CN114464686B - Novel tunneling passivation contact structure battery and preparation method thereof - Google Patents
Novel tunneling passivation contact structure battery and preparation method thereof Download PDFInfo
- Publication number
- CN114464686B CN114464686B CN202111622495.8A CN202111622495A CN114464686B CN 114464686 B CN114464686 B CN 114464686B CN 202111622495 A CN202111622495 A CN 202111622495A CN 114464686 B CN114464686 B CN 114464686B
- Authority
- CN
- China
- Prior art keywords
- layer
- silicon substrate
- poly
- type
- thickness
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000002161 passivation Methods 0.000 title claims abstract description 29
- 238000002360 preparation method Methods 0.000 title claims abstract description 15
- 230000005641 tunneling Effects 0.000 title claims abstract description 14
- 239000000758 substrate Substances 0.000 claims abstract description 38
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 33
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 31
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 31
- 239000010703 silicon Substances 0.000 claims abstract description 31
- 238000000034 method Methods 0.000 claims abstract description 11
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims abstract description 9
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims abstract description 9
- 229910052709 silver Inorganic materials 0.000 claims abstract description 9
- 239000004332 silver Substances 0.000 claims abstract description 9
- 238000009792 diffusion process Methods 0.000 claims abstract description 7
- 238000004140 cleaning Methods 0.000 claims description 11
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 9
- 229910052796 boron Inorganic materials 0.000 claims description 9
- 238000000151 deposition Methods 0.000 claims description 9
- 230000008021 deposition Effects 0.000 claims description 7
- 239000003513 alkali Substances 0.000 claims description 3
- 239000005388 borosilicate glass Substances 0.000 claims description 3
- 238000005530 etching Methods 0.000 claims description 3
- 238000010329 laser etching Methods 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 claims 2
- 238000006243 chemical reaction Methods 0.000 abstract description 7
- 229920005591 polysilicon Polymers 0.000 abstract description 7
- 238000010521 absorption reaction Methods 0.000 abstract description 4
- 230000003071 parasitic effect Effects 0.000 abstract description 4
- 238000005245 sintering Methods 0.000 abstract description 2
- 239000011259 mixed solution Substances 0.000 description 5
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- CFOAUMXQOCBWNJ-UHFFFAOYSA-N [B].[Si] Chemical compound [B].[Si] CFOAUMXQOCBWNJ-UHFFFAOYSA-N 0.000 description 1
- HIVGXUNKSAJJDN-UHFFFAOYSA-N [Si].[P] Chemical compound [Si].[P] HIVGXUNKSAJJDN-UHFFFAOYSA-N 0.000 description 1
- -1 and then Inorganic materials 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000003637 basic solution Substances 0.000 description 1
- 238000013329 compounding Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 230000035484 reaction time Effects 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 238000002791 soaking Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 210000002268 wool Anatomy 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
- H01L31/1868—Passivation
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Sustainable Energy (AREA)
- Photovoltaic Devices (AREA)
Abstract
A novel tunneling passivation contact structure battery belongs to the technical field of solar cells and comprises an n-type silicon substrate, wherein the front surface of the n-type monocrystalline silicon substrate is sequentially provided with a p-type emitter, a passivation layer and an antireflection layer from bottom to top, a front electrode is fixedly arranged on the antireflection layer, the lower end of the front electrode downwards extends to the p-type emitter, and the back surface of the n-type monocrystalline silicon substrate is sequentially provided withA layer, an n-poly-si layer, a TCO layer, and a back electrode secured to the TCO layer; the anti-reflection layer is an n-poly-si layer, the thickness of the n-poly-si layer is 20nm-30nm, compared with the conventional topcon battery, the n-poly-si layer can meet passivation contact only by 20nm, so that the preparation cost is reduced, meanwhile, on the premise of reducing the thickness by the thickness, the current loss caused by parasitic absorption of the doped polysilicon layer is greatly reduced, and the conversion efficiency of the battery is further improved; the invention also discloses a preparation method of the high-temperature silver paste, and the sintering diffusion problem caused by high-temperature silver paste is avoided by introducing a low-temperature silver paste process.
Description
Technical Field
The invention belongs to the technical field of solar cell processing, and particularly relates to a novel tunneling passivation contact structure cell and a preparation method thereof.
