CN105428211A - Method for removing pad defect - Google Patents
Method for removing pad defect Download PDFInfo
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- CN105428211A CN105428211A CN201510762520.0A CN201510762520A CN105428211A CN 105428211 A CN105428211 A CN 105428211A CN 201510762520 A CN201510762520 A CN 201510762520A CN 105428211 A CN105428211 A CN 105428211A
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- Prior art keywords
- pad
- defect
- hydrofluoric acid
- dsp
- substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P80/00—Climate change mitigation technologies for sector-wide applications
- Y02P80/30—Reducing waste in manufacturing processes; Calculations of released waste quantities
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
The present invention relates to the technical field of semiconductor manufacturing and particularly relates to a method for removing a pad defect. After a DSP solution without hydrofluoric acid is used to clean a pad, the pad is subjected to washing process, the cleaning and washing processes are repeated for many times to remove the pad defect, since the DSP solution does not contain the hydrofluoric acid, the pad damage in the process of removing the pad defect can be reduced, and pit defects are reduced. Since the DSP high and low speed matching is used, the streaming can be increased to increase chemical cleaning ability, the mode of repeated cleaning and washing is employed, the effect of the sulfuric acid and hydrogen peroxide in the solution can be improved, thus the pad defect can be effectively removed, scrap can be reduced, the yield is improved, and the cost os rework is saved.
Description
Technical field
The present invention relates to technical field of manufacturing semiconductors, particularly relate to a kind of method removing pad defect.
Background technology
In semiconductor fabrication process, pad crystal defect (PadCrystaldefect) is a kind of common defective workmanship, this defect can be judged as abnormal appearance in IC chip shipment visual inspection process, just has the risk of scrapping if can not do over again to remove.
Pad defect is presented as the projection of pad in OM (visual inspection) situation, is presented as an excrescent product of Al under SEM (under electron microscope).
The mode of removal (rework) the pad defect of doing over again of current routine has two kinds: the first first covers photoresistance in non-PAD region; Next carries out surperficial high-energy ion bombardment; Then removing photoresistance, carrying out surface goes fluorine to clean and surface passivating treatment, the method can effectively remove pad defect, but the drawback of the method removes complex process, cost (cost) is high, and dry etching (dryetch) board parts (parts) also may be caused to damage (damage).The second adopts DSP solution (HFDSP) (HF+H2SO4+H2O2) of hydrofluoric acid containing to carry out rotating speed processing procedure (Spinprocess) to dissolve, rinse defect, the drawback of the method is that removal defect is limited in one's ability, if time lengthening can cause Pad damaged metal too many, even can damage (damage) to pad itself, these are all that those skilled in the art institute is less desirable.
Summary of the invention
For above-mentioned Problems existing, the invention discloses a kind of method removing pad defect, comprising:
Step S1, provides the substrate that is formed with pad, and described pad is formed with crystal defect;
Step S2, after utilizing the DSP solution not containing hydrofluoric acid (HF) to clean described substrate, carries out developing technique to described substrate;
Step S3, repeats described step S2 many times, to remove described crystal defect.
The method of above-mentioned removal pad defect, wherein, described not containing H2O:H2SO4:H2O2=50:3:7 in the DSP solution of hydrofluoric acid.
The method of above-mentioned removal pad defect, wherein, in described step S2, the time utilizing the DSP solution not containing hydrofluoric acid to clean described substrate is 25 ~ 35s.
The method of above-mentioned removal pad defect, wherein, in described step S2, the method for DSP high and low rotating speed collocation (multichuckspeed) is adopted to utilize the DSP solution not containing hydrofluoric acid to clean described substrate, wherein, the rotating speed of this high and low rotating speed collocation is 500 ~ 1000rpm/min.
The method of above-mentioned removal pad defect, wherein, in described step S2, utilizes deionized water to carry out developing technique to described substrate.
The method of above-mentioned removal pad defect, wherein, in described step S2, utilizes carbon dioxide and deionized water to carry out developing technique to described substrate.
The method of above-mentioned removal pad defect, wherein, in described step S3, repeats described step S23 ~ 5 time to remove the crystal defect of described pad.
