CN117832329A - Preparation method of efficient TOPCON battery - Google Patents
Preparation method of efficient TOPCON battery Download PDFInfo
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- CN117832329A CN117832329A CN202410056181.3A CN202410056181A CN117832329A CN 117832329 A CN117832329 A CN 117832329A CN 202410056181 A CN202410056181 A CN 202410056181A CN 117832329 A CN117832329 A CN 117832329A
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- 229910052710 silicon Inorganic materials 0.000 claims abstract description 105
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- 238000000151 deposition Methods 0.000 claims abstract description 12
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- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims abstract description 10
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- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 14
- 239000004952 Polyamide Substances 0.000 claims description 13
- 239000005388 borosilicate glass Substances 0.000 claims description 13
- 229920003086 cellulose ether Polymers 0.000 claims description 13
- 229920002647 polyamide Polymers 0.000 claims description 13
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 12
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Abstract
The application relates to the technical field of photovoltaics, and provides a preparation method of a high-efficiency TOPCO battery, which comprises the following steps: performing texture making on the silicon wafer, cleaning the silicon wafer after texture making, and drying; vacuumizing a furnace tube, then placing the silicon wafer into the furnace tube for baking, detecting leakage of the furnace tube, and when the furnace tube does not leak, screen printing boron diffusion slurry on the front surface of the silicon wafer, sending the boron diffusion slurry into the furnace tube for baking, and performing thermal diffusion to form a boron diffusion surface; cleaning the back and four sides of the silicon wafer with hydrofluoric acid solution; polishing a silicon wafer, and preparing a SiO2 tunneling oxide layer and a polycrystalline silicon layer on the back surface of the silicon wafer; placing the silicon wafer in a furnace tube for phosphorus diffusion; cleaning the front side of a silicon wafer by using a hydrofluoric acid solution with concentration, cleaning the degree of winding of polysilicon on the front side by using a NaOH solution, and depositing an aluminum oxide film and an antireflection film on the two sides of the silicon wafer; the silicon wafer is screen printed, sintered and electrically implanted for activation. The method has the effects of improving the conversion efficiency of the battery and reducing the time of the process flow.
Description
Technical Field
The application relates to the technical field of photovoltaics, in particular to a preparation method of a high-efficiency TOPCON battery.
Background
Solar cells can be classified into P-type cells and N-type cells according to the substrate silicon wafer. The P-type battery is a battery with an n+/P structure prepared on a P-type silicon wafer (doped with 3-valent elements), and the P-type battery adopts a phosphorus diffusion process, and is mainly represented by an early BSF (aluminum back surface field) battery and a currently mainstream PERC (emitter passivation and back contact) battery, and the ultimate conversion efficiency is 24.5%. Before 2015, BSF batteries occupied 90% of the market, and the PERC batteries began to develop power in 2016, with a PERC battery ratio of over 85% by 2020. The P-type battery has simple process and low cost, but faces the bottleneck of efficiency improvement. The N-type battery has an optimized structure and higher efficiency potential. The N-type cell uses boron diffusion technology to prepare p+/N structure on N-type silicon wafer (doped with 5 valence elements), mainly representing TOPCON (Tunnel Oxide Passivating Contacts, tunneling oxide passivation contact) and HJT (Heterojunction with Intrinsic Thin Layer, crystalline silicon heterojunction solar cell), and has the advantages of high conversion rate, low temperature coefficient, high double-sided rate, long service life of carriers and the like compared with the P-type cell.
In order to improve the proportion of photovoltaic power generation, cost reduction and efficiency improvement are two major lines of photovoltaic manufacturing, the current main stream photovoltaic cell is a crystalline silicon solar cell, and TOPCon technology is one of the most potential novel efficient cell technologies at present due to extremely high compatibility of a process route of the TOPCon technology and a traditional PERC cell production line and obvious efficiency gain of the TOPCon technology, and related researches are increased day by day.
With the development and introduction of TOPCon battery technology, the conversion efficiency of industrialized n-type TOPCon batteries has exceeded 24%. The preparation of the n+POLO structure is the core technology of the battery, and two common preparation schemes in the industry at present are: (1) thermal oxygen + LPCVD in situ doping + high temperature annealing; (2) thermal oxygen + LPCVD intrinsic deposition + diffusion doping. The intrinsic poly Si deposition rate adopted in the scheme (2) is far higher than in-situ deposition, so that the process time of LPCVD can be effectively reduced, and in-situ deposition can provide a more excellent doping curve and a larger tunneling oxygen layer process window. How to continue to improve the conversion efficiency of the photovoltaic cell and reduce the process flow time and thus the manufacturing cost is a common goal and direction of the photovoltaic industry.