Background
Currently existing topcon batteries generally adopt a polysilicon doped layer with the wavelength of more than 100nm, so that silver paste in subsequent high-temperature screen printing can be well prevented from being sintered and diffused into a tunneling layer and bulk silicon, and unnecessary compounding is caused.
The doped polysilicon has stronger parasitic absorption and overlarge thickness, so that the process cost is improved, and the performance is greatly lost.
Disclosure of Invention
The invention aims to provide a novel tunneling passivation contact structure battery and a preparation method thereof, so as to solve the problems in the background technology.
In order to achieve the above purpose, the present invention provides the following technical solutions:
The utility model provides a novel tunneling passivation contact structure battery, includes n type silicon substrate, n type monocrystalline silicon substrate's front has set gradually p type projecting pole, passivation layer and antireflection layer from bottom to top, the front electrode has set firmly on the antireflection layer, the lower extreme downwardly extending of front electrode extremely p type projecting pole, wherein, n type monocrystalline silicon substrate's the back top-down has set gradually A layer, an n-poly-si layer, a TCO layer, and a back electrode affixed to the TCO layer; wherein the thickness of the n-poly-si layer (7) is 20nm-30nm.
Preferably, the thickness of the TCO layer is 80-200 nm.
Preferably, the method comprisesThe thickness of the layer is 0.3-3nm, and the antireflection layer is/>A layer of/>The thickness of the layer is 80-200 nm a.
A method for preparing the novel tunneling passivation contact structure battery in any of the above schemes, comprising the following steps:
S1, providing an n-type silicon substrate, cleaning the n-type silicon substrate, and then making wool;
S2, performing boron diffusion on the surface of the n-type silicon substrate to prepare a p-type emitter;
S3, cleaning boron on the back surface of the n-type silicon substrate to remove formed borosilicate glass and boron diffused to the n-type silicon substrate;
s4, preparation A layer;
S5, at Preparing an n-poly-si layer on the layer;
s6, etching and cleaning by alkali liquor;
S7, carrying out deposition treatment on the p-type emitter to prepare a passivation layer;
s8, preparing an antireflection layer on the passivation layer;
S9, TCO deposition is carried out on the n-poly-si layer, and a TCO layer is prepared;
and S10, carrying out laser etching on the front surface of the n-type silicon substrate, and then adopting a low-temperature silver paste process to prepare a front electrode and a back electrode.
Preferably, the passivation layer isAnd (5) depositing.
Preferably, S1 includes: and (5) texturing the n-type silicon substrate to form a pyramid-shaped light trapping structure.
Compared with the prior art, the technical scheme has the following effects:
compared with the conventional topcon battery, the doped polysilicon layer (namely the n-poly-si layer) can meet passivation contact only by 20nm at minimum, so that the preparation cost is reduced, meanwhile, on the premise of reducing the thickness by the width, the current loss caused by parasitic absorption of the doped polysilicon layer is greatly reduced, and the conversion efficiency of the battery is further improved.
Drawings
Fig. 1 is a schematic diagram of the overall structure of the present invention.
In the figure: a 1-n type single crystal silicon substrate; a 2-p type emitter; a 3-passivation layer; 4-an anti-reflection layer; 5-front electrode; 6-A layer; a 7-n-poly-si layer; an 8-TCO layer; 9-a back electrode.
Detailed Description
The following description of the embodiments of the present invention will be made with reference to the accompanying drawings, in which it is evident that the embodiments described are only some embodiments of the present invention, but not all embodiments.
Examples:
The novel tunneling passivation contact structure battery shown in fig. 1 comprises an n-type silicon substrate 1, wherein a p-type emitter 2, a passivation layer 3 and an anti-reflection layer 4 are sequentially arranged on the front surface of the n-type monocrystalline silicon substrate 1 from bottom to top, and in the embodiment, the passivation layer 3 adopts The deposition is carried out, in addition, a front electrode 5 is fixedly arranged on the anti-reflection layer 4, the lower end of the front electrode 5 extends downwards to the p-type emitter 2, wherein the back surface of the n-type monocrystalline silicon substrate 1 is sequentially provided with a/>, from top to bottomA layer 6, an n-poly-si layer 7, a TCO layer 8, and a back electrode 9 secured to the TCO layer 8; wherein the anti-reflection layer 4 is/>A layer, the thickness of the n-poly-si layer being 20nm-30nm; compared with the conventional topcon battery, the doped polysilicon layer (namely the n-poly-si layer) can meet passivation contact only by 20nm at minimum, so that the preparation cost is reduced, meanwhile, on the premise of reducing the thickness by the magnitude, the current loss caused by parasitic absorption of the doped polysilicon layer is greatly reduced, and the conversion efficiency of the battery is further improved.
