CN104078327A - Cleaning method after ion implantation - Google Patents
Cleaning method after ion implantation Download PDFInfo
- Publication number
- CN104078327A CN104078327A CN201410163488.XA CN201410163488A CN104078327A CN 104078327 A CN104078327 A CN 104078327A CN 201410163488 A CN201410163488 A CN 201410163488A CN 104078327 A CN104078327 A CN 104078327A
- Authority
- CN
- China
- Prior art keywords
- semiconductor substrate
- cleaning method
- solution
- implantation
- cleaning
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004140 cleaning Methods 0.000 title claims abstract description 30
- 238000000034 method Methods 0.000 title claims abstract description 26
- 238000005468 ion implantation Methods 0.000 title abstract description 8
- 239000004065 semiconductor Substances 0.000 claims abstract description 63
- 239000000758 substrate Substances 0.000 claims abstract description 54
- 239000000243 solution Substances 0.000 claims description 26
- 238000002513 implantation Methods 0.000 claims description 20
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 12
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims description 6
- 239000008367 deionised water Substances 0.000 claims description 6
- 229910021641 deionized water Inorganic materials 0.000 claims description 6
- 229910052732 germanium Inorganic materials 0.000 claims description 6
- 239000011259 mixed solution Substances 0.000 claims description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 6
- 230000002000 scavenging effect Effects 0.000 claims description 5
- 235000011114 ammonium hydroxide Nutrition 0.000 claims description 3
- 230000007547 defect Effects 0.000 abstract description 11
- 238000010521 absorption reaction Methods 0.000 abstract description 4
- 238000005516 engineering process Methods 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 4
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 4
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 238000011109 contamination Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000005389 semiconductor device fabrication Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
- H01L21/26513—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors of electrically active species
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- High Energy & Nuclear Physics (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
The invention provides a cleaning method after ion implantation. The cleaning method is used for cleaning a semiconductor substrate obtained after ion implantation. The cleaning method comprises the step that an SC-1 solution is used for cleaning the semiconductor substrate so that surface defects, caused by electric charge absorption, on the semiconductor substrate can be removed. Through the cleaning method, the semiconductor substrate can be cleaned after ion implantation, the surface defects of the semiconductor substrate are removed, and the yield of semiconductor devices is increased.
Description
Technical field
The present invention relates to technical field of semiconductors, relate in particular to the cleaning method after Implantation.
Background technology
Implantation is the important process step in semiconductor device fabrication process process, by Implantation, Semiconductor substrate is adulterated, thereby reaches the object that changes Semiconductor substrate performance parameter.Such as Semiconductor substrate is carried out to germanium injection, change the original performance parameter of Semiconductor substrate.And for prior art, a larger problem after germanium injects, cannot after germanium injects, effectively clean Semiconductor substrate exactly, thereby form larger defect in Semiconductor substrate, affect the yield of the semiconductor device of final formation.
Therefore, need a kind of cleaning method, can after Implantation, clean Semiconductor substrate, remove the defect of semiconductor substrate surface, improve the yield of semiconductor device.
Summary of the invention
The problem that the present invention solves is to provide the cleaning method after a kind of Implantation, can after Implantation, clean Semiconductor substrate, removes the defect of semiconductor substrate surface, improves the yield of semiconductor device.
For addressing the above problem, the invention provides the cleaning method after a kind of Implantation, for the Semiconductor substrate after Implantation is cleaned, described cleaning comprises: the step of utilizing SC-1 solution to clean Semiconductor substrate, and to remove in described Semiconductor substrate because electric charge adsorbs the blemish causing.
Alternatively, the mixed solution that described SC-1 solution is ammoniacal liquor, hydrogen peroxide and deionized water.
Alternatively, the time range of utilizing described SC-1 solution to clean described Semiconductor substrate is 1-10 minute.
Alternatively, described scavenging period scope is 3-7 minute.
Alternatively, before carrying out described SC-1 cleaning step, also comprise the step of utilizing SPM solution to clean Semiconductor substrate.
Alternatively, the mixed solution that described SPM solution is sulfuric acid, hydrogen peroxide and deionized water.
Alternatively, the ion of described Implantation is germanium ion.
Compared with prior art, the present invention has the following advantages:
The present invention increases SC-1 solution Semiconductor substrate is cleaned after Implantation, SC-1 solution can effectively be removed semiconductor substrate surface because electric charge adsorbs the blemish causing, semiconductor substrate surface defect is removed, be conducive to the yield of the semiconductor device that improves final formation.
Brief description of the drawings
Fig. 1 is the cleaning method schematic flow sheet of the Semiconductor substrate after the Implantation of one embodiment of the invention.
Embodiment
Can be because electric charge absorption forms particulate in Semiconductor substrate after existing germanium injects, owing to lacking a kind of effectively cleaning, Semiconductor substrate is cleaned to remove described particulate, thereby can in Semiconductor substrate, form defect, these defects not only can directly affect the yield of the semiconductor device of final formation, also can cause the cross pollution between semiconductor technology step, the performance of semiconductor equipment is exerted an influence.
In order to address the above problem, the present invention proposes the cleaning method after a kind of Implantation, for the Semiconductor substrate after Implantation is cleaned, described cleaning comprises: the step of utilizing SC-1 solution to clean Semiconductor substrate, and to remove in described Semiconductor substrate because electric charge adsorbs the blemish causing.
