TWI580486B - Treatment of contaminants in workpieces with yttrium oxide coating - Google Patents
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本發明涉及半導體製造領域,尤其涉及一種用於等離子體刻蝕的具有氧化釔包覆層的工件的污染物的處理方法。 The present invention relates to the field of semiconductor fabrication, and more particularly to a method for treating contaminants of a workpiece having a yttria coating for plasma etching.
近年來,在半導體製造領域,很多制程中涉及等離子刻蝕,例如TSV(Through Silicon Via)的形成中涉及矽的等離子體刻蝕,金屬互連線的形成過程中涉及金屬的等離子體刻蝕,電晶體中柵極的形成涉及介電層的刻蝕。上述制程一般是在等離子腔室內進行的,該腔室內設置有多種工件,例如聚焦環、噴淋頭等。 In recent years, in the field of semiconductor manufacturing, plasma etching is involved in many processes, such as the formation of TSV (Through Silicon Via), which involves plasma etching of germanium, and the formation of metal interconnects involves metal plasma etching. The formation of the gate in the transistor involves etching of the dielectric layer. The above process is generally carried out in a plasma chamber in which a plurality of workpieces, such as a focus ring, a shower head, etc., are disposed.
以噴淋頭為例,現有的噴淋頭其基體一般為鋁,但是鋁容易在等離子環境下被腐蝕,導致該噴淋頭的壽命不長。針對這個問題,現有技術中通過在該基體的外表面覆蓋一層抗刻蝕能力比鋁強的氧化鋁(Al2O3),然而,由於噴淋頭在使用時其表面會與刻蝕氣體,一般為含氟氣體,發生反應,生成氟化鋁顆粒,該顆粒聚集起來,容易掉落在待刻蝕晶片上,導致污染,因而氧化鋁並不是噴淋頭覆蓋層的優選材質,行業內逐漸被無污染物產生且散熱性能佳的矽(熱傳導率:149Wm-1K-1)或碳化矽(熱傳導率:150Wm-1K-1)覆蓋層所取代。然而,矽與或碳化矽容易與刻蝕氣體發生反應,導致噴淋頭使用壽命縮短,針對上述問題,又出現了抗刻蝕性能更好的氧化釔覆蓋的噴淋頭。 Taking the shower head as an example, the existing sprinkler head is generally made of aluminum, but the aluminum is easily corroded in a plasma environment, resulting in a short life of the sprinkler. In view of this problem, in the prior art, the outer surface of the substrate is covered with a layer of aluminum oxide (Al 2 O 3 ) which is more resistant to etching than aluminum. However, since the surface of the shower head is etched with gas during use, it is generally included. Fluorine gas reacts to form aluminum fluoride particles, which are aggregated and easily fall on the wafer to be etched, resulting in contamination. Therefore, alumina is not the preferred material for the showerhead cover layer, and the industry is gradually becoming pollution-free. It is replaced by a layer of yttrium (thermal conductivity: 149Wm-1K-1) or yttrium carbide (thermal conductivity: 150Wm-1K-1) which is excellent in heat dissipation. However, tantalum and or tantalum carbide easily react with the etching gas, resulting in a shortened service life of the shower head. In response to the above problems, a cerium oxide-covered shower head having better etching resistance has appeared.
與上述中提到的噴淋頭的抗刻蝕目的類似,用於等離子體刻蝕的其他工件表面一般都覆蓋有氧化釔包 覆層。 Similar to the anti-etching purpose of the showerhead mentioned above, the surface of other workpieces used for plasma etching is generally covered with a ruthenium oxide package. Cladding.
然而,本發明人發現,在具有氧化釔包覆層的工件使用一段時間後,其表面會有一些污染物,該污染物不進行處理,堆積起來容易掉落在待刻蝕晶片上,導致污染,最終降低晶片生產效率。 However, the inventors have found that after a workpiece having a ruthenium oxide coating layer is used for a period of time, there are some contaminants on the surface, and the contaminant is not treated, and is easily deposited on the wafer to be etched, resulting in contamination. , ultimately reducing wafer production efficiency.