In this embodiment, the thickness of the TCO layer 8 is 20nm-30nm.
In the present embodiment, theThe thickness of the layer 6 is 0.3-3nm and the thickness of the n-poly-si layer 7 is 15-300nm.
A method for preparing the novel tunneling passivation contact structure battery in any of the above schemes, comprising the following steps: s1, providing an n-type silicon substrate 1, and cleaning and then texturing the n-type silicon substrate 1; i.e. the n-type silicon substrate 1 is textured to form a pyramid-shaped light trapping structure; s2, performing boron diffusion on the surface of the n-type silicon substrate 1 to prepare a p-type emitter 2; s3, cleaning boron on the back surface of the n-type silicon substrate 1 to remove formed borosilicate glass and boron diffused to the n-type silicon substrate 1; specifically, the diffused n-type silicon substrate 1 is subjected to single-sided cleaning (rinsing and soaking on water) by adopting a first mixed solution with the volume ratio of 1:1:7, and then the diffused n-type silicon substrate 1 is soaked in a second mixed solution with the volume ratio of 1:11, so that the effect of forming a polished surface on the back surface of the diffused n-type silicon substrate 1 is achieved, wherein the first mixed solution comprises the following componentsThe components of the second mixed solution are/>Is a basic solution of (a); s4, preparation/>Layer 6, in this example, is prepared/>, on the back side of n-type silicon substrate 1 by promoting a thermal oxygen reaction in an LPCVD apparatusLayer 6, it is worth mentioning that in this preparation process, the equipment needs to be adjusted, i.e. the reaction temperature is adjusted to 550-650 °, and the reaction time is controlled to 10-30min, so as to obtain the corresponding/>The thickness of the layer 6 is 1nm-3nm, and the uniformity of the tunneling oxide layer prepared by the device is high, so that the photoelectric conversion efficiency of the prepared tunneling oxide passivation contact battery is higher; s5, atAn n-poly-si layer 7 is prepared on layer 6; specifically, first, an LPCVD apparatus is used to adjust the reaction temperature to 500-650 DEG, silane is introduced to deposit, thereby forming an intrinsic poly-si, and then, phosphorus diffusion and annealing treatment are performed to the intrinsic poly-si, thereby forming an n-poly-si layer 7;
S6, etching and cleaning by alkali liquor: in the preparation process of S5, the intrinsic poly-si is subjected to wrapping plating to the p-type emitter 2 and is covered and wrapped, meanwhile, a layer of phosphorus silicon film is formed on the surface of the n-poly-si layer 7 on the back surface due to phosphorus diffusion, in the embodiment, the p-type emitter 2 is exposed by cleaning the silicon wafer after S5 by adopting a first mixed solution with the volume ratio of 1:1:7, and meanwhile, the boron silicon film on the n-poly-si layer 7 on the back surface is removed; s7, carrying out deposition treatment on the p-type emitter 2 to prepare a passivation layer 3; s8, preparing an antireflection layer 4 on the passivation layer 3; s9, TCO deposition is carried out on the n-poly-si layer 7 to prepare a TCO layer 8; and S10, carrying out laser etching on the front surface of the n-type silicon substrate 1, and preparing the front electrode 5 and the back electrode 9 by adopting a low-temperature silver paste process.
By adopting the mode for preparation and introducing the low-temperature silver paste process, the problem of sintering diffusion caused by high-temperature silver paste is avoided.
In the description of the present invention, it should be understood that the terms "center," "lateral," "upper," "lower," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," and the like indicate or are based on the orientation or positional relationship shown in the drawings, merely to facilitate description of the invention and simplify the description, and do not indicate or imply that the devices or elements referred to must have a particular orientation, be constructed and operated in a particular orientation, and thus should not be construed as limiting the invention. Furthermore, the terms "first," "second," and the like, are used for descriptive purposes only and are not to be construed as indicating or implying a relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defining "a first" or "a second" may explicitly or implicitly include one or more such feature. In the description of the present invention, unless otherwise indicated, the meaning of "a number" is two or more. In addition, the term "include" and any variations thereof are intended to cover a non-exclusive inclusion.
