CN112992657A - Wafer cleaning method - Google Patents
Wafer cleaning method Download PDFInfo
- Publication number
- CN112992657A CN112992657A CN202110224921.6A CN202110224921A CN112992657A CN 112992657 A CN112992657 A CN 112992657A CN 202110224921 A CN202110224921 A CN 202110224921A CN 112992657 A CN112992657 A CN 112992657A
- Authority
- CN
- China
- Prior art keywords
- wafer
- cleaning solution
- spin dryer
- parts
- cleaning
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004140 cleaning Methods 0.000 title claims abstract description 187
- 238000000034 method Methods 0.000 title claims abstract description 128
- 239000008367 deionised water Substances 0.000 claims abstract description 40
- 229910021641 deionized water Inorganic materials 0.000 claims abstract description 40
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 40
- 238000001035 drying Methods 0.000 claims abstract description 22
- 238000005202 decontamination Methods 0.000 claims abstract description 14
- 230000003588 decontaminative effect Effects 0.000 claims abstract description 14
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 18
- 239000007788 liquid Substances 0.000 claims description 18
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 16
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 16
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 claims description 16
- UIIMBOGNXHQVGW-UHFFFAOYSA-M Sodium bicarbonate Chemical compound [Na+].OC([O-])=O UIIMBOGNXHQVGW-UHFFFAOYSA-M 0.000 claims description 16
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims description 16
- 238000002242 deionisation method Methods 0.000 claims description 12
- 229910052757 nitrogen Inorganic materials 0.000 claims description 9
- DDFHBQSCUXNBSA-UHFFFAOYSA-N 5-(5-carboxythiophen-2-yl)thiophene-2-carboxylic acid Chemical compound S1C(C(=O)O)=CC=C1C1=CC=C(C(O)=O)S1 DDFHBQSCUXNBSA-UHFFFAOYSA-N 0.000 claims description 8
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 claims description 8
- 239000000908 ammonium hydroxide Substances 0.000 claims description 8
- 229910000030 sodium bicarbonate Inorganic materials 0.000 claims description 8
- 235000017557 sodium bicarbonate Nutrition 0.000 claims description 8
- 229910000029 sodium carbonate Inorganic materials 0.000 claims description 8
- 239000012299 nitrogen atmosphere Substances 0.000 claims description 6
- 230000007547 defect Effects 0.000 abstract description 6
- 239000000126 substance Substances 0.000 abstract description 3
- 235000012431 wafers Nutrition 0.000 description 145
- 239000012535 impurity Substances 0.000 description 4
- 239000004417 polycarbonate Substances 0.000 description 3
- 238000007654 immersion Methods 0.000 description 2
- -1 inorganic matter Substances 0.000 description 2
- 238000000752 ionisation method Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000005416 organic matter Substances 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 230000003749 cleanliness Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02052—Wet cleaning only
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
The invention provides a wafer cleaning method. The method comprises the steps of providing a wafer with a polluted surface, and then placing the wafer in a wafer spin dryer for decontamination treatment, wherein the decontamination treatment process comprises the steps of sequentially carrying out first cleaning solution treatment, second cleaning solution treatment, third cleaning solution treatment, deionized water cleaning treatment and drying treatment on the wafer. According to the wafer cleaning method provided by the application, the wafer spin dryer is used for carrying out cleaning solution treatment on the polluted wafer for multiple times, the surface of the treated wafer is cleaned uniformly, the surface of the wafer has no obvious defect, and substances polluting the environment are not generated in the cleaning process, so that the cleaning method is green and environment-friendly.
Description
Technical Field
The application relates to a wafer cleaning method, and belongs to the field of semiconductor chip cleaning.
Background
With the rapid development of the integrated circuit process, the cleanliness requirement of the wafer in the integrated circuit chip manufacturing process is higher and higher. However, impurities are introduced into the wafer in the processes of photolithography, ion implantation, mechanical grinding, etc., and the performance of the whole computer product is affected after various circuit element structures are processed and manufactured on the wafer. This requires a cleaning process before the wafer is used to reduce the performance of PC products. In the prior art, impurities on the surface of a wafer are generally cleaned in an immersion manner, and the wafer part which is immersed in cleaning liquid firstly is also the part which leaves last in the cleaning process, so that the immersion time of the surface of the wafer is inconsistent, the cleaning degree of the surface of the wafer is uneven, and the performance of a PC (polycarbonate) product manufactured by the wafer is influenced. Therefore, it is an urgent need to provide a wafer cleaning method that can uniformly clean the surface of the wafer and reduce the defects on the surface of the wafer.