Disclosure of Invention
The purpose of the application is to provide a preparation method of a high-efficiency TOPCON battery, which has the effects of improving the battery conversion efficiency and reducing the process flow time.
In order to solve the problems, the invention adopts the technical method that:
the embodiment of the application provides a preparation method of a high-efficiency TOPCON battery, which comprises the following steps:
s1, texturing a silicon wafer, and cleaning and drying the textured silicon wafer;
s2, vacuumizing a furnace tube, then placing the silicon wafer obtained in the step S1 into the furnace tube for baking, detecting leakage of the furnace tube, screen-printing boron diffusion slurry on the front surface of the silicon wafer and sending the boron diffusion slurry into the furnace tube for baking when the furnace tube is free of leakage, and performing thermal diffusion to form a boron diffusion surface;
s3, cleaning the back and four sides of the silicon wafer obtained in the step S2 by using hydrofluoric acid solution;
s4, polishing the silicon wafer obtained in the step S3, and preparing a SiO2 tunneling oxide layer and a polycrystalline silicon layer on the back surface of the silicon wafer;
s5, placing the silicon wafer obtained in the step S4 into a furnace tube for phosphorus diffusion;
s6, cleaning the front side of the silicon wafer obtained in the step S5 by using a hydrofluoric acid solution, cleaning the front side polysilicon degree by using a NaOH solution, and depositing an alumina film and an antireflection film on the two sides of the silicon wafer;
and S7, performing screen printing, sintering and electric injection activation on the silicon wafer obtained in the step S6.
In some embodiments of the application, the cleaning is specifically that the silicon wafer after the texturing is placed in a cleaning solution 1 for nitrogen bubbling treatment for 5-10min, then placed in a hydrofluoric acid solution with the volume concentration of 5-8% for soaking for 5-10min at 70 ℃, cleaned by deionized water, and finally dried; the cleaning solution 1 comprises the following components in percentage by mass: h of (1-2) 2 O 2 And NH 3 ·H 2 O。
In some embodiments of the present application, the step S2 specifically includes vacuumizing a furnace tube, placing the silicon wafer obtained in the step S1 into the furnace tube, baking at 150-200 ℃ for 20min, detecting leakage of the furnace tube, when the furnace tube has no leakage, screen printing boron diffusion slurry on the front surface of the silicon wafer, sending the boron diffusion slurry into the furnace tube, baking at 550-600 ℃ for 3-10S, performing thermal diffusion in nitrogen atmosphere at 780-800 ℃, and preserving heat for 5-10min to form a boron diffusion surface.
In some embodiments of the present application, the boron diffusion slurry includes the following raw materials in parts by weight: 20-30 parts of borosilicate glass powder, 50-80 parts of alcohol ester, 100-3 parts of cellulose ether, 2-4 parts of polyamide wax and 1-3 parts of dibutyl phthalate.
In some embodiments of the present application, the boron diffusion slurry described above is prepared by the following method: mixing alcohol ester twelve, cellulose ether 100, polyamide wax and dibutyl phthalate, standing at 100deg.C for 5-6 hr, adding borosilicate glass powder, stirring at 3500r/min for 4-5 hr to obtain boron diffusion slurry with silicon particle diameter of 10-80nm and boron doping amount of 5×109atom/cm 3 。
In some embodiments of the present application, the hydrofluoric acid solution in the step S3 has a volume concentration of 10-13%.
The method for preparing the efficient TOPCON battery according to claim 1, wherein the tunneling oxide layer is SiO with the thickness of 1-3nm 2 The thickness of the polysilicon layer is 120-150nm.
In some embodiments of the present application, the phosphorus diffusion in the step S5 is specifically performed by POCl3 at 830-850 ℃, and the post diffusion resistance is 85±5 Ω/sqr.
In some embodiments of the present application, the volume concentration of the hydrofluoric acid solution in the step S6 is 5-8%, the thickness of the aluminum oxide film is 5-12nm, the thickness of the front anti-reflective film is 60-80nm, and the thickness of the back anti-reflective film is 70-80nm.
