CN109065643A - A kind of N-type crystalline silicon solar cell and preparation method thereof based on doped polycrystalline germanium-silicon film - Google Patents
A kind of N-type crystalline silicon solar cell and preparation method thereof based on doped polycrystalline germanium-silicon film Download PDFInfo
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- CN109065643A CN109065643A CN201810812509.4A CN201810812509A CN109065643A CN 109065643 A CN109065643 A CN 109065643A CN 201810812509 A CN201810812509 A CN 201810812509A CN 109065643 A CN109065643 A CN 109065643A
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- 229910021419 crystalline silicon Inorganic materials 0.000 title claims abstract description 45
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 title claims abstract description 25
- 238000002360 preparation method Methods 0.000 title claims abstract description 13
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 21
- 229910052751 metal Inorganic materials 0.000 claims abstract description 12
- 239000002184 metal Substances 0.000 claims abstract description 12
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims abstract description 8
- 229910052796 boron Inorganic materials 0.000 claims abstract description 8
- 235000008216 herbs Nutrition 0.000 claims abstract description 6
- 210000002268 wool Anatomy 0.000 claims abstract description 6
- 239000006117 anti-reflective coating Substances 0.000 claims abstract description 5
- 239000003513 alkali Substances 0.000 claims abstract description 3
- 239000000758 substrate Substances 0.000 claims description 34
- 229910052710 silicon Inorganic materials 0.000 claims description 19
- 239000010703 silicon Substances 0.000 claims description 19
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 15
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 11
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 11
- 238000002161 passivation Methods 0.000 claims description 9
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 8
- 238000004140 cleaning Methods 0.000 claims description 8
- 229910052732 germanium Inorganic materials 0.000 claims description 7
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 7
- 229920005591 polysilicon Polymers 0.000 claims description 7
- 238000009792 diffusion process Methods 0.000 claims description 5
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 5
- 238000012545 processing Methods 0.000 claims description 5
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 4
- 150000001875 compounds Chemical class 0.000 claims description 4
- 230000003647 oxidation Effects 0.000 claims description 4
- 238000007254 oxidation reaction Methods 0.000 claims description 4
- RZVAJINKPMORJF-UHFFFAOYSA-N Acetaminophen Chemical compound CC(=O)NC1=CC=C(O)C=C1 RZVAJINKPMORJF-UHFFFAOYSA-N 0.000 claims description 3
- 239000005297 pyrex Substances 0.000 claims description 3
- 230000003667 anti-reflective effect Effects 0.000 claims description 2
- 238000000034 method Methods 0.000 abstract description 10
- 238000005516 engineering process Methods 0.000 abstract description 7
- 238000012546 transfer Methods 0.000 abstract description 6
- 230000005641 tunneling Effects 0.000 abstract description 4
- 239000010408 film Substances 0.000 description 38
- 239000010409 thin film Substances 0.000 description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 6
- 229910021417 amorphous silicon Inorganic materials 0.000 description 5
- 229910006160 GeF4 Inorganic materials 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 4
- 239000012528 membrane Substances 0.000 description 4
- 230000006798 recombination Effects 0.000 description 4
- 238000005215 recombination Methods 0.000 description 4
- 229910052814 silicon oxide Inorganic materials 0.000 description 4
- PPMWWXLUCOODDK-UHFFFAOYSA-N tetrafluorogermane Chemical compound F[Ge](F)(F)F PPMWWXLUCOODDK-UHFFFAOYSA-N 0.000 description 4
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 3
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 229910000073 phosphorus hydride Inorganic materials 0.000 description 3
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 2
- 229910007264 Si2H6 Inorganic materials 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 238000006388 chemical passivation reaction Methods 0.000 description 2
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000000407 epitaxy Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000002585 base Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000011031 large-scale manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000013528 metallic particle Substances 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 125000004437 phosphorous atom Chemical group 0.000 description 1
- 238000013082 photovoltaic technology Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 238000006479 redox reaction Methods 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 238000007704 wet chemistry method Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The present invention relates to a kind of N-type crystalline silicon solar cell and preparation method thereof based on doped polycrystalline germanium-silicon film, it is by the two-sided making herbs into wool of N-type crystalline silicon piece, then two-sided boron is diffused in front surface and forms emitter, carries out alkali throwing in back surface and prepares oxide tunnel layer, then 350oN+ polycrystalline silicon germanium film is prepared by response type hot CVD under cryogenic conditions within C, back side tunneling oxide is formed and is passivated contact structures, then prepare emitter passivating film and front-back antireflective coating, finally prepares metal grid lines electrode in battery front-back.Back surface of the present invention prepares N+ polycrystalline silicon germanium film using low temperature process, not only avoid damage of the high-temperature technology to tunnel oxide, and the polycrystalline silicon germanium film of higher crystalline quality can be obtained, the doping concentration and carrier mobility for effectively improving the layer film are conducive to the fill factor and transfer efficiency that improve battery.