The method of above-mentioned removal pad defect, wherein, described pad is aluminium (Al) pad.
The method of above-mentioned removal pad defect, wherein, described crystal defect is the compound of fluorine-containing (F), oxygen (O) and aluminium (Al) element.
The method of above-mentioned removal pad defect, wherein, described method also comprises:
Step S4, carries out drying process to described substrate.
Foregoing invention tool has the following advantages or beneficial effect:
The invention discloses a kind of method removing pad defect, after utilizing the cleaning of the DSP solution not containing hydrofluoric acid pad, developing technique is carried out to this pad, and circulation repeatedly carries out this cleaning and developing technique to remove pad defect, owing to not containing hydrofluoric acid in DSP solution, thus the pad damage of removing in pad defect process can be reduced, reduce concave point (pits) defect; And stream to increase chemistry (chemical) cleansing power owing to adopting the collocation of DSP high and low rotating speed to increase, the mode of adopt repeatedly circulate (multicycle) to clean, rinsing can improve the effect of sulfuric acid and hydrogen peroxide in DSP solution, thus can effectively remove pad defect; And then can reduce and scrap, promote yield, save rework cost.
Accompanying drawing explanation
By reading the detailed description done non-limiting example with reference to the following drawings, the present invention and feature, profile and advantage will become more apparent.Mark identical in whole accompanying drawing indicates identical part.Proportionally can not draw accompanying drawing, focus on purport of the present invention is shown.
Fig. 1 is the flow chart of the method removing pad defect in the embodiment of the present invention.
Embodiment
Below in conjunction with accompanying drawing and specific embodiment, the present invention is further illustrated, but not as limiting to the invention.
As shown in Figure 1, the present embodiment relates to a kind of method removing pad defect, comprising:
Step one, provides the substrate that is formed with pad, and this pad is formed with crystal defect; The technology having the substrate of pad due to this can adopt technology well-known to those skilled in the art, and just it will not go into details at this for its concrete preparation technology.
In a preferred embodiment of the invention, this pad is aluminum pad, and accordingly, this crystal defect is the compound of fluorine-containing (F), oxygen (O) and aluminium (Al) element.The mechanism that this crystal defect is formed is: aluminum pad and oxide thereof are deposited reaction in case at fluorine ion and steam and generated aluminium hydroxide, react with H+F-more afterwards generate that this is fluorine-containing, the compound of oxygen and aluminium.
Step 2, after utilizing the DSP solution (mixed solution of sulfuric acid and hydrogen peroxide) not containing hydrofluoric acid (HF) to clean substrate, continues to carry out developing technique to this substrate.
The DSP solution cleaning substrate not containing hydrofluoric acid (HF) why is adopted in the present embodiment, that the effect of sulfuric acid and HF is dissolved because hydrogen peroxide effect in existing DSP solution (water: sulfuric acid: hydrogen peroxide: HF=50:3:7:85ppm) is the defect of oxypolymer (polymer) character; But the DSP solution scavenging period containing HF is too short, crystal defect can not be removed completely, scavenging period is oversize, pad metal can be caused again to damage too many, and can negative effect be brought, such as destroy pad surface etc. (such as pad metal is too many, may produce pit defects (pitsdefect)).Therefore in order to avoid the problems referred to above, the DSP solution cleaning substrate not containing hydrofluoric acid (HF) in the present embodiment, is adopted.
In the present invention's preferred embodiment, above-mentioned not containing H2O:H2SO4:H2O2=50:3:7 in the DSP solution of hydrofluoric acid.
In the present invention's preferred embodiment, the time utilizing the DSP solution cleaning substrate not containing hydrofluoric acid is 25 ~ 35s (such as 25s, 28s, 30s or 35s etc.).
In the present invention's preferred embodiment, the method of DSP high and low rotating speed collocation (multichuckspeed) is adopted to utilize the DSP solution not containing hydrofluoric acid to clean described substrate, chemistry (chemical) cleansing power is increased to be streamed by increase, wherein, the rotating speed of this high and low rotating speed collocation is 500 ~ 1000rpm/min.
In the present invention's preferred embodiment, utilize deionized water to carry out developing technique to this substrate, carbon dioxide and deionized water also can be utilized to carry out developing technique to this substrate; As long as object of the present invention can be realized.
Step 3, repeats described step 2 repeatedly, to remove above-mentioned crystal defect.
In the present invention's preferred embodiment, repeat above-mentioned steps 23 ~ 5 times to remove the crystal defect of pad, further, repeat above-mentioned steps 24 times to remove the crystal defect of pad to reach preferably removal effect.
In the present invention's preferred embodiment, said method also comprises:
Step 4, continues to carry out idle running technique (spinoff) and drying process to above-mentioned substrate; Wherein, the object of this idle running technique removes remaining of surface chemistries).
To sum up, the invention discloses a kind of method removing pad defect, after utilizing the cleaning of the DSP solution not containing hydrofluoric acid pad, developing technique is carried out to this pad, and circulation repeatedly carries out this cleaning and developing technique to remove pad defect, owing to not containing hydrofluoric acid in DSP solution, thus the pad damage of removing in pad defect process can be reduced, reduce pit defects; And stream to increase chemical cleaning ability owing to adopting the collocation of DSP high and low rotating speed to increase, adopt repeatedly wash cycles, effect that the mode of flushing can improve sulfuric acid and hydrogen peroxide in DSP solution, thus can effectively remove pad defect; And then can reduce and scrap, promote yield, save rework cost.
It should be appreciated by those skilled in the art that those skilled in the art are realizing change case in conjunction with prior art and above-described embodiment, do not repeat at this.Such change case does not affect flesh and blood of the present invention, does not repeat them here.
Above preferred embodiment of the present invention is described.It is to be appreciated that the present invention is not limited to above-mentioned particular implementation, the equipment wherein do not described in detail to the greatest extent and structure are construed as to be implemented with the common mode in this area; Any those of ordinary skill in the art, do not departing under technical solution of the present invention ambit, the Method and Technology content of above-mentioned announcement all can be utilized to make many possible variations and modification to technical solution of the present invention, or being revised as the Equivalent embodiments of equivalent variations, this does not affect flesh and blood of the present invention.Therefore, every content not departing from technical solution of the present invention, according to technical spirit of the present invention to any simple modification made for any of the above embodiments, equivalent variations and modification, all still belongs in the scope of technical solution of the present invention protection.
Claims (10)
1. remove a method for pad defect, it is characterized in that, comprising:
Step S1, provides the substrate that is formed with pad, and described pad is formed with crystal defect;
Step S2, after utilizing the DSP solution not containing hydrofluoric acid to clean described substrate, carries out developing technique to described substrate;
Step S3, repeats described step S2 many times, to remove described crystal defect.
2. the method removing pad defect as claimed in claim 1, is characterized in that, described not containing H2O:H2SO4:H2O2=50:3:7 in the DSP solution of hydrofluoric acid.
3. the method removing pad defect as claimed in claim 1, is characterized in that, in described step S2, the time utilizing the DSP solution not containing hydrofluoric acid to clean described substrate is 25 ~ 35s.
4. the method removing pad defect as claimed in claim 1, is characterized in that, in described step S2, adopts the method for DSP high and low rotating speed collocation to utilize the DSP solution not containing hydrofluoric acid to clean described substrate.
5. the method removing pad defect as claimed in claim 1, is characterized in that, in described step S2, utilize deionized water to carry out developing technique to described substrate.
6. the method removing pad defect as claimed in claim 1, is characterized in that, in described step S2, utilize carbon dioxide and deionized water to carry out developing technique to described substrate.
7. the as claimed in claim 1 method removing pad defect, is characterized in that, in described step S3, repeats described step S23 ~ 5 time to remove the crystal defect of described pad.
8. the method removing pad defect as claimed in claim 1, it is characterized in that, described pad is aluminum pad.
9. the as claimed in claim 8 method removing pad defect, is characterized in that, described crystal defect is the compound of fluorine-containing, oxygen and aluminium element.
10. the method removing pad defect as claimed in claim 1, it is characterized in that, described method also comprises:
Step S4, carries out drying process to described substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510762520.0A CN105428211A (en) | 2015-11-10 | 2015-11-10 | Method for removing pad defect |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510762520.0A CN105428211A (en) | 2015-11-10 | 2015-11-10 | Method for removing pad defect |
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| Publication Number | Publication Date |
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| CN105428211A true CN105428211A (en) | 2016-03-23 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201510762520.0A Pending CN105428211A (en) | 2015-11-10 | 2015-11-10 | Method for removing pad defect |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110600388A (en) * | 2019-09-30 | 2019-12-20 | 上海华力集成电路制造有限公司 | Method for improving crystallization defect of aluminum bonding pad |
| CN111229685A (en) * | 2020-01-08 | 2020-06-05 | 长江存储科技有限责任公司 | Method for removing crystal defects of aluminum bonding pad of integrated circuit |
| CN111681949A (en) * | 2020-06-22 | 2020-09-18 | 长江存储科技有限责任公司 | Method for processing back of wafer |
| CN112103179A (en) * | 2020-11-03 | 2020-12-18 | 晶芯成(北京)科技有限公司 | Manufacturing method of MIM capacitor |
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| US5175124A (en) * | 1991-03-25 | 1992-12-29 | Motorola, Inc. | Process for fabricating a semiconductor device using re-ionized rinse water |
| CN101154603A (en) * | 2006-09-30 | 2008-04-02 | 中芯国际集成电路制造(上海)有限公司 | Method for forming solder pad of semiconductor device |
| CN101928947A (en) * | 2009-06-26 | 2010-12-29 | 中芯国际集成电路制造(上海)有限公司 | Cleaning reagent and manufacturing process of aluminum pad |
| CN102403192A (en) * | 2010-09-17 | 2012-04-04 | 中芯国际集成电路制造(上海)有限公司 | Cleaning method for substrates |
| CN104992898A (en) * | 2015-05-28 | 2015-10-21 | 北京七星华创电子股份有限公司 | Method for improving DHF corrosion uniformity and controlling corrosion rate |
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2015
- 2015-11-10 CN CN201510762520.0A patent/CN105428211A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
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| US5175124A (en) * | 1991-03-25 | 1992-12-29 | Motorola, Inc. | Process for fabricating a semiconductor device using re-ionized rinse water |
| CN101154603A (en) * | 2006-09-30 | 2008-04-02 | 中芯国际集成电路制造(上海)有限公司 | Method for forming solder pad of semiconductor device |
| CN101928947A (en) * | 2009-06-26 | 2010-12-29 | 中芯国际集成电路制造(上海)有限公司 | Cleaning reagent and manufacturing process of aluminum pad |
| CN102403192A (en) * | 2010-09-17 | 2012-04-04 | 中芯国际集成电路制造(上海)有限公司 | Cleaning method for substrates |
| CN104992898A (en) * | 2015-05-28 | 2015-10-21 | 北京七星华创电子股份有限公司 | Method for improving DHF corrosion uniformity and controlling corrosion rate |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110600388A (en) * | 2019-09-30 | 2019-12-20 | 上海华力集成电路制造有限公司 | Method for improving crystallization defect of aluminum bonding pad |
| CN111229685A (en) * | 2020-01-08 | 2020-06-05 | 长江存储科技有限责任公司 | Method for removing crystal defects of aluminum bonding pad of integrated circuit |
| CN111229685B (en) * | 2020-01-08 | 2021-06-01 | 长江存储科技有限责任公司 | Method for removing crystal defects of aluminum bonding pad of integrated circuit |
| CN111681949A (en) * | 2020-06-22 | 2020-09-18 | 长江存储科技有限责任公司 | Method for processing back of wafer |
| CN111681949B (en) * | 2020-06-22 | 2021-05-18 | 长江存储科技有限责任公司 | Method for processing back of wafer |
| CN112103179A (en) * | 2020-11-03 | 2020-12-18 | 晶芯成(北京)科技有限公司 | Manufacturing method of MIM capacitor |
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Application publication date: 20160323 |
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