CN110600388A - Method for improving crystallization defect of aluminum bonding pad - Google Patents
Method for improving crystallization defect of aluminum bonding pad Download PDFInfo
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- CN110600388A CN110600388A CN201910938039.0A CN201910938039A CN110600388A CN 110600388 A CN110600388 A CN 110600388A CN 201910938039 A CN201910938039 A CN 201910938039A CN 110600388 A CN110600388 A CN 110600388A
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- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/02—Bonding areas ; Manufacturing methods related thereto
- H01L24/03—Manufacturing methods
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- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/02—Bonding areas ; Manufacturing methods related thereto
- H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L24/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
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- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/0212—Auxiliary members for bonding areas, e.g. spacers
- H01L2224/02122—Auxiliary members for bonding areas, e.g. spacers being formed on the semiconductor or solid-state body
- H01L2224/02163—Auxiliary members for bonding areas, e.g. spacers being formed on the semiconductor or solid-state body on the bonding area
- H01L2224/02165—Reinforcing structures
- H01L2224/02166—Collar structures
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/03—Manufacturing methods
- H01L2224/038—Post-treatment of the bonding area
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/03—Manufacturing methods
- H01L2224/038—Post-treatment of the bonding area
- H01L2224/0381—Cleaning, e.g. oxide removal step, desmearing
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/03—Manufacturing methods
- H01L2224/039—Methods of manufacturing bonding areas involving a specific sequence of method steps
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/05001—Internal layers
- H01L2224/05099—Material
- H01L2224/051—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/05117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
- H01L2224/05124—Aluminium [Al] as principal constituent
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/05599—Material
- H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/05617—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
- H01L2224/05624—Aluminium [Al] as principal constituent
Abstract
The invention discloses a method for improving the crystal defect of an aluminum bonding pad, which comprises the following steps: step one, forming an aluminum bonding pad on a wafer. And step two, forming a chip protection layer consisting of a silicon nitride layer. And step three, opening a forming area of the aluminum bonding pad by photoetching, and removing the chip protection layer on the top of the aluminum bonding pad by adopting a dry etching process of etching gas including fluorine-containing gas. And step four, carrying out wet cleaning on the wafer. And step five, calculating the thickness of the surface area with the residual fluorine element in the aluminum bonding pad after the step four, and removing the aluminum in the surface area with the residual fluorine element by adopting an ion bombardment method. The invention can reduce or eliminate the crystal defect on the aluminum bonding pad, thereby improving the bonding quality of the semiconductor and improving the packaging quality and reliability.
Description
Technical Field
The present invention relates to a method for manufacturing a semiconductor integrated circuit, and more particularly, to a method for improving crystal defects of an aluminum pad.
Background
In modern semiconductor technology, with the increase of integrated circuit integration and the continuous reduction of size, the precision requirement of microelectronic packaging is higher and higher, and the difficulty of controlling and improving bonding quality and reliability is increased. Aluminum pads (Al pads) are generally used as chip pads (pads) of integrated circuits, crystals (crystals) on the aluminum pads are generally referred to as PDCY (Crystal defect) or PadCrystal, for the aluminum pads, PDCY is a defect (defect) or Crystal defect, and the Crystal defect is one of the main problems which can cause bonding failure in the semiconductor manufacturing process, and currently, no good solution exists internationally. Therefore, the method is used for solving the process defect problem of crystal defect of the bonding pad, and has high theoretical and application values for improving the bonding, packaging quality and reliability of the semiconductor.
Disclosure of Invention
The invention aims to provide a method for improving the crystallization defect of an aluminum bonding pad, which can reduce or eliminate the crystallization defect on the aluminum bonding pad, thereby improving the bonding quality of a semiconductor and the packaging quality and reliability.
In order to solve the above technical problem, the method for improving the crystal defect of the aluminum bonding pad provided by the invention comprises the following steps:
step one, forming an aluminum bonding pad on a wafer.
And secondly, forming a chip protection layer consisting of a silicon nitride layer on the surface of the wafer on which the aluminum bonding pad is formed.