Description
Technical field
The invention belongs to solar cell fields, and in particular to a kind of N-type double-side efficient crystal-silicon solar cell and its preparation
Method.
Background technique
With the continuous development of photovoltaic technology, efficient, high stability, low cost photovoltaic cell will become photovoltaic market
The main product of pursuit.Compared to P-type crystal silicon solar cell, and N type crystal-silicon solar cell has high conversion efficiency, light
The advantages that induced attenuation is low, stability is good, by more and more attention on photovoltaic market.
How to further increase the transfer efficiency of battery and reduce cost, just becomes in face of the numerous researchers of photovoltaic circle
A problem and industry pursue core objective.Pass through the working principle and loss in efficiency point to crystal-silicon solar cell
Analysis is it is found that the biggest factor that limit efficiency is promoted is exactly the compound of carrier.Some researches show that when the recombination rate at the back side
When rising to 103cm/s and 105cm/s respectively from 10cm/s, 200 microns of thickness, the solar cell that diffusion length is 1000 microns turns
It changes efficiency and declines 2% and 4% respectively.It can be seen that the importance of interface passivation.What German Fraunhofer research institute proposed
TOPCon(Tunnel oxide passivated contact) not only to possess good passivation contact special for solar cell technology
Property, also achieve the selective collection of carrier.By chemical passivation, with field, passivation combines the technology, significantly reduces carrier
Recombination rate, not only maintain higher open-circuit voltage and also improve fill factor, to improve the transfer efficiency of battery,
Its transfer efficiency alreadys exceed 25.7% at present.
Currently, silicon thin film used in TOPCon solar cell back surface field often uses plasma enhanced chemical vapor deposition
(PECVD) perhaps the equipment such as low-pressure chemical vapor deposition (LPCVD) preparation doping way includes gas phase doping or ion in situ
Injection etc..Since silicon thin film self-defect density is higher, cause Effective Doping concentration lower, a high annealing is needed to activate
Foreign atom.The process of the activated at does not only result in substrate quality decline, and is easy to destroy tunnel oxide, shadow
Ring surface of silicon passivation effect.
For the defect of current silicon thin film doping process, the present invention proposes low-temperature epitaxy polycrystalline silicon germanium thin film technique to realize
The phosphorus doping back surface field of TOPCon solar cell realizes the growth of N-type heavily doped silicon germanium film at lower temperature (~ 350oC), into
And substrate quality caused by pyroprocess is avoided to deteriorate, and then from being expected to further increase solar cell transfer efficiency.
Summary of the invention
The present invention proposes a kind of base primarily directed to the defect of existing TOPCon back of solar cell silicon thin film doping process
In the N-type crystalline silicon solar cell and preparation method thereof of doped polycrystalline germanium-silicon film, pass through low-temperature epitaxy polycrystalline silicon germanium film
Technology realizes the phosphorus doping back surface field of TOPCon solar cell, realizes the growth of N-type heavily doped silicon germanium film at a lower temperature,
The polycrystalline silicon germanium film crystallization with higher for avoiding substrate quality caused by pyroprocess from deteriorating, and being obtained using the technology
Quality, carrier mobility are higher, are conducive to the fill factor for improving battery, further increase solar cell transfer efficiency.
To achieve the above object, the technical solution of the present invention is as follows:
A kind of N-type crystalline silicon solar cell based on doped polycrystalline germanium-silicon film, including N-type crystalline silicon piece, in light-receiving surface direction
Successively compound front metal grid line, front surface antireflection film, front side emitter pole passivating film, boron doping emitter, N-type from top to bottom
Crystalline silicon substrate, oxide tunnel layer, phosphor doped polysilicon germanium film, back side antireflective coating, back metal grid line.
A further improvement of the present invention is that: the oxide tunnel layer is thin layer of silicon oxide or aluminum oxide film
Layer, thickness is in 1.0-3.5 nm.
A further improvement of the present invention is that: the thickness of the phosphor doped polysilicon germanium film is in 15-200 nm.
