CN110148636A - A kind of solar battery and preparation method thereof, photovoltaic module - Google Patents
A kind of solar battery and preparation method thereof, photovoltaic module Download PDFInfo
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- CN110148636A CN110148636A CN201910406861.2A CN201910406861A CN110148636A CN 110148636 A CN110148636 A CN 110148636A CN 201910406861 A CN201910406861 A CN 201910406861A CN 110148636 A CN110148636 A CN 110148636A
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/02002—Arrangements for conducting electric current to or from the device in operations
- H01L31/02005—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier
- H01L31/02008—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier for solar cells or solar cell modules
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
- H01L31/1868—Passivation
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention discloses a kind of solar batteries and preparation method thereof, photovoltaic module.Wherein, solar battery includes silicon substrate (1), and the regional area on silicon substrate (1) surface is doped region (2), and being located at the region other than the doped region (2) is undoped region (3)；Passivation dielectric layer (4), the passivation dielectric layer (4) are arranged on the undoped region (3)；Semiconductor film layer (5), the semiconductor film layer (5) be arranged on the passivation dielectric layer (4) and, electrode (6), the electrode (6) contacts with the doped region (2).The undoped region field surface that the silicon thin film of passivation dielectric layer and doping is used for local back surface field battery is carried out surface passivation by the battery, can promote the passivation effect of solar battery.The preparation method of above-mentioned solar battery provided by the invention can mutually be taken into account with prior art, at low cost.
Description
This application claims in submission on November 27th, 2018 China State Intellectual Property Office, application No. is
The Chinese patent application of 201811427296.X, entitled " a kind of solar battery and preparation method thereof, photovoltaic module "
Priority, entire contents are hereby incorporated by reference in the application.
Technical field
The invention belongs to technical field of solar batteries, and in particular to a kind of solar battery and preparation method thereof, photovoltaic
Component.
Background technique
To obtain efficient solar battery, surface must have good passivation, lower surface recombination speed
Rate, and then can obtain and higher open pressure, electric current and efficiency.Since the surface concentration of the silicon substrate after doping is higher, therefore it is passivated
Effect is not that very well, and just very low silicon substrate is passivated to undoped concentration itself after the silicon substrate of doping, so that it may
With obtain good surface passivation and it is very high virtually open pressure and minority carrier life time, therefore produce locally adulterate local back surface field electricity
Pond.For N-type silicon substrate, mainly silica, silicon nitride, silicon oxynitride, aluminium oxide etc. single layers or more of surface passivation at present
Layer dielectric structure, double-sided symmetrical structure virtually open pressure and can achieve 710mV or so.For the battery knot of N-type local back surface field
For structure, since it is locally adulterated, and then electric current lateral transport is influenced, the fill factor of battery is not also high, therefore battery is imitated
Rate is also subject to certain restrictions；Finally, silicon substrate body resistivity influences also efficiency very greatly, to propose very high want to raw material resistivity
It asks, and the separation of the crystal pulling of N-type cell itself is just big, resistivity distribution is wide, to can obtain height on a crystal bar
The silicon wafer of efficiency is extremely limited.
And in recent years, passivation contact is concerned in crystal-silicon solar cell field, and each research institution has also been developed more
To be efficiently passivated contact solar cell, mainly it is utilized on silicon substrate and directly grows layer of oxide layer, and in oxide layer
The polysilicon membrane of upper one layer of doping of preparation.Wherein, the polysilicon membrane of doping can play good electric conductivity, can solve
Certainly lateral transport problem；In addition, being passivated N-type silicon substrate surface using this structure, double-sided symmetrical structure is virtually opened pressure and be can reach
740mV is 30mV higher than the passivation effect of conventional passivation oxide superposition silicon nitride or so.But due to polysilicon membrane particle
It is small, intergranular is more so that polysilicon membrane is more difficult to obtain higher doping concentration, limit the raising of solar battery efficiency.
Summary of the invention
The purpose of the present invention is to provide a kind of high conversion efficiencies, at low cost, the simple solar battery of preparation process.
The object of the invention is also to provide the preparation method of above-mentioned solar battery, this method can be mutually simultaneous with prior art
It cares for, it is at low cost.
The object of the invention is also to provide the photovoltaic modulies based on above-mentioned solar battery.
Above-mentioned first purpose of the invention is achieved through the following technical solutions:
A kind of solar battery, comprising:
Silicon substrate, the regional area on the silicon substrate surface are doped region, the region other than the doped region
For undoped region；
Passivation dielectric layer, the passivation dielectric layer are arranged on the undoped region；
Semiconductor film layer, the semiconductor film layer are arranged on the passivation dielectric layer；
And
Electrode, the electrode are contacted with the doped region.
Optionally, the semiconductor film layer is silicon membrane layer.
Optionally, the silicon membrane layer is intrinsic silicon membrane layer.
Optionally, the silicon membrane layer is doped silicon film layer, and the conduction type of the silicon membrane layer and the doping
The conduction type in region is identical.