In some embodiments of the present application, the sintering peak temperature of the step S7 is 760-770 ℃.
Compared with the prior art, the invention of the application has at least the following advantages or beneficial effects:
according to the method, boron diffusion is carried out on the surface of the silicon wafer after texturing, the operation can avoid air leakage of the furnace tube and water vapor entering the furnace tube, the boron diffusion effect is good, the silicon wafer can be prevented from whitening, sheet resistance is reduced, and SiO is deposited on the back surface 2 The tunneling oxide layer and the polysilicon layer are sintered finally to finish the battery preparation, the conversion efficiency of the TOPCO battery can be effectively improved, the process flow time is reduced, and the battery prepared by the method has the advantages thatHas the advantages of no boron-rich layer, no winding degree and good uniformity.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present application more clear, the technical solutions in the embodiments of the present application will be clearly and completely described below. The specific conditions are not noted in the examples and are carried out according to conventional conditions or conditions recommended by the manufacturer. The reagents or apparatus used were conventional products commercially available without the manufacturer's attention.
It should be noted that, in the case of no conflict, the embodiments and features in the embodiments may be combined with each other. The present application will be described in detail with reference to specific examples.
The embodiment of the application provides a preparation method of a high-efficiency TOPCON battery, which comprises the following steps:
s1, texturing a silicon wafer, and cleaning and drying the textured silicon wafer;
s2, vacuumizing a furnace tube, then placing the silicon wafer obtained in the step S1 into the furnace tube for baking, detecting leakage of the furnace tube, screen-printing boron diffusion slurry on the front surface of the silicon wafer and sending the boron diffusion slurry into the furnace tube for baking when the furnace tube is free of leakage, and performing thermal diffusion to form a boron diffusion surface;
s3, cleaning the back and four sides of the silicon wafer obtained in the step S2 by using hydrofluoric acid solution;
s4, polishing the silicon wafer obtained in the step S3, and preparing a SiO2 tunneling oxide layer and a polycrystalline silicon layer on the back surface of the silicon wafer;
s5, placing the silicon wafer obtained in the step S4 into a furnace tube for phosphorus diffusion;
s6, cleaning the front side of the silicon wafer obtained in the step S5 by using a hydrofluoric acid solution, cleaning the front side polysilicon degree by using a NaOH solution, and depositing an alumina film and an antireflection film on the two sides of the silicon wafer;
and S7, performing screen printing, sintering and electric injection activation on the silicon wafer obtained in the step S6.
According to the method, boron diffusion is carried out on the surface of the silicon wafer after texturing, the operation can avoid air leakage of the furnace tube and water vapor entering the furnace tube, so that the boron diffusion effect is good, and silicon can be avoidedSheet whitening and sheet resistance reduction, deposition of SiO on the back side 2 The tunneling oxide layer and the polysilicon layer are sintered to finish battery preparation, so that the conversion efficiency of the TOPCO battery can be effectively improved, the time of a process flow is reduced, and the battery prepared by the method has the advantages of no boron-rich layer, no winding degree and good uniformity.
In some embodiments of the application, the cleaning is specifically that the silicon wafer after the texturing is placed in a cleaning solution 1 for nitrogen bubbling treatment for 5-10min, then placed in a hydrofluoric acid solution with the volume concentration of 5-8% for soaking for 5-10min at 70 ℃, cleaned by deionized water, and finally dried; the cleaning solution 1 comprises the following components in percentage by mass: h of (1-2) 2 O 2 And NH 3 ·H 2 O。
The silicon is corroded by ammonia water, the complexing effect is achieved, metal and heavy metal impurity particles are removed, hydrofluoric acid is used for removing an oxide layer on the surface of the silicon wafer, and clear water is used for flushing the residual solution on the surface of the silicon wafer.
In some embodiments of the present application, the step S2 specifically includes vacuumizing a furnace tube, placing the silicon wafer obtained in the step S1 into the furnace tube, baking at 150-200 ℃ for 20min, detecting leakage of the furnace tube, when the furnace tube has no leakage, screen printing boron diffusion slurry on the front surface of the silicon wafer, sending the boron diffusion slurry into the furnace tube, baking at 550-600 ℃ for 3-10S, performing thermal diffusion in nitrogen atmosphere at 780-800 ℃, and preserving heat for 5-10min to form a boron diffusion surface.