Preparation preparation method of the invention, includes the following steps:
(1) N-type crystalline silicon substrate is gone into damaging layer and upper and lower surface making herbs into wool；
(2) the N-type crystalline silicon substrate for being prepared for suede structure is started the cleaning processing；
(3) the N-type crystalline silicon substrate described by cleaning treatment carries out boron diffusion, forms emitter；
(4) silicon nitride mask is prepared on the N-type crystalline silicon substrate face emitter；
(5) alkali is carried out to above-mentioned N-type crystalline silicon substrate back to skim knot, and start the cleaning processing；
(6) oxide tunnel layer is grown in above-mentioned N-type crystalline silicon substrate back；
(7) phosphor doped polysilicon germanium film is prepared on above-mentioned N-type crystalline silicon substrate back oxide tunnel layer, forms BSF knot
Structure；
(8) silicon nitride and Pyrex of N-type crystalline silicon substrate face are then removed；
(9) aluminum oxide passivation film, then two-sided grown silicon nitride antireflective are prepared in above-mentioned N-type crystalline silicon substrate emitter surface
Film；
(10) then use is screen printed onto N-type crystalline silicon substrate face and the back side prepares metal gate electrode.
Compared with the two-sided crystal-silicon solar cell technology of existing N-type, the invention has the following beneficial effects:
(1) present invention forms field passivation and the superimposed double effects of chemical passivation in battery back surface, realizes the choosing of electronics
Selecting property is collected, and is effectively reduced the compound of back surface carrier, is help to obtain higher open-circuit voltage and fill factor, therefore
The photoelectric conversion efficiency of battery can effectively be improved；
(2) for conventional TOPCon solar cell, back surface field silicon thin film needs a high annealing to improve doping concentration, temperature
Degree is up to 800oC or more, it is possible to tunnel oxide be caused to be destroyed；The present invention proposes thin using N+ polycrystalline silicon germanium in back surface field
Film replaces conventional silicon thin film (nanocrystalline or polycrystalline) not only to avoid tunnel oxide using lower temperature growth process (~ 350 oC)
It being damaged, additionally it is possible to the polycrystalline silicon germanium film for obtaining higher crystalline quality effectively improves doping concentration and carrier mobility,
And then be conducive to improve the fill factor of battery.
(3) technical process of the invention is relatively easy, and equipment cost is lower, is suitably applied large-scale production.
Detailed description of the invention
Fig. 1 is the structural schematic diagram of solar cell prepared by the present invention；
In figure: front surface metal gate electrode 1, front surface silicon nitride anti-reflecting film 2, emitter passivating film 3, positive boron doping transmitting
Pole 4, N-type crystalline silicon substrate 5, back surface tunnel oxide 6, back surface N+ germanium-silicon film 7, back surface antireflective coating 8, back surface
Metal gate electrode 9.
Specific embodiment
In order to make those skilled in the art better understand bill of the present invention, below in conjunction in the embodiment of the present invention
Attached drawing, the technical scheme in the embodiment of the invention is clearly and completely described.
Embodiment:
The present invention relates to a kind of N-type crystalline silicon solar cells based on doped polycrystalline germanium-silicon film as shown in Figure 1: comprising preceding
Surface metal gate electrode 1, front surface silicon nitride anti-reflecting film 2, emitter passivating film 3, positive boron doping emitter 4, N-type crystal
Silicon substrate 5, back surface tunnel oxide 6, back surface N+ germanium-silicon film 7, back surface antireflective coating 8, back surface metal gate electrode
9。
Preparation method of the invention, includes the following steps:
Firstly, carrying out conventional making herbs into wool to N-type crystalline silicon, there is flannelette knot in crystalline silicon substrate front surface and back surface after making herbs into wool
Structure.Then the RCA for carrying out standard to the substrate after making herbs into wool is cleaned, and removes organic contaminations and metallic particles of surface of crystalline silicon etc..
After completing cleaning, two-sided boron diffusion is carried out, emitter is formed.Then using PECVD in crystalline silicon front surface grown silicon nitride
Exposure mask carries out aqueous slkali polishing treatment in crystalline silicon back surface, removes the diffusion junctions at the back side, then carry out at RCA cleaning again
Reason.Then, in the growth tunnel oxide growth of crystalline silicon back surface.Tunneling oxide layer can be silicon oxide film, be also possible to
Aluminum oxide film.By taking silicon oxide film as an example, growth can be grown using wet chemistry, as concentrated nitric acid solution impregnates or contains
The deionized water of ozone is impregnated, and can also be grown using dry method, such as UV ozone oxidation, hot oxygen oxidation etc..The oxide layer of formation
Thickness is in 1.0 ~ 3.5 nm.The present invention does not limit practical range of the invention using silicon oxide film as example with this.