Optionally, the doped region is located in a side surface of the silicon substrate, the conduction type of the doped region
It is identical as the conduction type of the silicon substrate, surface field of the doped region as the solar battery；
The solar battery further include: setting is in another side surface of the silicon substrate, conduction type and the silicon substrate
The opposite emitter layer of conduction type.
Optionally, the doped region is located in a side surface of the silicon substrate, the conduction type of the doped region
Conduction type with the silicon substrate is on the contrary, emitter of the doped region as the solar battery；
The solar battery further include: setting is in another side surface of the silicon substrate, conduction type and the silicon substrate
The identical surface field layer of conduction type.
Optionally, the figure of the doped region is identical as the figure of the electrode and position is corresponding.
Optionally, the doped region and the electrode are in line style, and the width of the electrode is slightly larger than the doped region
The width in domain.
Optionally, on the semiconductor film layer and antireflection layer, the electrode are additionally provided on the doped region
It is arranged on the antireflection layer, and the electrode passes through the antireflection layer and contacts with the doped region.
Optionally, the doping concentration of the doped region is 1.0E20atoms/cm3~2.0E21atoms/cm3, doping
Depth is 0.1~2 μm.
Optionally, the silicon membrane layer is one of layer polysilicon film, microcrystalline silicon film layer and amorphous thin Film layers
Or several stack membranes, with a thickness of 5nm~500nm.
In addition, the semiconductor film layer is also possible to other semiconductor material with wide forbidden band.
Optionally, the antireflection layer is silicon nitride layer, silicon oxide layer, silicon carbide layer, a kind of single layer in silicon oxynitride layer
Film or several stack membranes.
Optionally, the passivation dielectric layer is a kind of monofilm or several in silica, aluminium oxide, titanium oxide and silicon oxynitride
The stack membrane of kind, with a thickness of 0.5nm~2.5nm.
Optionally, the electrode is metal electrode.
Optionally, the surface of the silicon substrate is the combination of one or more of making herbs into wool face, etching face and burnishing surface.
Above-mentioned second purpose of the invention is achieved through the following technical solutions.
A kind of preparation method of solar battery, comprising the following steps:
S1: silicon substrate is provided；
Passivation dielectric layer is arranged on the silicon substrate in S2；
S3: semiconductive thin film is set on passivation dielectric layer；
S4: the semiconductive thin film and passivation dielectric layer for removing predetermined position expose the local surfaces of the silicon substrate；
S5: the region exposed to the silicon substrate surface is doped, and is formed in the region that the silicon substrate surface is exposed
Doped region, the silicon substrate surface are undoped region by the region that the semiconductive thin film and the passivation dielectric layer cover
Domain；
S6: the electrode contacted with the doped region is formed.
Further, between step S5 and step S6, the preparation method further include: in doped region and semiconductor film
Antireflection layer is set on film.
It optionally, may include being cleaned to silicon substrate in step S1, to the progress making herbs into wool of silicon substrate front.
Optionally, step S2 uses low temperature boiler tube oxidation technology, nitric acid oxidation process, ozonation technology, ALD (atom
Layer deposition), CVD (chemical vapour deposition technique, such as PECVD (vapour deposition process of plasma enhanced chemical), LPCVD (low-pressure
Chemical vapour deposition technique) or PVD (physical vapor deposition technology, such as sputtering, evaporation) preparation passivation Jie on silicon substrate surface
Matter layer.
Optionally, Low Pressure Chemical Vapor Deposition (LPCVD) is used in step S3 on the surface of passivation dielectric layer or is waited
Plasma enhanced chemical vapor sedimentation (PECVD) deposited semiconductor film layer.
Optionally, in step S4 using picosecond, submicrosecond or nanosecond laser carry out out film removal predeterminable area semiconductor film
Film and below corresponding passivation dielectric layer, optionally, predeterminable area are regions corresponding with Metal contact electrode.
Optionally, it is doped in step S5 using ion implanting or method of diffusion.During doping, can partly it lead
Body thin film surface and the silicon substrate surface of exposing form the oxide layer containing doped source, and the solution such as hydrofluoric acid (HF aqueous solution) can be used
By the oxide layer removal containing doped source.
Optionally, use tubular type or board-like plasma reinforced chemical vapour deposition method (PECVD) in semiconductor in the present invention
The surface in film surface and silicon substrate local doped region domain forms antireflection layer.
Optionally, the top setting metal electricity in step S6 using screen printing mode in silicon substrate local doped region domain
Pole.
Above-mentioned third purpose of the invention is achieved through the following technical solutions.
A kind of photovoltaic module, comprising: cover board, the first packaging adhesive film set gradually, battery strings, the second packaging adhesive film and back
Plate, the battery strings include multiple solar batteries, and the solar battery is above-mentioned solar battery.