Below in conjunction with specific embodiment, technical scheme of the present invention is described in detail.For the better explanation technical scheme of the present invention of dripping, please refer to the cleaning method schematic flow sheet of the Semiconductor substrate after the Implantation of the prior art shown in Fig. 1.
First, provide Semiconductor substrate to be cleaned, described Semiconductor substrate is through the Semiconductor substrate of ion implantation technology.In the present embodiment, described ion implantation technology is Ge+ implantation.Certainly, cleaning method of the present invention is also applicable to the Semiconductor substrate after kind ion implantation technology, is applicable to cause electric charge absorption and the Semiconductor substrate that forms after the ion implantation technology of particle contamination is cleaned.Such as, described cleaning method goes for the injection of silicon ion.
Then,, with reference to figure 1, execution step S2, utilizes SPM solution to clean Semiconductor substrate.As an embodiment, described SPM solution is the mixed solution of sulfuric acid, hydrogen peroxide and deionized water.Utilize SPM solution can remove organic pollution and the part metals of semiconductor substrate surface, but cannot effectively remove because electric charge adsorbs the particulate causing.
Then, please refer to Fig. 1, execution step S3, utilizes SC-1 solution to clean Semiconductor substrate.Described SC-1 solution is the mixed solution of ammoniacal liquor, hydrogen peroxide and deionized water.Utilize SC-1 solution can effectively remove the particle defects that semiconductor substrate surface causes due to Electrostatic Absorption.For the quality that ensures to clean, the time that described SC-1 solution cleans should not be less than 1 minute.But SC-1 solution soaks substrate for a long time, also can cause semiconductor substrate surface coarse, damage semiconductor substrate surface.Therefore, utilizing described SC-1 solution to clean described Semiconductor substrate should be not long, in the present embodiment, utilizes described SC-1 solution should not exceed 10 minutes to the scavenging period of Semiconductor substrate.As preferred embodiment, the described time range of utilizing described SC-1 solution to clean is 3-7 minute, such as described scavenging period can be 3 minutes, 5 minutes or 7 minutes, specifically can adjust according to technique.Within the scope of above-mentioned scavenging period, can effectively clean Semiconductor substrate, remove its surface because electric charge adsorbs the defect causing.
To sum up, the present invention increases SC-1 solution Semiconductor substrate is cleaned after Implantation, SC-1 solution can effectively be removed semiconductor substrate surface because electric charge adsorbs the blemish causing, semiconductor substrate surface defect is removed, be conducive to the yield of the semiconductor device that improves final formation.
Therefore, above-mentioned preferred embodiment is only explanation technical conceive of the present invention and feature, and its object is to allow person skilled in the art can understand content of the present invention and implement according to this, can not limit the scope of the invention with this.All equivalences that Spirit Essence is done according to the present invention change or modify, within all should being encompassed in protection scope of the present invention.
Claims (7)
1. the cleaning method after an Implantation, for the Semiconductor substrate after Implantation is cleaned, it is characterized in that, described cleaning comprises: the step of utilizing SC-1 solution to clean Semiconductor substrate, and to remove in described Semiconductor substrate because electric charge adsorbs the blemish causing.
2. cleaning method as claimed in claim 1, is characterized in that, described SC-1 solution is the mixed solution of ammoniacal liquor, hydrogen peroxide and deionized water.
3. cleaning method as claimed in claim 1 or 2, is characterized in that, the time range of utilizing described SC-1 solution to clean described Semiconductor substrate is 1-10 minute.
4. cleaning method as claimed in claim 3, is characterized in that, described scavenging period scope is 3-7 minute.
5. cleaning method as claimed in claim 1, is characterized in that, before carrying out described SC-1 cleaning step, also comprises the step of utilizing SPM solution to clean Semiconductor substrate.
6. cleaning method as claimed in claim 5, is characterized in that, described SPM solution is the mixed solution of sulfuric acid, hydrogen peroxide and deionized water.
7. the cleaning method as described in 1 as described in right, the ion of described Implantation is germanium ion.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410163488.XA CN104078327A (en) | 2014-04-22 | 2014-04-22 | Cleaning method after ion implantation |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410163488.XA CN104078327A (en) | 2014-04-22 | 2014-04-22 | Cleaning method after ion implantation |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN104078327A true CN104078327A (en) | 2014-10-01 |
Family
ID=51599518
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410163488.XA Pending CN104078327A (en) | 2014-04-22 | 2014-04-22 | Cleaning method after ion implantation |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN104078327A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105609408A (en) * | 2015-12-23 | 2016-05-25 | 上海华虹宏力半导体制造有限公司 | Forming method of semiconductor device |
| CN111403268A (en) * | 2020-04-27 | 2020-07-10 | 上海华力微电子有限公司 | Cleaning method for reducing loss of grid oxide layer |
-
2014
- 2014-04-22 CN CN201410163488.XA patent/CN104078327A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105609408A (en) * | 2015-12-23 | 2016-05-25 | 上海华虹宏力半导体制造有限公司 | Forming method of semiconductor device |
| CN105609408B (en) * | 2015-12-23 | 2018-11-16 | 上海华虹宏力半导体制造有限公司 | The forming method of semiconductor devices |
| CN111403268A (en) * | 2020-04-27 | 2020-07-10 | 上海华力微电子有限公司 | Cleaning method for reducing loss of grid oxide layer |
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| PB01 | Publication | ||
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| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20141001 |
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| WD01 | Invention patent application deemed withdrawn after publication |