After the growth for completing tunnel oxide, the preparation of N+ polycrystalline silicon germanium film is carried out at the crystalline silicon back side.First in tunnel
Low-pressure chemical vapor deposition can be used in 5 ~ 8nm, the silicon thin film by wearing one layer of N-type amorphous silicon membrane of growth, thickness in oxide layer
(LPCVD), prepared by the equipment such as plasma enhanced chemical vapor deposition (PECVD), hot-wire chemical gas-phase deposition (Cat-CVD).
Then processing is performed etching to this layer of amorphous silicon membrane using GeF4, is etched away amorphous silicon membrane, and in tunnel oxide
Surface forms SiGe nanometer seed layer, then, with GeF4, Si2H6 and PH3 for source gas, carries out redox reaction in seed crystal
Layer surface carries out epitaxial growth, obtains N+ polycrystalline silicon germanium film.By adjusting the gas flow of PH3, make N+ polycrystalline silicon germanium film
Doping concentration in 1 × 1019 cm-3 ~ 1 × 1021 cm-3, this completes the preparations of cell back field.Then, pass through HF
Immersion, remove the silicon nitride mask and Pyrex of front surface, and grow aluminum oxide passivation film with ALD, thickness 10 ~
15nm, then two-sided grown silicon nitride antireflection film, thickness is in 70 ~ 90 nm, and so far the critical process of the battery is complete
At the preparation of metal electrode is finally completed by the way of silk-screen or vapor deposition in the front surface of battery and back surface.
Back surface tunnel layer is the material that can provide passivation and carrier tunneling effect, as oxide, nitride, conduction are poly-
He Wu Alto, in the present embodiment, tunnel layer (6) is the oxide formed in the step (6), including silica or aluminium oxide etc.,
Tunnel oxide (6) can effectively be passivated silicon substrate (5) surface defect, and realize transporting for carrier by tunneling effect, from
And it reduces the surface recombination on silicon substrate (104) while not influencing transporting for carrier, therefore improve the fill factor of battery.
The present invention grows one layer of N-type amorphous silicon membrane using PECVD on tunnel oxide, then thin to silicon using GeF4
Film is handled, and while etching amorphous silicon layer, the seed layer of one layer of polycrystalline silicon germanium is formed on tunnel oxide, then
The reaction product of Si2H6, PH3 and GeF4 will carry out extensional mode growth by substrate of this layer of seed layer, and then obtain high doped
Polycrystalline silicon germanium film.Reaction herein is in selective growth feature, does not have film growth in oxidation layer surface, so not to silicon
Substrate front surface has an impact.Heavily doped polysilicon germanium film is prepared by the technology, can not only obtain uniform doping point
Cloth, moreover it is possible to realize that single side adulterates, phosphorus atoms is avoided to be diffused into crystalline silicon front surface.The polycrystalline silicon germanium film of heavy doping is in crystalline silicon
Substrate back forms back surface field, effectively stops few son rearwardly to spread, and then reduce the recombination rate of carrier.
Obviously, described embodiment is only section Example of the invention, instead of all the embodiments.Based on this
Embodiment in invention, every other reality obtained by those of ordinary skill in the art without making creative efforts
Example is applied, should fall within the scope of the present invention.
Claims (4)
1. a kind of N-type crystalline silicon solar cell based on doped polycrystalline germanium-silicon film, it is characterised in that: including N-type crystalline silicon piece,
In light-receiving surface direction, successively compound front metal grid line, front surface antireflection film, front side emitter pole passivating film, boron are mixed from top to bottom
Miscellaneous emitter, N-type crystalline silicon substrate, oxide tunnel layer, phosphor doped polysilicon germanium film, back side antireflective coating, back metal
Grid line.
2. N-type crystalline silicon solar cell according to claim 1, it is characterised in that: the oxide tunnel layer is oxidation
Silicon thin layer or alumina flake, thickness is in 1.0-3.5 nm.
3. N-type crystalline silicon solar cell according to claim 1, it is characterised in that: the phosphor doped polysilicon germanium film
Thickness in 15-200 nm.