The invention has been described in terms of embodiments, and the device can be modified and improved without departing from the principles of the invention. It should be noted that all technical solutions obtained by equivalent substitution or equivalent transformation fall within the protection scope of the present invention.
Claims (4)
1. The utility model provides a novel tunneling passivation contact structure battery, includes n type silicon substrate (1), its characterized in that: the front surface of the n-type monocrystalline silicon substrate (1) is sequentially provided with a p-type emitter (2), a passivation layer (3) and an antireflection layer (4) from bottom to top, the antireflection layer (4) is fixedly provided with a front electrode (5), the lower end of the front electrode (5) downwards extends to the p-type emitter (2), and the back surface of the n-type monocrystalline silicon substrate (1) is sequentially provided withA layer (6), an n-poly-si layer (7), a TCO layer (8), and a back electrode (9) affixed to the TCO layer (8); wherein the thickness of the n-poly-si layer (7) is 20nm-30nm, the thickness of the TCO layer (8) is 80nm-200nm, the/>The thickness of the layer (6) is 0.3-3nm, and the antireflection layer (4) is/>A layer of/>The thickness of the layer is 80nm-200nm.
2. A method of making the novel tunneling passivation contact cell of claim 1, characterized by: the method comprises the following steps: s1, providing an n-type silicon substrate (1), and cleaning and then texturing the n-type silicon substrate (1); s2, performing boron diffusion on the surface of the n-type silicon substrate (1) to prepare a p-type emitter (2); s3, performing boron cleaning on the back surface of the n-type silicon substrate (1) to remove borosilicate glass formed and boron diffused to the n-type silicon substrate (1); s4, preparationA layer (6); s5, at/>Preparing an n-poly-si layer (7) on the layer (6); s6, etching and cleaning by alkali liquor; s7, carrying out deposition treatment on the p-type emitter (2) to prepare a passivation layer (3); s8, preparing an anti-reflection layer (4) on the passivation layer (3); s9, TCO deposition is carried out on the n-poly-si layer (7) to prepare a TCO layer (8); s10, carrying out laser etching on the front surface of the n-type silicon substrate (1), and preparing a front electrode (5) and a back electrode (9) by adopting a low-temperature silver paste process.
3. The method of manufacturing as claimed in claim 2, wherein: the passivation layer (3) adoptsAnd (5) depositing.
4. A method of preparation as claimed in claim 3, wherein: s1 comprises the following steps: and (3) texturing the n-type silicon substrate (1) to form a pyramid-shaped light trapping structure.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111622495.8A CN114464686B (en) | 2021-12-28 | 2021-12-28 | Novel tunneling passivation contact structure battery and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111622495.8A CN114464686B (en) | 2021-12-28 | 2021-12-28 | Novel tunneling passivation contact structure battery and preparation method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN114464686A CN114464686A (en) | 2022-05-10 |
| CN114464686B true CN114464686B (en) | 2024-05-10 |
Family
ID=81406766
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202111622495.8A Active CN114464686B (en) | 2021-12-28 | 2021-12-28 | Novel tunneling passivation contact structure battery and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN114464686B (en) |
Citations (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2010119512A1 (en) * | 2009-04-14 | 2010-10-21 | 三菱電機株式会社 | Photovoltaic device and method for manufacturing the same |
| JP2011222630A (en) * | 2010-04-06 | 2011-11-04 | Mitsubishi Electric Corp | Manufacturing method for photovoltaic device |
| KR20130119569A (en) * | 2012-04-24 | 2013-11-01 | 에스티엑스 솔라주식회사 | Method for menufacture the bifacial solar cell |
| JP2014154619A (en) * | 2013-02-06 | 2014-08-25 | Sharp Corp | Method for manufacturing photoelectric conversion element |