After baking, the silicon wafer is put into the furnace tube, so that no water vapor can be prevented from interfering with subsequent operation, the slurry can be prevented from absorbing water, the water vapor can be prevented from entering the furnace tube after leakage detection, and therefore the appearance of the silicon wafer is prevented from whitening, and the sheet resistance is low.
In some embodiments of the present application, the boron diffusion slurry includes the following raw materials in parts by weight: 20-30 parts of borosilicate glass powder, 50-80 parts of alcohol ester, 1001-3 parts of cellulose ether, 2-4 parts of polyamide wax and 1-3 parts of dibutyl phthalate. Through the raw material proportion, the obtained slurry has good diffusion efficiency.
The viscosity of the cellulose ether 100 used in the application is 80-95Pas, so that the obtained slurry has good printing performance and a thin silicon film; the polyamide wax can form a strong network structure, has excellent thixotropic property, has excellent sagging resistance and sedimentation resistance, is beneficial to the slurry flow to facilitate the printing of high-precision patterns due to lower viscosity during screen printing, and has lower shearing force after printing, higher viscosity, can prevent the slurry from sedimentation and increase the storage time of the slurry; dibutyl phthalate has good stability, flex resistance, cohesiveness and water resistance.
In some embodiments of the present application, the boron diffusion slurry described above is prepared by the following method: mixing alcohol ester twelve, cellulose ether 100, polyamide wax and dibutyl phthalate, standing at 100deg.C for 5-6 hr, adding borosilicate glass powder, stirring at 3500r/min for 4-5 hr to obtain boron diffusion slurry with silicon particle diameter of 10-80nm and boron doping amount of 5×109atom/cm 3 。
In some embodiments of the present application, the borosilicate glass frit includes a boron source, a silicon source, and a group III metal source.
In some embodiments of the present application, the hydrofluoric acid solution in the step S3 has a volume concentration of 10-13%.
The preparation method of the high-efficiency TOPCON battery according to claim 1, wherein the tunneling oxide layer is SiO with the thickness of 1-3nm 2 The thickness of the polysilicon layer is 120-150nm.
In some embodiments of the present application, the phosphorus diffusion in the step S5 is specifically performed by POCl3 at 830-850 ℃, and the post diffusion resistance is 85±5 Ω/sqr.
In some embodiments of the present application, the hydrofluoric acid solution in the step S6 has a volume concentration of 5-8%, the aluminum oxide film has a thickness of 5-12nm, the front anti-reflective film has a thickness of 60-80nm, and the back anti-reflective film has a thickness of 70-80nm.
In some embodiments of the present application, the sintering peak temperature of the step S7 is 760-770 ℃.
The features and capabilities of the present application are described in further detail below in connection with the examples.
Example 1
A preparation method of a high-efficiency TOPCON battery comprises the following steps:
s1, texturing the silicon wafer, and placing the textured silicon wafer in a cleaning solution 1 (H with the mass ratio of 10:1) 2 O 2 And NH 3 ·H 2 The nitrogen bubbling treatment is carried out for 5min in O), then the mixture is placed in hydrofluoric acid solution with the volume concentration of 5 percent for soaking for 5min at the temperature of 70 ℃, and the mixture is washed by deionized water and finally dried;
s2, vacuumizing a furnace tube, putting the silicon wafer obtained in the step S1 into the furnace tube, baking for 20min at 150 ℃, detecting leakage of the furnace tube, when the furnace tube is free from leakage, screen printing boron diffusion slurry on the front surface of the silicon wafer, sending the boron diffusion slurry into the furnace tube, baking for 3S at 550 ℃, performing thermal diffusion in a nitrogen atmosphere at 780 ℃, and preserving heat for 5min to form a boron diffusion surface;
s3, cleaning the back and four sides of the silicon wafer obtained in the step S2 by using a hydrofluoric acid solution with volume concentration of 10%;
s4, polishing the silicon wafer obtained in the step S3, and preparing SiO with the thickness of 1-3nm on the back surface of the silicon wafer 2 A tunneling oxide layer and a polysilicon layer with the thickness of 120-150 nm;
s5, placing the silicon wafer obtained in the step S4 into a furnace tube, and passing POCl at 830 DEG C 3 Phosphorus diffusion is carried out, and the diffusion rear resistance is 83 omega/sqr;
s6, cleaning the front side of the silicon wafer obtained in the step S5 by using a hydrofluoric acid solution with the concentration of 7% by volume, cleaning the front side polysilicon winding degree by using a NaOH solution, and depositing an aluminum oxide film and an antireflection film on the two sides of the silicon wafer, wherein the thickness of the aluminum oxide film is 5-12nm, the thickness of the antireflection film on the front side is 60-80nm, and the thickness of the antireflection film on the back side is 70-80nm;
and S7, performing screen printing, sintering and electric injection activation on the silicon wafer obtained in the step S6, wherein the sintering peak temperature is 760 ℃.