Step three, opening a forming area of the aluminum bonding pad by photoetching, and removing the chip protection layer on the top of the aluminum bonding pad by adopting a dry etching process of etching gas including fluorine-containing gas; fluorine may remain in the surface region of the aluminum pad in the dry etching process.
And step four, carrying out wet cleaning on the wafer subjected to the dry etching process.
And step five, calculating the thickness of the surface area with the fluorine element remained in the aluminum bonding pad after the step four, and removing the aluminum of the surface area with the fluorine element remained in the aluminum bonding pad by adopting an ion bombardment method so as to improve the crystal defect of the aluminum bonding pad.
In a further improvement, the ion bombardment of step five employs an ion source comprising inert gas ions.
In a further improvement, the ion source of the ion bombardment in the step five is Ar ions.
In a further improvement, NE111 is adopted as the cleaning liquid medicine for the wet cleaning in the step four.
In a further improvement, in the fourth step, the moisture on the aluminum pad is reduced by reducing the wet cleaning time, so as to improve the crystallization defects of the aluminum pad.
The further improvement is that the dry etching process in the third step further comprises an over-etching process, and the over-etching process continuously etches the surface of the aluminum bonding pad after the surface of the aluminum bonding pad is exposed.
In a further improvement, in the first step, a top copper layer is already formed on the wafer before the aluminum pad is formed, and the step of forming the aluminum pad includes:
and 11, growing a top silicon oxide film.
And step 12, etching the top silicon oxide film by adopting a photoetching and etching process to form a redistribution through hole groove.
And step 13, depositing top aluminum, wherein the top aluminum completely fills the redistribution via groove and extends to the outside of the redistribution via groove.
And 14, performing aluminum etching, wherein the top aluminum remained in the redistribution through hole groove after the aluminum etching forms a top aluminum wire and the aluminum bonding pad.
The wafer is further improved in that a semiconductor device is formed in an inner area below the surface of the wafer, more than one copper layer is formed between the surface of the wafer and the top copper layer, an interlayer film is isolated between the copper layers including the top copper layer, the adjacent copper layers are connected through a through hole, and the bottom copper layer is connected with a doped area of the semiconductor device through a contact hole.
In a further improvement, each of the copper layers is formed using a damascene process.
In a further improvement, the interlayer film is an oxide film.
In a further improvement, step 13 further comprises the step of depositing a metal barrier layer or adhesion layer before depositing the top aluminum layer.
In a further improvement, step 11 further comprises a step of forming a second silicon nitride layer before growing the top silicon oxide film.
In a further improvement, step 11 further comprises a step of forming a second silicon nitride layer before growing the top silicon oxide film.
In a further improvement, the wafer is a silicon substrate wafer.
In a further improvement, in the fifth step, the thickness of the surface region of the aluminum pad where the fluorine element remains after the fourth step is calculated by an auger electron spectroscopy analysis method.
The further improvement is that the thickness of the surface area of the aluminum bonding pad with residual fluorine element after the fourth step is tens of
The invention can prevent fluorine and water vapor in the environment from generating electrochemical operation on aluminum to form crystals, thereby improving the crystal defects of the aluminum bonding pad, reducing or eliminating the crystal defects on the aluminum bonding pad, improving the bonding quality of a semiconductor and improving the packaging quality and reliability, and the specific principle is as follows:
the technical scheme of the invention is designed according to the technical problem of reducing or eliminating the crystallization defect on the aluminum bonding pad, the technical scheme of the invention is that after a chip protective layer on the top of the aluminum bonding pad is etched by adopting a dry etching process and wet cleaning is carried out in the prior art, the thickness of a surface area with fluorine elements remained in the aluminum bonding pad is calculated, then, the aluminum on the surface area with the fluorine elements remained in the aluminum bonding pad is removed by adopting an ion bombardment method, and the fluorine elements remained in the aluminum bonding pad due to the dry etching process are removed, so that a necessary electrochemical reaction model for generating PDCY can be fundamentally damaged, the PDCY problem existing in FAB for a long time is thoroughly solved, and incomparable economic benefits are brought.