The beneficial effect of technical solution provided by the invention includes at least:
(1) present invention improves passivation effect of the silicon substrate undoped with region using passivation dielectric layer and semiconductive thin film,
Minority carrier life time can be improved, that improves local back surface field battery virtually opens pressure；It can laterally be led when especially with doped silicon film
Electricity can not only improve electric current lateral transport, can also improve the virtual fill factor of battery；
(2) passivation dielectric layer and semiconductive thin film are used to carry out surface passivation, electricity to undoped with region surface by the present invention
Pole is then contacted with the doped region of silicon substrate, with existing electrode compared with the battery that doped silicon film contacts, silicon in the present invention
Matrix can be relatively easy to obtain higher doping concentration, and therefore, solar battery provided by the invention is improving efficiency
Meanwhile also helping the production cost for reducing solar battery.
(3) present invention separates passivation non-contact area and contact area, and contact area, which carries out normal doping, can achieve
Good contact, meanwhile, which is also able to achieve the good passivation effect of non-contact passive area, without on its surface
Contact the requirement also with regard to relative reduction silicon thin film to doping.
Detailed description of the invention
To describe the technical solutions in the embodiments of the present invention more clearly, make required in being described below to embodiment
Attached drawing is briefly described.
Fig. 1 is the structural schematic diagram of the N-type solar battery in embodiment 1；
Fig. 2 is the preparation flow figure of the N-type solar battery in embodiment 1；
Fig. 3 is the N-type solar battery schematic diagram locally adulterated that silicon nitride film is arranged in embodiment 2-4；
Fig. 4 is the preparation flow figure of N-type solar battery in embodiment 2-4
Fig. 5 is the solar battery schematic diagram prepared after passivation dielectric layer in embodiment 2-4；
Fig. 6 is the solar battery schematic diagram prepared after silicon thin film in embodiment 2-4；
Fig. 7 is that the laser in embodiment 2-4 opens the solar battery schematic diagram after film；
Fig. 8 is the solar battery schematic diagram after the phosphorus doping in embodiment 2-4；
Fig. 9 is the solar battery schematic diagram prepared after silicon nitride film in embodiment 2-4.
Appended drawing reference in figure respectively indicates:
1 is silicon substrate；
2 be doped region；
3 be undoped region；
4 be passivation dielectric layer；
5 be semiconductor film layer；
6 be electrode；
7 be antireflection layer.
Specific embodiment
With reference to Fig. 1, solar battery provided by the invention includes:
Silicon substrate 1, the regional area on 1 surface of silicon substrate are doped region 2, and the region other than doped region 2 is non-
Doped region 3；
Passivation dielectric layer 4, passivation dielectric layer 4 are arranged on undoped region 3；
Semiconductor film layer 5, semiconductor film layer 5 are arranged on passivation dielectric layer 4；
And electrode 6, electrode 6 are contacted with doped region 2.
On the one hand solar battery provided by the invention improves silicon substrate using passivation dielectric layer and semiconductive thin film not
Minority carrier life time can be improved in the passivation effect of doped region, and that improves local back surface field battery virtually opens pressure；Especially with doping
It can not only improve electric current lateral transport when silicon thin film with transverse conductance, the virtual fill factor of battery can also be improved；Separately
On the one hand by passivation dielectric layer and semiconductive thin film be used for undoped with region surface carry out surface passivation, electrode then with silicon substrate
Doped region contact, with existing electrode compared with the battery that doped silicon film contacts, silicon substrate can be relatively easy to obtain
Higher doping concentration is obtained, therefore, solar battery provided by the invention also helps the reduction sun while improving efficiency
The production cost of energy battery.
In the present invention, doped region 2 and undoped region 3 can alternate distribution.
In the present invention, semiconductor film layer 5 can be silicon membrane layer, and silicon membrane layer is either undoped intrinsic silicon is thin
Film layer is also possible to adulterate silicon thin layer, the conduction type of doped silicon film layer and the conductive-type of 1 surface doped region 2 of silicon substrate
Type is identical.
Silicon membrane layer can be one of polysilicon membrane, microcrystalline silicon film and amorphous silicon membrane or several laminations
Film, with a thickness of 5nm~500nm, such as 5nm, 50nm, 100nm, 150nm, 200nm, 250nm, 300nm, 350nm, 400nm,
450nm, 500nm etc..
In the present invention, the figure of doped region 2 has part corresponding with the graph position of electrode 6, to make
Electrode 6 can be contacted with doped region 2, preferably, the figure of doped region 2 can and position identical as the figure of electrode 6
It is corresponding.
The figure of doped region 2 can be multiple round, multiple three arranged in the form of an array arranged in the form of an array
It is angular, rectangular etc., it is also possible to a plurality of straight line etc. according to certain rule arrangement.
Preferably, doped region 2 and electrode 6 are in line style, the width of electrode 6 is slightly larger than the width of doped region 2.With
Can cover doped region 2 and it is slightly wider be advisable, exemplary, the width of electrode 6 is slightly wider by 5 than the width in local doped region domain 2
~40 μm, such as 5 μm, 15 μm, 20 μm, 25 μm, 30 μm, 35 μm, 40 μm etc..
In the present invention, electrode 6 can be arranged directly on semiconductor film layer 5 (as shown in Figure 1), can also be in semiconductor
Antireflection layer 7 is set in film layer 5 and on doped region 2, and electrode 6 is arranged on antireflection layer 7, at this point, electrode 6 passes through anti-reflection
It penetrates layer 7 and contacts (as shown in Figure 3) with doped region 2.