4. a kind of preparation method for preparing N-type crystalline silicon solar cell as described in claim 1, which is characterized in that including such as
Lower step:
(1) N-type crystalline silicon substrate is gone into damaging layer and upper and lower surface making herbs into wool；
(2) the N-type crystalline silicon substrate for being prepared for suede structure is started the cleaning processing；
(3) the N-type crystalline silicon substrate described by cleaning treatment carries out boron diffusion, forms emitter；
(4) silicon nitride mask is prepared on the N-type crystalline silicon substrate face emitter；
(5) alkali is carried out to above-mentioned N-type crystalline silicon substrate back to skim knot, and start the cleaning processing；
(6) oxide tunnel layer is grown in above-mentioned N-type crystalline silicon substrate back；
(7) phosphor doped polysilicon germanium film is prepared on above-mentioned N-type crystalline silicon substrate back oxide tunnel layer, forms BSF knot
Structure；
(8) silicon nitride and Pyrex of N-type crystalline silicon substrate face are then removed；
(9) aluminum oxide passivation film, then two-sided grown silicon nitride antireflective are prepared in above-mentioned N-type crystalline silicon substrate emitter surface
Film；
(10) then use is screen printed onto N-type crystalline silicon substrate face and the back side prepares metal gate electrode.
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| CN201810812509.4A CN109065643A (en) | 2018-07-23 | 2018-07-23 | A kind of N-type crystalline silicon solar cell and preparation method thereof based on doped polycrystalline germanium-silicon film |
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109802007A (en) * | 2019-01-02 | 2019-05-24 | 中国科学院宁波材料技术与工程研究所 | The method that tubular type PECVD prepares polysilicon passivation contact structures |
| CN109888034A (en) * | 2019-04-04 | 2019-06-14 | 国家电投集团西安太阳能电力有限公司 | A kind of perovskite/back contacts crystal silicon lamination solar cell |
| CN110120434A (en) * | 2019-06-18 | 2019-08-13 | 合肥晶澳太阳能科技有限公司 | Cell piece and preparation method thereof |
| CN111987182A (en) * | 2020-08-27 | 2020-11-24 | 上海理想万里晖薄膜设备有限公司 | TOPCon solar cell and manufacturing method thereof |
| CN112599636A (en) * | 2020-12-07 | 2021-04-02 | 浙江晶科能源有限公司 | Preparation method of crystalline silicon solar cell and crystalline silicon solar cell |
| CN113437159A (en) * | 2021-06-07 | 2021-09-24 | 青海黄河上游水电开发有限责任公司西宁太阳能电力分公司 | N-type TOPCon battery with quantum well structure and manufacturing method thereof |
| CN113488547B (en) * | 2021-01-09 | 2023-05-16 | 中国科学院宁波材料技术与工程研究所 | Tunnel oxide passivation structure and manufacturing method and application thereof |
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2018
- 2018-07-23 CN CN201810812509.4A patent/CN109065643A/en active Pending
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN109802007A (en) * | 2019-01-02 | 2019-05-24 | 中国科学院宁波材料技术与工程研究所 | The method that tubular type PECVD prepares polysilicon passivation contact structures |
| CN109888034A (en) * | 2019-04-04 | 2019-06-14 | 国家电投集团西安太阳能电力有限公司 | A kind of perovskite/back contacts crystal silicon lamination solar cell |
| CN110120434A (en) * | 2019-06-18 | 2019-08-13 | 合肥晶澳太阳能科技有限公司 | Cell piece and preparation method thereof |
| CN110120434B (en) * | 2019-06-18 | 2024-03-26 | 合肥晶澳太阳能科技有限公司 | Battery piece and preparation method thereof |
| CN111987182A (en) * | 2020-08-27 | 2020-11-24 | 上海理想万里晖薄膜设备有限公司 | TOPCon solar cell and manufacturing method thereof |
| CN112599636A (en) * | 2020-12-07 | 2021-04-02 | 浙江晶科能源有限公司 | Preparation method of crystalline silicon solar cell and crystalline silicon solar cell |
| CN113488547B (en) * | 2021-01-09 | 2023-05-16 | 中国科学院宁波材料技术与工程研究所 | Tunnel oxide passivation structure and manufacturing method and application thereof |
| CN113437159A (en) * | 2021-06-07 | 2021-09-24 | 青海黄河上游水电开发有限责任公司西宁太阳能电力分公司 | N-type TOPCon battery with quantum well structure and manufacturing method thereof |
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