Drawings
The invention is described in further detail below with reference to the following figures and detailed description:
FIGS. 1A-1B are schematic diagrams of the device structure in each step of the electrochemical reaction model corresponding to the crystalline defect of the aluminum pad generated in the prior art method;
FIG. 2 is a photograph of a bonding failure site generated by an aluminum pad crystal defect in a prior art method;
FIG. 3 is a plot of fluorine distribution over the surface area of a prior art aluminum pad;
FIG. 4 is a flow chart of a method for improving the crystal defect of the aluminum pad according to an embodiment of the present invention;
fig. 5 is a schematic diagram of a corresponding device structure in the method according to the embodiment of the present invention.
Detailed Description
The prior method comprises the following steps:
the method for improving the crystal defect of the aluminum pad in the embodiment of the invention is obtained by deeply analyzing the technical problems of the existing method, so the reason for the existence of PDCY in the existing method and the corresponding improvement method are introduced before the method in the embodiment of the invention is introduced.
As shown in fig. 1A to fig. 1B, the device structure is schematically illustrated in each step of generating an electrochemical reaction model corresponding to the aluminum pad crystal defect in the conventional method; three important steps in the manufacturing process of the aluminum Pad 106 are Redistribution Via (RV) trench, Aluminum Pad Layer (APL) and chip protection Layer (Cover, CV). In the first step, a top silicon oxide film 104 is grown and an RV trench is etched on a wafer on which a copper damascene interconnect process is completed, i.e., a top copper layer 101 is completed. And secondly, depositing a metal barrier layer or a glue layer, namely the adhesion layer 105 and a top aluminum film, by a physical vapor deposition process, and forming an aluminum wire and a bonding pad, namely an APL (active power line) in the RV groove by aluminum etching. Thirdly, depositing a silicon nitride barrier layer film as a chip protective layer 108 by a plasma enhanced chemical vapor deposition process, then etching and cleaning by pad windowing to form an aluminum pad 106 exposed in the air, and combining the F element on the surface of the aluminum pad 106 with external water vapor to cause a crystal defect 109 as time goes on.
Fig. 1A also includes a topmost interlayer film 102, and a plurality of copper layers and interlayer films are also included between the bottom of the topmost copper layer 101 and topmost interlayer film 102 and the wafer surface. Semiconductor devices are formed in the wafer.
One of the mechanisms for forming the crystal defects is known as an electrochemical reaction model, in which the first step is an electrochemical reaction, and a system composed of an aluminum oxide film and a metallic aluminum film on the surface of the aluminum pad 106 generates aluminum hydroxide under the combined action of fluorine ions and water vapor, as shown in fig. 1A, F represents fluorine ions, and H2O represents water vapor; the second step is acid-base neutralization reaction, and aluminum hydroxide on the surface generates a crystalline compound AlOxFy containing aluminum fluorine oxygen under the action of hydrofluoric acid, and the crystalline compound AlOxFy is the crystalline defect 109.
In the semiconductor manufacturing process, F-containing gas is required to be used for etching the passivation layer, i.e., the chip protection layer 108, F element is inevitably introduced, and PDCY is easily generated due to fluctuation of the external environment, which is also an unavoidable process defect in the semiconductor industry, and a good solution is not available internationally at present.
As can be seen from the analysis of the electrochemical reaction model, the formation of the crystal defect 109 includes two factors, respectively: contains F element; and (5) external water vapor.
In the primary stage of improvement, the crystal defect 109 is improved by reducing the element residue and moisture. After the experiment is carried out, the effect of independently debugging the dry etching and wet cleaning process is very little from the experimental result, and the crystallization defect is easy to occur along with the fluctuation of an external link.