Antireflection layer 7 can be a kind of list in silicon nitride layer, silicon oxide layer, silicon carbide layer, silicon oxynitride layer in the present invention
Tunic or several stack membranes.
About doped region 2 in solar battery provided by the invention conduction type and silicon substrate 1 conduction type it
Between relationship, have following several possible implementations.
In one possible implementation, doped region 2 is located in a side surface of silicon substrate 1, and doped region 2 is led
Electric type is identical as the conduction type of silicon substrate 1, i.e. surface field of the doped region 2 as solar battery；At this point, solar-electricity
Pond further include: another side surface of silicon substrate 1, the conduction type emitter layer opposite with the conduction type of silicon substrate 1 (hair are set
The all surfaces of emitter layer covering silicon substrate).
In this implementation, passivated reflection reducing can be set on emitter layer and penetrate layer (such as silicon nitride layer) and electrode.
In this implementation, when the conduction type N-type of silicon substrate 1, the conduction type of doped region 2 is N-type (V
Race's element such as phosphorus doping), the conduction type of doped silicon film layer is also N-type, and the conduction type of emitter layer is p-type (Section III
Race's element such as boron doping)；When the conduction type p-type of silicon substrate 1, the conduction type of doped region 2 is p-type (III-th family member
Plain such as boron doping), the conduction type of doped silicon film layer is also p-type, and the conduction type of emitter layer is N-type (group V element
Such as phosphorus doping).
Doped region (2) can be located at the front (i.e. light-receiving surface) of silicon substrate, as front-surface field；Silicon substrate can also be located at
The back side (i.e. shady face) of body, as back surface field (i.e. local back surface field structure).
In alternatively possible implementation, doped region 2 is located in a side surface of silicon substrate 1, doped region 2
The conduction type of conduction type and silicon substrate 1 is on the contrary, i.e. emitter of the doped region 2 as solar battery；At this point, solar energy
Battery further include: another side surface of silicon substrate 1, conduction type surface field layer identical with the conduction type of silicon substrate 1 are set
(surface field layer covers 1 all surfaces of silicon substrate).
In this implementation, passivated reflection reducing can be set on surface field layer and penetrates layer (such as silicon nitride layer) and electrode.
In this implementation, when the conduction type N-type of silicon substrate 1, the conduction type of doped region 2 is N-type (V
Race's element such as phosphorus doping), the conduction type of doped silicon film layer is also N-type, and the conduction type of emitter layer is p-type (Section III
Race's element such as boron doping)；When the conduction type p-type of silicon substrate 1, the conduction type of doped region 2 is p-type (III-th family member
Plain such as boron doping), the conduction type of doped silicon film layer is also p-type, and the conduction type of emitter layer is N-type (group V element
Such as phosphorus doping).
Doped region (2) can be located at the front (i.e. light-receiving surface) of silicon substrate, as front-surface field；Silicon substrate can also be located at
The back side (i.e. shady face) of body, as back surface field (i.e. local back surface field structure).
Certainly, the present invention in, can the both side surface of silicon substrate 1 be respectively provided with above-mentioned doped region 2, passivation dielectric layer 4,
The structure of semiconductor film layer 5.It is understood that the conduction type of the doped region 2 of two sides on the contrary, wherein with silicon substrate 1
Emitter of the anti-doped region 2 of conduction type as solar battery, doped region 2 identical with 1 conduction type of silicon substrate
Surface field as solar battery.
Further, the doping concentration of doped region 2 is 1.0E in the present invention20atoms/cm3~2.0E21atoms/cm3,
Such as 1.0E20atoms/cm3、2.0E20atoms/cm3、4.0E20atoms/cm3、5.0E20atoms/cm3、6.0E20atoms/
cm3、8.0E20atoms/cm3、9.0E20atoms/cm3、1.0E21atoms/cm3、1.2E21atoms/cm3、1.4E21atoms/
cm3、1.5E21atoms/cm3、1.6E21atoms/cm3、1.8E21atoms/cm3、2.0E21atoms/cm3Deng the depth of doping
Be 0.1~2 μm, for example, 0.1 μm, 0.2 μm, 0.4 μm, 0.5 μm, 0.6 μm, 0.8 μm, 1.0 μm, 1.2 μm, 1.4 μm, 1.5 μm,
1.6 μm, 1.8 μm, 2.0 μm etc..
Passivation dielectric layer 4 can be monofilm a kind of in silica, aluminium oxide, titanium oxide and silicon oxynitride or several folded
Tunic, with a thickness of 0.5nm~2.5nm, such as 0.5nm, 0.6nm, 0.8nm, 1.0nm, 1.2nm, 1.4nm, 1.5nm,
1.6nm, 1.8nm, 2.0nm, 2.2nm, 2.4nm, 2.5nm etc..
In the present invention, the surface of silicon substrate 1 is the combination of one or more of making herbs into wool face, etching face and burnishing surface.
