CN1787178A - Method for cleaning gallium arsenide crystal chip - Google Patents
Method for cleaning gallium arsenide crystal chip Download PDFInfo
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- CN1787178A CN1787178A CN 200410096843 CN200410096843A CN1787178A CN 1787178 A CN1787178 A CN 1787178A CN 200410096843 CN200410096843 CN 200410096843 CN 200410096843 A CN200410096843 A CN 200410096843A CN 1787178 A CN1787178 A CN 1787178A
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Abstract
The invention discloses a GaAs wafer cleaning method, comprising the following basic steps of: (1) adopting first solution to make first megasonic cleaning; (2) primary rinsing'(3) primary drying; (4)cleaning with UV ozone cleaner; (5) adopting second solution to make second megasonic cleaning; (6) secondary rinsing; (7) secondary drying. The first solution is a basic water solution having light corroding effect on GaAs; the second solution is also a basic solution having corroding effect on the oxidizing layer of GaAs. The invention can eliminate most particles by the step (1), remove organic matters basically by the step (4), thoroughly remove the absorbed particles and metallic ions, form an As-rich surface on the GaAs surface and directly make epitaxial growth. The invention can not destroy the polished surfaces of the polished GaAs wafers.
Description
Technical field the present invention relates to a kind of cleaning method of semiconductor wafer, particularly a kind of cleaning method of gallium arsenide wafer.
Background technology is in recent years along with the fast development of science and technology, and is more and more urgent with the demand of optical fiber receive module, high speed and high-frequency semiconductor device to semiconductor laser, optical fiber communication that such as GaAs-group iii v compound semiconductor material is made.Preparing the gallium arsenide wafer surface of cleaning, is the key of making this class device.The most important contamination of semiconductor wafer surface has particle, organic substance and metal ion.These stain and attaching of wafer can be divided into physical absorption and chemisorbed.
To silicon wafer, the general cleaning of a cover has been arranged, promptly Kern and Puotinen (RCA Review, pp.187-206, June (1970)) the RCA technology that proposes.Nowadays, though some improvement of the cleaning of silicon wafer mostly is based on this.This technology is cleaned particle with ammoniacal liquor, aqueous hydrogen peroxide solution (SC-1), removes metal with hydrochloric acid, aqueous hydrogen peroxide solution (SC-2), removes organic substance with sulfuric acid, aqueous hydrogen peroxide solution (SC-3).
GaAs is active owing to surface chemical property, the cleaning that can not simply apply mechanically silicon.Generally use sulfuric acid, aqueous hydrogen peroxide solution solution that GaAs is cleaned now, the volume ratio of sulfuric acid, hydrogen peroxide, water is 5: 1: 1 or 8: 1: 1; Also the someone uses rare ammoniacal liquor, aqueous hydrogen peroxide solution to clean.Because these solution are strong to the GaAs corrosiveness, make the surface roughness variation, even destroy polished surface.Up to the present, also do not form the standard method that a cover cleans GaAs.
Fresh gallium arsenide surface is easy to oxidation and generates Ga in air
2O
3And As
2O
3, particularly generate Ga easily
2O
3So, Ga in the oxide layer
2O
3Account for major part, wherein be mingled with the As atom.(J.Vac.Sci.Technol.A 7,3,1989) such as researcher Z.H.Lu and C.Lagarde discover that its oxide layer of the gallium arsenide surface of rich arsenic is thinner, are more suitable for subsequently epitaxial growing.So it is cleaning is prepared the gallium arsenide surface of rich arsenic,, even more ideal to technologies such as follow-up extensions with respect to the surface of stoichiometric proportion balance and rich gallium.
Summary of the invention the object of the present invention is to provide a cover can effectively remove the cleaning that GaAs polished silicon wafer surface particles, organic substance, metal etc. stain.Adopt the inventive method to clean gallium arsenide wafer, the phenomenon of polished surface can not occur destroying.
Cleaning process of the present invention may further comprise the steps:
(1) gallium arsenide wafer is put into million sound tracks that first solution is housed, added mega sonic wave and carry out million cleanings first time;
(2) take out wafer, water carries out the rinsing first time;
(3) after rinsing finishes, wafer is carried out the dried first time;
(4) dried wafer is put into the UV ozone cleaning machine and clean a period of time;
(5) take out wafer in the UV ozone cleaning machine and put into million sound tracks that second solution is housed, add mega sonic wave and carry out million cleanings second time;
(6) take out wafer, water carries out the rinsing second time;
(7) after rinsing finishes, wafer is carried out the dried second time.
