CN102468126B - Wafer cleaning method - Google Patents
Wafer cleaning method Download PDFInfo
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- CN102468126B CN102468126B CN 201010533943 CN201010533943A CN102468126B CN 102468126 B CN102468126 B CN 102468126B CN 201010533943 CN201010533943 CN 201010533943 CN 201010533943 A CN201010533943 A CN 201010533943A CN 102468126 B CN102468126 B CN 102468126B
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Abstract
The invention relates to a wafer cleaning method. The method comprises the following steps: detecting whether a time interval of solution changing of two adjacent etching solutions is greater than or equal to a preset time; if the time interval is greater than or equal to the preset time, using etching solution to clean the wafer. By using the method of the invention, the changed etching solutioncan not perform over etching to a polysilicon medium layer which is a back side of the wafer so that a wafer backside can not be floating. A process is simple. Equipment does not need to be replaced or optimized. Costs can not be increased.
Description
[technical field]
The present invention relates to semiconductor technology, particularly a kind of circular piece cleaning method.
[background technology]
In the semiconductor technology, need to adopt etching solution that disk is cleaned, with residual polymer (PLOYMER) behind the removal dry etching, generally adopt organic amine alkali solvent EKC to clean.Occur sometimes the severely subnormal phenomenon that the brilliant back of the body of disk grows dim after yet this operation is finished, and brilliant back of the body abnormal graph mainly contains multiple robotic arm shape.
[summary of the invention]
Based on this, be necessary to provide a kind of circular piece cleaning method, reduce the brilliant back of the body of disk and produce defective.
A kind of circular piece cleaning method may further comprise the steps:
Detection apart from time interval that etching solution changes liquid last time whether more than or equal to Preset Time, if then adopt etching solution that disk is cleaned.
Preferably, described method also comprises step: when detecting the described time interval during less than Preset Time, proceed to detect.
Preferably, described etching solution is organic amine alkali solvent.
Preferably, described organic amine alkali solvent is EKC270, and described Preset Time is 4 hours.
Preferably, described disk comprises via layer, metal level and pad layer, and described etching solution comprises the concrete steps that disk cleans:
Adopt etching solution to clean described via layer.
Preferably, the time of described cleaning via layer is 40 minutes.
Preferably, described etching solution comprises the concrete steps that disk cleans:
Adopt etching solution to clean described metal level.
Preferably, the time of described clean metal layer is 20 minutes.
Preferably, described etching solution comprises the concrete steps that disk cleans:
Adopt etching solution to clean described pad layer.
Preferably, the time of described cleaning pad layer is 40 minutes.
Above-mentioned circular piece cleaning method, detect in advance adjacent twice etching solution and change time interval between the liquid whether more than or equal to Preset Time, if then adopt etching solution that disk is cleaned, avoid just changing etching solution to the polycrystalline silicon medium layer excessive erosion at the disk back side, and caused the brilliant back of the body to grow dim.Technological process is simple, does not need to change or optimized device, can not increase cost.
[description of drawings]
Fig. 1 is circular piece cleaning method flow chart among the embodiment;
Fig. 2 be among the embodiment EKC270 to the etch-rate schematic diagram of polycrystalline silicon medium;
Fig. 3 be among the embodiment EKC270 to the etch-rate schematic diagram of oxide layer;
Fig. 4 is the view that EKC270 cleans the polycrystalline silicon medium of oxide layer among the embodiment.
[embodiment]
As shown in Figure 1, a kind of circular piece cleaning method may further comprise the steps:
Step S10 detects adjacent twice etching solution and whether changes time interval between the liquid more than or equal to Preset Time, if then execution in step S20 if not, then continues to detect.Namely before carrying out traditional etching solution cleaning step S20, increase step S10.This Preset Time is according to etching solution the experimental result of the etch-rate of disk to be set.The EKC270 that produces take the DuPont Electronic Technologies subordinate's of company EKC Technology company is as etching solution, and then this Preset Time is 4 hours according to experimental result, and can there be suitable deviation this time.In addition, in the time interval that the life cycle of etching solution (life time) is changed liquid for adjacent twice etching solution, can preset.General disk can stay on the crystalline substance back of the body surface of its disk and to grow dim after etching solution cleans, and brilliant knapsack is drawn together polycrystalline silicon medium (U-PLOY) and oxide layer (OXIDE) medium.
As shown in Figure 2, experiment shows, when EKC270(65 last time ℃～75 ℃ of distances) time of changing liquid during less than 4 hours, be that adjacent twice EKC270 changes time interval between the liquid during less than 4 hours, fast and homogeneity is poor to the corrosion rate of polycrystalline silicon medium, along with the increase of time of changing liquid of distance EKC270 last time, EKC270 reduces gradually to the corrosion rate of polycrystalline silicon medium, when time of changing liquid of distance EKC270 last time during more than or equal to 4 hours, corrosion rate is about
Corrosion rate is slower like this, and relatively stable, and the corrosion homogeneity is better, is difficult for forming growing dim of the brilliant back of the body, has reduced the appearance of brilliant back of the body defective.
The composition of EKC270 comprises amido organic substance (R-NH
2), isopropanolamine (MIPA), coconut oleoyl amine (MEA), diethyleneglycolamin (DGA), hexamethylene diamine (HDA), catechol (Catechol) and water (H
2O).EKC270 has corrosion reaction to polycrystalline silicon medium, and the speed of corrosion depends on the content of water, and such as table 1, the content of water is higher, and then EKC270 is faster to the polycrystalline silicon medium corrosion rate.
Table 1
In addition, as shown in Figure 3, EKC270 is very low to the corrosion rate of oxide layer medium, is approximately
Result schematic diagram when to be EKC270 to the polycrystalline silicon medium of oxide layer clean such as Fig. 4.