In the present invention, electrode 6 contacts the contact surface it is understood that between electrode 6 and doped region 2 with doped region 2
Resistance value be much smaller than silicon substrate 1 resistance value.For example, when electrode 5 is metal electrode (such as silver electrode), metal electricity
Europe Ohmic contact should be formed between pole and doped region 2.
The present invention also provides the preparation methods of above-mentioned solar battery, as shown in Fig. 2, the preparation method includes following
Step:
S1: silicon substrate 1 is provided；
Passivation dielectric layer 4 is arranged in S2 on silicon substrate 1；
S3: semiconductive thin film is set on passivation dielectric layer 4；
S4: the semiconductive thin film and passivation dielectric layer 4 for removing predetermined position expose the local surfaces of silicon substrate 1；
S5: the region exposed to 1 surface of silicon substrate is doped, and forms doped region in the region that 1 surface of silicon substrate is exposed
Domain 2, the region that 1 surface of silicon substrate is covered by semiconductive thin film and passivation dielectric layer 4 are undoped region 3；
S6: the electrode 6 contacted with doped region 2 is formed.
In preparation method of the invention, when using doped silicon film, formed in step s3 first undoped intrinsic
Silicon thin film is doped the region that 1 surface of silicon substrate is exposed during forming doped region 2 later in step s 5, right
Intrinsic silicon thin film is doped to form doped silicon film simultaneously.
Further, between step S5 and step S6, preparation method provided by the invention further include: in doped region 2
With setting antireflection layer 7 on semiconductive thin film.
It may include being cleaned to silicon substrate 1 in step S1 in the present invention, the step such as making herbs into wool carried out to 1 front of silicon substrate
Suddenly.
Step S2 can use low temperature boiler tube oxidation technology, nitric acid oxidation process, ozonation technology, ALD (atomic layer deposition
Product), CVD (chemical vapour deposition technique, as PECVD (vapour deposition process of plasma enhanced chemical), LPCVD (low-pressure chemistry
Vapour deposition process) or PVD (physical vapor deposition technology, such as sputtering, evaporation) on 1 surface of silicon substrate prepare dielectric passivation
Layer.
Low Pressure Chemical Vapor Deposition (LPCVD) or plasma can be used in step S3 on the surface of passivation dielectric layer
Enhance chemical vapour deposition technique (PECVD) deposited semiconductor film layer.
In step S4 can using picosecond, submicrosecond or nanosecond laser carry out out film removal predeterminable area semiconductive thin film and
Corresponding passivation dielectric layer below.It is understood that remaining semiconductive thin film and passivation dielectric layer correspond to undoped region
Domain 3.In addition, as described above, predeterminable area can be region corresponding with Metal contact electrode.
It can be doped using ion implanting or method of diffusion in step S5.It, can be in semiconductor during doping
The silicon substrate surface of film surface and exposing forms the oxide layer (such as phosphorosilicate glass or Pyrex) containing doped source, can adopt
The oxide layer containing doped source is removed with solution such as hydrofluoric acid (HF aqueous solution).
It, can be using tubular type or board-like plasma reinforced chemical vapour deposition method (PECVD) in semiconductor film in the present invention
The surface in film surface and silicon substrate local doped region domain forms antireflection layer.
Metal electrode can be arranged in the top in silicon substrate local doped region domain using screen printing mode in step S6.
Based on above-mentioned solar battery, the present invention also provides the photovoltaic modulies of the above-mentioned solar battery of application.The light
Lying prostrate component includes the cover board set gradually, the first packaging adhesive film, battery strings, the second packaging adhesive film and backboard, wherein battery strings packet
Include multiple solar batteries provided in an embodiment of the present invention.
In the present invention, cover board is glass plate, and the material of the first packaging adhesive film and the second packaging adhesive film can be EVA (second
Alkene-acetate ethylene copolymer) or POE (ethylene-octene copolymer), backboard can be glass plate, or TPT
(PVF/PET/PVF) plate.Photovoltaic module further includes frame, and sealant (such as silica gel) can be filled in frame.
Below using silicon substrate as N-type silicon substrate, the setting of local doped region domain 2 is at the silicon substrate back side as local back surface field
For, further details of the technical solution of the present invention.
Embodiment 1
As shown in Figure 1, N-type solar battery provided in this embodiment, the N-type solar-electricity locally adulterated for silicon substrate
Pond, including N-type silicon substrate 1 are equipped with local doped region domain 2 and undoped region 3 at the back side of N-type silicon substrate 1, in silicon substrate 1
Undoped region 3 surface be equipped with passivation dielectric layer 4, on passivation dielectric layer 4 be equipped with doping silicon thin film, locally mix
Miscellaneous region 2 is equipped with electrode 6.
The surface of N-type silicon substrate 1 is making herbs into wool face.
Doped region 2 and undoped region 3 on silicon substrate 1 alternate distribution.
The silicon thin film of doping is specially the amorphous silicon membrane adulterated, with a thickness of 200nm, doped chemical and local doped region domain
2 doped chemical is identical, and doped chemical is phosphorus.
