 | Small-texture monocrystal silicon solar cell texture-manufacturing promoter and application thereof |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN102337595B (en) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103510160A (en) * | 2012-06-29 | 2014-01-15 | 上海汉遥新材料科技有限公司 | Monocrystalline silicon system flocking additive for crystalline silicon solar battery |
CN102912450B (en) * | 2012-10-22 | 2015-07-01 | 江苏荣马新能源有限公司 | Monocrystalline silicon flocking additive |
CN103774239B (en) * | 2013-11-13 | 2016-08-17 | 河南科技学院 | A kind of monocrystal silicon silicon chip cleaning and texturing technique |
CN105154983B (en) * | 2015-08-21 | 2017-09-12 | 浙江启鑫新能源科技股份有限公司 | The preparation method of monocrystaline silicon solar cell |
CN110578176A (en) * | 2019-09-05 | 2019-12-17 | 通威太阳能(眉山)有限公司 | texture surface making accelerant for single-crystal high-dense-grid solar cell with small texture surface and using method of texture surface making accelerant |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101609847A (en) * | 2009-07-08 | 2009-12-23 | 西安交通大学苏州研究院 | Electrode of solar battery forms uses slurry |
CN101615637A (en) * | 2009-07-08 | 2009-12-30 | 西安交通大学苏州研究院 | Electrode of solar battery forms with slurry and preparation method thereof |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101168589B1 (en) * | 2008-03-26 | 2012-07-30 | 엘지전자 주식회사 | Method for texturing of silicon solar cell using surfactant |
-
2011
- 2011-04-19 CN CN201110098689.2A patent/CN102337595B/en not_active Expired - Fee Related
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101609847A (en) * | 2009-07-08 | 2009-12-23 | 西安交通大学苏州研究院 | Electrode of solar battery forms uses slurry |
CN101615637A (en) * | 2009-07-08 | 2009-12-30 | 西安交通大学苏州研究院 | Electrode of solar battery forms with slurry and preparation method thereof |
Also Published As
Publication number | Publication date |
---|---|
CN102337595A (en) | 2012-02-01 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN102181935B (en) | Method and corrosive liquid for making texture surface of monocrystalline silicon | |
US9966484B2 (en) | Process for preparing passivated emitter rear contact (PERC) solar cells | |
CN107268087A (en) | A kind of metal catalytic etching method for the polysilicon chip reflectivity for reducing Buddha's warrior attendant wire cutting | |
CN102337595B (en) | Small-texture monocrystal silicon solar cell texture-manufacturing promoter and application thereof | |
CN102337596B (en) | Monocrystalline silicon solar cell alkali texturing assistant agent and its application | |
CN105355693B (en) | A kind of PERC solar-energy photo-voltaic cells for improving photoelectric transformation efficiency | |
CN101179100A (en) | Manufacturing method of large area low bending flexure ultra-thin type double face lighting solar cell | |
CN103938276A (en) | Monocrystalline silicon wafer texturing additive, texturing solution and corresponding texturing method | |
CN102593263A (en) | Preparation method of N-type crystalline silicon back emitter junction solar battery and corrosive liquid | |
CN105405755B (en) | For the acid Woolen-making liquid of silicon chip pyramid making herbs into wool, etching method and the silicon chip made of the etching method making herbs into wool | |
CN103378212B (en) | Texturing method for solar cell | |
CN101851756B (en) | Additive of alkali wool making solution for monocrystalline silicon pieces and using method | |
CN101872806A (en) | Method for texture etching of solar cell silicon wafer and method for manufacturing solar cell | |
CN101851757B (en) | Additive of wool making solution for monocrystalline silicon pieces and using method | |
CN103413858B (en) | A kind of preparation method of MWT crystal silicon solar energy battery | |
CN103117330B (en) | A kind of preparation method of solar cell | |
CN105133038A (en) | Preparing method for polycrystalline silicon of efficient nanometer textured structure and application thereof | |
CN104716209A (en) | Solar cell based on silicon substrate nanowire and preparing method thereof | |
CN103510160A (en) | Monocrystalline silicon system flocking additive for crystalline silicon solar battery | |
CN101414641A (en) | Solar cell knap surface structure and preparation method | |
CN104409564A (en) | N-type nanometer black silicon manufacturing method and solar cell manufacturing method | |
CN102747426B (en) | Texture liquid for preparing submicron suede-like monocrystalline silicon wafer and preparation method thereof | |
CN205194713U (en) | A silicon chip for solar cell | |
De CLERCQ et al. | Advanced concepts of industrial technologies of crystalline silicon solar cells | |
CN105206688A (en) | Polycrystalline silicon solar cell mixed texturing method |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
GR01 | Patent grant | ||
GR01 | Patent grant | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20140305 Termination date: 20150419 |
|
EXPY | Termination of patent right or utility model |