有鑒於此,實有必要提出一種用於等離子體刻蝕的具有氧化釔包覆層的工件的污染物處理方法,以避免上述問題。 In view of this, it is necessary to propose a method of treating a contaminant of a workpiece having a yttria coating for plasma etching to avoid the above problems.
本發明實現的目的是提出一種用於等離子體刻蝕的具有氧化釔包覆層的工件的污染物處理方法,使被污染的工件重新得以使用。 The object of the present invention is to propose a method for treating a pollutant of a workpiece having a yttria coating for plasma etching, so that the contaminated workpiece can be reused.
為實現上述目的,本發明提供一種用於等離子體刻蝕的具有氧化釔包覆層的工件的污染物處理方法,包括:至少採用酸性溶液擦拭所述工件,所述酸性溶液為鹽酸,所述鹽酸中HCl在去離子水中的重量濃度範圍為3wt%-10wt%;之後再採用去離子水沖洗所述工件,其中,所述去離子水沖洗過程中,該去離子水中添加有異丙醇,該去離子水的溫度為50℃以上。。 To achieve the above object, the present invention provides a method for treating a contaminant of a workpiece having a yttria coating for plasma etching, comprising: wiping the workpiece with at least an acidic solution, the acidic solution being hydrochloric acid, The concentration of HCl in hydrochloric acid in deionized water ranges from 3 wt% to 10 wt%; the workpiece is then rinsed with deionized water, wherein the deionized water is added with isopropanol during the deionized water rinse. The temperature of the deionized water is 50 ° C or higher. .
較佳地,所述去離子水沖洗過程中採用超音波震盪。 Preferably, the ultrasonic wave oscillation is used in the deionized water rinsing process.
較佳地,所述去離子水沖洗過程中採用高壓去離子水清洗。 Preferably, the deionized water is washed with high pressure deionized water.
較佳地,採用高壓去離子水清洗過程中,所述去離子水中包含顆粒物。 Preferably, during the high pressure deionized water cleaning process, the deionized water contains particulate matter.
較佳地,所述顆粒物包括氧化釔、氧化鋁、氧化 鋯、氧化矽中的至少一種。 Preferably, the particulate matter comprises cerium oxide, aluminum oxide, oxidation At least one of zirconium and cerium oxide.
較佳地,所述顆粒物的尺寸範圍為10nm-1mm。 Preferably, the size of the particulate matter ranges from 10 nm to 1 mm.
較佳地,所述顆粒物的重量百分濃度小於50wt%。 Preferably, the particulate matter has a concentration by weight of less than 50% by weight.
較佳地,採用高壓去離子水清洗過程中,所述去離子水的壓強範圍為0.5MPa-50MPa。 Preferably, during the high pressure deionized water cleaning process, the deionized water has a pressure in the range of 0.5 MPa to 50 MPa.
較佳地,所述去離子水的壓強範圍為1MPa-30MPa。 Preferably, the deionized water has a pressure in the range of 1 MPa to 30 MPa.
較佳地,所述去離子水的壓強範圍為2MPa-20MPa。 Preferably, the deionized water has a pressure in the range of 2 MPa to 20 MPa.
較佳地,所述去離子水沖洗過程中去離子水中添加有異丙醇。 Preferably, isopropanol is added to the deionized water during the deionized water rinse.
較佳地,所述去離子水沖洗過程中去離子水的溫度範圍為70℃-120℃,所述異丙醇的重量百分濃度小於90wt%。 Preferably, the temperature of the deionized water during the deionized water washing is in the range of 70 ° C to 120 ° C, and the weight percent concentration of the isopropanol is less than 90 wt %.
較佳地,所述異丙醇的重量百分濃度的範圍為1wt%-80wt%。 Preferably, the weight percent concentration of the isopropyl alcohol ranges from 1% by weight to 80% by weight.