The doping concentration in local doped region domain 2 is 1.0E20atoms/cm3~2.0E21atoms/cm3, the depth of doping is
0.1~2 μm.
Passivation dielectric layer 4 is silicon dioxide layer, with a thickness of 1.5nm.
Electrode 6 is Metal contact electrode, and the slurry of Metal contact electrode can be low-temperature pulp, such as the C7557 of Du Pont
Deng being also possible to other slurries, only enumerate and be not defined herein.
The preparation method for the N-type solar battery that the silicon substrate locally adulterates is made based on low pressure chemical deposition (LPCVD)
Standby passivation dielectric layer (SiO2) and amorphous silicon membrane, the local doped region domain of silicon substrate and polysilicon membrane doping way are phosphorus expansion
It dissipates.
As shown in Fig. 2, the preparation method for the N-type solar battery that the silicon substrate locally adulterates, comprising the following steps:
A, passivation dielectric layer is prepared: to silicon wafer after cleaning using growth in situ in low pressure chemical deposition (LPCVD) equipment
1 (the SiO of passivation dielectric layer of 1.5nm2), as shown in Figure 5；
B, amorphous silicon membrane is prepared: after low pressure chemical deposition (LPCVD) growth of passivation dielectric layer 1, in same equipment
In, it is 620 DEG C of growths, one layer of 200nm amorphous silicon membrane in temperature, as shown in Figure 6；
C, laser: the region for needing to do metal contact is subjected to laser using picosecond laser and opens film, by local doped region
Corresponding amorphous silicon membrane removal on domain 2, as shown in Figure 7；
D, it adulterates: silicon wafer is placed in phosphorus diffusion boiler tube, open laser the silicon in diaphragm area (corresponding local doped region domain 2)
Matrix and remaining amorphous silicon membrane surface carry out phosphorus doping, while this high-temperature step also achieves the amorphous to LPCVD growth
Silicon thin film has carried out crystallization and thermal treatment, further promotes the performance of the film, forms the silicon thin film in local doped region domain 2 and doping
5, corresponding 5 lower section of silicon thin film of doping is non-doped region 3；
E, phosphorosilicate glass is removed: the oxygen that will be grown after diffusion in amorphous silicon membrane and silicon substrate surface by HF chemical solution
Change layer to be removed, as shown in Figure 8；
F, it prepares Metal contact electrode: being arranged above the local doped region domain 2 of silicon substrate by the way of silk-screen printing
Metal contact electrode 6, the width of Metal contact electrode 6 open the width of film slightly larger than laser, as shown in Figure 1.
Embodiment 2
As shown in figure 3, N-type solar battery provided in this embodiment, the N-type solar-electricity locally adulterated for silicon substrate
Pond, including N-type silicon substrate 1 are equipped with local doped region domain 2 and undoped region 3 on one of surface of N-type silicon substrate 1,
3 surface of undoped region of silicon substrate 1 is equipped with passivation dielectric layer 4, and the silicon thin film 5 of doping is equipped on passivation dielectric layer 4,
The silicon thin film 5 of doping and the local doped region domain 2 of silicon substrate 1 are equipped with silicon nitride film 7, in the local doped region of silicon substrate 1
Metal contact electrode 6 is equipped with above domain 2.
Metal contact electrode 6 is set on silicon nitride film 7 and corresponding with the position in local doped region domain 2.
The local doped region domain 2 and undoped region 3 of silicon substrate 1 alternate distribution.
Passivation dielectric layer 4 is silicon dioxide layer, with a thickness of 1.5nm.
Silicon thin film is polysilicon membrane, layer polysilicon film with a thickness of 200nm.
The preparation method for the N-type solar battery that the silicon substrate locally adulterates is made based on low pressure chemical deposition (LPCVD)
Standby passivation dielectric layer (SiO2) and polysilicon membrane, the local doped region domain of silicon substrate and polysilicon membrane doping way are phosphorus expansion
It dissipates.
As shown in figure 4, the preparation method for the N-type solar battery that the silicon substrate locally adulterates, comprising the following steps:
A, passivation dielectric layer is prepared: to silicon wafer after cleaning using growth in situ in low pressure chemical deposition (LPCVD) equipment
Dielectric layer (the SiO of 1.5nm2), as shown in Figure 5；
C, polysilicon membrane is prepared: after low pressure chemical deposition (LPCVD) growth of passivation dielectric layer, in same equipment
In, it is 620 DEG C of growths, one layer of 200nm polysilicon membrane in temperature, as shown in institute Fig. 6；
D, laser: the region for needing to do metal contact is subjected to laser using picosecond laser and opens film, by regional area
Polysilicon membrane removal, as shown in Figure 7；
E, it adulterates: silicon wafer being placed in phosphorus diffusion boiler tube, the silicon substrate and remaining polysilicon of diaphragm area are opened laser
Film surface carries out phosphorus doping, while this high-temperature step also achieves and carried out crystallization heat to the polysilicon membrane of LPCVD growth
Processing, further promotes the performance of the film；
F, phosphorosilicate glass is removed: the oxygen that will be grown after diffusion in polysilicon membrane and silicon substrate surface by HF chemical solution
Change layer to be removed, as shown in Figure 8；
G, prepared by silicon nitride film: by board-like plasma reinforced chemical vapour deposition method (PECVD) in polysilicon membrane
And one layer of 80nm silicon nitride layer of regrowth on silicon substrate surface, as shown in Figure 9；
H, it prepares Metal contact electrode: metal being set above the domain of silicon substrate local doped region by the way of silk-screen printing
Electrode is contacted, Metal contact electrode width opens the width of film slightly larger than laser, as shown in Figure 3.