Disclosure of Invention
The invention aims to provide a wafer cleaning method to overcome the defects of uneven wafer surface cleaning and serious defects of the wafer surface in the prior art.
In order to achieve the purpose, the technical scheme adopted by the invention comprises the following steps:
the wafer cleaning method is characterized by comprising the following steps:
providing a wafer with a contaminated surface, placing the wafer in a wafer spin dryer for decontamination treatment,
the decontamination treatment process comprises the steps of sequentially carrying out first cleaning solution treatment, second cleaning solution treatment, third cleaning solution treatment, deionized water cleaning treatment and drying treatment on the wafer;
wherein, in the first cleaning liquid treatment process, the rotating speed of the wafer spin dryer is 1000-2000rpm, and the vibration value of the wafer spin dryer is 200-300 um;
in the second cleaning solution treatment process, the rotation speed of the wafer spin dryer is 2000-3000rpm, and the vibration value of the wafer spin dryer is 250-350 um;
in the process of treating the third cleaning solution, the rotating speed of the wafer spin dryer is 1500-2000rpm, and the vibration value of the wafer spin dryer is 200-250 um;
in the deionization treatment process, the rotating speed of the wafer spin dryer is 2000-2500rpm, and the vibration value of the wafer spin dryer is 250-350 um;
the drying treatment process is carried out in a nitrogen atmosphere.
Optionally, the impurities on the contaminated wafer surface are selected from at least one of particles, organic matter, inorganic matter, metal and native oxide.
Optionally, during the processing of the first cleaning solution, the upper limit of the rotation speed of the wafer spin dryer is selected from 1200rpm, 1400rpm, 1600rpm, 1800rpm, 2000 rpm; in the first cleaning solution treatment process, the lower limit of the rotation speed of the wafer spin dryer is selected from 1000rpm, 1200rpm, 1400rpm, 1600rpm and 1800 rpm.
Optionally, in the first cleaning solution treatment process, the upper limit of the vibration value of the wafer spin dryer is selected from 220um, 240um, 260um, 280um and 300 um; in the first cleaning liquid treatment process, the lower limit of the vibration value of the wafer spin dryer is selected from 200um, 220um, 240um, 260um and 280 um.
Optionally, in the second cleaning solution treatment process, the upper limit of the rotation speed of the wafer spin dryer is selected from 2200rpm, 2400rpm, 2600rpm, 2800rpm, and 3000 rpm; in the second cleaning solution treatment process, the lower limit of the rotation speed of the wafer spin dryer is selected from 2000rpm, 2200rpm, 2400rpm, 2600rpm and 2800 rpm.
Optionally, in the second cleaning solution treatment process, the upper limit of the vibration value of the wafer spin dryer is selected from 260um, 270um, 280um, 290um and 300 um; in the second cleaning liquid treatment process, the lower limit of the vibration value of the wafer spin dryer is selected from 250um, 260um, 270um, 280um, 290um and 300 um.
Optionally, during the processing of the third cleaning solution, the upper limit of the rotation speed of the wafer spin dryer is selected from 1600rpm, 1700rpm, 1800rpm, 1900rpm and 2000 rpm; in the third cleaning solution treatment process, the lower limit of the rotation speed of the wafer spin dryer is selected from 1500rpm, 1600rpm, 1700rpm, 1800rpm and 1900 rpm.
Optionally, during the processing of the third cleaning solution, the upper limit of the vibration value of the wafer spin dryer is selected from 210um, 220um, 230um, 240um and 250 um; in the third cleaning solution treatment process, the lower limit of the vibration value of the wafer spin dryer is selected from 200um, 210um, 220um, 230um and 240 um.
Optionally, during the deionization treatment, the upper limit of the rotation speed of the wafer spin dryer is selected from 2100rpm, 2200rpm, 2300rpm, 2400rpm and 2500 rpm; the lower limit of the rotation speed of the wafer spin dryer during the deionization treatment is selected from 2000rpm, 2100rpm, 2200rpm, 2300rpm and 2400 rpm.
Optionally, during the deionization treatment, the upper limit of the vibration value of the wafer spin dryer is selected from 260um, 270um, 280um, 290um, 300um, 310um, 320um, 330um, 340um, 350 um; in the de-ionization process, the lower limit of the vibration value of the wafer spin dryer is selected from 250um, 260um, 270um, 280um, 290um, 300um, 310um, 320um, 330um and 340 um.
Optionally, the wafer has a size of 8imch or less.
Optionally, the wafer has a size of 8 imch.
Optionally, the wafer has a size of 7 imch.