The boron diffusion slurry comprises the following raw materials by weight: 20g of borosilicate glass powder, twelve 50g of alcohol ester, 100 g of cellulose ether, 2g of polyamide wax and 1g of dibutyl phthalate.
The boron diffusion slurry is prepared by the following method: mixing alcohol ester twelve, cellulose ether 100, polyamide wax and dibutyl phthalate, and keeping the temperature at 100 DEG C5h, adding borosilicate glass powder, stirring for 4h at 3500r/min to obtain boron diffusion slurry, wherein the particle size range of silicon particles in the boron diffusion slurry is 10nm, and the boron doping amount is 5×10 9 atom/cm 3 。
Example 2
A preparation method of a high-efficiency TOPCON battery comprises the following steps:
s1, texturing the silicon wafer, and placing the textured silicon wafer in a cleaning solution 1 (H with the mass ratio of 10:1.5) 2 O 2 And NH 3 ·H 2 Performing nitrogen bubbling treatment in O) for 8min, soaking in 7% hydrofluoric acid solution at 70 ℃ for 8min, cleaning with deionized water, and finally drying;
s2, vacuumizing a furnace tube, putting the silicon wafer obtained in the step S1 into the furnace tube, baking for 20min at 180 ℃, detecting leakage of the furnace tube, when the furnace tube is free from leakage, screen printing boron diffusion slurry on the front surface of the silicon wafer, sending the boron diffusion slurry into the furnace tube, baking for 7S at 580 ℃, performing thermal diffusion in a nitrogen atmosphere at 790 ℃, and preserving heat for 8min to form a boron diffusion surface;
s3, cleaning the back and four sides of the silicon wafer obtained in the step S2 by using a hydrofluoric acid solution with volume concentration of 10-13%;
s4, polishing the silicon wafer obtained in the step S3, and preparing SiO with the thickness of 2nm on the back surface of the silicon wafer 2 A tunneling oxide layer and a polysilicon layer with the thickness of 120-150 nm;
s5, placing the silicon wafer obtained in the step S4 into a furnace tube, and passing POCl at 840 DEG C 3 Phosphorus diffusion is carried out, and the diffusion rear resistance is 85+/-5 omega/sqr;
s6, cleaning the front side of the silicon wafer obtained in the step S5 by using a hydrofluoric acid solution with the concentration of 7% by volume, cleaning the front side polysilicon winding degree by using a NaOH solution, and depositing an aluminum oxide film and an antireflection film on the two sides of the silicon wafer, wherein the thickness of the aluminum oxide film is 5-12nm, the thickness of the antireflection film on the front side is 60-80nm, and the thickness of the antireflection film on the back side is 70-80nm;
and S7, screen printing, sintering and electric injection activation are carried out on the silicon wafer obtained in the step S6, wherein the sintering peak temperature is 760-770 ℃.
The boron diffusion slurry comprises the following raw materials by weight: borosilicate glass powder 25g, alcohol ester twelve 70g, cellulose ether 100 g, polyamide wax 3g and dibutyl phthalate 2g.