Used first solution is alkaline aqueous solution in the above-mentioned steps (1), can use a kind of or its mixing in inorganic base, organic base and the basic salt.Inorganic base comprises NaOH, KOH, NH
4OH etc., organic base can be TMAH etc., and basic salt can be Na
2CO3, NaHCO3 etc., the concentration of each composition in solution is between 10ppm to 10%.
The time that wafer cleans in the UV ozone cleaning machine in the above-mentioned steps (4) is preferably in 1～15 minute scope, can be according to the light and heavy degree adjustment of surface contamination.If surface contamination is more serious, the scavenging period that can extend, but scavenging period is oversize, can cause wafer surface roughness variation.
Used second solution is for comprising organic acid acidic aqueous solutions such as inorganic acids such as hydrochloric acid, hydrofluoric acid or citric acid in the above-mentioned steps (5), and the concentration of each composition in solution is between 10ppm to 10%.
Clean for million with million cleanings for the second time for the first time and all carry out in 15～65 temperature ranges, scavenging period is 1～10 minute, and the frequency of used mega sonic wave is in 600KHz～1000KHz scope, and the power of mega sonic wave is in 100～400W scope.
Deionized water is preferably all selected in rinsing for the first time and rinsing for the second time for use, and carries out in million fast emissions groove (QDR) is housed.
Isopropyl alcohol (IPA) steam drying is perhaps used in dried and all available drier drying of dried for the second time for the first time.
In order to improve cleaning performance, can add surfactant in first solution and second solution, ionic or nonionic all can, concentration is between 10ppm to 10%.First solution can disposablely use, and also can reuse behind the circulating filtration; Second solution is owing to being final cleaning, so best disposable use.
The inventive method not only can be used for cleaning gallium arsenide wafer, also can be used for cleaning other compound semiconductor wafer.
First solution has slight corrosiveness to GaAs, and second solution then has corrosiveness to the oxide layer of GaAs.Under the effect of first solution and million acoustic energies, most of particle be can remove in the step (1), but still partial organic substances and bigger particle and the metal ion of adsorption strength left.Organic substance can be removed substantially by step (4), and be generated layer of oxide layer, particle and the metal ion that adsorbs is wrapped in the oxide layer in wafer surface.In the step (5), second solution erodes oxide layer, thoroughly the particle and the metal ion of absorption is removed by million acoustic energies.Step (5) also forms rich arsenic surface at gallium arsenide surface, can directly carry out epitaxial growth.
The present invention has following beneficial effect:
1, can effectively remove wafer surface particle, metal, organic substance, obtain the height clean Surface.
2, do not destroy wafer surface.
3, the surface reaches and exempts to clean (Epi-ready) requirement.
The present invention is described further below in conjunction with specific embodiment.
Embodiment first embodiment:
In this example, first solution is the KOH aqueous solution, and concentration is 2000ppm, is added with surfactant Wako 601 in the solution, and concentration is 200ppm; Second solution is hydrochloric acid solution, and concentration is 200ppm, is added with surfactant Wako 601 in the solution, and concentration is 30ppm.Can finish cleaning by following steps to wafer:
(1) gaily decorated basket of 4 inches gallium arsenide wafers after the firm polishing will be housed, and put into million sound tracks that first solution is housed and clean, 30 ℃ of temperature, megasonic frequency are 860KHz, and power is 300 watts, scavenging period 5 minutes.
(2) the fast emissions groove of the gaily decorated basket being put into million (QDR) carries out rinsing, arranges soon 3 times.
(3) gaily decorated basket being put into drier dries.
(4) wafer is put into the UV ozone cleaning machine and cleaned, scavenging period is 5 minutes.
(5) gaily decorated basket that wafer will be housed is put into the million sound tracks cleaning that second solution is housed, and 45 ℃ of temperature, wave frequency are 860KHz, 300 watts of million acoustical powers, scavenging period 5 minutes.
(6) the fast emissions groove of the gaily decorated basket being put into million (QDR) carries out rinsing, arranges soon 3 times.
(7) gaily decorated basket being put into drier dries.
With Tencor 6400 surface analyzers the wafer after above-mentioned steps is cleaned is detected, wafer surface retain greater than 0.2 micron granule number average out to 21.
Second embodiment:
In this example, first solution is the NaOH aqueous solution, and concentration is 2000ppm, is added with surfactant Wako 601 in the solution, and concentration is 200ppm; Second solution is hydrofluoric acid solution, and concentration is 2000ppm, is added with surfactant Wako 601 in the solution, and concentration is 30ppm.Can finish cleaning by following steps to wafer:
(1) gaily decorated basket of 4 inches gallium arsenide wafers after the firm polishing will be housed, and put into million sound tracks that first solution is housed and clean, 30 ℃ of temperature, megasonic frequency are 860KHz, and power is 300 watts, scavenging period 5 minutes.
(2) the QDR groove of the gaily decorated basket being put into million carries out rinsing, arranges soon 3 times.
(3) with wafer isopropyl alcohol (IPA) steam drying.
(4) wafer is put into the UV ozone cleaning machine and cleaned, scavenging period is 5 minutes.
(5) gaily decorated basket that wafer will be housed is put into the million sound tracks cleaning that second solution is housed, and 45 ℃ of temperature, wave frequency are 860KHz, 300 watts of million acoustical powers, scavenging period 5 minutes.
(6) the QDR groove of the gaily decorated basket being put into million carries out rinsing, arranges soon 3 times.
(7) gaily decorated basket being put into drier dries.
With Tencor 6400 surface analyzers the wafer after above-mentioned steps is cleaned is detected, wafer surface retain greater than 0.2 micron granule number average out to 101.
The 3rd embodiment
In this example, first solution is the TMAH aqueous solution, and concentration is 4000ppm, is added with surfactant Wako 601 in the solution, and concentration is 200ppm; Second solution is hydrochloric acid solution, and concentration is 200ppm, is added with surfactant Wako 601 in the solution, and concentration is 30ppm.Can finish cleaning by following steps to wafer:
(1) gaily decorated basket of 4 inches gallium arsenide wafers after the firm polishing will be housed, and put into million sound tracks that first solution is housed and clean, 30 ℃ of temperature, megasonic frequency are 860KHz, and power is 300 watts, scavenging period 5 minutes.
(2) the QDR groove of the gaily decorated basket being put into million carries out rinsing, arranges soon 3 times.
(3) with wafer isopropyl alcohol (IPA) steam drying.
(4) wafer is put into the UV ozone cleaning machine and cleaned, scavenging period is 5 minutes.
(5) gaily decorated basket that wafer will be housed is put into the million sound tracks cleaning that second solution is housed, and 45 ℃ of temperature, wave frequency are 860KHz, 300 watts of million acoustical powers, scavenging period 5 minutes.
(6) the QDR groove of the gaily decorated basket being put into million carries out rinsing, arranges soon 3 times.
(7) with wafer isopropyl alcohol (IPA) steam drying.
With Tencor 6400 surface analyzers the wafer after above-mentioned steps is cleaned is detected, wafer surface retain greater than 0.2 micron granule number average out to 206.
Claims (8)
1, a kind of method for cleaning gallium arsenide crystal chip is characterized in that may further comprise the steps:
(1) gallium arsenide wafer is put into million sound tracks that first solution is housed, added mega sonic wave and carry out million cleanings first time;
(2) take out wafer, water carries out the rinsing first time;
(3) after rinsing finishes, wafer is carried out the dried first time;
(4) dried wafer is put into the UV ozone cleaning machine and clean a period of time;
(5) take out wafer in the UV ozone cleaning machine and put into million sound tracks that second solution is housed, add mega sonic wave and carry out million cleanings second time;
(6) take out wafer, water carries out the rinsing second time;
(7) after rinsing finishes, wafer is carried out the dried second time;
Used first solution is alkaline aqueous solution in the described step (1), and used second solution is acidic aqueous solution in the described step (5).
2, method for cleaning gallium arsenide crystal chip according to claim 1 is characterized in that, described first solution is the aqueous solution of a kind of or its mixing in inorganic base, organic base and the basic salt; Inorganic base can be NaOH, KOH or NH
4OH, organic base can be TMAH, and basic salt can be Na
2CO3 or NaHCO3, the concentration of each composition in solution is between 10ppm to 10%;
Described second solution is the inorganic acid or the organic acid aqueous solution; Inorganic acid can be hydrochloric acid or hydrofluoric acid, and organic acid can be a citric acid, and the concentration of each composition in solution is between 10ppm to 10%.
3, method for cleaning gallium arsenide crystal chip according to claim 2 is characterized in that, can add ionic or nonionic surface active agent in first solution and second solution, and concentration is between 10ppm to 10%.
4, according to claim 1 or 2 or 3 described method for cleaning gallium arsenide crystal chip, it is characterized in that, clean for million with million cleanings for the second time for the first time and all in 15～65 temperature ranges, carry out, scavenging period is 1～10 minute, the frequency of used mega sonic wave is in 600KHz～1000KHz scope, and the power of mega sonic wave is in 100～400W scope.
5, method for cleaning gallium arsenide crystal chip according to claim 4 is characterized in that, deionized water is all selected in rinsing for the first time and rinsing for the second time for use, and carries out in million fast emissions groove is housed;
The time that wafer cleans in the UV ozone cleaning machine is in 1～15 minute scope;
The IPA vapor drying is perhaps used in dried and all available drier drying of dried for the second time for the first time.
6, method for cleaning gallium arsenide crystal chip according to claim 5 is characterized in that, first solution is the KOH aqueous solution, and concentration is 2000ppm, is added with surfactant Wako 601 in the solution, and concentration is 200ppm; Second solution is hydrochloric acid solution, and concentration is 200ppm, is added with surfactant Wako 601 in the solution, and concentration is 30ppm;
Clean for million for the first time 30 ℃ of following scavenging periods of temperature 5 minutes, megasonic frequency is 860KHz, and power is 300 watts; Wafer scavenging period in the UV ozone cleaning machine is 5 minutes;
Clean for million for the second time 45 ℃ of following scavenging periods of temperature 5 minutes, megasonic frequency is 860KHz, and power is 300 watts;
For the first time dried and for the second time dried all dry with drier.
7, method for cleaning gallium arsenide crystal chip according to claim 5 is characterized in that, first solution is the NaOH aqueous solution, and concentration is 2000ppm, is added with surfactant Wako 601 in the solution, and concentration is 200ppm; Second solution is hydrofluoric acid solution, and concentration is 2000ppm, is added with surfactant Wako 601 in the solution, and concentration is 30ppm;
Clean for million for the first time 30 ℃ of following scavenging periods of temperature 5 minutes, megasonic frequency is 860KHz, and power is 300 watts; Wafer scavenging period in the UV ozone cleaning machine is 5 minutes;
Clean for million for the second time 45 ℃ of following scavenging periods of temperature 5 minutes, megasonic frequency is 860KHz, and power is 300 watts;
Dried IPA vapor drying for the first time, the second time, dried dried with drier.
8, method for cleaning gallium arsenide crystal chip according to claim 5 is characterized in that, first solution is the TMAH aqueous solution, and concentration is 4000ppm, is added with surfactant Wako 601 in the solution, and concentration is 200ppm; Second solution is hydrochloric acid solution, and concentration is 200ppm, is added with surfactant Wako 601 in the solution, and concentration is 30ppm;
Clean for million for the first time 30 ℃ of following scavenging periods of temperature 5 minutes, megasonic frequency is 860KHz, and power is 300 watts; Wafer scavenging period in the UV ozone cleaning machine is 5 minutes;
Clean for million for the second time 45 ℃ of following scavenging periods of temperature 5 minutes, megasonic frequency is 860KHz, and power is 300 watts;
For the first time dried and for the second time dried all use the IPA vapor drying.
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| CNB2004100968432A CN100428419C (en) | 2004-12-08 | 2004-12-08 | Method for cleaning gallium arsenide crystal chip |
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|---|---|---|---|
| CNB2004100968432A CN100428419C (en) | 2004-12-08 | 2004-12-08 | Method for cleaning gallium arsenide crystal chip |
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| CN100428419C CN100428419C (en) | 2008-10-22 |
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