Optionally, the wafer has a size of 6 imch.
Optionally, the wafer has a size of 5 imch.
Optionally, the wafer has a size of 4 imch.
Optionally, the wafer has a size of 3 imch.
Optionally, the wafer has a size of 2 imch.
Optionally, the wafer has a size of 1 imch.
Optionally, the wafer spin dryer includes a deionized water rinse aid system.
Optionally, the wafer spin dryer comprises a nitrogen drying assist system.
Optionally, the first cleaning solution comprises the following components in parts by weight: 1-2 parts of sulfuric acid, 1-3 parts of ammonium hydroxide, 2-6 parts of hydrogen peroxide and 10-14 parts of deionized water.
Optionally, the first cleaning solution comprises the following components in parts by weight: 1 part of sulfuric acid, 1 part of ammonium hydroxide, 2 parts of hydrogen peroxide and 10 parts of deionized water
Optionally, the second cleaning solution comprises 1-2 parts of hydrofluoric acid, 1-3 parts of ammonium fluoride and 1000-2000 parts of deionized water.
Optionally, the second cleaning solution comprises 2 parts of hydrofluoric acid, 3 parts of ammonium fluoride and 2000 parts of deionized water.
Optionally, the components and the content of the components of the third cleaning solution are as follows: 3-5 parts of sodium carbonate, 5-10 parts of sodium bicarbonate and 500-1000 parts of deionized water.
Optionally, the components and the content of the components of the third cleaning solution are as follows: 5 parts of sodium carbonate, 10 parts of sodium bicarbonate and 1000 parts of deionized water.
Optionally, the temperature in the first cleaning solution treatment process is 70-75 ℃, and the time is 10-20 min.
Optionally, the upper temperature limit in the first cleaning liquid treatment process is selected from 71 ℃, 72 ℃, 73 ℃, 74 ℃ and 75 ℃; the lower limit of the temperature in the first cleaning solution treatment process is selected from 70 ℃, 71 ℃, 72 ℃, 73 ℃ and 74 ℃.
Optionally, the time of the first cleaning solution treatment process is 10 min.
Optionally, the time of the first cleaning solution treatment process is 15 min.
Optionally, the time of the first cleaning solution treatment process is 20 min.
Optionally, the upper temperature limit in the second cleaning liquid treatment process is selected from 81 ℃, 82 ℃, 83 ℃, 84 ℃ and 85 ℃; the lower limit of the temperature in the second cleaning solution treatment process is selected from 80 ℃, 81 ℃, 82 ℃, 83 ℃ and 84 ℃.
Optionally, the time of the second cleaning solution treatment process is 10 min.
Optionally, the time of the second cleaning solution treatment process is 15 min.
Optionally, the time of the second cleaning solution treatment process is 20 min.
Optionally, the upper temperature limit during the third cleaning solution treatment is selected from 72 ℃, 74 ℃, 76 ℃, 78 ℃ and 80 ℃; the lower temperature limit in the third cleaning solution treatment process is selected from 70 ℃, 72 ℃, 74 ℃, 76 ℃ and 78 ℃.
Optionally, the treatment time of the third cleaning solution is 10-15 min.
Optionally, the third cleaning solution treatment time is 10 min.
Optionally, the third cleaning solution treatment time is 11 min.
Optionally, the third cleaning solution treatment time is 12 min.
Optionally, the third cleaning solution treatment time is 13 min.
Optionally, the third cleaning solution treatment time is 14 min.
Optionally, the third cleaning solution treatment time is 15 min.
Optionally, the temperature in the deionized water treatment process is 20-25 ℃, and the time is 20-30 min;
optionally, the nitrogen drying treatment time is 10-15 min.
Compared with the prior art, the invention has the advantages that: according to the wafer cleaning method provided by the application, the wafer spin dryer is used for carrying out cleaning solution treatment on the polluted wafer for multiple times, the surface of the treated wafer is cleaned uniformly, the surface of the wafer has no obvious defect, and substances polluting the environment are not generated in the cleaning process, so that the cleaning method is green and environment-friendly.
Detailed Description
In view of the deficiencies in the prior art, the inventors of the present invention have made extensive studies and extensive practices to provide technical solutions of the present invention. The technical solution, its implementation and principles, etc. will be further explained as follows.