Embodiment 3
The structure of the N-type solar battery is the same as embodiment 2.
The preparation method for the N-type solar battery that the silicon substrate locally adulterates is that one layer of oxidation is prepared based on chemical oxidation
Layer (SiO2) and low pressure chemical deposition (LPCVD) prepare polysilicon membrane, the local doped region domain of silicon substrate and polysilicon membrane
Doping way is ion implanting phosphorus (P).
Wherein passivation dielectric layer is silicon dioxide layer, with a thickness of 1.0nm.
Silicon thin film is polysilicon membrane, layer polysilicon film with a thickness of 150nm.
As shown in figure 4, the preparation method for the N-type solar battery that the silicon substrate locally adulterates, comprising the following steps:
A, it prepares passivation dielectric layer: growing the titanium dioxide of one layer of 1.0nm using chemicals nitric acid oxidation to silicon wafer after cleaning
Silicon, as shown in Figure 5；
B, polysilicon membrane is prepared: after low pressure chemical deposition (LPCVD) growth of passivation dielectric layer, in same equipment
In, it is 610 DEG C of growths, one layer of 150nm polysilicon membrane in temperature, as shown in institute Fig. 6；
C, laser: the region for needing to do metal contact is subjected to laser using picosecond laser and opens film, by regional area
Polysilicon membrane removal, as shown in Figure 7；
D, it adulterates: the silicon substrate of diaphragm area being opened to laser using ion implantation apparatus and remaining polysilicon membrane surface carries out
Phosphorus (P) injection, dopant dose 4E15atoms/cm2, recycle 900 DEG C of temperature to activate doping phosphorus (P), while this is high
Warm step, which is also achieved, has carried out crystallization and thermal treatment to the polysilicon membrane of LPCVD growth, further promotes the performance of the film；
E, phosphorosilicate glass is removed: the oxygen that will be grown after annealing in polysilicon membrane and silicon substrate surface by HF chemical solution
Change layer to be removed, as shown in Figure 8；
F, prepared by silicon nitride film: by board-like plasma reinforced chemical vapour deposition method (PECVD) in polysilicon membrane
And one layer of 100nm silicon nitride layer of regrowth on silicon substrate surface, as shown in Figure 9；
G, it prepares Metal contact electrode: metal being set above the domain of silicon substrate local doped region by the way of silk-screen printing
Electrode is contacted, Metal contact electrode width opens the width of film slightly larger than laser, as shown in Figure 3.
Embodiment 4
The structure of the N-type solar battery is the same as embodiment 2.
The preparation method for the N-type solar battery that the silicon substrate locally adulterates is to prepare one layer based on atomic deposition (ALD)
Silica (SiO2) and titanium oxide (TiO2) lamination ultra-passivation deielectric-coating and plasma-reinforced chemical deposition (PECVD) preparation
Polysilicon membrane, the local doped region domain of silicon substrate and polysilicon membrane doping way are phosphorus diffusion.
Wherein, passivation dielectric layer is silica (SiO2) and titanium oxide (TiO2) stack membrane, with a thickness of 1.5nm.
Silicon thin film is polysilicon membrane, layer polysilicon film with a thickness of 120nm.
As shown in figure 4, the preparation method for the N-type solar battery that the silicon substrate locally adulterates, comprising the following steps:
A, it prepares passivation dielectric layer: using atomic deposition (ALD) prepared by layer of silicon dioxide (SiO to silicon wafer after cleaning2)
With titanium oxide (TiO2) lamination 1.5nm passivation dielectric film, as shown in Figure 5；
C, polysilicon membrane is prepared: after plasma-reinforced chemical deposits (PECVD) growth of passivation dielectric layer, same
It is 620 DEG C of growths, one layer of 120nm polysilicon membrane in temperature, as shown in institute Fig. 6 in equipment；
D, laser: the region for needing to do metal contact is subjected to laser using sodium second laser and opens film, by regional area
Polysilicon membrane removal, as shown in Figure 7；
E, it adulterates: silicon wafer being placed in phosphorus diffusion boiler tube, the silicon substrate and remaining polysilicon of diaphragm area are opened laser
Film surface carries out phosphorus doping, while this high-temperature step also achieves and carried out crystallization heat to the polysilicon membrane of PECVD growth
Processing, further promotes the performance of the film；
F, phosphorosilicate glass is removed: the oxygen that will be grown after diffusion in polysilicon membrane and silicon substrate surface by HF chemical solution
Change layer to be removed, as shown in Figure 8；
G, prepared by silicon nitride film: by board-like plasma reinforced chemical vapour deposition method (PECVD) in polysilicon membrane
And one layer of 40nm silicon nitride layer of regrowth on silicon substrate surface, as shown in Figure 9；
H, it prepares Metal contact electrode: metal being set above the domain of silicon substrate local doped region by the way of silk-screen printing
Electrode is contacted, Metal contact electrode width opens the width of film slightly larger than laser, as shown in Figure 3.