The boron diffusion slurry is prepared by the following method: mixing alcohol ester twelve, cellulose ether 100, polyamide wax and dibutyl phthalate, standing at 100deg.C for 6 hr, adding borosilicate glass powder, stirring at 3500r/min for 5 hr to obtain boron diffusion slurry with silicon particle diameter of 10-80nm and boron doping amount of 5×10 9 atom/cm 3 。
Example 3
A preparation method of a high-efficiency TOPCON battery comprises the following steps:
s1, texturing the silicon wafer, and placing the textured silicon wafer in a cleaning solution 1 (the mass ratio of H is 10:2) 2 O 2 And NH 3 ·H 2 The nitrogen bubbling treatment is carried out for 10min in O), then the mixture is placed in hydrofluoric acid solution with the volume concentration of 8 percent, soaked for 10min at the temperature of 70 ℃, washed by deionized water and finally dried;
s2, vacuumizing a furnace tube, putting the silicon wafer obtained in the step S1 into the furnace tube, baking for 20min at 200 ℃, detecting leakage of the furnace tube, when the furnace tube is free from leakage, screen printing boron diffusion slurry on the front surface of the silicon wafer, sending the boron diffusion slurry into the furnace tube, baking for 10S at 600 ℃, performing thermal diffusion in a nitrogen atmosphere at 800 ℃, and preserving heat for 10min to form a boron diffusion surface;
s3, cleaning the back and four sides of the silicon wafer obtained in the step S2 by using a hydrofluoric acid solution with volume concentration of 13%;
s4, polishing the silicon wafer obtained in the step S3, and preparing SiO with the thickness of 3nm on the back surface of the silicon wafer 2 A tunneling oxide layer and a polysilicon layer with the thickness of 120-150 nm;
s5, placing the silicon wafer obtained in the step S4 into a furnace tube, and passing POCl at 850 DEG C 3 Phosphorus diffusion is carried out, and the diffusion rear resistance is 85+/-5 omega/sqr;
s6, cleaning the front side of the silicon wafer obtained in the step S5 by using a hydrofluoric acid solution with the concentration of 8% by volume, cleaning the front side polysilicon winding degree by using a NaOH solution, and depositing an aluminum oxide film and an antireflection film on the two sides of the silicon wafer, wherein the thickness of the aluminum oxide film is 12nm, the thickness of the antireflection film on the front side is 60-80nm, and the thickness of the antireflection film on the back side is 70-80nm;
and S7, screen printing, sintering and electric injection activation are carried out on the silicon wafer obtained in the step S6, wherein the sintering peak temperature is 760-770 ℃.
The boron diffusion slurry comprises the following raw materials by weight: 30g of borosilicate glass powder, twelve 80g of alcohol ester, 100 g of cellulose ether, 4g of polyamide wax and 3g of dibutyl phthalate.
The boron diffusion slurry is prepared by the following method: mixing alcohol ester twelve, cellulose ether 100, polyamide wax and dibutyl phthalate, standing at 100deg.C for 6 hr, adding borosilicate glass powder, stirring at 3500r/min for 5 hr to obtain boron diffusion slurry with silicon particle diameter of 10-80nm and boron doping amount of 5×10 9 atom/cm 3 。
Comparative example 1
This comparative example is substantially identical to example 2, except that: by BBr 3 Boron diffusion is performed as a boron source.
Comparative example 2
This comparative example is substantially identical to example 2, except that: no anti-reflection film is deposited on the two sides of the silicon wafer.
Experimental example
The batteries of example 2 and comparative examples 1 to 2 were subjected to test passivation effect and electrical properties, and the results are shown in table 1.
TABLE 1
| Sample of | iVoc(mV) | J0(fA/cm 2 ) | Uoc(V) | Isc(A) | FF(％) | Efficiency(％) |
| Example 2 | 748 | 3.0 | 0.7148 | 13.347 | 83.57 | 24.15 |
| Comparative example 1 | 741 | 3.2 | 0.7124 | 13.343 | 83.71 | 24.12 |
| Comparative example 2 | 744 | 3.1 | 0.7139 | 13.346 | 83.69 | 24.14 |
From a review of the data in Table 1, it can be seen that the passivation characterization results of example 2 are better and the electrical properties are better.
In summary, according to the method, the boron diffusion is performed on the surface of the silicon wafer after the texturing, so that the air leakage of the furnace tube and the water vapor entering the furnace tube can be avoided, and the boron diffusion effect can be achievedGood effect, can avoid the whitening of the silicon chip and reduce the sheet resistance, deposit SiO on the back surface 2 The tunneling oxide layer and the polysilicon layer are sintered to finish battery preparation, so that the conversion efficiency of the TOPCO battery can be effectively improved, the time of a process flow is reduced, and the battery prepared by the method has the advantages of no boron-rich layer, no winding degree and good uniformity.
The embodiments described above are some, but not all, of the embodiments of the present application. The detailed description of the embodiments of the present application is not intended to limit the scope of the application, as claimed, but is merely representative of selected embodiments of the application. All other embodiments, which can be made by one of ordinary skill in the art based on the embodiments herein without making any inventive effort, are intended to be within the scope of the present application.
Claims (10)
1. The preparation method of the high-efficiency TOPCON battery is characterized by comprising the following steps of:
s1, texturing a silicon wafer, and cleaning and drying the textured silicon wafer;
s2, vacuumizing a furnace tube, then placing the silicon wafer obtained in the step S1 into the furnace tube for baking, detecting leakage of the furnace tube, screen-printing boron diffusion slurry on the front surface of the silicon wafer and sending the boron diffusion slurry into the furnace tube for baking when the furnace tube is free of leakage, and performing thermal diffusion to form a boron diffusion surface;
s3, cleaning the back and four sides of the silicon wafer obtained in the step S2 by using hydrofluoric acid solution;
s4, polishing the silicon wafer obtained in the step S3, and preparing SiO (silicon oxide) on the back surface of the silicon wafer 2 A tunneling oxide layer and a polysilicon layer;
s5, placing the silicon wafer obtained in the step S4 into a furnace tube for phosphorus diffusion;
s6, cleaning the front side of the silicon wafer obtained in the step S5 by using a hydrofluoric acid solution, cleaning the front side polysilicon degree by using a NaOH solution, and depositing an alumina film and an antireflection film on the two sides of the silicon wafer;
and S7, performing screen printing, sintering and electric injection activation on the silicon wafer obtained in the step S6.
2. According to claimThe preparation method of the high-efficiency TOPCON battery is characterized in that the cleaning is specifically that a silicon wafer subjected to texturing is placed in a cleaning solution 1 for nitrogen bubbling treatment for 5-10min, then is placed in a hydrofluoric acid solution with the volume concentration of 5-8% for soaking for 5-10min at the temperature of 70 ℃, and is cleaned by deionized water and finally is dried; the cleaning solution 1 comprises the following components in percentage by mass: h of (1-2) 2 O 2 And NH 3 ·H 2 O。
3. The preparation method of the high-efficiency TOPCon battery according to claim 1 is characterized in that the step S2 is specifically that a furnace tube is vacuumized, the silicon wafer obtained in the step S1 is placed into the furnace tube and baked for 20min at 150-200 ℃, the furnace tube is subjected to leak detection, when the furnace tube is free of leakage, boron diffusion slurry is screen-printed on the front surface of the silicon wafer, the silicon wafer is sent into the furnace tube and baked for 3-10S at 550-600 ℃, and then the silicon wafer is subjected to thermal diffusion at 780-800 ℃ in a nitrogen atmosphere, and the temperature is kept for 5-10min to form a boron diffusion surface.
4. The preparation method of the efficient TOPCON battery according to claim 1, wherein the boron diffusion slurry comprises the following raw materials in parts by weight: 20-30 parts of borosilicate glass powder, 50-80 parts of alcohol ester, 1001-3 parts of cellulose ether, 2-4 parts of polyamide wax and 1-3 parts of dibutyl phthalate.
5. The preparation method of the efficient TOPCON battery according to claim 4, wherein the boron diffusion slurry is prepared by the following method: mixing alcohol ester twelve, cellulose ether 100, polyamide wax and dibutyl phthalate, standing at 100deg.C for 5-6 hr, adding borosilicate glass powder, stirring at 3500r/min for 4-5 hr to obtain boron diffusion slurry with silicon particle diameter of 10-80nm and boron doping amount of 5×10 9 atom/cm 3 。
6. The method for preparing the efficient TOPCon battery according to claim 1, wherein the volume concentration of the hydrofluoric acid solution in the step S3 is 10-13%.
7. The method for preparing the efficient TOPCON battery according to claim 1, wherein the tunneling oxide layer is SiO with the thickness of 1-3nm 2 The thickness of the polysilicon layer is 120-150nm.
8. The method of claim 1, wherein the phosphorus diffusion of step S5 is performed by POCl at 830-850 °c 3 Phosphorus diffusion is carried out, and the diffusion rear resistance is 85+/-5 omega/sqr.
9. The method for preparing the efficient TOPCon battery according to claim 1, wherein the volume concentration of the hydrofluoric acid solution in the step S6 is 5-8%, the thickness of the aluminum oxide film is 5-12nm, the thickness of the front anti-reflection film is 60-80nm, and the thickness of the back anti-reflection film is 70-80nm.
10. The method for preparing a highly efficient TOPCon battery according to claim 1, wherein the sintering peak temperature of step S7 is 760-770 ℃.
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