The wafer cleaning method is characterized by comprising the following steps:
providing a wafer with a contaminated surface, placing the wafer in a wafer spin dryer for decontamination treatment,
the decontamination treatment process comprises the steps of sequentially carrying out first cleaning solution treatment, second cleaning solution treatment, third cleaning solution treatment, deionized water cleaning treatment and drying treatment on the wafer;
wherein, in the first cleaning liquid treatment process, the rotating speed of the wafer spin dryer is 1000-2000rpm, and the vibration value of the wafer spin dryer is 200-300 um;
in the second cleaning solution treatment process, the rotation speed of the wafer spin dryer is 2000-3000rpm, and the vibration value of the wafer spin dryer is 250-350 um;
in the process of treating the third cleaning solution, the rotating speed of the wafer spin dryer is 1500-2000rpm, and the vibration value of the wafer spin dryer is 200-250 um;
in the deionization treatment process, the rotating speed of the wafer spin dryer is 2000-2500rpm, and the vibration value of the wafer spin dryer is 250-350 um;
the drying treatment process is carried out in a nitrogen atmosphere.
Optionally, the impurities on the contaminated wafer surface are selected from at least one of particles, organic matter, inorganic matter, metal and native oxide.
Optionally, during the processing of the first cleaning solution, the upper limit of the rotation speed of the wafer spin dryer is selected from 1200rpm, 1400rpm, 1600rpm, 1800rpm, 2000 rpm; in the first cleaning solution treatment process, the lower limit of the rotation speed of the wafer spin dryer is selected from 1000rpm, 1200rpm, 1400rpm, 1600rpm and 1800 rpm.
Optionally, in the first cleaning solution treatment process, the rotation speed vibration value of the wafer spin dryer is selected from 220um, 240um, 260um, 280um and 300 um; in the first cleaning liquid treatment process, the lower limit of the vibration value of the wafer spin dryer is selected from 200um, 220um, 240um, 260um and 280 um.
Optionally, in the second cleaning solution treatment process, the upper limit of the rotation speed of the wafer spin dryer is selected from 2200rpm, 2400rpm, 2600rpm, 2800rpm, and 3000 rpm; in the second cleaning solution treatment process, the lower limit of the rotation speed of the wafer spin dryer is selected from 2000rpm, 2200rpm, 2400rpm, 2600rpm and 2800 rpm.
Optionally, in the second cleaning solution treatment process, the upper limit of the vibration value of the wafer spin dryer is selected from 260um, 270um, 280um, 290um and 300 um; in the second cleaning liquid treatment process, the lower limit of the vibration value of the wafer spin dryer is selected from 250um, 260um, 270um, 280um, 290um and 300 um.
Optionally, during the processing of the third cleaning solution, the upper limit of the rotation speed of the wafer spin dryer is selected from 1600rpm, 1700rpm, 1800rpm, 1900rpm and 2000 rpm; in the third cleaning solution treatment process, the lower limit of the rotation speed of the wafer spin dryer is selected from 1500rpm, 1600rpm, 1700rpm, 1800rpm and 1900 rpm.
Optionally, during the processing of the third cleaning solution, the upper limit of the vibration value of the wafer spin dryer is selected from 210um, 220um, 230um, 240um and 250 um; in the third cleaning solution treatment process, the lower limit of the vibration value of the wafer spin dryer is selected from 200um, 210um, 220um, 230um and 240 um.
Optionally, during the deionization treatment, the upper limit of the rotation speed of the wafer spin dryer is selected from 2100rpm, 2200rpm, 2300rpm, 2400rpm and 2500 rpm; the lower limit of the rotation speed of the wafer spin dryer during the deionization treatment is selected from 2000rpm, 2100rpm, 2200rpm, 2300rpm and 2400 rpm.
Optionally, during the deionization treatment, the upper limit of the vibration value of the wafer spin dryer is selected from 260um, 270um, 280um, 290um, 300um, 310um, 320um, 330um, 340um, 350 um; in the de-ionization process, the lower limit of the vibration value of the wafer spin dryer is selected from 250um, 260um, 270um, 280um, 290um, 300um, 310um, 320um, 330um and 340 um.
Optionally, the wafer has a size of 8imch or less.
Optionally, the wafer has a size of 8 imch.
Optionally, the wafer has a size of 7 imch.
Optionally, the wafer has a size of 6 imch.
Optionally, the wafer has a size of 5 imch.
Optionally, the wafer has a size of 4 imch.
Optionally, the wafer has a size of 3 imch.
Optionally, the wafer has a size of 2 imch.
Optionally, the wafer has a size of 1 imch.
Optionally, the wafer spin dryer includes a deionized water rinse aid system.
Optionally, the wafer spin dryer comprises a nitrogen drying assist system.
Optionally, the first cleaning solution comprises the following components in parts by weight: 1-2 parts of sulfuric acid, 1-3 parts of ammonium hydroxide, 2-6 parts of hydrogen peroxide and 10-14 parts of deionized water.
Optionally, the first cleaning solution comprises the following components in parts by weight: 1 part of sulfuric acid, 1 part of ammonium hydroxide, 2 parts of hydrogen peroxide and 10 parts of deionized water
Optionally, the second cleaning solution comprises 1-2 parts of hydrofluoric acid, 1-3 parts of ammonium fluoride and 1000-2000 parts of deionized water.
Optionally, the second cleaning solution comprises 2 parts of hydrofluoric acid, 3 parts of ammonium fluoride and 2000 parts of deionized water.
Optionally, the components and the content of the components of the third cleaning solution are as follows: 3-5 parts of sodium carbonate, 5-10 parts of sodium bicarbonate and 500-1000 parts of deionized water.
Optionally, the components and the content of the components of the third cleaning solution are as follows: 5 parts of sodium carbonate, 10 parts of sodium bicarbonate and 1000 parts of deionized water.
Optionally, the temperature in the first cleaning solution treatment process is 70-75 ℃, and the time is 10-20 min.
Optionally, the upper temperature limit in the first cleaning liquid treatment process is selected from 71 ℃, 72 ℃, 73 ℃, 74 ℃ and 75 ℃; the lower limit of the temperature in the first cleaning solution treatment process is selected from 70 ℃, 71 ℃, 72 ℃, 73 ℃ and 74 ℃.
Optionally, the time of the first cleaning solution treatment process is 10 min.
Optionally, the time of the first cleaning solution treatment process is 15 min.
Optionally, the time of the first cleaning solution treatment process is 20 min.
Optionally, the upper temperature limit in the second cleaning liquid treatment process is selected from 81 ℃, 82 ℃, 83 ℃, 84 ℃ and 85 ℃; the lower limit of the temperature in the second cleaning solution treatment process is selected from 80 ℃, 81 ℃, 82 ℃, 83 ℃ and 84 ℃.
Optionally, the time of the second cleaning solution treatment process is 10 min.
Optionally, the time of the second cleaning solution treatment process is 15 min.
Optionally, the time of the second cleaning solution treatment process is 20 min.
Optionally, the upper temperature limit during the third cleaning solution treatment is selected from 72 ℃, 74 ℃, 76 ℃, 78 ℃ and 80 ℃; the lower temperature limit in the third cleaning solution treatment process is selected from 70 ℃, 72 ℃, 74 ℃, 76 ℃ and 78 ℃.
Optionally, the treatment time of the third cleaning solution is 10-15 min.
Optionally, the third cleaning solution treatment time is 10 min.
Optionally, the third cleaning solution treatment time is 11 min.
Optionally, the third cleaning solution treatment time is 12 min.
Optionally, the third cleaning solution treatment time is 13 min.
Optionally, the third cleaning solution treatment time is 14 min.
Optionally, the third cleaning solution treatment time is 15 min.
Optionally, the temperature in the deionized water treatment process is 20-25 ℃, and the time is 20-30 min;
optionally, the nitrogen drying treatment time is 10-15 min.
The technical solution of the present invention is further explained below with reference to several examples.
The substances in the examples of the present application are all commercially available.
Example 1
Providing a wafer with a contaminated surface, placing the wafer in a wafer spin dryer for decontamination treatment,
the decontamination treatment process comprises the steps of sequentially carrying out first cleaning solution treatment, second cleaning solution treatment, third cleaning solution treatment, deionized water cleaning treatment and drying treatment on the wafer;
in the first cleaning liquid treatment process, the rotating speed of the wafer spin dryer is 1000rpm, and the vibration value of the wafer spin dryer is 200 um;
in the second cleaning solution treatment process, the rotating speed of the wafer spin dryer is 2000rpm, and the vibration value of the wafer spin dryer is 250 um;
in the third cleaning solution treatment process, the rotating speed of the wafer spin dryer is 1500rpm, and the vibration value of the wafer spin dryer is 200 um;
in the deionization treatment process, the rotating speed of the wafer spin dryer is 2000rpm, and the vibration value of the wafer spin dryer is 250 um;
the drying treatment process is carried out in a nitrogen atmosphere.
The first cleaning solution comprises the following components in percentage by weight: 1 part of sulfuric acid, 1 part of ammonium hydroxide, 2 parts of hydrogen peroxide and 10 parts of deionized water
The second cleaning liquid comprises 2 parts of hydrofluoric acid, 3 parts of ammonium fluoride and 2000 parts of deionized water.