The surface passivation comparison that double-sided symmetrical structure is carried out to the N-type silicon substrate surface of polishing, i.e., first carry out N-type silicon chip
Then polishing treatment carries out surface clean, be finally sequentially prepared silica/polysilicon/nitridation on two surfaces of N-type silicon substrate
Silicon (present invention), conventional local back surface field is aluminium oxide/silicon nitride, then completes entire passivation technology by sintering process.Through
WCT120 test, discovery, which compares conventional local back surface field using the structure in the embodiment of the present invention 2, has higher virtual open circuit electricity
Pressure, lower recombination-rate surface, higher effective minority carrier life time, specific data such as the following table 1:
The silicon substrate surface passivation table of comparisons of N-type solar battery and conventional local back surface field in 1 embodiment of the present invention 2 of table
Taking the above-mentioned ideal embodiment according to the present invention as inspiration, through the above description, relevant staff is complete
It can carry out in various changes and amendments, such as embodiment 1-4 without departing from the scope of the technological thought of the present invention' entirely
The polysilicon membrane of doping can be changed to polysilicon membrane, remaining silicon film surface can not be mixed in preparation method
It is miscellaneous etc..The technical scope of the present invention is not limited to the contents of the specification, it is necessary to according to scope of the claims come really
Its fixed technical scope.
Claims (10)
1. a kind of solar battery, comprising:
Silicon substrate (1), the regional area on silicon substrate (1) surface are doped region (2), be located at the doped region (2) with
Outer region is undoped region (3)；
Passivation dielectric layer (4), the passivation dielectric layer (4) are arranged on the undoped region (3)；
Semiconductor film layer (5), the semiconductor film layer (5) are arranged on the passivation dielectric layer (4)；
And
Electrode (6), the electrode (6) contact with the doped region (2).
2. solar battery according to claim 1, which is characterized in that the semiconductor film layer (5) is silicon membrane layer.
3. solar battery according to claim 1, which is characterized in that the silicon membrane layer be intrinsic silicon membrane layer or
Conduction type doped silicon film layer identical with the conduction type of the doped region (2).
4. solar battery according to claim 1 or 3, which is characterized in that the doped region (2) is located in the silicon
The conduction type of one side surface of matrix (1), the doped region (2) is identical as the conduction type of the silicon substrate (1), described
Surface field of the doped region (2) as the solar battery；
The solar battery further include: setting is in another side surface of the silicon substrate (1), conduction type and the silicon substrate
(1) the opposite emitter layer of conduction type.
5. solar battery according to claim 1 or 3, which is characterized in that the doped region (2) is located in the silicon
One side surface of matrix (1), the conduction type of the doped region (2) and the conduction type of the silicon substrate (1) are on the contrary, described
Emitter of the doped region (2) as the solar battery；
The solar battery further include: setting is in another side surface of the silicon substrate (1), conduction type and the silicon substrate
(1) the identical surface field layer of conduction type.
6. solar battery according to claim 1, which is characterized in that the figure and the electricity of the doped region (2)
The figure of pole (6) is identical and position is corresponding.
7. solar battery according to claim 6, which is characterized in that the doped region (2) and the electrode (6) are equal
In line style, the width of the electrode (6) is slightly larger than the width of the doped region (2).
8. solar battery according to claim 1, which is characterized in that on the semiconductor film layer (5) and described
It is additionally provided on doped region (2) antireflection layer (7), the electrode (6) is arranged on the antireflection layer (7), and the electricity
Pole (6) passes through the antireflection layer (7) and contacts with the doped region (2).
9. a kind of preparation method of solar battery, comprising the following steps:
S1: it provides silicon substrate (1)；
Passivation dielectric layer (4) are arranged on the silicon substrate (1) in S2；
S3: semiconductive thin film is set on passivation dielectric layer (4)；
S4: the semiconductive thin film and passivation dielectric layer (4) for removing predetermined position reveal the local surfaces of the silicon substrate (1)
Out；
S5: the region exposed to the silicon substrate (1) surface is doped, in the region shape that the silicon substrate (1) surface is exposed
At doped region (2), silicon substrate (1) surface is by the region of the semiconductive thin film and the passivation dielectric layer (4) covering
For undoped region (3)；
S6: the electrode (6) contacted with the doped region (2) is formed.
10. a kind of photovoltaic module, comprising: cover board, the first packaging adhesive film set gradually, battery strings, the second packaging adhesive film and back
Plate, the battery strings include multiple solar batteries, which is characterized in that the solar battery is any one of claim 1~8
The solar battery.
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Application publication date: 20190820 |