| JP2014220346A (en) * | 2013-05-07 | 2014-11-20 | 株式会社村田製作所 | Solar cell and method of manufacturing the same |
| EP2922101A1 (en) * | 2014-03-19 | 2015-09-23 | Institut für Solarenergieforschung GmbH | Conductive polymer/Si interfaces at the backside of solar cells |
| US9293611B1 (en) * | 2014-09-24 | 2016-03-22 | Huey-Liang Hwang | Solar cell structure and method for fabricating the same |
| JP2016146471A (en) * | 2015-01-29 | 2016-08-12 | 三菱電機株式会社 | Method of manufacturing solar battery |
| CN109980022A (en) * | 2019-04-24 | 2019-07-05 | 通威太阳能（成都）有限公司 | A kind of p-type tunneling oxide passivation contact solar cell and preparation method thereof |
| CN110034193A (en) * | 2019-04-04 | 2019-07-19 | 国家电投集团西安太阳能电力有限公司 | A kind of how thin grid IBC battery of Topcon passivating structure and preparation method thereof |
| CN110061083A (en) * | 2019-02-19 | 2019-07-26 | 东方日升（常州）新能源有限公司 | A kind of full-frontal passivation contacts the preparation method of efficient p-type crystal silicon solar battery |
| CN110233180A (en) * | 2019-06-02 | 2019-09-13 | 苏州腾晖光伏技术有限公司 | The preparation method of p-type back side tunnel oxide passivation contact solar cell |
| CN209561421U (en) * | 2019-04-24 | 2019-10-29 | 通威太阳能（成都）有限公司 | A kind of p-type tunneling oxide passivation contact solar cell |
| CN110459638A (en) * | 2019-06-05 | 2019-11-15 | 国家电投集团西安太阳能电力有限公司 | A kind of IBC battery and preparation method thereof of Topcon passivation |
| WO2020220394A1 (en) * | 2019-04-29 | 2020-11-05 | 南通天盛新能源股份有限公司 | Double-sided power generation solar cell and fabricating method therefor |
| CN112186049A (en) * | 2020-10-28 | 2021-01-05 | 天合光能股份有限公司 | PERC solar cell with passivated and contacted front grid lines and preparation method thereof |
| WO2021068644A1 (en) * | 2019-10-12 | 2021-04-15 | 通威太阳能（成都）有限公司 | Efficient back passivation crystalline silicon solar cell and manufacturing method therefor |
| WO2021093387A1 (en) * | 2019-11-14 | 2021-05-20 | 通威太阳能（成都）有限公司 | P-type bifacial solar cell with partial rear surface field passivation and preparation method therefor |
| CN112909127A (en) * | 2021-02-04 | 2021-06-04 | 浙江爱旭太阳能科技有限公司 | Preparation method of P-type single crystal passivation contact IBC solar cell |
| JP6916972B1 (en) * | 2021-02-23 | 2021-08-11 | ジョジアン ジンコ ソーラー カンパニー リミテッド | Solar cells and their manufacturing methods, solar cell modules |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI662715B (en) * | 2017-10-27 | 2019-06-11 | 財團法人工業技術研究院 | Solar cell |
-
2021
- 2021-12-28 CN CN202111622495.8A patent/CN114464686B/en active Active
Patent Citations (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2010119512A1 (en) * | 2009-04-14 | 2010-10-21 | 三菱電機株式会社 | Photovoltaic device and method for manufacturing the same |
| JP2011222630A (en) * | 2010-04-06 | 2011-11-04 | Mitsubishi Electric Corp | Manufacturing method for photovoltaic device |
| KR20130119569A (en) * | 2012-04-24 | 2013-11-01 | 에스티엑스 솔라주식회사 | Method for menufacture the bifacial solar cell |
| JP2014154619A (en) * | 2013-02-06 | 2014-08-25 | Sharp Corp | Method for manufacturing photoelectric conversion element |
| JP2014220346A (en) * | 2013-05-07 | 2014-11-20 | 株式会社村田製作所 | Solar cell and method of manufacturing the same |
| EP2922101A1 (en) * | 2014-03-19 | 2015-09-23 | Institut für Solarenergieforschung GmbH | Conductive polymer/Si interfaces at the backside of solar cells |
| US9293611B1 (en) * | 2014-09-24 | 2016-03-22 | Huey-Liang Hwang | Solar cell structure and method for fabricating the same |
| JP2016146471A (en) * | 2015-01-29 | 2016-08-12 | 三菱電機株式会社 | Method of manufacturing solar battery |
| CN110061083A (en) * | 2019-02-19 | 2019-07-26 | 东方日升（常州）新能源有限公司 | A kind of full-frontal passivation contacts the preparation method of efficient p-type crystal silicon solar battery |
| CN110034193A (en) * | 2019-04-04 | 2019-07-19 | 国家电投集团西安太阳能电力有限公司 | A kind of how thin grid IBC battery of Topcon passivating structure and preparation method thereof |