The third cleaning solution comprises the following components in percentage by weight: 5 parts of sodium carbonate, 10 parts of sodium bicarbonate and 1000 parts of deionized water.
The temperature in the first cleaning solution treatment process is 70 ℃, and the time is 10 min.
The upper limit of the temperature in the second cleaning liquid treatment process is selected from 81 DEG C
The time of the second cleaning solution treatment process is 10 min.
The upper temperature limit of the third cleaning solution in the treatment process is selected from 72 DEG C
The treatment time of the third cleaning solution is 10 min.
The temperature in the deionized water treatment process is 20-25 ℃, and the time is 20 min;
optionally, the nitrogen drying treatment time is 10 min.
Example 2
Providing a wafer with a contaminated surface, placing the wafer in a wafer spin dryer for decontamination treatment,
the decontamination treatment process comprises the steps of sequentially carrying out first cleaning solution treatment, second cleaning solution treatment, third cleaning solution treatment, deionized water cleaning treatment and drying treatment on the wafer;
in the first cleaning liquid treatment process, the rotating speed of a wafer spin dryer is 1500rpm, and the vibration value of the wafer spin dryer is 250 um;
in the second cleaning solution treatment process, the rotating speed of the wafer spin dryer is 2500rpm, and the vibration value of the wafer spin dryer is 280 um;
in the third cleaning solution treatment process, the rotating speed of the wafer spin dryer is 1800rpm, and the vibration value of the wafer spin dryer is 230 um;
in the deionization treatment process, the rotating speed of the wafer spin dryer is 2300rpm, and the vibration value of the wafer spin dryer is 300 um;
the drying treatment process is carried out in a nitrogen atmosphere.
Optionally, the first cleaning solution comprises the following components in parts by weight: 2 parts of sulfuric acid, 1 part of ammonium hydroxide, 3 parts of hydrogen peroxide and 10 parts of deionized water
Optionally, the second cleaning solution comprises 2 parts of hydrofluoric acid, 3 parts of ammonium fluoride and 1500 parts of deionized water.
Optionally, the components and the content of the components of the third cleaning solution are as follows: 5 parts of sodium carbonate, 5 parts of sodium bicarbonate and 800 parts of deionized water.
The temperature of the first cleaning solution in the treatment process is 72 ℃, 73 ℃, 74 ℃ and 75 DEG C
The time of the first cleaning liquid treatment process is 15 min.
The upper limit of the temperature in the second cleaning solution treatment process is selected from 82 DEG C
The time of the second cleaning solution treatment process is 15 min.
The temperature during the treatment of the third cleaning solution was 74 ℃.
Optionally, the third cleaning solution treatment time is 12 min.
Optionally, the temperature in the deionized water treatment process is 25 ℃, and the time is 25 min;
optionally, the nitrogen drying treatment time is 10 min.
Example 3
Providing a wafer with a contaminated surface, placing the wafer in a wafer spin dryer for decontamination treatment,
the decontamination treatment process comprises the steps of sequentially carrying out first cleaning solution treatment, second cleaning solution treatment, third cleaning solution treatment, deionized water cleaning treatment and drying treatment on the wafer;
in the first cleaning solution treatment process, the rotating speed of the wafer spin dryer is 2000rpm, and the vibration value of the wafer spin dryer is 300 um;
in the second cleaning solution treatment process, the rotating speed of the wafer spin dryer is 3000rpm, and the vibration value of the wafer spin dryer is 350 um;
in the process of processing the third cleaning solution, the rotating speed of the wafer spin dryer is 2000rpm, and the vibration value of the wafer spin dryer is 250 um;
in the deionization treatment process, the rotating speed of the wafer spin dryer is 2500rpm, and the vibration value of the wafer spin dryer is 350 um;
the drying treatment process is carried out in a nitrogen atmosphere.
The first cleaning solution comprises the following components in percentage by weight: 1 part of sulfuric acid, 1 part of ammonium hydroxide, 2 parts of hydrogen peroxide and 14 parts of deionized water
The second cleaning solution comprises 1 part of hydrofluoric acid, 3 parts of ammonium fluoride and 2000 parts of deionized water.
The third cleaning solution comprises the following components in percentage by weight: 5 parts of sodium carbonate, 8 parts of sodium bicarbonate and 900 parts of deionized water.
The temperature in the first cleaning solution treatment process is 75 ℃.
The time of the first cleaning liquid treatment process is 20 min.
The temperature in the second cleaning solution treatment process is 85 ℃.
The time of the second cleaning solution treatment process is 20 min.