較佳地,所述異丙醇的重量百分濃度的範圍為1wt%-50wt%。 Preferably, the weight percent concentration of the isopropyl alcohol ranges from 1% by weight to 50% by weight.
較佳地,所述酸性溶液還包括硝酸、HF酸的至少一種。 Preferably, the acidic solution further comprises at least one of nitric acid and HF acid.
較佳地,所述酸性溶液為鹽酸,所述鹽酸中HCl在去離子水中的重量百分濃度小於90wt%。 Preferably, the acidic solution is hydrochloric acid, and the concentration by weight of HCl in deionized water is less than 90% by weight.
較佳地,所述鹽酸中HCl在去離子水中的重量百分濃度的範圍為1wt%-15wt%。 Preferably, the concentration by weight of HCl in deionized water in the hydrochloric acid ranges from 1% by weight to 15% by weight.
較佳地,所述鹽酸中HCl在去離子水中的重量百分濃度的範圍為3wt%-10wt%。 Preferably, the concentration by weight of HCl in deionized water in the hydrochloric acid ranges from 3 wt% to 10 wt%.
較佳地,採用酸性溶液擦試所述工件之前或之後,還進行使用鹼性溶液擦拭所述工件的步驟,所述鹼 性溶液為KOH溶液、NaOH溶液、NH4OH溶液中的至少一種。 Preferably, the step of wiping the workpiece with an alkaline solution, the base, is also performed before or after wiping the workpiece with an acidic solution The solution is at least one of a KOH solution, a NaOH solution, and a NH4OH solution.
較佳地,所述鹼性溶液為NH4OH溶液,所述NH4OH溶液中NH4OH在去離子水中的重量百分濃度小於50wt%。 Preferably, the alkaline solution is a NH4OH solution, and the weight concentration of NH4OH in the deionized water in the NH4OH solution is less than 50% by weight.
較佳地,所述NH4OH溶液中NH4OH在去離子水中的重量百分濃度的範圍為1wt%-30wt%。 Preferably, the concentration by weight of NH4OH in deionized water in the NH4OH solution ranges from 1% by weight to 30% by weight.
較佳地,所述NH4OH溶液中NH4OH在去離子水中的重量百分濃度的範圍為1wt%-5wt%。 Preferably, the concentration by weight of NH4OH in deionized water in the NH4OH solution ranges from 1% by weight to 5% by weight.
較佳地,採用鹼性溶液擦拭所述噴淋頭步驟之後還進行採用去離子水沖洗所述噴淋頭步驟。 Preferably, the step of rinsing the showerhead with deionized water is followed by a step of wiping the showerhead with an alkaline solution.
較佳地,採用鹼性溶液擦拭所述工件步驟之後還進行的採用去離子水沖洗所述工件步驟中,採用超音波震盪、高壓去離子水清洗、去離子水中添加有異丙醇、去離子水的溫度為50℃以上中的至少一種。 Preferably, in the step of rinsing the workpiece with deionized water after the step of wiping the workpiece with an alkaline solution, ultrasonic wave oscillating, high pressure deionized water washing, deionized water is added with isopropanol, deionized The temperature of the water is at least one of 50 ° C or higher.