| CN109980022A (en) * | 2019-04-24 | 2019-07-05 | 通威太阳能（成都）有限公司 | A kind of p-type tunneling oxide passivation contact solar cell and preparation method thereof |
| CN209561421U (en) * | 2019-04-24 | 2019-10-29 | 通威太阳能（成都）有限公司 | A kind of p-type tunneling oxide passivation contact solar cell |
| WO2020220394A1 (en) * | 2019-04-29 | 2020-11-05 | 南通天盛新能源股份有限公司 | Double-sided power generation solar cell and fabricating method therefor |
| CN110233180A (en) * | 2019-06-02 | 2019-09-13 | 苏州腾晖光伏技术有限公司 | The preparation method of p-type back side tunnel oxide passivation contact solar cell |
| CN110459638A (en) * | 2019-06-05 | 2019-11-15 | 国家电投集团西安太阳能电力有限公司 | A kind of IBC battery and preparation method thereof of Topcon passivation |
| WO2021068644A1 (en) * | 2019-10-12 | 2021-04-15 | 通威太阳能（成都）有限公司 | Efficient back passivation crystalline silicon solar cell and manufacturing method therefor |
| WO2021093387A1 (en) * | 2019-11-14 | 2021-05-20 | 通威太阳能（成都）有限公司 | P-type bifacial solar cell with partial rear surface field passivation and preparation method therefor |
| CN112186049A (en) * | 2020-10-28 | 2021-01-05 | 天合光能股份有限公司 | PERC solar cell with passivated and contacted front grid lines and preparation method thereof |
| CN112909127A (en) * | 2021-02-04 | 2021-06-04 | 浙江爱旭太阳能科技有限公司 | Preparation method of P-type single crystal passivation contact IBC solar cell |
| JP6916972B1 (en) * | 2021-02-23 | 2021-08-11 | ジョジアン ジンコ ソーラー カンパニー リミテッド | Solar cells and their manufacturing methods, solar cell modules |
Also Published As
| Publication number | Publication date |
|---|---|
| CN114464686A (en) | 2022-05-10 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN109994570B (en) | Preparation method of efficient P-type passivated contact crystalline silicon solar cell | |
| CN115621333B (en) | Back contact solar cell passivated by double-sided tunneling silicon oxide and preparation method thereof | |
| CN113363354B (en) | Preparation method of P-type back contact type crystalline silicon solar cell | |
| CN110265497B (en) | N-type crystalline silicon solar cell with selective emitter and preparation method thereof | |
| US20120222731A1 (en) | Heterojunction Solar Cell Having Amorphous Silicon Layer | |
| CN209232797U (en) | Silica-based solar cell and photovoltaic module | |
| CN105405899A (en) | N-type double-side battery and manufacturing method thereof | |
| CN111416017A (en) | Preparation method of passivated contact solar cell | |
| CN102403369A (en) | Passivation dielectric film for solar cell | |
| CN108172658B (en) | A kind of preparation method of N-type hetero-junctions double-sided solar battery | |
| CN103346214B (en) | A kind of silica-based radial homogeneity heterojunction solar cell and preparation method thereof | |
| CN112599636B (en) | Preparation method of crystalline silicon solar cell and crystalline silicon solar cell | |
| CN110571302A (en) | preparation method of N-type crystalline silicon battery | |
| CN110148636A (en) | A kind of solar battery and preparation method thereof, photovoltaic module | |
| CN111477720A (en) | Passivated contact N-type back junction solar cell and preparation method thereof | |
| CN112349802B (en) | Manufacturing method of ingot casting single crystal or polycrystalline amorphous silicon heterojunction solar cell | |
| CN114464687B (en) | Local double-sided tunneling passivation contact structure battery and preparation method thereof | |
| CN110660883A (en) | Preparation method of solar cell and solar cell | |
| CN114005888A (en) | Solar cell and preparation method thereof | |
| CN210778636U (en) | Back contact solar cell with multiple tunnel junction structures | |
| CN209183556U (en) | Silica-based solar cell and photovoltaic module | |
| CN115274913B (en) | Preparation method of IBC solar cell with passivation contact structure, and cell, component and system | |
| CN110571303A (en) | Preparation method of P-type crystalline silicon cell | |
| CN110534614B (en) | Preparation method of P-type crystalline silicon cell | |
| CN218585997U (en) | Solar cell of P-type silicon |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |