CN110644057A - Monocrystalline silicon texturing additive formula containing alkyl glycoside and use method - Google Patents
Monocrystalline silicon texturing additive formula containing alkyl glycoside and use method Download PDFInfo
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- CN110644057A CN110644057A CN201910966020.7A CN201910966020A CN110644057A CN 110644057 A CN110644057 A CN 110644057A CN 201910966020 A CN201910966020 A CN 201910966020A CN 110644057 A CN110644057 A CN 110644057A
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- monocrystalline silicon
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- 229910021421 monocrystalline silicon Inorganic materials 0.000 title claims abstract description 57
- 239000000654 additive Substances 0.000 title claims abstract description 33
- 230000000996 additive effect Effects 0.000 title claims abstract description 32
- 238000000034 method Methods 0.000 title claims abstract description 19
- -1 alkyl glycoside Chemical class 0.000 title claims abstract description 17
- 229930182470 glycoside Natural products 0.000 title claims abstract description 16
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 48
- 239000008367 deionised water Substances 0.000 claims abstract description 35
- 229910021641 deionized water Inorganic materials 0.000 claims abstract description 34
- 238000004140 cleaning Methods 0.000 claims abstract description 25
- 239000002253 acid Substances 0.000 claims abstract description 18
- 238000001035 drying Methods 0.000 claims abstract description 11
- 239000004115 Sodium Silicate Substances 0.000 claims abstract description 8
- NTHWMYGWWRZVTN-UHFFFAOYSA-N sodium silicate Chemical compound [Na+].[Na+].[O-][Si]([O-])=O NTHWMYGWWRZVTN-UHFFFAOYSA-N 0.000 claims abstract description 8
- 229910052911 sodium silicate Inorganic materials 0.000 claims abstract description 8
- 229910017053 inorganic salt Inorganic materials 0.000 claims abstract description 6
- 159000000000 sodium salts Chemical class 0.000 claims abstract description 6
- 150000002016 disaccharides Chemical class 0.000 claims abstract description 5
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 30
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 15
- 229910052710 silicon Inorganic materials 0.000 claims description 15
- 239000010703 silicon Substances 0.000 claims description 15
- 238000002791 soaking Methods 0.000 claims description 14
- 210000002268 wool Anatomy 0.000 claims description 14
- 239000007788 liquid Substances 0.000 claims description 10
- 239000000203 mixture Substances 0.000 claims description 8
- WCUXLLCKKVVCTQ-UHFFFAOYSA-M Potassium chloride Chemical compound [Cl-].[K+] WCUXLLCKKVVCTQ-UHFFFAOYSA-M 0.000 claims description 6
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical group [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 claims description 6
- 238000005406 washing Methods 0.000 claims description 6
- 238000002310 reflectometry Methods 0.000 claims description 5
- 239000007800 oxidant agent Substances 0.000 claims description 4
- 230000001590 oxidative effect Effects 0.000 claims description 4
- 238000002360 preparation method Methods 0.000 claims description 4
- OWEGMIWEEQEYGQ-UHFFFAOYSA-N 100676-05-9 Natural products OC1C(O)C(O)C(CO)OC1OCC1C(O)C(O)C(O)C(OC2C(OC(O)C(O)C2O)CO)O1 OWEGMIWEEQEYGQ-UHFFFAOYSA-N 0.000 claims description 3
- ITIONVBQFUNVJV-UHFFFAOYSA-N Etomidoline Chemical compound C12=CC=CC=C2C(=O)N(CC)C1NC(C=C1)=CC=C1OCCN1CCCCC1 ITIONVBQFUNVJV-UHFFFAOYSA-N 0.000 claims description 3
- GUBGYTABKSRVRQ-QKKXKWKRSA-N Lactose Natural products OC[C@H]1O[C@@H](O[C@H]2[C@H](O)[C@@H](O)C(O)O[C@@H]2CO)[C@H](O)[C@@H](O)[C@H]1O GUBGYTABKSRVRQ-QKKXKWKRSA-N 0.000 claims description 3
- GUBGYTABKSRVRQ-PICCSMPSSA-N Maltose Natural products O[C@@H]1[C@@H](O)[C@H](O)[C@@H](CO)O[C@@H]1O[C@@H]1[C@@H](CO)OC(O)[C@H](O)[C@H]1O GUBGYTABKSRVRQ-PICCSMPSSA-N 0.000 claims description 3
- CZMRCDWAGMRECN-UGDNZRGBSA-N Sucrose Chemical compound O[C@H]1[C@H](O)[C@@H](CO)O[C@@]1(CO)O[C@@H]1[C@H](O)[C@@H](O)[C@H](O)[C@@H](CO)O1 CZMRCDWAGMRECN-UGDNZRGBSA-N 0.000 claims description 3
- 229930006000 Sucrose Natural products 0.000 claims description 3
- GZCKIUIIYCBICZ-UHFFFAOYSA-L disodium;benzene-1,3-dicarboxylate Chemical compound [Na+].[Na+].[O-]C(=O)C1=CC=CC(C([O-])=O)=C1 GZCKIUIIYCBICZ-UHFFFAOYSA-L 0.000 claims description 3
- 239000008101 lactose Substances 0.000 claims description 3
- 229910017604 nitric acid Inorganic materials 0.000 claims description 3
- 239000001103 potassium chloride Substances 0.000 claims description 3
- WXMKPNITSTVMEF-UHFFFAOYSA-M sodium benzoate Chemical compound [Na+].[O-]C(=O)C1=CC=CC=C1 WXMKPNITSTVMEF-UHFFFAOYSA-M 0.000 claims description 3
- 239000004299 sodium benzoate Substances 0.000 claims description 3
- 235000010234 sodium benzoate Nutrition 0.000 claims description 3
- 239000011780 sodium chloride Substances 0.000 claims description 3
- 229940006198 sodium phenylacetate Drugs 0.000 claims description 3
- GUBGYTABKSRVRQ-XLOQQCSPSA-N Alpha-Lactose Chemical compound O[C@@H]1[C@@H](O)[C@@H](O)[C@@H](CO)O[C@H]1O[C@@H]1[C@@H](CO)O[C@H](O)[C@H](O)[C@H]1O GUBGYTABKSRVRQ-XLOQQCSPSA-N 0.000 claims description 2
- GUBGYTABKSRVRQ-CUHNMECISA-N D-Cellobiose Chemical compound O[C@@H]1[C@@H](O)[C@H](O)[C@@H](CO)O[C@H]1O[C@@H]1[C@@H](CO)OC(O)[C@H](O)[C@H]1O GUBGYTABKSRVRQ-CUHNMECISA-N 0.000 claims description 2
- 229910003641 H2SiO3 Inorganic materials 0.000 claims description 2
- 239000007832 Na2SO4 Substances 0.000 claims description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims description 2
- PMZURENOXWZQFD-UHFFFAOYSA-L Sodium Sulfate Chemical compound [Na+].[Na+].[O-]S([O-])(=O)=O PMZURENOXWZQFD-UHFFFAOYSA-L 0.000 claims description 2
- VMHLLURERBWHNL-UHFFFAOYSA-M Sodium acetate Chemical compound [Na+].CC([O-])=O VMHLLURERBWHNL-UHFFFAOYSA-M 0.000 claims description 2
- GUBGYTABKSRVRQ-QUYVBRFLSA-N beta-maltose Chemical compound OC[C@H]1O[C@H](O[C@H]2[C@H](O)[C@@H](O)[C@H](O)O[C@@H]2CO)[C@H](O)[C@@H](O)[C@@H]1O GUBGYTABKSRVRQ-QUYVBRFLSA-N 0.000 claims description 2
- 239000001110 calcium chloride Substances 0.000 claims description 2
- 229910001628 calcium chloride Inorganic materials 0.000 claims description 2
- OTYBMLCTZGSZBG-UHFFFAOYSA-L potassium sulfate Chemical compound [K+].[K+].[O-]S([O-])(=O)=O OTYBMLCTZGSZBG-UHFFFAOYSA-L 0.000 claims description 2
- 229910052939 potassium sulfate Inorganic materials 0.000 claims description 2
- 239000001632 sodium acetate Substances 0.000 claims description 2
- 235000017281 sodium acetate Nutrition 0.000 claims description 2
- 229960004249 sodium acetate Drugs 0.000 claims description 2
- 229960003885 sodium benzoate Drugs 0.000 claims description 2
- VWDWKYIASSYTQR-UHFFFAOYSA-N sodium nitrate Inorganic materials [Na+].[O-][N+]([O-])=O VWDWKYIASSYTQR-UHFFFAOYSA-N 0.000 claims description 2
- ZNCPFRVNHGOPAG-UHFFFAOYSA-L sodium oxalate Chemical compound [Na+].[Na+].[O-]C(=O)C([O-])=O ZNCPFRVNHGOPAG-UHFFFAOYSA-L 0.000 claims description 2
- 229940039790 sodium oxalate Drugs 0.000 claims description 2
- 229910052938 sodium sulfate Inorganic materials 0.000 claims description 2
- 239000005720 sucrose Substances 0.000 claims description 2
- 230000000694 effects Effects 0.000 abstract description 7
- 238000006243 chemical reaction Methods 0.000 abstract description 6
- 238000009826 distribution Methods 0.000 abstract description 4
- 239000000243 solution Substances 0.000 description 30
- 235000012431 wafers Nutrition 0.000 description 28
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 12
- 230000008901 benefit Effects 0.000 description 4
- 238000004381 surface treatment Methods 0.000 description 4
- 239000004094 surface-active agent Substances 0.000 description 4
- 241000282414 Homo sapiens Species 0.000 description 3
- 239000003795 chemical substances by application Substances 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 239000002904 solvent Substances 0.000 description 3
- 239000003513 alkali Substances 0.000 description 2
- 230000000844 anti-bacterial effect Effects 0.000 description 2
- 238000003486 chemical etching Methods 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000001000 micrograph Methods 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 231100000956 nontoxicity Toxicity 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 239000000575 pesticide Substances 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 229960004793 sucrose Drugs 0.000 description 2
- WQZGKKKJIJFFOK-GASJEMHNSA-N Glucose Natural products OC[C@H]1OC(O)[C@H](O)[C@@H](O)[C@@H]1O WQZGKKKJIJFFOK-GASJEMHNSA-N 0.000 description 1
- 241000282412 Homo Species 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 239000012670 alkaline solution Substances 0.000 description 1
- 125000000217 alkyl group Chemical group 0.000 description 1
- 239000012752 auxiliary agent Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- WQZGKKKJIJFFOK-VFUOTHLCSA-N beta-D-glucose Chemical compound OC[C@H]1O[C@@H](O)[C@H](O)[C@@H](O)[C@@H]1O WQZGKKKJIJFFOK-VFUOTHLCSA-N 0.000 description 1
- 238000006065 biodegradation reaction Methods 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
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- 238000002485 combustion reaction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010790 dilution Methods 0.000 description 1
- 239000012895 dilution Substances 0.000 description 1
- 239000002270 dispersing agent Substances 0.000 description 1
- 239000003814 drug Substances 0.000 description 1
- 230000001804 emulsifying effect Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000004880 explosion Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 150000002191 fatty alcohols Chemical class 0.000 description 1
- 239000006260 foam Substances 0.000 description 1
- 235000013305 food Nutrition 0.000 description 1
- 238000009472 formulation Methods 0.000 description 1
- 239000008103 glucose Substances 0.000 description 1
- 239000008233 hard water Substances 0.000 description 1
- 239000004009 herbicide Substances 0.000 description 1
- 231100000086 high toxicity Toxicity 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000009776 industrial production Methods 0.000 description 1
- 229910052500 inorganic mineral Inorganic materials 0.000 description 1
- 230000007794 irritation Effects 0.000 description 1
- 239000010985 leather Substances 0.000 description 1
- 238000005461 lubrication Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000011707 mineral Substances 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 239000003208 petroleum Substances 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 239000004597 plastic additive Substances 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 238000001878 scanning electron micrograph Methods 0.000 description 1
- 229920002545 silicone oil Polymers 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 230000000638 stimulation Effects 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 230000004083 survival effect Effects 0.000 description 1
- 230000002195 synergetic effect Effects 0.000 description 1
- 239000004753 textile Substances 0.000 description 1
- 230000008719 thickening Effects 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 238000009736 wetting Methods 0.000 description 1
Images
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
- C30B33/08—Etching
- C30B33/10—Etching in solutions or melts
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
- H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
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- Crystallography & Structural Chemistry (AREA)
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- Condensed Matter Physics & Semiconductors (AREA)
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Abstract
The invention relates to an additive of monocrystalline silicon piece texturing solution containing alkyl glycoside, which comprises the following components: alkyl glycoside, disaccharide, organic sodium salt, inorganic salt, sodium silicate and the balance of water. The invention also discloses a texturing method of the monocrystalline silicon wafer, which comprises the following steps: 1) preparing a texturing additive; 2) preparing a texturing solution; 3) putting the monocrystalline silicon wafer into the texturing solution prepared in the step 2) for texturing, wherein the temperature of the texturing solution is 75-90 ℃, and the texturing time is 7-15 min; 4) and cleaning the monocrystalline silicon wafer subjected to the texturing solution by using mixed acid, cleaning the monocrystalline silicon wafer by using deionized water, and drying the monocrystalline silicon wafer to obtain the product. The texture surface pyramid has excellent texture effect, the size of the texture surface pyramid after texture surface is small, the distribution is narrow, and the reflection of light can be effectively reduced, so that the photoelectric conversion efficiency of the solar cell can be improved.
Description
Technical Field
The invention belongs to the technical field of solar cell monocrystalline silicon wafers, and particularly relates to an influence of alkyl glycoside type and content on texturing of a monocrystalline silicon wafer.
Background
One of two important problems faced by the sustainable development of modern society is the energy problem, and the rapid development of the world economy brings benefits to human beings and is accompanied with a plurality of disadvantages, namely the excessive consumption of energy, which undoubtedly leads the human society to be in the situation of resource shortage, and then leads to the ecological environment problem. In order to protect the earth's home upon which humans rely for survival, the development of clean energy is at hand. The solar energy is the most important renewable energy source due to the huge storage amount, high feasibility of utilization, environmental protection and no pollution. People are continuously exploring the manufacturing process of the solar cell, the improvement of the photoelectric conversion efficiency of the solar cell is a target which is always pursued by people, the reduction of the loss of sunlight on the surface of monocrystalline silicon as far as possible is a main purpose of texturing of the monocrystalline silicon, and is also a main method for improving the photoelectric conversion efficiency. In the solar cell production process, the surface treatment plays a crucial role, and monocrystalline silicon without surface treatment only can utilize a part of light when sunlight irradiates the surface of a silicon wafer, and the other part of the light is directly reflected out and lost, and the loss amount is directly related to the surface texturing effect. Various methods for surface treatment of single crystal silicon have been explored, and among them, the chemical etching method is relatively inexpensive, cost-effective, simple in process, and has been widely used.
After the surface of the single crystal silicon is corroded (textured), an uneven textured surface which is similar to a pyramid with a certain size is formed on the surface, and the textured surface plays a great role because the textured surface can reflect light irradiated to the surface of the silicon wafer for many times, can greatly increase the transmittance of the light, and has the effect called as flame light efficiency. The optical efficiency of the flame enables the optical path of incident light on the silicon surface to be extended, the reflection loss of light is reduced, more photon-generated carriers are generated, the photoelectric conversion efficiency is further improved, and the cost performance of the cell is improved. The research of related documents finds that people develop various novel texturing processes and formulas, and the methods have various defects while obtaining better texturing effect.
The forming of the monocrystalline silicon suede is influenced by various factors, the type and concentration of the alkali solution, the original state of the silicon wafer, the texturing time and temperature, the components of the texturing formula and the like. The alkaline solution in the reagent required by the texture making is a main component, Isopropanol (IPA) is commonly used as an additive in the industry at present and is also a surfactant, and the addition of the IPA can increase the lubrication degree of the surface of the silicon wafer, reduce the surface tension of liquid and enable the generated hydrogen to be quickly separated from the surface of the silicon wafer without hindering the reaction process. However, IPA has a high toxicity and a high cost, and it is not preferable to use IPA in a large amount for industrial production. Therefore, a low-cost, high-efficiency and environmentally friendly chemical etching texturing method is always the best choice for the photovoltaic world.
The invention mainly researches the influence of the type and content of alkyl glycoside and other auxiliary additives on texturing of the surface of the monocrystalline silicon. Alkyl glycoside (APG) can be synthesized from glucose and fatty alcohol, and complex glycoside compound has sugar unit of 2 or more, and is also called Alkyl Polyglycoside. APG is white solid powder or light yellow oily liquid at normal temperature, has high solubility in water and is difficult to dissolve in common organic solvents. The alkyl glycoside has the advantages of low surface tension, no cloud point, adjustable HLB value, strong wetting power, strong detergency, rich and fine foam, strong compatibility, no toxicity, no harm, no stimulation to skin, rapid and thorough biodegradation, capability of being compounded with any type of surfactant and obvious synergistic effect. The alkyl glycoside has strong broad-spectrum antibacterial activity, obvious thickening effect, easy dilution, no gel phenomenon, convenient use, strong alkali resistance, strong acid resistance, hard water resistance and strong salt resistance. It can be used as emulsifying dispersant for food, pesticide and silicone oil; synergists for pesticides, herbicides; agricultural film antifogging agents, plastic additives; and can also be used in various fields such as medicine, biological engineering, industrial cleaning, fire-fighting agents, textile auxiliary agents, coating, photosensitive materials, leather making, oil extraction, mineral processing, rubber and plastic, energy sources and the like. APG has advantages in product safety, mildness and antibacterial property, and is the mainstream surfactant for replacing the existing petroleum-based surfactant.
Disclosure of Invention
The invention provides an additive of monocrystalline silicon piece texturing solution and a using method thereof, which are characterized in that when the monocrystalline silicon piece for a solar cell is subjected to surface texturing, the additive is added into alkaline texturing solution to achieve an excellent texturing effect. The size of the suede pyramid is small after the texturing, the distribution is narrow, the reflection of light can be obviously reduced, and therefore the photoelectric conversion efficiency of the assembled solar cell can be improved.
The invention provides an additive for a monocrystalline silicon piece texturing solution, which comprises the following components: alkyl glycoside, disaccharide, organic sodium salt, inorganic salt, sodium silicate and the balance of water, wherein the water is deionized water.
Based on the scheme, the alkyl glycoside in the additive is one or a mixture of more of APG0810, APG1214, APG0814, APG0816 and APG1216, and the weight ratio of the alkyl glycoside to water is 0.5-1.5: 100.
On the basis of the scheme, the disaccharide in the additive is one or a mixture of more of maltose, cellobiose, sucrose and lactose, and the weight ratio of sugar to water is 1.0-2.0: 100.
On the basis of the scheme, the organic sodium salt in the additive is one or a mixture of more of sodium acetate, sodium oxalate, sodium benzoate, sodium phenylacetate and sodium isophthalate, and the weight ratio of the organic sodium salt to water is 0.1-1.0: 100.
On the basis of the scheme, the inorganic salt in the additive is NaCl, KCl and Na2SO4、K2SO4、CaCl2One or more of the above components, and the weight ratio of inorganic salt to water is 0.1-1.0: 100.
On the basis of the scheme, the weight ratio of the sodium silicate to the water in the additive is 0.2-1.2: 100.
The invention also provides a preparation method of the texture surface preparation agent for the surface treatment of the monocrystalline silicon piece, which comprises a texture surface preparation method of the monocrystalline silicon piece.
(1) Adding 20.0-40.0mL of NaOH solution with the weight percentage concentration of 30% into 1L of deionized water, and adding 10.0-20.0mL of the additive to obtain the alkaline wool making solution.
(2) And (2) placing the cut monocrystalline silicon wafer into a precleaning liquid at 65 ℃ for cleaning for 2-8min, then cleaning with deionized water, and immersing the monocrystalline silicon wafer into the wool making liquid in the step (1) for wool making, wherein the wool making liquid temperature is 75-90 ℃, and the wool making time is 7-15 min.
(3) And (3) soaking the textured monocrystalline silicon wafer obtained in the step (2) in deionized water at room temperature, cleaning for 1.5 min, and then performing mixed acid cleaning for 5-10 min.
(4) And soaking the acid-washed monocrystalline silicon piece in deionized water for washing for 1.5 min, then soaking the monocrystalline silicon piece in the deionized water at 85 ℃ for slowly pulling out, and drying the monocrystalline silicon piece in a drying box at 65 ℃ for 3 h.
On the basis of the scheme, the formula of the pre-cleaning liquid in the step (2) is as follows: 8 to 18mL of NaOH solution with the weight percentage concentration of 30 percent and 0.5 to 1.5mol of inorganic oxidant are added into 1L of deionized water, wherein the inorganic oxidant is K2MnO4、H2O2、KClO3、KCr2O7And NaNO3One or a mixture of several of them.
On the basis of the scheme, the mixed acid in the step (3) is HF, HCl and H2SiO3、H3PO4、H2SO4And HNO3The concentration of the mixed acid of two or more of the above two or more is 1.0-3.0 mol/L.
After the silicon wafer surface is subjected to texturing by adopting the additive and the using method, the size of a pyramid formed on the silicon wafer surface is less than 5 microns, the whole surface of the silicon wafer is uniform in color, the average reflectivity of a visible light area is lower than 10%, and the etched silicon wafer amount is less than 5%.
The invention has the advantages that: compared with the additive without additive or with IPA as additive, the additive and the use method can reduce the wool making time and obviously improve the wool making effect. The size of the textured pyramid is smaller, the distribution is more uniform, and the reflectivity of the silicon wafer is obviously reduced. The method also has beneficial effects on the finally obtained battery piece, and the yield of the battery piece is improved. In addition, the additive of the invention has no toxicity, no corrosiveness, no irritation, no combustion and explosion hazard, and no harm to human body and environment.
Drawings
FIG. 1 is a scanning electron microscope image of a textured surface of a monocrystalline silicon wafer obtained by an optimal additive formula and an optimal texturing method.
FIG. 2 is a scanning electron micrograph of a side of a single crystal silicon wafer obtained with an optimal additive formulation and an optimal texturing process.
FIG. 3 is a reflection spectrum of a textured surface of a single crystal silicon wafer obtained by an optimal additive formula and an optimal texturing method.
Detailed Description
The present invention will be described in further detail with reference to the following examples, which are provided only for illustrating the present invention and are not to be construed as limiting the present invention.
Example 1
1) Preparing an additive: 100mL of deionized water is taken as a solvent, and APG08101.0 g, 1.2g of maltose, 0.2g of sodium isophthalate, 0.3g of NaCl and 0.4g of sodium silicate are added and fully dissolved; 2) preparing a texturing solution: adding 30.0mL of NaOH solution with the weight percentage concentration of 30% into 1L of deionized water, and adding 15.0mL of additive to obtain alkaline wool making solution; 3) preparing a precleaning liquid: 10mL of NaOH solution with the weight percentage concentration of 30 percent is added into 1L of deionized water, K2MnO40.8mol, fully dissolving; 4) preparing a mixed acid solution: preparing mixed acid with the concentration of 1.5 mol/L by HF and HCl in a molar ratio of 1: 2; 5) placing the cut monocrystalline silicon piece in a precleaning solution at 65 ℃ for 5min, cleaning the monocrystalline silicon piece with deionized water, and immersing the monocrystalline silicon piece in a texturing solution at the temperature of 80 ℃ for 14 min; 6) immersing the textured monocrystalline silicon wafer in deionized water for cleaning for 1.5 min, and cleaning with mixed acidWashing for 6 min; 7) soaking the acid-washed monocrystalline silicon piece in deionized water, cleaning for 1.5 min, soaking in deionized water at 85 ℃ and slowly pulling out, and drying the finished product in a drying oven at 65 ℃ for 3 h; as can be seen from the scanning electron microscope image of the obtained texture surface of the monocrystalline silicon wafer, the size of the formed pyramid is 2-5 μm, the distribution is uniform, the reflectivity of the texture surface of the silicon wafer is low, the minimum reflectivity is 7.5%, and the etched silicon wafer amount is 4.1%.
Example 2
1) Preparing an additive: 100mL of deionized water is taken as a solvent, and 0.2g of APG12141.2g, 1.5g of cane sugar, 0.1g of sodium benzoate, 0.2g of KCl and 0.2g of sodium silicate are added and fully dissolved; 2) preparing a texturing solution: adding 35.0mL of NaOH solution with the weight percentage concentration of 30% into 1L of deionized water, and adding 12.0mL of additive to obtain alkaline wool making solution; 3) preparing a precleaning liquid: 12mL of NaOH solution with the weight percentage concentration of 30 percent is added into 1L of deionized water, and H2O21.0mol, fully dissolving; 4) preparing a mixed acid solution: HF and H are reacted3PO4Preparing mixed acid with the concentration of 2.0 mol/L according to the molar ratio of 1: 1; 5) placing the cut monocrystalline silicon piece in a precleaning solution at 65 ℃ for cleaning for 8min, then cleaning with deionized water, and then immersing the monocrystalline silicon piece in a texturing solution, wherein the texturing solution temperature is 84 ℃, and the texturing time is 12 min; 6) soaking the textured monocrystalline silicon wafer in deionized water for cleaning for 1.5 min, and then cleaning for 10min by mixing with acid; 7) and soaking the monocrystalline silicon wafer after acid washing in deionized water, washing for 1.5 min, soaking in deionized water at 85 ℃, slowly pulling out, and drying in a drying oven at 65 ℃ for 3h to obtain the textured monocrystalline silicon wafer.
Example 3
1) Preparing an additive: 100mL of deionized water is used as a solvent, and APG08141.4g, lactose 1.8g, sodium phenylacetate 0.3g and Na are added2SO40.1g of sodium silicate and 0.3g of sodium silicate are fully dissolved; 2) preparing a texturing solution: adding 25.0mL of NaOH solution with the weight percentage concentration of 30% into 1L of deionized water, and adding 15.0mL of additive to obtain alkaline wool making solution; 3) preparing a precleaning liquid: adding 15mL of 30 weight percent NaOH solution and KClO into 1L of deionized water31.4mol, fully dissolving; 4) preparing a mixed acid solution: HF and HNO3In moleThe concentration of the mixed acid is 1.8 mol/L according to the ratio of 2: 1; 5) placing the cut monocrystalline silicon piece in a precleaning solution at 65 ℃ for cleaning for 8min, then cleaning with deionized water, and then immersing the monocrystalline silicon piece in a texturing solution, wherein the temperature of the texturing solution is 88 ℃, and the texturing time is 10 min; 6) soaking the textured monocrystalline silicon wafer in deionized water for cleaning for 1.5 min, and then cleaning for 15min by mixing with acid; 7) and soaking the monocrystalline silicon wafer after acid washing in deionized water, washing for 1.5 min, soaking in deionized water at 85 ℃, slowly pulling out, and drying in a drying oven at 65 ℃ for 3h to obtain the textured monocrystalline silicon wafer.
Claims (7)
1. An additive for a monocrystalline silicon piece texturing solution, which is characterized by comprising the following components: the weight ratio of the alkyl glycoside to the water is 0.5-1.5:100, the weight ratio of the disaccharide to the water is 1.0-2.0:100, the weight ratio of the organic sodium salt to the water is 0.1-1.0:100, the weight ratio of the inorganic salt to the water is 0.1-1.0:100, and the weight ratio of the sodium silicate to the water is 0.2-1.2: 100.
2. The alkyl glycoside of claim 1, wherein the alkyl glycoside is one or more of APG0810, APG1214, APG0814, APG0816 and APG 1216; the disaccharide is one or more of maltose, cellobiose, sucrose and lactose; the organic sodium salt is one or a mixture of more of sodium acetate, sodium oxalate, sodium benzoate, sodium phenylacetate and sodium isophthalate; the inorganic salt is NaCl, KCl, Na2SO4、K2SO4、CaCl2One or a mixture of several of them.
3. A preparation method of a texturing solution for the surface of a monocrystalline silicon wafer is characterized in that 20.0-40.0mL of NaOH solution with the weight percentage concentration of 30% is added into 1L of deionized water, and 10.0-20.0mL of additive is added to obtain an alkaline texturing solution.
4. A method for texturing the surface of a monocrystalline silicon wafer comprises the following steps:
(1) cleaning the cut monocrystalline silicon wafer in a precleaning solution at 65 ℃ for 2-8min, then cleaning the monocrystalline silicon wafer with deionized water, and immersing the monocrystalline silicon wafer in the alkaline wool making solution of claim 3 for wool making, wherein the wool making temperature is 75-90 ℃, and the wool making time is 7-15 min;
(2) soaking the textured monocrystalline silicon wafer obtained in the step (1) in deionized water at room temperature, cleaning for 1.5 min, and then performing mixed acid cleaning for 5-10 min;
(3) and soaking the acid-washed monocrystalline silicon piece in deionized water, washing for 1.5 min, soaking in deionized water at 85 ℃ and slowly pulling out, and drying the textured monocrystalline silicon piece in a drying box at 65 ℃ for 3 h.
5. On the basis of the scheme, the formula of the pre-cleaning liquid in the step (1) is as follows: 8 to 18mL of NaOH solution with the weight percentage concentration of 30 percent and 0.5 to 1.5mol of inorganic oxidant are added into 1L of deionized water, wherein the inorganic oxidant is K2MnO4、H2O2、KClO3、KCr2O7And NaNO3One or a mixture of several of them.
6. On the basis of the scheme, the mixed acid in the step (2) is HF, HCl and H2SiO3、H3PO4、H2SO4And HNO3The concentration of the mixed acid of two or more of the above two or more is 1.0-3.0 mol/L.
7. Based on the claims 1-6, after the additive and the using method are adopted, the pyramid size formed on the surface of the monocrystalline silicon piece is averagely less than 4 μm, the color of the whole surface of the silicon piece is uniform, the average reflectivity is less than 10 percent, and the etched silicon piece amount is less than 5 percent.
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