與現有技術相比,本發明具有以下優點:具有氧化釔包覆層的工件在使用過一段時間後,其上會產生一些污染物,該污染物的主要成分為氟、釔、鋁、碳及氧之間的化合物,以及其他含有金屬元素如銅、鈦等的污染物,通過使用酸性溶液可以去除大部分附著力較差的污染物,之後採用去離子水沖洗後,可以使被污染的噴淋頭重新得以使用;進一步地,對於少部分附著力較強的污染物,在使用去離子水沖洗過程中採用超音波震盪或採用高壓去離子水去除;進一步地,對於個別附著力極強的污染物,採用包含顆粒物的去離子水進行清洗;進一步地,由於異丙醇的浸潤性很強,去離子水 沖洗過程中去離子水中添加有異丙醇,可以增強去離子水在污染物表面的浸潤能力,易於使污染物被清洗去除;進一步地,由於氟化鋁溶於熱水,去離子水沖洗過程中增加水的溫度,可以使氟化鋁為基的污染物在與氧化釔接觸的面上鬆動,易於使污染物被清洗去除;進一步地,由於氧化釔溶於酸,因而在去除污染物時,為防止損害氧化釔的性能,酸在去離子水中的濃度需嚴格控制。 Compared with the prior art, the invention has the following advantages: after using the yttrium oxide coating layer, some pollutants are generated on the workpiece after a period of use, and the main components of the pollutant are fluorine, bismuth, aluminum, carbon and Compounds between oxygen and other contaminants containing metal elements such as copper, titanium, etc., can remove most of the poorly adhering contaminants by using an acidic solution, and then rinsed with deionized water to make the contaminated spray The head is re-used; further, for a small number of highly contaminant contaminants, ultrasonic wave turbulence or high-pressure deionized water is used during the deionized water rinsing process; further, for the strong adhesion of individual adhesion Washing with deionized water containing particulate matter; further, due to the strong wetting of isopropanol, deionized water Isopropanol is added to the deionized water during the rinsing process to enhance the infiltration ability of the deionized water on the surface of the contaminant, and the contaminant is easily removed by cleaning; further, since the aluminum fluoride is dissolved in the hot water, the deionized water is rinsed. Increasing the temperature of the water allows the aluminum fluoride-based contaminants to loosen on the surface in contact with the cerium oxide, and is easy to clean and remove the contaminants; further, since the cerium oxide is dissolved in the acid, the contaminant is removed. In order to prevent damage to the performance of cerium oxide, the concentration of acid in deionized water needs to be strictly controlled.
如背景技術中所述,具有氧化釔包覆層的工件在使用過一段時間後,其上會產生一些污染物,本發明人對該污染物進行了SEM測試與EDS譜分析,結果分別如圖1與圖2所示,其主要成分為氟、釔為基的化合物,進行本發明提出使用酸性溶液去除大部分附著力較差的污染物,之後採用去離子水沖洗後,可以使被污染的工件重新得以使用。 As described in the background art, after the workpiece having the yttrium oxide coating layer is used for some time, some contaminants are generated thereon, and the inventors performed SEM test and EDS spectrum analysis on the pollutant, and the results are respectively shown in the figure. 1 and FIG. 2, the main component of which is fluorine, ruthenium-based compound, the present invention proposes to use an acidic solution to remove most of the poorly-contaminated contaminants, and then rinsed with deionized water to make the contaminated workpiece Re-use it.
為使本發明的上述目的、特徵和優點能夠更為明顯易懂,下面結合附圖對本發明的具體實施方式做詳細的說明。由於重在說明本發明的原理,因此,未按比例製圖。 The above described objects, features and advantages of the present invention will become more apparent from the aspects of the invention. Since the principles of the invention are illustrated, they are not drawn to scale.
以下以噴淋頭為例,圖3所示為本發明實施例提供的具有氧化釔包覆層的噴淋頭的污染物處理方法流程圖。以下結合圖3,詳細介紹該處理方法的實施過程。 Taking a shower head as an example, FIG. 3 is a flow chart showing a method for treating a pollutant of a shower head having a ruthenium oxide coating layer according to an embodiment of the present invention. The implementation process of the processing method will be described in detail below with reference to FIG. 3.
首先執行步驟S11,採用異丙醇(IPA)擦拭具有氧化釔包覆層的噴淋頭上的污染物。 First, step S11 is performed to wipe the contaminants on the shower head having the ruthenium oxide coating layer with isopropyl alcohol (IPA).
該污染物的成分前面所述,主要為等離子體刻蝕過程中含氟刻蝕氣體與氧化釔包覆層反應產生的氟、釔 為基的化合物。 The composition of the contaminant is mainly described above, which is mainly fluorine and antimony produced by the reaction of the fluorine-containing etching gas and the cerium oxide coating layer in the plasma etching process. a compound based.