FIG. 3 shows a fluorine distribution curve of the surface area of an aluminum pad according to the prior art; the curve 202 corresponds to the distribution curve of fluorine element in the surface region of the aluminum pad corresponding to the case where no improvement is made to the conventional method, the curve 203 is the improvement of the dry etching process and the over-etching (OE) process in the dry etching process is enhanced, and it can be seen from comparing the curves 203 and 202 that the over-etching process can enhance the F-removing ability of the Al surface, i.e., reduce the F-containing element, and the distribution range of the F-containing element is shown by the arrow line 204. Although the F element in curve 203 is reduced, this method can only expand the PDCY window to more than three weeks, i.e., no PDCY will be generated in a time frame of about three weeks, but as the environment fluctuates, PDCY still occurs, and the problem cannot be solved fundamentally.
Similarly, water vapor can be reduced and surface passivation can be enhanced by reducing wet cleaning time and increasing passivation time, but the PDCY window can only be expanded to more than three weeks, namely, PDCY still can be generated along with environmental fluctuation, and the problem cannot be fundamentally solved.
The method for improving the crystallization defect of the aluminum bonding pad comprises the following steps:
FIG. 4 is a flow chart of a method for improving the crystal defect of the aluminum pad according to an embodiment of the present invention; fig. 5 is a schematic diagram of a corresponding device structure in the method according to the embodiment of the present invention; the method for improving the crystal defect of the aluminum bonding pad comprises the following steps:
step one, an aluminum pad 106 is formed on the wafer.
The wafer has a top copper layer 101 formed thereon prior to forming the aluminum pads 106.
The wafer is a silicon substrate wafer.
The semiconductor device is formed in an inner area below the surface of the wafer, more than one copper layer is formed between the surface of the wafer and the top copper layer 101, an interlayer film is isolated between the copper layers including the top copper layer 101, the adjacent copper layers are connected through a through hole, and the bottom copper layer is connected with a doped area of the semiconductor device through a contact hole.
And each copper layer is formed by adopting a Damascus process.
The interlayer film is an oxide film. In fig. 5, the reference numeral 102 corresponds to the topmost interlayer film, and the topmost interlayer film 102 is grown by a Plasma Enhanced Chemical Vapor Deposition (PECVD) process, so in fig. 5, PEOX is used to indicate that the topmost interlayer film 102 is grown by a PECVD process.
The sub-steps of forming the aluminum pad 106 include:
and 11, growing a top silicon oxide film 104. The top silicon oxide film 104 is typically grown by a PECVD process, so PEOX is also used in fig. 5 to indicate that the top silicon oxide film 104 is grown by a PECVD process.
In general, step 11 further includes a step of forming a second silicon nitride layer 103 before growing the top silicon oxide film 104. In fig. 5, SiN is used to denote the material of the second silicon nitride layer 103.
And step 12, etching the top silicon oxide film 104 by adopting a photoetching and etching process to form a redistribution through hole groove.
And step 13, depositing top aluminum, wherein the top aluminum completely fills the redistribution via groove and extends to the outside of the redistribution via groove.
Typically, the step of depositing a metal barrier or adhesion layer 105 is also included prior to depositing the top aluminum layer.
And 14, performing aluminum etching, wherein the top aluminum remained in the redistribution via groove after the aluminum etching forms a top aluminum line and the aluminum pad 106.
And step two, forming a chip protection layer 108 consisting of a silicon nitride layer on the surface of the wafer on which the aluminum bonding pad 106 is formed.
Before forming the chip protection layer 108, a step of forming a second silicon oxide layer 107 is further included, and the chip protection layer 108 is formed on the surface of the second silicon oxide layer 107.
Step three, opening a forming area of the aluminum bonding pad 106 by photoetching, and removing the chip protection layer 108 on the top of the aluminum bonding pad 106 by adopting a dry etching process of etching gas including fluorine-containing gas; fluorine may remain in the surface region of the aluminum pad 106 during the dry etching process.
The dry etching process in the third step further includes an over-etching process, and the over-etching process continues to etch the surface of the aluminum pad 106 after the surface of the aluminum pad 106 is exposed. The over-etching process can remove part of fluorine on the surface of the aluminum pad 106.
And step four, carrying out wet cleaning on the wafer subjected to the dry etching process.
NE111 is adopted as cleaning liquid medicine for wet cleaning.
In the fourth step, the moisture on the aluminum pad 106 is reduced by reducing the wet cleaning time, so as to improve the crystallization defect of the aluminum pad 106.
Step five, calculating the thickness of the surface area 301 with the fluorine element remained in the aluminum pad 106 after the step four, and removing all the aluminum in the surface area 301 with the fluorine element remained in the aluminum pad 106 by adopting an ion bombardment method shown by a mark 302 so as to improve the crystal defects of the aluminum pad 106.
The ion bombardment employs an ion source comprising inert gas ions. Preferably, the ion source of the ion bombardment is Ar ions.
In the fifth step, the thickness of the surface region 301 where the fluorine element remains in the aluminum pad 106 after the fourth step is calculated by auger electron spectroscopy.
The thickness of the surface region 301 in which the fluorine element remains in the aluminum pad 106 after the fourth step is several tens of。
And step five, carrying out oxygen annealing treatment.
The technical solution of the embodiment of the present invention is designed according to the technical problem of reducing or eliminating the crystal defect on the aluminum pad 106, and after the chip protection layer 108 on the top of the aluminum pad 106 is etched by using a dry etching process and wet cleaning is performed in the prior art, the thickness of the surface region 301 where the fluorine element remains in the aluminum pad 106 is calculated, and thereafter, the surface area 301 of the aluminum pad 106 where the fluorine element remains is removed by ion bombardment, because the residual fluorine element in the aluminum bonding pad 106 caused by the dry etching process is removed, the aluminum can be prevented from being crystallized due to electrochemical operation of fluorine and water vapor in the environment, therefore, the crystal defects of the aluminum bonding pad 106 can be improved, the crystal defects on the aluminum bonding pad 106 can be reduced or eliminated, and the bonding quality of the semiconductor and the packaging quality and reliability can be improved.
The present invention has been described in detail with reference to the specific embodiments, but these should not be construed as limitations of the present invention. Many variations and modifications may be made by one of ordinary skill in the art without departing from the principles of the present invention, which should also be considered as within the scope of the present invention.
Claims (15)
1. A method for improving the crystal defect of an aluminum bonding pad is characterized by comprising the following steps:
step one, forming an aluminum bonding pad on a wafer;
secondly, forming a chip protection layer consisting of a silicon nitride layer on the surface of the wafer on which the aluminum bonding pad is formed;
step three, opening a forming area of the aluminum bonding pad by photoetching, and removing the chip protection layer on the top of the aluminum bonding pad by adopting a dry etching process of etching gas including fluorine-containing gas; fluorine remains in the surface region of the aluminum pad in the dry etching process;
step four, carrying out wet cleaning on the wafer subjected to the dry etching process;
and step five, calculating the thickness of the surface area with the fluorine element remained in the aluminum bonding pad after the step four, and removing the aluminum of the surface area with the fluorine element remained in the aluminum bonding pad by adopting an ion bombardment method so as to improve the crystal defect of the aluminum bonding pad.
2. The method for improving the crystal defect of the aluminum bonding pad as recited in claim 1, wherein: and the ion source adopted by the ion bombardment in the step five comprises inert gas ions.
3. The method for improving the crystal defect of the aluminum bonding pad as recited in claim 1, wherein: and fifthly, the ion source of the ion bombardment is Ar ions.
4. The method for improving the crystal defect of the aluminum bonding pad as recited in claim 1, wherein: NE111 is adopted as the cleaning liquid medicine for the wet cleaning in the fourth step.
5. The method for improving the crystal defect of the aluminum bonding pad as recited in claim 4, wherein: and in the fourth step, the water vapor on the aluminum bonding pad is reduced by reducing the wet cleaning time so as to improve the crystallization defect of the aluminum bonding pad.
6. The method for improving the crystal defect of the aluminum bonding pad as recited in claim 1, wherein: the dry etching process in the third step further comprises an over-etching process, and the over-etching process continuously etches the surface of the aluminum bonding pad after the surface of the aluminum bonding pad is exposed.
7. The method for improving the crystal defect of the aluminum bonding pad as recited in claim 1, wherein: in the first step, before the aluminum pad is formed, a top copper layer has been formed on the wafer, and the step of forming the aluminum pad includes:
step 11, growing a top layer silicon oxide film;
step 12, etching the top silicon oxide film by adopting a photoetching and etching process to form a redistribution through hole groove;
step 13, depositing top aluminum, wherein the top aluminum completely fills the redistribution via trench and extends to the outside of the redistribution via trench;
and 14, performing aluminum etching, wherein the top aluminum remained in the redistribution through hole groove after the aluminum etching forms a top aluminum wire and the aluminum bonding pad.
8. The method for improving the crystal defect of the aluminum bonding pad as recited in claim 7, wherein: the semiconductor device is formed in an inner area below the surface of the wafer, more than one copper layer is formed between the surface of the wafer and the top copper layer, interlayer films are isolated among the copper layers including the top copper layer, the adjacent copper layers are connected through holes, and the bottom copper layer is connected with the doped area of the semiconductor device through contact holes.
9. The method for improving the crystal defect of the aluminum bonding pad as recited in claim 8, wherein: and each copper layer is formed by adopting a Damascus process.
10. The method for improving the crystal defect of the aluminum bonding pad as recited in claim 8, wherein: the interlayer film is an oxide film.
11. The method for improving the crystal defect of the aluminum bonding pad as recited in claim 7, wherein: in step 13, before depositing the top aluminum layer, a step of depositing a metal barrier layer or an adhesion layer is further included.
12. The method for improving the crystal defect of the aluminum bonding pad as recited in claim 7, wherein: step 11 further includes a step of forming a second silicon nitride layer before growing the top silicon oxide film.
13. The method for improving the crystal defect of the aluminum bonding pad as recited in claim 1, wherein: the wafer is a silicon substrate wafer.
14. The method for improving the crystal defect of the aluminum bonding pad as recited in claim 1, wherein: and step five, calculating the thickness of the surface region of the aluminum bonding pad with the residual fluorine element after the step four by using an Auger electron spectroscopy analysis method.
15. The method of ameliorating crystal defects in an aluminum pad of claim 14 wherein: after the fourth step, the thickness of the surface area of the aluminum bonding pad where the fluorine element remains is tens of。
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| CN112185820A (en) * | 2020-09-14 | 2021-01-05 | 华虹半导体(无锡)有限公司 | Method for preventing crystal defect of bonding pad of integrated circuit device |
| CN112635345A (en) * | 2020-12-08 | 2021-04-09 | 华虹半导体(无锡)有限公司 | Wafer detection device and method of single-chip process chamber |
| CN112951863A (en) * | 2021-03-30 | 2021-06-11 | 上海华力微电子有限公司 | Method for manufacturing image sensor |
| CN114535219A (en) * | 2022-01-19 | 2022-05-27 | 昆山丘钛微电子科技股份有限公司 | Anti-corrosion method and system for welding part of camera module |
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| CN112185820B (en) * | 2020-09-14 | 2022-10-28 | 华虹半导体(无锡)有限公司 | Method for preventing crystal defect of bonding pad of integrated circuit device |
| CN112635345A (en) * | 2020-12-08 | 2021-04-09 | 华虹半导体(无锡)有限公司 | Wafer detection device and method of single-chip process chamber |
| CN112635345B (en) * | 2020-12-08 | 2022-09-20 | 华虹半导体(无锡)有限公司 | Wafer detection device and method of single-chip process chamber |
| CN112951863A (en) * | 2021-03-30 | 2021-06-11 | 上海华力微电子有限公司 | Method for manufacturing image sensor |
| CN114535219A (en) * | 2022-01-19 | 2022-05-27 | 昆山丘钛微电子科技股份有限公司 | Anti-corrosion method and system for welding part of camera module |
| CN114535219B (en) * | 2022-01-19 | 2024-04-05 | 昆山丘钛微电子科技股份有限公司 | Corrosion prevention method and system for welding part of camera module |
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