The temperature in the third cleaning solution treatment process is 80 ℃.
The treatment time of the third cleaning solution is 15 min.
The temperature in the deionized water treatment process is 25 ℃, and the time is 30 min;
the nitrogen drying treatment time is 15 min.
Example 4
The wafers cleaned in the embodiments 1 to 3 are detected, and the detection results show that the cleaning solution treatment is performed on the contaminated wafer for multiple times by using the wafer cleaning method provided by the application, the surface of the treated wafer is cleaned uniformly, and the surface of the wafer has no obvious defects.
It should be understood that the above-mentioned embodiments are merely illustrative of the technical concepts and features of the present invention, which are intended to enable those skilled in the art to understand the contents of the present invention and implement the present invention, and therefore, the protection scope of the present invention is not limited thereby. All equivalent changes and modifications made according to the spirit of the present invention should be covered within the protection scope of the present invention.
Claims (10)
1. A wafer cleaning method is characterized by comprising the following steps:
providing a wafer with a contaminated surface, placing the wafer in a wafer spin dryer for decontamination treatment,
the decontamination treatment process comprises the steps of sequentially carrying out first cleaning solution treatment, second cleaning solution treatment, third cleaning solution treatment, deionized water cleaning treatment and drying treatment on the wafer;
wherein, in the first cleaning liquid treatment process, the rotating speed of the wafer spin dryer is 1000-2000rpm, and the vibration value of the wafer spin dryer is 200-300 um;
in the second cleaning solution treatment process, the rotation speed of the wafer spin dryer is 2000-3000rpm, and the vibration value of the wafer spin dryer is 250-350 um;
in the process of treating the third cleaning solution, the rotating speed of the wafer spin dryer is 1500-2000rpm, and the vibration value of the wafer spin dryer is 200-250 um;
in the deionization treatment process, the rotating speed of the wafer spin dryer is 2000-2500rpm, and the vibration value of the wafer spin dryer is 250-350 um;
the drying treatment process is carried out in a nitrogen atmosphere.
2. The method as claimed in claim 1, wherein the wafer has a size of 8imch or less.
3. The method of claim 1, wherein the spin dryer comprises an auxiliary system for deionized water cleaning;
preferably, the wafer spin dryer comprises a nitrogen drying auxiliary system.
4. The wafer cleaning method according to claim 1, wherein the first cleaning solution comprises the following components in percentage by weight: 1-2 parts of sulfuric acid, 1-3 parts of ammonium hydroxide, 2-6 parts of hydrogen peroxide and 10-14 parts of deionized water.
5. The wafer cleaning method as claimed in claim 1, wherein the second cleaning solution comprises hydrofluoric acid 1-2 parts, ammonium fluoride 1-3 parts, and deionized water 1000-2000 parts.
6. The wafer cleaning method according to claim 1, wherein the third cleaning solution comprises the following components in percentage by weight: 3-5 parts of sodium carbonate, 5-10 parts of sodium bicarbonate and 1000 parts of deionized water;
7. the wafer cleaning method as claimed in claim 1, wherein the temperature of the first cleaning solution is 70-75 ℃ for 10-20 min.
8. The wafer cleaning method as claimed in claim 1, wherein the temperature of the second cleaning solution is 80-85 ℃ for 10-20 min.
9. The wafer cleaning method according to claim 1, wherein the temperature of the third cleaning solution during the treatment is 70-80 ℃ for 10-15 min.