異丙醇的浸潤能力很強,異丙醇溶於後續步驟S12的去離子水後,能增強去離子水進入污染物與氧化釔層的介面的浸潤能力,易於在後續步驟中清洗去除該污染物。 Isopropanol has strong infiltration ability. After dissolving the isopropanol in the deionized water of the subsequent step S12, it can enhance the infiltration ability of the deionized water into the interface between the contaminant and the cerium oxide layer, and is easy to clean and remove the pollution in the subsequent steps. Things.
接著執行步驟S12,採用去離子水沖洗。為增強污染物去除效果,本步驟中可以(1)使用超音波清洗,(2)去離子水中也可以添加異丙醇,(3)去離子水的溫度也可以控制在50℃以上,也可以(4)採用高壓去離子水清洗。上述四種方法可以同時使用,也可以擇一使用,根據去除效果而定。 Then, step S12 is performed, and rinsed with deionized water. In order to enhance the effect of pollutant removal, in this step, (1) ultrasonic cleaning can be used, (2) isopropanol can also be added in deionized water, and (3) the temperature of deionized water can also be controlled above 50 °C, or (4) Wash with high pressure deionized water. The above four methods can be used at the same time or alternatively, depending on the removal effect.
對於(1),採用的超音波的具體頻率及功率根據去除效果而定。 For (1), the specific frequency and power of the ultrasonic waves used are determined according to the removal effect.
對於(2),由於異丙醇易揮發,因而,在去離子水清洗步驟中,對異丙醇的添加量不易過大,本發明人發現,本步驟中去離子水的溫度範圍為70℃-120℃,所述異丙醇在去離子水中的重量百分濃度小於90wt%時,可以不影響氧化釔的功能且能有效去除污染物,優選地,異丙醇的重量百分濃度範圍為1wt%-80wt%,更佳地,所述異丙醇的重量百分濃度範圍為1wt%-50wt%。 For (2), since isopropanol is volatile, the amount of isopropanol added in the deionized water washing step is not too large, and the inventors have found that the temperature of the deionized water in this step is 70 ° C - At 120 ° C, when the weight percentage concentration of the isopropanol in deionized water is less than 90% by weight, the function of the cerium oxide may not be affected and the pollutants can be effectively removed. Preferably, the weight concentration of the isopropyl alcohol is in the range of 1 wt. More preferably, the weight percent concentration of the isopropanol ranges from 1% by weight to 50% by weight.
對於(3),由於氟化鋁溶於熱水,去離子水沖洗過程中增加水的溫度,可以使氟化鋁為基的污染物在與氧化釔接觸的面上鬆動,易於使污染物被清洗去除; For (3), since the aluminum fluoride is dissolved in hot water, the temperature of the water is increased during the deionized water washing process, so that the aluminum fluoride-based contaminant can be loosened on the surface in contact with the cerium oxide, and the contaminant is easily Cleaning and removal;
對於(4),採用高壓去離子水清洗時,本發明人發現,在壓強範圍為0.5MPa-50MPa時,對污染物去除效果明顯,優選地,去離子水的壓強範圍為1MPa-30MPa,更佳地,去離子水的壓強範圍為2MPa-20MPa,在去除污染物的前提下,損害氧化釔的程度最少。 For (4), when cleaning with high pressure deionized water, the inventors have found that when the pressure range is from 0.5 MPa to 50 MPa, the effect of removing contaminants is remarkable, and preferably, the pressure of deionized water ranges from 1 MPa to 30 MPa, and more Preferably, the pressure of deionized water ranges from 2 MPa to 20 MPa, and the degree of damage to yttrium oxide is minimized on the premise of removing contaminants.
此外,採用高壓去離子水清洗過程中,對於一些上述方法都無法去除的附著力極強的污染物,可以採用(5)在去離子水中添加顆粒物。該顆粒物會增大該污染物被剝離下來的幾率。具體實施過程中,該顆粒物可以包括氧化釔、氧化鋁、氧化鋯或氧化矽中的一種或幾種,顆粒尺寸範圍為10nm-1mm。同時還可以控制該顆粒物的含量,本發明人發現,該顆粒物在所述去離子水中的重量百分濃度小於50wt%時,可以將一些採用(1)-(4)方法無法去除的污染物去除。 In addition, in the high-pressure deionized water cleaning process, for some of the highly adherent contaminants that cannot be removed by the above methods, it is possible to use (5) adding particulate matter in deionized water. The particulate matter increases the probability that the contaminant will be stripped off. In a specific implementation, the particulate matter may include one or more of cerium oxide, aluminum oxide, zirconium oxide or cerium oxide, and the particle size ranges from 10 nm to 1 mm. At the same time, the content of the particulate matter can also be controlled. The inventors have found that when the weight concentration of the particulate matter in the deionized water is less than 50% by weight, some pollutants which cannot be removed by the methods (1) to (4) can be removed. .
然後執行步驟S13,採用酸性溶液擦拭。本步驟中的酸性溶液可以為鹽酸、硝酸或HF酸,由於作為覆蓋層的氧化釔溶於酸,即使是擦拭,也需對酸的濃度控制需嚴格控制。本實施例中採用鹽酸,本發明人發現,該鹽酸中HCl在去離子水中的重量百分濃度小於90wt%時,適當控制擦拭時間,可以即不損害包覆層氧化釔,又可以去除污染物,優選地,鹽酸中HCl的重量百分濃度範圍為1wt%-15wt%,更佳地,鹽酸中HCl的重量百分濃度範圍為3wt%-10wt%。 Then, step S13 is performed, and the solution is wiped with an acidic solution. The acidic solution in this step may be hydrochloric acid, nitric acid or HF acid. Since the cerium oxide as a coating layer is soluble in acid, even if it is wiped, the concentration control of the acid needs to be strictly controlled. In the present embodiment, hydrochloric acid is used. The inventors have found that when the concentration of HCl in deionized water is less than 90% by weight, the wiping time can be appropriately controlled, and the coating layer can be removed without damaging the coating. Preferably, the weight percent concentration of HCl in the hydrochloric acid ranges from 1% by weight to 15% by weight, and more preferably, the weight percent concentration of HCl in the hydrochloric acid ranges from 3% by weight to 10% by weight.
然後執行步驟S14,採用去離子水沖洗。本步驟與S12步驟相同。但可以從(1)-(5)方案中選擇一種或幾種方案。執行本步驟,可以增強從氧化釔表面剝離的污染物的清除功能。 Then step S14 is performed and rinsed with deionized water. This step is the same as step S12. However, one or several schemes can be selected from the (1)-(5) schemes. Performing this step enhances the removal of contaminants from the surface of the cerium oxide.
之後執行步驟S15,採用鹼性溶液擦拭。本步驟中的鹼性溶液可以為KOH溶液、NaOH溶液或NH4OH溶液。 Thereafter, step S15 is performed, and the solution is wiped with an alkaline solution. The alkaline solution in this step may be a KOH solution, a NaOH solution or a NH4OH solution.
本實施例中採用NH4OH溶液,所述NH4OH溶液中NH4OH在去離子水中的重量百分濃度小於50wt%,可以中和之前未清洗掉的酸性溶液,此外,該鹼性溶液 也可以與污染物發生反應,使污染物溶入鹼性溶液而被去除。優選地,所述NH4OH溶液中NH4OH在去離子水中的重量百分濃度範圍為1wt%-30wt%。更佳地,所述NH4OH溶液中NH4OH在去離子水中的重量百分濃度範圍為1wt%-5wt%。 In this embodiment, an NH4OH solution is used. The concentration of NH4OH in the deionized water in the NH4OH solution is less than 50% by weight, and the acidic solution that has not been washed before can be neutralized. In addition, the alkaline solution is further It can also be reacted with contaminants to remove contaminants dissolved in an alkaline solution. Preferably, the concentration of NH4OH in the NH4OH solution in deionized water ranges from 1% by weight to 30% by weight. More preferably, the weight percent concentration of NH4OH in the deionized water in the NH4OH solution ranges from 1 wt% to 5 wt%.
接著執行步驟S16,採用去離子水沖洗。本步驟與S12步驟相同。但可以從(1)-(5)方案中選擇一種或幾種方案。執行本步驟,可以增強從氧化釔表面剝離的污染物的清除功能。 Then, step S16 is performed, and rinsed with deionized water. This step is the same as step S12. However, one or several schemes can be selected from the (1)-(5) schemes. Performing this step enhances the removal of contaminants from the surface of the cerium oxide.
之後執行步驟S17,對經上述處理的噴淋頭表面進行檢查,判斷污染物去除是否符合要求,如果符合使用要求,則處理完畢,如果不符合要求,則重新執行步驟S13-S17,直到符合要求。 Then, step S17 is performed to check the surface of the shower head that has been processed to determine whether the pollutant removal meets the requirements. If the requirements are met, the processing is completed. If the requirements are not met, steps S13-S17 are performed again until the requirements are met. .
需要說明的是,上述描述的步驟S11-S17,每個步驟執行完畢,可以採用常規工藝中的去離子水沖洗,以將本步驟中從氧化釔表面剝離的污染物清洗掉。 It should be noted that, in the steps S11-S17 described above, each step is performed, and the deionized water in the conventional process can be used to wash away the contaminants peeled off from the surface of the cerium oxide in this step.
本實施例中的S15步驟中採用鹼性溶液擦拭所述噴淋頭,也可以在步驟S13採用酸性溶液擦拭所述噴淋頭之前進行,後進行的酸性溶液擦拭可以中和在先進行的鹼性溶液擦拭過程中,未完全清洗掉的鹼性溶液。 In the step S15 in this embodiment, the shower head is wiped with an alkaline solution, or may be performed before the shower head is wiped with an acidic solution in step S13, and the acidic solution wiped after the neutralization may neutralize the previously performed alkali. The alkaline solution that was not completely washed during the wiping of the solution.
上述描述的是一個標準的去污染物的流程,適於批次處理。在具體實施過程中,可以挑選部分步驟,但至少需進行酸性溶液去除,之後採用去離子水清洗兩個步驟。 What has been described above is a standard decontaminant process suitable for batch processing. In the specific implementation process, some steps can be selected, but at least acidic solution removal is required, followed by two steps of washing with deionized water.
以上描述的是對包覆氧化釔的噴淋頭的污染物的處理流程,對於其他用於等離子刻蝕工藝中,具有氧化釔包覆層的工件,例如聚焦環表面的污染物,其處理流程與上述流程相同。 The above describes the treatment process for the contaminants of the cerium oxide coated sprinkler. For other workpieces with a yttrium oxide coating in the plasma etching process, such as the contamination of the surface of the focus ring, the processing flow The same as the above process.
綜上,本發明具有以下優點:具有氧化釔包覆層的工件在用於等離子體刻蝕一段時間後,其上會產生一些污染物,該污染物的主要成分為氟、釔、鋁、碳及氧之間的化合物,以及其他含有金屬元素如銅、鈦等的污染物,通過使用酸性溶液可以去除大部分附著力較差的污染物,之後採用去離子水沖洗後,可以使被污染的噴淋頭重新得以使用。 In summary, the present invention has the following advantages: after a portion of a workpiece having a yttria coating is used for plasma etching, some contaminants are generated thereon, and the main components of the contaminant are fluorine, antimony, aluminum, and carbon. Compounds between oxygen and other contaminants containing metal elements such as copper, titanium, etc., can remove most of the poorly adhering contaminants by using an acidic solution, and then rinsed with deionized water to make the contaminated spray The sprinklers are re-used.
對於少部分附著力較強的污染物,在使用去離子水沖洗過程中採用(1)使用超音波震盪,(2)去離子水中也可以添加異丙醇,異丙醇的浸潤能力很強,可以增強該去離子水對噴淋頭表面污染物的浸潤能力,從而可以快速將該污染物去除;(3)去離子水的溫度也可以控制在50℃以上,升高去離子水溶液的溫度,可以增強水溶液對氟化鋁污染物的溶解能力,使氟化鋁為基的污染物在與氧化釔接觸的面上鬆動,易於使污染物被清洗去除;也可以(4)採用高壓去離子水清洗,對氧化釔薄膜損害程度小,同時達到從氧化釔表面剝離污染物的能力。 For a small number of highly contaminant contaminants, the use of deionized water washing process (1) using ultrasonic vibration, (2) deionized water can also add isopropanol, isopropanol infiltration ability is very strong, The deionized water can enhance the infiltration ability of the surface of the shower head, so that the pollutant can be quickly removed; (3) the temperature of the deionized water can also be controlled above 50 ° C, and the temperature of the deionized water solution is raised. It can enhance the solubility of aqueous solution to aluminum fluoride contaminants, so that aluminum fluoride-based contaminants loosen on the surface in contact with cerium oxide, which is easy to clean and remove contaminants; (4) use high-pressure deionized water Cleaning, the degree of damage to the yttrium oxide film is small, and at the same time the ability to peel off the surface from the yttrium oxide surface.
對於個別附著力極強的污染物,採用(5)包含顆粒物的去離子水進行清洗。 For individual highly adherent contaminants, (5) deionized water containing particulate matter is used for cleaning.
由於氧化釔容易溶於酸性溶液,因而酸在去離子水中的濃度需嚴格控制,例如為鹽酸時,HCl在去離子水中的重量百分濃度小於90wt%。 Since cerium oxide is easily dissolved in an acidic solution, the concentration of the acid in deionized water is strictly controlled. For example, when hydrochloric acid is used, the concentration by weight of HCl in deionized water is less than 90% by weight.
鹼性溶液清洗所述噴淋頭步驟後還進行去離子水沖洗步驟,該去離子水沖洗步驟中,可以採用上述的(1)-(5)步驟,增強從氧化釔表面剝離的污染物的清除功能。 After the step of washing the alkaline solution, the shower head is further subjected to a deionized water rinsing step. In the deionized water rinsing step, the above steps (1) to (5) may be used to enhance the peeling of the contaminant from the cerium oxide surface. Clear function.
本發明雖然已以較佳實施例公開如上,但其並不 是用來限定本發明,任何本領域技術人員在不脫離本發明的精神和範圍內,都可以利用上述揭示的方法和技術內容對本發明技術方案做出可能的變動和修改,因此,凡是未脫離本發明技術方案的內容,依據本發明的技術實質對以上實施例所作的任何簡單修改、等同變化及修飾,均屬於本發明技術方案的保護範圍。 Although the present invention has been disclosed above in the preferred embodiment, it is not The present invention can be used to define the present invention, and any person skilled in the art can make possible changes and modifications to the technical solutions of the present invention by using the methods and technical contents disclosed above without departing from the spirit and scope of the present invention. In the content of the technical solutions of the present invention, any simple modifications, equivalent changes, and modifications made to the above embodiments in accordance with the technical scope of the present invention are within the scope of protection of the technical solutions of the present invention.
Q‧‧‧區域 Q‧‧‧Area
圖1是污染物的SEM測試結果;圖2是圖1中Q區域的EDS測試結果圖;圖3是本發明實施例提供的污染物的處理方法的流程圖。 1 is a SEM test result of a contaminant; FIG. 2 is a EDS test result chart of the Q area in FIG. 1; FIG. 3 is a flow chart of a contaminant processing method provided by an embodiment of the present invention.
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