Step S20 adopts etching solution to clean disk.Behind the via layer of disk (VIA), metal level (METAL) and pad layer (PAD) the process dry etching (dry etch), produce polymer (PLOYMER) at via layer, metal level and pad layer.Adopt etching solution that the concrete steps that disk cleans are comprised:
Adopt etching solution to clean the polymer that produces on the via layer, scavenging period is 40 minutes.
Adopt the polymer that produces on the etching solution clean metal layer, scavenging period is 20 minutes.
Adopt etching solution to clean the polymer that produces on the pad layer, scavenging period is 40 minutes.
Above-mentioned scavenging period can deviation 1 to 2 minute.
Above-mentioned circular piece cleaning method, detect in advance adjacent twice etching solution and change time interval between the liquid whether more than or equal to Preset Time, if then adopt etching solution that disk is cleaned, avoided using and just changed etching solution to the polycrystalline silicon medium layer excessive erosion at the disk back side, and caused the brilliant back of the body to grow dim.Technological process is simple, does not need to change or optimized device, can not increase cost.
The above embodiment has only expressed several execution mode of the present invention, and it describes comparatively concrete and detailed, but can not therefore be interpreted as the restriction to claim of the present invention.Should be pointed out that for the person of ordinary skill of the art without departing from the inventive concept of the premise, can also make some distortion and improvement, these all belong to protection scope of the present invention.Therefore, the protection range of patent of the present invention should be as the criterion with claims.
Claims (10)
1. circular piece cleaning method may further comprise the steps:
Detection is apart from time interval that last time, etching solution changed liquid;
When equaling Preset Time, adopt etching solution that disk is cleaned described.
2. circular piece cleaning method according to claim 1 is characterized in that, described method also comprises step: when described time interval during less than Preset Time, proceed to detect.
3. according to right 1 or 2 described circular piece cleaning methods, it is characterized in that described etching solution is organic amine alkali solvent.
4. according to right 3 described circular piece cleaning methods, it is characterized in that described organic amine alkali solvent is EKC270, described Preset Time is 4 hours.
5. circular piece cleaning method according to claim 1 is characterized in that, described disk comprises via layer, metal level and pad layer, and described etching solution comprises the concrete steps that disk cleans:
Adopt etching solution to clean described via layer.
6. circular piece cleaning method according to claim 5 is characterized in that, the time of described cleaning via layer is 40 minutes.
7. circular piece cleaning method according to claim 5 is characterized in that, described etching solution comprises the concrete steps that disk cleans:
Adopt etching solution to clean described metal level.
8. circular piece cleaning method according to claim 7 is characterized in that, the time of described clean metal layer is 20 minutes.
9. circular piece cleaning method according to claim 5 is characterized in that, described etching solution comprises the concrete steps that disk cleans:
Adopt etching solution to clean described pad layer.
10. circular piece cleaning method according to claim 9 is characterized in that, the time of described cleaning pad layer is 40 minutes.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201010533943 CN102468126B (en) | 2010-11-05 | 2010-11-05 | Wafer cleaning method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201010533943 CN102468126B (en) | 2010-11-05 | 2010-11-05 | Wafer cleaning method |
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| CN102468126A CN102468126A (en) | 2012-05-23 |
| CN102468126B true CN102468126B (en) | 2013-10-23 |
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| CN 201010533943 Active CN102468126B (en) | 2010-11-05 | 2010-11-05 | Wafer cleaning method |
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Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN108067481A (en) * | 2016-11-11 | 2018-05-25 | 广州康昕瑞基因健康科技有限公司 | Gene sequencer cleaning method and system |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1393912A (en) * | 2001-06-26 | 2003-01-29 | 旺宏电子股份有限公司 | Method for washing semiconductor wafer |
| CN1591779A (en) * | 2003-09-05 | 2005-03-09 | 株式会社东芝 | Method and device for cleaning chips |
| CN1787178A (en) * | 2004-12-08 | 2006-06-14 | 中国电子科技集团公司第四十六研究所 | Method for cleaning gallium arsenide crystal chip |
| CN101359578A (en) * | 2007-08-05 | 2009-02-04 | 中芯国际集成电路制造(上海)有限公司 | Wafer cleaning method and apparatus |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2006096814A2 (en) * | 2005-03-08 | 2006-09-14 | Akrion, Inc. | Method and system for processing substrates with sonic energy that reduces or eliminates damage to semiconductor devices |
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Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1393912A (en) * | 2001-06-26 | 2003-01-29 | 旺宏电子股份有限公司 | Method for washing semiconductor wafer |
| CN1591779A (en) * | 2003-09-05 | 2005-03-09 | 株式会社东芝 | Method and device for cleaning chips |
| CN1787178A (en) * | 2004-12-08 | 2006-06-14 | 中国电子科技集团公司第四十六研究所 | Method for cleaning gallium arsenide crystal chip |
| CN101359578A (en) * | 2007-08-05 | 2009-02-04 | 中芯国际集成电路制造(上海)有限公司 | Wafer cleaning method and apparatus |
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| CN102468126A (en) | 2012-05-23 |
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Effective date of registration: 20170927 Address after: 214028 Xinzhou Road, Wuxi national hi tech Industrial Development Zone, Jiangsu, China, No. 8 Patentee after: Wuxi Huarun Shanghua Technology Co., Ltd. Address before: 214028 Wuxi provincial high tech Industrial Development Zone, Hanjiang Road, No. 5, Jiangsu, China Co-patentee before: Wuxi Huarun Shanghua Technology Co., Ltd. Patentee before: Wuxi CSMC Semiconductor Co., Ltd. |