10. The wafer cleaning method according to claim 1, wherein the temperature of the deionized water treatment process is 20-25 ℃ and the time is 20-30 min;
preferably, the nitrogen drying treatment time is 10-15 min.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110224921.6A CN112992657A (en) | 2021-03-01 | 2021-03-01 | Wafer cleaning method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110224921.6A CN112992657A (en) | 2021-03-01 | 2021-03-01 | Wafer cleaning method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN112992657A true CN112992657A (en) | 2021-06-18 |
Family
ID=76351533
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202110224921.6A Pending CN112992657A (en) | 2021-03-01 | 2021-03-01 | Wafer cleaning method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN112992657A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2023035546A1 (en) * | 2021-09-13 | 2023-03-16 | 广州粤芯半导体技术有限公司 | Wafer cleaning method and method for manufacturing semiconductor device |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2000034998A1 (en) * | 1998-12-07 | 2000-06-15 | Scp Global Technologies, A Division Of Preco, Inc. | Process and system for rinsing of semiconductor substrates |
| CN1528011A (en) * | 2000-10-05 | 2004-09-08 | ��ķ�о�����˾ | Wafer cleaning module and method for cleaning the surface of a substrate |
| CN1787178A (en) * | 2004-12-08 | 2006-06-14 | 中国电子科技集团公司第四十六研究所 | Method for cleaning gallium arsenide crystal chip |
| CN102810459A (en) * | 2011-06-03 | 2012-12-05 | 中国科学院微电子研究所 | Method for cleaning wafer after chemical-mechanical |
| CN107359109A (en) * | 2017-07-27 | 2017-11-17 | 成都海威华芯科技有限公司 | A kind of semiconductor crystal wafer cleaning method |
| CN109727841A (en) * | 2017-10-27 | 2019-05-07 | 东莞新科技术研究开发有限公司 | The cleaning method of wafer |
| CN209820039U (en) * | 2019-03-26 | 2019-12-20 | 昆山基侑电子科技有限公司 | Wafer drying groove |
| CN111199869A (en) * | 2018-11-19 | 2020-05-26 | 长鑫存储技术有限公司 | Wafer cleaning method |
-
2021
- 2021-03-01 CN CN202110224921.6A patent/CN112992657A/en active Pending
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2000034998A1 (en) * | 1998-12-07 | 2000-06-15 | Scp Global Technologies, A Division Of Preco, Inc. | Process and system for rinsing of semiconductor substrates |
| CN1528011A (en) * | 2000-10-05 | 2004-09-08 | ��ķ�о�����˾ | Wafer cleaning module and method for cleaning the surface of a substrate |
| CN1787178A (en) * | 2004-12-08 | 2006-06-14 | 中国电子科技集团公司第四十六研究所 | Method for cleaning gallium arsenide crystal chip |
| CN102810459A (en) * | 2011-06-03 | 2012-12-05 | 中国科学院微电子研究所 | Method for cleaning wafer after chemical-mechanical |
| CN107359109A (en) * | 2017-07-27 | 2017-11-17 | 成都海威华芯科技有限公司 | A kind of semiconductor crystal wafer cleaning method |
| CN109727841A (en) * | 2017-10-27 | 2019-05-07 | 东莞新科技术研究开发有限公司 | The cleaning method of wafer |
| CN111199869A (en) * | 2018-11-19 | 2020-05-26 | 长鑫存储技术有限公司 | Wafer cleaning method |
| CN209820039U (en) * | 2019-03-26 | 2019-12-20 | 昆山基侑电子科技有限公司 | Wafer drying groove |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2023035546A1 (en) * | 2021-09-13 | 2023-03-16 | 广州粤芯半导体技术有限公司 | Wafer cleaning method and method for manufacturing semiconductor device |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPH08264500A (en) | Cleaning of substrate | |
| CN111508824A (en) | Texturing cleaning method and heterojunction battery | |
| CN110416066B (en) | Cleaning method and cleaning apparatus | |
| WO2020075448A1 (en) | Semiconductor silicon wafer cleaning treatment apparatus and cleaning method | |
| CN112992657A (en) | Wafer cleaning method | |
| KR101919122B1 (en) | Apparatus and method treating substrate for seperation process | |
| JP4933071B2 (en) | Cleaning method of silicon wafer | |
| CN105428211A (en) | Method for removing pad defect | |
| US20120172273A1 (en) | Wafer washing water and wafer washing method | |
| CN1673862A (en) | Etching composition and method for etching a substrate | |
| US6245158B1 (en) | Wet processing methods for the manufacture of electronic components using liquids of varying temperature | |
| KR100732775B1 (en) | Cleaning bath for regenerating a dummy wafer and method of cleaning the dummy wafer using the same | |
| JP4357456B2 (en) | Semiconductor substrate cleaning method | |
| JP2001526460A (en) | Wet processing method for manufacturing electronic components | |
| KR100228372B1 (en) | Wafer cleaning apparatus | |
| JPH1022245A (en) | Method and apparatus for removing foreign matter from semiconductor device | |
| JP2003297792A (en) | Method for cleaning substrate, cleaner and dryer, and method for manufacturing semiconductor device | |
| JP2015126067A (en) | Method for cleaning semiconductor wafer | |
| CN1254440A (en) | Method for etching silicon wafer | |
| EP3573090B1 (en) | Semiconductor wafer cleaning method | |
| JPH10199847A (en) | Method of cleaning wafer | |
| CN117153668A (en) | Cleaning process of gallium antimonide wafer | |
| JP3489329B2 (en) | Silicon wafer surface treatment method | |
| KR101001307B1 (en) | Method for Cleaning Wafer | |
| CN112635295A (en) | Cleaning method of semiconductor |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |