CN104120040B - The cleaning solution additive of polysilicon chain-type texture-etching equipment and its application - Google Patents
The cleaning solution additive of polysilicon chain-type texture-etching equipment and its application Download PDFInfo
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- CN104120040B CN104120040B CN201410388961.4A CN201410388961A CN104120040B CN 104120040 B CN104120040 B CN 104120040B CN 201410388961 A CN201410388961 A CN 201410388961A CN 104120040 B CN104120040 B CN 104120040B
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Abstract
The invention provides a kind of cleaning solution additive of polysilicon chain-type texture-etching equipment, its component includes：The water of the sour sodium of fluorocarbon surfactant, detergent alkylate semi-annular jade pendant, hydroxyethyl cellulose and surplus.The present invention also provides a kind of cleaning fluid for polysilicon chain-type texture-etching equipment, and it contains aqueous slkali and above-mentioned cleaning solution additive, and the mass ratio of the cleaning solution additive and aqueous slkali is 0.5~5:100, the aqueous slkali is the aqueous solution of inorganic base.The cleaning fluid security and stability is high, strong to the cleaning force of etching device, and environment will not be polluted.
Description
Technical field
The present invention relates to the cleaning solution additive of polysilicon chain-type texture-etching equipment and its application.
Background technology
In current polycrystalline silicon solar cell production process, silicon chip can introduce miscellaneous in cutting technique, making herbs into wool, cleaning link etc.
Matter, can cause to produce on the devices such as silicon wafer cleaning tank, positioning roller, live roller dirty in making herbs into wool cleaning, it is easy to
Residual impurity forms the pollution for being difficult to remove in silicon chip surface；The solar battery surface pollution vestige so produced is obvious, light
Photoelectric transformation efficiency is relatively low.
The cleaning agent of conventional polysilicon chain-type texture-etching equipment is 50-70 wt % high concentration of hydrofluoric acid at present, and hydrofluoric acid is used
Amount is big, and time-consuming, and cleaning performance is not highly desirable, and severe contamination is also result in environment.
The content of the invention
It is an object of the invention to provide a kind of cleaning solution additive of polysilicon chain-type texture-etching equipment and its application, this is clear
Washing lotion security and stability is high, strong to the cleaning force of etching device, and environment will not be polluted.
To achieve the above object, the present invention provides a kind of cleaning solution additive of polysilicon chain-type texture-etching equipment, its component
Including：The water of the sour sodium of fluorocarbon surfactant, detergent alkylate semi-annular jade pendant, hydroxyethyl cellulose and surplus.
It is preferred that, the weight/mass percentage composition of each component is in the cleaning solution additive of above-mentioned polysilicon chain-type texture-etching equipment：
Fluorocarbon surfactant：0.01%-0.1%, detergent alkylate semi-annular jade pendant acid sodium：0.5%-2%, hydroxyethyl cellulose：0.1%-1%, surplus
For water.
It is preferred that, above-mentioned water is deionized water.
The present invention also provides a kind of cleaning fluid for polysilicon chain-type texture-etching equipment, and it contains aqueous slkali and above-mentioned cleaning
Solution additive, the mass ratio of the cleaning solution additive and aqueous slkali is 0.5~5:100, the aqueous slkali is inorganic base or had
The aqueous solution of machine alkali.
It is preferred that, the aqueous slkali is 0.5~3wt% sodium hydroxide or potassium hydroxide aqueous solution.
The advantages of the present invention are：There is provided a kind of polysilicon chain-type texture-etching equipment cleaning solution additive and
It is applied, and the fluorocarbon surfactant in the cleaning solution additive has high surface-active and stability；Alkyl benzene sulphonate
Sodium is more sensitive to the water hardness, not oxidizable, and foaming power is strong, and detergency is high；Alkyl benzene sulphonate is received to particulate fouling and oily dirt
There is significant clean effect.Triplicity decontamination is faster more thoroughly, and will not introduce other pollutions.
Using the cleaning fluid after this additive, it is not necessary to which extra heating, penetrating power is strong, can penetrate into greasy dirt bottom, make
Thorough stripping；It is corrosion-free safely to materials such as rubber, plastics, resins；Cell piece table good to equipment cleaning performance, producing
Face is dirty to be greatly reduced, and battery efficiency is high, and environment will not be polluted.
Embodiment
With reference to embodiment, the embodiment to the present invention is further described.Following examples are only used for more
Plus technical scheme is clearly demonstrated, and can not be limited the scope of the invention with this.
The technical scheme that the present invention is embodied is：
Embodiment 1
A kind of preparation method of the cleaning fluid of polysilicon chain-type texture-etching equipment, takes following processing step：
1）Configure flocking additive：By 0.01g fluorocarbon surfactants, the sour sodium of 0.5g detergent alkylates semi-annular jade pendant, 0.1g hydroxyl second
Base cellulose is added in deionized water, obtains the cleaning fluid additive solution of 100g polysilicon chain-type texture-etching equipments.
2）Configure cleaning fluid：100g NaOH is dissolved in deionized water, 20kg aqueous slkalis are obtained；By step 1）It is made
100g cleaning solution additives are dissolved in aqueous slkali, obtain the cleaning fluid for polysilicon chain-type texture-etching equipment.
The cleaning fluid configured is used to soak rinse bath, positioning roller, live roller by the present embodiment when being tested
Bubble cleaning about 50 minutes, shown in test result table 1.
Table 1
Embodiment 2
A kind of preparation method of the cleaning fluid of polysilicon chain-type texture-etching equipment, takes following processing step：
1）Configure flocking additive：By 1g fluorocarbon surfactants, the sour sodium of 20g detergent alkylates semi-annular jade pendant, 10g hydroxy ethyl fibers
Element is added in deionized water, obtains the cleaning fluid additive solution of 1kg polysilicon chain-type texture-etching equipments.
2）Configure cleaning fluid：600g NaOH is dissolved in deionized water, 20kg aqueous slkalis are obtained；By step 1）It is made
1kg cleaning solution additives are dissolved in aqueous slkali, obtain the cleaning fluid for polysilicon chain-type texture-etching equipment.
The cleaning fluid configured is used to soak rinse bath, positioning roller, live roller by the present embodiment when being tested
Bubble cleaning 60 minutes, shown in test result table 2.
Table 2
Embodiment 3
A kind of preparation method of the cleaning fluid of polysilicon chain-type texture-etching equipment, takes following processing step：
1）Configure flocking additive：By 0.3g fluorocarbon surfactants, the sour sodium of 6g detergent alkylates semi-annular jade pendant, 3g hydroxy ethyl fibers
Element is added in deionized water, obtains the cleaning fluid additive solution of 600g polysilicon chain-type texture-etching equipments.
2）Configure cleaning fluid：400g NaOH is dissolved in deionized water, 20kg aqueous slkalis are obtained；By step 1）It is made
600g cleaning solution additives are dissolved in aqueous slkali, obtain the cleaning fluid for polysilicon chain-type texture-etching equipment.
The cleaning fluid configured is used to soak rinse bath, positioning roller, live roller by the present embodiment when being tested
Bubble cleaning 70 minutes, shown in test result table 3.
Table 3
Described above is only the preferred embodiment of the present invention, it is noted that for the ordinary skill people of the art
For member, without departing from the technical principles of the invention, some improvements and modifications can also be made, these improvements and modifications
Also it should be regarded as protection scope of the present invention.
Claims (4)
1. the cleaning solution additive of polysilicon chain-type texture-etching equipment, it is characterised in that：Each component in the cleaning solution additive
Weight/mass percentage composition is：Fluorocarbon surfactant：0.01%-0.1%, neopelex：0.5%-2%, hydroxy ethyl fiber
Element：0.1%-1%, surplus is water.
2. the cleaning solution additive of polysilicon chain-type texture-etching equipment according to claim 1, it is characterised in that the water is
Deionized water.
3. the cleaning fluid for polysilicon chain-type texture-etching equipment, it is characterised in that it contains described in aqueous slkali and claim 2
Solution additive is cleaned, the mass ratio of the cleaning solution additive and aqueous slkali is 0.5~5:100, the aqueous slkali is inorganic base
The aqueous solution.
4. the cleaning fluid according to claim 3 for polysilicon chain-type texture-etching equipment, it is characterised in that the aqueous slkali
For 0.5wt%~3wt% sodium hydroxide or potassium hydroxide aqueous solution.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410388961.4A CN104120040B (en) | 2014-08-08 | 2014-08-08 | The cleaning solution additive of polysilicon chain-type texture-etching equipment and its application |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410388961.4A CN104120040B (en) | 2014-08-08 | 2014-08-08 | The cleaning solution additive of polysilicon chain-type texture-etching equipment and its application |
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| CN104120040A CN104120040A (en) | 2014-10-29 |
| CN104120040B true CN104120040B (en) | 2017-08-01 |
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Citations (7)
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| CN1186848A (en) * | 1996-12-30 | 1998-07-08 | 李德新 | Detergent containing organic fluorine surfactant |
| CN101681130A (en) * | 2007-03-31 | 2010-03-24 | 高级技术材料公司 | Methods for stripping material for wafer reclamation |
| CN101735903A (en) * | 2008-11-04 | 2010-06-16 | 江阴市润玛电子材料有限公司 | Electronic cleaning agent special for solar energy photovoltaic component |
| JP2012248738A (en) * | 2011-05-30 | 2012-12-13 | Dai Ichi Kogyo Seiyaku Co Ltd | Surface treatment agent composition for silicon wafer |
| CN103394484A (en) * | 2013-08-02 | 2013-11-20 | 常州时创能源科技有限公司 | Cleaning technology after polycrystalline silicon solar cell silicon wafer acid texturing |
| CN103614249A (en) * | 2013-12-03 | 2014-03-05 | 常州时创能源科技有限公司 | Alkaline cleaning additive used after acid texturing of polycrystalline silicon wafers, and using method thereof |
| CN103952246A (en) * | 2014-03-03 | 2014-07-30 | 西安通鑫半导体辅料有限公司 | Cleaning fluid used in solar silicon wafer manufacturing |
-
2014
- 2014-08-08 CN CN201410388961.4A patent/CN104120040B/en active Active
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1186848A (en) * | 1996-12-30 | 1998-07-08 | 李德新 | Detergent containing organic fluorine surfactant |
| CN101681130A (en) * | 2007-03-31 | 2010-03-24 | 高级技术材料公司 | Methods for stripping material for wafer reclamation |
| CN101735903A (en) * | 2008-11-04 | 2010-06-16 | 江阴市润玛电子材料有限公司 | Electronic cleaning agent special for solar energy photovoltaic component |
| JP2012248738A (en) * | 2011-05-30 | 2012-12-13 | Dai Ichi Kogyo Seiyaku Co Ltd | Surface treatment agent composition for silicon wafer |
| CN103394484A (en) * | 2013-08-02 | 2013-11-20 | 常州时创能源科技有限公司 | Cleaning technology after polycrystalline silicon solar cell silicon wafer acid texturing |
| CN103614249A (en) * | 2013-12-03 | 2014-03-05 | 常州时创能源科技有限公司 | Alkaline cleaning additive used after acid texturing of polycrystalline silicon wafers, and using method thereof |
| CN103952246A (en) * | 2014-03-03 | 2014-07-30 | 西安通鑫半导体辅料有限公司 | Cleaning fluid used in solar silicon wafer manufacturing |
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| CN104120040A (en) | 2014-10-29 |
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Address after: Liyang City, Jiangsu province 213300 Li Cheng Zhen Wu Changzhou city Tandu Road No. 8 Patentee after: Changzhou Shichuang Energy Co., Ltd Address before: 213300 Jiangsu city of Changzhou province Liyang Liyang Town of Wuhu Shanghai Road No. 168 building C Patentee before: CHANGZHOU SHICHUANG ENERGY TECHNOLOGY Co.,Ltd. |
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